Abstract: A power semiconductor element, a high-voltage electrode electrically connected to the power semiconductor element, a heat radiating plate connected to the power semiconductor element and having heat radiation property, a cooling element connected to the heat radiating plate with an insulating film being interposed, and a seal covering the power semiconductor element, a part of the high-voltage electrode, the heat radiating plate, the insulating film, and a part of the cooling element are included. The cooling element includes a base portion of which part is embedded in the seal and a cooling member connected to the base portion. The base portion and the cooling member are separate from each other, and the cooling member is fixed to the base portion exposed through the seal.

Abstract: A semiconductor device includes a semiconductor chip having a first main surface and a second main surface; a stacked structure on which the semiconductor chip is disposed; and a cooling body on which the stacked structure is disposed. The stacked structure includes a first thermal conductor fixed to the cooling body, an insulator disposed on the first thermal conductor, and a second thermal conductor disposed on the insulator and having the semiconductor chip disposed thereon. The first main surface of the semiconductor chip opposite to the second main surface in contact with the stacked structure is sealed with an insulation material. At least a part of the first thermal conductor protrudes outwardly of the insulation material in plan view.

Abstract: A temperature detection system includes a power semiconductor device, a chip temperature detection device for detecting a temperature of the power semiconductor device, loss-related characteristic value acquiring means for acquiring a loss-related characteristic value that is a characteristic to decide a loss of the power semiconductor device, difference value calculating means for calculating, from the loss-related characteristic value, a difference value between the temperature of the power semiconductor device and a temperature detected by the chip temperature detection device, a corrected temperature signal generating part for generating a corrected temperature signal by adding the temperature detected by the chip temperature detection device and the difference value, and an output part for outputting the corrected temperature signal to the outside.

Abstract: A semiconductor device includes an enclosure of insulating material having an introduction portion and a discharge portion for an insulating refrigerant and also having an opening, filters mounted on the introduction portion and the discharge portion, respectively, so as to prevent conductive foreign matter from entering the enclosure, a power semiconductor element provided on the outside of the enclosure, a heat sink bonded to the power semiconductor element and extending through the opening and within the enclosure, and an insulator covering the portions of the power semiconductor element and the heat sink lying outside of the enclosure.

Abstract: A semiconductor device includes a first electrode electrically connected to an upper surface of a semiconductor element, a first internal electrode electrically connected to a lower surface of the semiconductor element and having a plurality of first comb finger portions and a first connection portion connecting the plurality of first comb finger portions together, a second electrode electrically connected to the first internal electrode, a second internal electrode electrically connected to a lower surface of the first electrode and having a plurality of second comb finger portions and a second connection portion connecting the plurality of second comb finger portions together, the plurality of second comb finger portions being interdigitated with but not in contact with the plurality of first comb finger portions, and a lower dielectric filling the space between the plurality of first comb finger portions and the plurality of second comb finger portions.

Abstract: A semiconductor device of the present invention is a semiconductor device applicable in a cooling system including an ECU functioning as a setting part that sets target temperature of a refrigerant used to cool the semiconductor device, and a sensor functioning as a detector that detects the temperature of the refrigerant as refrigerant's temperature. The semiconductor device generates variable heating loss. The semiconductor device includes a heating controller that controls the heating loss in the semiconductor device such that the target temperature and the refrigerant's temperature become the same.

Abstract: A semiconductor circuit device includes a semiconductor circuit including a switching element, a temperature monitoring unit, and a control unit. The temperature monitoring unit detects or estimates a temperature of a component connected to an inside or an outside of the semiconductor circuit. Here, the temperature of the component changes in accordance with a frequency of a current flowing through the component, and the frequency of the current flowing through the component changes in accordance with a switching frequency of the switching element. The control unit adjusts the switching frequency of the switching element such that the temperature of the component is equal to a target temperature.

Abstract: A semiconductor device includes a semiconductor module having a heat conductive portion formed of metal and also having a molded resin having a surface at which the heat conductive portion is exposed, a cooling body secured to the semiconductor module by means of bonding material, and heat conductive material formed between and thermally coupling the heat conductive portion and the cooling body.

Abstract: A sub-unit judges whether an instruction received from an external unit is executable. If the instruction is judged to be executable, the sub-unit executes it. If, on the other hand, the instruction is judged to be unexecutable, the sub-unit notifies the external unit of an executable plan.

Abstract: A semiconductor circuit device includes a semiconductor circuit including a switching element, a temperature monitoring unit, and a control unit. The temperature monitoring unit detects or estimates a temperature of a component connected to an inside or an outside of the semiconductor circuit. Here, the temperature of the component changes in accordance with a frequency of a current flowing through the component, and the frequency of the current flowing through the component changes in accordance with a switching frequency of the switching element. The control unit adjusts the switching frequency of the switching element such that the temperature of the component is equal to a target temperature.

Abstract: A semiconductor device includes an enclosure of insulating material having an introduction portion and a discharge portion for an insulating refrigerant and also having an opening, filters mounted on the introduction portion and the discharge portion, respectively, so as to prevent conductive foreign matter from entering the enclosure, a power semiconductor element provided on the outside of the enclosure, a heat sink bonded to the power semiconductor element and extending through the opening and within the enclosure, and an insulator covering the portions of the power semiconductor element and the heat sink lying outside of the enclosure.

Abstract: A semiconductor device includes a semiconductor chip having a first main surface and a second main surface; a stacked structure on which the semiconductor chip is disposed; and a cooling body on which the stacked structure is disposed. The stacked structure includes a first thermal conductor fixed to the cooling body, an insulator disposed on the first thermal conductor, and a second thermal conductor disposed on the insulator and having the semiconductor chip disposed thereon. The first main surface of the semiconductor chip opposite to the second main surface in contact with the stacked structure is sealed with an insulation material. At least a part of the first thermal conductor protrudes outwardly of the insulation material in plan view.

Abstract: A system control device includes a protective control section for providing protective control while allowing a first control command value computation section to perform computations during a period during which a first feedback control section exercises control; a control command value decrease section; a termination time acquisition section for acquiring the information about the termination time for the protective control; and a termination control section which uses a control command value decreased by the control command value decrease section as the initial control command value after the termination time.

Abstract: The present invention provides a semiconductor device includes arms formed by two semiconductor elements, a map memory device which stores therein a correlation map between a control value for each of the arms and an optimized dead time to be set for the control value or is capable of storing the same therein, drive control value acquiring means for acquiring a drive control value of each of the arms, and a dead time generating circuit for extracting the optimized dead time corresponding to the drive control value from the correlation map. The time taken until the other of the semiconductor elements is turned on after one thereof has received a command to turn off the same is the optimized dead time extracted by the dead time generating circuit.

Abstract: A temperature detection system includes a power semiconductor device, a chip temperature detection device for detecting a temperature of the power semiconductor device, loss-related characteristic value acquiring means for acquiring a loss-related characteristic value that is a characteristic to decide a loss of the power semiconductor device, difference value calculating means for calculating, from the loss-related characteristic value, a difference value between the temperature of the power semiconductor device and a temperature detected by the chip temperature detection device, a corrected temperature signal generating part for generating a corrected temperature signal by adding the temperature detected by the chip temperature detection device and the difference value, and an output part for outputting the corrected temperature signal to the outside.

Abstract: Disclosed is a system control device that includes a semiconductor element; an actual control value acquisition section; a deviation computation section for computing the deviation between the actual control value and a target control value; an integral term computation means for computing an integral term contained in a control command value; a first control command value computation section for determining the next control command value from the immediately preceding integral term and the deviation; a first feedback control section for exercising control in accordance with the first control command value; a protective control section for providing protective control while allowing the first control command value computation section to perform computations during a period during which the first feedback control section exercises control; a control command value decrease section; a termination time acquisition section for acquiring the information about the termination time for the protective control; and a t

Abstract: The present invention provides a semiconductor device includes arms formed by two semiconductor elements, a map memory device which stores therein a correlation map between a control value for each of the arms and an optimized dead time to be set for the control value or is capable of storing the same therein, drive control value acquiring means for acquiring a drive control value of each of the arms, and a dead time generating circuit for extracting the optimized dead time corresponding to the drive control value from the correlation map. The time taken until the other of the semiconductor elements is turned on after one thereof has received a command to turn off the same is the optimized dead time extracted by the dead time generating circuit.

Abstract: A transfer mold type power module (“TPM”) is provided with a projection at each of the four corners on its front main surface. The TPM is also provided a first screw hole at its center. A shielding plate is provided with a second crew hole in a position that corresponds to the first screw hole. A control substrate is provided with third screw holes in positions that correspond to the projections. The shielding plate and the TPM are joined by putting a first screw through the first and second screw holes and temporarily fastening the tip of the first screw by a temporary fastening member at the rear main surface of the TPM. The control substrate and the TPM are joined by second screws via the third screw holes.

Abstract: A sub-unit judges whether an instruction received from an external unit is executable. If the instruction is judged to be executable, the sub-unit executes it. If, on the other hand, the instruction is judged to be unexecutable, the sub-unit notifies the external unit of an executable plan.

Abstract: A power semiconductor device which makes a heat come hard to arise in a particular element and is able to control an increase of the amount of a power loss caused by a tail current, even in case that plural power semiconductor elements are connected in parallel is provided. A control part (CTa) performs a regional control instead of a general control that all of IGBT elements (PD1 to PD4) are made to operate identically with providing a PWM signal (S0) for all of the elements. In other words, when a certain pulse in a pulse row of the PWM signal (S0) is inputted, only a part of switches (SW1 and SW2) is turned on and only a part of the IGBT elements (PD1 and PD2) is made to operate, and when a next pulse is inputted, only the other part of switches (SW3 and SW4) is turned on and only the other part of IGBT elements (PD3 and PD4) is made to operate. Moreover, the operation described above is repeated.