Abstract: A liquid-phase growth apparatus for growing a crystal on a substrate includes a crucible containing a solution that contains a raw material for forming the crystal, and a substrate holder for vertically holding the substrate. The substrate holder includes connectors, a receiving component, and a push component. The receiving component and the push component are opposite to each other and are connected by the connectors. The push component holds an upper portion of the substrate while the receiving component holds a lower portion of the substrate. The substrate holder containing the vertically held substrate is dipped into the solution. The receiving component ascends with buoyancy in the solution contained in the crucible, so that the substrate is now held securely and prevented from cracking due to thermal expansion.

Abstract: A crystal forming apparatus and method for using the apparatus, the apparatus including a plate and a film. The plate has a site adapted to hold a screening solution. The film is adjacent to the plate. The film seals the site and is adapted to contain a precipitant solution inside the site with an air gap between the screening solution and the precipitant solution. In a preferred embodiment, the film is transparent. In another preferred embodiment, the plate comprises a second transparent film supported by a lattice structure and the precipitant solution is sandwiched between the two films.

Abstract: A device includes an agitation tank, a liquid circulation means for circulating a liquid along a tank wall of the agitation tank, and at least one auxiliary heat transfer means provided inside the agitation tank, wherein the auxiliary heat transfer means is constantly put in a wetted state.

Abstract: A method for the production of a single crystal has the single crystal crystallizing from a melt and being subjected to a rotation with an alternating rotation direction. The single crystal is periodically rotated through a sequence of rotation angles, and the rotation direction is changed after each rotation through a rotation angle of the sequence, with a change of the rotation direction defining an inversion point on the circumference of the single crystal. There is at least one recurring pattern of inversion points created, in which the inversion points lie distributed on straight lines that are aligned parallel with the z-axis and are spaced apart uniformly from one another.

Abstract: A crystallization apparatus includes an illumination optical system to illuminate a phase shift mask and which irradiates an amorphous semiconductor film with a light beam having an intensity distribution of an inverse peak type having a smallest light intensity in a point corresponding to a phase shift portion of the phase shift mask to generate a crystallized semiconductor film. A convergence/divergence element is disposed on a light path between the illumination optical system and phase shift mask. The convergence/divergence element converts the light beam supplied from the illumination optical system into a light beam having an upward concave intensity distribution in which the light intensity is lowest in the phase shift portion and in which the light intensity increases as distant from the phase shift portion to irradiate the phase shift mask.

Abstract: A crystallization apparatus includes an illumination system which applies illumination light for crystallization to a non-single-crystal semiconductor film, and a phase shifter which includes first and second regions disposed to form a straight boundary and transmitting the illumination light from the illumination system by a first phase retardation therebetween, and phase-modulates the illumination light to provide a light intensity distribution having an inverse peak pattern that light intensity falls in a zone of the non-single-crystal semiconductor film containing an axis corresponding to the boundary. The phase shifter further includes a small region which extends into at least one of the first and second regions from the boundary and transmits the illumination light by a second phase retardation with respect to the at least one of the first and second regions.

Abstract: A melt level or the gap between a melt surface and a heat shield is measured accurately irrespective of how the melt surface is. A laser beam from a range-finding unit is reflected by a scanning mirror and projected on a melt surface through an entrance window and a quartz prism in a chamber of a puller. After specular reflection, the beam forms a measurement spot in the bottom of a heat shield and scatters. Part of the scatter, after specular reflection at the melt surface (secondary reflection), passes through the prism, the entrance window and the scanning mirror to the range-finding unit. The range-finding unit carries out triangulation using the distance between a laser source and a photodetector therein, and the angle of incidence and the angle of the received laser beam.

Abstract: The present invention has its object to make it possible to produce an ?-SiC wafer with stability and good reproducibility at low cost without using a seed crystal substrate that is expensive and less available. In each of crucibles 11a, 11b, 11c, and so on, a ?-SiC substrate 19 and an SiC raw material 17 are placed to face each other in close proximity. These crucibles are stacked in layers, and placed inside a radiation tube 40. The radiation tube 40 is heated by an induction heating coil 23, radiates radiation heat, and uniformly heats the crucibles 11a, 11b, 11c and so on. The SiC raw material in each of the crucibles is sublimated and recrystallized on a surface of the ?-SiC substrate 19.

Abstract: In the method for growing large-volume monocrystals crystal raw material is heated in a melting vessel with heating elements to a temperature above its melting point until a melt is formed. A monocrystal is then formed on the bottom of the melting vessel by lowering the temperature at least to the crystallization point. A solid/liquid phase boundary is formed between the monocrystal and the melt. The monocrystal grows towards the melt surface in a direction that is perpendicular to the phase boundary. A vertical axial temperature gradient is produced and maintained between the bottom of the melting vessel and its upper opening and heat inflow and/or heat outflow through side walls of the melting vessel is prevented, so that the solid/liquid phase boundary has a curvature radius of at least one meter. A crystal-growing device for performing this process is also described.

Abstract: A wafer cassette comprises a holding member having a depression corresponding to the shape of the substrate, and a cover having an opening smaller than the surface size of the substrate. The substrate is to be held in the depression by means of the holding member and the cover, and the substrate is to be covered at its one-side surface, side and all peripheral region of the other-side surface, with the holding member at its depression and with the cover at the edge of its opening. Also disclosed are a liquid-phase growth system and a liquid-phase growth process which make use of the wafer cassette.

Abstract: A silica glass crucible is produced by a) providing a porous amorphous silica glass green body, which is infiltrated with at least one substance that promotes crystallization of a silica glass crucible, b) drying the infiltrated silica glass green body, c) filling the green body with a metal or semimetal, and d) heating the filled green body for a period of from 1 h to 1000 h to a temperature of from 900 to 2000° C. to form at least a portion of silica crystalline phase. The process may be continued by further heating to melt the metal or semimetal and pulling a single crystal from the melt.

Abstract: There is provided an apparatus for preparing crystals of a phosphor precursor, comprising a reactor, a stirrer, and a supply pipe for supplying, into the reactor, a solution containing at least an aqueous solution of inorganic fluoride salt, wherein an ion concentration measuring device is provided in at least one of an interior of the reactor and a liquid contacting portion which contacts the solution containing an aqueous solution of inorganic fluoride salt.

Abstract: A production apparatus for producing a crystal includes a crucible divided into a plurality of stages, each stage containing a crystal precursor material, and a heater arranged to heat the crucible. The crucible has formed therein a degassing hole in a side wall portion thereof for discharging an impurity gas produced when refining the crystal precursor material by adding a scavenger thereto, and a lower portion of a first stage of the plurality of stages is positioned to cover an upper edge of a wall portion of a second stage of the plurality of stages. The overall height of the plurality of stages is 10 mm to 50 mm, the degassing hole has a diameter of 1 mm to 5 mm, and a fluoride crystal is formed from the crystal precursor material.

Abstract: An apparatus and method for forming at least a portion of an electronic device include a High Vacuum-Chemical Vapor Deposition (UHV-CVD) system and a Low Pressure-Chemical Vapor Deposition (LPCVD) system using a common reactor. The invention overcomes the problem of silicon containing wafers being dipped in HF acid prior to CVD processing, and the problem of surface passivation between processes in multiple CVD reactors.

Abstract: A liquid-phase growth process comprising immersing a base substrate in a solution containing reactant species to be grown dissolved therein which is accommodated in a crucible and growing a crystal film on said substrate, characterized in that a capping member is kept afloat on the surface of said solution before said substrate is immersed in said solution and said capping member is subsided in said solution upon immersing said substrate in said solution. A liquid-phase growth apparatus suitable for practicing said liquid-phase growth process.

Abstract: A low defect (e.g., dislocation and micropipe) density silicon carbide (SiC) is provided as well as an apparatus and method for growing the same. The SiC crystal, grown using sublimation techniques, is preferably divided into two stages of growth. During the first stage of growth, the crystal grows in a normal direction while simultaneously expanding laterally. Although dislocations and other material defects may propagate within the axially grown material, defect propagation and generation in the laterally grown material are substantially reduced, if not altogether eliminated. After the crystal has expanded to the desired diameter, the second stage of growth begins in which lateral growth is suppressed and normal growth is enhanced. A substantially reduced defect density is maintained within the axially grown material that is based on the laterally grown first stage material.

Abstract: A laser annealing apparatus for sequential lateral solidification (SLS) to uniformly crystallize silicon on an entire silicon substrate by minimizing the dislocation of the silicon substrate during laser beam irradiation is disclosed. During the laser annealing, a vacuum chuck holds the silicon substrate on a movable stage. The device includes a laser source, an optical system patterning the shape and energy of a laser beam irradiated from the laser source, a vacuum chuck supporting a silicon substrate, and a movable stage supporting the vacuum chuck as well as transferring the vacuum chuck in a predetermined direction. Accordingly, the apparatus improves the degree of crystallization because it is able to uniformly carry out SLS on an entire surface of the silicon substrate.

Abstract: In a method for growing a single crystal by bringing a seed crystal (4) into contact with a melt (2) of raw materials melted under heating in a crucible (1) a blade member (5) or a baffle member in disposed in the raw material melt (2) in the crucible (1) and a single crystal is grown by pulling up it with rotating the crucible (1) to thereby grow various single crystals including CLBO from the highly viscous raw material melt (2) as high quality and high performance crystals.

Abstract: Disclosed is a multilayer structured quartz glass crucible, for pulling up silicon single crystal, whose structure has at least three layers comprising: a translucent outer layer made of naturally occurring quartz glass and having a large number of pores, a translucent intermediate layer, made of synthetic quartz glass and having a large number of pores, and a transparent inner layer substantially free from pores and made of a synthetic quartz glass. Thermal convection within the silicon melt is suppressed by use of the quartz glass crucible, thereby preventing oscillation on the surface of the silicon melt. A method for producing the quartz glas crucible is also disclosed.

Abstract: A microfluidic device is provided that comprises: a card shaped substrate having first and second opposing faces; one or more microvolumes at least partially defined by a first face of the card shaped substrate; and one or more grooves at least partially defined by a second face of the card shaped substrate; wherein a lateral footprint of at least a portion of the one or more grooves overlaps with a lateral footprint of at least one of the one or more microvolumes.

Abstract: A crucible, which has first member and second cylindrical body, is disposed in a lower chamber. A pedestal is disposed inside the first member, and a seed crystal is fixed to the pedestal. A second heat insulator is provided between an inlet conduit and a crucible. A first heat insulator is provided at a halfway portion of the inlet conduit. With these heat insulators, a temperature gradient occurs in the inlet conduit at a portion thereof that is closer to the crucible. A mixture gas is introduced into the crucible. The mixture gas is heated up gradually when passing through the inlet conduit and is introduced into the crucible to form SiC single crystals in high quality.

Abstract: The invention relates to a roller guide for the guidance of the wire or rod between the finish rolling mill stands of a wire or rod rolling line, comprised of a guide roller pair (FR1; FR2) which are mutually juxtaposed and journalled on the free ends of the pivot arms (SA1; SA2) of double arm levers (DH). The lever journals (HL) are connected with a support body between the finish mill rolls of the rolling line and which receives a centering funnel (ZT) for the rolled wire or rod between the double arm levers (DH) whereby the pivotal displacement of the pivot arms (SA1; SA2) are settable and spring adjustable about the lever journals.

Abstract: The device according to the present invention comprises a furnace (10) provided with heating means allowing said material to be crystallised to be rendered liquid, then to be cooled until it progressively solidifies. The device also comprises reception means (20) of the material (21) disposed in the furnace, fixed relative to the furnace and situated such that the material is in the intermediary zone. The heating means (11, 12, 13) supply three heating zones: a hot zone (16), an intermediary zone (15) and a cold zone (14). Thermally conductive means (17) are disposed between the reception means (20) and the heating means (11, 12, 13) and extend from the cold zone as far as the hot zone.

Abstract: A method of forming a planar waveguide structure, comprising forming a first graded layer on a substrate, wherein the first graded layer comprises a first and a second optical material, wherein the concentration of the first optical material increases with the height of the first graded layer; forming a second graded layer on the first graded layer, the second graded layer comprising the first and second optical materials wherein the concentration of the first optical material decreases with the height of the second graded layer. The method further including forming a uniform layer on the first graded layer, the uniform layer containing first and second optical materials wherein the first optical material concentration is constant.

Abstract: A semiconductor manufacturing apparatus emits an energy beam for crystallizing a semiconductor film formed on a substrate. The apparatus can output a plurality of energy beams continuously in relation to time and move the energy beams to scan a target to be irradiated. The output instability of the energy beam is smaller than ±1%/h. The noise (optical noise) indicating the instability of the energy beam can be not more than 0.1 rms %.

Abstract: In order to pull semiconductor single crystals by the Czochralski method, quartz glass crucibles are used which require support crucibles having high temperature capabilities. Such support crucibles may be made of various materials, in which case graphite materials, carbon fiber-reinforced carbon (CFC), combinations thereof or carbon materials coated with silicon carbide (SiC) are used. The working life of a CFC support crucible can be extended by a partial thickening of the support crucible walls affected by corrosion processes.

Abstract: A matrix mixing robot includes a plurality of precision pumps (such as precision syringe pumps), a distributor and a processor system. Each pump, under the control of the processor system, draws an associated stock solution from a stock solution source, and pumps the drawn stock solution out through an outlet. The distributor, also under the control of the processor system, directs a stock solution from a particular pump outlet to a selected solution receptacle. A multi-port distribution valve may be associated with each precision pump. Each valve, under control of the processor system, can connect its associated pump to one the pump's inlets or outlets.

Abstract: An evaporation apparatus comprises an elongated crucible having an upper opening and storing an evaporation material, an electric heater which covers the upper opening of the elongated crucible, generates heat by causing electric current to flow therein for heating the evaporation material stored in the crucible, and has an opening through which the evaporation material which is vaporized by heating can pass through, and a fixing member for pressing and fixing the electric heater onto the elongated crucible. Further, between the fixing member and the electric heater, an angle member having surface portions respectively fitting onto an edge portion of the upper surface and an upper portion of the side surface of the elongated crucible is provided along the longitudinal direction of the elongated crucible. A pressing force from the fixing member is made to exert onto the electric heater via the angle member to bring the electric heater into close contact with the elongated crucible.

Abstract: An electric heater is placed so as to cover an upper opening of a crucible. Then, a plurality of angle members are disposed along the side portions of the electric heater and are pressed and fixed by clamps. The clamp includes, at its bottom, a curved portion formed by bending a plate-like spring member into a convex shape, and generates pressing force between the curved portion and corresponding claw portions at the upper edge, thereby clamping the crucible.

Abstract: An atomic layer deposition (ALD) reactor (13) is disclosed that includes a substantially cylindrical chamber (15) and a wafer substrate (22) mounted within the chamber (15). The ALD reactor (13) further includes at least one injection tube (14) mounted within the chamber (15) having a plurality of apertures (32) along one side that directs gas emanating from the apertures (32) towards the wafer substrate (22). While gas is pulsed from the injection tube (14), either the water substrate (22) or the injection tube (14) is continuously rotated in a longitudinal plane within the chamber (15) to ensure complete and uniform coverage of the wafer substrate (22) by the gas.

Abstract: A raw material feeder apparatus for industrial crystal growth systems includes a hopper disposed within a vacuum chamber and adapted to hold a quantity of raw material therein. A slide is disposed adjacent to an opening of the hopper and configured to receive the raw material from the hopper thereon. The slide is selectively moved between an open feeding position and a closed non-feeding position. The slide and a door cooperatively close the opening of the hopper, or in their open state, control the flow of raw material from the hopper. A vibrator associated with the slide feeds the raw material from the slide into an outlet tube for conveyance of the raw material to the crystal growth system.

Abstract: A method for manufacturing a silicon carbide single crystal includes the steps of: setting a substrate as a seed crystal in a reactive chamber; introducing a raw material gas into the reactive chamber; growing a silicon carbide single crystal from the substrate; heating the gas at an upstream side from the substrate in a gas flow path; keeping a temperature of the substrate at a predetermined temperature lower than the gas so that the single crystal is grown from the substrate; heating a part of the gas, which is a non-reacted raw material gas and does not contribute to crystal growth, after passing through the substrate; and absorbing a non-reacted raw material gas component in the non-reacted raw material gas with an absorber.

Abstract: The present invention relates to the use of a high intensity, in-line rotor-stator apparatus to produce fine particles via antisolvent, reactive, salting out or rapid cooling precipitation and crystallization.

Abstract: Silicon carbide single crystal is produced by allowing a silicon raw material to continuously react with a carbon raw material to generate gas, which reaches a seed crystal substrate on which a silicon carbide single crystal grows. Preferably, the silicon raw material is continuously fed onto the carbon raw material placed in a reaction crucible, and the carbon raw material is maintained at a temperature such that carbon is allowed to react with silicon in a molten state or a gaseous state to generate the reaction gas.

Abstract: Provided are a quartz glass crucible for pulling up a silicon single crystal, with which not only a defectless silicon single crystal can be pulled but a single crystallization ratio can greatly be improved and a production method therefor. The quartz glass crucible comprises a crucible body constituted of a semi-transparent quartz glass layer and a transparent quartz glass layer formed on the inner wall surface of the crucible bass body and no expanded bubbles equal to ro more than 0.5 mm in diameter are present in a layer 1 mm in depth from an inner surface of the quartz glass crucible after the silicon single crystal is pulled up using the quartz glass crucible.

Abstract: The invention relates to a device for depositing especially crystalline layers on an especially crystalline substrate, comprising a high-frequency heated substrate support from a conductive material on which the substrate is two-dimensionally supported, and which comprises a zone of higher conductivity. The system is specifically characterized in that the higher conductivity zone is associated with the surface of support of the substrate and substantially corresponds to the area occupied by the substrate. Further, the zone on which the substrate rests heats up more than the substrate surface surrounding the substrate.

Abstract: An IT-cut quartz crystal unit has a discoidal or a rectangular quartz crystal blank which is cut from a crystal of quartz along a plane perpendicular to the Y-axis of the crystal of the quartz which is rotated over approximately 34° about the X-axis, and further rotated from this rotated position over approximately 19° about the Z-axis. Excitation electrodes are formed on both main surface of the crystal blank, respectively. The crystal blank is held at positions in at least one set of opposing peripheral regions selected from an angular range of 18°±18° from the Z′-axis on the surface of the crystal blank, viewed from the center on the surface of the crystal blank; an angular range of 198°±18° from the Z′-axis; an angular range of 108°±18° from the Z′-axis; and an angular range of 288°±18° from the Z′-axis.

Abstract: An analytical furnace includes a predictive temperature control which is trained to model crucible temperature during analysis by employing a pair of temperature sensors, with one sensor being mounted in the furnace in fixed relationship and a second sensor which can be positioned within a crucible for training and tuning a crucible temperature profile, such that the crucible temperature in which a sample is placed is modeled and its response to the application of energy to the furnace in accordance with the furnace's dynamic thermal characteristics is known. By modeling the temperature profile within a crucible, the furnace can be controlled to provide a faster, more accurate analysis and prevent excessive overshooting of temperature as desired temperature plateaus are approached.

Abstract: It is the purpose of the present invention to prevent a macroscopic defect in the production of an SiC single crystal. SiC source material powder and an SiC seed crystal are disposed inside a graphite crucible, and the SiC source material powder is thermally sublimated and recrystallized on a front surface of the SiC seed crystal to grow an SiC single crystal. In this sublimation-recrystallization method, a protection layer is provided on a back surface of the SiC seed crystal. The SiC seed crystal is mechanically supported by a supporting part disposed on the graphite crucible without bonding. Thereby, it is possible to improve the thermal maldistribution on the back surface of the SiC seed crystal and possible to suppress damage of the protection layer due to the thermal maldistribution. Thus, macroscopic defects in the grown SiC single crystal are preferably suppressed.

Abstract: A pallet 1 for holding an FPC 9 in order to mount electronic components thereon includes a first adhesive holding region 21 in a peripheral portion and a second adhesive holding region 22 in a central portion. The first adhesive holding region 21 has a relatively low tackiness, whereas the second adhesive holding region 22 has a higher tackiness than that of the first adhesive holding region 21. The pallet 1 has through holes 31 for receiving push-up pins to be used when peeling off the FPC 9, and air outlets 32 for assisting in the peeling.

Abstract: The optical fluoride crystal treatment device of the invention includes a enclosure (12) separating the device from its external environment, heating means to heat and keep the internal volume (16) of said enclosure (12) at a predetermined temperature, at least one hollow platform (20) delimiting an internal chamber (22) whose upper wall (24) bears at least two independent diffusers (30) each delimiting a cavity (32) able to receive a unitary quantity (100) of said optical fluoride crystal substance, each of said cavities (32) communicating with said internal chamber (22) of the corresponding platform (20), a gas supply source containing said reactive gas, and means (50, 52, 54) for distributing said gas containing said reactive gas from said supply source to the inside of the internal chamber of each platform and having means (44) for regulating the pressure of said distributed gas.

Abstract: A device for the sublimation growth of an SiC single crystal, with foil-lined crucible. The device for producing an SiC single crystal includes a crucible with a crucible inner zone. Inside this zone, there is a storage area for storing a stock of solid SiC and a crystal area in which an SiC single crystal grows onto an SiC seed crystal. A heater device is arranged outside the crucible. On a side that faces the crucible inner zone, the crucible is lined with a foil of tantalum, tungsten, niobium, molybdenum, rhenium, iridium, ruthenium, hafnium or zirconium. As a result, the crucible is sealed and a reaction between the aggressive components of the SiC gas phase and the crucible wall is prevented.

Abstract: A method and apparatus for producing bulk single crystals of AlN includes a crystal growth enclosure with Al and N2 source material therein, capable of forming bulk crystals. The apparatus maintains the N2 partial pressure at greater than stoichiometric pressure relative to the Al within the crystal growth enclosure, while maintaining the total vapor pressure in the crystal growth enclosure at super-atmospheric pressure. At least one nucleation site is provided in the crystal growth enclosure, and provision is made for cooling the nucleation site relative to other locations in crystal growth enclosure. The Al and N2 vapor is then deposited to grow single crystalline AlN at the nucleation site.

Abstract: According to the present invention there is provided a body at least partially coated with one or more refractory layers of which at least one layer essentially consist of &agr;-Al2O3. Said &agr;-Al2O3 layer consists of essentially equiaxed grains with an average grain size of <1 &mgr;m and with a bimodal grain size distribution with coarser grains with an average grainsize in the interval 0.5-1 &mgr;m and finer grains with an average grainsize of <0.5 &mgr;m. The Al2O3 layer further contains striated zones containing titanium (>5 at %) but no nitrogen or carbon. This particular microstructure is obtained by temporarily stopping the gases needed for the growth of the Al2O3 layer and introducing TiCl4.

Abstract: To provide a device for refining a solid material and a process for refining it, whereby from the supply of the material to the operation for recovery of crystals can be carried out batch-wisely or continuously, and inclusion of foreign matters such as particles can be efficiently prevented. A device for refining an evaporable or sublimable solid material, which comprises a housing, and at least one rotatable roller for evaporation and at least one rotatable roller for precipitation, installed in the housing.

Abstract: A protein crystal growth assembly including a crystal growth cell and further including a cell body having a top side and a bottom side and a first aperture defined therethrough, the cell body having opposing first and second sides and a second aperture defined therethrough. A cell barrel is disposed within the cell body, the cell barrel defining a cavity alignable with the first aperture of the cell body, the cell barrel being rotatable within the second aperture. A reservoir is coupled to the bottom side of the cell body and a cap having a top side is disposed on the top side of the cell body. The protein crystal growth assembly may be employed in methods including vapor diffusion crystallization, liquid to liquid crystallization, batch crystallization, and temperature induction batch mode crystallization.

Abstract: The invention relates to a method and to a device for supporting a crystal ingot while pulling a single crystal, in particular such a crystal composed of silicon, according to the Czochralski method. To this end, a crystal support is provided which engages with a specialized bead, which is formed on the neck of the single crystal ingot and which has the shape of a bicone, by means of bearings in a housing. A support of the crystal ingot is thus achieved which may be disengaged at any time, and which has no disruptive effects on crystal growth and which acts independently of the length of the grown crystal. The bearings are moved into the support position on the bicone by a central pulling element which can be independently displaced relative to a second pulling element.

Abstract: A furnace for growing a high volume of crystals includes a plurality of individual growth stations and first and second heater matrixes. Each individual growth station has a crucible and an insulating container generally surrounding the crucible and thermally isolating the crucible from the other individual growth stations. The first and second heater matrices each include at least two legs electrically connected in parallel and each of the legs have at least two resistance heaters electrically connected in series. Each of the individual growth stations have at least one of the resistance heaters within the first heater matrix and at least one of the resistance heaters within the second heater matrix associated therewith. The resistance heaters of the first heater matrix are located above the crucibles and are preferably adapted to provide a homogeneous temperature across tops of the crucibles.

Abstract: A crucible 1 made of a C/C composite material for use in single crystal pulling, the crucible 1 having a lateral cylindrical portion 11 and a bottom portion 12 integrally formed as multiple layers wound by a filament winding method, in which the first layer 2 as the innermost crucible layer, among the multiple layers, is wound such that carbon fibers form tracks passing the polar point O at the bottom 12, the second layer 3 wound on the outer surface of the first layer 2 is wound along tracks to form a first outer circular bottom 8 that extends outwardly from about a middle part of a raised portion 6 where the carbon fibers of the first layer 2 are localized to the polar point O, and the third layer 4 and the succeeding layers wound on the outer surface of the second layer 3 are wound respectively along tracks to form outer circular bottoms that extend stepwise outwardly from about the middle parts of the outer surfaces of layers situated inside the respective layers, and the top for the raised portion of the

Abstract: It was an objective of the present invention to provide a susceptor which can prevent a increasing phenomenon of the dopant concentration of the epitaxial layer at the peripheral portion of the wafer. By providing a through-hole 7 passing through to a rear side at the outer peripheral side of the wafer inside the wafer pocket 6, a down flow of a reacting source gas from the upper surface of the susceptor 5 is formed, so that the unwanted flow of the dopant species being exhausted at the rear surface onto the wafer surface can be avoided. As a result, a raise in the dopant concentration at the outer peripheral portion of the epitaxial layer 9 can be controlled.