Abstract: An etching method according to one embodiment, includes alternately switching a first step and a second step. The first step introduces a first gas containing a fluorine atom without supplying radiofrequency voltage to form a surface layer on a surface of a target cooled at a temperature equal to or lower than a liquefaction temperature of the first gas. The second step introduces a second gas gaseous at the first temperature and different from the first gas, and supplies the radiofrequency voltage, to generate plasma from the second gas to etch the target by sputtering using the plasma.

Abstract: There is provided an image processing device to which a visible light image and an infrared ray image are input, the visible light image having been obtained corresponding to irradiation of a visible light in a second direction, the infrared ray image having been obtained corresponding to irradiation of an infrared ray in a first direction, which is a direction having an irradiation range larger than an irradiation range of the second direction, and which synthesizes the infrared ray image and the visible light image to generate a color image.

Abstract: A manufacturing method of a semiconductor device includes etching a film using etching gas that has a first or second molecule which has a C3F4 group and in which the number of carbon atoms is four or five. Further, the first molecule has an R1 group that bonds to a carbon atom in the C3F4 group through a double bond, and the R1 group contains carbon and also chlorine, bromine, iodine, or oxygen. Further, the second molecule has an R2 group that bonds to a carbon atom in the C3F4 group through a single bond and an R3 group that bonds to the carbon atom in the C3F4 group through a single bond, the R2 group or the R3 group or both containing carbon, and both the R2 group and the R3 group containing hydrogen, fluorine, chlorine, bromine, iodine, or oxygen.

Abstract: An image processing apparatus includes a first combination unit that receives a far-infrared image and multiple reference images obtained by capturing the same object as that of the far-infrared image and generates a first composite signal which is a composite signal of the multiple reference images and a second combination unit that combines the far-infrared image and the first composite signal to generate a quality-improved image of the far-infrared image. The first combination unit generates the first composite signal on the basis of a visible image-far-infrared image correlation amount and a near-infrared image-far-infrared image correlation amount. The first combination unit sets a contribution ratio of a reference image, which has a larger amount of correlation with the far-infrared image, of the two reference images, that is, the visible image and the near-infrared image to a large value and generates the first composite signal.

Abstract: The present disclosure relates to an image processing device, an image processing method, and a program that can make it easier to check a surrounding situation. A viewpoint determination part determines a viewpoint of a viewpoint image related to periphery of a moving object in a case where the moving object is viewed from a predetermined viewpoint, according to a speed of a vehicle that can move at an arbitrary speed. Then, an image synthesis part synthesizes an illustrative image of the vehicle at a position where the vehicle can exist in the captured image of the periphery of the vehicle, and a projection conversion part performs projection conversion on an image obtained by the image synthesis part synthesizing the illustrative image of the vehicle to generate the viewpoint image that is a view from the viewpoint determined by the viewpoint determination part. The present technology can be applied to, for example, an image processing device mounted on a vehicle.

Abstract: The present disclosure minimizes the degradation of image quality when an active image and a passive image are combined. The present disclosure provides an image processing apparatus that includes a correlation amount calculation section and a combination section. The correlation amount calculation section calculates the amount of correlation between the luminance of an active image captured by irradiating light and the luminance of a passive image captured without irradiating light. The combination section combines the luminance of the active image with the luminance of the passive image in accordance with the calculated amount of correlation. The above configuration minimizes the degradation of image quality when the active image and the passive image are combined.

Abstract: A manufacturing method of a semiconductor device includes etching a film using etching gas that has a first or second molecule which has a C3F4 group and in which the number of carbon atoms is four or five. Further, the first molecule has an R1 group that bonds to a carbon atom in the C3F4 group through a double bond, and the R1 group contains carbon and also chlorine, bromine, iodine, or oxygen. Further, the second molecule has an R2 group that bonds to a carbon atom in the C3F4 group through a single bond and an R3 group that bonds to the carbon atom in the C3F4 group through a single bond, the R2 group or the R3 group or both containing carbon, and both the R2 group and the R3 group containing hydrogen, fluorine, chlorine, bromine, iodine, or oxygen.

Abstract: An image processing apparatus includes circuitry configured to: set a luminance adjustment mode to one of a first luminance adjustment mode that performs luminance adjustment with preset sensitivity and a second luminance adjustment mode that has sensitivity of the luminance adjustment lower than the sensitivity of the first luminance adjustment mode and suppresses luminance of a high luminance region based on an observation state of an imager configured to capture a target; and perform the luminance adjustment in the set luminance adjustment mode.

Abstract: A method of manufacturing a semiconductor device includes forming a mask layer including aluminum or an aluminum compound on a layer to be etched comprising at least one first metal selected from tungsten, tantalum, zirconium, hafnium, molybdenum, niobium, ruthenium, osmium, rhenium, and iridium. The method of manufacturing a semiconductor device further includes patterning the mask layer, and etching the layer to be etched by using the patterned mask layer to form a hole or a groove in the layer to be etched.

Abstract: According to one embodiment, the stacked body includes a plurality of stacked units and a first intermediate layer. Each of the stacked units includes a plurality of electrode layers and a plurality of insulating layers. Each of the insulating layers is provided between the electrode layers. The first intermediate layer is provided between the stacked units. The first intermediate layer is made of a material different from the electrode layers and the insulating layers. The plurality of columnar portions includes a channel body extending in a stacking direction of the stacked body to pierce the stacked body, and a charge storage film provided between the channel body and the electrode layers.

Abstract: Provided is an image processing device including an infrared image acquisition unit that acquires an infrared image of an imaged object, a visible light image acquisition unit that acquires a visible light image of the imaged object, a generation unit that generates cutaneous sensation control parameters on the basis of the infrared image acquired by the infrared image acquisition unit, and a data processing unit that associates the visible light image acquired by the visible light image acquisition unit with the cutaneous sensation control parameters generated by the generation unit.

Abstract: A semiconductor device of an embodiment includes a control circuit arranged on a substrate, a first conductive layer arranged on the control circuit and containing a first element as a main component, a multilayer structure arranged on the first conductive layer and configured such that multiple second conductive layers and multiple insulating layers are alternately stacked on each other, a memory layer penetrating the multilayer structure and reaching the first conductive layer at a bottom portion, a first layer arranged between the control circuit and the first conductive layer and containing the first element as a main component, and a second layer arranged between the control circuit and the first layer and containing, as a main component, a second element different from the first element.

Abstract: The present invention describes a hardware security module (HSM) used for storing cryptographic objects with native implementation of a communication protocol used in diverse cryptographic key management interfaces. This configuration enables the HSM to establish secure communication directly with the user, dispensing with the use of intermediate servers, which allows additional security in the virtual provision of HSM services and secure code execution. A confidence enhancement method is also described, for the authorization of operations by entities or paper operations in an HSM with two or more authentication factors, via a remote connection, such as to guarantee access to the objects of the same user which are protected by the HSM.

Abstract: According to one embodiment, the stacked body includes a plurality of stacked units and a first intermediate layer. Each of the stacked units includes a plurality of electrode layers and a plurality of insulating layers. Each of the insulating layers is provided between the electrode layers. The first intermediate layer is provided between the stacked units. The first intermediate layer is made of a material different from the electrode layers and the insulating layers. The plurality of columnar portions includes a channel body extending in a stacking direction of the stacked body to pierce the stacked body, and a charge storage film provided between the channel body and the electrode layers.

Abstract: Provided imaging control apparatus effectively avoid image capturing competition in a scene in which a large number of infrared cameras capture images. The imaging control apparatus includes an image acquisition unit that acquires an infrared image generated by an infrared camera imaging reflected light of emitted infrared rays; and a control unit that controls a setting for the generation of the infrared image on the basis of a control parameter transmitted to another apparatus or received from another apparatus via a communication interface.

Abstract: An imaging control apparatus configured to effectively avoid image capturing competition in a scene in which a large number of infrared cameras capture images. The imaging control apparatus includes an image acquisition unit that acquires an infrared image generated by an infrared camera imaging reflected light of emitted infrared rays, and a control unit that controls a setting for the generation of the infrared image on the basis of a control parameter transmitted to another apparatus or received from another apparatus via a communication interface.

Abstract: A manufacturing method of a semiconductor device includes etching a film using etching gas that has a first or second molecule which has a C3F4 group and in which the number of carbon atoms is four or five. Further, the first molecule has an R1 group that bonds to a carbon atom in the C3F4 group through a double bond, and the R1 group contains carbon and also chlorine, bromine, iodine, or oxygen. Further, the second molecule has an R2 group that bonds to a carbon atom in the C3F4 group through a single bond and an R3 group that bonds to the carbon atom in the C3F4 group through a single bond, the R2 group or the R3 group or both containing carbon, and both the R2 group and the R3 group containing hydrogen, fluorine, chlorine, bromine, iodine, or oxygen.

Abstract: Provided are an apparatus and a method that perform a process of improving the quality of a far-infrared image. An image processing apparatus includes: a first combination unit that receives a far-infrared image and multiple reference images obtained by capturing the same object as that of the far-infrared image and generates a first composite signal which is a composite signal of the multiple reference images; and a second combination unit that performs a process of combining the far-infrared image and the first composite signal to generate a quality-improved image of the far-infrared image. The reference images are, for example, a visible image and a near-infrared image. The first combination unit generates the first composite signal on the basis of a visible image-far-infrared image correlation amount and a near-infrared image-far-infrared image correlation amount.

Abstract: In one embodiment, a method of manufacturing a semiconductor device includes forming a stacked body that alternately includes a plurality of first films and a plurality of second films on a substrate. The method further includes performing a first process of forming N2 holes having N kinds of depths in the stacked body where N is an integer of three or more. The method further includes performing a second process of processing the N2 holes so as to have N2 kinds of depths after performing the first process.

Abstract: The present disclosure minimizes the degradation of image quality when an active image and a passive image are combined. The present disclosure provides an image processing apparatus that includes a correlation amount calculation section and a combination section. The correlation amount calculation section calculates the amount of correlation between the luminance of an active image captured by irradiating light and the luminance of a passive image captured without irradiating light. The combination section combines the luminance of the active image with the luminance of the passive image in accordance with the calculated amount of correlation. The above configuration minimizes the degradation of image quality when the active image and the passive image are combined.