Abstract: A manufacturing method for a sintered body having a metallic member buried therein is provided, and includes forming an alumina sintered body, forming a metallic member by printing a printing paste including a refractory metal on the alumina sintered body, forming a green alumina compact on the metallic member, and sintering the alumina compact, the metallic member, and the alumina sintered body or the alumina presintered body.

Abstract: At least two switching devices each including a substrate formed of a wide bandgap semiconductor, source and gate electrodes formed in a principal surface side of the substrate, and a drain electrode formed on the back surface of the substrate are stacked so that respective upper surface sides of the switching face each other.

Abstract: An alumina sintered body comprises an alumina substrate having a first main surface and a second main surface opposing each other, an embedded film electrode made of a metal and embedded in the alumina substrate at a depth HD of 0.4 mm or less from a first main surface SF1, and an embedded terminal formed of a metal, embedded in the alumina substrate nearer a second main surface SF2 side than the embedded electrode. The embedded terminal is in contact with the embedded electrode and a film thickness HE of the embedded electrode is 25 ?m or less.

Abstract: An electrostatic chuck with a heater including: a base which is composed of a sintered body containing alumina; an electrode disposed in an upper part of the base: and a resistance heating element embedded in a lower part of the base. The base includes a dielectric layer between the electrode and an upper surface of the base and a supporting member between the electrode and a lower surface of the base. The dielectric layer has a carbon content of not more than 100 ppm, and the supporting member has a carbon content of 0.03 to 0.25 wt %. Moreover, the resistance heating element is formed into a coil and mainly composed of niobium.

Abstract: A method for producing sintered silicon nitride, including preparing a slurry from a base powder containing a silicon nitride powder and a sintering aid, the base powder having a particle size (D50) of 0.3 to 1 ?m; obtaining an SD powder from the slurry by a spray dryer process; and feeding the SD powder into a forming die and firing the powder under a compaction pressure of 3 ton/cm2 or more thereby obtaining sintered silicon nitride. The present invention provides a method for producing sintered silicon nitride with a higher degree of safety of the working environment.

Abstract: An electrostatic chuck comprises a dielectric ceramic layer made of an alumina sintered body having a volume resistivity equal to or greater than about 1×1017?·cm at room temperature and a volume resistivity equal to or greater than about 1×1014?·cm at 300° C., and an electrode formed on one surface of the dielectric ceramic layer.

Abstract: An electrostatic chuck includes an ESC electrode E1 that is disc-shaped in plan view, an ESC electrode E2 that is doughnut-shaped in plan view, and a dielectric layer formed to cover surfaces of the ESC electrodes E1 and E2. The dielectric layer includes a disc-shaped dielectric region R1 formed in an area corresponding to the surface of the ESC electrode E1, and a doughnut-shaped dielectric region R2 formed in an area corresponding to the surface of the ESC electrode E2, and these two dielectric regions R1 and R2 are sintered seamlessly into an integrated form. The dielectric regions R1 and R2 are formed using different materials having different volume resistivities with the same kind of sintering additives. To each of the ESC electrodes E1 and E2, a terminal for voltage application is connected so that voltage can be applied individually to the ESC electrodes E1 and E2.

Abstract: An electrostatic chuck includes a base. The base has a support portion made of alumina ceramics, and a surface portion made of yttria ceramics. The surface portion forms at least a substrate mounting surface and side surface of the base on a surface of the support portion. Carbon contents in alumina ceramics of the support portion and yttria ceramics of the surface portion are 0.05 wt % or less.

Abstract: A pair of conductive rubber electrodes including measurement surfaces opposite to a surface of a dielectric layer of an electrostatic chuck as an objective of measurement, in which the measurement surfaces are arranged at an interval individually on the same plane, are provided. A direct-current power supply and an ammeter are connected to the pair of conductive rubber electrodes. The conductive rubber electrodes have resistance values equal to each other, and have a shape in which the measurement surfaces have areas equal to each other, in which volume resistivities are 1×105 ?·cm or less, and hardness is within a range of 60 to 80 Hs in JIS-A hardness. An interval between the conductive rubber electrodes is six times or more a thickness of the dielectric layer of the electrostatic chuck as the objective of the measurement.

Abstract: A binder is mixed to alumina powder with a purity of 99.5% or more (step S11), the mixture is granulated (step S12), resultant granule powder is formed with a die (step S13), and a formed compact is sintered in a hot-pressing manner (step S14).

Abstract: A semiconductor module is formed by alternately stacking resin boards 3 on which semiconductor chips 2 are mounted and sheet members having openings larger than the semiconductor chips 2 and bonded to the resin boards 3. The resin board 4 located at the bottom out of the resin boards 3 is thicker than the other resin boards 3.

Abstract: An electrostatic chuck with a heater includes: a base formed of a sintered body containing alumina; an ESC electrode provided in an upper portion side in the base; and a resistance heating body embedded in a lower portion side in the base. The base is composed of a dielectric layer from the ESC electrode to an upper surface of the base, and of a support member from the ESC electrode to a lower surface of the base. In the support member, a carbon content differs between an ESC electrode neighborhood in contact with the dielectric layer and a lower region below the ESC electrode neighborhood, a carbon content in the dielectric layer is 100 wt ppm or less, the carbon content in the ESC electrode neighborhood is 0.13 wt % or less, the carbon content in the lower region is 0.03 wt % or more but 0.5 wt % or less, and the carbon content in the ESC electrode neighborhood is smaller than the carbon content in the lower region. The resistance heating body contains niobium or platinum.

Abstract: A method of manufacturing an electrical-resistance heating element includes forming sintered ceramics or calcined ceramics, forming an electrode on the sintered ceramics or the calcined ceramics, and forming a ceramic base material having mainly a high melting point metal on the electrode embedded therein, thereby forming a heating element with built-in electrode.

Abstract: An electrostatic chuck includes: a base body formed of an aluminum nitride sintered body containing samarium; and an electrode embedded in the base body and containing molybdenum, wherein a portion of the base body from the electrode to a base body surface is formed into a dielectric layer, and the base body surface is formed into a substrate mounting surface on which a processing target is sucked and mounted, and a content of samarium-aluminum oxide phases in the base body in a vicinity of the electrode is set at 2.5% or less in terms of an area ratio.

Abstract: An alumina sintered body comprises an alumina substrate having a first main surface and a second main surface opposing each other, an embedded film electrode made of a metal and embedded in the alumina substrate at a depth HD of 0.4 mm or less from a first main surface SF1, and an embedded terminal formed of a metal, embedded in the alumina substrate nearer a second main surface SF2 side than the embedded electrode. The embedded terminal is in contact with the embedded electrode and a film thickness HE of the embedded electrode is 25 ?m or less.

Abstract: An electronic circuit device comprises: a semiconductor element having a first surface and a second surface, with the first and second surfaces being on first and second sides of the semiconductor element, respectively, and facing in opposite directions; a first electrode on the first surface; a second electrode on the second surface; a first circuit board electrically connected to the first electrode via a metallic plate such that the metallic plate and the semiconductor element are on the first circuit board; a second circuit board on the second side of the semiconductor element, the second circuit board having a control circuit for the semiconductor element; and a metallic wire for directly electrically interconnecting the second electrode and the second circuit board.

Abstract: A ceramic heater is provided including a ceramic sintered body and a heat resistor embedded in the substrate, wherein a change in the temperature uniformity on the heating face is reduced. The heat resistor contains a metal comprising one or more metal elements selected from the group consisting of Group IVa, Group Va and Group VIa elements of the Periodic Table and a carbide of the metal. A ratio (Ic/Im) of a total strength (Ic) of main peak of the metal carbide to a total strength (Im) of main peak strength of the metal is not larger than 0.2. Alternatively, the ratio (Rb?Ra)/Ra is not larger than 30 percent, where “Ra” is the resistance of the heat resistor before sintering and “Rb” is the resistance of the heat resistor after sintering.

Abstract: A semiconductor module is formed by alternately stacking resin boards and sheet members. Each of the resin boards includes first buried conductors. A semiconductor chip is mounted on the upper face of each of the resin boards. Each of the sheet members having an opening for accommodating the semiconductor chip and including second buried conductors electrically connected to the first buried conductors. A first resin board located at the bottom is thicker than second resin boards. Each of the sheet members includes an adhesive member covering the upper and side faces of the semiconductor chip.

Abstract: An electrostatic chuck includes, a base plate made of ceramic, an electrode for generating an electrostatic clamping force, and a dielectric material layer formed on the electrode and made of ceramic having a volume resistivity of not less than 1×1015 ?·cm at 100° C. and the same main constituent as the base plate. The base plate has a higher thermal conductivity than the dielectric material layer.

Abstract: A binder is mixed to alumina powder with a purity of 99.5% or more (step S11), the mixture is granulated (step S12), resultant granule powder is formed with a die (step S13), and a formed compact is sintered in a hot-pressing manner (step S14).