Abstract: The invention relates to a process for melting semiconductor material in a crucible which is located in a container, and is enclosed by a fixed heating device. The invention also relates to a heating device which is suitable for carrying out the process. The process is one wherein a heater of a displaceable heating device is lowered from a lock chamber above the container through an open shut-off valve into the container in the direction of the semiconductor material, and the semiconductor material is melted using the fixed heating device and the lowered heater. The heater is then raised back out of the container into the lock chamber after the semiconductor material has been melted. A door is provided in the lock chamber to allow the displaceable heater to be removed after the semiconductor material has been melted.

Abstract: An atmospheric pressure chemical vapor deposition system includes plural meshed conveyer belts extending in parallel for transferring semiconductor wafers at intervals, a reactant gas injector located over the plural meshed conveyer belts for creating reacting zone over the conveyer belts and a driving mechanism for moving the plural conveyer belts, wherein the driving mechanism moves the conveyer belts at different speeds so as to give rise to a rotation of each semiconductor wafer in the reacting zone, thereby uniformly exposing the entire surface of the semiconductor wafer to the reactant gases, which creates the depositing conditions different in the reacting zone.

Abstract: Reactive gas is released through a crystal source material or melt to react with impurities and carry the impurities away as gaseous products or as precipitates or in light or heavy form. The gaseous products are removed by vacuum and the heavy products fall to the bottom of the melt. Light products rise to the top of the melt. After purifying, dopants are added to the melt. The melt moves away from the heater and the crystal is formed. Subsequent heating zones re-melt and refine the crystal, and a dopant is added in a final heating zone. The crystal is divided, and divided portions of the crystal are re-heated for heat treating and annealing.

Abstract: A method of growing a layer of Group III nitride material on a substrate by molecular beam epitaxy includes the steps of (i) disposing a substrate in a vacuum chamber, (ii) reducing the pressure in the vacuum chamber to a pressure suitable for epitaxial growth by molecular beam epitaxy, (iii) supplying ammonia through an outlet of a first supply conduit into the vacuum chamber so that the ammonia flows towards the substrate; and (iv) supplying a Group III element in elemental form through an outlet of a second supply conduit into the vacuum chamber so that said Group III element flows towards the substrate. The method causes a layer containing Group III nitride to be grown on the substrate by molecular beam epitaxy. In the method, the outlet of the first supply conduit is disposed nearer to the substrate than the outlet of the second supply conduit.

Abstract: When a pulled single crystal becomes heavier, the strength of a seed crystal holder made of a carbon material is not sufficient, leading to falling of the single crystal. On the other hand, a seed crystal holder made of metal causes heavy metal contamination, or the strength thereof deteriorates early because of thermal fatigue. Accordingly, a seed crystal holder, comprising an inner cylindrical body made of metal which directly holds a seed crystal, and a carbon cylindrical body arranged around the inner cylindrical body which covers the periphery thereof, is used.

Abstract: A suspender for suspending polycrystalline rods steadfastly and easily in a furnace for single-crystal fabrication by the recharge or additionally charged method is disclosed. The suspender includes a plate which is made of molybdenum or SiC-coated graphite and a stick perpendicularly connected to the center of the plate. Both sides of the openings are arms for supporting the polycrystalline rods, thereby suspending the polycrystalline rods vertically in the opening. Means for preventing the polycrystalline rods from slipping out of the suspender are provided at ends of the arms. Therefore, the polycrystalline rods will not slip from the opening even though the plate is inclined. The suspender is suspended in the furnace by a stick. The polycrystalline rods require few tasks to form grooves and install on the suspender, thus decreasing the process time and manufacturing cost.

Abstract: A crystal growth method having the steps of: preparing a growth container having a vapor generating chamber VC provided with a source material 14, a growth chamber GC provided with a seed crystal 12, and a coupling portion 18 having a cross sectional area narrower than a cross sectional area of each of the vapor generating chamber and the growth chamber, the coupling portion coupling the vapor generating chamber and the growth chamber; and vapor-phase growing a single crystal on the seed crystal by forming a temperature gradient in the growth container and by maintaining the seed crystal in the growth chamber at a growth temperature and the source material in the vapor generating chamber at a vapor supply temperature higher than the growth temperature. A crystal having a diameter larger than that of a seed crystal can be formed easily.

Abstract: The present invention is directed to a single crystal pulling crucible of carbon fiber reinforced carbon composite material formed by the filament windings by combination of axially reinforced layers as well as circumberentially reinforced layers, which combination is given in two or more sets, and to the producing method thereof. The circumferentially reinforced layers resist a force tending to exapand a drum portion of the crucible, and the axially reinforced layers resist a force tending to push down a bottom of the crucible. The axially reinforced layers extending from the bottom portion to the drum portion can be formed by at least either of a level winding of a contact angle of 0.degree. to 10.degree. with respect to the center axis and a poral winding, and the circumferentially reinforced layers in area adjacent to the drum portion out of the drum portion and the bottom portion can be formed by at least either of a parallel winding of a contact angle of 70.degree. to 90.degree.

Abstract: An apparatus and a method for producing single crystal semiconductor particulate in near spherical shape and the particulate product so formed is accomplished by producing uniform, monosized, near spherical droplets; identifying the position of an undercooled droplet in a nucleation zone; and seeding the identified droplet in the nucleation zone to initiate single crystal growth in the droplet.

Abstract: An apparatus and method for precisely calibrating the transfer arm of a multiple station wafer processing system without breaking vacuum and with a minimum of system downtime is provided. A system of determining and properly aligning the crystallographic orientation of the wafers before processing as well as monitoring the orientation of individual wafers during wafer transfer between processing stations is also provided.

Abstract: A semiconductor chemical vapor deposition reactor includes a susceptor and a cover above the susceptor to reflect and radiate heat from the susceptor back onto the top surfaces of the wafers held on the susceptor, thereby minimizing temperature gradients on the wafers and reducing slip. The cover has an opening in the center through which process gases are injected, creating a Bernouli effect to draw the process gases between the cover and susceptor, where the process gases then deposit on the wafers secured thereon.

Abstract: Alkali halide crystal is grown from a melt in a novel graphite crucible which has a surface depth region of its inside surface impregnated with glassy carbon to eliminate porosity, so that the melt does not leak through or wet the carbon. Additionally, the graphite may be coated with glassy carbon to provide a smoother surface. Also disclosed is a porous graphite crucible lined with a layer of graphitic pyrolytic carbon to prevent wetting of the surface by the melt and to permit release of the cooled crystal without remelting.

Abstract: A piston-activated crystal-growing apparatus includes a crucible for containing a seed and a solidifiable liquid covering the seed. In operation, thermal gradient is established in the crucible, and a piston moves within the crucible in the direction of the crystal.

Abstract: The invention provides a method of manufacturing a large-area electronic device, for example a flat panel display, comprising thin-film circuit elements, and also laser apparatus for crystallizing a portion of a semiconductor thin-film (1) with a beam (11) of set energy. The energy of the beam (11) is set in accordance with the output from a light detector (22) to regulate the crystallization of a device portion (3,4 and/or 5) of a semiconductor thin film (1) at which the beam (11) is subsequently directed with its set energy. The light detector (22) monitors the surface quality of a previously crystallized portion (2). In accordance with the present invention, the light detector (22) is located at a position outside the specular reflection path (25) of the light returned by the surface area of the crystallized portion (2) and detects a threshold increase (D) in intensity (I.sub.s) of the light (26) being scattered by the surface area of the crystallized portion.

Abstract: A single crystal pulling apparatus and droppage preventing device constituted so as to enable the mechanical strength required by an arm to be decreased, and to enable arm manufacturing costs to be reduced and the pulling apparatus to be made more compact, and furthermore, to eliminate the need to provide in a separate manner a mechanism for preventing single crystal droppage, and to enhance reliability and durability by not adversely affecting a clean environment during single crystal growth. The arm has a mating member, which mates with the mating portion of a single crystal, and does not allow the single crystal to drop when pulling the single crystal. The arm undergoes an attitude change to a mating position in accordance with moving a circular motion having a circular motion support point as the center of the circular motion.

Abstract: An apparatus and method for the growth and etching of materials where a substrate on which a film is being deposited or which is being etched is maintained at a lower temperature than a precursor cracking temperature. The apparatus includes a susceptor with separators, made of an optically transmissive material with low thermal conductivity, such as quartz, upon which the substrates are mounted. The susceptor is heated to a precursor cracking temperature while the substrates are maintained at a lower deposition temperature by the separators. The substrates are heated by black body radiation transmitted through the separators to the substrates.

Abstract: A crystal plate 1 is grown in a continuous process by first purifying a crystal source material, a crystal melt or powder, in a purification station 3. Valves 7 control the flow of purified crystal melt or source powder 9 to a first hot zone 11, whose temperature is above the melt temperature of the crystal. A dopant source 17 with controller 19 provides dopant to the liquefied crystal 15. The first heater zone 21 surrounding the first hot zone 11 heats the crystal above its melting temperature. The second heater zone 27 produces a temperature in the second zone which is below the melt temperature of the crystal. The liquefied crystal, the liquid solid interface and the first portion of the crystal are supported in a boat-shaped crucible container with a bottom 31 and side walls. As the crystal leaves the support plate 31 it passes on to a conveyor 33. The crystal moves within an enclosure 43, which has a noble gas or noble gas and reactant gas atmosphere 45.

Abstract: Large diameter single crystals of aluminum nitride (AlN) are grown isotropically by injecting a nitrogen-containing gas into liquid aluminum at elevated temperatures. A seed crystal that is maintained at a temperature below that of the surrounding liquid aluminum is pulled from the melt, while the AlN that is formed in the melt is deposited on the seed crystal. An apparatus for carrying out the method is also disclosed.

Abstract: A crucible is held in a closed position when the crucible is at a certain temperature. A temperature sensitive member expands differently in response to heat than other portions of the crucible. When the temperature of the temperature sensitive member is increased, the temperature sensitive member expands an amount different than do other portions of the crucible and thereby causes the crucible to open.

Abstract: Pure silicon feedstock is melted and vaporized in a physical vapor transport furnace. In one embodiment the vaporized silicon 46 is reacted with a high purity carbon member 74, such as a porous carbon disc, disposed directly above the silicon. The gaseous species resulting from the reaction are deposited on a silicon carbide seed crystal 50 axially located above the disc, resulting in the growth of monocrystalline silicon carbide 56. In another embodiment, one or more gases, which may include a carbon-containing gas, are additionally introduced at 84 into the furnace, such as into a reaction zone above the disc, to participate in the growth process.

Abstract: A heat shield for use in a crystal puller around a monocrystalline ingot grown out of a crucible in the crystal puller filled with molten semiconductor source material. The heat shield includes a reflector having a central opening sized and shaped for surrounding the ingot as the ingot is grown to reduce heat transfer from the crucible. The reflector is adapted to be supported in the crystal puller between the molten material and a camera aimed toward at three separate points on a meniscus formed between the ingot and an upper surface of the molten material. The reflector has at least three passages extending through the reflector. Each of the passages is located along an imaginary line extending between the camera and one of the points on the meniscus. This permits the camera to view the points so the positions of the points can be determined by the camera for calculating the diameter of the ingot while minimizing heat loss through the passages.

Abstract: In a method for epitaxially growing objects of SiC, a Group III-nitride or alloys thereof on a substrate (13) received in a susceptor (7) having circumferential walls (8) these walls and by that the substrate and a source material (24) for the growth are heated above a temperature level from which sublimation of the material grown starts to increase considerably. The carrier gas flow is fed into the susceptor towards the substrate for carrying said source material to the substrate for said growth. At least a part of said source material for said growth is added to the carrier gas flow upstream the susceptor (7) and carried by the carrier gas flow to the susceptor in one of a) a solid state and b) a liquid state for being brought to a vapor state in a container comprising said susceptor by said heating and carried in a vapor state to said substrate for said growth.

Abstract: The process of manufacturing silicon single crystals by the CZ method is significantly improved by the present apparatus wherein raw material (polycrystalline silicon) is automatically loaded into a quartz crucible. After a protection sheet (15) is employed to cover the inner side wall of the container (3), which has an inner diameter smaller than that of the quartz crucible (10), a present amount of polycrystalline silicon (17) is loaded from the loading means (6) into the container (3). The container (3) is then filled with pure water that is thereafter frozen into an ice block (22). Subsequently, the ice block (22) is raised up from the container (3). Thereafter, the protection sheet (15) is removed from the ice block (22) and the ice block (22) is loaded into the quartz crucible (10). The ice block (22) is then caused to melt and the quartz crucible (10) and polycrystalline silicon are caused to dry up. The above operations are performed by the conveying apparatus (1).

Abstract: When a pulled single crystal becomes heavier, the strength of a seed crystal holder made of a carbon material is not sufficient, leading to falling of the single crystal. On the other hand, a seed crystal holder made of metal causes heavy metal contamination, or the strength thereof deteriorates early because of thermal fatigue. Accordingly, a seed crystal holder, comprising an inner cylindrical body made of metal which directly holds a seed crystal, and a carbon cylindrical body arranged around the inner cylindrical body which covers the periphery thereof, is used.

Abstract: A temperature sensor 42 is provided in a furnace 11, measuring temperature above a molten liquid 24 put in a crucible 12 to check proceedings of evaporation of oxygen vaporized from a free surface 44 of the molten liquid 24. From the data, and considering the relation with the oxygen dissolved into the crucible 12, the oxygen concentration in the molten liquid 24 can be found and the amount of oxygen taken into a single silicon crystal 40 pulled up from the molten liquid 24 can be figured out.

Abstract: A multi-shelled melt container is disclosed for liquefying and crystallizing substances which comprises at least an inner shell and a bearing shell. While the inner shell--which has a thin wall in comparison to the wall of the bearing shell--consists of an inert material with respect to the melt, the bearing shell serves exclusively to fixate and support the inner shell and is correspondingly constructed in a mechanically stable fashion. The device can also comprise means to pump the melt over into a collection vessel.

Abstract: A method of reinforcing a crucible for the containment of molten semiconductor material in a Czochralski process, and of inhibiting formation of dislocations within a single crystal grown by the process. The crucible includes a body of vitreous silica having a bottom wall and a sidewall formation extending up from the bottom wall and defining a cavity for holding the molten semiconductor material. The sidewall formation and bottom wall each have an inner and an outer surface. A first devitrification promoter is deposited on the inner surface of the sidewall formation at a temperature below about 600.degree. C. The deposit is such that, when the crucible is heated above 600.degree. C., a first layer of substantially devitrified silica forms on the inner surface which is capable of promoting substantially uniform dissolution of the inner surface and reducing the release of crystalline silica particulates into the molten semiconductor material as a crystal is pulled from the molten semiconductor material.

Abstract: A crucible in which a semiconductor material is melted and held during a crystal growing process. The crucible includes a body of vitreous silica having a bottom wall and a sidewall formation extending up from the bottom wall and defining a cavity for holding the molten semiconductor material. The sidewall formation has an inner and an outer surface. A first devitrification promoter on the inner surface of the sidewall formation is distributed such that a first layer of substantially devitrified silica is formed on the inner surface of the crucible which is in contact with the molten semiconductor material when the semiconductor material is melted in the crucible during the crystal growing process. A second devitrification promoter on the outer surface of the sidewall formation is distributed such that a second layer of substantially devitrified silica is formed on the outer surface of the crucible when the semiconductor material is melted in the crucible during the crystal growing process.

Abstract: Bulk, low impurity aluminum nitride (AlN) single crystals are grown by sublimation or similar deposition techniques at growth rates greater than 0.5 mm/hr.

Abstract: According to the present invention, in the growth of an oxide single crystal or a compound semiconductor single crystal such as GaAs single crystal by the CZ method or LEC method, the tendency of concave solid-liquid interface shape at the periphery of the growing crystal can be suppressed to prevent polycrystallization without localized heating of the solid-liquid interface, while controlling the diameter of the growing crystal even when using a crucible with a larger diameter, thus improving the yield of crystal on a commercial scale. In the invention, the end of a cylindrical body having an inner diameter of larger than the predetermined diameter of straight part of the growing crystal is immersed in the raw material melt or liquid encapsulant and the crystal is pulled while preventing the shape of the solid-liquid interface from becoming concave by controlling the rotation rate of at least one of a crucible holding the raw material melt, the growing crystal and cylindrical body.

Abstract: A crystal manufacturing apparatus includes a crucible for containing a material, a heater for heating and melting the material, and a heat insulating cylinder arranged so as to surround the crucible and the heater. The crystal manufacturing apparatus is operated in accordance with the Czochralski method. The heat insulating cylinder is arranged to be vertically movable. When two or more crystals are pulled within a single batch, the vertical position of the heat insulating cylinder is changed between the manufacture of the crystals, so that the thermal histories of the crystals are made different from one another. Moreover, when a crystal is pulled in accordance with the Czochralski method, the heat insulating cylinder is moved vertically while the crystal is being pulled.

Abstract: A seed crystal holder used in a crystal pulling apparatus operated in accordance with the Czochralski method. In the seed crystal holder, a heat-resistant cushioning material is provided between the surface of a seed crystal and the contact surface of claws of the holder or between a cutaway surface of the seed crystal and a contact surface of an insert of the holder. The heat-resistant cushioning material is selected from the group consisting of carbon fiber felt, glass fiber felt, metallic fiber felt, or selected from materials that cause plastic deformation such as Al.

Abstract: In the formation of a thin film on the surface of a semiconductor crystal substrate by using a horizontal type vapor phase growth apparatus, the distribution of the thickness and resistivity of the thin film can be properly obtained by adjusting the concentration distribution of the raw material gas in the mixture gas in the width direction of the reaction vessel over the substrate surface. And in the reaction vessel, carrier gas is supplied from the position close to the transfer port of the substrate, and raw material gas is supplied from the position located in the downstream side of a vortex generation region caused by the flow of the carrier gas.

Abstract: A weight control in diameter method by using a load cell is applied to a wire-single crystal silicon pulling mechanism, such that the weight of single crystal silicon can be correctly measured, thereby obtaining superior control in diameter and reducing the cost of manufacturing the single crystal silicon.

Abstract: A heat shield for use in a crystal puller around a monocrystalline ingot grown out of a crucible in the crystal puller filled with molten semiconductor source material. The heat shield includes a reflector having a central opening sized and shaped for surrounding the ingot as the ingot is grown to reduce heat transfer from the crucible. The reflector is adapted to be supported in the crystal puller between the molten material and a camera aimed toward at three separate points on a meniscus formed between the ingot and an upper surface of the molten material. The reflector has at least three passages extending through the reflector. Each of the passages is located along an imaginary line extending between the camera and one of the points on the meniscus. This permits the camera to view the points so the positions of the points can be determined by the camera for calculating the diameter of the ingot while minimizing heat loss through the passages.

Abstract: A silicon melting crucible having a double structure, in which a quartz crucible is inserted inside of a carbon crucible, is provided with devices for preventing deformation, such as turning-down, buckling and bending at an upper portion of the quartz crucible, or invasion of an SiO gas into a space between the quartz crucible and the carbon crucible during pulling up of a silicon single crystal. According to one form of the invention an upper portion of the quartz crucible has a frusto-conical inclined portion with an angle of inclination desirably of from 5.degree. to 40.degree.. According to another form of the invention a carbon ring having a cross section of either L-shape or U-shape is applied to the upper portion of the quartz crucible and the carbon crucible.

Abstract: An electrode is disposed at the lower end of a radiation screen. The electrode is made of single-crystal silicon. A circuit including a power source is established by contacting the electrode and the seed crystal to a silicon melt.

Abstract: A heater is configured to reduce oxygen in the melt near the growing crystal is provided by defining a high temperature region in an upper region of the heater, above a melt surface of semiconductor material from which a crystal is grown. This effectively shifts the heat balance of the system upwards, and alters thermal convections of oxygen within the melt. Accordingly, the primary vehicle for transporting oxygen to the growing crystal is suppressed.

Abstract: In an apparatus for the production of single crystals (103) by the Czochralski melt drawing method, a gripping device (125a, 125b) is provided, by means of which the crystal (103) is held during the growing process by a pressure which is exerted radially on its lateral surface and which exceeds the frictional resistance, as a result of which the weight of the growing crystal is completely supported. The gripping device (125a, 125b) has at least two holding devices (128a, 128b) arranged opposite each other, which, during the crystal growth phase, initially move parallel to the crystal and then, after a certain desired crystal diameter has been reached, are laid against the crystal by means of the holding devices (128a, 128b) in such a way that the growth the crystal in the area of the melting zone is not disturbed.

Abstract: An apparatus for producing a single crystal by the Czochralski method is disclosed in which an exhaust system is provided with a water sealing bubbler. On the upstream side of the bubbler is provided a buffer or a vacuum breaker or a buffer and a vacuum breaker. The structure prevents the sealing water in the bubbler from flowing backward, so that danger of steam explosion can be avoided.

Abstract: An improvement in the safety, ease and speed with which the operation of attaching a crucible 1 to a support base 10 of a single crystal pulling apparatus can be completed is provided. With the method of attaching the crucible 1 to the support base 10, the support base 10 is divided into a support base bottom portion 11 and a support base drum portion 12 which is fitted to the bottom portion 11, and the crucible 1 is mounted on the support base bottom portion 11. The support base 10 is then assembled by fitting the support base drum portion 12 to the support base bottom portion 11.

Abstract: The invention relates to a single crystal pulling apparatus comprising; an outer crucible 11 positioned inside a chamber (gas tight container) 2, for storing a semiconductor melt 21, and an inner crucible 30 comprising a cylindrical partition body, mounted inside the outer crucible 11 to form a double crucible, and wherein a single crystal of semiconductor 26 is pulled from the semiconductor melt 21 stored inside the inner crucible 30. With this arrangement, the inner crucible 30 is made from quartz and comprises an inside layer A, an outside layer C, and an intermediate layer B which lies between the inside layer A and the outside layer C, and the intermediate layer B is made from quartz with a larger gas bubble content than the quartz which makes up the inside layer A and the outside layer C of the inner crucible 30.

Abstract: The present invention provides a process for preparing SOI wafer, more specifically, a process for preparing a large-sized SOI wafer of high quality of crystallization employing an apparatus for the manufacture of the SOI wafer in a simple and efficient manner. The apparatus for the manufacture of SOI wafer of the invention comprises electric furnace for heating polycrystalline silicon filled in a heat-resistant container; means for moving up and down of an insulating substrate whose one side is accompanied with silicon single crystalline seed, and immersing the substrate in the molten silicon filled in the heat-resistant container to form a thin single crystalline film on the substrate; and, shapers to keep a constant thickness of the thin single crystalline film which is formed on the insulating substrate by the moving means.

Abstract: A method, mechanisms and jig for handling a member of a crystal pulling apparatus are disclosed. The crystal pulling apparatus grows a single crystal from a melt of a crystalline material by a CZ method. Handling of a graphite crucible or the like of the crystal pulling apparatus, including a vertical moving operation, a swinging operation, or the like, is performed using a crane and a lifting jig. This makes it possible to readily move the member of the crystal pulling apparatus vertically and otherwise without relying on manual labor.

Abstract: Homogeneous crystals are grown from a multicomponent melt double crucible assembly with an injector which affords improved flow of melt from the outer to the inner crucible. Guide rods are provided external to the outer crucible and locate the inner crucible with reduced probability of sticking. Means are also provided for withdrawing the inner crucible after crystal growth is complete as is a method of removing trapped gas from the apparatus prior to crystal growth.

Abstract: The pull head of a Czochralski crystal puller is mounted on a frame which is supported independently from the crystal puller receiving chamber. In particular, the pull head is mounted on a rigid frame which is supported by the same surface that supports the melt charge crucible. The pull head thereby can be aligned relative to the rigid frame, rather than to the receiving chamber, and can be accurately aligned with the crucible rotation axis and positioned in order to insure that its rotation axis is vertical. In one embodiment, the pull head is mounted on a plate which engages alignment pins attached to the rigid frame. The alignment pins insure proper alignment of the pull head relative to the frame. When the receiving chamber is raised to allow the crystal to be removed, the plate is engaged by the receiving chamber and lifted off the alignment pins so that the pull head moves with the receiving chamber.

Abstract: A single crystal pulling apparatus comprising: a gas tight container, a double crucible for storing a semiconductor melt inside the gas tight container comprising an outer crucible and an inner crucible which are connected at a lower edge, and source material supply means for adding source material to the semiconductor melt at a position between the outer crucible and the inner crucible, characterized in that a flow restriction member is provided inside the semiconductor melt region between the outer crucible and the inner crucible for restricting the flow of the semiconductor melt.

Abstract: A semiconductor single crystal lift device which comprises a crucible for melting materials for forming semiconductor single crystals and a radiation screen disposed at an upper portion of the crucible and formed of a reversed-cone-shaped adiabatic tube surrounding a lift zone, the apparatus being adopted for lifting up the semiconductor single crystal from a melt in the crucible, in which the radiation screen is divided into more than three adiabatic members, at least part of the adiabatic members being configured in a detachable fashion so that an adiabatic nature of the radiation screen can be partly altered.

Abstract: An apparatus and method for growing large diameter silicon crystals using the Czochralski (Cz) method, wherein the neck section of the crystal is significantly strengthened to eliminate the risk of breakage in the neck section, by providing a heat shield assembly which is located adjacent to the neck section and ascends in conjunction therewith to force the cooling gas directly onto the neck section of the silicon ingot.

Abstract: The methods and apparatus disclosed enable controlled growth of multicomponent metal oxide thin films, including high temperature superconducting (HTS) thin films, which are uniform and reproducible. The method and apparatus enable a controlled flow and pressure of a gaseous phase of metal containing molecules to be introduced into a reaction chamber, or into an analysis chamber, or into both. The flow into the reaction chamber enables deposition of metal oxides on a substrate and, therefore, growth of multicomponent metal oxide thin films, including HTS thin films, on the substrate. The flow into the analysis chamber enables compositional analysis of the gas. The apparatus also allows adjustment of the gaseous phase flow and pressure into the reaction chamber based upon the results of the compositional analysis. In one aspect of this invention, a heating mantle provides substantially uniform heating throughout the apparatus.