Abstract: A method for removing silicone sealant from glass-ceramic surfaces is provided. The method includes heating the sealant to a temperature greater than 325 degrees Celsius so that it thermally degrades and then, mechanically removing the sealant from the glass-ceramic surface. A method of salvaging a glass-ceramic cooking surface from a cooktop including silicone sealant between a cooktop frame and the glass-ceramic cooking surface is also provided. If a defect is detected in the cooktop during manufacturing or distribution, the entire cooktop is heated to a predetermined temperature to allow the silicone sealant to be easily removed without using a knife or other potentially damaging devices. Once the silicone sealant is removed, the glass-ceramic cooking surface may be reused to produce another cooktop assembly.

Abstract: The invention encompasses methods for cleaning surfaces of wafers or other semiconductor articles. Oxidizing is performed using an oxidation solution which is wetted onto the surface. The oxidation solution can include one or more of: water, ozone, hydrogen chloride, sulfuric acid, or hydrogen peroxide. A rinsing step removes the oxidation solution and inhibits further activity. The rinsed surface is thereafter preferably subjected to a drying step. The surface is exposed to an oxide removal vapor to remove semiconductor oxide therefrom. The oxide removal vapor can include one or more of: acids, such as a hydrogen halide, for example hydrogen fluoride or hydrogen chloride; water; isopropyl alcohol; or ozone. The processes can use centrifugal processing and spraying actions.

Abstract: Provided is a parallel-plate-type processing apparatus (10), which performs plasma CVD and includes a chamber (11) to be cleaned. To perform cleaning of the chamber (11), plasma of a gas including fluorine is generated outside the chamber (11), and supplied into the chamber (11). During the cleaning, an RF power is applied to electrode plates (12, 17) inside the chamber (11).

Abstract: A supercritical process vessel with an interior for holding a supercritical fluid is provided. A wafer support for supporting a wafer within the interior of a supercritical process vessel to expose the wafer to the supercritical fluid is provided. A lamp, which is able to operate at supercritical fluid pressures within the interior of the supercritical process vessel is provided.

Abstract: A method of transporting a reticle is disclosed. The reticle is placed in a reticle carrier that has an ionizer. Moreover, the reticle may be attached with a pellicle. The pellicle consists of a pellicle frame and a pellicle film stretched over the pellicle frame. The pellicle frame has included within an absorbent material.

Abstract: Cleaning solution is used to clean ceramic parts using the same. The cleaning solution includes about 5-30% by weight of fluoric salt, about 10-20% by weight of organic acid, about 30-50% by weight of organic solvent, and about 50% by weight of water. The ceramic parts may be portions of an etching apparatus on which plasma reaction by-products are adsorbed. Plasma reaction by-products are removed from the ceramic parts dipping the parts into the cleaning solution, followed by rinsing and heat treatment.

Abstract: A photoresist stripping apparatus and a corresponding method for removing photoresist layers after a patterned polyimide layer is developed. The photoresist-stripping apparatus includes a transporting unit, a stripping unit, a washing unit, a drying unit and a control unit. The transporting unit connects the stripping unit, the washing unit and the drying unit. The control unit is responsible for controlling the transport sequence and timing of the transporting unit. The method of stripping the photoresist layer off the OLED panel includes providing a stripping solution to the stripping unit to remove photoresist layers. The OLED panel is jet-cleaned with a washing solution in the washing unit so that any residual stripping agent is removed. Finally, the surface of the OLED panel is blown dry.

Abstract: Apparatus (20) for cleaning a window (24) of a vehicle (22), including a vessel (28), having an inlet (32) through which a washing fluid is received from a reservoir and an outlet (34) through which the fluid is discharged for cleaning the window. There is a heating element (50) for heating the fluid in the vessel, which element preheats the vessel before the washing fluid is received therein, whereby at least an initial quantity of the fluid is rapidly heated and discharged from the vessel.

Abstract: An apparatus and a method for cleaning carpets, upholstered surfaces, and other surfaces is disclosed, the apparatus and method utilizing a combination of vibratory motion, controllable heat, and cleaning agents, the apparatus comprising a base plate, heating elements with electrical connections, and means for moving the base plate to produce a scrubbing motion, the method comprising a replaceable cleaning implement in combination with a mechanical scrubber, a cleaning agent, and controllable heat.

Abstract: An efficient residential dishwasher is disclosed. The residential dishwasher comprises a washing chamber, a rack within the washing chamber for holding dishes, a water tank for holding hot water to be used to clean dishes located on the rack, and at least one spray head within the washing chamber for cleaning dishes on the rack. After hot water has been delivered from the water tank to the washing chamber, the spray head sprays hot water to the dishes on the rack for the purpose of cleaning. The water tank will be filled with water from a fresh water line in response to a cooking apparatus being turned on.

Abstract: A workpiece processing system for processing semiconductor wafers and other flat media includes a standalone processing unit having two or more modules vertically stacked on top of one another. A first module includes an ozone generator, a DI water supply, a purge gas/drying gas supply, and optionally includes an ammonium hydroxide generator. A second module is preferably stacked on top of the first module and includes a processing chamber in communication with the devices in the first module. The processing chamber preferably includes a rotor for holding and rotating workpieces, one or more spray manifolds, an ozone destructor, an anti-static generator, and/or any other suitable workpiece-processing devices. The rotor is preferably designed to hold two workpiece-carrying cassettes each capable of holding up to 25 workpieces. A third module is preferably stacked on top of the second module and includes the system electronics and controls.

Abstract: A method of contaminant sequestering. Specifically, one embodiment of the present invention discloses an apparatus for sequestering a contaminant comprising an exothermically reactive structure disposed within a hermetic enclosure. A sorbent material coats a surface of the exothermically reactive structure. The sorbent material reacts with a contaminant contained within an atmosphere of the hermetic enclosure when exposed to heat from an exothermic alloying reaction in the exothermically reactive structure. As such, the contaminant becomes sequestered within the hermetic enclosure.

Abstract: The invention concerns an ozone treatment method and an ozone treatment apparatus for performing a treatment such as the formation and reformation of an oxide film, the removal of a resist film by blowing an ozone gas onto a surface of a substrate such as a semiconductor substrate or liquid crystal substrate. The ozone treatment apparatus 1 comprises: a placement table 20 on which the substrate K is placed; a heating means for heating the substrate K placed on the placement table 20; an opposed plate 40, disposed opposite the substrate K, for discharging the ozone gas through a discharge port 44 formed in a surface facing the substrate K, a gas feeding means 43 for feeding the ozone gas into the discharge port 44; a lift means 30 for moving the placement table 20 up and down; and a control means 35 for controlling the operation of said lift means 30.

Abstract: A method of removing surface-deposited contaminants, comprising bringing an ozone-containing treating solution into contact with the surface of a treating target on which contaminants have deposited. The ozone-containing treating solution comprises an organic solvent having a partition coefficient to ozone in a gas, of 0.6 or more, and ozone having been dissolved in the solvent. Contaminants having deposited on the surfaces of various articles including substrates for electronic devices, such as semiconductor substrates and substrates for liquid crystal display devices can be removed by room-temperature and short-time treatment in a high safety and a good efficiency.

Abstract: The invention refers to a method and an arrangement for cleaning of porous materials, in particular textiles, in liquid carbon dioxide which by rapid, intermittent pressure drops is brought into boiling. Various ways of lowering and then again increasing the pressure in the chamber in which the cleaning takes place are described. The arrangement for carrying out the method comprises a pressure chamber (1) in which the goods (2) to be washed is treated, an adjacent container (13, 14) for the control of the carbon dioxide pressure in the pressure chamber (1), suitably a storage tank (7) for liquid carbon dioxide, a compressor (20) for supplying high-pressure gas into the pressure chamber, when necessary, a pump (10) for the transport of liquid carbon dioxide and the required connecting conduits between the volume vessels mentioned and, stop valves in these conduits.

Abstract: A method of restoring a contaminated polymer article including contacting a contaminated polymer article with an oil which is not a plasticizer under conditions effective to remove substantially all contaminants present on the polymer article to produce a restored polymer article.

Abstract: The present invention comprises methods, compositions and apparatus for cleaning the surfaces within vessels that have restricted points of entry, and in particular, the surfaces within oxygen converters and oxygen cylinders. These oxygen converters and oxygen cylinders are components of the onboard oxygen supply systems of aircraft. A surfactant and a solvent are mixed to form a cleaning composition that is boiled at reduced pressure and increased temperature within the oxygen converter or oxygen cylinder. The oxygen converter or oxygen cylinder is rinsed with pure solvent, and the rinse fluid is measured to determine the level of contaminants. Dry air is forced through the oxygen converter or oxygen cylinder to remove remaining solvent. The cleaning composition may comprise a fluorocarbon solvent and a fluorosurfactant.

Abstract: The present invention discloses a method for cleaning a surface of a substrate where a silicon epitaxial layer will be formed before growing the silicon epitaxial layer in a selective epitaxial growth process. Firstly, a high temperature heating element is aligned in a silicon epitaxial layer growth chamber, disposed separated from the substrate, a cleaning gas is inserted into the chamber and is decomposed into an atom or radical state having high reactivity in a gas phase according to heat generation of the high temperature heating element, and is diffused into the substrate, whereby a substrate cleaning reaction is performed at a substrate temperature ranging from 400 to 600° C.

Abstract: This invention provides a method of quickly heating a gas-solvent solution from a relatively low temperature T1 to a relatively high temperature T2, such that the gas-solvent solution has a much higher dissolved gas concentration at temperature T2 than could be achieved if the gas-solvent solution had originally been formed at the temperature T2. Various apparatuses are also provided for carrying out the heating method.

Abstract: A non-corrosive cleaning composition that is aqueous-based, non-hazardous and will not harm the environment and is useful primarily for removing both fresh and aged plasma etch residues from a substrate. The composition comprises (a) water; and (b) a synergistic combination of at least one tricarboxylic acid and at least one carboxylic acid. Preferably, the at least one carboxylic acid has a pKa value ranging from 3 to 6. Also, a method for removing etch residues from a substrate. The method includes the steps of (a) providing a substrate with etch residue; and (b) contacting the substrate with a cleaning composition comprising water; and a synergistic combination of at least one tricarboxylic acid and at least one carboxylic acid.

Abstract: The invention proposes a process and device for the at least partial elimination of carbon deposits in a heat exchanger in which an oxidation treatment is carried out comprising at least one controlled-oxidation stage at a conventional temperature between 400 and about 500° C. for a period of at least 4 hours, by means of an oxidizing fluid comprising for the greater part an inert gas, and a lesser quantity of oxygen, under conditions such that the temperatures of the fluids feeding or leaving the heat exchanger remain below about 520° C. throughout the oxidation treatment, and in that the hot approach of the exchanger remains below about 120° C. throughout the oxidation treatment. The invention also relates to a hydrotreatment system for the implementation of this process and this device.

Abstract: A liquid processing apparatus is provided to improve its processing efficiency, together with a liquid processing method. The apparatus is capable of both reduction in temperature-variation of a processing liquid at processing and shortening for temperature-recovery of the processing liquid. Further, the liquid processing apparatus can facilitate the establishment of respective designated temperatures for different processes and carry out different processes continuously and effectively. The apparatus includes an inner cylinder 25 to accommodate semiconductor wafers W and a chemical supply unit 50 to supply the semiconductor wafers W in an inner cylindrical chamber 23 with a chemical liquid. The apparatus further includes a case heat exchanger 90 arranged in an outer peripheral position of the inner cylinder 25 and allowing a temperature-adjustment medium to flow and a medium supplier 100 to supply the regulator 90 with the temperature-adjustment medium.

Abstract: In a process for removing the paint from plastic components provided with coats of paint, the plastic components are first crushed to a bulk material size of the crushed plastic pieces. The plastic pieces are subsequently mixed with a paint removing agent reducing the adhesion of the coats of paint to the plastic pieces, and circulated by means of a conveyor screw. The paint removing agent is formed in this connection by an emulsion consisting of at least one benzyl-substituted alkanol and an alkyl-glycol acetate or N-alkyl-pyrrolidone with an aqueous lye, which can not be completely mixed. The mixing ratio for mixing the individual components is selected so that it is in the range of a mixing gap. After the paint removing agent has acted upon the painted plastic pieces, a solid substance is added to the paint remover so that the further steps of the method can be carried out in a dry state.

Abstract: A method of removing cured silicone polymer deposits from electronic components. The components are immersed in a preheated solution of a quaternary ammonium fluoride in a hydrophobic non-hydroxylic aprotic solvent with agitation. The components are then immersed in a preheated solvent consisting essentially of a hydrophobic aprotic solvent with agitation. This is followed by a rinse and spray of the components with a hydrophilic, essentially water soluble solvent, with agitation. The components are then immersed in a water bath and then rinsed with a pressurized spray of water and then dried with a N2 blow dry.

Abstract: A wet dip method for photoresist and polymer stripping from a wafer surface without the need for a buffer solvent treatment step is disclosed. In the method, the wafer is first exposed to an etchant solution that is maintained at a temperature of at least 80° C. The wafer is then cooled in a room temperature air for a sufficient length of time until the temperature of the wafer reaches substantially room temperature. The wafer is then rinsed in a rinsing step that includes a quick dump rinse and a final rinse with deionized water that is maintained at a temperature not higher than room temperature without first exposing the wafer to a buffer solvent such as that required in a conventional wet dip method.

Abstract: The present invention relates to a process for pickling hot rolled, hot rolled & annealed, and cold rolled & annealed stainless steel strip in a continuous fashion. The process comprises a series of pre-pickling tanks and pickling tanks, and optionally includes a scrubber-brush tank, a de-smutting tank, a filtration unit and a heat exchanger.

Abstract: A cleaning apparatus for cleaning solder paste off the bottom side of a printed circuit board stencil includes a container of cleaning solution therein and a blade holder that is movable between a wiping position and the container of cleaning solution. A wiping blade is mounted in the blade holder. The blade holder, with the blade mounted thereon, is reciprocated back and forth when in communication with a stencil to be cleaned. The blade is moved from the wiping position in communication with the stencil into the cleaning solution in the container. A pneumatic piston and rotary actuator provides controlled movement of the wiping blade. The wiping blade may be vibrated during wiping to improve removal of solder paste from the stencil and the cleaning solution may be ultrasonically vibrated to improve removal of solder paste from the wiping blade. The wiping blade may also be pulsed into a sponge to remove excess cleaning solution prior to the next cleaning cycle.

Abstract: The present invention relates to a method of cleaning a container having an amount of liquefied petroleum gas contained therein. The container is first inspected thoroughly for leaks. Heated nitrogen gas is then fed into the container. The heated nitrogen gas may be transported from a nitrogen storage tank to the container via at least one pipe. Liquid nitrogen may be fed into a vaporizer for vaporizing the liquid nitrogen. The nitrogen gas may then be heated via a steamer to expand the nitrogen gas and ensure that no liquid nitrogen enters the container. The heated nitrogen gas may vaporize any liquid liquefied petroleum gas contained therein. Further, the heated nitrogen gas may transport the liquefied petroleum gas to a flare for incineration. The heated nitrogen gas may be added any number of times to reduce the concentration of the liquefied petroleum gas therein to a desired level. The container may then be steam cleaned and opened to enter and thoroughly clean or inspect the inside of the container.

Abstract: A method for resist strip and particle removal. Wafers (108) with a patterned resist formed thereon are placed on a wafer chuck (104) in a scrubber tool (100,200). Ozonated deionized water (112) is applied to the surface of wafer (108). The ozonated deionized water (112) strips the resist and removes the resist residue without the use of hazardous chemicals. Particle removal is accomplished in the same tool (100,200). The ozonated deionized water (112) is formed in a closed canister (114). Deionized water is circulated through the canister (114) and ozone is added to the deionized water at a premixer (118).

Abstract: A to-be-cleaned substrate is cleaned by use of an acid liquid agent in a cleaning cup, the remaining acid liquid agent is washed out by use of pure water, then an alkaline liquid agent is emitted to the surface of the to-be-cleaned substrate in the same cleaning cup to remove the acid liquid agent remaining on the to-be-cleaned substrate. A neutralization reaction between the acid and alkali is caused by emitting the alkaline liquid agent to the surface of the to-be-cleaned substrate so as to efficiently remove the acid liquid agent remaining on the surface of the to-be-cleaned substrate.

Abstract: The invention provides a method and device for decontaminating a contaminated hollow metal needle having electrical wires attached to the needle which heat cleaning fluid dispensed into the needle.

Abstract: The present invention relates to a method of removing a layer of material from a synthetic resin or an organic acid ester of cellulose comprising: washing the layer from the substrate with an aqueous alkali solution with a temperature of at least 105° C., and then washing the alkali solution from the substrate. Furthermore, the present invention relates to a pressure vessel used for the above method, comprising a longitudinal cylindrical body having a circular cross-section, an end plate connected to the top of the cylindrical body and an inverted end plate connected to the lower part of the cylindrical body in a manner such that its convex part faces upwards wherein the pressure vessel has a strainer plate and a stirring blade inside the cylindrical body.

Abstract: Apparatuses and methods of processing a substrate. The apparatus includes a wet-cleaning chamber, a drying chamber, and a substrate transferring chamber which transfers a substrate to and from the wet-cleaning chamber and the drying chamber. The drying chamber is one of a supercritical drying chamber or a low pressure drying chamber. The wet-cleaning chamber is one of a single-wafer cleaning chamber, a horizontal spinning chamber, a megasonic wet-cleaning chamber, or a horizontal spinning chamber having acoustic waves transmitted to the substrate.

Abstract: A method for servicing firefighter's turnout gear includes the step of transporting a mobile servicing facility in proximity to a fire department facility. The mobile servicing facility carries cleaning equipment for cleaning firefighter's turnout gear. For example, the cleaning equipment may include a cleaning machine for use with a carbon dioxide-based cleaning agent, a solvent, or laundry equipment. The method also includes the steps of operating the cleaning equipment to clean turnout gear of the fire department facility, and transporting the mobile servicing facility away from the fire department facility. Optionally, the mobile servicing facility also carries repairing equipment, supplies for repairing the turnout gear, power generation equipment, and/or a tracking system for preparing a report of services performed on the turnout gear.

Abstract: A cleaning solution is introduced at a working temperature higher than room temperature into a cleaning chamber after the temperature of the inside of the cleaning chamber has been raised by introducing a fluid having a higher temperature than room temperature into the cleaning chamber, or after the temperature of the cleaning chamber has been raised using a heat source, thereby cleaning a semiconductor wafer set in the cleaning chamber.

Abstract: A method and apparatus are provided for eliminating contaminants including metallic and/or hydrocarbon-containing contaminants on a surface of a semiconductor substrate by heating a semiconductor substrate which may have contaminates on the surface thereof to an elevated temperature within an integrated closed system while simultaneously purging the integrated closed system with a chlorine-containing gas. At the elevated temperatures the chlorine dissociates from the chlorine-containing gas and reacts with the contaminates on the substrate surface to form volatile chloride byproducts with such contaminants which are removed from the integrated closed system while the substrate is continuously heated and purged with the chlorine-containing gas. Subsequently, the substrate is moved to a cooling chamber within the integrated closed system and cooled to provide a semiconductor substrate having a clean surface.

Abstract: A system and method are provided for using an organic solvent to clean chamber parts used in semiconductor manufacturing. The chamber parts are exposed to the solvent using a dipping system or a vapor contact system in order to soften or dissolve the organic polymers. The solvent may be heated up to a temperature of 100° C. The organic cleaning solvent may be a pyrrole-based, amine-based, fluoro/ether-based or ether-based solvent. Additionally, a system and method are provided for establishing criteria to verify that the chamber parts are clean with respect to organic, metallic and particulate impurities and establishing criteria to verify that the physical surface morphology remains intact.

Abstract: A system for stripping an optical fiber includes a source of air and means for generating very short bursts of air. A heater heats the bursts of air to a temperature sufficient to remove the outer coating from an optical fiber, while maintaining the air isolated from the heat source. A single burst of heated air removes the outer coating of an optical fiber, within less than about one second. A series of closely spaced bursts or a prolonged burst of heated air may be used to remove an expanded length of fiber coating. Stripping may include translation of the fiber or the heater or portions thereof. The stripper may be configured to strip several loaded fibers or a single fiber.

Abstract: This is a method of cassette-to-cassette batch demounting process that includes providing an apparatus having two cassettes for holding and separating semiconductor substrates. A first cassette is placed on top of a second cassette, using the first cassette as the top cassette that holds the semiconductor substrate and the support substrate, and the second cassette at the bottom as a bottom cassette that receives the semiconductor substrate after demounting process. The semiconductor substrate is loaded with its support substrate into a slot in the top cassette. The top cassette will let only the semiconductor substrate to descend to the bottom cassette while blocking the support substrate from exiting the top cassette. The two cassettes are then soaked in a hot solvent that can dissolve or melt an adhesive that adheres the semiconductor substrate to the support substrate in order to weaken the cohesive force between the two substrates.

Abstract: A dry process for the cleaning of precision surfaces such as of semiconductor wafers, by using process materials such as carbon dioxide and useful additives such as cosolvents and surfactants, where the process materials are applied exclusively in gaseous and supercritical states. Soak and agitation steps are applied to the wafer, including a rapid decompression of the process chamber after a soak period at higher supercritical pressure, to mechanically weaken break up the polymers and other materials sought to be removed, combined with a supercritical fluid flush to carry away the loose debris.

Abstract: A method and composition for removing organic coatings or residues from a substrate is provided, which composition includes an organic carrier of ethanolamines and non-ionic alkylphenol ethoxylate surfactants and mixtures thereof and potassium hydroxide and being free of water.

Abstract: A produce cleaning system (20) and process (10) that employs plural forms of energy in an ionic liquid-based washing system (22, 24, 26) is described. The washing system (22, 24, 26) includes employing solvents and solutes in the wash bath (24) which promote the conduction of electrical energy. The electrical energy can be applied to the produce in the wash bath (24) in various waveforms, such as a modulating wave superimposed on a carrier wave. Additionally, ultrasonic energy is employed to provide high-frequency mechanical pressure waves against the produce. The electrical energy and the mechanical energy combine to produce energy in the applicable resonant frequency range that acts to destroy or transform pathogens, dirt and synthetic molecules that may exist on the produce to either destroy them or render them harmless.

Abstract: The pickling process of the present invention is designed for pickling electrical steel strip in a continuous fashion and comprises at least one pickling tank equipped with at least one set of sprayers designed to spray the top and bottom surfaces of a steel strip with a solution comprised of hydrogen peroxide prior to and/or after the strip is immersed in a solution contained in a pickling tank. The set(s) of sprayers in each of the pickling tanks are located above the level of the pickle bath solution, rather than being located in separate spray tanks. Upon exiting the final pickling tank, the strip is brushed/scrubbed to loosen any residual scale to form a clean strip.

Abstract: A device and method for cleaning a glue-application nozzle is provide. An apparatus defines at least one liquid discharge opening for discharging liquid onto the glue-application nozzle. A suctioning device is coupled to the apparatus for suctioning the discharged liquid.

Abstract: Disclosed are methods of cleaning articles of manufacture using hydrofluorocarbon and hydrochlorofluorocarbon fluids. The methods comprise generally the steps of (a) providing a hydrofluorocarbon and/or hydrochlorofluorocarbon fluid in liquid or supercritical state; (b) contacting an article of manufacture with said fluid; and (c) removing substantially all of said fluid from said article of manufacture.

Abstract: In order to remove impurities, especially liquids (5) and/or particles (4) from surfaces of plate-shaped workpieces (2) contaminated or wetted with liquid (5), at least one wiping element (3) is provided which moves with respect to the surface (2a) the wiping element (3) to be cleaned and contacts this surface (2a). The wiping element (3) is cooled down so that the liquid (5) coming into contact with this wiping element (3) and bristles (8) preferably provided thereon assumes a higher viscosity or even solidifies and consequently remains adhered together with the particles (4) contained in the liquid (5) to the wiping element (3) or its bristles (8). This cleaning principle can be assisted and influenced by heating of the surface of workpiece (2) upstream of the wiping element or elements (3) in the feed direction.

Abstract: A semi-aqueous solvent based method using non-aromatic, halogen-free organic solvent compositions for the effective removal of flux residue from electronic component surfaces after high temperature solder interconnections in the presence of rosin based flux compositions. Rosin flux residue can be removed using hydrophobic, essentially water insoluble, propylene glycol alkylether solvents in conjunction with a surfactant, preferably an ionic and/or a mixture of a non-ionic and an ionic surfactant in the first step, then a second step involving immersion with agitation in a hydrophobic solvent with no added surfactant. This is followed by a third step of hydrophilic solvent immersion with agitation/spray, rinsing off the hydrophilic solvent with water, and then a drying step.

Abstract: A method of washing a container,including charging a material to be contained into a container body having a mouth-and-neck portion; mounting a container closure on the mouth-and-neck portion of the container body, the container closure having a top panel wall, a cylindrical skirt wall extending downwardly from a peripheral edge of the top panel wall, and a washing liquid passage formed in at least one of an upper portion of the skirt wall and a peripheral edge portion of the top panel wall; and jetting a washing liquid at the container closure so that the washing liquid passes through the washing liquid passage and enters a space between the mouth-and-neck portion of the container body and the skirt wall of the container closure, thereby washing an outer peripheral surface of the mouth-and-neck portion of the container body and an inner peripheral surface of the skirt wall of the container closure. The washing liquid is at a temperature of 65° C. to 70° C.

Abstract: A method of removing residual contamination including metal nitride particles from semiconductor wafer surfaces including the steps of: providing at least one semiconductor wafer with metal nitride particles adhering to the at least one semiconductor wafer surface thereto; subjecting the at least one semiconductor wafer to at least one mechanical brushing process while a cleaning solution including a carboxylic acid is supplied to at least one semiconductor wafer surface; and, subjecting the at least one semiconductor wafer to an a sonic cleaning process including the carboxylic acid cleaning solution.

Abstract: In a method for processing a workpiece to remove material from a first surface of the workpiece, steam is introduced onto the first surface under conditions so that at least some of the steam condenses and forms a liquid boundary layer on the first surface. The condensing steam helps to maintain the first surface of the workpiece at an elevated temperature. Ozone is provided around the workpiece under conditions where the ozone diffuses through the boundary layer and reacts with the material on the first surface. The temperature of the first surface is controlled to maintain condensation of the steam.