Abstract: Provided is an atomic layer deposition (ALD) apparatus in which the generation of powders is suppressed by providing a largely dedicated exhaust path for each of the reactants utilized in the ALD process. The ALD apparatus includes a reactor in which an ALD process is performed on a wafer using two or more types of reactants; reactant suppliers, each of which alternately supplies a different reactant to the reactor; and an exhaust path for each type of reactant so that the non-reacted portion of the reactants removed from the reaction chamber do not mix and react in the exhaust path.

Abstract: A method for growing stoichiometric lithium niobate and lithium tantalate single crystals is provided. A crystal growing apparatus that includes a long crucible with a separation member therein is used. A solid feed material is quenched from a molten state, solidified in batches or sintered before charged in the long crucible to obtain substantially stoichiometric solids. The separation member divides the long crucible into a melting zone and a feeding zone located under the melting zone, and it could effectively prevent bubble formation in the growing crystal. The stoichiometry of the axial and radial composition can be well controlled, and the control of the diameter of the crystal body is easily achieved as well.

Abstract: A process for modifying the surface of a quartz glass crucible and a modified quartz glass crucible produced by the process, where the crucible has a transparent coated layer containing a crystallization accelerator on the surface. The process includes coating a mixed solution containing a metal salt and a partial hydrolyzate of alkoxysilane oligomer on the surface of the crucible and heating to obtain a quartz glass crucible having a transparent coated layer. The crystallization accelerator contains a metal oxide or a metal carbonate dispersed in a silica matrix.

Abstract: A crucible used in the growth of polycrystal silicon by a cast method comprises a crucible body for, when solid material silicon is melted, containing the melted material silicon, and a material holder provided on the crucible body, for holding further material silicon on the material silicon loaded into the crucible body.

Abstract: A laser optical system for directing a rectangular laser beam onto an amorphous or polycrystalline silicon film comprises linear beam forming means for forming the laser beams radiated from a plurality of laser oscillators linearly to be applied on the silicon film, the optical axes of the laser beams from the laser oscillators to linear beam forming means on the almost same plane, and linear beams are arrayed with a certain interval linearly on the amorphous or polycrystalline silicon film formed on a substrate. By providing the interval between the radiating laser beams, the laser optical system comprising the plurality of linear beam forming means can be arranged with a distance, thereby preventing the interference between optical parts.

Abstract: In a high rate pulling with a cooler 10 surrounding a single crystal 8, steam explosion by leakage from the cooler 10 is prevented. Flow rates La, Lb of cooling water are measured by flowmeters 14a, 14b on a cooling water inflow side and cooling water outflow side of the cooler 10. When flow rate difference &Dgr;L (La−Lb) determined from the flow rates La, Lb exceeds 20 cc/minute, open/close valves 15a, 15b, 15c are operated to stop water supply to the cooler 10 and drain outward the cooing water in the cooler 10.

Abstract: In a Czochralski (CZ) single crystal puller equipped with a cooler and a thermal insulation member, which are to be disposed in a CZ furnace, smooth recharge and additional charge of material are made possible. Further, elimination of dislocations from a silicon seed crystal by use of the Dash's neck method can be performed smoothly. To these ends, there is provided a CZ single crystal puller, wherein a cooler and a thermal insulation member are immediately moved upward away from a melt surface during recharge or additional charge of material or during elimination of dislocations from a silicon seed crystal by use of the Dash's neck method.

Abstract: The invention describes a CVD reactor on solid substrates and a related method of deposition of epitaxial layers on the wafers. In the reactor of the invention, the wafer carrier is transported between a loading position and a deposition position. In the deposition position, the wafer carrier is detachably mounted on an upper end of a rotatable spindle without an intermediate susceptor. The reactor of the invention may process a single wafer or a plurality of wafers at the same time. The invention also described several embodiments and variants of the invention. One of the variants of the invention provides a decrease in a heat drain from the wafer-supporting assembly through the spindle and a novel heating arrangement therefore. The advantages of the invention include lower reactor cycle, the lower cost and longer lifetime of the component parts, and better temperature control, among others.

Abstract: A seed crystal holder holds a SiC seed crystal while a SiC bulk single crystal is grown on the front surface of the seed crystal. The holder includes a back surface body with a bearing surface for bearing against a back surface of the SiC seed crystal. The holder includes a lateral mount for receiving the back surface body and the SiC seed crystal. The lateral mount has a projection located on an end facing the SiC seed crystal. The SiC seed crystal rests on the projection.

Abstract: A method is provided for determining crystallization conditions for a material, the method comprising: taking a plurality of different crystallization samples in an enclosed microvolume, the plurality of crystallization samples comprising a material to be crystallized and crystallization conditions which vary among the plurality of crystallization samples; allowing crystals of the material to form in plurality of crystallization samples; and identifying which of the plurality of crystallization samples form crystals.

Abstract: The invention relates to a method for treating plastic material, especially polyethylene terephthalate, wherein the relatively low temperature material is initially crystallized by heating before subjecting said material to heating or condensation in the solid phase. The material is then exposed to a hot treatment gas for at least 10 minutes in at least two chambers (2) of an apparatus and crystallized at a temperature above 135° C., e.g. 140-180° C. The is subsequently heated in a preheating chamber (3) having at least one to eight stages at a temperature of at least 185° C., preferably at least 200° C. and more preferably around 220° C.

Abstract: A method of crystallizing an amorphous silicon layer includes the steps of generating an excimer laser beam having a first energy density and a second energy density, irradiating an amorphous silicon layer with at least one exposure of the excimer, wherein the first energy density melts the amorphous silicon layer to a first depth from a surface of the amorphous silicon layer equal to the first thickness and the second energy density melts the amorphous silicon layer to a second depth from the surface of the amorphous silicon layer less than the first thickness.

Abstract: A substrate processing apparatus for drying a substrate is provided with a chamber, quartz tank, nitrogen supply part, blowing mechanism, hot water unit and substrate holding mechanism. A substrate after being subjected to cleaning with pure water is placed in the quartz tank in the chamber. This substrate is heated by immersing it into hot water supplied from the hot water unit (degassed and heated pure water), and then lifted in the atmosphere of the chamber by the substrate holding mechanism. The atmosphere of the chamber is brought into a low oxygen state by using of nitrogen gas supplied from the nitrogen supply part and blowing mechanism. Thereby, the pure water attached to the substrate evaporates by the accumulated heat of the substrate in the low oxygen atmosphere. This permits to provide a substrate processing apparatus and a substrate processing method with which it is possible to dry a substrate while suppressing the occurrence of water marks.

Abstract: A silica glass crucible is disclosed comprising a barium-doped inner wall layer. The crucible is made by introducing into a rotating crucible mold bulk silica grain to form a bulky wall. After heating the interior of the mold to fuse the bulk silica grains, an inner silica grain, doped with barium, is introduced. The heat at least partially melts the inner silica grain, allowing it to fuse to the wall to form an inner layer. The inner layer of the crucible crystallizes when used in a CZ process, extending the operating life of the crucible.

Abstract: A reactant gas (C) is supplied from a reactant gas supply means (1) concentratedly to active areas (A1) alone on a target article (A), a photochemical reaction between excimer UV and the reactant gas (C) is thereby accelerated in a low-temperature atmosphere. The reactant gas (C) is not supplied to areas (A2), where the photochemical reaction does not actively occur, and is not wasted. A reactant gas source having a large gas-supply capability is not required. The photochemical reaction can be stably performed with a simple structure in a low-temperature atmosphere.

Abstract: The compact chemical reactor includes a first substrate, a second substrate attached to the first substrate. A micro flow path is defined between the first substrate and the second substrate. A thin film heater provided in the flow path.

Abstract: The invention relates to an apparatus for growing thin films onto the surface of a substrate by exposing the substrate to alternately repeated surface reactions of vapor-phase reactants. The apparatus comprises at least one process chamber having a tightly sealable structure, at least one reaction chamber having a structure suitable for adapting into the interior of said process chamber and comprising a reaction space of which at least a portion is movable, infeed means connectable to said reaction space for feeding said reactants into said reaction space, and outfeed means connectable to said reaction space for discharging excess reactants and reaction gases from said reaction space, and at least one substrate adapted into said reaction space.

Abstract: A method of growing epitaxial layers on a wafer is provided and includes providing a wafer carrier having a surface for retaining the wafer; placing the wafer on the wafer-retaining surface of the wafer carrier while the wafer carrier is in a loading position separated from a spindle; transporting the wafer carrier toward the spindle; detachably mounting the wafer carrier on the upper end of the spindle for rotation therewith; and rotating the spindle and the wafer carrier while introducing one or more reactants into the reaction chamber. The invention also described several embodiments and variants of the method of the invention.

Abstract: Nanocrystals are synthesized with a high degree of control over reaction conditions and hence product quality in a flow-through reactor in which the reaction conditions are maintained by on-line detection of characteristic properties of the product and by adjusting the reaction conditions accordingly. The coating of nanocrystals is achieved in an analogous manner.

Abstract: A method comprising the steps of continuously changing the concentrations in solution of a biomacromolecule to be crystallized and a precipitant, thereby constructing a crystal phase diagram containing a solubility curve, searching for optimum conditions of crystallization on the basis of the constructed crystal phase diagram, and performing efficient growth of the crystal of the biomacromolecule. Also disclosed is an apparatus for implementing the method.

Abstract: Provided is a substrate processing apparatus capable of supplying pure water, the nitrogen gas concentration of which is stabilized. A pure water supply path is branched such that a dissolving part generates a high concentration pure water by dissolving nitrogen gas in pure water on one path, and a degassing part generates a low concentration pure water by degassing nitrogen gas from pure water on the other path. Pure water having a desired nitrogen gas concentration C can be supplied stably by sequentially measuring the nitrogen gas concentrations C1 and C2 on their respective paths, and mixing the high concentration pure water and low concentration pure water while the opening and closing of first and second pure water valves are adjusted to control first and second flows X1 and X2, so as to satisfy the following relationships: C1·X1+C2·X2=C·V; and X1+X2=V, wherein V is a total flow of pure water.

Abstract: A method for doping a melt with a dopant has the melt being provided in a crucible. The dopant is introduced into a vessel and the vessel is immersed in the melt, the dopant being transferred into the melt through an opening which forms in the vessel. There is also an apparatus which comprises a vessel containing the dopant and a device which is connected to the vessel, for lowering the vessel into a melt and for lifting the vessel out of the melt, the vessel being provided with an opening which is blocked by a closure piece which is of the same type of material as the melt and melts when it is brought into contact with the melt.

Abstract: An apparatus and method for producing a crystal with face-orientation control using a seed crystal being securely performed, and which can advantageously produce a high quality crystal with a large diameter quickly. A crystal-growth crucible movable in the vertical direction is used. While the temperature is being raised, the crucible is kept at a position where all the raw material, i.e., a crystalline substance placed in the crucible, is not melted. After the temperature stabilizes, the crucible moves in a first direction where the temperature becomes higher, so that the whole raw material and a part of the seed crystal melt. Then, the crucible moves in a second direction where the temperature becomes lower, whereby the seed crystal and the molten raw material sufficiently contact each other.

Abstract: A modified susceptor for use in an epitaxial deposition apparatus and process is disclosed. The modified susceptor has an inner annular ledge capable of supporting a semiconductor wafer and has a plurality of holes in the surface to allow cleaning gas utilized during an epitaxial deposition process to pass through the susceptor and contact substantially the entire back surface of the semiconductor wafer and remove a native oxide layer. Also, the plurality of holes on the susceptor allows dopant atoms out-diffused from the back surface during the epitaxial deposition process to be carried away from the front surface in an inert gas stream and into the exhaust such that autodoping of the front surface is minimized.

Abstract: A crystal growth station including a cylindrical crucible having powered bottom and top resistance heaters mounted below and above the crucible, respectively. A supplemental heating unit is positioned around the bottom edge of the crucible. The supplemental heating unit may be unpowered or powered to heat it independently of the top and bottom heaters. If unpowered, then the supplemental heating unit is formed of a cylinder around the lower portion of the crucible side wall and a washer shaped disk member extending under part,of the crucible bottom wall. The supplemental heating unit is generally wedge shaped. The supplemental heating unit is heated by radiation from the bottom heater. The heat is conducted from the disk to the cylinder. A supplemental heater may be similarly used at the top edge of the crucible. If powered, the cylinder and the disk have slits therein to form current paths.

Abstract: A rotational directional solidification crystal growth system includes a vertical furnace, a crucible, and a rotate support device. The vertical furnace contains a high-temperature portion and a low-temperature portion. The crucible has a seed well and a growth region. The seed well and the growth region contain a seed crystal and raw material, respectively. The crucible moves from the high-temperature portion of the furnace to the low-temperature portion of the furnace or the thermal profile moves related to a stationary crucible to proceed the crystal growth. The rotation support device supports and rotates the crucible, and the tangent velocity of the rotated crucible is no less than about 5&pgr;/3 cm/s.

Abstract: A silica glass crucible is disclosed comprising a barium-doped inner wall layer. The crucible is made by introducing into a rotating crucible mold bulk silica grain to form a bulky wall. After heating the interior of the mold to fuse the bulk silica grains, an inner silica grain, doped with barium, is introduced. The heat at least partially melts the inner silica grain, allowing it to fuse to the wall to form an inner layer. The inner layer of the crucible crystallizes when used in a CZ process, extending the operating life of the crucible.

Abstract: A surface modified quartz glass crucible and a process for modifying the crucible includes a layer of a metal oxide on the whole or a part of the inside and/or outside of the crucible, and baking it. At least an inside surface of the crucible is coated with a said metal oxide of magnesium, calcium, strontium or barium. The coated layer of the crucible does not abrade easily and provides a high dislocation free ratio of silicon single crystals pulled by using the crucible.

Abstract: An apparatus and a process for crystallizing substances from solutions or dispersions containing these substances, in a crystallizer containing a classifying zone (3), comprise

Abstract: A protein crystal growth assembly including a crystal growth cell and further including a cell body having a top side and a bottom side and a first aperture defined therethrough, the cell body having opposing first and second sides and a second aperture defined therethrough. A cell barrel is disposed within the cell body, the cell barrel defining a cavity alignable with the first aperture of the cell body, the cell barrel being rotatable within the second aperture. A reservoir is coupled to the bottom side of the cell body and a cap having a top side is disposed on the top side of the cell body.

Abstract: An apparatus for producing large diameter monocrystalline Group III-V, II-VI compounds that have reduced crystal defect density, improved crystal growth yield, and improved bulk material characteristics. The apparatus comprises a crucible or boat, an ampoule that contains the crucible or boat, a heating unit disposed about the ampoule, and a liner disposed between the heating unit and the ampoule. The liner is preferably composed of a quartz material. When the liner and the ampoule are made of the same material, such as quartz, the thermal expansion coefficients of the liner and ampoule are the same, which significantly increases the lifetime of the liner and the single-crystal yield.

Abstract: The invention teaches a method and apparatus for the generation of electric power by recycling the heat generated by various industrial processes. Thermophotovoltaic cells are used to convert the heat radiated from the industrial apparatus used to perform the various processes into electricity. Arrays of thermophotovoltaic cells placed around the apparatus, which may optionally be surrounded by an infrared (IR) emitter. The emitter serves to convert the IR radiation of the initial heat source into IR radiation having a more uniform wavelength. The cell arrays are spaced outward from a convection barrier tube and a short pass filter that may be placed around the IR emitter. A heat sink may be placed outside of the perimeter formed by the array of thermophotovoltaic cells, this serves to cool the thermophotovoltaic arrays, and also increases the power density of the cells, which in turn improves the power generation capacity of the array.

Abstract: A design for high pressure/high temperature apparatus and reaction cell to achieve ˜30 GPa pressure in ˜1 cm volume and ˜100 GPa pressure in ˜1 mm volumes and 20-5000° C. temperatures in a static regime. The device includes profiled anvils (28) action on a reaction cell (14, 16) containing the material (26) to be processed. The reaction cell includes a heater (18) surrounded by insulating layers and screens. Surrounding the anvils are cylindrical inserts and supporting rings (30-48) whose hardness increases towards the reaction cell. These volumes may be increased considerably if applications require it, making use of presses that have larger loading force capability, larger frames and using larger anvils.

Abstract: A crystal forming apparatus and method for using the apparatus, the apparatus including a plate and a film. The plate has a site adapted to hold a screening solution. The film is adjacent to the plate. The film seals the site and is adapted to contain a precipitant solution inside the site with an air gap between the screening solution and the precipitant solution. In a preferred embodiment, the film is transparent. In another preferred embodiment, the plate comprises a second transparent film supported by a lattice structure and the precipitant solution is sandwiched between the two films.

Abstract: Device quality, single crystal film of cubic zinc-blende aluminum nitride (AlN) is deposited on a cubic substrate, such as a silicon (100) wafer by plasma source molecular beam epitaxy (PSMBE). The metastable zinc-blende form of AlN is deposited on the substrate at a low temperature by a low energy plasma beam of high-energy activated aluminum ions and nitrogen ion species produced in a molecular beam epitaxy system by applying a pulsed d.c. power to a hollow cathode source. In this manner, films having a thickness of at least 800 Å were produced. The lattice parameter of as-deposited films was calculated to be approximately 4.373 Å which corresponds closely to the theoretical calculation (4.38 Å) for cubic zinc-blende AlN. An interfacial layer of silicon carbide, specifically the cubic 3C—SiC polytype, interposed between the epitaxial film of zinc-blende AlN and the Si(100) wafer provides a template for growth and a good lattice match.

Abstract: A furnace for growing a high volume of crystals includes a plurality of individual growth stations and first and second heater matrixes. Each individual growth station has a crucible and an insulating container generally surrounding the crucible and thermally isolating the crucible from the other individual growth stations. The first and second heater matrices each include at least two legs electrically connected in parallel and each of the legs have at least two resistance heaters electrically connected in series. Each of the individual growth stations have at least one of the resistance heaters within the first heater matrix and at least one of the resistance heaters within the second heater matrix associated therewith. The resistance heaters of the first heater matrix are located above the crucibles and are preferably adapted to provide a homogeneous temperature across tops of the crucibles.

Abstract: A furnace for growing a high volume of crystals includes a plurality of individual growth stations and first and second heater matrixes. Each individual growth station has a crucible and an insulating container generally surrounding the crucible and thermally isolating the crucible from the other individual growth stations. The first and second heater matrices each include at least two legs electrically connected in parallel and each of the legs have at least two resistance heaters electrically connected in series. Each of the individual growth stations have at least one of the resistance heaters within the first heater matrix and at least one of the resistance heaters within the second heater matrix associated therewith. The resistance heaters of the first heater matrix are located above the crucibles and are preferably adapted to provide a homogeneous temperature across tops of the crucibles.

Abstract: A process for removing photoresist from semiconductor wafers is disclosed wherein at least one semiconductor wafer having at least one layer of photoresist is positioned in a process tank; ozone gas is provided to said process tank; and said semiconductor wafer is spayed with a mixture of ozone and deionized water via at least one nozzle. The temperature during the process is maintained at or above ambient temperature. The ozone gas supplied to the tank is preferably under pressure within said process tank and the nozzles preferably spray the mixture of deionized water and ozone at a nozzle pressure between 5 and 10 atmospheres. In another embodiment, the invention is an apparatus for carrying out the process.

Abstract: There is disclosed an apparatus and method that appear to alter the effects of gravity by generating a magnetic field that causes an upward/downward magnetic force to act on a substance in a container. This offsets or adds to the downward force of gravity, to simulate a low-gravitational or excess-gravitational environment inside the substance.

Abstract: In an apparatus for vapor phase growth of silicon single crystal thin films, in-plane uniformity of susceptor temperature is improved and film thickness of a silicon single crystal thin film is uniformized. The base material of a lift pin 8 provided in a pocket 5a of a susceptor 5 is changed to a base material lower in thermal conductivity than a base material of the susceptor 5, by which local decreases in susceptor temperature in the vicinity of the lift pin are prevented. As the base material of the lift pin 8, SiC, carbon of a desired grade and quartz are preferred.

Abstract: In order to prevent a region of supercooling from increasing and to effect uniform crystal growth, the generation of latent heat is detected from changes in temperature of a crucible or a heater or from changes in heat flow rate and also the position of solid-liquid interface is mathematically found, to control the crucible-descending rate or temperature distribution so that the crystal growth rate can be kept at a predetermined value.

Abstract: A protein crystal growth assembly including a crystal growth cell and further including a cell body having a top side and a bottom side and a first aperture defined therethrough, the cell body having opposing first and second sides and a second aperture defined therethrough. A cell barrel is disposed within the cell body, the cell barrel defining a cavity alignable with the first aperture of the cell body, the cell barrel being rotatable within the second aperture. A reservoir is coupled to the bottom side of the cell body and a cap having a top side is disposed on the top side of the cell body.

Abstract: A method for epitaxial deposition of atoms or molecules from a reactive gas on a deposition surface of a substrate is described. The method includes the following steps: a first amount of energy is supplied by heating at least the deposition surface; and an ionized inert gas is conducted, at least from time to time, onto the deposition surface in order to supply, at least from time to time, a second amount of energy through the effect of ions of the ionized inert gas on the deposition surface. The first amount of energy is less than the energy amount necessary for the epitaxial deposition of atoms or molecules of the reactive gas on the deposition surface. A sum of the first energy amount and the second energy equaling, at least from time to time, a total amount of energy that is sufficient for the epitaxial deposition of atoms or molecules of the reactive gas onto the deposition surface.

Abstract: Disclosed are processes and reactor apparatus for rapidly producing large diameter, high-purity polycrystalline silicon rods for semiconductor applications. A.C. current, having a fixed or variable high frequency in the range of about 2 kHz to 800 kHz, is provided to concentrate at least 70% of the current in an annular region that is the outer 15% of a growing rod due to the “skin effect.

Abstract: The invention provides methods, apparatus, and systems for performing high-throughput preparation and screening of salts and polymorphs of drug candidates. The invention is directed towards enhancing the pre-formulation discovery process used for drug development. In particular, processes that determine suitable salts and processes that discover substantially every polymorph that can form from a particular drug candidate are provided. The processes are performed using several apparatuses that are specifically configured to carry-out various steps in a high-throughput characterization process. One such apparatus is configured for synthesizing a plurality of library members based on, for example, a library model generated by a computer system. Another apparatus may filter the synthesized solution to provide a substantially pure mixture that can be subjected to salt or polymorph testing.

Abstract: The invention describes a CVD reactor on solid substrates and a related method of deposition of epitaxial layers on the wafers. In the reactor of the invention, the wafer carrier is transported between a loading position and a deposition position. In the deposition position, the wafer carrier is detachably mounted on an upper end of a rotatable spindle without an intermediate susceptor. The reactor of the invention may process a single wafer or a plurality of wafers at the same time.

Abstract: Chemical vapor deposition epitaxial reactor comprising two reaction chambers, each provided with a susceptor, enclosed in a bell jar, to be induction heated by an induction coil supplied by a medium frequency AC generator, and generator means for providing a medium frequency power supply to the two induction coils of both the reaction chambers, wherein the means for power supplying the two induction coils are alternatively actuated, so that when one of the reaction chambers is heated the other one is purged, loaded and/or unloaded, providing however a time overlap of 1 to 10 minutes between the heating times of the two processes. A computerized controller provides to control the medium frequency generators in accordance with a dedicated software for providing an actuating method to the specific reactor.

Abstract: A method of growing protein crystals in a protein crystal growth assembly including a crystal growth cell and further including a cell body having a top side and a bottom side and a first aperture defined therethroug, the cell body having opposing first and second sides and a second aperture defined therethrough. A cell barrel is disposed within the cell body, the cell barrel defining a cavity alignable with the first aperture of the cell body, the cell barrel being rotatable within the second aperture. A reservoir is coupled to the bottom side of the cell body and a cap having a top side is disposed on the top side of the cell body. The method includes steps of rotating the cell barrel to orient the insert in a fill/removal position; loading and securing a protein into the insert; rotating the barrel to a launch configuration position; rotating the barrel to activate and experiment by placing the cell in a growth position; and then rotating the barrel further to deactivate the experiment.

Abstract: Systems and methods are described that allow the high-throughput preparation, processing, and study of arrays of samples, each of which comprises at least one compound. Particular embodiments of the invention allow a large number of experiments to be performed in parallel on samples that comprised of one or more compounds on the milligram or microgram quantities of compounds. Other embodiments of the invention encompass methods and devices for the rapid screening of the results of such experiments, as well as methods and devices for rapidly determining whether or not similarities exist among groups of samples in an array. Particular embodiments of the invention encompass methods and devices for the high-throughput preparation of different forms of compounds (e.g., different crystalline forms), for the discovery of new forms of old compounds, and for the discovery of new methods of producing such forms.

Abstract: A silica glass crucible is disclosed comprising a barium-doped inner wall layer. The crucible is made by introducing into a rotating crucible mold bulk silica grain to form a bulky wall. After heating the interior of the mold to fuse the bulk silica grains, an inner silica grain, doped with barium, is introduced. The heat at least partially melts the inner silica grain, allowing it to fuse to the wall to form an inner layer. The inner layer of the crucible crystallizes when used in a CZ process, extending the operating life of the crucible.