Abstract: A composite intermediary device using vertical probe for wafer testing, comprising: a printed circuit board, a glass interposer and a vertical probe set; wherein the printed circuit board has printed circuit connected with a measuring apparatus, the glass interposer has multiple contact pads connected with the printed circuit, and then the probes of the vertical probe set are against the contact pads of the glass interposer and the bumps of the device under test. By a fine pitch configuration of the printed circuit and the contact pads of the glass interposer, the present invention achieves the requirements of synchronous and interleaved testing of multiple ICs.

Abstract: A transient voltage suppression device includes at least one P-type lightly-doped structure and at least one electrostatic discharge structure. The electrostatic discharge structure includes an N-type lightly-doped well, an N-type well, a first P-type heavily-doped area, and a first N-type heavily-doped area. The N-type lightly-doped well is formed in the P-type lightly-doped structure. The N-type well is formed in the N-type lightly-doped well. The doping concentration of the N-type lightly-doped well is less than that of the N-type well. The first P-type heavily-doped area is formed in the N-type well. The first N-type heavily-doped area is formed in the P-type lightly-doped structure.

Abstract: A method for processing an integrated circuit includes forming first and second gate all around transistors. The method forms a dipole oxide in the first gate all around transistor without forming the dipole oxide in the second gate all around transistor. This is accomplished by entirely removing an interfacial dielectric layer and a dipole-inducing layer from semiconductor nanosheets of the second gate all around transistor before redepositing the interfacial dielectric layer on the semiconductor nanosheets of the second gate all around transistor.

Abstract: A launch pad system includes a fuel vent port provided in a launch vehicle, a launch pad fuel tank provided outside the launch vehicle to store fuel, a fuel recovery line connecting the fuel vent port and the launch pad fuel tank such that the fuel is transferred therethrough, and a fuel transfer unit provided on the fuel recovery line to transfer the fuel, wherein the fuel may be recovered from the launch vehicle to the launch pad fuel tank.

Abstract: A two-stage machine learning model is used to for categorization of a dataset, such as transactions. A plurality of complementary base machine learning models are used to generate initial inference results and associated measures of inference confidence from the dataset, which are collected as a meta dataset. Each of the complementary models is associated with a different part of the dataset in which it has a higher accuracy in that part than the other models. The meta dataset is provided as input to a meta machine learning model, which is trained to produce a final inference result, and a confidence score model, which is trained to produce a confidence score associated with the final inference result.

Abstract: An example operation may include one or more of generating a three-dimensional (3D) model of an object via execution of a machine learning model on one or more images of the object, capturing a plurality of snapshots of the 3D model of the object at different angles to generate a plurality of snapshot images of the object, fusing a feature into each of the plurality of snapshots to generate a plurality of fused snapshots of the 3D model of the object, and storing the plurality of fused snapshots of the 3D model of the object in memory.

Abstract: A computerized simulation validating method for a full-scale distribution network single phase-to-ground fault test is implemented by simulating a full-scale test system with external quantities being controlled to be conformant and validating the full-scale distribution network single phase-to-ground fault test based on a conformance check result between the internal quantities of the field testing and the internal quantities of the simulation testing. The simulation validating method for a full-scale distribution network single phase-to-ground fault test improves normalization and conformance of the full-scale distribution network ground fault test. The computerized simulation validating system, apparatus, and medium for a full-scale distribution network single phase-to-ground fault test also achieve the benefits noted above.

Abstract: A method includes removing a first dummy gate structure to form a recess around a first nanostructure and a second nanostructure; depositing a sacrificial layer in the recess with a flowable chemical vapor deposition (CVD); and patterning the sacrificial layer to leave a portion of the sacrificial layer between the first nanostructure and the second nanostructure. The method further include depositing a first work function metal in first recess; removing the first work function metal and the portion of the sacrificial layer from the recess; depositing a second work function metal in the recess, wherein the second work function metal is of an opposite type than the first work function metal; and depositing a fill metal over the second work function metal in the recess.

Abstract: A semiconductor device structure is provided. The device includes one or more first semiconductor layers, each first semiconductor layer of the one or more first semiconductor layers is surrounded by a first intermixed layer, wherein the first intermixed layer comprises a first material and a second material.

Abstract: A semiconductor device structure, along with methods of forming such, are described. The semiconductor device structure includes a first dielectric feature extending along a first direction, the first dielectric feature comprising a first dielectric layer having a first sidewall and a second sidewall opposing the first sidewall, a first semiconductor layer disposed adjacent the first sidewall, the first semiconductor layer extending along a second direction perpendicular to the first direction, a second dielectric feature extending along the first direction, the second dielectric feature disposed adjacent the first semiconductor layer, and a first gate electrode layer surrounding at least three surfaces of the first semiconductor layer, and a portion of the first gate electrode layer is exposed to a first air gap.

Abstract: A resonant flyback power converter includes: a first and a second transistors which form a half-bridge circuit for switching a transformer and a resonant capacitor to generate an output voltage; a current-sense device for sensing a switching current of the half-bridge circuit to generate a current-sense signal; and a switching control circuit generating a first and a second driving signals for controlling the first and the second transistors. The turn-on of the first driving signal controls the half-bridge circuit to generate a positive current to magnetize the transformer and charge the resonant capacitor. The turn-on of the second driving signal controls the half-bridge circuit to generate a negative current to discharge the resonant capacitor. The switching control circuit turns off the first transistor when the positive current exceeds a positive-over-current threshold, and/or, turns off the second transistor when the negative current exceeds a negative-over-current threshold.

Abstract: Positive reference spiked in collected sample for use in qualitatively and quantitatively detecting viral RNA.

Abstract: Provided are a data processing system and method based on dynamic redundancy heterogeneous encoding, and a device. The method comprises: respectively performing error correction encoding on information to be processed and a processing rule, so as to form encoded information to be processed and an encoded processing rule; processing, by using the encoded processing rule, the encoded information to be processed, so as to obtain response data; and then performing error correction decoding on N pieces of response data, so as to obtain processing result information of the information to be processed.

Abstract: A battery cell includes a first electrode assembly, a second electrode assembly and a housing. In a thickness direction of the battery cell, the first electrode assembly includes a first surface and a second surface opposite to the first surface, the second electrode assembly includes a third surface and a fourth surface opposite to the third surface. A housing includes an accommodation cavity configured to accommodate the first electrode assembly and the second electrode assembly, the accommodation cavity includes a bottom wall, and the first surface and the third surface are both opposite to the bottom wall. The battery cell further includes: a first adhesive layer, including a first bonding side and a second bonding side. The first bonding side is bonded to both the second surface and the fourth surface, and the second bonding side is bonded to the housing.

Abstract: A switching converter circuit for switching one end of an inductor therein between plural voltages according to a pulse width modulation (PWM) signal to convert an input voltage to an output voltage. The switching converter circuit has a driver circuit including a high side driver, a low side driver, a high side sensor circuit, and a low side sensor circuit. The high side sensor circuit is configured to sense a gate-source voltage of a high side metal oxide semiconductor field effect transistor (MOSFET), to generate a low side enable signal for enabling the low side driver to switch a low side MOSFET according to the PWM signal. The low side sensor circuit is configured to sense a gate-source voltage of a low side MOSFET, to generate a high side enable signal for enabling the high side driver to switch a high side MOSFET according to the PWM signal.

Abstract: Semiconductor structures and methods for forming the same are provided. The semiconductor structure includes a plurality of first nanostructures formed over a substrate, and a dielectric wall adjacent to the first nanostructures. The semiconductor structure also includes a first liner layer between the first nanostructures and the dielectric wall, and the first liner layer is in direct contact with the dielectric wall. The semiconductor structure also includes a gate structure surrounding the first nanostructures, and the first liner layer is in direct contact with a portion of the gate structure.

Abstract: The invention relates to a combined dual-wavelength laser light processing device, having two laser light source and a Bessel beam lens, so as to form a Bessel beam with long focal length; Using the coaxial reflecting mirror to achieve deflecting and penetrating to form two coaxial finished light beams; a diffraction optical unit for adjusting the energy distribution of the finished light beam; a work platform; a laser galvanometric scanning module to achieve guiding the finished light beam; a controller electrically connected to the two laser light sources, and controls the projection timing and energy of the first and the second wavelength beams to form at least one rectangular pulse and at least one burst pulse, through the repeated conversion of the dual wavelengths in the composite light wave configuration make the processing of the composite material to be fast and precise.

Abstract: A semiconductor device according to the present disclosure includes a source feature and a drain feature, a plurality of semiconductor nanostructures extending between the source feature and the drain feature, a gate structure wrapping around each of the plurality of semiconductor nanostructures, a bottom dielectric layer over the gate structure and the drain feature, a backside power rail disposed over the bottom dielectric layer, and a backside source contact disposed between the source feature and the backside power rail. The backside source contact extends through the bottom dielectric layer.

Abstract: An example apparatus for detecting objects in video frames includes a receiver to receive a plurality of video frames from a video camera. The apparatus also includes a first still image object detector to receive a first frame of the plurality of video frames and calculate localization information and confidence information for each potential object patch in the first frame. The apparatus further includes a second still image object detector to receive an adjacent frame of the plurality of video frames adjacent to the first frame and calculate localization information and confidence information for each potential object patch in the adjacent frame. The apparatus includes a similarity detector trained to detect paired patches between the first frame and the adjacent frame based on a comparison of the detected potential object patches.