Abstract: A method of removing first molecules adsorbed on the surfaces of a chamber and/or at least one object found in the chamber is provided. Second, polar molecules that have a desorptive effect on the first molecules are introduced into the chamber. The second molecules comprise nitrogen and hydrogen, and especially NH3 molecules.

Abstract: The present invention provides a method and process for removing adherent molten metal from a surface by applying a non-wetting agent for the metal to the surface or to the adherent molten metal. The non-wetting agent may be a pressurized fluid or applied by a pressurized fluid.

Abstract: The invention relates to a method for removing an area of a layer of a component consisting of metal or a metal compound. According to prior art, corrosion products of a component are removed in a first step by applying a molten mass or by heating in a voluminous powder bed. This requires high temperatures or a large amount of space. The inventive method for removing corrosion products of a component is characterized in that a cleaning agent is applied locally, which removes the corrosion products by means of a gaseous reaction product.

Abstract: A cleaning machine for cleaning supporting trays includes a cleaning cistern (100), a drying cabinet (200) and a control device (300). A water-supply pipe (112) and a drainpipe (120) are connected to the cleaning cistern. A microwave oven (118) is positioned in the cleaning cistern and a shelf (116) is located above the microwave oven for supporting the supporting trays. A cover (130) is pivotally attached to the cleaning cistern, under which a sensor is installed for sensing a level of water. The drying cabinet includes a shield (210) with a plurality of vents defined therein, and an intake fan (220) is provided in the shield. A plurality of heaters (232) is arranged in the drying cabinet below. One or more shelves (236) are mounted in the drying cabinet. An exhaust device (237) is connected to a back panel of the drying cabinet.

Abstract: Disclosed is a novel process for interior cleaning and by cleaning, removing noxious gas and/or restoring the operating efficiency of organically contaminated hydrocarbon processing equipment in a safe and effective manner and in a very short period of time, without a need to manually enter an unsafe environment and mechanically remove organic contaminants. Used is a formulation of non-aqueous, monocyclic saturated terpene mixed with a non-ionic surfactant package. The terpene-based chemical is injected into organically contaminated equipment using a novel process involving high-pressure steam to form a very effective cleaning vapor.

Abstract: Disclosed is a cleaning method of a ceramic member, which permits removing with a high accuracy the contaminants from a ceramic member contaminated with the contaminant. The cleaning method comprises the steps of processing the contaminated ceramic member with an alkaline chemical liquid having a pH value not smaller than 10 in the presence of an ultrasonic wave, processing the ceramic member processed with the alkaline chemical liquid with a prescribed acidic chemical liquid in the presence of an ultrasonic wave, and heating the ceramic member processed with the acidic chemical liquid under temperatures not lower than 1,000° C.

Abstract: The present invention provides a cleaning gas for semiconductor or equipment for producing semiconductor or liquid crystal, comprising a fluorine gas containing 1 vol % or less of oxygen and/or oxygen-containing compound.

Abstract: A method is disclosed for decontaminating a supercritical processing apparatus and/or wafers after a wafer cleaning step. In accordance the embodiments of the invention, a supercritical cleaning step utilizes a surfactant to clean a wafer and uses a supercritical rinse solution in a post-cleaning step to decontaminate the supercritical processing apparatus, the wafer or both from processing residues. In accordance with further embodiments of the invention, supercritical rinse solutions are used to cure processing surfaces of the supercritical processing apparatus after the supercritical processing apparatus is serviced or when replacement parts are installed.

Abstract: An efficient residential dishwasher is disclosed. The residential dishwasher comprises a washing chamber, a rack within the washing chamber for holding dishes, a water tank for holding hot water to be used to clean dishes located on the rack, and at least one spray head within the washing chamber for cleaning dishes on the rack. After hot water has been delivered from the water tank to the washing chamber, the spray head sprays hot water to the dishes on the rack for the purpose of cleaning. The water tank will be filled with water from a fresh water line in response to a cooking apparatus being turned on.

Abstract: A method for utilizing a decal removal apparatus provides a low pressure steam to a surface having a decal thereon at a decal area. The applicator has a plate having a seal connected to the bottom portion of the plate defining a cavity therein. An outlet communicates steam from a conduit into the cavity when to cavity is placed against the decal area. The low pressure steam moisturizes the adhesive connecting the decal to the vehicle so that the decal may then be relatively easy removed from the vehicle mechanically or otherwise.

Abstract: Water-free, gaseous sulfur trioxide is used as an agent to remove various organic coatings, films, layers and residues from the surface of a substrate when used in conjunction with certain other physical and chemical treatments applied at the appropriate time during the process.

Abstract: A method for cleaning a semiconductor workpiece having a metal layer in a processing chamber includes the steps of introducing a liquid solution including dissolved carbon dioxide onto the workpiece, and introducing ozone into the processing chamber. The ozone oxidizes contaminants on the workpiece, while the carbon dioxide inhibits corrosion of the metal layer. The liquid solution is preferably heated to a temperature greater than 40° C., and preferably comprises deionized water injected with carbon dioxide gas. The workpiece is preferably rotated within the processing chamber during the cleaning process. The ozone may be entrained in the liquid solution before the liquid solution is introduced onto the workpiece, or the ozone may be introduced separately into the processing chamber.

Abstract: A method for cleaning a process chamber, comprising the steps of introducing at least one cleaning gas to the process chamber; and employing a rapid heating module located in the process chamber, wherein the rapid heating module increases the temperature of chamber parts and improves the surface temperature uniformity of chamber parts when the module is turned on, thereby assisting the cleaning activity of the cleaning gas such that the process chamber is cleaned.

Abstract: A process for cleaning semiconductor fabrication equipment parts includes determining a definition for a clean part including multiple maximum acceptable impurity levels; determining an initial multiple impurity levels of a part prior to its cleaning; determining a cleaning process to apply to the part; applying the cleaning process to the part, wherein the cleaning process creates reduced multiple impurity levels for the part below that of the initial multiple impurity levels; determining the reduced multiple impurity levels; comparing the reduced multiple impurity levels against the multiple maximum acceptable impurities levels of the definition; and repeating the application of the cleaning process to the part if the reduced multiple impurity levels do not meet the definition of a clean part. A dilute aqueous cleaning solution for cleaning parts includes 0.5-1.5% wt. HF; 0.1-0.5% wt. HNO3; and 1-10% wt H2O2.

Abstract: A method and system for reducing acidic contamination on a process wafer following a plasma etching process including; providing an ambient controlled heating chamber for accepting transfer of a process wafer under controlled ambient conditions; transferring the process wafer to the heating chamber under controlled ambient conditions following plasma etching of the process wafer; providing a heat exchange surface within the heating chamber for mounting the process wafer in heat exchange relationship thereto; mounting the process wafer on a heat exchange surface contained within the heating chamber; and, heating the process wafer to a temperature sufficient to vaporize an acidic residue thereon to form acidic vapors; and, removing the acidic vapors from the heating chamber.

Abstract: A method of surface cleaning and controlled oxidation of superalloys is described. The method provides a thin homogeneous layer of relatively pure alpha alumina which is suited to receive and adhere to a subsequent vapor deposited coating.

Abstract: A method for removing silicone sealant from glass-ceramic surfaces is provided. The method includes heating the sealant to a temperature greater than 325 degrees Celsius so that it thermally degrades and then, mechanically removing the sealant from the glass-ceramic surface. A method of salvaging a glass-ceramic cooking surface from a cooktop including silicone sealant between a cooktop frame and the glass-ceramic cooking surface is also provided. If a defect is detected in the cooktop during manufacturing or distribution, the entire cooktop is heated to a predetermined temperature to allow the silicone sealant to be easily removed without using a knife or other potentially damaging devices. Once the silicone sealant is removed, the glass-ceramic cooking surface may be reused to produce another cooktop assembly.

Abstract: A substrate treatment process is disclosed to remove organic matter existing on a substrate such as a wafer, glass substrate or ceramic. The process comprises treating the substrate with ozone water and then with hydrogen water, or treating the substrate with ozone-hydrogen water or treating the substrate with ozone water and hydrogen water at the same time. A substrate treatment apparatus is also disclosed for a substrate. The apparatus comprises a treatment vessel, a substrate holder for rotating the substrate in a horizontal plane in the treatment vessel, a nozzle unit arranged in an upper part of the treatment vessel such that a liquid is downwardly fed, a feed line for feeding the liquid to the nozzle unit, and a chamber enclosing therein the apparatus in its entirety.

Abstract: A process for removing dopant ions from a semiconductor substrate includes exposing the substrate to a non-aqueous organic solvent in liquid and/or vapor form.

Abstract: A method that includes rotating a wafer, heating the wafer, applying a first liquid through one or more nozzles to a center of a topside of the wafer that is cooler than the heated wafer, and translating the one or more nozzles to an outer diameter edge of the wafer.

Abstract: A semi-aqueous solvent based method using non-aromatic, halogen-free organic solvent compositions for the effective removal of flux residue from electronic component surfaces after high temperature solder interconnections in the presence of rosin based flux compositions. Rosin flux residue can be removed using hydrophobic, essentially water insoluble, propylene glycol alkylether solvents in conjunction with a surfactant, preferably an ionic and/or a mixture of a non-ionic and an ionic surfactant in the first step, then a second step involving immersion with agitation in a hydrophobic solvent with no added surfactant. This is followed by a third step of hydrophilic solvent immersion with agitation/spray, rinsing off the hydrophilic solvent with water, and then a drying step.

Abstract: Methods for cleaning semiconductor wafers are presented. Contaminants, particularly photoresist and post-etch residue, are removed from semiconductor wafers. A wafer or wafers is first treated with a peroxide-containing medium, for example, to oxidatively cleave bond structures of contaminants on the wafer work surface. Excitation energy is used to activate the peroxide-containing medium toward the formation of radical species. After treatment with the peroxide-containing medium, a supercritical fluid treatment is used to remove any remaining contaminants as well as to condition the wafer for subsequent processing.

Abstract: A method for cleaning a lubricating oil cooler apparatus in situ with a cleaning liquid which includes introducing a cleaning liquid that is compatible with lubricating oil into the shell to cause cleaning of the shell and the external surfaces of the tube bundle. The cleaning liquid is recirculated in the shell to remove contaminants from the shell and the cleaning liquid is filtered after it has passed through the shell to remove contaminants from the cleaning liquid. The cleaning liquid is removed from the shell.

Abstract: A method for reclaiming fiberglass and a resinous residue from resinous fiberglass product. The method comprises first introducing the resinous fiberglass product to a single chamber or multi-chamber washer/extractor machine. An aqueous acid solution is then used to remove the resinous residue from the resinous fiberglass product. The fiberglass portion is then rinsed, dewatered, and stored for later use. At the same time, the resinous residue is recovered by precipitating the resinous residue out of the acid solution bath and separating it using a clarifier. The fiberglass portion is then available for reuse in the glass industry and other end use applications and the resinous residue may then be available for use in many other industries, including the fertilizer industry. In an alternative embodiment, a sizing composition may also be applied to the fiberglass portion prior to the dewatering step to form a sized fiberglass material.

Abstract: A cleaning method for removing solid deposits of the oxides of nitrogen, especially dinitrogen pentoxide, from ozone generator tubes and dielectrics is described. The method circulates warm dry gas in the tube section of the generator, warm water in the shell section or both to clean the ozone generator. The oxides are evaporated and evacuated from the system. The method substantially reduces or eliminates the formation of nitric acid on the tubes and dielectrics when the generator is exposed to humidity upon being opened to the atmosphere.

Abstract: A method for providing a high flux of point of use activated reactive species for semiconductor processing wherein a workpiece is exposed to a gaseous atmosphere containing a transmission gas that is substantially nonattenuating to preselected wavelengths of electromagnetic radiation. A laminar flow of a gaseous constituent is also provided over a substantially planar surface of the workpiece wherein a beam of the electromagnetic radiation is directed into the gaseous atmosphere such that it converges in the laminar flow to provide maximum beam energy in close proximity to the surface of the workpiece, but spaced a finite distance therefrom. The gaseous constituent is dissociated by the beam producing an activated reactive species that reacts with the surface of the workpiece.

Abstract: The present invention relates to a method for cleaning a pressurized container having at least one chemical contained therein. The pressurized container may be any type of container able to store chemicals under pressure. Preferably, however, the container is a rail tank car. Generally, the method includes: a step of injecting the container with an input gas to create a chemical/input gas mixture; a step of removing the chemical/input gas mixture via a vacuum pump; and a step of injecting the chemical/input gas mixture into a reaction tank to neutralize the chemical. The input gas may be heated nitrogen gas or heated, dry air. The reaction tank may contain a caustic material for reacting with the chemical.

Abstract: An apparatus for cleaning a semiconductor wafer and method for cleaning a wafer using the same wherein, the apparatus includes a chamber on which a wafer is mounted, a revolving chuck mounted in the chamber for supporting and fixing the wafer, a nozzle for spraying cleaning solution onto the wafer, a cover for covering an upper part of the chamber, a heating lamp fixed on an upper part of the cover for heating the wafer or the cleaning solution, a cooling water conduit surrounding the cover, and an antipollution plate mounted on a lower part of the heating lamp in the cover for preventing the heating lamp from being polluted by the cleaning solution. According to an embodiment of the present invention, the cleaning solution, preferably of ozone water, hydrogen water, or electrolytic-ionized water, is heated for a short time and used to clean the wafer.

Abstract: A method of cleaning a printhead in an inkjet printer by removing organic debris deposits from the printhead, uses anyone of the liquid mixes of NaOCl (sodium hypochlorite) and H2O (water), H2O2 (hydrogen peroxide) and H2O, Na2S2O4 (sodium hydrosulfite) and H2O, CaCl2O2 (calcium hypochlorite) and H2O, or KMnO4 (potassium pernanganate) and H2O on the debris deposits, to serve as a cleaning agent.

Abstract: Disclosed are a cleaning solution and a method of cleaning a semiconductor substrate using the same without damaging the substrate. The cleaning solution includes from about 10% to about 35% by weight of hydrogen fluoride (HF), from about 10% to about 35% by weight of ammonium fluoride (NH4F) and from about 30% to about 80% by weight of de-ionized water (H2O). A nitride layer at a side or bottom portion of the substrate, or on a control substrate can be rapidly removed using the cleaning solution.

Abstract: The invention is directed to a controlled environment processing chamber into which solvents, water and/or gases can be introduced for cleaning of an object. The process includes first applying a negative gauge pressure to the chamber to non-condensable gases and then introducing a solvent, solvent mixture, water or gas in either a liquid or vapor state to remove soluble contaminants from the surface of an object being processed in the chamber. Further steps recover residual solvent or solution from the object and chamber. A secondary cleaning step directs a vapor state fluid at high velocity at a solid surface of the object to remove insoluble material left behind after the pretreatment step. A final series of steps recovers any loose impediments or residual liquid or vapor from the chamber and returns the chamber to atmospheric pressure for removal of the cleaned object.

Abstract: Disclosed are a method and system for removing scratches from a planar panel of translucent or transparent material, such as glass, without removal from its frame. A heat source supplying a controlled amount of heat is moved across the surface of the planar panel at a controlled velocity and at a controlled distance from the surface so as to progressively melt a thin surface layer at portions of the surface heated by the moving heat source. The melted material re-flows under surface tension to smooth scratches in the surface layer. Movement of the heat source is repeated over different portions of the surface until all scratched areas have been treated. The treated panels have a smooth surface with scratches removed, and have good optical and structural qualities.

Abstract: A fluidics station is described that includes a housing that accepts removable modules, where each of the removable modules includes; a holder that receives a probe array cartridge, where the probe array cartridge includes a chamber that is fluidically coupled to fluid transfer apertures; a transport mechanism that reversibly transports the holder and the probe array cartridge between a first position and a second position; alignment pins constructed and arranged to engage one or more alignment features of the probe array cartridge, where the probe array cartridge is in the second position; and a needle constructed and arranged to interface with each of the fluid transfer apertures.

Abstract: The present invention provides an apparatus for cleaning a workpiece with a cleaning medium that is maintained at a single fluid phase. The apparatus comprises means for providing the cleaning medium; a pressurizable cleaning vessel for receiving the cleaning medium and the workpiece; and means for maintaining a single fluid phase of the cleaning medium in the cleaning vessel. The present invention further provides a process for cleaning the workpiece with cleaning medium under conditions such that the workpiece is exposed to a single fluid phase of the cleaning medium. The present invention further includes a process for a storage media that includes instructions for controlling a processor for the process of the present invention. The storage media comprises means for controlling the processor to control contacting conditions of the workpiece and the cleaning medium such that the workpiece is exposed to a single fluid phase of the cleaning medium.

Abstract: A method of controlling a dishwasher, which heats air in a washing chamber while supplying water into the washing chamber to generate hot water through a heat exchange between the heated air and the supplied water. Further, a second method of controlling a dishwasher operates an air generator while starting of the supplying of water into a washing chamber to heat the supplied water and air in the washing chamber. If a temperature of the water in the washing chamber exceeds a first reference value, the supplying of water is stopped and the air generator is operated. If a temperature of the air in the washing chamber exceeds a second reference value, the supplying of water is started.

Abstract: A composition and method for the removal of scale from a substrate are disclosed. The composition and method are more specifically utilized for the in situ removal of silicate-containing scale from interior surfaces of boilers and other heat exchange equipment. The silicate-containing scale is deposited in the boilers as silicate-sulfate complexes of calcium, magnesium, aluminum, and other metal atoms that are present in water. The composition, which is circulated throughout the boiler to contact the interior surfaces, such as the boiler tubes, includes a chelating agent having at least two carboxylic acid functional groups, preferably citric acid. The composition also includes an alkali metal hydroxide basic agent. The preferred alkali metal hydroxides are either potassium or sodium hydroxide. The basic agent establishes an overall basic pH of from 7 to 14 in the composition to enable precipitation of the metal atoms from the composition after interaction with the chelating agent.

Abstract: Apparatus for pressure processing components is disclosed which includes an improved closure system that minimizes dust-generating parts and allows easy access to the chamber. Ports are provided for introducing and releasing pressurized gases and fluids to and from the processing space. The heating system of the apparatus heats both the cover and the stage inside the pressurized chamber such that cycle time to equilibrate heated, pressurized fluids such as supercritical carbon dioxide inside the chamber are decreased. The apparatus includes a mechanism that raises the stage inside the chamber, pressing it against the fixed cover and sealing the inside of the pressure vessel. In one embodiment a screw-type jack is used to move the component-loaded stage fitted with a deformable o-ring seal a short travel distance to seat against the lid and seal the pressure chamber. In a related embodiment a computer and an electronic stepper motor are used to drive the pressing means in an automated fashion.

Abstract: A plasma etching chamber is cleaned with a supply of pressurized nitrogen or argon that is electrically heated. The cleaning cycle is performed during the idle time following an etching cycle. Electrically heated cleaning gas flows into the etching chamber for a predetermined period during which the etching chamber rises. Flow of heated cleaning gas is then stopped, and the etching chamber is evacuated by existing equipment. The cycle can be started automatically using a pressure signal from a conventional purging gas line or from a signal at a SECS/GEM port.

Abstract: A stripping solution is supplied onto the surface of a substrate and an alternating magnetic flux is applied to the substrate. The alternating magnetic flux induces a current in a conductive pattern of the substrate which heats the conductive pattern while the stripping solution is in contact with the substrate. The stripping solution, containing particles to be cleaned off the substrate, is then removed from the substrate.

Abstract: Methods of removing discoloration from a metal surface of an electronic device are presented the methods comprising the steps of exposing a metallic surface of an electronic device to a first composition comprising an organic reagent, the metallic surface having discoloration thereon, under conditions sufficient to form a first intermediate metallic surface substantially devoid of non-ionic residues; a second step of contacting the first intermediate metallic surface with a second composition comprising an acid under conditions sufficient to form a second intermediate metallic surface substantially devoid of non-ionic residues, oxides, hydroxides and the like; and rinsing the second intermediate metallic surface with deionized water.

Abstract: The present invention is a method of assisting the rinsing of a wafer in a single wafer cleaning apparatus. According to the present invention, after exposing a wafer to a cleaning and/or etching solution, the cleaning or etching solution is removed from the wafer by spinning the wafer and dispensing or spraying DI water onto the wafer as it is spun. The centrifugal force of the spinning wafer enhances the rinsing of the wafer. In order to enhance the rinsing of the wafer, in an embodiment of the present invention a solution having a lower surface tension than water, such as but not limited to isopropyl alcohol (IPA) is dispensed in liquid or vapor form onto the wafer after the DI water.

Abstract: In a system for cleaning a workpiece or wafer, a boundary layer of heated liquid is formed on the workpiece surface. Ozone is provided around the workpiece. The ozone diffuses through the boundary layer and chemically reacts with contaminants on the workpiece surface. Preferably, the liquid includes water, and may also include a chemical. Steam may also be used with the steam also physically removing contaminants, and also heating the workpiece to speed up chemical cleaning. Sonic or electromagnetic energy may also be introduced to the workpiece.

Abstract: A lithographic mask is placed in a chamber which is then sealed. The gas pressure in the chamber is reduced to dislodge contaminant particles on the mask surface.

Abstract: A substrate treatment process is disclosed to remove organic matter existing on a substrate such as a wafer, glass substrate or ceramic. The process comprises treating the substrate with ozone water and then with hydrogen water, or treating the substrate with ozone-hydrogen water or treating the substrate with ozone water and hydrogen water at the same time.

Abstract: An apparatus for cleaning an enrober head and a method for using the apparatus, in which the apparatus has a cleaning medium supply vessel having an outlet and an open top, an enrober head mount registered with the open top of the vessel, and a pump, arranged to pump cleaning medium from the vessel to an applicator for application to enrober head elements requiring cleaning. The mount is adapted to attach an enrober head to the vessel, such that, when an enrober head is removed from an enrober and mounted on the apparatus, cleaning medium applied to elements of the enrober head can pass through those elements, through the mount and open top, and back into the vessel, cleaning the enrober head elements, and allowing the cleaning medium to be reapplied.

Abstract: A cleaning apparatus for a lens defining opposed top and bottom surfaces and a peripheral edge. The cleaning apparatus comprises a rotatable base having a plurality of arms pivotally connected thereto and rotatable therewith. The arms are configured to releasably engage the peripheral edge of the lens. The cleaning apparatus further comprises a means for propelling a heated medium towards at least one of the top and bottom surfaces of the lens while the lens is being spun by the rotation of the base and the arms.

Abstract: A method of transporting a reticle is disclosed. The reticle is placed in a reticle carrier that has an ionizer. Moreover, the reticle may be attached with a pellicle. The pellicle consists of a pellicle frame and a pellicle film stretched over the pellicle frame. The pellicle frame has included within an absorbent material.

Abstract: A method and system for processing a wafer is disclosed. The method includes receiving a wafer having a process side and a backside. The method further includes removing un-wanted particles from the backside of the wafer to prevent gaps from forming between the backside of the wafer and a chucking surface. The method also includes performing a specific processing task on the process side of the wafer after cleaning the backside of the wafer.

Abstract: [Object] To reduce the amounts of cleaning liquids and rinse liquid used, as well as the energy consumption.

Abstract: A system and method are provided for stripping one or more optical fibers having multiple coatings, accomplished with multiple stripping steps or passes. As an example, each coating may be stripped relatively independently. Such stripping may be accomplished with multiple bursts of a fluid or gas heated to a temperature sufficient to remove the coating.