Abstract: A method for thinning a semiconductor wafer (201) to less than about 100 &mgr; thickness (208). The wafer has two flat surfaces (206, 207) of a first diameter and a rounded periphery (204a) between the flat surfaces. A generally circular support tape (202) for the wafer is selected having a second diameter. The second diameter is selected to be greater than the first diameter by an amount about twice the length (204a) of the peripheral wafer rounding, as obtained after the thinning step is completed and measured along a radial line. Flat wafer surface 206 is placed on the tape and the wafer is thinned to the intended thickness less than about 100 &mgr;. Specifically, the length (204b) along a radial line may be about 1 mm, making the second diameter about 2 mm larger than the first diameter. Furthermore, the wafer thickness (208) after thinning may specifically be between 10 and 30 &mgr;.

Abstract: In semiconductor device 10 under this invention, bonding pads 20 are lined up in a staggered pattern on the main surface of semiconductor chip 14 which is mounted on insulated substrate 12. Multiple stud bumps are stacked on top of the pads 20a which are located on the inner rows, and these stud bumps comprise stud bump stack 28. Conductive wire 22 connects the lands 18 on the insulated substrate with the corresponding bonding pads 20. The wire is formed with its beginning at the land and its end at the bonding pad. Via the stud bump stacks 28, the ends of conductive wire 22a on the inner pads are in a higher position than the ends of conductive wires 22b on the outer pads, so that the problem of neighboring conductive wires coming into contact does not occur.

Abstract: A semiconductor package production method containing a step in which a bond layer made of a single-layer film thermoset bond is provided on the back of a wafer on which many semiconductor devices are formed, a dicing tape is pasted onto its bond layer side, and the bond layer and the wafer are diced simultaneously in order to obtain semiconductor devices with the bond layer, and a step in which the semiconductor devices with the bond layer are detached from the dicing tape and die-attached to interposing substrates serving as bodies to which they are bonded; wherein, the aforementioned film thermoset bond contains an epoxy resin, an epoxy resin hardener, and a phenoxy resin as well as 50-80 wt % of spherical silica, and the bond layer is 100 &mgr;m or thicker. A semiconductor device made by this method and a wafer for use with this method.

Abstract: A type of semiconductor device and its manufacturing method, which can further miniaturize semiconductor devices and reduce design restrictions by minimizing the fillet around the semiconductor chip. The semiconductor package is constituted by fixing semiconductor chip 100 on insulating substrate 102 via die paste 104. Semiconductor chip 100 has top surface 112, where an electronic circuit is formed, and a bottom surface 114 adhered to insulating substrate 102. The bottom surface 114 is formed smaller than top surface 112. By forming bottom surface 114 smaller than top surface 112, the amount of the fillet spread out around semiconductor chip 100 can be reduced.

Abstract: A semiconductor device comprising a semiconductor chip having an active and a passive surface; the active surface includes an integrated circuit and input/output pads suitable for metallurgical contacts. Further, the device has a protective plastic film (polyimide, epoxy resin, or silicone) of controlled and uniform thickness (20 to 60 &mgr;m) selectively attached to the passive surface. The film is suitable to absorb light of visible and ultraviolet wavelengths, to remain insensitive to moisture absorption, and to exert thermomechanical stress on the chip such that this stress at least partially neutralizes the stress exerted by an outside part after chip assembly.

Abstract: A semiconductor package production method containing a step in which a bond layer made of a single-layer film thermoset bond is provided on the back of a wafer on which many semiconductor devices are formed, a dicing tape is pasted onto its bond layer side, and the bond layer and the wafer are diced simultaneously in order to obtain semiconductor devices with the bond layer, and a step in which the semiconductor devices with the bond layer are detached from the dicing tape and die-attached to interposing substrates serving as bodies to which they are bonded; wherein, the aforementioned film thermoset bond contains an epoxy resin, an epoxy resin hardener, and a phenoxy resin as well as 50-80 wt % of spherical silica, and the bond layer is 100 &mgr;m or thicker. A semiconductor device made by this method and a wafer for use with this method.

Abstract: An insulating layer (3) having an opening portion (3a) at a position conformable to an electrode pad (2) is formed. Next, a resin projection portion (4) is formed on the insulating layer (3). Thereafter, a resist film is formed which has opening portions made in regions conformable to the opening portion (3a), the resin projection portion (4) and the region sandwiched therebetween. A Cu plating layer (6) is formed by electrolytic copper plating, using the resist film as a mask.

Abstract: In semiconductor device 10 under this invention, bonding pads 20 are lined up in a staggered pattern on the main surface of semiconductor chip 14 which is mounted on isolated substrate 12. Multiple stud bumps are stacked on top of the pads 20a which are located on the inner rows, and these stud bumps comprise stud bump stack 28. Conductive wire 22 connects the lands 18 on the isolated substrate with the corresponding bonding pads 20. The wire is formed with its beginning at the land and its end at the bonding pad. Via the stud bump stacks 28, the ends of conductive wire 22a on the inner pads are in a higher position than the ends of conductive wires 22b on the outer pads, so that the problem of neighboring conductive wires coming into contact does not occur.

Abstract: Improve the productivity and cost for the manufacturing of a semiconductor device referred to as a wafer level CSP. The manufacturing method for a semiconductor device related to this invention contains each of the processes that form a wiring (18) for the purpose of electrically connecting each electrode pad (10a) and external connecting terminals on top of a wafer (10) on which semiconductor elements are formed, connect conductive balls that are preformed by a separate process on top of this, and next, cover the above-mentioned wafer with a resin (32) such that the upper portion of the conductive supporting posts (30) are exposed. In a later process, solder balls (34) are arranged as external connecting terminals on the upper portion of the conductive supporting posts, and in the final process, semiconductor elements are formed by dicing the above-mentioned wafer along the boundary lines of the above-mentioned semiconductor elements.

Abstract: A semiconductor package production method containing a step in which a bond layer made of a single-layer film thermoset bond is provided on the back of a wafer on which many semiconductor devices are formed, a dicing tape is pasted onto its bond layer side, and the bond layer and the wafer are diced simultaneously in order to obtain semiconductor devices with the bond layer, and a step in which the semiconductor devices with the bond layer are detached from the dicing tape and die-attached to interposing substrates serving as bodies to which they are bonded; wherein, the aforementioned film thermoset bond contains an epoxy resin, an epoxy resin hardener, and a phenoxy resin as well as 50-80 wt % of spherical silica, and the bond layer is 100 &mgr;m or thicker. A semiconductor device made by this method and a wafer for use with this method.

Abstract: In semiconductor device 10 under this invention, bonding pads 20 are lined up in a staggered pattern on the main surface of semiconductor chip 14 which is mounted on insulated substrate 12. Multiple stud bumps are stacked on top of the pads 20a which are located on the inner rows, and these stud bumps comprise stud bump stack 28. Conductive wire 22 connects the lands 18 on the insulated substrate with the corresponding bonding pads 20. The wire is formed with its beginning at the land and its end at the bonding pad. Via the stud bump stacks 28, the ends of conductive wire 22a on the inner pads are in a higher position than the ends of conductive wires 22b on the outer pads, so that the problem of neighboring conductive wires coming into contact does not occur.

Abstract: Improve the productivity and cost for the manufacturing of a semiconductor device referred to as a wafer level CSP. The manufacturing method for a semiconductor device related to this invention contains each of the processes that form a wiring (18) for the purpose of electrically connecting each electrode pad (10a) and external connecting terminals on top of a wafer (10) on which semiconductor elements are formed, connect conductive balls that are preformed by a separate process on top of this, and next, cover the above-mentioned wafer with a resin (32) such that the upper portion of the conductive supporting posts (30) are exposed. In a later process, solder balls (34) are arranged as external connecting terminals on the upper portion of the conductive supporting posts, and in the final process, semiconductor elements are formed by dicing the above-mentioned wafer along the boundary lines of the above-mentioned semiconductor elements.

Abstract: A semiconductor device comprising a semiconductor chip having an active and a passive surface; the active surface includes an integrated circuit and input/output pads suitable for metallurgical contacts. Further, the device has a protective plastic film (polyimide, epoxy resin, or silicone) of controlled and uniform thickness (20 to 60 &mgr;m) selectively attached to the passive surface. The film is suitable to absorb light of visible and ultraviolet wavelengths, to remain insensitive to moisture absorption, and to exert thermomechanical stress on the chip such that this stress at least partially neutralizes the stress exerted-by an outside-part after chip assembly.

Abstract: A semiconductor device and its manufacturing method with which the connection reliability can be improved without complicating the manufacturing process. Semiconductor chip 102 is mounted on the principal surface of insulated substrate 104, and a conductive paste containing a heat-curing epoxy resin is supplied to via holes 116 from the back of insulated substrate 104. Then, solder balls 118 are transferred onto the conductive paste of insulated substrate 104, and reflow soldering is applied in order to bond solder balls 118 to insulated substrate 104. During the reflow soldering, the heat-curing epoxy resin forms resin parts 120 around solder balls 118.

Abstract: A type of semiconductor device and its manufacturing method, which can further miniaturize semiconductor devices and reduce design restrictions by minimizing the fillet around the semiconductor chip. The semiconductor package is constituted by fixing semiconductor chip 100 on insulating substrate 102 via die paste 104. Semiconductor chip 100 has top surface 112, where an electronic circuit is formed, and a bottom surface 114 adhered to insulating substrate 102. The bottom surface 114 is formed smaller than top surface 112. By forming bottom surface 114 smaller than top surface 112, the amount of the fillet spread out around semiconductor chip 100 can be reduced.

Abstract: A semiconductor package production method containing a step in which a bond layer made of a single-layer film thermoset bond is provided on the back of a wafer on which many semiconductor devices are formed, a dicing tape is pasted onto its bond layer side, and the bond layer and the wafer are diced simultaneously in order to obtain semiconductor devices with the bond layer, and a step in which the semiconductor devices with the bond layer are detached from the dicing tape and die-attached to interposing substrates serving as bodies to which they are bonded; wherein, the aforementioned film thermoset bond contains an epoxy resin, an epoxy resin hardener, and a phenoxy resin as well as 50-80 wt % of spherical silica, and the bond layer is 100 &mgr;m or thicker. A semiconductor device made by this method and a wafer for use with this method.

Abstract: Improve the productivity and cost for the manufacturing of a semiconductor device referred to as a wafer level CSP. The manufacturing method for a semiconductor device related to this invention contains each of the processes that form a wiring (18) for the purpose of electrically connecting each electrode pad (10a) and external connecting terminals on top of a wafer (10) on which semiconductor elements are formed, connect conductive balls that are preformed by a separate process on top of this, and next, cover the above-mentioned wafer with a resin (32) such that the upper portion of the conductive supporting posts (30) are exposed. In a later process, solder balls (34) are arranged as external connecting terminals on the upper portion of the conductive supporting posts, and in the final process, semiconductor elements are formed by dicing the above-mentioned wafer along the boundary lines of the above-mentioned semiconductor elements.

Abstract: A method to realize low-profile semiconductor devices by grinding a resin sealed block and realize level grinding by eliminating warpage of the resin sealed block. Semiconductor devices 10 are produced by step (B) in which multiple semiconductor chips 11 are mounted face down onto the surface of substrate 12, step (C) in which molding resin 13 is injected onto substrate 12 in order to form resin sealed block 18 in which multiple semiconductor chips 11 are sealed, step (E) in which resin sealed block 18 is cut halfway from the side of substrate 12, and step (F) in which resin sealed block 18 is ground from the side of molding resin 13 in order to separate it into individual semiconductor devices 10.

Abstract: A method to realize extremely low profiling of semiconductor devices without reducing the yield and productivity. Semiconductor devices 10 are fabricated using step (B), in which multiple semiconductor chips 11 are mounted on substrate 12 having multiple adjoining chip mounting areas with their functional planes 11a facing the plane of said substrate; step (C), in which molding resin 13 is supplied to aforementioned substrate 12 in order to seal aforementioned multiple semiconductor chips 11; step (D), in which aforementioned molding resin 13 on aforementioned substrate 12 is ground together with said semiconductor chips 11 from its front side until aforementioned semiconductor chips 11 reaches a prescribed thickness; and step (F), in which substrate 12 mounted with aforementioned semiconductor chips 11 is cut into dice together with aforementioned molding resin 13 to form individual semiconductor devices 10.

Abstract: A method to improve the resin sealing reliability in the manufacturing of a wafer-level CSP. The method for manufacturing a semiconductor device of the present invention includes a process that forms wiring 14 and conductive supports 16, which electrically connect electrode pads 10a and corresponding external terminals, on a wafer 10 on which semiconductor elements are formed. In subsequent processes, a groove 18 (preferably V shaped) is formed in the surface of the above-mentioned wafer along the boundary lines of the respective semiconductor elements. Next, the end surfaces of the above-mentioned conductive supports 16 are exposed, and the above-mentioned wafer surface is covered with a resin 19 so that external terminals 20 are arranged on the end surfaces of the conductive supports. In the final process, along the boundary lines of the above-mentioned semiconductor elements, packaged semiconductor devices 32 are obtained by dicing the above-mentioned wafer.