Abstract: A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a phase shift film that shifts a phase of the EUV light, in this order. An opening pattern is to be formed in the phase shift film. The phase shift film has a refractive index of 0.920 or less with respect to the EUV light, an extinction coefficient of 0.024 or more with respect to the EUV light, a thickness of 50 nm or less, a normalized image log slope of 2.9 or more for a transferred image when a line-and-space pattern is formed on a target substrate, and a tolerance range of a focal depth of the transferred image is 60 nm or less.

Abstract: A rotor includes a shaft, a cylindrical rotor core, a connector, magnets and a cover. The shaft extends along a central axis. The rotor core surrounds the shaft. The connector is provided radially inside the rotor core and connects the rotor core and the shaft. The magnets are provided radially outside the rotor core along a circumferential direction. The cover is provided radially outside the magnets. The connector includes a cylindrical body surrounding the shaft and a flange. The flange extends radially outward from one axial end of the body and faces the magnets in the axial direction. The cover includes a peripheral surface and an eave. The peripheral surface faces the magnets in a radial direction. The eave extends radially inward from an other axial end of the peripheral surface and faces the magnets in the axial direction.

Abstract: A resin composition including: at least one resin ingredient selected from the group made of a resin (A) having a side chain (a) containing a hydrogen-bonding cross-linking moiety with a carbonyl-containing group and/or a nitrogen-containing heterocycle and having a glass transition point of 25° C. or lower, and a resin (B) containing a hydrogen-bonding cross-linking moiety and a covalent-bonding cross-linking moiety in a side chain and having a glass transition point of 25° C. or lower, wherein both the resin (A) and the resin (B) are a reaction product of a cross-linking agent with a maleic anhydride-modified thermoplastic resin having a melting point of 68° C. to 134° C. and a maleation rate of 0.5 to 2.5% by mass.

Abstract: An information processing device (30) includes a signal acquisition unit (31), a passive depth estimation unit (34), and a fusion unit (35). The signal acquisition unit (31) extracts, from light reception data, active information indicating a flight time of reference light (PL) and passive information (PI) indicating two-dimensional image information of a subject (SU) obtained from ambient light (EL). The passive depth estimation unit (34) generates passive depth information (PDI) based on the passive information (PI). The fusion unit (35) fuses the passive depth information (PDI) with active depth information (ADI) generated based on the active information to generate depth information (DI) of the subject (SU).

Abstract: The purpose of the present invention is to provide an effective therapeutic pharmaceutical composition for treating pancreatic cancer. The problem can be solved by a pharmaceutical composition comprising a fibroblast growth factor receptor 4 inhibitor and a senolytic drug as active ingredients.

Abstract: According to one embodiment, a semiconductor memory device includes a lower layer, a stacked body above the lower layer with first conductive layers and first insulating layers alternately stacked. A pillar penetrates through the stacked body to reach the lower layer. At least one first insulating layer other than the lowest among the first insulating layers in a first region of the stacked body is thicker than first insulating layers in a second region above the first region. The pillar has a first bowing shape at the height of the at least one thicker first insulating layer and a second bowing shape at a height in the second region.

Abstract: A method for manufacturing a semiconductor device includes forming, on a to-be-processed film above an underlying film, a mask material containing a first metal and comprising a first mask layer which is provided on the to-be-processed film and whose content of the first metal is lower than a first predetermined percentage, and a second mask layer which is provided on the first mask layer and whose content of the first metal is equal to or higher than the first predetermined percentage. The manufacturing method includes patterning the mask material. The manufacturing method includes processing the to-be-processed film using the mask material as a mask. The processing of the to-be-processed film includes performing a first treatment to process the to-be-processed film at a first temperature in an atmosphere of a first gas.

Abstract: A plasma processing device includes a chamber, a plurality of direct current power supplies, and a controller. The direct current power supplies are provided in an upper portion and on a side wall of the chamber, wherein the direct current power supplies are configured to operate individually. The controller is configured to control the direct current power supplies such that the direct current power supplies apply respective direct current voltages independent of each other.

Abstract: A method for producing a semiconductor device includes forming, on a substrate, a film to be processed. The method further includes forming, on the film to be processed, a first film containing a metallic element and a second film containing at least one of carbon or boron. The method further includes forming an insulating film on the first and second films. The method further includes processing the film to be processed using the first film, the second film, and the insulating film, as a mask.

Abstract: A semiconductor memory device includes a substrate; a plurality of first conductive layers and first insulating layers stacked in alternation; a first semiconductor layer opposed to first conductive layers and first insulating layers; a second semiconductor layer; a second insulating layer that covers outer peripheral surface of the first semiconductor layer; and a third insulating layer disposed at a position different from first conductive layers, first insulating layers, and the second insulating layer, the third insulating layer having one end in contact with the second semiconductor, the third insulating layer having another end farther from the second semiconductor layer than the second insulating layer. A metal oxide film is disposed on a surface on the third insulating layer side of the second insulating layer. A metal oxide film is absent on a surface on the third insulating layer side of the plurality of first insulating layers.

Abstract: Provided imaging control apparatus effectively avoid image capturing competition in a scene in which a large number of infrared cameras capture images. The imaging control apparatus includes an image acquisition unit that acquires an infrared image generated by an infrared camera imaging reflected light of emitted infrared rays; and a control unit that controls a setting for the generation of the infrared image on the basis of a control parameter transmitted to another apparatus or received from another apparatus via a communication interface.

Abstract: A medical image processing device 3 includes: a captured image acquisition unit 31 that acquires a captured image captured by a medical observation device 2; a determination unit 33 that determines whether or not an imaging field of view of the medical observation device 2 has been moved; and an identification image generation unit 321 that generates, in a case where the determination unit 33 determines that the imaging field of view has been moved, an identification image in which a specific position in a specific region displayed on a display device in an entire image region of the captured image is identifiable with respect to other positions.

Abstract: A rotor includes: a shaft; a tubular rotor core; and a plurality of magnets. The shaft extends along a center axis. The rotor core surrounds the shaft. The plurality of magnets is disposed outside the rotor core in a radial direction and is aligned in a circumferential direction. A plurality of first recessed portions recessed outward in the radial direction is aligned in the circumferential direction in an inner surface of the rotor core in the radial direction. Each of the first recessed portions overlaps each of the magnets in the radial direction.

Abstract: In one embodiment, a method of manufacturing a semiconductor device includes etching a film with etching gas that includes a chain hydrocarbon compound expressed as CxHyFz where C, H and F respectively denote carbon, hydrogen and fluorine, “x” denotes an integer of three or more, and “y” and “z” respectively denote integers of one or more. Furthermore, the CxHyFz is the chain hydrocarbon compound in which each of terminal carbon atoms on a carbon chain of the chain hydrocarbon compound is bonded only to fluorine atoms out of hydrogen and fluorine atoms.

Abstract: An information processing apparatus (1) according to the present disclosure includes an estimation unit (first MV estimation unit 3 and second MV estimation unit 4) and a correction unit (high-precision restoration unit 7). The estimation unit (first MV estimation unit 3 and second MV estimation unit 4) estimates a motion vector of a distance measurement target based on distance information on a distance to the distance measurement target input from a distance measuring device that measures the distance to the distance measurement target and motion information of the distance measuring device input from a motion detection device that detects a motion of the distance measuring device. The correction unit (high-precision restoration unit 7) corrects the distance information based on the motion vector of the distance measurement target estimated by the estimation unit (first MV estimation unit 3 and second MV estimation unit 4).

Abstract: An etching method according to one embodiment, includes alternately switching a first step and a second step. The first step introduces a first gas containing a fluorine atom without supplying radiofrequency voltage to form a surface layer on a surface of a target cooled at a temperature equal to or lower than a liquefaction temperature of the first gas. The second step introduces a second gas gaseous at the first temperature and different from the first gas, and supplies the radiofrequency voltage, to generate plasma from the second gas to etch the target by sputtering using the plasma.

Abstract: An etching method according to one embodiment, includes alternately switching a first step and a second step. The first step introduces a first gas containing a fluorine atom without supplying radiofrequency voltage to form a surface layer on a surface of a target cooled at a temperature equal to or lower than a liquefaction temperature of the first gas. The second step introduces a second gas gaseous at the first temperature and different from the first gas, and supplies the radiofrequency voltage, to generate plasma from the second gas to etch the target by sputtering using the plasma.

Abstract: A generation unit that generates an output image by correcting a first image based on deterioration of the first image due to a substance generated during surgery estimated based on the first image that is an image regarding surgery and a second image that is an image prior to the first image is included.

Abstract: A method of manufacturing a semiconductor device includes: preparing a stepped structure being arranged on a substrate, the stepped structure including a first region and a second region, a height of the stepped structure of the second region being lower than a height of the stepped structure of the first region; and etching the first region and the second region of the stepped structure by irradiating the first region and the second region with an ion beam, an irradiation amount of the ion beam irradiating the first region is larger than an irradiation amount of the ion beam irradiating the second region.