Abstract: A method of manufacturing a semiconductor device includes: preparing a stacked body in which a first layer, a second layer, a third layer, and a fourth layer are stacked in this order on a semiconductor substrate in a first direction, the stacked body including a first region and a second region different from the first region; etching the fourth layer in the first region and the second region to expose the third layer by irradiating the first region and the second region with an ion beam, and etching the third layer and the second layer in the second region to expose the first layer by irradiating the second regions with an ion beam in a state where the third layer is exposed in the first region.

Abstract: A drive device includes a motor having a motor shaft, an output part outputting a rotational force to the outside, a gear part transmitting the rotational force of the motor shaft to the output part, and a housing having an internal space in which the motor, a portion of the output part, and the gear part are accommodated. The housing includes a support member of which at least a portion is disposed in the internal space. The gear part includes at least one gear shaft rotatably supported by the housing via two bearing parts disposed away from each other in an axial direction. The at least one gear shaft is rotatably supported by the support member via the bearing part on one side in the axial direction.

Abstract: A drive device includes a motor, an output part outputting torque to the outside, a gear part transmitting torque of the motor to the output part, and a housing having an internal space. The gear part includes at least one gear shaft extending in an axial direction, to which at least one gear is fixed, and a gear case accommodating the gear. The gear case includes a wall part facing an outer circumferential surface of the accommodated gear in a radial direction and extending in a circumferential direction and an opening adjacent to the wall part in the circumferential direction and penetrating in the radial direction. The opening faces the housing in the radial direction, and in a rotation direction of the gear, the wall part includes a front end disposed on a front side of the opening and adjacent to the opening. The front end contacts the housing.

Abstract: A rotor includes a shaft, a cylindrical rotor core, a connector, magnets and a cover. The shaft extends along a central axis. The rotor core surrounds the shaft. The connector is provided radially inside the rotor core and connects the rotor core and the shaft. The magnets are provided radially outside the rotor core along a circumferential direction. The cover is provided radially outside the magnets. The connector includes a cylindrical body surrounding the shaft and a flange. The flange extends radially outward from one axial end of the body and faces the magnets in the axial direction. The cover includes a peripheral surface and an eave. The peripheral surface faces the magnets in a radial direction. The eave extends radially inward from an other axial end of the peripheral surface and faces the magnets in the axial direction.

Abstract: A rotor includes: a shaft; a tubular rotor core; and a plurality of magnets. The shaft extends along a center axis. The rotor core surrounds the shaft. The plurality of magnets is disposed outside the rotor core in a radial direction and is aligned in a circumferential direction. A plurality of first recessed portions recessed outward in the radial direction is aligned in the circumferential direction in an inner surface of the rotor core in the radial direction. Each of the first recessed portions overlaps each of the magnets in the radial direction.

Abstract: There is provided an image processing device to which a visible light image and an infrared ray image are input, the visible light image having been obtained corresponding to irradiation of a visible light in a second direction, the infrared ray image having been obtained corresponding to irradiation of an infrared ray in a first direction, which is a direction having an irradiation range larger than an irradiation range of the second direction, and which synthesizes the infrared ray image and the visible light image to generate a color image.

Abstract: A manufacturing method of a semiconductor device includes etching a film using etching gas that has a first or second molecule which has a C3F4 group and in which the number of carbon atoms is four or five. Further, the first molecule has an R1 group that bonds to a carbon atom in the C3F4 group through a double bond, and the R1 group contains carbon and also chlorine, bromine, iodine, or oxygen. Further, the second molecule has an R2 group that bonds to a carbon atom in the C3F4 group through a single bond and an R3 group that bonds to the carbon atom in the C3F4 group through a single bond, the R2 group or the R3 group or both containing carbon, and both the R2 group and the R3 group containing hydrogen, fluorine, chlorine, bromine, iodine, or oxygen.

Abstract: According to one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a substrate. The method further includes forming a second film on the first film. The method further includes forming a recess in the first film using the second film as a mask. The second film includes a first layer having carbon and a second layer having carbon formed on the first layer. The second layer has a second carbon density lower than a first carbon density of the first layer.

Abstract: An image processing apparatus includes circuitry configured to: set a luminance adjustment mode to one of a first luminance adjustment mode that performs luminance adjustment with preset sensitivity and a second luminance adjustment mode that has sensitivity of the luminance adjustment lower than the sensitivity of the first luminance adjustment mode and suppresses luminance of a high luminance region based on an observation state of an imager configured to capture a target; and perform the luminance adjustment in the set luminance adjustment mode.

Abstract: An information processing device according to the present disclosure includes an inference unit that infers, on the basis of a result of checking a first image against a plurality of images taken in the past, a third image that is an image taken in the past at a position corresponding to a second image to be taken at a next timing of the first image, and a generation unit that generates a fourth image that is an image obtained by correcting the second image on the basis of the third image in a case where the second image is acquired.

Abstract: A semiconductor memory device includes a substrate; a plurality of first conductive layers and first insulating layers stacked in alternation; a first semiconductor layer opposed to first conductive layers and first insulating layers; a second semiconductor layer; a second insulating layer that covers outer peripheral surface of the first semiconductor layer; and a third insulating layer disposed at a position different from first conductive layers, first insulating layers, and the second insulating layer, the third insulating layer having one end in contact with the second semiconductor, the third insulating layer having another end farther from the second semiconductor layer than the second insulating layer. A metal oxide film is disposed on a surface on the third insulating layer side of the second insulating layer. A metal oxide film is absent on a surface on the third insulating layer side of the plurality of first insulating layers.

Abstract: A first motion vector detection unit 50-1 detects a motion vector on the basis of self-motion data Dm of a sensor unit 15 and depth image data S which is generated by the sensor unit 15 and of which the definition is enhanced by a depth processing unit 30. A second motion vector detection unit 60 detects a motion vector on the basis of captured image data Isp detected by the sensor unit 15. A motion vector detection and merging unit 70 merges the motion vector detected by the first motion vector detection unit 50-1 with the motion vector detected by the second motion vector detection unit 60. Even in a case where it is difficult to detect a motion vector on the basis of captured image data owing to the presence of a flat portion or a dark portion in an image, it is possible to accurately detect a motion vector on the basis of the self-motion data Dm and the depth image data S.

Abstract: A method for producing a semiconductor device includes forming, on a substrate, a film to be processed. The method further includes forming, on the film to be processed, a first film containing a metallic element and a second film containing at least one of carbon or boron. The method further includes forming an insulating film on the first and second films. The method further includes processing the film to be processed using the first film, the second film, and the insulating film, as a mask.

Abstract: A film processing method includes forming a target film, the target film having an upper surface. The method includes forming a carbon film on the upper surface of the target film. The method includes performing a first etching to format least one recess in the target film, with the carbon film serving as a mask. The method includes performing a second etching, by directing an ion beam through the at least one recess, to increase a depth of the at least one recess.

Abstract: According to one embodiment, the stacked body includes a plurality of stacked units and a first intermediate layer. Each of the stacked units includes a plurality of electrode layers and a plurality of insulating layers. Each of the insulating layers is provided between the electrode layers. The first intermediate layer is provided between the stacked units. The first intermediate layer is made of a material different from the electrode layers and the insulating layers. The plurality of columnar portions includes a channel body extending in a stacking direction of the stacked body to pierce the stacked body, and a charge storage film provided between the channel body and the electrode layers.

Abstract: In one embodiment, a method of manufacturing a semiconductor device includes etching a film with etching gas that includes a chain hydrocarbon compound expressed as CxHyFz where C, H and F respectively denote carbon, hydrogen and fluorine, “x” denotes an integer of three or more, and “y” and “z” respectively denote integers of one or more. Furthermore, the CxHyFz is the chain hydrocarbon compound in which each of terminal carbon atoms on a carbon chain of the chain hydrocarbon compound is bonded only to fluorine atoms out of hydrogen and fluorine atoms.

Abstract: According to one embodiment, the stacked body includes a plurality of stacked units and a first intermediate layer. Each of the stacked units includes a plurality of electrode layers and a plurality of insulating layers. Each of the insulating layers is provided between the electrode layers. The first intermediate layer is provided between the stacked units. The first intermediate layer is made of a material different from the electrode layers and the insulating layers. The plurality of columnar portions includes a channel body extending in a stacking direction of the stacked body to pierce the stacked body, and a charge storage film provided between the channel body and the electrode layers.

Abstract: A medical electronic apparatus includes: a casing including a lid portion provided with: a first inlet duct; a second inlet duct; and an outlet duct, the lid portion being configured to open the second inlet duct when the first inlet duct is blocked; a detection unit configured to detect an open/close state of the lid portion; and an output unit configured to output information regarding blockage of the first inlet duct based on a detection result of the detection unit.

Abstract: According to one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a substrate. The method further includes forming a second film on the first film. The method further includes forming a recess in the first film using the second film as a mask. The second film includes a first layer having carbon and a second layer having carbon formed on the first layer. The second layer has a second carbon density lower than a first carbon density of the first layer.

Abstract: A semiconductor device of an embodiment includes a control circuit arranged on a substrate, a first conductive layer arranged on the control circuit and containing a first element as a main component, a multilayer structure arranged on the first conductive layer and configured such that multiple second conductive layers and multiple insulating layers are alternately stacked on each other, a memory layer penetrating the multilayer structure and reaching the first conductive layer at a bottom portion, a first layer arranged between the control circuit and the first conductive layer and containing the first element as a main component, and a second layer arranged between the control circuit and the first layer and containing, as a main component, a second element different from the first element.