Abstract: Processing by an information processing system is speeded up. A first semiconductor integrated circuit designates a first address of a memory connected to a second semiconductor integrated circuit that is a data transmission destination, based on first memory map information in which addresses of memories respectively used by the semiconductor integrated circuits are defined, converts the first address to a second address of the memory defined in second memory map information referred to by the data transmission destination, and outputs the second address and transmission data by using a PCIe interface. A switch transfers the second address and the transmission data to the data transmission destination by using PCIe interfaces. The data transmission destination receives the second address and the transmission data by using a PCIe interface and writes the transmission data into the reception buffer region of the memory corresponding to the second address.

Abstract: A method for manufacturing 1-chloro-3,3,3-trifluoropropene (1230zd) is provided. The method includes contacting a halogenated hydrocarbon compound having a carbon number of 3 and represented by a general formula (1) with a metal catalyst in a gas phase. CFaCl3-a—CH2—CHFbCl2-b??(1) In the formula, a is an integer from 0 to 2, b is 1 or 2 when a=0, b is 0 or 1 when a=1, and b is 0 when a=2.

Abstract: A laminated electronic component includes an element body and a pair of conductors. The element body is formed by laminating a plurality of element-body layers in a first direction. The pair of conductors is formed by laminating a plurality of conductor layers in the first direction. The pair of conductors is provided to the element body in such a way as to be separated from each other in a second direction orthogonal to the first direction. At a cross section orthogonal to the first direction, the pair of conductors has an uneven portion and the element body has an uneven portion engaged with the uneven portion of the pair of conductors.

Abstract: A laminated electronic component includes an element body and a pair of conductors. The element body is formed by laminating a plurality of element-body layers in a first direction. The pair of conductors is formed by laminating a plurality of conductor layers in the first direction. The pair of conductors is provided to the element body in such a way as to be separated from each other in a second direction orthogonal to the first direction. At a cross section orthogonal to the first direction, the pair of conductors has an uneven portion and the element body has an uneven portion engaged with the uneven portion of the pair of conductors.

Abstract: First to third insulators are successively formed in this order over a first conductor over a semiconductor substrate; a hard mask with a first opening is formed thereover; a resist mask with a second opening is formed thereover; a third opening is formed in the third insulator; a fourth opening is formed in the second insulator; the resist mask is removed; a fifth opening is formed in the first to third insulators; a second conductor is formed to cover an inner wall and a bottom surface of the fifth opening; a third conductor is formed thereover; polishing treatment is performed so that the hard mask is removed, and that levels of top surfaces of the second and third conductors and the third insulator are substantially equal to each other; and an oxide semiconductor is formed thereover. The second insulator is less permeable to hydrogen than the first and third insulators, the second conductor is less permeable to hydrogen than the third conductor.

Abstract: Cultivating a pluripotent stem cell in a medium comprising at least one member selected from the group consisting of ethanolamine, an ethanolamine analog, and a pharmaceutically acceptable salt thereof, and which is substantially free of ?-mercaptoethanol or contains ?-mercaptoethanol at a concentration of not more than 9 ?M, and the like, is effective for the proliferation of a pluripotent stem cell while maintaining an undifferentiated state.

Abstract: A laminated electronic component includes an element body and a pair of conductors. The element body is formed by laminating a plurality of element-body layers in a first direction. The pair of conductors is formed by laminating a plurality of conductor layers in the first direction. The pair of conductors is provided to the element body in such a way as to be separated from each other in a second direction orthogonal to the first direction. At a cross section orthogonal to the first direction, the pair of conductors has an uneven portion and the element body has an uneven portion engaged with the uneven portion of the pair of conductors.

Abstract: A manufacturing method of 1-chloro-3,3,3-trifluoropropene (1233zd) is provided. This manufacturing method includes a reaction in which a halogenated hydrocarbon compound having a carbon number of 3 and represented by a general formula (1) is heated: CFaCl3-a—CH2—CHFbCl2-b??(1) In the formula, a is an integer from 0 to 2, b is 1 or 2 when a=0, b is 0 or 1 when a=1, and b is 0 when a=2.

Abstract: A medium which contains a riboflavin derivative is useful for proliferating and culturing pluripotent stem cells such as iPS cells and ES cells, and is free from degradation due to storage as complete medium.

Abstract: A medium which comprises a fibroblast growth factor (FGF), and a sulfated compound or a pharmaceutically acceptable salt thereof at a concentration which promotes the growth of a stem cell in the presence of FGF, is useful for culturing stem cells.

Abstract: A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes an oxide; a first conductor and a second conductor over the oxide; a third conductor over the oxide; a first insulator provided between the oxide and the third conductor and covering a side surface of the third conductor; a second insulator over the third conductor and the first insulator; a third insulator positioned over the first conductor and at a side surface of the second insulator; a fourth insulator positioned over the second conductor and at a side surface of the second insulator; a fourth conductor being in contact with a top surface and a side surface of the third insulator and electrically connected to the first conductor; and a fifth conductor being in contact with a top surface and a side surface of the fourth insulator and electrically connected to the second conductor.

Abstract: A semiconductor device with a large storage capacity per unit area is provided. The semiconductor device includes a first insulator including a first opening, a first conductor that is over the first insulator and includes a second opening, a second insulator that is over the first insulator and includes a third opening, and an oxide penetrating the first opening, the second opening, and the third opening. The oxide includes a first region at least in the first opening, a second region at least in the second opening, and a third region at least in the third opening. The resistances of the first region and the third region are lower than the resistance of the second region.

Abstract: First to third insulators are successively formed in this order over a first conductor over a semiconductor substrate; a hard mask with a first opening is formed thereover; a resist mask with a second opening is formed thereover; a third opening is formed in the third insulator; a fourth opening is formed in the second insulator; the resist mask is removed; a fifth opening is formed in the first to third insulators; a second conductor is formed to cover an inner wall and a bottom surface of the fifth opening; a third conductor is formed thereover; polishing treatment is performed so that the hard mask is removed, and that levels of top surfaces of the second and third conductors and the third insulator are substantially equal to each other; and an oxide semiconductor is formed thereover. The second insulator is less permeable to hydrogen than the first and third insulators, the second conductor is less permeable to hydrogen than the third conductor.

Abstract: Cultivating a pluripotent stem cell in a medium comprising at least one member selected from the group consisting of ethanolamine, an ethanolamine analog, and a pharmaceutically acceptable salt thereof, and which is substantially free of ?-mercaptoethanol or contains ?-mercaptoethanol at a concentration of not more than 9 ?M, and the like, is effective for the proliferation of a pluripotent stem cell while maintaining an undifferentiated state.

Abstract: A laminated electronic component includes an element body and a pair of conductors. The element body is formed by laminating a plurality of element-body layers in a first direction. The pair of conductors is formed by laminating a plurality of conductor layers in the first direction. The pair of conductors is provided to the element body in such a way as to be separated from each other in a second direction orthogonal to the first direction. At a cross section orthogonal to the first direction, the pair of conductors has an uneven portion and the element body has an uneven portion engaged with the uneven portion of the pair of conductors.

Abstract: A method for producing 1,2-dichloro-3,3,3-trifluoropropene according to the present invention includes the step of reacting 1,1,2,3,3-pentachloropropene with a fluorinating agent where hydrogen fluoride is used as the fluorinating agent.

Abstract: A laminated coil component includes an element assembly formed by laminating a plurality of insulation layers and a coil unit formed inside the element assembly by a plurality of coil conductors. The element assembly includes a coil unit arrangement layer which has the coil unit arranged therein, and at least a pair of shape retention layers which is provided to have the coil unit arrangement layer interposed therebetween to retain a shape of the coil unit arrangement layer. The shape retention layer is made from glass-ceramic containing SrO, and a softening point of the coil unit arrangement layer is lower than a softening point or a melting point of the shape retention layer.

Abstract: A semiconductor device with a large storage capacity per unit area is provided. The semiconductor device includes a first insulator including a first opening, a first conductor that is over the first insulator and includes a second opening, a second insulator that is over the first insulator and includes a third opening, and an oxide penetrating the first opening, the second opening, and the third opening. The oxide includes a first region at least in the first opening, a second region at least in the second opening, and a third region at least in the third opening. The resistances of the first region and the third region are lower than the resistance of the second region.

Abstract: Media which contain 4-tryptophan or an L-tryptophan derivative at a concentration of not less than 176 ?M are useful for culturing pluripotent stem cells.

Abstract: A method for manufacturing 1-chloro-3,3,3-trifluoropropene (1230zd) is provided. The method includes contacting a halogenated hydrocarbon compound having a carbon number of 3 and represented by a general formula (1) with a metal catalyst in a gas phase. CFaCl3-a—CH2—CHFbCl2-b ??(1) In the formula, a is an integer from 0 to 2, b is 1 or 2 when a=0, b is 0 or 1 when a=1, and b is 0 when a=2.