Abstract: A method of removing graphite from metal molds used in the glass fabrication industry, the method including placing a metal glass-fabricating mold with graphite bonded thereto in a chamber, providing an oxygen rich mixture of combustible gases in the chamber, said oxygen rich mixture containing from about 10 to about 25% stoichiometric excess of oxygen, and igniting the oxygen rich mixture of combustible gases in the chamber to produce a temperature of at least about 6,000° F. and a pressure wave. A high temperature wave front and the pressure wave thereby produced remove graphite from the metal mold by ablation of the graphite.

Abstract: A process for removing residues from the microstructure of an object is provided, which comprises steps of preparing a remover including CO2, an additive for removing the residues and a co-solvent dissolving the additive in said CO2 at a pressurized fluid condition; and bringing the object into contact with the remover so as to remove the residues from the object. An apparatus for implementing the process is also provided.

Abstract: There are provided a lower sensor and an upper sensor mounted respectively on top and bottom surfaces of a sensor unit, an operation unit calculating respective measurements indicating the degree of adhesion of dirt to respective surfaces of a lower mold and an upper mold based on respective detection signals from the lower sensor and the upper sensor, and a comparator unit comparing each measurement from the operation unit with a predetermined reference value to transmit a predetermined warning signal if the measurement is equal to or smaller than the reference value. The warning signal is thus transmitted if reflected radiation that is radiation reflected from the mold surface has its intensity equal to or smaller than the reference value.

Abstract: A semiconductor manufacturing a method and an apparatus is described. That apparatus includes an ash chamber that has an ash chamber base, and a heating unit that is coupled to the ash chamber base. The heating unit applies heat to the ash chamber base to reduce deposition of residues onto ash chamber base surfaces, which could cause surface particle defects in a semiconductor device.

Abstract: The present invention is directed to a cleaning composition comprising: (a) an enzyme in an amount effective to promote cleaning; (b) viable microorganisms in an amount effective to degrade and promote the degradation of organic materials; (c) a surfactant; and (d) an aqueous carrier; said cleaning composition maintaining at least 95% enzymatic activity at a pH range of from about 5.5 to about 13.5.

Abstract: A microturbine power system and of a method of operating same comprising automatically detecting fouling of a recuperator and then cleaning the recuperator.

Abstract: A method of removing residual contamination including metal nitride particles from semiconductor wafer surfaces including the steps of: providing at least one semiconductor wafer with metal nitride particles adhering to the at least one semiconductor wafer surface thereto; subjecting the at least one semiconductor wafer to at least one mechanical brushing process while a cleaning solution including a carboxylic acid is supplied to the at least one semiconductor wafer surface; and, subjecting the at least one semiconductor wafer to an a sonic cleaning process including the carboxylic acid cleaning solution.

Abstract: A method for controlling the deposition of an organic layer in making an organic light-emitting device includes depositing at a deposition zone organic material forming a layer of the organic light-emitting device and providing a movable sensor which, when moved into the deposition zone and is being coated during the depositing step, provides a signal representing the deposition rate and thickness of the organic material forming the layer. The method also includes controlling the deposition of the organic material in response to the signal to control the deposition rate and thickness of the deposited organic material forming the layer, moving the movable sensor from the deposition zone to a cleaning position, and removing organic material from the movable sensor to permit reuse of the movable sensor.

Abstract: An apparatus for cleaning a glass substrate for use in information recording medium, having improved detergency, includes a plurality of gas feeding pipes, provided in a cleaning tank storing therein a cleaning fluid, for feeding air into the cleaning tank to generate bubbles of air in the cleaning fluid in which a glass substrate is immersed. The bubbles are brought into contact with the glass substrate while stirring the cleaning fluid to effectively remove deposits on the surface of the glass substrate.

Abstract: A method for selectively removing portions of a diffusion aluminide coating from a substrate is described. The coating is treated with an aqueous composition based on an acid having the formula HxZrF6, wherein x is an exemplary 2. The coating being removed is usually a noble metal-aluminide coating, and the substrate is typically a superalloy. Related compositions are also described.

Abstract: Process for pickling stainless steel carried out at a temperature of between 20° and 70° C., with the use of a pickling solution containing the following basic ingredients: H2SO4 (free acid): 50 to 200 g/l HF (free acid): 0 to 60 g/l F− anion (total): 5 to 150 g/l SO42− anion (total): 50 to 350 g/l Total free acidity (H2SO4+HF): between 1 and 7 g. equiv./l where by “free acid” is meant the acid that does not constitute the anion bound in the form of salts or complexes with the metal cations present in the solution; and, in addition: Fe3+ in a quantity of at least 15 g/l chloride anion in a quantity of between 0.1 and 10 g/l, into which solution is fed, during the pickling process, an oxidant that is able to oxidize Fe2+ to Fe3+ in order to maintain the redox potential of the solution at a value of between +230 and +800 mV.

Abstract: An ultraviolet ozone oxidation system combines ultraviolet radiation, ozone, and heat to gently and effectively remove organic materials from a variety of substrates. The UV-ozone oxidation system includes a source of ozone which flows into a reaction chamber of the ultraviolet ozone oxidation system. The reaction chamber includes a UV lamp positioned above a heated sample stage. The heated sample stage is movably mounted such that a distance between the work piece or sample and the UV lamp can be adjusted to a minimum possible distance to improve process time. In addition, the heated sample stage is provided with a radiant heater which will provide adequate heating of the sample stage while the distance between the heater and the sample stage may be varied. The reaction chamber is also provided with a membrane diffuser which is positioned between the ozone source and the sample stage for uniformly distributing ozone to the sample on the sample stage.

Abstract: An extraction cleaning machine comprising dispensing and recovery systems, the dispensing system including a system for generating heat with an exothermic reaction upon activation for heating the cleaning solution prior to dispensing of the cleaning solution onto a surface. The cleaning solution dispensing system comprises a cleaning solution reservoir to which the heat of the exothermic reaction can be added and a dispenser. The heat of the exothermic reaction can also be added in line to the cleaning solution between the cleaning solution reservoir and the dispenser. The recovery system includes a suction nozzle, a recovery tank and a vacuum source for drawing recovered liquid from the suction nozzle into the recovery tank. A method of cleaning a surface comprises the steps of heating a cleaning solution by an exothermic chemical reaction, applying the cleaning solution to the surface and recovering the cleaning solution from the surface.

Abstract: The present invention pertains to apparatus and methods for maintaining wafer back side, bevel, and front side edge exclusion during supercritical fluid processing. Apparatus of the invention include a pedestal and an exclusion ring. When the exclusion ring is engaged with the pedestal a channel is formed. A reactant-free supercritical fluid is passed through the channel and over a circumferential front edge of a wafer. The flow of reactant-free supercritical fluid protects the bevel and circumferential front edge of the wafer from exposure to reactants in a supercritical processing medium. The back side of the wafer is protected by contact with the pedestal and the flow of reactant-free supercritical fluid. Exclusion rings of the invention, when engaged with their corresponding pedestals make no or very little physical contact with the wafer front side.

Abstract: A process for removing dopant ions from a semiconductor substrate includes exposing the substrate to a non-aqueous organic solvent in liquid and/or vapor form.

Abstract: A method and system for reducing acidic contamination on a process wafer following a plasma etching process including; providing an ambient controlled heating chamber for accepting transfer of a process wafer under controlled ambient conditions; transferring the process wafer to the heating chamber under controlled ambient conditions following plasma etching of the process wafer; providing a heat exchange surface within the heating chamber for mounting the process wafer in heat exchange relationship thereto; mounting the process wafer on a heat exchange surface contained within the heating chamber; and, heating the process wafer to a temperature sufficient to vaporize an acidic residue thereon to form acidic vapors; and, removing the acidic vapors from the heating chamber.

Abstract: The present invention provides an apparatus for cleaning a workpiece with a cleaning medium that is maintained at a single fluid phase. The apparatus comprises means for providing the cleaning medium; a pressurizable cleaning vessel for receiving the cleaning medium and the workpiece; and means for maintaining a single fluid phase of the cleaning medium in the cleaning vessel. The present invention further provides a process for cleaning the workpiece with cleaning medium under conditions such that the workpiece is exposed to a single fluid phase of the cleaning medium. The present invention further includes a process for a storage media that includes instructions for controlling a processor for the process of the present invention. The storage media comprises means for controlling the processor to control contacting conditions of the workpiece and the cleaning medium such that the workpiece is exposed to a single fluid phase of the cleaning medium.

Abstract: A system for processing substrates within a chamber and for cleaning accumulated material from chamber components is provided. The system includes a reactive species generator adapted to generate a reactive gas species for chemically etching accumulated material from chamber components, and a processing chamber having at least one fluoropolymer coated component which is exposed to the reactive species. Preferably to have the greatest impact on chamber cleaning efficiency, the fluoropolymer coated component(s) are large components such as a gas distribution plate or a backing plate, and/or a plurality of smaller components (e.g., a shadow frame, chamber wall liners, a susceptor, a gas conductance line) so as to constitute a large percentage of the surface area exposed to the reactive species. Most preferably all surfaces which the reactive species contacts are coated with fluoropolymer.

Abstract: A vortex ring is used to produce a flow of fluid through a flexible tube, to remove surface deposits from a surface, and to transfer heat from a platen to a ring vortex. In pumping a fluid through a flexible conduit or tube, a vortex ring is launched along the tube so that the vortex ring encircles the tube. The vortex ring compresses and expands the flexible tube utilizing a high circumferential pressure formed at the bow of the vortex ring and a low pressure at the wake of the vortex ring. In removing deposits from a surface, a vortex ring launched along the surface mechanically abrades the surface and fractures the adhesion bonds of the surface deposits. In transferring heat from a heated surface to a vortex ring, the vortex ring removes the heat from the surface of the heated platen by forced convection.

Abstract: A process and system for conditioning a bulk container for ultra-high purity liquefied gas. Vapor is generated in the container from a conditioning quantity of the ultra-high purity liquefied gas by imposing a temperature difference on the container so that the vapor condenses when a temperature difference is achieved. The resulting liquid reflux, e.g., the condensed liquid drips or flows back to the conditioning quantity of the liquified gas, washes or removes contaminants, e.g., particles, metal and moisture, from the interior surface of the container. A portion of the vapor is vented from the container for reclamation. The used conditioning liquid may also be reclaimed.

Abstract: A water lance blower for cleaning heat installations includes a water lance moveably mounted with a mouth thereof at or in a hatch. The water lance can blow a jet of water through the heating installation, through which flames and/or flue gases are guided, to wall regions accessible from the hatch, during operation. The water lance is provided with at least one sensor for detecting at least one predeterminable measurement value for monitoring the quality of the water jet. A method for operating the water lance blower includes detecting and evaluating at least one parameter characteristic of the quality of the water jet as a measurement value during operation of the water lance blower. The method permits an evaluation of the cleaning effect of the water lance blower during operation and, if required, influencing of the same.

Abstract: A method and article of manufacture of a semiconductor device having a cleaned source/drain surface and substantially uniform cobalt silicide deposited thereon. The method of the invention includes a precursor conventional step of an argon ion pre-sputter step which generally cleans the semiconductor device surfaces but ensures a resputtering of SiO2 to form SiOx species deposits on the source/drain surface of the device. An in situ treatment using silicon hydride species causes reduction of the SiOx species leaving a cleaned residual silicon which can accept a cobalt deposition to form a desired cobalt silicide layer on the source/drain surface.

Abstract: Methods for cleaning screw extruder, especially powder-coating extruders, include filling the extruder barrel with a gel purge formulation comprised of a high-boiling pyrrolidone or piperidone (lactam) solvent (most preferably N-methyl pyrrolidone (NMP)), thickened with 5-50 wt. % of a thermoplastic resin thickening agent, most preferably polystyrene (PS). Once the extruder barrel is filled with the gel purge formulation, the screws are stopped and the gel allowed to soak for between about 10 to about 30 minutes. The screws are then restarted and the gel is discharged from the extruder. Immediately after the gel purge formulation exits the machine, a small amount of a thermoplastic “rinse” polymer (e.g., polyethylene) may be added so as to remove any vestigial amount of the gel purge formulation therefrom.

Abstract: In a method for cleaning a surface of a substrate an amount of a solution is applied on a surface of the substrate. After the solution is applied on the surface, crystallization of the solution is initiated to form a liquid-crystal mixture. Once the liquid-crystal mixture is formed, relative motion between the liquid-crystal mixture and the substrate is created to dislodge contaminants adhered to the substrate. In one alternative method, the solution is applied on a pad. In another alternative method, the substrate is place in a bath of the solution. A wafer cleaning module also is described.

Abstract: The method according to the present invention enables to suppress damaging the reaction tubes and the wafer boat made of quarts, when cleaning the reaction vessel after the completion of film forming process for a polysilicon or titanium nitride film, thus the method reduces the running cost. After forming a polysilicon film on the semiconductor wafers, the empty wafer boat is placed in the reaction vessel. The interior atmosphere of the reaction vessel is maintained at temperatures in the range of 700 to 1000° C. A mixed gas prepared by diluting chlorine gas with nitrogen gas is supplied at a predetermined flow rate into the reaction vessel to remove the polysilicon film. A titanium nitride film can also be removed in the same manner.

Abstract: An air conditioner cleaning device with which the use of detergent can be decreased to zero or minimized and washing time can be shortened. A feature is that the device comprises a watertight cover to receive washings for the air conditioner that is set in the ceiling, the nozzles—located above the watertight cover—for washing an air conditioner from which steam, warm water, and air for drying gush out, and a steam generator that connects to the steam supply line of the nozzles so that the steam generated with the steam generator and warm water shall be below the specified temperature and gush out from said nozzles.

Abstract: A produce cleaning system (20) and process (10) that employs plural forms of energy in an ionic liquid-based washing system (22, 24, 26) is described. The washing system (22, 24, 26) includes employing solvents and solutes in the wash bath (24) which promote the conduction of electrical energy. The electrical energy can be applied to the produce in the wash bath (24) in various waveforms, such as a modulating wave superimposed on a carrier wave. Additionally, ultrasonic energy is employed to provide high-frequency mechanical pressure waves against the produce. The electrical energy and the mechanical energy combine to produce energy in the applicable resonant frequency range that acts to destroy or transform pathogens, dirt and synthetic molecules that may exist on the produce to either destroy them or render them harmless.

Abstract: A method of cleaning semiconductor wafers before the epitaxial deposition comprising (A) etching silicon wafers with HF; (B) rinsing the etched wafers with ozonated ultrapure water; (C) treating the rinsed wafers with dilute SC1; (D) rinsing the treated wafers; (E) treating the wafers with dilute HF; (F) rinsing the wafers with DI water; (G) drying the wafers with nitrogen and a trace amount of IPA; wherein steps (E) through (G) are conducted in a single dryer chamber and wafers are not removed from the chamber between steps. A system comprising a single tank adapted for cleaning, etching, rinsing, and drying the wafers has means to inject HF into a DI water stream.

Abstract: Contaminants are removed from a surface of a substrate by applying a fluid to the surface; lowering the temperature of the fluid to form a solid layer of the fluid and entrap contaminants therein; and applying energy to the layer and/or substrate to cause the layer containing the contaminants to separate from the surface.

Abstract: A method for controlling the duration of a self-cleaning operation in an oven responsive to the oven usage. The oven includes a cooking chamber, a heating device for supplying heat into the cooking chamber, an exhaust outlet from the cooking chamber leading to atmosphere, and a heat control device for controlling the heating device for baking, broiling and self-cleaning cycles. The method of controlling the duration includes the steps of maintaining a count at the heat control device of the length of oven operation time performed since a last self-cleaning cycle, accepting an input at the heat control device to begin a self-cleaning operation, and controlling the heating device to heat the oven cavity for a time period based upon the length of oven operation time performed since a last self-cleaning cycle.

Abstract: The present invention is directed to an apparatus and method for cleaning deposited material from a semiconductor fabrication system. The apparatus is made of a heating element flow detector, interposed in a gaseous flow path between a gas supply and the rest of the system. The heating element creates atmospheric conditions in the fabrication system whereby the material deposited on the walls of the system are sublimated. The sublimated material is swept away by a gaseous flow in the system. In this manner, blockages of the system can be ameliorated without cracking the environmental seal on the fabrication device. Additionally, the throughput of the system is enhanced, since the system can be cleaned on a periodic basis, and excess material may be removed more promptly and efficiently. In one embodiment, the sublimator is a heating element coupled to a power supply. The heating element heats the gas flowing past it.

Abstract: The present invention is directed to methods for cleaning films and particulates from the compressor section and combustion contaminants from the combustion and turbine sections of a combustion turbine. Particulate films and contaminants adhering to the internal components of the compressor section of a turbine are readily removed by forcing a mist comprising a cleaning solution such as an aqueous surfactant solution through the compressor section. Contaminants resulting from fuel combustion and deposited in the combustion and turbine sections are removed by forcing a mist comprising a second cleaning solution through those sections. The second solution typically comprises an aqueous acid solution optionally including a corrosion inhibitor. The compressor section must be isolated from such acid solutions, e.g. by continuing to force the misted surfactant solution through the compressor section prior to and simultaneously with forcing the misted acid solution through the combustion section.

Abstract: A composition and method for the removal of scale from a substrate are disclosed. The composition and method are more specifically utilized for the in situ removal of silicate-containing scale from interior surfaces of boilers and other heat exchange equipment. The silicate-containing scale is deposited in the boilers as silicate-sulfate complexes of calcium, magnesium, aluminum, and other metal atoms that are present in water. The composition, which is circulated throughout the boiler to contact the interior surfaces, such as the boiler tubes, includes a chelating agent having at least two carboxylic acid functional groups, preferably citric acid. The composition also includes an alkali metal hydroxide basic agent. The preferred alkali metal hydroxides are either potassium or sodium hydroxide. The basic agent establishes an overall basic pH of from 7 to 14 in the composition to enable precipitation of the metal atoms from the composition after interaction with the chelating agent.

Abstract: The present invention includes methods and compositions for the removal of coatings such as paint from surfaces. The methods of the present invention are typically conducted between about 45° C. and about 75° C., and the compositions typically contain a carbonate, a dibasic ester, a pyrrolidine, a mono-ester. The formulations of the present invention typically exhibit a high efficacy in the removal of paint while having a low level of toxicity.

Abstract: A test carrier for testing bumped semiconductor components such dice, chip scale packages, BGA devices, and wafers is provided. The test carrier includes a base for retaining one or more components and contact members for making temporary electrical connections with contact balls on the components (e.g., solder balls). The test carrier also includes terminal contacts formed as hard metal balls, as hard metal balls coated with a non-oxidizing metal layer, or as glass, ceramic or plastic members coated with a conductive material. The contact members on the base protect the contact balls on the components from deformation during testing and handling. The terminal contacts on the test carrier are configured for multiple uses in a production environment without deformation.

Abstract: A method of cleaning substrates is provided. Prior to, during or prior to and during a cleaning process, fluid is applied to a substrate surface to form a fluid film thereon. Ice crystals are introduced into the fluid film on the substrate surface. The ice crystals have a temperature that is lower than the temperature of the fluid such that the fluid changes the ice crystals into a gaseous state to form a pulse generated in the fluid film. The depth of penetration of the ice crystals into the fluid film is controlled such that the ice crystals do not strike the substrate surface. The substrate surface is cleaned with the pulse.

Abstract: The present invention relates to methods for cleaning, rinsing, and/or antimicrobial treatment of medical carts, medical cages, and other medical instruments, devices or equipment. The method for cleaning employs a solid alkaline, for example a solid carbonate, cleaning composition for cleaning the medical cart, cage, instrument, device, or equipment. The method for rinsing employs a solid neutral or neutralizing rinse composition for rinsing the medical cart, cage, instrument, device, or equipment. The method for antimicrobial treatment employs a solid, for example a solid quaternary ammonium or solid halogen, antimicrobial composition, for antimicrobial treatment of the medical cart, cage, instrument, device, or equipment.

Abstract: A low pressure-high hydrogen flow rate process of cleaning a silicon wafer surface is described. The combination of process pressures below about 1 Torr with hydrogen flow rates up to about 3 SLM has been found to remove substantially all oxygen contamination from the silicon wafer surface at process temperatures less than about 800° C. without the use of a reactive gas. After processing at such process pressures and flow rates, even lower levels of oxygen contamination may be achieved by then increasing the process pressure, the hydrogen flow rate, and the process temperature, though the process temperature still remains less than 800° C. The combination of low pressure and high hydrogen flow rate can be achieved using a vacuum pumping speed of at least 30 cubic meters per hour. The present invention also describes an apparatus for cleaning a silicon wafer surface in which the processes of the present invention and other processes can be practiced.

Abstract: Systems and methods for prevention of condensation of ambient water vapor due to evaporation of frozen carbon dioxide particles used to clean data storage tapes. Various embodiments maintain conditions under which condensation cannot form in the ambient environment immediately surrounding a portion of a rigid surface on which the tape is maintained in thermodynamic contact and under tension (e.g., a metallic capstan around which the tape is wrapped).

Abstract: A wet dip method for photoresist and polymer stripping from a wafer surface without the need for a buffer solvent treatment step is disclosed. In the method, the wafer is first exposed to an etchant solution that is maintained at a temperature of at least 80° C. The wafer is then cooled in a room temperature air for a sufficient length of time until the temperature of the wafer reaches substantially room temperature. The wafer is then rinsed in a rinsing step that includes a quick dump rinse and a final rinse with deionized water that is maintained at a temperature not higher than room temperature without first exposing the wafer to a buffer solvent such as that required in a conventional wet dip method.

Abstract: The present invention discloses a method for cleaning a surface of a substrate where a silicon epitaxial layer will be formed before growing the silicon epitaxial layer in a selective epitaxial growth process. Firstly, a high temperature heating element is aligned in a silicon epitaxial layer growth chamber, disposed separated from the substrate, a cleaning gas is inserted into the chamber and is decomposed into an atom or radical state having high reactivity in a gas phase according to heat generation of the high temperature heating element, and is diffused into the substrate, whereby a substrate cleaning reaction is performed at a substrate temperature ranging from 400 to 600° C.

Abstract: A method and product for computer disk drives. Glass substrates are provided having low content of residual polishing particles on the surfaces thereof. An exemplary method includes reduction of residual polishing particle content by immersion of the glass substrate in an acid bath containing nitric acid, hydrogen peroxide and an organic acid having a carboxylic acid group.

Abstract: The present invention concerns a process of treating an energizing electrode for use in a metal halide lamp. Lamp energizing electrodes are placed into a support container and the support container is then placed within an oven that bakes the electrodes at an elevated temperature. Hydrogen is caused to flow through the support container at a rate of from 5 to 60 liters per minute while the temperature is maintained within the oven between 2000 and 3200 degrees C. In accordance with an exemplary embodiment of the invention, the temperature is maintained within the oven at 2400 and 2600 degrees C., the dew point of the hydrogen is less than minus 40 degrees C. and the electrodes are baked for a period of 10 to 240 minutes. This process treats the electrodes in the support container and results in lamps having superior maintenance of lamp output as measured in lumens of output.

Abstract: A composition and apparatus and method of using the composition for aqueous spray descaling or conditioning of scale or oxide on metal surfaces, especially stainless steel strip or the like, in one embodiment, although it can be used to descale or condition oxide or scale on other work pieces such as metal bar, or even discrete objects. An aqueous solution having a base composition of an alkali metal hydroxide, such as sodium hydroxide, potassium hydroxide, or a mixture of alkali metal hydroxides such as sodium hydroxide and potassium hydroxide is used. The aqueous solution may contain certain additives to improve the descaling performance of the salt. In one embodiment, the solution is used to condition the scale or surface oxide on a strip of stainless steel. The strip of steel is at a temperature between the melting point of the alkali metal hydroxide in anhydrous form and a temperature at which the Leidenfrost effect appears.

Abstract: A cleaning method for removing solid deposits of the oxides of nitrogen, especially dinitrogen pentoxide, from ozone generator tubes and dielectrics is described. The method circulates warm dry gas in the tube section of the generator, warm water in the shell section or both to clean the ozone generator. The oxides are evaporated and evacuated from the system. The method substantially reduces or eliminates the formation of nitric acid on the tubes and dielectrics when the generator is exposed to humidity upon being opened to the atmosphere.

Abstract: A method and an apparatus for removing a liquid, i.e. a wet processing liquid, from at least one surface of at least one substrate is disclosed. A liquid is supplied on a surface of substrate. Simultaneously or thereafter the liquid or the substrate is locally heated to thereby reduce the surface tension of said liquid. By doing so, at least locally a sharply defined liquid-ambient boundary is created. According to the invention, the substrate is subjected to a rotary movement at a speed to guide said liquid-ambient boundary over the surface of the substrate thereby removing said liquid from said surface.

Abstract: A method for use in two-components electrostatic image developers is disclosed, in which secure separation of a carrier coating resinous materials from a core magnetic material is achieved without affecting the properties of the core materials through process steps benign to the environment in super- or sub-critical water compositions under the conditions of a temperature of 300° C. or more and a pressure of 20 MPa. The core magnetic material is subsequently recycled for forming carrier. This method may also be useful for processing waste including magnetic materials with silicone resin coating.

Abstract: An improved method and apparatus for adjusting chemistry concentrations and temperatures within a substrate processing tank is provided. A first aspect may include checking the fluid level within the tank, and, if the level is higher than a predetermined upper level, bleeding an amount of fluid from the tank; if the level is lower than a predetermined lower level, flowing an amount of fluid to the tank, and if the level is between the predetermined upper and lower levels, bleeding an amount of fluid from the tank and flowing an amount of fluid to the tank. A second aspect may include flowing water into the tank at a flow rate at least equivalent to the flow rate of water required to achieve a chemistry spike of a predetermined concentration and volume prior to beginning the flow of chemicals. A third aspect may include a method and apparatus for heating or cooling chemistry to a predetermined temperature as the chemistry is recirculated.

Abstract: The present invention provides new and improved methods and apparatus for removing contamination from surfaces of substrates. Existing techniques include plasma ashing, glow discharge or UV/ozone processes. The present invention includes cleaning the substrate surfaces by transporting the substrates to be cleaned through a first zone where the substrates are heated preferably in a nitrogen atmosphere and then to a second zone where the substrates are surrounded by an atmosphere of ozone. The organic contamination is thereby vaporized into vapor products including CO, CO2 and H2O.

Abstract: Methods for reducing contamination of semiconductor substrates after processing are provided. The methods include heating the processed substrate to remove adsorbed chemical species from the substrate surface by thermal desorption. Thermal desorption can be performed either in-situ or ex-situ. The substrate can be heated by convection, conduction, and/or radiant heating. The substrate can also be heated by treating the surface of the processed substrate with an inert plasma during which treatment ions in the plasma bombard the substrate surface raising the temperature thereof. Thermal desorption can also be performed ex-situ by applying thermal energy to the substrate during transport of the substrate from the processing chamber and/or by transporting the substrate to a transport module (e.g., a load lock) or to a second processing chamber for heating. Thermal desorption during transport can be enhanced by purging an inert gas over the substrate surface.