Abstract: A process and apparatus for cleaning filters prior to recycling or disposal. In this process and apparatus liquid or supercritical carbon dioxide contacts the plugged pores of a filter under conditions in which carbon dioxide remains in the liquid or supercritical state.

Abstract: A method for performing a cleaning process uses a cleaning gas and high-frequency power upon a film deposition apparatus for depositing a film on a substrate placed in a reactor chamber which can be evacuated to a low pressure. Supplying of high-frequency power is temporarily stopped in the middle of the cleaning process, and the cleaning process is restarted by again supplying high-frequency power. This method is capable of effectively removing by-products from the inside of a reactor chamber and makes it possible to form a high-quality deposition film, in particular, a high-quality electrophotographic photosensitive drum.

Abstract: A chromium oxide coating is removed from a surface of an article by cleaning the article in an alkaline degreasing/rust removal solution at a degreasing/rust removal temperature of from about 180° F. to about 200° F., scale conditioning the article in an alkaline permanganate conditioning solution at a scale-conditioning temperature of from about 160° F. to about 200° F., and contacting the article to an acidic stripping solution comprising hydrochloric acid and an etching inhibitor at a stripping temperature of from about 130° F. to about 140° F.

Abstract: Process and apparatus for recovering clean fiberglass and urea formaldehyde from urea formaldehyde treated waste fiberglass, which involves the use of a continuous batch tunnel machine comprising end to end modules in each of which a perforated basket is rotatable and of such construction as to transfer goods within each basket to subsequent baskets and out the end of the basket at the exit of the machine. The waste fiberglass is introduced into the basket at the entrance to the machine to pass the fiberglass out the end of the machine, during which it passes through acid and wash loops in which the recovery takes place.

Abstract: The present invention cleans contaminants from pipes. The first step may be pulling a vacuum on the pipe to be cleaned. The pipe is then filled with a solvent, which is preferably a fluorocarbon solvent. After the pipe is filled with solvent, a cleaning solution is pumped at a high velocity through the pipe. The cleaning solution preferably comprises the fluorocarbon solvent, and a fluorosurfactant. The pipe is then rinsed with solvent. A particle counter is used to determine whether the solvent rinse contains an acceptably low number of particles. The solvent is then blown out of the pipe by a gas, such as dry air. A vacuum is then pulled on the pipe. Subsequently, a hot dry gas is pumped through the pipe to evaporate and remove any remaining solvent. The gas is preferably hot, dry air. The gas exiting from the pipe is then checked to confirm that it contains an acceptably low level of solvent vapor.

Abstract: There is provided a surface cleaning apparatus and method using plasma to remove a native oxide layer, a chemical oxide layer, and a damaged portion from a silicon substrate surface, and contaminants from a metal surface. By absorbing potential in a grounded grid or baffle between a plasma generator and a substrate, only radicals are passed to the substrate, and HF gas is used as a second processing gas. Thus a native oxide layer, a chemical oxide layer, or a damaged portion formed on the silicon substrate during etching a contact hole is removed and the environment of a chamber is maintained constant by introducing a conditioning gas after each wafer process. Therefore, process uniformity is improved.

Abstract: A method is provided for stripping a polymer film from a floor surface, comprising the steps of: (a) applying a concentrated alkaline stripper solution including an alkaline agent and a solvent, to the polymer film; (b) allowing this concentrated alkaline solution to chemically act on the polymer film during a contact time of at least 5 seconds; (c) scrubbing the polymer film with a scrubbing device while diluting the concentrated alkaline solution with water, so as to obtain a sludge; (d) vacuum cleaning the floor surface by suction of the sludge, whereby this method is carried out using one floor treating machine. This method is an integrated floor stripping procedure which is considerably more effective than known stripping methods of the prior art.

Abstract: In accordance with the invention, the polymeric coating is removed from a coated optical fiber by disposing the fiber within a low pressure environment and applying sufficient heat to volatilize at least a portion of the polymeric coating. The result is that the coating material bursts from the fiber, yielding a clean glass surface virtually free of surface flaws. In a preferred embodiment the heat is provided by a resistive filament heater within a vacuum chamber.

Abstract: A paint-removing method comprises the steps of putting dimethyl sulfoxide into a tank, raising the dimethyl sulfoxide at a temperature of approximately 35° C. to 189° C. in the tank; and soaking a member to be removed of paint into the dimethyl sulfoxide in the tank. The dimethyl sulfoxide is applying or blowing to a member to be removed of paint.

Abstract: A material recovery process for used oil filters and oil contaminated materials. In a preferred embodiment, the process includes the steps of loading wire mesh baskets or racks with a plurality of used oil filters containing oil. The baskets are thereafter loaded into a sealable furnace. The furnace is a sealed vessel with air regulated through a series of burners. The oil filters are heated in the furnace in a first stage to a first temperature range for a first given time period. Oil released from the oil filters is drained from the furnace. The oil filters are heated to a second temperature range for a second given time period. The oil filters are thereafter heated to a third temperature range for a third given time period. Finally, the furnace is cooled through use of a plurality of air manifolds.

Abstract: The present invention relates to a method of processing selected surfaces in a semiconductor process chamber by creating a temperature differential between the selected surfaces and contacting the surfaces with a reactant that preferentially react with a surface at one end of the temperature differential relative to the other selected surface(s). More particularly, the invention relates to the use of nitrogen trifluoride (NF3) gas for in situ cleaning of cold wall process chambers such as Rapid thermal Chemical Vaporization (“RTCVD”) systems.

Abstract: A waste object containing oil has a first opening formed therein at an upper portion thereof and a second opening positioned below the first opening. The first and second openings are connected to a recovery tank. Hot water of a predetermined temperature is held in the recovery tank and is caused to accumulate inside the waste object via the second opening. Oil that has floated upwards is recovered in the recovery tank via the first opening.

Abstract: A method and apparatus for removing a toxic contaminant from porous material by placing the material and a fluid solvent for the toxic in a drum and rotating the drum around its horizontal axis. Also provided is apparatus for placing the drum in a sealable container and sealing the container during the decontamination cycle.

Abstract: An apparatus for cleaning a semiconductor wafer and method for cleaning a wafer using the same wherein, the apparatus includes a chamber on which a wafer is mounted, a revolving chuck mounted in the chamber for supporting and fixing the wafer, a nozzle for spraying cleaning solution onto the wafer, a cover for covering an upper part of the chamber, a heating lamp fixed on an upper part of the cover for heating the wafer or the cleaning solution, a cooling water conduit surrounding the cover, and an antipollution plate mounted on a lower part of the heating lamp in the cover for preventing the heating lamp from being polluted by the cleaning solution. According to an embodiment of the present invention, the cleaning solution, preferably of ozone water, hydrogen water, or electrolytic-ionized water, is heated for a short time and used to clean the wafer.

Abstract: There is disclosed a dry cleaning method capable of totally cleaning and removing particles left at the surfaces of the ultra fine structure of the semiconductor device within the vacuum state without being dependent on a wet cleaning method performed in the surrounding atmosphere. The dry cleaning method of the present invention is carried out such that each of the pads is approached to each of the front surface and the rear surface of a processed item such as the semiconductor wafer and the like, cleaning gas is injected into a fine clearance formed between both of them to generate a high-speed gas flow along the surface of the processed item and the particles left at the surfaces of the processed item are physically cleaned and removed with the high-speed gas flow. In order to assist this physical cleaning action, it is also possible to apply either a chemical cleaning method or an electrical cleaning method under application of plasma.

Abstract: A chemical delacquering composition, process and system for delacquering substrates such as aluminum scrap in which an aqueous solution containing at least one short-chain organic acid, preferably a mixture of two short-chain organic acids, and optional components such as surfactants, are contacted onto the substrate(s) with application of heat and agitation. The invention embraces the use of one or more organic acids (carboxylic acids) having a total of 2-12 carbons, preferably 3-8 carbons. Concentration of organic acid by weight ranges from about 0.5-8% per at least one organic acid, or preferably 2-4% for each organic acid component assuming two organic acid components are present. In the preferred embodiment of the invention, about 2-4% each of citric and lactic acids are present in the delacquering composition. Processing temperatures range from 160-212° F., preferably 180-212° F., and most preferably 185-212° F.

Abstract: A method for removing organic contaminants from a semiconductor surface whereby the semiconductor is held in a tank and the tank is filled with a fluid such as a liquid or a gas. Organic contaminants, such as photoresist, photoresidue, and dry etched residue, occur in process steps of semiconductor fabrication and at times, require removal. The organic contaminants are removed from the semiconductor surface by holding the semiconductor inside a tank. The method may be practiced using gas phase processing or liquid phase processing. The tank is filled with a gas mixture, a liquid, and/or a fluid, such as water, water vapor, ozone and/or an additive acting as a scavenger (a substance which counteracts the unwanted effects of other constituents of the system).

Abstract: A method and system for cleaning a metal article. The system is used to employ a method that comprises placing the article in a means defining a chamber; subjecting the article to a gaseous atmosphere in the means defining a chamber, where the gaseous atmosphere consisting essentially of carbon, hydrogen, and fluorine; and subjecting the article to the gaseous atmosphere at a temperature in a range from about 815° C. to about 1100° C. to clean the article.

Abstract: To clean a semiconductor wafer without using a harmful liquid chemical solution such as piranha and organic solvent

Abstract: Oxides on the surfaces of metal are reduced by directing reducing gases at them in a forceful and turbulent manner. In a preferred version, the gas is passed through at least two reducing zones designed to maintain a higher concentration of reducing gas in at least one of them than would be the case in a single reducing zone. The oxide-bearing surface is heated at the beginning of the process..

Abstract: A method and system for processing a wafer is disclosed. The method includes receiving a wafer having a process side and a backside. The method further includes removing un-wanted particles from the backside of the wafer to prevent gaps from forming between the backside of the wafer and a chucking surface. The method also includes performing a specific processing task on the process side of the wafer after cleaning the backside of the wafer.

Abstract: The invention provides aqueous alkaline compositions useful in the microelectronics industry for stripping or cleaning semiconductor wafer substrates by removing photoresist residues and other unwanted contaminants. The compositions typically contain (a) one or more metal ion-free bases at sufficient amounts to produce a pH of about 10-13 and one or more bath stabilizing agents having at least one pKa in the range of 10-13 to maintain this pH during use; (b) optionally, about 0.01 % to about 5% by weight (expressed as % SiO2) of a water-soluble metal ion-free silicate; (c) optionally, about 0.01% to about 10% by weight of one or more chelating agents; (d) optionally, about 0.01% to about 80% by weight of one or more water-soluble organic co-solvents; and (e) optionally, about 0.01% to about 1% by weight of a water-soluble surfactant.

Abstract: A method for the cleaning of SiO2 grain is known whereby SiO2 grain comprising contaminations is heated to a temperature at which the contaminations soften or form melting agglomerates with the SiO2 grain, thus separating the contaminations and the SiO2 grain. On this basis and to specify a method which achieves high grain purity at comparatively little expenditure of time, material and costs, and to provide a simple device suitable for the implementation of the method, it is proposed according to the invention that the SiO2 grain is fed to and heated in a gas stream which is directed towards an impingement plate, the SiO2 grain being accelerated in the direction of the impingement plate such that softened contaminations or melting agglomerates adhere to the impingement plate and cleaned SiO2 grain is removed from the impingement plate.

Abstract: The present invention provides a method for treating a substrate, or a plurality of substrates, so that the treatment thereof is enhanced. In particular, the method includes the steps of causing a heated liquid to contact the substrate(s) and causing a processing liquid to contact the substrate(s). Although the processing liquid comprises a heat sensitive agent, the effectiveness of the processing liquid is not substantially diminished by the application of heat due to the fact that the heat is applied by the application of a separate heated liquid rather than by heating the processing liquid itself. Thus, the application of heat can be utilized to enhance the treatment rate of a substrate surface without a corresponding reduction in effectiveness of the processing liquid.

Abstract: A method and a device for cleaning the undersurface of footwear and wheels of shopping trolleys and other transport expedients to minimize the amount of dirt and moisture brought into a building by persons entering the building. The objective of the invention is to provide a device which provides sustained high-performance cleaning, even in adverse weather conditions and with heavy use. To this end the invention uses a mat rotated as an endless loop between guide rollers within a floor opening at an entranceway or elsewhere within a building. In a section running in one direction, the mat acts at least partially as a tread surface and absorbs dirt and moisture, while in a section running back in the opposite direction, which has gathered dirt and moisture from its exposure to persons entering the building, the mat is cleaned and reconditioned by mechanical, hydraulic or pneumatic mechanisms within the floor opening.

Abstract: A method and product for computer disk drives. Glass substrates are provided having low content of residual polishing particles on the surfaces thereof. An exemplary method includes reduction of residual polishing particle content by immersion of the glass substrate in an acid bath containing nitric acid, hydrogen peroxide and an organic acid having a carboxylic acid group.

Abstract: A system for stripping an optical fiber includes a source air, and means for generating very short bursts of air. A heater heats the bursts of air to a temperature sufficient to remove the outer coating from an optical fiber, while maintaining the air isolated from the heat source. The heater includes a heater core that includes a heat generating element such as a conductive filament, and a heat chamber enclosed within the heater core. A spiral-shaped air conduit surrounds the outer surface of the heater core, and communicates with the heat chamber. Upon injection of air into the conduit, heat is transferred to the air from the heat generating element while the air flows through the air conduit and into and out of the chamber. A single burst of heated air removes the outer coating of an optical fiber, within less than one second.

Abstract: The decontamination of PCB-containing transformers to obtain treated transformers containing less than 50 parts per million (ppm) polychlorinated biphenyls (PCB) can be achieved using a method wherein the transformer is initially drained of all PCBs; then the core/coil assembly is removed. The internal surfaces of the transformer are then cleaned using a solvent. Finally, a new core/coil assembly is installed. The method is simple and can be completed within a substantially shorter period of time than methods known in the art.

Abstract: The invention provides a solvent mixture including n-propyl bromide, a mixture of low boiling solvents and, preferably, a defluxing and/or ionics removing additive and/or at least one saturated terpene. The invention also provides a method of cleaning an article (e.g., an electrical, plastic, or metal part) in a vapor degreaser using the solvent mixture. The solvent mixture of the invention is non-flammable, non-corrosive, and non-hazardous. In addition, it has a high solvency and a very low ozone depletion potential. Thus, using the solvent mixture of the invention, oil, grease, rosin flux, and other organic material can be readily removed from the article of interest in an environmentally safe manner.

Abstract: Equipment used in the processing of plastic, such as molds and extrusion screws, is cleaned of plastic residue by a combination of thermal cycling and agitation without impact cleaning. A chamber can be heated by an electric radiant heater and cooled by the introduction of liquid nitrogen. A fixture in the chamber receives the equipment to be cleaned and is agitated by a drive motor. The chamber is heated and cooled in the following cycle in which the drive motor agitates the fixture: first to 250-300° F., then to −315° F., then cycled between −50° F. and −10° F., then to 150° F., then to −200° F., to 100° F., then to ambient temperature. The chamber is controlled by a computer that prompts the operator for the kind of plastic to be cleaned off of the equipment and then controls the heating and cooling automatically.

Abstract: Apparatus for stripping ceramic coatings from the surfaces of articles. The apparatus includes a dedicated pressure vessel, such as an autoclave, which is maintained at an elevated temperature. Caustic solution is preheated to a first elevated temperature before injecting it into the autoclave, and the caustic solution is filtered and cooled after use in the autoclave. The articles are stripped of coating by maintaining the articles at an elevated temperature and pressure for a predetermined time. Various options include the use of analytical equipment to maintain the chemistry of the caustic solution and use of a volatile organic solution to prepressurize the autoclave and shorten cycle time. The autoclave is maintained in a nitrogen chamber to minimize the risks associated with volatile components.

Abstract: A cleaning method for a CVD apparatus which forms films on wafers by introducing film forming gas into a chamber by means of a shower head. In this method, the NF3 gas, which forms the cleaning gas including a compound containing fluorine atoms, is activated by exposure to microwaves by a microwave generating source, and then introduced into the chamber. The temperature of the lid section is raised by heating the lid section by means of a heater plate, or halting supply of cooling water to the lid section from the water supply source, whereby the temperature of the shower head during cleaning is raised above the temperature at which film formation onto the wafer is performed.

Abstract: There is provided a semiconductor manufacturing system and a method for cleaning the same. Silicon oxide adhering to Elements, which constitute the system, is removed by a cleaning gas containing an HF gas and a water vapor together with by heating the elements.

Abstract: The present invention relates to a method of processing selected surfaces in a semiconductor process chamber by creating a temperature differential between the selected surfaces and contacting the surfaces with a reactant that preferentially react with a surface at one end of the temperature differential relative to the other selected surface(s). More particularly, the invention relates to the use of nitrogen trifluoride (NF3) gas for in situ cleaning of cold wall process chambers such as Rapid thermal Chemical Vaporization (“RTCVD”) systems.

Abstract: Methods of removing gaseous phase contaminants from a processing chamber, such as a PVD chamber, are provided. In one aspect, a method of removing gaseous phase water from a processing chamber is provided that includes placing a heated substrate that has a titanium film in the processing chamber to dissociate a first portion of the gaseous phase water into hydrogen and oxygen and capture some of the oxygen in, the titanium film. The dissociated hydrogen and uncaptured oxygen are pumped from the processing chamber and the substrate is removed from the processing chamber. Pump down times and test wafer consumption may be reduced.

Abstract: A workpiece or substrate is placed in a support in a reaction chamber. A heated process liquid is sprayed onto the substrate. The thickness of the layer of process liquid formed on the substrate is controlled, e.g., by spinning the substrate. Ozone is introduced into the reaction chamber by injection into the liquid or into the reaction chamber, while the temperature of the substrate is controlled, to chemically process the substrate. The substrate is then rinsed and dried.

Abstract: Magnetic disk substrates are produced by subjecting glass substrates to at least steps of degreasing, etching, sensitization with tin chloride, activation and sensitivity-enhancing treatment in that order, then plating the pretreated substrates with a nickel/phosphorus film, and thereafter polishing the plated substrates. In the process, the substrates being processed are washed with hot pure water at a temperature of not lower than 50° C. for a period of from 20 to 90 seconds, after the sensitization step but before the activation step, and heated at a temperature of not lower than 70° C. for a period of from 5 to 100 minutes, after the sensitization step but before the nickel/phosphorus-plating step.

Abstract: A method for efficiently and completely removing a film deposited inside a film forming chamber and an in-situ cleaning method of a hot element CVD apparatus. A hot element is disposed in a chamber is heated up to a temperature of 2000° C. or higher after the chamber is exhausted. Thereafter a cleaning gas which is decomposed and/or activated by the hot element to generate an activated species that converts the deposited film into gaseous substance is introduced into the chamber.

Abstract: A method and apparatus for baking-out and for cooling a vacuum chamber are provided. In a first aspect, an inert gas which conducts heat from the vacuum chamber's bake-out lamps to the shield and from the shield to the other parts within the vacuum chamber is introduced to the chamber during chamber bake-out. The inert gas preferably comprises argon, helium or nitrogen and preferably raises the chamber pressure to about 500 Torr during chamber bake-out. A semiconductor processing apparatus also is provided having a controller programmed to perform the inventive bake-out method. In a second aspect, a process chamber is provided having at least one source of a cooling gas. The cooling gas is input to the chamber and is allowed to thermally communicate with the chamber body and components. The cooling gas may reside in the chamber for a period of time or may be continuously flowed through the chamber. Once the chamber reaches a target temperature the cooling gas is evacuated.

Abstract: Methods and Apparatus for forming and maintaining high vacuum environments are provided. In one aspect, a method is provided for forming and maintaining a vacuum in a processing chamber including evacuating the processing chamber with a vacuum pump to a first chamber pressure and removing gaseous material from the chamber volume with a getter material to reduce the chamber pressure to a second chamber pressure less than the first chamber pressure. The method may further include providing a substrate in the processing chamber and raising the temperature of the substrate and/or processing chamber to a temperature sufficient to outgas contaminants in the substrate and processing chamber components.

Abstract: A system for processing substrates within a chamber and for cleaning accumulated material from chamber components is provided. The system includes a reactive species generator adapted to generate a reactive gas species for chemically etching accumulated material from chamber components, and a processing chamber having at least one fluoropolymer coated component which is exposed to the reactive species. Preferably to have the greatest impact on chamber cleaning efficiency, the fluoropolymer coated component(s) are large components such as a gas distribution plate or a backing plate, and/or a plurality of smaller components (e.g., a shadow frame, chamber wall liners, a susceptor, a gas conductance line) so as to constitute a large percentage of the surface area exposed to the reactive species. Most preferably all surfaces which the reactive species contacts are coated with fluoropolymer.

Abstract: Gum is removed by directing a steam jet (11) at an individual piece of gum (2) at a pressure sufficient to penetrate the gum. The steam temperature is sufficient to cause disintegration of the gum by the moistening effect of the steam. The gum disintegrates into particles (15) which can easily be swept up or removed by suction afterwards.

Abstract: In a method for processing a workpiece to remove material from a first surface of the workpiece, steam is introduced onto the first surface under conditions so that at least some of the steam condenses and forms a liquid boundary layer on the first surface. The condensing steam helps to maintain the first surface of the workpiece at an elevated temperature. Ozone is provided around the workpiece under conditions where the ozone diffuses through the boundary layer and reacts with the material on the first surface. The temperature of the first surface is controlled to maintain condensation of the steam.

Abstract: A method of cleaning a coating apparatus for coating articles with chocolate masses and the like with hot water includes the steps of: filling water into a tub of the coating apparatus, wherein the coating apparatus includes a driven grating conveyer belt for receiving the articles to be coated including an upper portion and a lower portion, and wherein the coating apparatus includes at least one aggregate being arranged in the upper region of the tub; pumping water out of the tub with at least one pump; and directing the substantially unpressurized water onto the grating conveyer belt and onto the at least one aggregate to be cleaned, the water having a temperature being higher than the melting temperature of the mass, the water flowing over the grating conveyer belt and the at least one aggregate and back into the tub in a substantially unpressurized manner.

Abstract: Apparatus including an elongate pipe (1) for use in the transfer of fluids susceptible to form deposits on cooling such as wax deposits in oil, and a container (12) having a reusable heat source including a supercooled solution, e.g., of aqueous sodium acetate. The container (12) is in heat conducting contact with a surface of the pipe (1), preferably on at least one surface of the container. The deposit may be removed from inside the pipe (1) by locating in heat conducting relation to the pipe a reusable heat source including a supercooled solution, and activating crystallization in the solution liberating heat which causes at least some of the deposit to melt and/or dissolve.

Abstract: An apparatus for surface treating a semiconductor wafer includes a surface treatment chamber and a source of radiation. The semiconductor wafer disposed inside the chamber is illuminated with radiation sufficient to create a plurality of electron-hole pairs near the surface of the wafer and to desorb ions and molecules adsorbed on the surface of the wafer.

Abstract: A dry process for the cleaning of precision surfaces such as of semiconductor wafers, by using process materials such as carbon dioxide and useful additives such as cosolvents and surfactants, where the process materials are applied exclusively in gaseous and supercritical states. Soak and agitation steps are applied to the wafer, including a rapid decompression of the process chamber after a soak period at higher supercritical pressure, to mechanically weaken break up the polymers and other materials sought to be removed, combined with a supercritical fluid flush to carry away the loose debris.

Abstract: A method for cleaning or recycling a polishing pad conditioning disk used in a chemical mechanical polishing apparatus is disclosed. In the method, a conditioning disk that has a top surface formed of diamond particles and covered by a layer of polishing debris such as silicon oxide is first provided. A water jet that has a pressure of at least 1,500 psi, or preferably, 3,000 psi is directed toward the top surface of the conditioning disk for at least 5 min., and preferably, for at least 10 min. to substantially remove the polishing debris. The conditioning disk is then positioned on a heated surface and heated to a temperature of at least 40° C. while simultaneously being blown by a flow of inert gas or CO2 maintained at 0° C. or below on the top surface to remove any residual polishing debris by causing a thermal shock in the silicon oxide films and a separation from the conditioning disk.

Abstract: An unnecessary film is removed by cleaning gas flowing in a treatment vessel 8 for depositing a film on an object W to be processed such as a semiconductor wafer. In this case, the cleaning gas is preheated and activated by the gas heating mechanism 52 and the cleaning gas flows in the treatment vessel 8 in this state. By doing this, an unnecessary film in the treatment vessel made of quartz is removed effectively without damaging the treatment vessel.

Abstract: The surface of an article with a metallic base body is cleaned. A plasma comprising electrically positively charged ions is generated, and the ions are accelerated toward the article, so that they come into contact with the base body for cleaning purposes. To do this, an electron beam is directed onto the base body. The outgoing flux of electrons which come into contact with the base body is controlled by the base body being connected to a reference potential via a switch of at a fixed, adjustable or regulated frequency.