Abstract: A butted contact structure is provided. In one embodiment, a structure includes a first transistor on a substrate, the first transistor comprising a first source or drain region, a first gate, and a first gate spacer being disposed between the first gate and the first source or drain region. The structure includes a second transistor on the substrate, the second transistor comprising a second source or drain region, a second gate, and a second gate spacer being disposed between the second gate and the second source or drain region. The structure includes a butted contact disposed above and extending from the first source or drain region to at least one of the first or second gate, a portion of the first gate spacer extending a distance into the butted contact to separate a first bottom surface of the butted contact from a second bottom surface of the butted contact.

Abstract: A semiconductor device includes a silicon substrate and a fin formed above the substrate. The fin provides active regions for two devices, such as gate-all-around transistors. The semiconductor device also includes a fin-insulating structure positioned to electrically isolate the active regions for the two devices. The fin-insulating structure is formed in a trench, with a first portion adjacent the fin and a second portion below the fin and extending into the substrate. The fin-insulating structure includes an oxide liner in the second portion of the trench, but not the first portion. The fin-insulating structure is further filled with an insulating material such as silicon nitride.

Abstract: A nail drive device of electric nail gun includes a nailing rod and a rotary actuator that can output a specific rotation angle and can drive the nailing rod to move downward for nailing. Specifically, the rotary actuator includes a stator and a rotor surrounding it, between the stator and the rotor, even groups of electro-magnetic mutual action components are configured in pairs, to generate a tangential force to drive the rotor to rotate for a specific rotation angle, and to drive the nailing rod to move for a nailing stroke. The nailing stroke can be determined by the specific rotation angle. Thus, through the above configuration of the rotary actuator, the structure of the electric nail gun can be simplified.

Abstract: An air-path structure of a pneumatic nail gun includes a main chamber formed in a gun body, a piston driving chamber and a timekeeping chamber that continuously releases pressurized air to the outside. The gun body is equipped with a trigger valve and a bar valve, and a security chamber and an auxiliary chamber are formed in the trigger valve; the trigger valve controls the pressurized air in the piston driving chamber to be discharged to the outside; and the bar valve controls the pressurized air in the main chamber to go into the piston driving chamber, the timekeeping chamber and the auxiliary chamber. The security chamber is permanently connected to the main chamber for concentrating upon the pressurized air, and the bar valve controls the pressurized air in the main chamber to be discharged into the timekeeping chamber, so as to improve the safety of pneumatic nail gun when used.

Abstract: A method for making a semiconductor device includes patterning at least one dielectric layer disposed over a conductive cap layer to form a via opening penetrating through the at least one dielectric layer to expose the conductive cap layer and to form a top portion of the conductive cap layer into a metal oxide layer; converting the metal oxide layer to a metal oxynitride layer by a soft ashing process using a processing gas containing nitrogen gas; removing the metal oxynitride layer from a remaining portion of the conductive cap layer; and forming a via contact in the via opening to electrically connect the remaining portion of the conductive cap layer.

Abstract: An electrical connector is disclosed. The electrical connector has a casing, a terminal seat and a conductive plastic element. The terminal seat is mounted in the casing and has an insulator board and a terminal set. The terminal set has a ground terminal and a high-speed signal terminal set. One side of the conductive plastic element is mounted on an inner wall of the casing and another side thereof passes through the insulator board to be close to the high-speed signal terminal set. When the casing is electrically connected to a ground, the conductive plastic element is electrically connected to the ground through the casing. Therefore, the conductive plastic element may eliminate a noise interference caused by the high-speed signal terminal set during high-speed transmission. A crosstalk and a common-mode interference are also reduced to keep the stability of signal transmission of the electrical connector.

Abstract: A thrust plate for use in a scroll compressor is described. The thrust plate comprises a disk-shaped body defining a plane and having a first side and a second side, wherein the second side opposes the first side, at least one protrusion extending from the first side, and at least one recess located at the second side, wherein the at least one protrusion and the at least one recess overlap at least partially in a direction perpendicular to the plane. Further, a system is described, wherein the system comprises a thrust plate with at least one protrusion and an orbiting scroll plate with at least one recess, wherein the at least one protrusion and the at least one recess overlap. Also, a scroll compressor having either a corresponding thrust plate or a corresponding system is described.

Abstract: A scroll compressor is described. The scroll compressor comprises a case having a high-pressure side and a low-pressure side, a stationary scroll plate having a base plate with a first side having at least one projection, which forms a spiral wrap, and a second side having a first annular protrusion, a pilot plate for separating the high-pressure side of the case from the low-pressure side of the case and the pilot plate abutting the second side of the stationary scroll plate, wherein the pilot plate has a first side, wherein the first side faces the second side of the stationary scroll plate and wherein the first side has a second annular protrusion, and a seal, wherein the seal seals a radial gap between the first annular protrusion and the second annular protrusion.

Abstract: In one exemplary aspect, a method for semiconductor manufacturing comprises forming first and second silicon nitride features on sidewall surfaces of a contact hole, where the contact hole is disposed in a dielectric layer and above a source/drain (S/D) feature. The method further comprises forming a contact plug in the contact hole, the contact plug being electrically coupled to the S/D feature, removing a top portion of the contact plug to create a recess in the contact hole, forming a hard mask layer in the recess, and removing the first and second silicon nitride features via selective etching to form first and second air gaps, respectively.

Abstract: A method of forming a semiconductor device includes forming a first dummy gate structure and a second dummy gate structure over a fin; forming a first dielectric layer around the first dummy gate structure and around the second dummy gate structure; removing the first dummy gate structure and the second dummy gate structure to form a first recess and a second recess in the first dielectric layer, respectively; forming a gate dielectric layer in the first recess and the second recess; forming a first work function layer over the gate dielectric layer in the first and the second recesses; removing the first work function layer from the first recess; converting a surface layer of the first work function layer in the second recess into an oxide; and forming a second work function layer in the first recess over the gate dielectric layer and in the second recess over the oxide.

Abstract: A first dielectric layer is formed over upper and side surfaces of a semiconductor fin structure. A mask layer is formed over a first portion of the first dielectric layer disposed over the upper surface of the fin structure. The mask layer and the first dielectric layer have different material compositions. Second portions of the first dielectric layer disposed on side surfaces of the fin structure are etched. The mask layer protects the first portion of the first dielectric layer from being etched. A second dielectric layer is formed over the mask layer and the side surfaces of the fin structure. An oxidation process is performed to convert the mask layer into a dielectric material having substantially a same material composition as the first or second dielectric layer. The dielectric material and remaining portions of the first or second dielectric layer collectively serve as a gate dielectric of a transistor.

Abstract: An air-path structure of pneumatic a nail gun, formed inside a gun body containing high-pressure air, comprises a main air chamber, a firing valve air chamber and a time-delayed air chamber that continuously releases the high-pressure air to the atmosphere. The gun body is configured with a trigger valve and a slider valve. The inside of the trigger valve is formed with a safety-on air chamber and a safety-off air chamber. The trigger valve controls the high-pressure air inside the firing valve air chamber to be discharged to the atmosphere. The slider valve controls the high-pressure air inside the main air chamber flowing toward the firing valve air chamber, the time-delayed air chamber and the safety-off air chamber. Specifically, the safety-on air chamber is constantly communicated with the main air chamber and constantly contains high-pressure air, and the slider valve can control the high-pressure air inside the safety-off air chamber flowing into the time-delayed air chamber.

Abstract: Embodiments described herein relate to plasma processes. A plasma process includes generating a plasma containing negatively charged oxygen ions. A substrate is exposed to the plasma. The substrate is disposed on a pedestal while being exposed to the plasma. While exposing the substrate to the plasma, a negative direct current (DC) bias voltage is applied to the pedestal to repel the negatively charged oxygen ions from the substrate.

Abstract: Scanning and rescanning detect state inconsistencies between data entities in repositories or other components of a distributed computing environment. First, entities are scanned based on a cutoff time TO. Entities for which state comparison is undesired are placed in a skipped entity list. Any inconsistencies found in other entities is reported. Then subsequent rescanning fetches state and attempts to pare down the skipped entity list. Rescanning may be capped. Inconsistencies may be detected without requiring downtime from services that update data entity state, and false reports of inconsistency may be avoided.

Abstract: A butted contact structure is provided. In one embodiment, a structure includes a first transistor on a substrate, the first transistor comprising a first source or drain region, a first gate, and a first gate spacer being disposed between the first gate and the first source or drain region. The structure includes a second transistor on the substrate, the second transistor comprising a second source or drain region, a second gate, and a second gate spacer being disposed between the second gate and the second source or drain region. The structure includes a butted contact disposed above and extending from the first source or drain region to at least one of the first or second gate, a portion of the first gate spacer extending a distance into the butted contact to separate a first bottom surface of the butted contact from a second bottom surface of the butted contact.

Abstract: In one exemplary aspect, a method for semiconductor manufacturing comprises forming first and second silicon nitride features on sidewall surfaces of a contact hole, where the contact hole is disposed in a dielectric layer and above a source/drain (S/D) feature. The method further comprises forming a contact plug in the contact hole, the contact plug being electrically coupled to the S/D feature, removing a top portion of the contact plug to create a recess in the contact hole, forming a hard mask layer in the recess, and removing the first and second silicon nitride features via selective etching to form first and second air gaps, respectively.

Abstract: A semiconductor device includes a substrate, an electronic component, a cover and a liquid metal. The electronic component is disposed on the substrate. The cover is disposed on the substrate and covers the electronic component. The liquid metal is formed between the cover and the electronic component.

Abstract: A dummy fin described herein includes a low dielectric constant (low-k or LK) material outer shell. A leakage path that would otherwise occur due to a void being formed in the low-k material outer shell is filled with a high dielectric constant (high-k or HK) material inner core. This increases the effectiveness of the dummy fin to provide electrical isolation and increases device performance of a semiconductor device in which the dummy fin is included. Moreover, the dummy fin described herein may not suffer from bending issues experienced in other types of dummy fins, which may otherwise cause high-k induced alternating current (AC) performance degradation. The processes for forming the dummy fins described herein are compatible with other fin field effect transistor (finFET) formation processes and are be easily integrated to minimize and/or prevent polishing issues, etch back issues, and/or other types of semiconductor processing issues.

Abstract: A method includes forming a gate structure on a semiconductor substrate; depositing a carbon-containing seal layer over the gate structure; depositing a nitrogen-containing seal layer over the carbon-containing seal layer; introducing an oxygen-containing precursor on the nitrogen-containing seal layer; heating the substrate to dissociate the oxygen-containing precursor into an oxygen radical to dope into the nitrogen-containing seal layer; after heating the substrate, etching the nitrogen-containing seal layer and the carbon-containing seal layer, such that a remainder of the nitrogen-containing seal layer and the carbon-containing seal layer remains on a sidewall of the gate structure as a gate spacer.

Abstract: A semiconductor device and method of manufacture are provided which utilize a remote plasma process which reduces or eliminates segregation of material. By reducing segregation of the material, overlying conductive material can be deposited on a smoother interface. By depositing on smoother interfaces, overall losses of the deposited material may be avoided, which improves the overall yield.