Abstract: A process for reducing the content of residual organic substances in mixtures of plastics from durable goods can include separating a feed stream into two or more mixtures of flakes and preforming a cleaning process to remove a portion of one or more of the absorbed organic substances from one or more of the mixtures. Each mixture can contain one or more plastic types and at least one organic substance absorbed into the one or more plastic types. The flakes in the mixtures can have an average particle diameter of less than 10 millimeters.

Abstract: A cleaning system for a photomask unit is disclosed. The photomask unit defines an inner chamber and includes a photomask, a pellicle frame, a diaphragm-like pellicle film, and a ventilation port. The cleaning system includes: a housing defining an outer chamber; and a reduced-pressure generating unit disposed to intermittently generate a reduced-pressure zone in the outer chamber and in proximity to the photomask unit such that a pressure differential is generated between the inner chamber and the reduced-pressure zone to cause a central film portion of the diaphragm-like pellicle film to move toward or away from a central pattern region of the photomask so as to permit the cleaning gas to flow out of or into the ventilation port alternately.

Abstract: A method of removing photoresist beneath an overlayer includes estimating a rapid temperature change for a photoresist layer to produce cracking in the overlayer. The temperature chance is estimated so that the cracking of the overlayer is sufficient to allow a liftoff solution to penetrate below the overlayer during a liftoff step. The method further includes baking the photoresist layer and chilling the photoresist layer after baking to produce the rapid temperature change. The method then includes lifting off the photoresist layer using the liftoff solution.

Abstract: Methods for cleaning a surface of a substrate using a hot wire chemical vapor deposition (HWCVD) chamber are provided herein. In some embodiments, a method for cleaning a surface of a substrate may include providing a substrate having a material disposed on a surface of the substrate to a hot wire chemical vapor deposition (HWCVD) chamber; providing hydrogen (H2) gas to the HWCVD chamber; heating one or more filaments disposed in the HWCVD chamber to a temperature sufficient to dissociate the hydrogen (H2) gas; and exposing the substrate to the dissociated hydrogen (H2) gas to remove at least some of the material from the surface of the substrate.

Abstract: A method of cleaning a particle filter, in particular for combustion engines, includes the steps of adding heat to the inner of the particle filter during a certain time period in order to burn off the enclosed particles, to add liquid material to the inner of the filter during a certain time period in order to remove the burnt particles from the particle filter.

Abstract: A cleaning method for a film deposition apparatus that deposits a polyimide film conveyed into a film deposition chamber by feeding a first source gas formed of dianhydride and a second source gas formed of diamine into the film deposition chamber, the method including the steps of: generating an oxygen atmosphere in the film deposition chamber, and removing polyimide remaining in the film deposition chamber by heating the film deposition chamber at a temperature of 360° C. to 540° C. in the oxygen atmosphere and oxidizing the polyimide.

Abstract: A method of making a syringe assembly includes providing a first syringe component defining a first sliding surface that is substantially free of lubricant. The first sliding surface is contacted with water. The first sliding surface and the water in contact with the first sliding surface are heated at a temperature of at least 121° C. The first sliding surface is dried.

Abstract: Provided are a substrate cleaning apparatus, a substrate cleaning method, and a substrate cleaning program that preferably cleans the substrate without causing damage on the surface of the substrate. The substrate cleaning apparatus includes a liquid layer holding unit including a substrate cleaning nozzle that holds a liquid layer of the cleaning solution, a substrate heating unit that heats the surface of the substrate higher than the boiling point of the cleaning solution, and a moving up/down mechanism that approaches a substrate cleaning nozzle to the substrate. The moving up/down mechanism is controlled to boil the liquid layer held in the substrate cleaning nozzle by the heat of the surface of the substrate heated by the substrate heating unit to form a vapor layer between the surface of the substrate and the liquid layer to clean the surface of the substrate.

Abstract: The present invention is a processing method for applying predetermined processing to a workpiece with said workpiece mounted on a mounting stage arranged in a process chamber in a depressurized atmosphere, in which when no workpiece is mounted on the mounting stage, an inactive gas is discharged from at least a heat transfer gas supply hole of the mounting stage in the process chamber so that a gas layer is formed on a mounting surface of the mounting stage. The present invention is also a processing apparatus.

Abstract: A method for cleaning a thin film forming apparatus by removing extraneous matter attached to an interior of the thin film forming apparatus after supplying a treatment gas into a reaction chamber of the thin film forming apparatus and forming a thin film on an object to be processed, the method including: supplying a cleaning gas including fluorine gas, hydrogen fluoride gas, and chlorine gas into the reaction chamber heated to a predetermined temperature to remove the extraneous matter.

Abstract: Method and apparatus for removing residues of hazardous materials from vapor in a tank (1), wherein such a vapor is heated, passed outside the tank and subsequently cooled and the remaining dry vapor is recirculated, characterized in that a) said vapor is heated to a temperature of at least 5° C. above the melting point and below the self ignition point of the hazardous material, b) the vapor mixture thus formed is passed by means of a pump (3) from the tank through a discharge unit to a recovery unit, c) is cooled to a temperature of at least 5° C. lower and above the melting point of the hazardous material in a recovery unit, d) the liquid components of the vapor are recovered and the dry gas mixture is recirculated to the tank after reheating to the desired temperature, e) said recirculation being repeated as required.

Abstract: A method for cleaning cavities in workpieces, a cleaning device for this purpose and a device for the supply of media to a cleaning device of this type. Supercritical carbon dioxide is introduced into the cavity and the cavity is rinsed. The supercritical carbon dioxide located in the cavity is relieved of pressure after rinsing of the cavity, so that carbon dioxide gas and carbon dioxide snow are formed in the cavity and subsequently driven out of the cavity.

Abstract: A method for drying workpieces includes immersing the workpieces in a liquid bath, raising the workpieces with a first holder until a central opening of the workpieces is visible above liquid surface, then using a dry second holder rod inserted through said central opening to continue raising process. Due to this, a drying portion of the workpiece is not held by a wet holding mechanism.

Abstract: Pyrolysis methods for disassociating an organic mass, or coating from an article, by placing the article in an air tight processing chamber, circulating a gaseous mixture of ambient air and at least 40% water vapor from an opening, through the processing chamber and out of an exhaust port, and maintaining the processing chamber at a temperature above 650 degrees Fahrenheit for a sufficient time to disassociate the organic material. A batch oven and a continuous processing oven including entrance and exit air closures that utilize the pyrolysis methods are described.

Abstract: The present application provides a pulsed detonation cleaning system for cleaning an enclosed structure. The pulsed detonation cleaning system may include a pulsed detonation combustor cleaner and an external fuel-air flow. The pulsed detonation combustor cleaner delivers the external fuel-air flow into the enclosed structure and ignites the external fuel-air flow to clean the enclosed structure.

Abstract: The invention relates to a method of removing aromatic hydrocarbons from coke-oven gas. The coke-oven gas is contacted with a wash liquid in a gas scrubber, and aromatic hydrocarbons are separated by absorption from the coke-oven gas. Subsequently the wash liquid enriched with aromatic hydrocarbons is heated, and the aromatic hydrocarbons are stripped from the wash liquid using water vapor. After cooling the wash liquid is finally returned to the gas scrubber. According to the invention biodiesel is used as the wash liquid.

Abstract: The invention relates to a method of making alkali metal silicide compositions, and the compositions resulting from the method, comprising mixing an alkali metal with silicon and heating the resulting mixture to a temperature below about 475° C. The resulting compositions do not react with dry O2. Also, the invention relates to sodium silicide compositions having a powder X-ray diffraction pattern comprising at least three peaks with 2Theta angles selected from about 18.2, 28.5, 29.5, 33.7, 41.2, 47.4, and 56.2 and a solid state 23Na MAS NMR spectra peak at about 18 ppm. Moreover, the invention relates to methods of removing a volatile or flammable substance in a controlled manner. Furthermore, the alkali metal silicide compositions of the invention react with water to produce hydrogen gas.

Abstract: A method of removing an alumina layer around a main pole layer during perpendicular magnetic recording head fabrication is disclosed. The alumina etch sequence includes immersing a substrate in a series of aqueous solutions purged with an inert gas to remove oxygen thereby avoiding corrosion of the main pole. Initially, the substrate is soaked and heated in deionized (DI) water. Once heated, the substrate is immersed in an etching bath at about 80° C. and pH 10.5. Bath chemistry is preferably based on Na2CO3 and NaHCO3, and N2 purging improves etch uniformity and reduces residue. Thereafter, the substrate is rinsed in a second DI water bath between room temperature and 80° C., and finally subjected to a quick dump rinse before drying. Inert gas, preferably N2, may be introduced into the aqueous solutions through a purge board having a plurality of openings and positioned proximate to the bottom of a bath container.

Abstract: A foreign matter removal method that removes foreign matter attached to a surface of a substrate having been subjected to predetermined processing. An edge of a rotating substrate mounted on a mounting stage is irradiated with misalignment measurement laser light. The misalignment measurement laser light other than the laser light blocked by the edge of the substrate is received, and power thereof is detected. The amount of misalignment of the substrate is calculated based on the detected power of the misalignment measurement laser light and a detected rotation angle of the rotating substrate. The misalignment of the substrate is corrected for based on the calculated amount of misalignment. After that, foreign matter removal laser light is irradiated, and a process gas that is to react with the foreign matter is jetted to the edge of the substrate. Consequently, the foreign matter attached to the substrate is decomposed and removed.

Abstract: There is provided a method for exchanging an atmosphere of a vacuum chamber of a processing apparatus configured to process a substrate under a vacuum environment. The method includes the steps of holding the substrate using a holding unit provided in the vacuum chamber, and exchanging the atmosphere of the vacuum chamber through exhaustion or air supply, wherein the exchanging step maintains a pressure of the vacuum chamber in a range between 10 Pa and 10000 Pa for a period between 10 seconds and 600 seconds while controlling a temperature of a dust collection unit provided in the vacuum chamber lower than a temperature of the substrate.

Abstract: A method for carrying out a dishwashing program in an automatic dishwasher includes a washing step, an intermediate cleaning and a clear rinsing. The washing step includes heating water present in a tub of the dishwasher using at least a condenser of a heat pump. The clear rinsing includes heating water present in the dishwasher tub using the condenser together with an electric heater.

Abstract: A method for cleaning used beer kegs employing an aqueous solution of phosphoric acid, nitric acid and one or more surfactants, e.g., a detergent and/or wetting agent. Preferably, the aqueous cleaning solution has a total nitric acid content of 12 wt % or less. Complete cleaning can be achieved without using any caustic. The cleaning solution can be recycled repeatedly to clean multiple kegs on numerous occasions over a period of time, e.g., several weeks.

Abstract: A fluoride ion cleaning method includes generating hydrogen fluoride (HF) gas in-situ in a cleaning retort; contacting a part in need of cleaning with the generated HF gas; scrubbing an initial effluent stream in-situ to substantially remove residual HF gas therefrom; and passing the scrubbed effluent gas stream out of the cleaning retort. In an exemplary method, a liquid or gaseous halogenated feedstock is introduced into a cleaning retort; hydrogen gas is introduced into the cleaning retort, HF gas is generated by a reaction of the feedstock with hydrogen gas at a sufficient temperature. In an exemplary method, only HF gas generated in-situ or reconstituted in-situ is utilized in the cleaning process.

Abstract: A top assembly for a processing chamber having a back plate and a hub is provided. The back plate has a first portion and a second portion. The first portion is connected to the second portion through a central region of the back plate, wherein a gap is defined between opposing surfaces of the first and second portions outside the central region. The first portion includes an embedded heating element. The hub is affixed to a top surface of the second portion of the back plate over the central region. The hub has a top surface with a plurality of channel openings defined within a central region of the hub and a bottom surface having a central extension with a plurality of channels defined therethrough. The bottom surface includes an annular extension spaced apart from the central extension.

Abstract: A method for rinsing crockery in a dishwashing machine is disclosed. The dishwashing machine includes a circulation pump, a water heater, an upper spray arm and a lower spray arm both alternatively fed by the circulation pump. The method includes the step of heating of the rinsing circulated water up to a maximum predetermined value. The method further includes the step of interrupting the feeding of the lower spray arm when a threshold water temperature is reached so that only the upper spray arm is fed by the circulated water.

Abstract: A system for cleaning the interior surface of an oven appliance using heat and steam cycles is provided. More particularly, the present invention uses a heat cycle to break down water insoluble food residues into soluble materials that are then cleaned by a steam cycle. Following the steam cycle, the remaining food residues can be removed from the interior surface of the oven appliance.

Abstract: An automatic dishwasher having a heater shared by the recirculation system and the air supply system to heat the liquid in the recirculation system and the air in the air supply system.

Abstract: Improved removal of ion-implanted photoresist in a single wafer front-end wet processing station is achieved by dissolving gaseous ozone into relatively cool inorganic acid, dispensing the acid ozone mixture onto a wafer, and rapidly heating the surface of the wafer to a temperature at least 30° C. higher than the temperature of the acid ozone mixture.

Abstract: A reticle is cleaned by vapor condensing on the active surface of the reticle. An embodiment includes positioning the reticle in a cleaning chamber having a bottom surface, with the active surface of the reticle facing the bottom surface of the cleaning chamber, and directing vapor at the active surface of the reticle. Embodiments further include filling a reservoir in a bottom portion of the cleaning chamber with liquid and directing vapor by heating the liquid. Embodiments further include cooling the reticle concurrently with heating the liquid. Embodiments further include rotating the reticle concurrently with heating the liquid and cooling the reticle. Embodiments further include emptying the reservoir and dry spinning the reticle, subsequent to cleaning the reticle.

Abstract: Disclosed is a substrate processing apparatus including a processing vessel in which a target substrate W is processed by using a high-pressure fluid in a supercritical state or a subcritical state, and pipes that are divided into a first pipe member and a second pipe member in a flowing direction of the fluid and circulate the fluid are connected to processing vessel. A connecting/disconnecting mechanism moves at least one of first and second pipe members between a connection position and a separation position of first pipe member and the second pipe member, and opening/closing valves are installed in each of first and second pipe members and are closed at the time of separating pipe members.

Abstract: A washing machine that is capable of providing a stable washing mode even when a washing-related device is abnormal during a washing operation is disclosed. When a steam generation unit, which generates high-temperature steam into a drum, is abnormal, the operation of the steam generation unit is interrupted, and an operation for driving a washing heater mounted in a tub is performed, or an operation for driving a drying unit, which supplies high-temperature dry hot air into the drum, is performed. A steam substituting algorithm is provided when the steam generation unit is abnormal during the operation using the high-temperature steam. Consequently, the interruption of the washing operation due to the abnormal steam injection function is prevented, and therefore, the reliability of the product is improved while the inconvenience of use is minimized.

Abstract: The present application provides a pulsed detonation cleaning system for cleaning an enclosed structure. The pulsed detonation cleaning system may include a pulsed detonation combustor cleaner and an external fuel-air flow. The pulsed detonation combustor cleaner delivers the external fuel-air flow into the enclosed structure and ignites the external fuel-air flow to clean the enclosed structure.

Abstract: A system and method for removing an organic residue from a charged particle beam system includes a conduit that is coupled to the column and is for adding oxygen to the column. A heater is coupled to the column and is for increasing the temperature in the column. A pump is coupled to the column and is for removing a gas from the chamber, wherein the gas is a byproduct of a chemical reaction of the organic residue and the oxygen.

Abstract: Compositions and methods useful for removing organic substances from substrates, for example, electronic device substrates such as microelectronic wafers or flat panel displays, are provided. Methods are presented that apply a minimum volume of a composition as a coating to the inorganic substrate whereby sufficient heat is added and immediately rinsed with water to achieve complete removal. The compositions and methods may be suitable for removing and completely dissolving photoresists of the positive and negative varieties as well as thermoset polymers from electronic devices.

Abstract: A process is provided for treating a semiconductor wafer at a target wafer temperature. This process includes the following steps: a) determining the target wafer temperature of the semiconductor wafer during a given wafer treatment process step; b) providing a treatment chamber having at least one semiconductor wafer disposed therein; c) dispensing water vapor into the treatment chamber in an amount to provide the chamber with an atmospheric environment having a dew point sufficiently close to the target wafer temperature to provide a temperature regulating effect; and d) initiating the given wafer treatment process step when the atmospheric environment of the treatment chamber is at the dew point of step c).

Abstract: A method for controlling operation of a washing machine is provided. The method may include performing heated washing courses at different temperatures while also selectively controlling an operating rate of a driving motor to enhance sterilizing effects on items being washed while protecting against damage to the items being washed. Performing these heated washing courses may include selecting an infant clothes oriented washing program from a plurality of washing programs, and performing a washing operation in accordance with one of a plurality of operating modes associated with the selected infant clothes oriented washing program, including controlling at least one of a washing course temperature or an operating rate of a driving motor of the washing machine.

Abstract: A method of cleaning a contaminated composite part, so as to provide a surface suitable for adhesive bonding. The method includes applying a wicking medium adjacent to a surface of the contaminated composite material. Then applying a solvent medium soaked in a cleaning solution adjacent to the wicking medium. Then vapor barrier is applied adjacent to the solvent medium. Next a breather material is applied adjacent to the vapor barrier. Then a vacuum bagging film with a vacuum port is applied and sealed against the composite part. The composite part is then heated and vented to remove contaminates from the composite material.

Abstract: A dishwasher and associated control method are provided wherein a water supply manifold supplies a wash chamber with wash liquid. The supply manifold includes a hot water inlet from an external hot water source and a separate inlet from a storage tank, and is configured to be selectively actuated between the hot water inlet or storage tank inlet. A controller is in communication with the supply manifold and is configured to act on a signal that is indicative of an actual or pre-defined high electricity demand period on a power supply to the hot water source. The controller is configured to generate an output control signal to the supply manifold to cause the manifold to direct substantially only water from the storage tank to the wash chamber during the high electricity demand period.

Abstract: A substrate processing method includes a cleaning processing step, a mixed organic solvent supplying step, and a fluorine organic solvent supplying step. The cleaning processing step is a step of cleaning a main surface of a substrate by supplying deionized water to the substrate. The mixed organic solvent supplying step is a step of supplying a fluid of a mixed organic solvent to the main surface of the substrate after the cleaning processing step. The fluid of the mixed organic solvent contains a fluid of a water-soluble organic solvent and a fluid of a fluorine organic solvent having a smaller surface tension than that of the deionized water and a lower water solubility than that of the fluid of the water-soluble organic solvent. The fluorine organic solvent supplying step is a step of supplying the fluid of the fluorine organic solvent to the main surface of the substrate without supplying the fluid of the water-soluble organic solvent after the mixed organic solvent supplying step.

Abstract: A CVD vacuum vessel including an electrically conductive partition plate which divides the interior of the vacuum vessel into a plasma generating space and a film-deposition processing space, and an electrically conductive spiral shield. The electrically conductive partition plate has a plurality of through-holes connecting the plasma generating space to the film-deposition processing space and a heater for heating the electrically conductive partition plate. The partitioning plate is mounted to the vacuum vessel by means of a mounting screw such that electrical contact between the partitioning plate and the vacuum vessel is achieved through said spiral shield.

Abstract: Described herein are systems and methods for reducing cumulative deposition and unwanted secondary thermal reactions in pyrolysis and other thermal conversion processes. In an embodiment, a system comprises a device, referred to as a reamer, for removing product deposits between thermal conversion and condensation operations of a pyrolysis process. The reamer may comprise, but is not limited to, a mechanical reciprocating rod or ram, a mechanical auger, a drill bit, a high-temperature wiper, brush, or punch to remove deposits and prevent secondary reactions. Alternatively or in addition, the reamer may use a high-velocity curtain or jet (i.e., a hydraulic or pneumatic stream) of vapor, product gas, recycle gas, other gas jet or non-condensing liquid to remove deposits. Preferably, the reamer removes deposits during the pyrolysis process allowing for continuous operation of the pyrolysis process.

Abstract: There is an apparatus for cleaning a substrate (5) mounted on a moveable platen. In an example embodiment, the apparatus comprises a first chamber (20), the first chamber has solvent-dispensing nozzles (25); the solvent-dispensing nozzles wet the substrate surface (5) with a solvent (7) as the platen transports the substrate. The platen moves in a predetermined direction and at a predetermined scan velocity as it transports the substrate into a process chamber. The process chamber has a hot source (30) at a predetermined height (h) from the substrate surface (5); it provides heat energy directed toward the substrate surface, the heat energy evaporates the solvent (7) dispensed on the substrate surface; the solvent evaporation removes particulates (35) from the substrate surface, as the platen transports the substrate from the first chamber (20) into the process chamber. Substrates cleaned may include precision photo-masks, or wafers.

Abstract: A system and method for removing an organic residue from a charged particle beam system includes a conduit that is coupled to the column and is for adding oxygen to the column. A heater is coupled to the column and is for increasing the temperature in the column. A pump is coupled to the column and is for removing a gas from the chamber, wherein the gas is a byproduct of a chemical reaction of the organic residue and the oxygen.

Abstract: A cooling device (70) for cooling a work piece (9) that has reached a high temperature due to the implementation of a closing operation in which a bottom portion (9c) is formed by closing an end portion of the tubular work piece (9) comprises a tilting mechanism (151) which tilts the work piece (9) such that the bottom portion (9c) faces downwards and a cooling water tank (155) storing cooling water. The bottom portion (9c) of the work piece (9) tilted by the tilting mechanism (151) is submerged in cooling water stored in the cooling water tank (155).

Abstract: A method and system for measuring contamination, such as metal contamination, on a substrate. A dry cleaning system is utilized for non-destructive, occasional removal of contamination, such as metal containing contamination, on a substrate, whereby a monitoring system coupled to the exhaust of the dry cleaning system is employed to determine the relative level of contamination on the substrate prior to dry cleaning.

Abstract: A method for using a film formation apparatus for a semiconductor process includes setting an idling state where a reaction chamber of the film formation apparatus accommodates no product target substrate therein, and then, performing a purging process of removing a contaminant present in an inner surface of the reaction chamber by causing radicals to act on the inner surface of the reaction chamber. The radicals are generated by activating a purging process gas containing oxygen and hydrogen as elements.

Abstract: A method for using a film formation apparatus for a semiconductor process to form a thin film on a target substrate inside a reaction chamber includes performing a cleaning process to remove a by-product film deposited on a predetermined region in a gas route from a film formation gas supply system, which supplies a film formation gas contributory to film formation, through the reaction chamber to an exhaust system, by alternately repeating an etching step and an exhaust step a plurality of times in a state where the reaction chamber does not accommodate the target substrate. The etching step includes supplying a cleaning gas in an activated state for etching the by-product film onto the predetermined region, thereby etching the by-product film. The exhaust step includes stopping supply of the cleaning gas and exhausting gas by the exhaust system from a space in which the predetermined region is present.

Abstract: A method, system and device to use a dilute alkaline solution held at sub-critical temperature and pressure conditions to remove rapidly chloride ions from corroded iron artifacts.

Abstract: Methods for removing residue from interior surfaces of process chambers are provided herein. In some embodiments, a method of conditioning interior surfaces of a process chamber may include maintaining a process chamber at a first pressure and at a first temperature of less than about 800 degrees Celsius; providing a process gas to the process chamber at the first pressure and the first temperature, wherein the process gas comprises chlorine and nitrogen to remove residue disposed on interior surfaces of the process chamber; and increasing the pressure in the process chamber from the first pressure to a second pressure while continuing to provide the process gas to the process chamber.

Abstract: A method for cleaning a thermode tip including applying an energy pulse to the thermode tip. The energy pulse involves raising the temperature of the thermode tip higher than the working temperature of the thermode tip. A method for cleaning a thermode tip may include periodically performing a predetermined number of soldering cycles at a working temperature; and applying an energy pulse to the thermode tip.