Abstract: The disclosure provides a local stretch packaging structure, including a substrate, a flexible electronic element, a plurality of light-emitting display elements, and a packaging layer. The flexible electronic element is disposed on the substrate. These light-emitting display elements are disposed on the flexible electronic element. The packaging layer includes a packaging area and a non-packaging area. The packaging area covers the upper surface and sidewalls of these light-emitting display elements. The non-packaging area is directly covered the flexible electronic element that is not disposed with these light-emitting display elements.

Abstract: A composition and a manufacturing method of a highly flame-retardant and low-smoke injection-molded polyvinyl chloride pipe are provided. The composition includes a polyvinyl chloride resin material, a chlorinated polyvinyl chloride resin material, a flame retardant additive and a carbon forming additive. A first number-average degree of polymerization (DPn) of the polyvinyl chloride resin material is between 600 and 1,000. A second number-average degree of polymerization of the chlorinated polyvinyl chloride resin material is between 600 and 800. A difference between the first number-average degree of polymerization and the second number-average degree of polymerization is within 400. The flame retardant additive is a phosphorus-containing flame retardant modified by a modifier. A total added amount of the flame retardant additive and the carbon forming additive in the composition is not greater than 3 PHR.

Abstract: A chlorinated polyvinyl chloride resin composition, an extruded sheet and a method for manufacturing the same are provided. The chlorinated polyvinyl chloride resin composition includes a chlorinated polyvinyl chloride resin and a plasticizing processing aid. The chlorinated polyvinyl chloride resin has an amount of 80 parts by weight to 120 parts by weight, a degree of polymerization of from 500 to 1,100, and a chlorine content of from 60% to 75%. The plasticizing processing aid includes a vinyl chloride graft copolymer and an acrylic compound. A grafted functional group of the vinyl chloride graft copolymer is at least one of polyol ester and ethylene vinyl acetate.

Abstract: A PVC resin composition and a method for manufacturing a pipe having high heat resistance and transparency are provided. The PVC resin composition includes 100 phr of a PVC resin, 0.5 phr to 5 phr of a modifier, and 1 phr to 10 phr of a heat resistance improving agent. A degree of polymerization of the PVC resin is from 800 to 1,350. The modifier is a polymer containing a first monomer and a second monomer. The first monomer is ethylene or a derivative of the ethylene, and the second monomer is a polyester.

Abstract: A composition and a manufacturing method of a highly flame-retardant and low-smoke extruded polyvinyl chloride pipe are provided. The composition includes a polyvinyl chloride resin material, a flame retardant additive and a carbon forming additive. The polyvinyl chloride resin material is in an amount between 10 PHR (parts per hundred resin) and 90 PHR. The flame retardant additive is in an amount between 0.5 PHR and 2.0 PHR, and is a phosphorus-containing flame retardant modified by a modifier. The carbon forming additive is in an amount between 0.2 PHR and 1.0 PHR. The carbon forming additive is at least one material selected from a group consisting of zinc chloride, zinc stearate, calcium stearate, zinc hydroxystannate, anhydrous zinc stannate, zinc phosphate and zirconium phosphate. A total added amount of the flame retardant additive and the carbon forming additive in the composition is not greater than 3 PHR.

Abstract: A semiconductor device includes a substrate, an initial layer, and a superlattice stack. The initial layer is located on the substrate and includes aluminum nitride (AlN). The superlattice stack is located on the initial layer and includes a plurality of first films, a plurality of second films and at least one doped layer, and the first films and the second films are alternately stacked on the initial layer, wherein the at least one doped layer is arranged in one of the first films and the second films, and dopants of the at least one doped layer are selected from a group consisting of carbon, iron, and the combination thereof.

Abstract: A material analysis method is provided. A plurality of wafers processed from a plurality of ingots are measured by a measuring instrument to obtain an average of a bow of each of the wafers processed from the ingots and a plurality of full widths at half maximum (FWHM) of each of the wafers. Key factors respectively corresponding to the ingots are calculated according to the FWHM of the wafers. A regression equation is obtained according to the key factors and the average of the bows.

Abstract: A method for producing Si ingot single crystal by NOC growth method including a Si ingot single crystal growing step and a continuous growing step is provided. The growing step includes providing a low temperature region in the Si melt where the Si ingot single crystal is grown along the surface of the Si melt or toward the inside of the Si melt, and the Si ingot single crystal has distribution of a vacancy concentration and an interstitial concentration in which respectively a vacancy concentration and an interstitial concentration vary with a distance from the growth interface; and adjusting a temperature gradient and a growth rate in the Si melt, so that along with the increasing of the distance from the growth interface, the vacancy concentration and the interstitial concentration in the Si ingot single crystal respectively decrease come near to each other.

Abstract: A method for producing Si ingot single crystal by NOC growth method including a Si ingot single crystal growing step and a continuous growing step is provided. The growing step includes providing a low temperature region in the Si melt where the Si ingot single crystal is grown along the surface of the Si melt or toward the inside of the Si melt, and the Si ingot single crystal has distribution of a vacancy concentration and an interstitial concentration in which respectively a vacancy concentration and an interstitial concentration vary with a distance from the growth interface; and adjusting a temperature gradient and a growth rate in the Si melt, so that along with the increasing of the distance from the growth interface, the vacancy concentration and the interstitial concentration in the Si ingot single crystal respectively decrease come near to each other.

Abstract: A wafer and a wafer processing method are included. The wafer processing method includes the following steps. A wafer is provided having a first surface and a second surface opposite to the first surface. A fixture pattern is pasted on the first surface to cover a first portion of the first surface of the wafer, and a second portion of the first surface is exposed by the fixture pattern. A first etching step is performed on the second portion of the first surface to form a first etching pattern on the first surface of the wafer. The fixture pattern is removed from the first surface, and the second surface of the wafer is ground.

Abstract: A mono-crystalline silicon growth apparatus is provided. The mono-crystalline silicon growth apparatus includes a furnace, a support base disposed in the furnace, a crucible disposed on the support base, and a heating module. The support base and the crucible do not rotate relative to the heating module, and an axial direction is defined to be along a central axis of the crucible. The heating module is disposed at an outer periphery of the support base and includes a first heating unit, a second heating unit, and a third heating unit. The first heating unit, the second heating unit, and the third heating unit are respectively disposed at positions with different heights corresponding to the axial direction.

Abstract: A heterostructure, includes: a substrate; and a buffer layer that includes a plurality of layers having a composition AlxInyGa1-x-yN, where x?1 and y?0; wherein the buffer layer has a first region that includes at least two layers, a second region that includes at least two layers, and a third region that includes at least two layers.

Abstract: A heterostructure, includes: a substrate; and a buffer layer that includes a plurality of layers having a composition AlxInyGa1-x-yN, where x?1 and y?0; wherein the buffer layer has a first region that includes at least two layers, a second region that includes at least two layers, and a third region that includes at least two layers.

Abstract: A method of manufacturing an epitaxy substrate is provided. A handle substrate is provided. A beveling treatment is performed on an edge of a device substrate such that a bevel is formed at the edge of the device substrate, wherein a thickness of the device substrate is greater than 100 ?m and less than 200 ?m. An ion implantation process is performed on a first surface of the device substrate to form an implantation region within the first surface. A second surface of the device substrate is bonded to the handle substrate for forming the epitaxy substrate, wherein a bonding angle greater than 90° is provided between the bevel of the device substrate and the handle substrate, and a projection length of the bevel toward the handle substrate is between 600 ?m and 800 ?m.

Abstract: A method for producing Si ingot single crystal including a Si ingot single crystal growing step, a temperature gradient controlling step and a continuous growing step is provided. In the growing step, the Si ingot single crystal is grown in silicon melt in crucible, and the growing step includes providing a low-temperature region in the Si melt and providing a silicon seed to contact the melt surface of the silicon melt to start crystal growth, and silicon single crystal grows along the melt surface of the silicon melt and toward the inside of the silicon melt. In the temperature gradient controlling step, the under-surface temperature gradient of the silicon single crystal is G1, the above-surface temperature gradient of the silicon single crystal is G2, G1 and G2 satisfy: G2/G1<6. The step of controlling the temperature gradient of silicon single crystal is repeated to obtain the Si ingot single crystal.

Abstract: Provided is a method of SiC wafer processing, and the method includes the following steps. A SiC wafer is provided, and the SiC wafer has a first surface and an opposing second surface. A fine grinding process is performed on the first surface and the second surface of the SiC wafer. A dry etching process is performed on the first surface and the second surface of the SiC wafer to make the roughness of the first surface and the second surface 2.5 nm or less. After the dry etching process, a polishing process is performed on the first surface and the second surface of the SiC wafer.

Abstract: An epitaxy substrate and a method of manufacturing the same are provided. The epitaxy substrate includes a silicon substrate and a silicon carbide layer. The silicon substrate has a first surface and a second surface opposite to each other, and the first surface is an epitaxy surface. The silicon carbide layer is located in the silicon substrate, and a distance between the silicon carbide layer and the first surface is between 100 angstroms (?) and 500 angstroms.

Abstract: A material analysis method is provided. A plurality of wafers processed from a plurality of ingots are measured by a measuring instrument to obtain an average of a bow of each of the wafers processed from the ingots and a plurality of full widths at half maximum (FWHM) of each of the wafers. Key factors respectively corresponding to the ingots are calculated according to the FWHM of the wafers. A regression equation is obtained according to the key factors and the average of the bows.

Abstract: A mono-crystalline silicon growth method includes: providing a furnace, a supporting base and a crucible which do not rotate relative to the furnace, and a heating module disposed at an outer periphery of the supporting base. After solidifying a liquid surface of a silicon melt in the crucible to form a crystal, the heating power of the heating module is successively reduced to appropriately adjust the temperature around the crucible to effectively control a temperature gradient of a thermal field around the crucible, so as to form a mono-crystalline silicon ingot by solidifying the silicon melt.

Abstract: A mono-crystalline silicon growth apparatus includes a furnace, a support base, a crucible, a heating module disposed outside of the crucible, and a heat adjusting module above the crucible. The heat adjusting module includes a diversion tube, a plurality of heat preservation sheets, and a hard shaft. The diversion tube includes a tube body and a carrying body connected to the tube body. The heat preservation sheets are sleeved around the tube body and are stacked and disposed on the carrying body. The hard shaft passes through the tube body and does not rotate. The hard shaft includes a water flow channel disposed therein and a clamping portion configured to clamp a seed crystal. Therefore, a fluid injected into the water flow channel takes away the heat near the clamping portion. A heat adjusting module and a hard shaft of the mono-crystalline silicon growth apparatus are provided.