Abstract: A kit for bathing a patient or for personal bathing includes a sealed polyethylene bag containing a plurality of cloths impregnated with a cleansing solution. The cloths are a needle-punched blend of cotton and cellulose acetate for softness and low cost. Furthermore, an anti-microbial agent is carried by the cellulose acetate to prevent the growth of bacteria, yeast and fungus and the package carries another anti-microbial solution as a preservative. The cleansing solution is a non-ionic, non-rinsing mixture of surfactants, emollients or humectants, vitamin E and de-ionized water. The kit is heated and then each cloth is used on a different part of the body and disposed of after use to prevent cross contamination.

Abstract: In a method for cleaning a surface of a substrate an amount of a solution is applied on a surface of the substrate. After the solution is applied on the surface, crystallization of the solution is initiated to form a liquid-crystal mixture. Once the liquid-crystal mixture is formed, relative motion between the liquid-crystal mixture and the substrate is created to dislodge contaminants adhered to the substrate. In one alternative method, the solution is applied on a pad. In another alternative method, the substrate is place in a bath of the solution. A wafer cleaning module also is described.

Abstract: A method for removing products of hot corrosion and oxidation from selective portions of surfaces of a gas turbine engine, such as coatings and substrates, following exposure of the surfaces to hot oxidative gases of the turbine exhaust. The method involves a high temperature chemical reaction and has no detrimental effect on adjacent coatings and substrates that have not been attacked by the hot exhaust gases.

Abstract: An apparatus for surface treating a semiconductor wafer includes a surface treatment chamber and a source of radiation. The semiconductor wafer disposed inside the c amber is illuminated with radiation sufficient to create a plurality of electron-hole pairs near the surface of the wafer and to desorb ions and molecules adsorbed on the surface of the wafer.

Abstract: A surface of an article of stainless steel becomes to have increased corrosion resistance by treatment with a heated aqueous hydroxylamine salt solution.

Abstract: A substrate processing apparatus (1) for processing wafers (W) has a first processing chamber (2) capable of containing the wafers (W) and a second processing chamber (4) capable of containing the wafers (W). The second processing chamber (4) is formed below and near the first processing chamber (2) and is capable of communicating with the first processing chamber (2). A wafer guide (6) carries the wafers (W) vertically between the first and second processing chambers (2, 4). A shutter (7) is opened to allow the first and second processing chambers (2, 4) to communicate with each other and is closed to isolate the same from each other. A steam supply system (8) including steam supply port, an ozone gas supply system (9) including ozone gas supply port and an IPA supply system (10) including IPA supply port are combined with the first processing chamber (2).

Abstract: A large tumbling device into which broken pieces of labeled glass such as beverage bottles, or cullet, are fed. After entering the interior chamber of the tumbler, the cullet is carried by a plurality of interior fins along the inside circumference of the tumbler to a point where the glass falls back to the low point of the tumbler. During this fall, the cullet passes through a flame generated in the interior cavity of said tumbler. The glass is heated to a temperature well below 600 degrees Fahrenheit (the temperature at which the molecular structure of glass begins to change) therefore ensuring that the processed glass retains its original properties. This process is repeated numerous times, ensuring that all of the foreign material is removed, before the cullet passes through the entirety of the chamber and is cooled to be processed into the desired grades.

Abstract: A method of stripping cured paint from reject painted production parts, aluminum and galvanized safe, comprising: a) adding a stripping composition to a strip tank, said stripping composition consisting an alkanolamine, a fatty acid and a surfactant; b) immersing said reject painted part in said strip tank containing said stripping composition; and c) heating said stripping composition to 300 degrees F. for approximately 1-hour, wherein cured paint is removed from said reject painted part with no attack on the base metal substrate.

Abstract: A method of removing graphite from metal molds used in the glass fabrication industry, the method including placing a metal glass-fabricating mold with graphite bonded thereto in a chamber, providing an oxygen rich mixture of combustible gases in the chamber, said oxygen rich mixture containing from about 10 to about 25% stoichiometric excess of oxygen, and igniting the oxygen rich mixture of combustible gases in the chamber to produce a temperature of at least about 6,000° F. and a pressure wave. A high temperature wave front and the pressure wave thereby produced remove graphite from the metal mold by ablation of the graphite.

Abstract: A method for removing contaminant compounds respectively having a benzene ring therein from the surface of an Si layer, the method containing enter a step for causing the Si layer to contact with the air, oxygen or ozone under a heated condition or a step for causing the Si layer to contact with a mixture of sulfuric acid and hydrogen peroxide or a mixture of pure water and ozone. The method can be applicable to methods for providing a field effect transistor.

Abstract: A process for selectively deleading a plumbing component made of a lead-containing copper alloy. The process comprises traditional pickling the component, washing the component, dipping the component in a deleading bath comprising at least one carboxylic acid selected from the group consisting of formic acid, acrylic acid, propionic acid and butyric acid and traditionally finishing the component.

Abstract: A process and apparatus for drying semiconductor wafers, includes the controlled-rate extraction of a wafer immersed in rinsing liquid, irradiation of the wafer using high intensity lights or filaments along the wafer-liquid interface, and delivery of gas streams against the wafer along the wafer-liquid interface using a gas delivery system. Heating is controlled to create a temperature gradient without evaporating rinsing fluid adhering to surfaces of the wafer. Heating by the radiation sources creates a temperature gradient in the wafer in the irradiated region that simultaneously generates a surface tension gradient in the water adhering to the wafer. The gas delivery system removes the bulk of the water adhering to the wafer surface, and also suppresses the height of the rinsing liquid adhering to the wafer, providing faster extraction of dry and highly clean wafers from the rinsing liquid. A solvent vapor is optionally injected at the wafer-liquid interface, to reduce adhesion of the liquid to the vapor.

Abstract: In a method for in situ cleanup of soil contaminated with a pollutant, a micro-emulsion containing an oil component with triglycerides, or essential oils or fatty acid esters or mixtures thereof, and a surfactant component of one or more branched or multi-chain anionic surfactants is used for pollutant extraction. The extraction of pollutant from the contaminated soil is carried out at a temperature range of 0° C. and 200 ° C. The oil component of the micro-emulsion contains one or more triglycerides or fatty acid esters in amounts ≧5% by weight and less than 50% by weight, one or more dialkyl sulfosuccinic acid compounds as an anionic surfactant, and one or more branched, multi-chain or multi-chain branched non-ionic surfactants. The anionic and non-ionic surfactants are present in the micro-emulsion in an amount of ≦30% by weight.

Abstract: A waste object containing oil has a first opening formed therein at an upper portion thereof and a second opening positioned below the first opening. The first and second openings are connected to a recovery tank. Hot water of a predetermined temperature is held in the recovery tank and is caused to accumulate inside the waste object via the second opening. Oil that has floated upwards is recovered in the recovery tank via the first opening.

Abstract: Disclosed is a method for decontaminating PCB-containing transformers to obtain treated transformers containing less than 50 parts per million (ppm) polychlorinated biphenyls (PCB). The transformer is initially drained of all PCBs, then the core/coil assembly is removed. The internal surfaces of the transformer are then cleaned using a solvent. Finally, a new core/coil assembly is installed. The method is simple and can be completed within a substantially shorter period of time than methods known in the art.

Abstract: A method for unblocking a vacuum collet channel clogged with solder includes moving a solder-clogged collet into contact with a preform of solder, and melting the solder clog and the preform into a single melted mass, cooling the melted mass to solidify it, and moving the collet away from the cooled mass, leaving the clog behind.

Abstract: An image forming material formed on a paper sheet and containing a color former, a developer and a decolorizer, is decolored by heating of the image forming material, contacting the image forming material with a solvent optionally containing a decolorizer, and removing a residual solvent from the paper sheet.

Abstract: A method of removing a ceramic coating, such as a thermal barrier coating (TBC) of yttria-stabilized zirconia (YSZ), from the surface of a component, such as a gas turbine engine component. The method generally entails subjecting the ceramic coating to an aqueous solution of ammonium bifluoride, optionally containing a wetting agent, such as by immersing the component in the solution while maintained at an elevated temperature. Using the method of the invention, a ceramic coating can be completely removed from the component and any cooling holes, with essentially no degradation of the bond coat.

Abstract: A substrate treatment process is disclosed to remove organic matter existing on a substrate such as a wafer, glass substrate or ceramic. The process comprises treating the substrate with ozone water and then with hydrogen water, or treating the substrate with ozone-hydrogen water or treating the substrate with ozone water and hydrogen water at the same time. A substrate treatment apparatus is also disclosed for a substrate. The apparatus comprises a treatment vessel, a substrate holder for rotating the substrate in a horizontal plane in the treatment vessel, a nozzle unit arranged in an upper part of the treatment vessel such that a liquid is downwardly fed, a feed line for feeding the liquid to the nozzle unit, and a chamber enclosing therein the apparatus in its entirety.

Abstract: A method of removing a ceramic coating (18), and particularly zirconia-containing thermal barrier coating (TBC) materials such as yttria-stabilized zirconia (YSZ), that has been either intentionally or unintentionally deposited on the surface of a component (10). The method entails subjecting the ceramic coating (18) to an aqueous solution containing an acid fluoride salt, such as ammonium bifluoride (NH4HF2) or sodium bifluoride (NaHF2), and a corrosion inhibitor. The method is capable of completely removing the ceramic coating (18) without removing or damaging the underlying substrate material, which may include a metallic bond coat (16).

Abstract: A method for removing carbon from utensils includes filling a tank with a batch of carbon removing solution for removing carbon from utensils, heating the solution prior to and/or during soaking of the utensils, soaking the utensils in the tank filled with carbon removing solution for a period from 2 to 24 hours, reusing the same batch of carbon removing solution for multiple soaking treatments until the effectiveness of the solution has deteriorated, automatically emptying the batch of carbon removing solution from the tank to waste, and refilling the tank with a fresh batch of carbon removing solution.

Abstract: A heated high pressure air and/or a high pressure water are spouted through nozzles. Therefore, the coated layer is removed without crushing the bumper unlike in the conventional method, and therefore, a plurality of process steps can be skipped. Thus the bulk of the apparatus can be reduced, the operating cost can be lowered, and the environment can be protected. The method for removing a coated layer includes the step of installing a bumper to be subjected to a removal of the coated layer. Then the coated layer is removed from the bumper by spouting water and/or a pre-heated air to the bumper. Then the bumper is carried to a predetermined psition after removing the coated layer, and then the bumper is detached. The apparatus includes an installing/detaching means for installing/detaching the bumper to be subjected to a removal of the coated layer.

Abstract: A fluid delivery system For delivering a process fluid to a vacuum processing system includes a secondary containment line surrounding a process fluid line. A purge gas flows through the secondary containment line and around the process fluid line in order to flow away any leaked process fluid. Alternatively, a heated fluid flows through the secondary containment line forming a heat trace around the process fluid line to heat the process fluid line and the process fluid by means of convection, which provides for precise uniformity of temperature throughout the length of the secondary containment line. The heated fluid loses heat to the ambient environment creating a temperature gradient through which the process fluid flows. The secondary containment line may have a heating element along its length for adding heat to the heated fluid to change the temperature gradient.

Abstract: A method is disclosed for removing pad nodules. The method provides a wafer comprising pads and pad nodules which are formed on said pads, wherein said pads are made from a metal selected from the group consisting of aluminum and an aluminum-copper alloy. Then, the method dips the wafer into deionized water for removing the pad nodules. Thereafter, the method spin-dries the wafer and coats an alkaloid developer on the wafer for further removing the pad nodules. Finally, the method removes the alkaloid developer from the wafer and bakes the wafer.

Abstract: A method is disclosed for removing impurities from an elastomer intended for medical or pharmaceutical use, which includes a step of performing a first solvent extraction process on the elastomer by contacting the elastomer with a first extracting solvent in a non-supercritical state to substantially remove impurities from the elastomer, thereby leaving a residue of said first extracting solvent in the elastomer. The elastomer is there after subjected to a second solvent extraction process, by contacting the elastomer with a second extracting solvent, which is a supercritical fluid or a mixture of super critical fluids, in order to remove substantially reduce the concentration of the residue of the first extracting solvent remaining in the elastomer after the first solvent extraction process.

Abstract: A process for descaling, derusting, dissolving, and removing machining lubricants coated on steel and other iron alloy objects, the process comprising the steps of: (a) providing an alkaline cleaning solution consisting of: water; about 2.5% to 25% by weight of a water-soluble alkali; about 2% to 8% by weight of sodium gluconate; about 5% to 20% by weight of sodium xylene sulfonate; and about 2% to 20% by weight of a water-soluble surfactant consisting of C9-C11 alcohol ethoxylates and 6 ppm of ethylene oxides; and (b) contacting the soiled object with the alkaline cleaning solution at a temperature of about 60° F. to 200° F. for about 3 to 30 minutes, wherein the object is descaled, derusted, and the machining lubricant is dissolved and removed.

Abstract: A cleaning gas is supplied into a processing chamber defined by a processing vessel included in a film forming system, and the temperature of a gas contained in the processing vessel is measured continuously for a predetermined time by a gas temperature measuring means disposed in the processing vessel. The temperature measured by the gas temperature measuring means rises gradually while the cleaning gas flowing through the processing chamber is reacting with an unnecessary film deposited on the surfaces of the processing vessel. A cleaning operation terminating point is determined on the basis of the time-varying measured temperature of the gas measured by the gas temperature measuring means. Preferably, the cleaning operation terminating point determining means determines that the cleaning operation is to be terminated at a time point a certain time after the variation of the measured temperature past a peak.

Abstract: An apparatus for surface treating a semiconductor wafer includes a surface treatment chamber and a source of radiation. The semiconductor wafer disposed inside the chamber is illuminated with radiation sufficient to create a plurality of electron-hole pairs near the surface of the wafer and to desorb ions and molecules adsorbed on the surface of the wafer.

Abstract: A chemical delacquering composition, process and system for delacquering substrates such as aluminum scrap in which an aqueous solution containing at least one short-chain organic acid, preferably a mixture of two short-chain organic acids, and optional components such as surfactants, are contacted onto the substrate(s) with application of heat and agitation. The invention embraces the use of one or more organic acids (carboxylic acids) having a total of 2-12 carbons, preferably 3-8 carbons. Concentration of organic acid by weight ranges from about 0.5-8% per at least one organic acid, or preferably 2-4% for each organic acid component assuming two organic acid components are present. In the preferred embodiment of the invention, about 2-4% each of citric and lactic acids are present in the delacquering composition. Processing temperatures range from 160-212° F., preferably 180-212° F., and most preferably 185-212° F.

Abstract: The invention provides a treating process and system using a chemical treating liquid, which enables uniform treatments to be carried out within a reduced period of time. A heating tube is used to heat a fluid passing therethrough by irradiation of the fluid with microwaves. A pressurizer is provided upstream of the heating tube, and a throttle valve is provided downstream of the heating tube, so that the boiling of the fluid is prevented by activating the pressurizer to increase the internal pressure of the heating tube. A mixer comprising opposite nozzles is provided to jet fluids from the nozzles for collision with each other, so that the fluids are uniformly mixed. The treating process and system are suitable for semiconductor unit production.

Abstract: In a method for cleaning a copper surface of a semiconductor wafer or article, nitrogen gas is bubbled or dissolved into a strong alkaline solution, displacing dissolved oxygen from the solution. A nitrogen gas environment is provided over the copper surface. The alkaline solution is then applied to the copper surface. The copper etch rate is greatly reduced. The method is useful in removing residual polishing slurry after a chemical-mechanical polishing step, and for removing residues left in via holes after plasma etching.

Abstract: A method and an apparatus for manufacturing a semiconductor integrated circuit in which semiconductor elements (2) and a wiring structure connecting the semiconductor elements (2) one another are located on a semiconductor substrate (1). In the method or apparatus, a series of wiring elements (4,6,7,9,10), each of which constructs the wiring structure is formed sequentially, then the semiconductor integrated circuit under manufacturing process is washed by neutral solution containing oxidant during the process of forming of the wiring elements (4,6,7,9,10).

Abstract: A cleaning method to inhibit the adhesion of micro particles to a member to be cleaned by decreasing an amount of generation of bubbles. In a method for cleaning a member to be cleaned by dipping the member into a cleaning bath to which a hydrochloric acid-hydrogen peroxide mixture comprising hydrochloric acid, hydrogen peroxide and water is supplied through a filter and a supplying port; the improvement is that a temperature of the hydrochloric acid, hydrogen peroxide mixture is controlled within the range of 20°to 45° C.

Abstract: In a method for cleaning up an inner wall surface of a pipe of a semiconductor device fabricating machine, the pipe is heated while supplying a cleaning gas obtained by adding 1% to 5% of O2 gas to a high-purity Ar, into the pipe. Since Ar having a large molecular size is used, the organic matters within the pipe are expelled and blown away by Ar, and then, are discharged together with the cleaning gas to the outside of the pipe. In addition, since the organic matters are burnt by the added 1% to 5% of O2 within the pipe being heated, the organic matters are converted into CO, CO2 and H2O, which are discharged together with the cleaning gas to the outside of the pipe. As a result, the organic matters within the pipe can effectively removed.

Abstract: A method of removing a thermal barrier coating from cooling holes in the surface of a component designed for use in a hostile thermal environment, such as the turbine, combustor and augmentor sections of a gas turbine engine. The method is particularly suited for completely removing a thermal insulating ceramic layer of a thermal barrier coating system that includes a metallic bond coat, such as a diffusion aluminide or MCrAlY coating, that bonds the ceramic layer to the component surface. Processing steps generally include removing the ceramic layer from the component surface surrounding the cooling hole, followed by removing that portion of the ceramic layer within the cooling hole by immersing the component in a liquid and then directing ultrasonic energy into the cooling hole.

Abstract: A method for ashing a resist pattern covered by a hardened layer caused by an ion implantation process previously conducted including a first step for conducting an ashing process at a first temperature e.g. 129° C. or less at which no popping phenomenon happens, for removing the hardened layer, and a second step for conducting an ashing process at a second temperature e.g. 150° C. at which the ashing rate is high, for entirely removing the remaining resist pattern, and apparatus employable for the method for ashing a resist pattern covered by a hardened layer including a mechanism for moving up and down a semiconductor wafer to regulate the temperature of the semiconductor wafer and including a shutter which intervenes between the semiconductor wafer and a heater.

Abstract: A heated high pressure air and/or a high pressure water are spouted through nozzles. Therefore, the coated layer is removed without crushing the bumper unlike in the conventional method, and therefore, a plurality of process steps can be skipped. Thus the bulk of the apparatus can be reduced, the operating cost can be lowered, and the environment can be protected. The method for removing a coated layer includes the step of installing a bumper to be subjected to a removal of the coated layer. Then the coated layer is removed from the bumper by spouting water and/or a pre-heated air to the bumper. Then the bumper is carried to a predetermined psition after removing the coated layer, and then the bumper is detached. The apparatus includes an installing/detaching means for installing/detaching the bumper to be subjected to a removal of the coated layer.

Abstract: Methods for baking-out and for cooling a vacuum chamber are provided. In a first aspect, an inert gas which conducts heat from the vacuum chamber's bake-out lamps to the shield and from the shield to the other parts within the vacuum chamber is introduced to the chamber during chamber bake-out. The inert gas preferably comprises argon, helium or nitrogen and preferably raises the chamber pressure to about 500 Torr during chamber bake-out. A semiconductor processing apparatus also is provided having a controller programmed to perform the inventive bake-out method. In a second aspect, a process chamber is provided having at least one source of a cooling gas. The cooling gas is input to the chamber and is allowed to thermally communicate with the chamber body and components. The cooling gas may reside in the chamber for a period of time or may be continuously flowed through the chamber. Once the chamber reaches a target temperature the cooling gas is evacuated.

Abstract: The present invention provides method and apparatus for reducing particulate contamination during the processing of a substrate. In one embodiment, the step of preheating a substrate in a preheater to a desired temperature. The preheated substrate is transferred from the preheater to a buffer region having a pressure therein that is between about two (2) Torr and about seven hundred and sixty (760) Torr. The preheated substrate is transferred from the buffer region to a reaction chamber. Thermophoretic forces help repel particles away from the substrate surface during substrate transfer.

Abstract: A new drying method and apparatus is provided for drying a semiconductor device substrate, a liquid crystal panel substrate, or the like, which can reduce the possibility of contamination during drying, reduce facility costs and the area required for setting the facilities, and can perform drying in batches. Of the four sides of the upper end of the pull-up bath 10, two of the sides that oppose each other have a smaller height than the remaining two sides, and form overflow portions 10a where water in the pull-up bath overflows into a drainage bath 20. A rod-shaped heater 11 is mounted to the inside of the pull-up bath 10, and a heater cover 12 is disposed above the heater 11, with a pair of exhaust tubes 13 being led out to a location above the pull-up bath 10 so as to allow discharge of gas to the outside therefrom. A water supply tube 14 is connected to the bottom surface of the pull-up bath 10 to allow ultra-pure water to be supplied from a water supply system to be described later.

Abstract: The invention provides a solvent mixture including n-propyl bromide, a mixture of low boiling solvents and, preferably, a defluxing and/or ionics removing additive and/or at least one saturated terpene. The invention also provides a method of cleaning an article (e.g., an electrical, plastic, or metal part) in a vapor degreaser using the solvent mixture. The solvent mixture of the invention is non-flammable, non-corrosive, and non-hazardous. In addition, it has a high solvency and a very low ozone depletion potential. Thus, using the solvent mixture of the invention, oil, grease, rosin flux, and other organic material can be readily removed from the article of interest in an environmentally safe manner.

Abstract: Apparatus and methods are described for removing contaminants from an article using a supercritical or near supercritical solvent fluid held at substantially constant pressure in a pressure vessel. The article to be cleaned is first contacted with a solvent fluid in which the contaminant is soluble at a first supercritical or near-supercritical temperature. The contaminate-containing fluid is then cooled or heated to a second supercritical or near supercritical temperature to lower the solubility of the contaminant in the supercritical fluid and thereby precipitate or phase separate the contaminant. The contaminant is then recovered. Movement of the solvent fluid within the pressure vessel is preferably by convection induced by heating and cooling means in the vessel.

Abstract: Equipment used in the processing of plastic, such as molds and extrusion screws, is cleaned of plastic residue by a combination of thermal cycling and agitation without impact cleaning. A chamber can be heated by an electric radiant heater and cooled by the introduction of liquid nitrogen. A fixture in the chamber receives the equipment to be cleaned and is agitated by a drive motor. The chamber is heated and cooled in the following cycle in which the drive motor agitates the fixture: first to 250-300.degree. F., then to -315.degree. F., then cycled between -50.degree. F. and -10.degree. F., then to 150.degree. F., then to -200.degree. F., then to 100.degree. F., then to ambient temperature. The chamber is controlled by a computer that prompts the operator for the kind of plastic to be cleaned off of the equipment and then controls the heating and cooling automatically.

Abstract: This is a method for pyrocleaning that degreases metal components using an oven, an oxidizer, a system gas supply, a system gas exhaust, and heat exchangers. The degreasing is accomplished by first transporting the metal components through the oven and exposing the oil coated metal components to hot gases which have a temperature above the vaporization point of the oil. The hot gases are introduced into the oven by way of the system gas supply that does not include products of combustion (indirect heating). Since the gases are at a temperature above the vaporization point of the oil, upon contact with the metal components, the gases cause the oil to evaporate from the metal components. The resultant hydrocarbon-filled surrounding gases are then evacuated from the oven and transported to the oxidizer. In the oxidizer, the hydrocarbon-filled gases are exposed to a burner that catalyzes the oxidation process. After exiting from the oxidizer, the hydrocarbon-free gases are discharged into the atmosphere.

Abstract: The present invention provides methods and apparatus for reducing particulate contamination during the processing of a substrate. In one embodiment, the method includes the step of preheating a substrate in a preheater to a desired temperature. The preheated substrate is transferred from the preheater to a buffer region having a pressure therein that is between about two (2) Torr and about seven hundred and sixty (760) Torr. The preheated substrate is transferred from the buffer region to a reaction chamber. Thermophoretic forces help repel particles away from the substrate surface during substrate transfer.

Abstract: A process for continuously discriminating between a contaminated plastic material containing trapped volatile contaminants and plastic material which contains an acceptable threshold of contaminants comprising first supplying a continuous source of plastic material wherein the plastic material contains trapped volatile contaminants and feeding a sample of the plastic material preferably to the input section of an auger conveyor. The auger conveyor contains a barrel and a transfer screw positioned within the barrel with flights thereon for conveying the plastic material, the auger also connected to an output section which itself is connected to a detector for detecting trapped volatile contaminants.

Abstract: A wet chemical process for removing an abrasive oxide coating from the surface of a rotating turbine engine component, such as a tooth that forms a rotating air seal with a complementary sealing member. The process generally entails subjecting the coating to a caustic solution at an elevated pressure. The caustic solution is preferably a mixture of water and a base, such as sodium or potassium hydroxide, with the addition of an organic compound being a preferred constituent in a sufficient amount as a solvent media for the caustic solution. A suitable caustic solution contains the base and water at a ratio of about one to one (1:1). If present, the organic compound may constitute about one to about ninety-eight weight percent of the solution. The process is preferably carried out in an autoclave charged with the caustic solution.

Abstract: A system and method are provided for separating water from a solvent during dry cleaning. Included is an inlet capable of receiving a mixture of dry cleaning fluid and water from a basket of a dry cleaning apparatus. The dry cleaning fluid includes a siloxane composition. Also provided is a flow controller for urging a flow of the mixture received from the outlet. Coupled to the flow controller is a coalescent media that receives the mixture urged by the flow controller. A chamber is coupled to the coalescent media for receiving the mixture from the coalescent media to separate the water and the dry cleaning fluid. Also coupled to the chamber is an outlet to remove the dry cleaning fluid from the chamber in the absence of the water.

Abstract: An apparatus and a concomitant method for controlling coolant (air) flow proximate a reaction chamber within a workpiece processing system such that the temperature of a wall of the reaction chamber is maintained at a predefined target temperature. The target temperature is typically a temperature that optimizes a process concurrently being accomplished within the chamber, e.g., utilizing one temperature during deposition processes and a different temperature during cleaning processes. The apparatus contains a temperature measuring device to measure the temperature of the chamber wall. The measured temperature is compared to the predefined target temperature. A closed loop system controls the air flow proximate the chamber walls such that the measured temperature becomes substantially equal to the target temperature. Air flow control is provided by an air flow control device located within an inlet conduit that supplies air to a shroud for channeling the air past the reaction chamber.

Abstract: Process for stainless steel pickling consisting in placing the material to be treated in a bath kept at a temperature ranging from 30.degree. C. to 70.degree. C. and containing:a) HClb) Fe.sup.3+c) HFd) emulsifiers, wetting agents, polishing agents, acid attack inhibitors;the bath being fed continuously with:an air flow equal to at least 3 m.sup.3 /h per m.sup.3 bath min. and an oxidizer quantity adjusted to the bath redox potential to be kept at 250 mV min.