Abstract: A modified susceptor for use in an epitaxial deposition apparatus and process is disclosed. The modified susceptor has an inner annular ledge capable of supporting a semiconductor wafer and has a plurality of holes in the surface to allow cleaning gas utilized during an epitaxial deposition process to pass through the susceptor and contact substantially the entire back surface of the semiconductor wafer and remove a native oxide layer. Also, the plurality of holes on the susceptor allows dopant atoms out-diffused from the back surface during the epitaxial deposition process to be carried away from the front surface in an inert gas stream and into the exhaust such that autodoping of the front surface is minimized.

Abstract: The method of heat-treating a fluoride crystal according to the present invention comprises introducing an inert gas and/or a fluorine-based gas into a heat-treating furnace in which a fluoride crystal is placed through a gas-feeding port, and heating the fluoride crystal in the atmosphere of the gas having a pressure not lower than atmospheric pressure, thereby making it possible to prevent turbidity and coloration generated in the fluoride crystal due to oxygen and metal impurities adsorbed by the surface of the fluoride crystal.

Abstract: Chemical vapour deposition epitaxial reactor comprising two reaction chambers, each provided with a susceptor, enclosed in a bell jar, to be induction heated by an induction coil supplied by a medium frequency AC generator, and generator means for providing a medium frequency power supply to the two induction coils of both the reaction chambers, wherein the means for power supplying the two induction coils are alternatively actuated, so that when one of the reaction chambers is heated the other one is purged, loaded and/or unloaded, providing however a time overlap of 1 to 10 minutes between the heating times of the two processes. A computerized controller provides to control the medium frequency generators in accordance with a dedicated software for providing an actuating method to the specific reactor.

Abstract: A protein crystal growth assembly including a crystal growth cell and further including a cell body having a top side and a bottom side and a first aperture defined therethrough, the cell body having opposing first and second sides and a second aperture defined therethrough. A cell barrel is disposed within the cell body, the cell barrel defining a cavity alignable with the first aperture of the cell body, the cell barrel being rotatable within the second aperture. A reservoir is coupled to the bottom side of the cell body and a cap having a top side is disposed on the top side of the cell body.

Abstract: A device for the sublimation growth of an SiC single crystal, with foil-lined crucible. The device for producing an SiC single crystal includes a crucible with a crucible inner zone. Inside this zone, there is a storage area for storing a stock of solid SiC and a crystal area in which an SiC single crystal grows onto an SiC seed crystal. A heater device is arranged outside the crucible. On a side that faces the crucible inner zone, the crucible is lined with a foil of tantalum, tungsten, niobium, molybdenum, rhenium, iridium, ruthenium, hafnium or zirconium. As a result, the crucible is sealed and a reaction between the aggressive components of the SiC gas phase and the crucible wall is prevented.

Abstract: Prior to housing the crucible in the bowl, a consumable buffer ply is applied over at least a portion of the inside face of the bowl, the ply being constituted essentially by a non-rigid carbon fiber fabric for protecting the bowl from both physical and chemical interactions with the crucible. The buffer ply is essentially constituted by a flexible fabric selected from: a woven cloth, a knit, a multidirectional sheet, and a thin felt. Prior to putting the ply into place in the bowl, it is possible to form a thin deposit of pyrolytic carbon on the fibers of the fabric.

Abstract: This invention concerns a method for coating the inner surfaces of equipment with a layer of material. According to the invention, of the inner space of the equipment limited by the surfaces to be coated is at least partly closed, to said inner space pulses of at least two different reagents in gaseous phase are fed alternately and repeatedly and a layer of material is grown on the surfaces of the inner space according to ALE-technique by exposing the surfaces to the alternating surface reactions of the reagents. With the aid of the invention it is possible to coat pipes and tanks of desired size without using a separate growing equipment.

Abstract: An apparatus for producing a polycrystalline silicon sheet includes a crucible, a heating unit for heating a starting material of silicon fed in the crucible, and a cooling unit for contacting a melt of the starting material melted by heating to a cooling face of a cooling member, thereby obtaining a polycrystalline silicon sheet in which crystals of silicon are grown, wherein the cooling face of the cooling member has a sheet adhering portion for providing a silicon starting point of crystallization and allowing adhesion of the polycrystalline silicon sheet of grown crystals and a sheet stripping portion for allowing easy stripping of the polycrystalline silicon sheet.

Abstract: An apparatus and method are provided for forming a denuded zone and an epitaxial layer on a semiconductor wafer used in manufacturing electronic components. The denuded zone and epitaxial layer are formed in one chamber. The apparatus includes a plurality of upstanding pins immovably mounted on a susceptor and maintain a semiconductor wafer spaced from the susceptor during both application of the epitaxial layer and formation of the denuded zone. Fast cooling of the wafer is accomplished by having the wafer out of conductive heat transfer relation with the susceptor during cooling thereof.

Abstract: A device for promoting protein crystal growth (PCG) using microfluidic channels. A protein sample and a solvent solution are combined within a microfluidic channel having laminar flow characteristics which forms diffusion zones, providing for a well defined crystallization. Protein crystals can then be harvested from the device. The device is particularly suited for microgravity conditions.

Abstract: A crystal growth vessel for growing a crystal within a main container has a crystal growth starting portion in which the crystal starts to grow, whereas the crystal growth starting portion is formed from a material having a thermal conductivity higher than that of a material of the main container.

Abstract: A fully automated, high output robotic station for the crystallization of proteins and other biopolymers via the sitting drop vapor diffusion and micro-batch methods. This station performs microplate feeding, liquid aspiration, dilution, and dispensing, as well as microplate sealing and storage into a temperature controlled hotel. All functions are microprocessor controlled. The operator designs the process via graphical user interface, after which the station executes the process automatically to completion.

Abstract: The Group III-V compound semiconductor manufacturing method which pertains to the present invention is a semiconductor manufacturing method employing epitaxy which comprises (a) a step in which growing areas are produced using a mask patterned on a substrate surface and (b) a step in which a Group III-V compound semiconductor layer is grown in the growing areas while forming facet structures.

Abstract: An apparatus comprises an Si-disposing section in which solid Si is disposed; a seed-crystal-disposing section in which a seed crystal of SiC is disposed; a synthesis vessel adapted to accommodate the Si-disposing section, the seed-crystal-disposing section, and carbon; heating means adapted to heat the Si-disposing section and the seed-crystal-disposing section; and a control section for transmitting to the heating means a command for heating the Si to an evaporation temperature of Si or higher and heating the seed crystal to a temperature higher than that of Si; wherein the Si evaporated by the heating means is adapted to reach the seed-crystal-disposing section.

Abstract: A system and method for performing diffusion on a three-dimensional substrate is provided. The system includes a furnace for providing a doped (e.g., p-type) molten semiconductor material and a dropper for converting the molten semiconductor material into a series of uniformly sized droplets. The droplets are then provided to a first tube where they solidify into a semiconductor crystals. The semiconductor crystals are then heated for a predetermined period of time until an outer layer of the semiconductor crystals is melted. The melted outer layer can then be doped (e.g., n-type) and then allowed to re-solidify. As a result, a plurality of spherical shaped p-n devices is created.

Abstract: A thermal shield device is equipped in a crystal-pulling apparatus for pulling a silicon monocrystal ingot from a silicon melt reserved in a quartz crucible having an outer peripheral surface encircled with a heater. The thermal shield device has a tubular part to be used for surrounding a silicon monocrystal ingot being pulled and grown in an upward direction to prevent radiant heat from the heater toward the silicon monocrystal ingot. The tubular part has a lower end positioned above a surface of the silicon melt with a predetermined spacing therebetween. A protruding part is formed on a lower portion of the tubular part and filled with a thermal-insulating member. The protruding part extends to the inside of the tubular part and has a bottom wall, a vertical wall, and a top wall. The bottom wall is shaped like a ring having an outer edge connected to a lower edge of the tubular part and extends to the proximity of an outer peripheral surface of the silicon monocrystal ingot.

Abstract: A single crystal silicon growth apparatus, comprising: a chamber where a silicon substrate is to be inserted; a heat source for rising the temperature in an interior of the chamber; a cooling line for rapidly dropping the temperature in the interior of the chamber; a gas sprayer for providing a source gas and a purge gas inside the chamber; a gas inflow line connected to the gas sprayer for inflowing the source gas and the purge gas into the gas sprayer; and a gas exhausting line for maintaining the interior of the chamber with a vacuum.

Abstract: An equipment is disclosed for producing a single crystal in each of plural containers by thermally treating a raw material for the single crystal each charged in each of the container, including heaters provided corresponding to each of the containers, an elevator to move each of the containers upward and downward relatively to the respective one of the heaters, and a connecting member to connect at least one of the container and the heater of each of plural sets of the containers and the heaters mechanically to the elevator, wherein each container is moved vertically relatively to the respective one of the heaters by driving the elevator and passed through an area of thermal treatment formed by the heater to continuously form a melt in the raw material inside the container, and the single crystal is continuously produced in the container by solidifying the melt.

Abstract: A low dislocation density silicon carbide (SiC) is provided as well as an apparatus and method for growing the same. The SiC crystal, grown using sublimation techniques, is preferably divided into two stages of growth. During the first stage of growth, the crystal grows in a normal direction while simultaneously expanding laterally. Although dislocations and other material defects may propagate within the axially grown material, defect propagation and generation in the laterally grown material are substantially reduced, if not altogether eliminated. After the crystal has expanded to the desired diameter, the second stage of growth begins in which lateral growth is suppressed and normal growth is enhanced. A substantially reduced defect density is maintained within the axially grown material that is based on the laterally grown first stage material.

Abstract: Provided are a quartz glass crucible for pulling up a silicon single crystal, with which not only a defectless silicon single crystal can be pulled up but a single crystallization ratio can greatly be improved, and a production method therefor.

Abstract: A process for preparing strontium doped molten silicon for use in a single silicon crystal growing process is disclosed. Polysilicon is doped strontium and melted in a silica crucible. During melting and throughout the crystal growing process the strontium acts as a devitrification promoter and creates a layer of devitrified silica on the inside crucible surface in contact with the melt resulting in a lower level of contaminants in the melt and grown crystal.

Abstract: Disclosed are processes and reactor apparatus for rapidly producing large diameter, high-purity polycrystalline silicon rods for semiconductor applications. A.C. current, having a fixed or variable high frequency in the range of about 2 kHz to 800 kHz, is provided to concentrate at least 70% of the current in an annular region that is the outer 15% of a growing rod due to the “skin effect.

Abstract: A processing machine comprising a movable support means which can reciprocate between a first position and a second position and a reciprocating mean for reciprocating the movable support means, either one of processing means and a workpiece being mounted to the movable support means. A protective means is provided on the upstream side and/or downstream side of the movable support means when seen from the moving direction from the first position to the second position of the movable support means. The protective means includes at least one protective member composed of a synthetic resin sheet or film which can be kept rolled in a free state that tensile force is not applied and unrolled when tensile force is applied.

Abstract: The present invention was achieved in order to provide an apparatus for pulling a single crystal with which a single crystal having a low density of grown-in defects called infrared scatterers, dislocation clusters or the like can be grown. In the apparatus for pulling a single crystal having a crucible to be charged with a melt, a heater arranged around the crucible, a straightening vane in the shape of a side surface of an inverted truncated cone or a cylinder surrounding a pulled single crystal and a heat shield plate for inhibiting the radiant heat from diverging upward in the chamber from the side surface of the pulled single crystal located in the vicinity of the melt surface are arranged.

Abstract: A crucible holder made of a carbon material for use in crystal pulling operations and in the shape of a hollow receptacle. The holder includes at least two distinct and complementary parts that can be brought together by junction surfaces. When the parts are assembled to form the crucible holder, specific portions of the junction surfaces overlap to form at least one overlap area. The crucible holder can limit chemical reactions between the crucible and the holder and prolong the lives of both.

Abstract: A diaphragm is integrally formed with a movable section and a perimeter section. The movable section is adapted to be reciprocally moved, and the perimeter section is disposed around the movable section and shaped to provide a clamp receiving portion adapted to be clamped into a fixed position. A bending portion along which the movable section is reciprocally moved with the clamp receiving portion clamped is located closer to the movable section than the clamp receiving portion of the perimeter section.

Abstract: An apparatus for depositing a semiconductor film on a wafer, which is held on a holder inside a reactor, with at least one source gas supplied onto the wafer. The apparatus includes a decontamination film made of a semiconductor that contains at least one constituent element of the semiconductor film to be deposited. The decontamination film covers inner walls of the reactor, which are located upstream with respect to the source gas supplied and/or over the holder.

Abstract: A crystal puller for growing monocrystalline silicon ingots according to the Czochralski method which are devoid of agglomerated intrinsic point defects over a substantial portion of the radius of the ingot comprises a housing defining an interior having a lower growth chamber and an upper pull chamber. The pull chamber has a smaller transverse dimension than the growth chamber. A crucible is disposed in the growth chamber of the housing for containing molten silicon. A pulling mechanism is provided for pulling a growing ingot upward from the molten silicon through the growth chamber and pull chamber. An electrical resistance heater has a heating element sized and shaped for being disposed at least partially within the upper pull chamber of the housing in radially spaced relationship with the outer surface of the growing ingot for radiating heat to the ingot as it is pulled upward in the pull chamber relative to the molten silicon. The heating element has an upper end and a lower end.

Abstract: Continuously operated, two-part crystallizer which is particularly suitable for the resolution of racemic mixtures, and process for separating solid mixtures which are difficult to separate, in particular racemates.

Abstract: A single crystal silicon wafer with a back surface free of an oxide seal and substantially free of a chemical vapor deposition process induced halo and an epitaxial silicon layer on the front surface, the epitaxial layer is characterized by an axially symmetric region extending radially outwardly from the central axis of the wafer toward the circumferential edge of the wafer having a substantially uniform resistivity, the radius of the axially symmetric region being at least about 80% of the length of the radius of the wafer.

Abstract: A containment system (1) for use in cleaning of an MBE chamber contains a two part housing in a clam-shell like structure with upper (5) and lower (7) housing sections that are latched together (8) with the walls defining a containment region. The housing is secured to the face of the MBE chamber with the source flange cover of that chamber received through an opening in the rear wall (13 & 19). A closure (28) permits opening or closing a front access opening in the housing through which the containment region may be accessed. The housing includes a exhaust vent tube (11). The containment system includes the means for detecting fire (34) in the confinement region and extinguishing the fires (35) and exhausting any gases through the vent tube.

Abstract: An inner surface of a quartz crucible after being used is cleaned by an acid liquid, and an extraneous material adhered to its inner surface is removed. The inner surface after the extraneous material has been removed is heat treated at 1600° C. or more, and the inner surface where cristobalite formation occurs is recovered into an amorphous state. In this manner, the quartz crucible after being used for growing single crystal silicon is reproduced to a level equal to a new crucible.

Abstract: An equipment is disclosed for producing a single crystal in each of plural containers by thermally treating a raw material for the single crystal each charged in each of the container, including heaters provided corresponding to each of the containers, an elevator to move each of the containers upward and downward relatively to the respective one of the heaters, and a connecting member to connect at least one of the container and the heater of each of plural sets of the containers and the heaters mechanically to the elevator, wherein each container is moved vertically relatively to the respective one of the heaters by driving the elevator and passed through an area of thermal treatment formed by the heater to continuously form a melt in the raw material inside the container, and the single crystal is continuously produced in the container by solidifying the melt.

Abstract: This invention relates to fabrication of a single crystal of a compound semiconductor according to the vertical Bridgman method which improves a recess in the interface between solid and melt and can obtain a stable yield of single crystal growth characterized in that a part for discharging the heat of a crucible to the outside in the radial direction is formed at least in a part in the circumferential direction of a heater part for controlling the interface between solid and melt in a heater which surrounds the crucible and a semiconductor melt is gradually solidified from a lower part to an upper part in the crucible while maintaining the interface between solid and melt in a saddle shape, thereby growing a single crystal.

Abstract: A scale in the nanometer range for technical devices which are used for the high-resolution or ultrahigh-resolution imaging of structures. To construct the scale, at least two different crystalline or amorphous materials are used, which, when imaged, are easily distinguished from one another by their contrast. These material layers are deposited using a suitable material deposition method as a heterolayer sequence onto a substrate material. The produced heterolayer sequence is characterized experimentally using an analysis method that is sensitive to the individual layer thicknesses of the heterolayer sequence. The data obtained from the analysis method are evaluated and recorded. The layer structure is exposed by splitting open the heterolayer sequence in the deposition direction. The scale is suited for calibrating technical devices used for scanning electron microscopy, scanning transmission electron microscopy, or scanning probe microscopy (atomic force microscopy, scanning tunneling microscopy).

Abstract: An apparatus (100) and method (800) for forming high quality epitaxial layers of monocrystalline materials grown overlying monocrystalline substrates (310) such as large silicon wafers is provided. The apparatus (100) includes at least two deposition chambers (110) and (140) that are coupled together. The first chamber (110) is used to form an accommodating buffer layer (320) on the substrate (310) and the second (140) is used to form a layer of monocrystalline material (330) overlying the accommodating buffer layer (320).

Abstract: The invention provides a crystallization apparatus that includes an agitation tank, a liquid circulation means for circulating a liquid or a slurry along a wall of the agitation tank, and one or more temperature difference creation means capable of creating a temperature difference at the wall of the agitation tank, wherein the temperature difference creation means is installed to the agitation tank. The temperature difference creation means is, for example, arranged at a region where liquid or slurry spouted by rotating the liquid spouting device contacts the wall of the agitation tank or a region below that region, and which increases or decreases the temperature of the spouted liquid or slurry compared to the temperature of surrounding liquid or slurry. Since the apparatus with this configuration has a large vaporization area and a large heat transfer area, the induction period for crystal generation can be shortened, and crystals with narrow size distribution and large size can be obtained.

Abstract: A molecular beam source comprising a crucible having an opening, and a heater mounted to the crucible for evaporating by heating a molecular beam generating material accommodated in the crucible to emit a molecular beam from the opening, wherein the crucible has an accommodating section for accommodating the molecular beam generating material, a bent portion provided between the opening and the accommodating section so that the molecular beam generating material accommodated in the accommodating section does not face the opening directly, and a narrowed portion between the bent portion and the opening.

Abstract: A system and method for processing crystals is disclosed. The system includes a receiver tube for receiving semiconductor granules. The granules are then directed to a chamber defined within an enclosure. The chamber maintains a heated, inert atmosphere with which to melt the semiconductor granules into a molten mass. A nozzle, located at one end of the chamber, creates droplets from the molten mass, which then drop through a long drop tube. As the droplets move through the drop tube, they form spherical shaped semiconductor crystals. The drop tube is heated and the spherical shaped semiconductor crystals may be single crystals. An inductively coupled plasma torch positioned between the nozzle and the drop tube melts the droplets, but leaving a seed in-situ, or the droplets may be melted and a seed injected in-situ. The seed can thereby facilitate crystallization.

Abstract: An apparatus and method of providing a large semiconductor crystal at a low cost are provided. The apparatus of producing a semiconductor crystal includes a reactor tube having an open end at least one end side, formed of any one material selected from the group consisting of silicon carbide, silicon nitride, aluminum nitride, and aluminum oxide, or of a composite material with any one material selected from the group consisting of silicon carbide, silicon nitride, aluminum nitride, boron nitride, aluminum oxide, magnesium oxide, mullite, and carbon as a base, and having an oxidation-proof or airtight film formed on the surface of the base, a kanthal heater arranged around the reactor tube in the atmosphere, a flange attached at the open end to seal the reactor tube, and a crucible mounted in the reactor tube to store material of a semiconductor crystal. The material stored in the crucible is heated and melted to form material melt. The material melt is solidified to grow a semiconductor crystal.

Abstract: Heat shields for Czochralski pullers include a ring-shaped heat shield housing comprising inner and outer heat shield housing walls and an oblique heat shield housing floor and a heat shield housing roof that extend between the inner and outer heat shield housing walls. The heat shield housing contains insulating material therein. A support member is configured to support the heat shield housing within the crucible in a Czochralski puller. In one embodiment, the support member includes at least one support arm that extends to the ring-shaped heat shield housing. The at least one support arm may be hollow and may contain insulating material therein. In another embodiment, the support member is a ring-shaped support member. The ring-shaped support member may include inner and outer support member walls containing insulating material therebetween. The ring-shaped support member may also include at least one window therein. The ring-shaped member may be oblique.

Abstract: A high-quality crystal sheet is provided. An apparatus for use in producing a crystal sheet includes a substrate having a main surface on which a crystal sheet is formed, a crucible holding a melt therein, a movable member holding the substrate to move it to bring its main surface into contact with the melt and then move the substrate away from the melt, and cooling means for cooling the movable member.

Abstract: A device for producing a silicon carbide (SiC) single crystal contains a crucible having a storage region for holding a stock of solid SiC and having a crystal region for holding a SiC seed crystal. An insert made from glassy carbon is disposed in the crucible. In the method, solid SiC is sublimed as a result of the stock being heated and SiC in the gas phase is generated, which is conveyed to the SiC seed crystal, on which it grows as an SiC single crystal. A heat flux is controlled by an insert made from glassy carbon.

Abstract: A method for forming a solid solution alloy crystal includes forming a solid solution alloy crystal having at least the same diameter as a seed crystal. The seed crystal is exposed to a liquid containing a desired concentration of an alloying element to dissolve a portion of the seed crystal. The solid solution alloy crystal is then formed from the liquid. The method allows a large diameter solid solution alloy crystal to be grown in a reduced time or a larger diameter solid solution alloy crystal to be grown in a known fixed total process time.

Abstract: Methods for producing doped polycrystalline semiconductors and for producing doped monocrystalline semiconductors from predoped monocrystalline and polycrystalline semiconductors. The methods for producing doped polycrystalline semiconductors may include (1) providing a reactor for chemical vapor deposition, (2) creating a vapor within the reactor that includes a silicon compound and a preselected dopant, and (3) providing a substrate, exposed to the vapor, onto which the silicon and the dopant in the vapor are deposited to form doped polycrystalline silicon. The methods for producing doped monocrystalline semiconductors may include (1) selecting a first amount of a first semiconductor, the first semiconductor having a first concentration of the dopant, (2) selecting a second amount of a second semiconductor, and (3) using the first and second amounts to grow a monocrystalline semiconductor having a preselected concentration of the dopant.

Abstract: A single crystal of lithium niobate or tantalate, grown from a melt of a composition having an excessive Li over its stoichiometric composition, and having a molar fraction of Li2O/(Nb2O5+Li2O) or Li2O/ (Ta2O5+Li2O) within a range of at least 0.490 and less than 0.500, wherein at least one element selected from the group consisting of Mg, Zn, Sc and In is contained in an amount of from 0.1 to 3.0 mol % based on the total amount of the at least one element, Nb and Li, or the total amount of the at least one element, Ta and Li.

Abstract: Disclosed are processes and reactor apparatus for rapidly producing large diameter, high-purity polycrystalline silicon rods for semiconductor applications. A.C. current is provided to the rods by a power supply, having a fixed or variable high frequency in the range of about 2 kHz to 800 kHz, to concentrate at least 70% of the current in an annular region that is the outer 15% of a rod due to the “skin effect.

Abstract: A time-released dopant delivery system and method are provided in a Czochralski-type crystal-growing furnace to enable continuous doping of the melt over time. The dopant delivery system and method adjusts dopant levels within the melt as a function of time such that a controlled amount of dopant and, more typically, a substantially constant amount of dopant can be incorporated into the ingot over its length. By controlling the doping level in the ingot, the resistivity profile of the ingot can also be controlled over its length. In order to provide controlled dopant delivery, the dopant delivery system generally includes a vessel defining an internal cavity within which the dopant is disposed and an orifice through which the dopant, typically a molten dopant, is released. The dopant delivery system can also include means for submerging the vessel within the melt such that heat from the melt melts and therefore releases the dopant into the melt.

Abstract: A crucible is held in a closed position when the crucible is at a certain temperature. A temperature sensitive member expands differently in response to heat than other portions of the crucible. When the temperature of the temperature sensitive member is increased, the temperature sensitive member expands an amount different than do other portions of the crucible and thereby causes the crucible to open.

Abstract: An epitaxial system is provided for performing an epitaxial growth of IIIA-VA compound on the wafer substrate. The epitaxial system includes a first reaction region for providing a plasma of a first reactant, a second reaction region for epitaxially reacting the plasma of the first reactant with a second reactant on a wafer, and a guiding medium disposed between the first reaction region and the second reaction region for passing therethrough the second reactant and the first reactant plasma to the second reaction region.