Abstract: A cooling plate according to the present invention contains 42% to 65% by mass of TiSi2, 4% to 16% by mass of TiC, and a smaller amount of SiC than the mass percentage of TiSi2.

Abstract: A method of manufacturing a wafer mounting table according to an embodiment includes: (a) a step of loading a ceramic slurry containing a ceramic powder and a gelling agent into opening portions of a metal mesh, inducing a chemical reaction of the gelling agent to gelate the ceramic slurry, and then performing degreasing and calcining to prepare a ceramic-loaded mesh; (b) a step of sandwiching the ceramic-loaded mesh between a first ceramic calcined body and a second ceramic calcined body obtained by calcining after mold cast forming so as to prepare a multilayer body; and (c) a step of hot press firing the multilayer body to prepare the wafer-receiving table.

Abstract: A wafer placement table includes a conductor unit. In the wafer placement table, a sub-RF electrode (first conductive layer) and a jumper layer (second conductive layer) are embedded at different levels in a ceramic substrate having a wafer placement surface, and the conductor unit establishes electrical continuity between the sub-RF electrode and the jumper layer. The conductor unit is a transversely placed coil or a transversely placed perforated cylindrical body.

Abstract: An AlN ceramic substrate of the present invention contains yttrium aluminate, and has a volume resistivity of 3×109 ?cm or more at 550° C.

Abstract: An AlN joined body includes a first AlN member and a second AlN member that are joined together. The content of yttria in the first AlN member is equal to or below the detection limit. The second AlN member contains yttria.

Abstract: A heater for a semiconductor manufacturing apparatus, the heater includes an AlN ceramic substrate and a heating element embedded inside the AlN ceramic substrate. The AlN ceramic substrate contains O, C, Ti, Ca, and Y as impurity elements, includes an yttrium aluminate phase as a crystal phase, and has a Ti/Ca mass ratio of 0.13 or more, and a TiN phase is not detected in an XRD profile measured with Cu K-? radiation.

Abstract: A wafer mounting table includes a first electrode and a second electrode buried inside of a ceramic substrate having a wafer mounting surface so as to be parallel to the wafer mounting surface with the first electrode closer to the wafer mounting surface than the second electrode. The wafer mounting table includes a conductive section that electrically conducts the first electrode and the second electrode. The conductive section is such that a plurality of circular members comprised of plate-shaped metal meshes parallel to the wafer mounting surface are stacked between the first electrode and the second electrode.

Abstract: A heater for a semiconductor manufacturing apparatus, the heater includes an AlN ceramic substrate and a heating element embedded inside the AlN ceramic substrate. The AlN ceramic substrate contains O, C, Ti, Ca, and Y as impurity elements, includes an yttrium aluminate phase as a crystal phase, and has a Ti/Ca mass ratio of 0.13 or more, and a TiN phase is not detected in an XRD profile measured with Cu K-? radiation.

Abstract: A ceramic heater includes: a ceramic plate which is provided with a wafer placement surface on an upper surface and in which a heating resistor is internally embedded; a ceramic tubular shaft with an upper end bonded to a lower surface of the plate; and power feeding members which penetrate a peripheral wall part of the tubular shaft in a vertical direction, and are electrically connected to the heating resistor. The power feeding members are embedded in the peripheral wall part of the tubular shaft, and are in tight contact with a ceramic material of the tubular shaft.

Abstract: A ceramic heater includes a ceramic plate. An outer-peripheral-side resistance heating element is disposed in an outer peripheral zone of the ceramic plate. A wire line extends from each of a pair of terminals disposed in a central portion of the ceramic plate toward the outer peripheral zone, and a portion of the wire line close to the outer peripheral zone is a linear portion. A connection terminal is a conductive member connecting between the wire line and the outer-peripheral-side resistance heating element, and includes a first hole into which the linear portion of the wire line is inserted and a second hole into which an end portion of the outer-peripheral-side resistance heating element is inserted.

Abstract: A method of manufacturing a wafer mounting table according to an embodiment includes: (a) a step of loading a ceramic slurry containing a ceramic powder and a gelling agent into opening portions of a metal mesh, inducing a chemical reaction of the gelling agent to gelate the ceramic slurry, and then performing degreasing and calcining to prepare a ceramic-loaded mesh; (b) a step of sandwiching the ceramic-loaded mesh between a first ceramic calcined body and a second ceramic calcined body obtained by calcining after mold cast forming so as to prepare a multilayer body; and (c) a step of hot press firing the multilayer body to prepare the wafer-receiving table.

Abstract: A member for a semiconductor manufacturing apparatus includes a ceramic disc incorporating an electrode and a ceramic cylindrical shaft supporting the disc. The disc and the shaft are integrally formed and mutually have no bonding interface. The disc has a surface with which the shaft is integrated. The surface has a region inside the shaft and a region outside the shaft. The region inside the shaft is recessed by one step with respect to the region outside the shaft and has an electrode exposure hole through which the electrode is exposed.

Abstract: A semiconductor manufacturing device member according to the present invention includes a ceramic disc with an internal electrode and a ceramic shaft that supports the disc. The disc and the shaft are integrated without having a bonding interface.

Abstract: A wafer mounting table includes a first electrode and a second electrode buried inside of a ceramic substrate having a wafer mounting surface so as to be parallel to the wafer mounting surface with the first electrode closer to the wafer mounting surface than the second electrode. The wafer mounting table includes a conductive section that electrically conducts the first electrode and the second electrode. The conductive section is such that a plurality of circular members comprised of plate-shaped metal meshes parallel to the wafer mounting surface are stacked between the first electrode and the second electrode.

Abstract: A heater for a semiconductor manufacturing apparatus, the heater includes an AlN ceramic substrate and a heating element embedded inside the AlN ceramic substrate. The AlN ceramic substrate contains O, C, Ti, Ca, and Y as impurity elements, includes an yttrium aluminate phase as a crystal phase, and has a Ti/Ca mass ratio of 0.13 or more, and a TiN phase is not detected in an XRD profile measured with Cu K-? radiation.

Abstract: A heater for a semiconductor manufacturing apparatus, the heater includes an AlN ceramic substrate and a heating element embedded inside the AlN ceramic substrate. The AlN ceramic substrate contains O, C, Ti, Ca, and Y as impurity elements, includes an yttrium aluminate phase as a crystal phase, and has a Ti/Ca mass ratio of 0.13 or more, and a TiN phase is not detected in an XRD profile measured with Cu K-? radiation.

Abstract: A heater for a semiconductor manufacturing apparatus, the heater includes an AlN ceramic substrate and a heating element embedded inside the AlN ceramic substrate. The AlN ceramic substrate contains O, C, Ti, Ca, and Y as impurity elements, includes an yttrium aluminate phase as a crystal phase, and has a Ti/Ca mass ratio of 0.13 or more, and a TiN phase is not detected in an XRD profile measured with Cu K-? radiation.

Abstract: In a step (a), a ceramic substrate, a brazing material including a metal having a large thermal expansion coefficient, a porous body having a smaller thermal expansion coefficient than the brazing material, and a feeding terminal are placed on a joint surface in such a way that a joint surface of the feeding terminal faces a joint surface of the ceramic substrate. In a step (b), the brazing material is fused to allow the brazing material to penetrate into the pores of the porous body. In this manner, a joint layer containing the brazing material and the porous body is formed, and the joint surface of the ceramic substrate and the joint surface of the feeding terminal are joined to each other through the joint layer.

Abstract: The electrostatic chuck includes a discoidal alumina ceramic substrate and a heater electrode and an electrostatic electrode embedded in the alumina ceramic substrate. The top surface of the alumina ceramic substrate is a wafer-mounting face. The heater electrode has a pattern, for example, of a single continuous line so as to realize electric wiring over the entire surface of the alumina ceramic substrate. Upon the application of a voltage, the heater electrode generates heat and heats the wafer W. The heater electrode is made of a complex oxide of titanium, aluminum, and magnesium (Ti—Al—Mg—O) dispersed in molybdenum.

Abstract: In a step (a), a guard ring is disposed on a ceramic substrate (a second member) such that one of openings of a through hole of the guard ring is covered with a joint surface of the ceramic substrate. In a step (b), a brazing material made of a metal, a powder made of a material having a smaller thermal expansion coefficient than the brazing material, and a feeding terminal are inserted into the through hole. In a step (c), the brazing material is fused to impregnate the powder with the brazing material to thereby form a joint layer including the brazing material and the powder. In this manner, the joint surface and the joint surface are joined to each other through the joint layer.