Abstract: The present invention provides a bonding material and a method of bonding for metal bonding at a bonding interface capable of a higher bonding strength at a lower temperature without application of pressure, compared to a bonding material of metal particles having an average particle size of not greater than 100 nm. An electrically conductive bonding material including (A) silver particles, (B) silver oxide, and (C) a dispersant including organic material containing not more than 30 carbon atoms as essential components, wherein a total amount of (A) the silver powder, (B) the silver oxide powder, and (C) the dispersant including an organic material containing not more than 30 carbon atoms is in a range of 99.0% to 100% by weight, is provided. In other words, no resin binder is contained.

Abstract: When silver oxide is reduced to silver, a large number of cores of metallic silver are formed inside the silver oxide. Then, the silver oxide is reduced in a manner of being hollowed out while its original outer configuration is being maintained. As a result, the curvature of the silver generated becomes larger. The utilization of this microscopic-particle implementation mechanism allows accomplishment of the bonding even if the silver oxide is supplied not in a particle-like configuration, but in a closely-packed layer-like configuration. In the present invention, there is provided an electronic member including an electrode for inputting/outputting an electrical signal, or a connection terminal for establishing a connection with the electrical signal, wherein the uppermost surface of the electrode or the connection terminal is a silver-oxide layer.

Abstract: The present invention is directed to enhancing the bonding reliability of a bonding portion between an Al electrode of a semiconductor device and a bonding material having metal particles as a main bonding agent. In the semiconductor device, a semiconductor element and an Al electrode are connected to each other with a bonding layer made of Ag or Cu interposed therebetween, and the bonding layer and the Al electrode are bonded to each other with an amorphous layer interposed therebetween. It is possible to obtain excellent bonding strength to the Al electrode by performing a bonding process in atmospheric air by using a bonding material including a metal oxide particle with an average diameter of 1 nm to 50 ?m, an acetic acid- or formic acid-based compound, and a reducing agent made of an organic material.

Abstract: The inverter has a plurality of arms for conducting or cutting off a current and each arm has a switching device and a first and a second wiring layer for connecting the switching device. The first and second wiring layers of each arm are respectively formed on insulating substrates, and one face of the switching device is fixed to the first wiring layer, and the second wiring layer and the other face of the switching device are electrically connected by a laminal conductor, and the laminal conductor has a first and a second connection, and the first connection of the laminal conductor is fixed to the other face of the switching device, and the second connection of the laminal conductor is fixed to the second wiring layer. Thereby, a large current of the inverter can be realized and the assembly capacity of the inverter or the vehicle drive unit will be improved.

Abstract: A semiconductor device in which the lifetime of mounted components can be prolonged. A cooling system for controlling the temperature of a refrigerant through a heating section and a radiator is provided. The semiconductor device is connected to the cooling system and is cooled. A variation width (?T1) of temperature controlled by the cooling system through the heating section and the radiator is smaller than a temperature variation (?T2) of the refrigerant caused by variations in operating conditions of the semiconductor device (?T1??T2).

Abstract: The power conversion apparatus uses the semiconductor device. Said semiconductor device includes a first group of power semiconductor elements at least one of which is electrically connected between a first potential and a third potential, a second group of power semiconductor elements at least one of which is electrically connected between a second potential and the third potential, and a third group of power semiconductor elements at least one of which is electrically connected between the first potential and the third potential. The second group is disposed between the first group and third group. Thereby, a low-loss semiconductor device having both inductance reducibility and heat generation balancing capability and also an electric power conversion apparatus using the same is provided.

Abstract: A semiconductor device which uses a semiconductor element having main current input/output electrodes, one and the other of which are extended up to a one surface and a remaining surface of a semiconductor chip respectively for causing one of the input/output electrodes to be contacted with a conductive layer of a insulating substrate, whereby the semiconductor element is supported on or above the insulating substrate. A conductive strip which is made of a composite material of carbon and aluminum or a composite material of carbon and copper is used for connection between the remaining input/output electrode of the semiconductor chip and the conductive layer of the insulating substrate.

Abstract: A power semiconductor module has a silicon nitride insulated substrate, a metal circuit plate made of Cu or a Cu alloy, which is disposed on one surface of the silicon nitride insulated substrate, a semiconductor chip mounted on the metal circuit plate, and a heat dissipating plate made of Cu or a Cu alloy, which is disposed on the other surface of the silicon nitride insulated substrate; a carbon fiber-metal composite made of carbon fiber and Cu or a Cu alloy is provided between the silicon nitride insulated substrate and the metal circuit plate; the thermal conductivity of the carbon fiber-metal composite in a direction in which carbon fiber of the carbon fiber-metal composite is oriented is 400 W/m·k or more. Accordingly, a power semiconductor module that has a low thermal resistance between the semiconductor chip and a heat dissipating mechanism and also has improved cooling capacity is provided.

Abstract: A semiconductor device with improved the adhesion between bonding pads and ball portions of gold wires is provided to improve the reliability of a semiconductor device. About 1 wt. % of Pd is contained in gold wires for connection between electrode pads formed on a wiring substrate and electrode pads (exposed areas of a top layer wiring formed mainly of Al) formed on a semiconductor chip. In bonded portions between the electrode and ball portions of the gold wires, an interdiffusion of Au and Al is suppressed to prevent the formation of Au4Al after PCT (Pressure Cooker Test). Thus, a desired bonding strength is obtained even when the pitch of the electrode pads is smaller than 65 ?m and the diameter of the ball portion is smaller than 55 ?m or the diameter of the wire portion of each gold wire is not larger than 25 ?m.

Abstract: A semiconductor device having a structure in which a semiconductor element and a Cu or Ni electrode are connected by way of a bonding layer comprising Cu, and the Cu bonding layer and the Cu or Ni electrode are diffusion-bonded to each other. The bonding layer is formed by conducting bonding in a reducing atmosphere by using a bonding material containing particles of Cu oxide with an average particle size of 1 nm to 50 ?m and a reducing agent comprising an organic material, thereby providing excellent bonding strength to Ni or Cu electrode.

Abstract: A bonding material comprising metal particles coated with an organic substance having carbon atoms of 2 to 8, wherein the metal particles comprises first portion of 100 nm or less, and a second portion larger than 100 nm but not larger than 100 ?m, each of the portions having at least peak of a particle distribution, based on a volumetric base. The disclosure is further concerned with a bonding method using the bonding material.

Abstract: A semiconductor device, wherein a first metallic member is bonded to a first electrode of a semiconductor element via a first metallic body containing a first precious metal, and a second metallic member is bonded to a second electrode via a second metallic body containing a second precious metal.

Abstract: A semiconductor device, wherein a first metallic member is bonded to a first electrode of a semiconductor element via a first metallic body containing a first precious metal, and a second metallic member is bonded to a second electrode via a second metallic body containing a second precious metal.

Abstract: There is provided a conductive sintered layer forming composition and a conductive sintered layer forming method that can lower heating temperature and shorten heating time for a process of accelerating sintering or bonding by sintering of metal nano-particles coated with an organic substance. The conductive sintered layer forming composition may be obtained by utilizing a phenomenon that particles may be sintered at low temperature by mixing silver oxide with metal particles coated with the organic substance and having a grain size of 1 nm to 5 ?m as compared to sintering each simple substance. The conductive sintered layer forming composition of the invention is characterized in that it contains the metal particles whose surface is coated with the organic substance and whose grain size is 1 nm to 5 ?m and the silver oxide particles.

Abstract: It is an object of this invention to provide a bonding material capable of realizing bonding by metallic bonding at a bonding interface at a lower temperature compared to a bonding material using a metal particle having an average particle diameter of not more than 100 nm and a bonding method. There is provided a bonding material including a metal particle precursor being at least one selected from the group consisting of a particle of a metal oxide, a particle of a metal carbonate, and a particle of a metal carboxylate and having an average particle diameter of 1 nm to 50 ?m and a reducing agent composed of an organic substance, wherein the content of the metal particle precursor is more than 50 parts by mass and not more than 99 parts by mass per 100 parts by mass of the bonding material.

Abstract: A semiconductor device, wherein a first metallic member is bonded to a first electrode of a semiconductor element via a first metallic body containing a first precious metal, and a second metallic member is bonded to a second electrode via a second metallic body containing a second precious metal.

Abstract: An electronic part mounting method, a semiconductor module, and a semiconductor device, which can reduce a mounting area and a device thickness. In an electronic part mounting method for bonding an electrode formed on a substrate and an electrode formed on an electronic part to each other, the method comprises the step of bonding both the electrodes through a metal layer made up of aggregated particles of at least one kind of metal. Then, the metal particles have an average particle size of 1 to 50 nm. Preferably, the metal particles form a metal layer having a thickness of 5 to 100 ?m.

Abstract: A semiconductor device having both high strength and high thermal radiation that is capable of being applied to mounting on automobiles experiencing many thermal cycles, and a manufacturing method thereof are provided. A circuit board 1a for a resin encapsulated semiconductor module device has a configuration where a silicon nitride plate 2 with a thickness of 0.635 mm has copper plates of 1.0 mm and 0.8 mm bonded to both sides thereof via active metal. A copper plate 3a is bonded to the surface side of the silicon nitride plate 2, and a prescribed circuit pattern is formed on the copper plate 3a. Tin-silver-copper cream solder layers 4a and 4b with a thickness of 200 ?m are formed at a prescribed location on the circuit pattern 3a on which a semiconductor element 6 is mounted and at a prescribed location of a base plate 1 on which the circuit board 1a is disposed.

Abstract: A semiconductor device, wherein a first metallic member is bonded to a first electrode of a semiconductor element via a first metallic body containing a first precious metal, and a second metallic member is bonded to a second electrode via a second metallic body containing a second precious metal.

Abstract: A dryer apparatus for use with a woven and knitted fabric is constructed such that a first drying rack is disposed at an upper portion of the frame, and at least one second drying rack is disposed at a lower. Each of the drying racks is formed of a ventilated drying surface. A first drying device is disposed above the first drying rack, and a second drying device is disposed above the second rack. Each of the drying devices is formed of a drying irradiation surface for irradiating a heat ray and/or heated air, and is constructed to be movable for reciprocation along the drying surface of the drying rack by means of a driving device. The second drying device is arranged so as to be pivotable between a position in which the drying irradiation surface of the second drying device opposes an upper surface of the at least one second drying rack, and a position in which the drying irradiation surface of the second drying device opposes a lower surface of the first drying rack.