Abstract: A method of preparing a thermoelectric material includes the following steps. A thermoelectric raw material can be filled into a cavity of a first mold so that the thermoelectric raw material filled in the cavity has first and second dimensions. The first dimension can be defined in a first direction. The second dimension can be defined in a second direction. The second direction can be perpendicular to the first direction. The first dimension can be equal to or greater than the second dimension. The thermoelectric raw material filled in the cavity can be cooled in a uniaxial direction that is parallel to the second direction at a cooling rate of at least 600° C./min.

Abstract: A crystallization method includes the steps of melting a crystallized material in a crucible by heating, and growing a crystal by cooling and coagulating the melted material, wherein said melting step includes introducing a predetermined gas into the melted material.

Abstract: A crystal growth method for forming a semiconductor film, the method includes: while revolving one or more substrates about a rotation axis, passing raw material gas and carrier gas from the rotation axis side in a direction substantially parallel to a major surface of the substrate. The center of the substrate is located on a side nearer to the rotation axis than a position at which growth rate of the semiconductor film formed by thermal decomposition of the raw material gas is maximized.

Abstract: A solar power plant (10) capable of generating electricity comprising a light pipe carrying highly concentrated solar light (19), a hot reservoir (24), a cold reservoir (20), and a plurality of large-scale solid-state nano-structured photonic crystals (12) that are capable of recycling out-of-band photons with transition energies associated with a photovoltaic cell (13) into photons with in-band energies associated with the same photovoltaic cell (13) when photon energy is subjected to propagation through a thermal temperature gradient that is held across a suitably nano-structured photonic crystal (12). The input thermal photons from the hot thermal reservoir (24) are shifted in energy to the optimal photovoltaic cell energy for electron-hole pair generation by work that is expanded by the heat engine to convert said input photons into phonons and then back to photons again at a new wavelength through a process of phonon rethermalization occurring inside the nano-structured photonic crystal (12).

Abstract: A vapor phase growth apparatus and a vapor phase growth method improve the uniformity of film formed are provided. The vapor phase growth apparatus includes a chamber, a rotatable holder having a susceptor, an internal heater and an external heater which are arranged in the holder and heat the wafer from the bottom surface, an gas-pipe which is arranged to face the internal heater and sprays a cooling gas, and a temperature measuring unit which is arranged outside the chamber and measures the surface temperature of the wafer. In this manner, a position of a singular point of temperature which is an overheated portion generated on the wafer can be recognized. The singular point of temperature is locally cooled to make it possible to improve the uniformity of a temperature distribution in plane of the wafer.

Abstract: A tiled array of diamond plates, which is suitable for wafer scale processing, for example, in the manufacture of electronic or other device structures on the diamond plates. The diamond plates are fixed to a support layer, preferably a polycrystalline diamond support layer, in a substantially planar arrangement such that at least one of the major surfaces of the respective fixed diamond plates defines a fabrication surface that is exposed for further processing. The support layer may be a backing layer, in which case only one of the major faces of the diamond substrate is exposed for further processing, or may extend between respective diamond substrates such that both major surfaces are exposed for further processing.

Abstract: A pulling apparatus and a method with which especially heavy crystals (5) can be pulled using the Czochralski method utilizing the pulling apparatus. For this purpose the neck (4) of the crystal (5) has an enlargement (10) beneath which extends the support device. This device includes latches (7), which are moved from a resting position into an operating position in which the latches (7) extend beneath the enlargement (10). Each latch (7) is supported on the base body such that it is swivellable about a pivot axis (8) and can assume two stable positions, namely the resting position and the operating position. Each of these positions is defined by a stop on the base body. When the latch rests on the one stop, its center of gravity, viewed from the neck (4), is located on the other side of the pivot axis (8). When the latch rests on the other stop, the center of gravity is located on this side of the pivot axis (8).

Abstract: A system for producing cast components from molten metal. One form of the present invention includes a system for the precision pouring of molten metal within a casting mold. The precision pouring system is driven by a pressure differential.

Abstract: A method comprising the steps of continuously changing the concentrations in solution of a biomacromolecule to be crystallized and a precipitant, thereby constructing a crystal phase diagram containing a solubility curve, searching for optimum conditions of crystallization on the basis of the constructed crystal phase diagram, and performing efficient growth of the crystal of the biomacromolecule. Also disclosed is an apparatus for implementing the method.

Abstract: An apparatus for supporting a single crystal during Czochralski crystal pulling below a thickened crystal neck has lower bearing surface(s) with a central opening inscribable with a horizontal circle of diameter D1, centered on a vertical axis, the bearing surface(s) connected by connecting element(s) to minimally one securing element for securing to a crystal pulling lifting device, the connecting elements arranged to provide a clear-space in the region above the bearing surface(s) in which a circle of diameter D2 centered on the vertical axis (D2>D1) is inscribable over a length of the vertical axis. The unitary apparatus is useful for crystal ingot growth by immersion into the semiconductor melt prior to growth of a Dash neck and a thickening of the Dash neck. The apparatus is then raised to support the crystal by bearing against the bottom of the thickening.

Abstract: The device for production of a monocrystalline or a multicrystalline material blank, especially a silicon multicrystalline blank, using the VGF method has a crucible with a rectangular or square cross section. A flat heating device, especially a jacket heater, which generates an inhomogeneous temperature profile, is arranged around the crucible. This temperature profile corresponds to the temperature gradient formed in the center of the crucible. The heat output of the flat heating device decreases from the top to the bottom end of the crucible. The flat heating device includes parallel heating webs, which extend in a meandering course. The heat outputs from the heating webs differ according to their different conductor cross sections. To avoid local overheating in corner areas of the crucible, constrictions of the cross sections of the heating webs are provided at inversion zones of their meandering course.

Abstract: A crucible apparatus includes a hollow crucible body which is open at its upper and lower ends and a bottom plate which is formed separately from the crucible body and can close off the lower end of the crucible body. A space for receiving a molten material is formed by placing the crucible body atop the bottom plate. When molten material received in the space has solidified, the crucible body is raised off the bottom plate, and solidified material is pushed out of one end of the crucible body and removed from the crucible body.

Abstract: The present invention provides a method for the continuous production of semiconductor ribbons by growth from a linear molten zone. The creation of the molten zone is achieved by application of an electric current, direct or alternating, parallel to the surface of the ribbon and perpendicular to the direction of growth, and intense enough to melt the said material, preferably using electrodes of the said material. The molten zone is fed by transference of the material, in the liquid state, from one or more reservoirs, where melting of the feedstock occurs. Preferably, the said electrodes and the said reservoir(s) are only constituted by the said material, thus avoiding contamination by foreign materials. The present invention is applicable, for example, in the industry of silicon ribbons production for photovoltaic application.

Abstract: A consolidated vacuum sublimation module (VSM) can comprise an upper body portion, a middle body portion, a lower body portion, a bushing, and a seal. A vapor director cartridge can be loaded with a crude material and manually inserted into a cartridge-holding member of the lower body portion. Assembly of the middle and upper body portions form a structural unit that can compressively and sealably connect to the lower body portion. During sublimation, heat is effectively transferred to the lower body portion that contains the crude material. A substantial fraction of the middle body portion is conically tapered about a central longitudinal axis to promote desublimation. The middle body portion is a unitary structure that consolidates valving, cooling, and desublimation functions.

Abstract: Provided are a crucible which prevents polycrystal formation to easily allow growth of optical part material single crystals, and a single crystal growth method employing the crucible. The crucible has a smooth surface of about Rmax 3.2 s as the surface roughness of the wall surface 1H, concave curved plane 1J, cone surface 1F and convex curved plane 1L of the starting material carrying section 1D and the wall surface 1K of the seed carrying section 1E, which constitute the inner surface of the crucible of a crucible body 1A.

Abstract: A modification process of the synthetic quartz powder, which can make a quartz glass product hardly having bubbles at the time of fusing, is provided, along with a modification process of the synthetic quartz powder and a glass product using said modified quartz powder are provided, wherein the synthetic quartz powder is kept in helium atmosphere at least in the temperature falling process, when the amorphous synthetic quartz powder produced by the sol-gel method is carried out by heat treatment in a vacuum furnace at more than the degas temperature and less than the baking temperature, wherein the highest temperature in the helium atmosphere is preferably set to from more than 700° C. to less than 1400° C., and the helium atmosphere is kept to less than 400° C.

Abstract: A surface modified quartz glass crucible and a process for modifying the crucible includes a layer of a metal oxide on the whole or a part of the inside and/or outside of the crucible, and baking it. At least an inside surface of the crucible is coated with a said metal oxide of magnesium, calcium, strontium or barium. The coated layer of the crucible does not abrade easily and provides a high dislocation free ratio of silicon single crystals pulled by using the crucible.

Abstract: The present invention is a base material for forming a single crystal diamond comprising, at least, a seed base material of a single crystal and a thin film heteroepitaxially grown on the seed base material, wherein the seed base material is a single crystal diamond and the thin film is Iridium film or Rhodium film. As a result, there is provided a base material for forming a single crystal diamond that enables a single crystal diamond having a high crystallinity to be heteroepitaxially grown thereon and that can be reused repeatedly and a method for producing a single crystal diamond that enables a single crystal diamond having a high crystallinity and a large area to be produced at low cost.

Abstract: A configuration for producing a bulk SiC crystal includes a growing crucible having an electrically conductive crucible wall, an inductive heating device disposed outside the growing crucible for inductively coupling an electric current, which heats the growing crucible, into the crucible wall, and an insulation layer disposed between the crucible wall and the inductive heating device. The insulation layer is formed of a graphite insulation material having short carbon fibers with a fiber length in a range of between 1 mm and 10 mm and a fiber diameter in a range of between 0.1 mm and 1 mm. A method for producing a bulk SiC crystal is also provided.

Abstract: The present invention refers to an ammonobasic method for preparing a gallium-containing nitride crystal, in which gallium-containing feedstock is crystallized on at least one crystallization seed in the presence of an alkali metal-containing component in a supercritical nitrogen-containing solvent. The method can provide monocrystalline gallium-containing nitride crystals having a very high quality.

Abstract: A pressure source material is loaded into a space having constraint device 1, which is formed partly by optically transparent material 1a, 1b, and is disrupted under volume constraint. Light energy is externally supplied to the pressure source material constrained in the space through the optically transparent material by employing the device to apply light energy. The disruption of atomic bonds in the pressure source material is induced by heating the pressure source material above the boiling point thereof through the supplied energy. Exceptionally high pressures are generated in the space by the use of expansive forces arising from the disruption of atomic bonds. Such a configuration can implement ultrahigh pressure abilities that has not been achieved, so far.

Abstract: An edge ring for use in batch thermal processing of wafers supported on a vertical tower within a furnace. The edge rings are have a width approximately overlapping the periphery of the wafers and are detachably supported on the towers equally spaced between the wafer to reduce thermal edge effects. The edge rings have may have internal or external recesses to interlock with structures on or adjacent the fingers of the tower legs supporting the wafers or one or more steps formed on the lateral sides of the edge ring may slide over and then fall below a locking ledge associated with the support fingers. Preferably, the tower and edge ring and other parts of the furnace adjacent the hot zone are composed of silicon.

Abstract: A fused glass crucible includes a collar of doped aluminum silica that defines uppermost and outermost surfaces of the crucible. The melt line that defines the surface of molten silicon in the crucible may be substantially at the lower end of the collar or slightly above it. Crystallization of the collar makes it hard and therefore supports the remaining uncrystallized portion of the crucible above the melt line. The melt line may also be below the lower end of the collar, especially if the melt is drawn down or poured early in the process. Because there is little or no overlap or because the overlap does not last long, the doped aluminum collar is not damaged by the heat of from the melt.

Abstract: A crystal manufacturing apparatus for manufacturing a group III nitride crystal includes a crucible that holds a mixed molten liquid including an alkali metal and a group III metal; a reaction vessel accommodating the crucible in the reaction vessel; a heating device that heats the crucible with the reaction vessel; a holding vessel having a lid that is capable of opening and closing, accommodating the reaction vessel and the heating device in the holding vessel; a sealed vessel accommodating the holding vessel in the sealed vessel, having an operating device that enables opening the lid of the holding vessel for supplying source materials into the crucible and taking out a manufactured GaN crystal under a sealed condition, and closing the lid of the holding vessel that is sealed in the sealed vessel, the sealed vessel including an inert gas atmosphere or a nitrogen atmosphere; and a gas supplying device for supplying a nitrogen gas to the mixed molten liquid through each of the vessels.

Abstract: A highly pure, replaceable wear insert and a process for manufacturing the same use a group of materials which is suitable for meeting the requirements of high temperature semiconductor technology processes and is chosen at the same time for producing thin layers or components therefrom. The materials are compacted and purified at high temperatures in compression molds and the products so produced are put to their intended use. The substantially thin-walled and crucible-shaped, always highly pure components, which are predominantly made of expanded graphite, are employed as a wear insert for protecting graphitic support crucibles from reactive attack by quartz glass crucibles in semiconductor technology processes at temperatures above 500° C.

Abstract: An object of the invention is to carry out the flux method with improved work efficiency while maintaining the purity of flux at high level and saving flux material cost. The sodium-purifying apparatus includes a sodium-holding-and-management apparatus for maintaining purified sodium (Na) in a liquid state. Liquid sodium is supplied into a sodium-holding-and-management apparatus through a liquid-sodium supply piping maintained at 100° C. to 200° C. The sodium-holding-and-management apparatus further has an argon-gas-purifying apparatus for controlling the condition of argon (Ar) gas that fills the internal space thereof. Thus, by opening and closing a faucet at desired timing, purified liquid sodium (Na) supplied from the sodium-purifying apparatus can be introduced into a crucible as appropriate via the liquid-sodium supply piping, the sodium-holding-and-management apparatus, and the piping.

Abstract: An apparatus and method for processing materials in supercritical fluids is disclosed. The apparatus includes a capsule configured to contain a supercritical fluid, a high strength enclosure disposed about the capsule and a sensor configured to sense pressure difference between an interior and an exterior of the capsule. The apparatus also includes a pressure control device configured to adjust pressure difference of the capsule in response to the pressure difference sensed by the sensor. The apparatus further includes at least one dividing structure disposed within the capsule that divides the capsule into a seed growing chamber and a nutrient chamber.

Abstract: A crystal forming apparatus and method for using the apparatus, the method including depositing a precipitant solution in a site, incubating the site, during which time volatile vapor evaporates from the precipitant solution and accumulates in the site, and pumping the accumulated volatile vapor away from the site. An exemplary apparatus includes a sealed site except for a vent on the sealed site. In one embodiment, the vent is a passive vent that inhibits vapor diffusion out of the site. In another embodiment, the vent is an active vent that opens in response to a pressure differential. The present invention accelerates and controls the crystal growth process by pumping volatile vapor away from the sealed site.

Abstract: A method of forming a silicon carbon compound. A silicon source is introduced into an environment. Silicon particles are formed therefrom. One or more hydrocarbons are introduced into the environment separately from the silicon source, thereby forming one or more silicon carbon compounds. A dissociation enhancer may be introduced into the environment to minimize silicon particle size prior to it joining the hydrocarbon source.

Abstract: Disclosed herein is a cooling system for a chamber of an ingot growth apparatus. In the present invention, guide blades (180) are provided in a base plate (100) at positions adjacent to unevenly curved parts of a guide line (170), which is the base plate (100), and along which cooling water flows. Furthermore, guide blades (360) are provided in a lid (300) at positions adjacent to ports, which are provided in the lid (300) and interfere with the flow of cooling water. As such, in the present invention, the guide blades are provided in the base plate (100) and the lid (300), which define the chamber, at positions at which cooling water creates stationary vortices, thus solving a problem of water stagnation, thereby increasing a cooling effect.

Abstract: An object of the invention is to provide a quartz glass crucible reduced in the generation of vibration occurring on the surface of a silicon melt and free from the generation of rough surface and cristobalite spots, yet capable of pulling up single crystal silicon stably and at high yield even in long-term operations; it is also an object to provide a method for producing the same. In a quartz glass crucible for pulling up single crystal silicon comprising a crucible base body having a bottom part and a straight shell part with an inner layer provided to the inner surface thereof, the quartz glass crucible is characterized by that said inner layer comprises a synthetic quartz glass layer from the lowest end to at least a height of 0.25 H; a naturally occurring quartz glass layer or a mixed layer of naturally occurring quartz glass and synthetic quartz glass extended in a range of from at least 0.5 H to 0.

Abstract: A method for manufacturing a single crystal of nitride by epitaxial growth on a substrate appropriate for the growth of the crystal. The substrate includes, deposited on the edges of its growth surface, a mask appropriate to prevent growing of the single crystal on the edges of the substrate.

Abstract: There is disclosed a PBN container in which a conductive film is deposited on a surface of a body formed by depositing PBN (pyrolytic boron nitride), wherein, at least, an angle between a PBN cut face of the body and at least one wall surface adjacent to the PBN cut face is 20°-80°, and a method for producing a PBN (pyrolytic boron nitride) container comprising at least steps of depositing PBN to form a body, processing a PBN cut face of the formed body so that at least, an angle between the PBN cut face and at least one wall surface adjacent to the PBN cut face is 20°-80°, and coating a surface of the processed body with a conductive film. Thus, there can be provided a PBN container excellent in durability where a conductive film is laminated on a surface of a body formed by depositing PBN, and a method for producing the PBN container.

Abstract: The present invention provides methods, systems, and apparatus for epitaxial film formation that includes an epitaxial chamber adapted to form an epitaxial layer on a substrate; a deposition gas manifold adapted to supply at least one deposition gas and a carrier gas to the epitaxial chamber; and an etchant gas manifold, separate from the deposition gas manifold, and adapted to supply at least one etchant gas and a carrier gas to the epitaxial chamber. Numerous other aspects are disclosed.

Abstract: The invention relates to the production of a cable rotating head, which is devoid of an abrasion ring, for a Czochralski-crystal drawing system which is used to drive a drawing cord in an azimuthal and vertical manner and the nucleus of a crystal is fixed therein. According to the invention, the cord rotating head comprises a cord winding mechanism which can be supported by a vertical hollow shaft, through which the drawing cord is suspended in the crystal drawing system, and the cord rotating head is rotationally mounted about the axis thereof and can be offset by a rotation motor, which is secured to the crystal drawing system, together with the cord winding mechanism and the drawing cord in a rotational movement, and said vertical hollow shaft is surrounded in a coaxial manner by a double toothed gear which is rotationally mounted opposite to the hollow shaft and can be driven by a drawing motor which is secured to the crystal drawing system.

Abstract: The invention concerns a device (10) for forming in single-crystal state a compound body with incongruent evaporation, capable of being in monocrystalline or polycrystalline form, comprising at least one first chamber (20) containing a substrate (42) whereat is formed a polycrystalline source of said body and a monocrystalline germ (46) of said body; a second chamber (14), said substrate being arranged between the two chambers; means for input (36) of gaseous precursors of said body into the second chamber capable of bringing about deposition of said body in polycrystalline form on the substrate; and heating means (26) for maintaining the substrate at a temperature higher than the temperature of the germ so as to bring about sublimation of the polycrystalline source and the deposition on the germ of said body in monocrystalline form.

Abstract: A method for growing a crystal of an Al-containing III-V group compound semiconductor by the conventional HVPE method, characterized in that it comprises a step of reacting Al with hydrogen halide at a temperature of 700° C. or lower to form a halide of Al. The method has allowed the suppression of the formation of aluminum chloride (AlCl) or aluminum bromide (AlBr) reacting violently with quartz, which is the material of a reaction vessel for the growth, resulting in the achievement of the vapor phase growth of an Al-containing III-V group compound semiconductor at a rate of 100 microns/hr or more, which has lead to the mass-production of a substrate and a semiconductor element having satisfactory resistance to adverse environment.

Abstract: A SiC single crystal is produced by the solution growth method in which a seed crystal attached to a seed shaft is immersed in a solution of SiC dissolved in a melt of Si or a Si alloy and a SiC single crystal is allowed to grow on the seed crystal by gradually cooling the solution or by providing a temperature gradient therein. To this method, accelerated rotation of a crucible is applied by repeatedly accelerating to a prescribed rotational speed and holding at that speed and decelerating to a lower rotational speed or a 0 rotational speed. The rotational direction of the crucible may be reversed each acceleration. The seed shaft may also be rotated synchronously with the rotation of the crucible in the same or opposite rotational as the crucible. A large, good quality single crystal having no inclusions are produced with a high crystal growth rate.

Abstract: An improved system based on the Czochralski process for continuous growth of a single crystal ingot comprises a low aspect ratio, large diameter, and substantially flat crucible, including an optional weir surrounding the crystal. The low aspect ratio crucible substantially eliminates convection currents and reduces oxygen content in a finished single crystal silicon ingot. A separate level controlled silicon pre-melting chamber provides a continuous source of molten silicon to the growth crucible advantageously eliminating the need for vertical travel and a crucible raising system during the crystal pulling process. A plurality of heaters beneath the crucible establish corresponding thermal zones across the melt. Thermal output of the heaters is individually controlled for providing an optimal thermal distribution across the melt and at the crystal/melt interface for improved crystal growth. Multiple crystal pulling chambers are provided for continuous processing and high throughput.

Abstract: A liquid-phase growth apparatus for growing a crystal on a substrate includes a crucible containing a solution that contains a raw material for forming the crystal, and a substrate holder for vertically holding the substrate. The substrate holder includes connectors, a receiving component, and a push component. The receiving component and the push component are opposite to each other and are connected by the connectors. The push component holds an upper portion of the substrate while the receiving component holds a lower portion of the substrate. The substrate holder containing the vertically held substrate is dipped into the solution. The receiving component ascends with buoyancy in the solution contained in the crucible, so that the substrate is now held securely and prevented from cracking due to thermal expansion.

Abstract: A method that provides for a phase conjugate mirror 10 having a gallium-arsenide substrate 11 with a generally cubic crystalline lattice and a number of gallium-arsenide crystal projections 14 extending from said substrate 11, the projections each having three generally planar surfaces 15, 16, 17, where the surfaces each being generally obliquely oriented with respect to a plane of said substrate 11, the plane substantially corresponding to a (111) crystal face, the projections 14 being oriented along the plane 13 to provide a predetermined corner-cube array pattern 10, the device including a number of implant sites 25 spaced apart from one another along the substrate 11 to define a pattern 40, and forming a number of corner-cubes articles having a shape substantially corresponding to the corner-cube array 10 pattern 40, wherein the articles each have a number of cube-corner projections 14 spaced apart from each other by a minimum distance of 1 micron.

Abstract: System for controlling crystal growth in a Czochralski crystal growing apparatus. A magnetic field is applied within the crystal growing apparatus and varied to control a shape of the melt-solid interface where the ingot is being pulled from the melt. The shape of the melt-solid interface is formed to a desired shape in response to the varied magnetic field as a function of a length of the ingot.

Abstract: An apparatus for growing bulk GaN and AlGaN single crystal boules, preferably using a modified HVPE process, is provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth to achieve n-, i-, or p-type conductivity. In order to have growth cycles of sufficient duration, preferably an extended Ga source is used in which a portion of the Ga source is maintained at a relatively high temperature while most of the Ga source is maintained at a temperature close to, and just above, the melting temperature of Ga. To grow large boules of AlGaN, preferably multiple Al sources are used, the Al sources being sequentially activated to avoid Al source depletion and excessive degradation.

Abstract: An apparatus and method for producing a crystalline ribbon continuously from a melt pool of liquid feed material, e.g. silicon. The silicon is melted and flowed into a growth tray to provide a melt pool of liquid silicon. Heat is passively extracted by allowing heat to flow from the melt pool up through a chimney. Heat is simultaneously applied to the growth tray to keep the silicon in its liquid phase while heat loss is occurring through the chimney. A template is placed in contact with the melt pool as heat is lost through the chimney so that the silicon starts to “freeze” (i.e. solidify) and adheres to the template. The template is then pulled from the melt pool thereby producing a continuous ribbon of crystalline silicon.

Abstract: A crystallization apparatus includes an illumination system which illuminates a phase shifter having a phase shift portion, and irradiates a polycrystal semiconductor film or an amorphous semiconductor film with a light beam having a predetermined light intensity distribution in which a light intensity is minimum in a point area corresponding to the phase shift portion of the phase shifter, thereby forming a crystallized semiconductor film, the phase shifter has four or more even-numbered phase shift lines which intersect at a point constituting the phase shift portion. An area on one side and an area on the other side of each phase shift line have a phase difference of approximately 180 degrees.

Abstract: A cooling structure for the body of a crystal-growing furnace includes an upper body and a lower body. The upper body includes an outer upper shell and an inner upper shell, wherein an upper enclosing space is formed between the outer upper shell and the inner upper shell. The lower body includes an outer lower shell and an inner lower shell, wherein a lower enclosing space is formed between the outer lower shell and the inner lower shell. A plurality of water pipes are arranged, respectively, around the upper and the lower enclosing spaces, wherein plural spraying holes are provided on each of the water pipes. With the help of a pump, water from an outside water source is drawn through the spraying holes of the water pipes so as to cool down the body of the crystal-growing furnace. In adding an exhaust fan, warm air in the upper enclosing spaces can be driven out speedily.

Abstract: A single crystal pulling apparatus having a heater 4 melting material silicon by thermal radiation from a cylindrical exothermic part 4a which surrounds a crucible 3 inside a furnace body 2 and an electromagnet 13 which is prepared to surround the furnace body 2 and applies a transverse magnetic field to the silicon liquid melt in the crucible 3 is provided. A length h in a pull-up axis direction in the exothermic part 4a of the heater 4 is arranged to be 0.5 times to 0.9 times an inner diameter of the crucible 3, a first middle position in the pull-up axis direction in the exothermic part 4a is arranged below a second middle position in the pull-up axis direction in the electromagnet 13, and a distance difference d between the first and second middle positions is 0.15 times to 0.55 times the inner diameter R of the crucible 3.

Abstract: In some embodiments, an apparatus configured to grow a single crystal includes a support configured to carry the single crystal. The support includes an end portion having variable widths along a length of the support. The apparatus can be used to grow, for example, large, high quality single crystals of ice in a short amount of time.

Abstract: A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.

Abstract: A crucible holding member includes a mesh body which includes a plurality of strands woven each including a plurality of carbon fibers. The mesh body has a triaxial weave structure including a plurality of first strands, a plurality of second strands and a plurality of third strands. The plurality of first strands are provided in a first direction inclined at a first angle with respect to a central axis of the mesh body. The plurality of second strands are provided so that the plurality of first strands and the plurality of second strands are substantially symmetrical with respect to the central axis. The plurality of third strands are provided substantially along the central axis. A matrix is filled in interstices between the carbon fibers.