Abstract: Disclosed is a fabrication method for constructing low-cost, morphologically stable, highly ordered, and crystalized layered organic solar cells. The method implements self-assembled molecular monolayers as building blocks (a bottom up strategy) to fabricate a device. This approach enables the creation of a layered material with desired morphology in a controlled way. In such geometry, optoelectronic and transport properties can be controlled by metal atom inclusions into the molecular monolayers, which presents a range of options in creating photo-sensitive molecular building blocks to cover a wide range of the solar spectra from IR to visible to UV.

Abstract: A solar or photovoltaic (PV) system that includes a PV device with an upper surface configured for receiving sunlight and converting the received sunlight into electrical energy. An infrared (IR) reflecting film is placed over the upper surface to increase the efficiency of the PV device by retaining its operating temperature in more desired ranges. The IR reflecting film includes a substrate with a top surface and a bottom surface, and the bottom surface is mated with the upper surface of the PV device. The IR reflecting film also includes a plurality of structures, each with a recessed surface, formed on the top surface of the substrate. The IR reflecting film includes a reflective mask on the top surface of the substrate that includes reflective elements each disposed in the structures' recessed surfaces. In use, the IR reflecting film reflects sunlight having a wavelength greater than about 950 nanometers (nm).

Abstract: Provided is a novel method for producing a laminate that serves as an electron transport layer and an optically transparent electrode layer of a perovskite solar cell having, in the following order, an optically transparent electrode layer, an electron transport layer, a perovskite crystal layer, a hole transport layer, and a current collecting layer. The method involves forming a titanium oxide layer that serves as the electron transport layer on a member that serves as the optically transparent electrode layer by utilizing said member for cathode polarization in a treatment liquid containing a Ti component.

Abstract: Provided are a solar cell and a photovoltaic module. The solar cell includes: a silicon substrate; a passivation layer provided on a surface of the silicon substrate; a first electrode conductor at least partially arranged on the passivation layer and including a body portion and protruding portions located on two ends of the body portion; and a second electrode conductor at least partially arranged on the passivation layer and at least partially overlapping with the protruding portions. A length of each of the protruding portions in a width direction of the body portion is greater than a width of the body portion.

Abstract: A new type of charge transport layer based on organometal halide perovskite for highly efficient organic light emitting diodes (OLEDs) is demonstrated. By solution processing of halide perovskite precursors, smooth essentially pure perovskite thin films may be prepared with high transparency and conductivity. Solution processed multilayer OLED with this perovskite-based hole transport layer outperforms a device with a PEDOT:PSS layer.

Abstract: A method for preparing photoactive perovskite materials. The method comprises the step of preparing a germanium halide precursor ink. Preparing a germanium halide precursor ink comprises the steps of: introducing a germanium halide into a vessel, introducing a first solvent to the vessel, and contacting the germanium halide with the first solvent to dissolve the germanium halide. The method further comprises depositing the germanium halide precursor ink onto a substrate, drying the germanium halide precursor ink to form a thin film, annealing the thin film, and rinsing the thin film with a second solvent and a salt.

Abstract: The present disclosure provides a photosensitive device, including: a photosensitive layer (1) formed by stacking a plurality of fillers, each of the fillers being a uniformly distributed nanopore structure, the nanopore structure being filled with gaseous selenium; a first electrode (2) provided on a light incident side of the photosensitive layer (1); and a second electrode (3) provided on a light exit side of the photosensitive layer (1). The present disclosure further provides an X-ray detector and a display device.

Abstract: The present disclosure relates to a method that includes treating a liquid that includes a first precursor at a concentration C1, a second precursor at a concentration C2, a third precursor at a concentration C3, and an additive at a concentration C4, where the treating results in a perovskite, each of C1, C2, and C3 are between 0.

Abstract: The present invention aims at providing a lead-free glass composition that can be soften and flowed at a firing temperature that is equal to or lower than that of conventional low melting point lead glass. Furthermore, the present invention aims at providing a lead-free glass composition having fine thermal stability and fine chemical stability in addition to that property. The lead-free glass composition according to the present invention is characterized by comprising at least Ag2O, V2O5 and TeO2 when the components are represented by oxides, wherein the total content ratio of Ag2O, V2O5 and TeO2 is 75 mass % or more. Preferably, the lead-free glass composition comprises 10 to 60 mass % of Ag2O, 5 to 65 mass % of V2O5, and 15 to 50 mass % of TeO2.

Abstract: A method for the preparation of copper indium gallium diselenide/disulfide (CIGS) nanoparticles utilizes a copper-rich stoichiometry. The copper-rich CIGS nanoparticles are capped with organo-chalcogen ligands, rendering the nanoparticles processable in organic solvents. The nanoparticles may be deposited on a substrate and thermally processed in a chalcogen-rich atmosphere to facilitate conversion of the excess copper to copper selenide or copper sulfide that may act as a sintering flux to promote liquid phase sintering and thus the growth of large grains. The nanoparticles so produced may be used to fabricate CIGS-based photovoltaic devices.

Abstract: According to the embodiment, there is provided a solar cell including: a back electrode layer; a light absorbing layer on the back electrode layer; a buffer layer on the light absorbing layer; and a front electrode layer on the buffer layer, wherein the front electrode layer comprises an intrinsic region and a doping region having a conductive dopant, and a concentration of the conductive dopant is gradually lowered in upward and downward directions from an excess doping region of the doping region.

Abstract: This disclosure relates to methods that include depositing a first component and a second component to form a film including a plurality of nanostructures, and coating the nanostructures with a hydrophobic layer to render the film superhydrophobic. The first component and the second component can be immiscible and phase-separated during the depositing step. The first component and the second component can be independently selected from the group consisting of a metal oxide, a metal nitride, a metal oxynitride, a metal, and combinations thereof. The films can have a thickness greater than or equal to 5 nm; an average surface roughness (Ra) of from 90 to 120 nm, as measured on a 5 ?m×5 ?m area; a surface area of at least 20 m2/g; a contact angle with a drop of water of at least 120 degrees; and can maintain the contact angle when exposed to harsh conditions.

Abstract: A method of preparing Group XIII selenide nanoparticles comprises reacting a Group XIII ion source with a selenol compound. The nanoparticles have an MxSey Semiconductor core (where M is In or Ga) and an organic capping ligand attached to the core via a carbon-selenium bond. The selenol provides a source of selenium for incorporation into the semiconductor core and also provides the organic capping ligand. The nanoparticles are particularly suitable for solution-based methods of preparing semiconductor films.

Abstract: A photovoltaic device comprises a back reflective coating structure to provide back scattering of light that passes through the photovoltaic device, an absorber structure containing chalcogenide materials, and a top scattering antireflective structure deposited on the top subcell. Illustratively, a multi-junction structure comprises a bottom subcell deposited on the back reflective coating structure, the bottom subcell having a lower band gap, higher index material embedded therein, to provide lateral propagation of light that passes through the photovoltaic device, and a top subcell deposited on the bottom subcell. The multi-junction structure can comprise chalcogenide materials, in which case the top subcell is embedded with an intermediate band gap absorber material.

Abstract: A method of manufacture of I-III-VI-absorber photovoltaic cells involves sequential deposition of films comprising one or more of silver and copper, with one or more of aluminum indium and gallium, and one or more of sulfur, selenium, and tellurium, as compounds in multiple thin sublayers to form a composite absorber layer. In an embodiment, the method is adapted to roll-to-roll processing of photovoltaic cells. In an embodiment, the method is adapted to preparation of a CIGS absorber layer having graded composition through the layer of substitutions such as tellurium near the base contact and silver near the heterojunction partner layer, or through gradations in indium and gallium content. In a particular embodiment, the graded composition is enriched in gallium at a base of the layer, and silver at the top of the layer. In an embodiment, each sublayer is deposited by co-evaporation of copper, indium, gallium, and selenium, which react in-situ to form CIGS.

Abstract: An elongate photovoltaic (PV) module for use in a solar energy conversion plant for the production of electricity from incident light, the PV-module comprising a top portion with a support panel (G) carrying on a front side a plurality of electrically connected PV cells (D), and a transparent protective layer (A) sealed to the support panel (G) so as to encapsulate the PV-cells (D) between the support panel (G) and the protective layer (A), wherein prior to installation of the PV-module at the deployment site a collapsible portion of the PV-module is configured to be collapsible in a longitudinal direction by folding and/or rolling, wherein the collapsible portion includes at least the top portion, wherein the PV-module further comprises one or more integrated ballast chambers (I) in a bottom portion of the PV-module arranged on a rear side of the support panel (G), wherein said integrated ballast chamber (I) after installation of the PV-module at the deployment site contains an amount of a ballasting materia

Abstract: A thin film photovoltaic device (100) with a tunable, minimally conductive buffer (128) layer is provided. The photovoltaic device (100) may include a back contact (150), a transparent front contact stack (120), and an absorber (140) positioned between the front contact stack (120) and the back contact (150). The front contact stack (120) may include a low resistivity transparent conductive oxide (TCO) layer (124) and a buffer layer (128) that is proximate to the absorber layer (140). The photovoltaic device (100) may also include a window layer (130) between the buffer layer (128) and the absorber (140). In some cases, the buffer layer (128) is minimally conductive, with its resistivity being tunable, and the buffer layer (128) may be formed as an alloy from a host oxide and a high-permittivity oxide. The high-permittivity oxide may further be chosen to have a bandgap greater than the host oxide.

Abstract: In order to provide a solar cell device having increased reliability, the present invention is provided with: a substrate having a semiconductor region containing silicon at one primary surface side; a first electrode provided on the one primary surface and containing silver as the primary component; and a second electrode connected to the first electrode on the one primary surface and containing aluminum as the primary component. The first electrode is a solar cell device containing elemental tin.

Abstract: An organic light-emitting diode includes a first electrode, an intermediate layer on the first electrode, and a second electrode on the intermediate layer. The intermediate layer includes an emission layer including an organic material, and a functional layer between the second electrode and the emission layer and including at least one of a metal compound and a semiconductor compound including at least one of an oxygen atom and a sulfur atom. An oxygen concentration in the functional layer increases toward the second electrode, and a sulfur concentration in the functional layer increases toward the emission layer.

Abstract: A compound-based thin film solar cell which has a high photovoltaic conversion efficiency is obtained. The compound-based thin film solar cell is provided with substrate (1), back surface electrode layer (2) formed on substrate (1), p-type light absorption layer (3) formed on back surface electrode layer (2), n-type high resistance buffer layer (4) formed on p-type light absorption layer (3), and ZnO film (5) formed on n-type high resistance buffer layer (4), where n-type high resistance buffer layer (4) includes a first buffer layer (4A) formed on the p-type light absorption layer (3) and a second buffer layer (4B) formed on the first buffer layer (4A) and where the second buffer layer (4B) is formed by a material which has a lattice constant closer to the lattice constant of the ZnO film (5) than the first buffer layer (4A).

Abstract: A method of manufacturing a flexible printed circuit board that includes a component mounting section having lands, a plurality of flexible cable sections having wirings and extending in different directions from the component mounting section, and a connection section having terminals connected with the land through the wiring, the method including manufacturing partial FPCs in a sheet in a unit of a partial FPC that includes a partial component mounting section that is a part of the component mounting section, a cable section extending from the partial component mounting section, and a connection section disposed in the cable section, cutting out the partial FPC from the sheet, performing an alignment using alignment targets of the partial FPC and a support plate so that the partial component mounting sections of respective partial FPCs configure the component mounting section, and fixing the partial FPCs onto the support plate.

Abstract: Photovoltaic devices such as solar cells, hybrid solar cell-batteries, and other such devices may include an active layer disposed between two electrodes, the active layer having perovskite material and other material such as mesoporous material, interfacial layers, thin-coat interfacial layers, and combinations thereof. The perovskite material may be photoactive. The perovskite material may be disposed between two or more other materials in the photovoltaic device. Inclusion of these materials in various arrangements within an active layer of a photovoltaic device may improve device performance. Other materials may be included to further improve device performance, such as, for example: additional perovskites, and additional interfacial layers.

Abstract: Photovoltaic devices such as solar cells, hybrid solar cell-batteries, and other such devices may include an active layer having perovskite material and copper-oxide or other metal-oxide charge transport material. Such charge transport material may be disposed adjacent to the perovskite material such that the two are adjacent and/or in contact. Inclusion of both materials in an active layer of a photovoltaic device may improve device performance. Other materials may be included to further improve device performance, such as, for example: one or more interfacial layers, one or more mesoporous layers, and one or more dyes.

Abstract: The invention provides an optoelectronic device comprising a porous material, which porous material comprises a semiconductor comprising a perovskite. The porous material may comprise a porous perovskite. Thus, the porous material may be a perovskite material which is itself porous. Additionally or alternatively, the porous material may comprise a porous dielectric scaffold material, such as alumina, and a coating disposed on a surface thereof, which coating comprises the semiconductor comprising the perovskite. Thus, in some embodiments the porosity arises from the dielectric scaffold rather than from the perovskite itself. The porous material is usually infiltrated by a charge transporting material such as a hole conductor, a liquid electrolyte, or an electron conductor. The invention further provides the use of the porous material as a semiconductor in an optoelectronic device. Further provided is the use of the porous material as a photosensitizing, semiconducting material in an optoelectronic device.

Abstract: Disclosed are an ink composition for manufacturing a light absorption layer including metal nano particles and a method of manufacturing a thin film using the same, more particularly, an ink composition for manufacturing a light absorption layer including copper (Cu)-enriched Cu—In bimetallic metal nano particles and Group IIIA metal particles including S or Se dispersed in a solvent and a method of manufacturing a thin film using the same.

Abstract: A method for improving a nominal output of a thin-film solar module with a laminated composite of two substrates which are connected to each other by at least one adhesive layer and between which there are solar cells connected in series is described. The method relates to solar cells being illuminated with an artificial light with an irradiance of at least 5 kW/m2.

Abstract: A method of producing a metal chalcogenide dispersion usable in forming a light absorbing layer of a solar cell, the method including: a metal chalcogenide nano particle formation step in which at least one metal or metal compound selected from the group consisting of a group 11, 12, 13, 14 or 15 metal or metal compound, a water-containing solvent and a group 16 element-containing compound are mixed together to obtain metal chalcogenide nano particles; and an addition step in which a compound (1) represented by general formula (1) is added to the metal chalcogenide nano particles, thereby obtaining a metal chalcogenide dispersion (wherein R1 to R4 each independently represents an alkyl group, an aryl group or a hydrogen atom; provided that at least one of R1 to R4 represents a hydrocarbon group).

Abstract: An electrode for a photovoltaic device includes a Mo layer and a sulfurization-resistant layer formed on the Mo layer. The sulfurization-resistant layer contains at least one element X selected from a group consisting of Nb, Ti, Ta, Au, V, Mn, and W. A molar ratio of the element X to Mo contained in the sulfurization-resistant layer preferably satisfies X/(Mo+X)>about 0.5. A thickness (initial thickness) of the sulfurization-resistant layer before being exposed to sulfurizing atmosphere is preferably about 3 to about 200 nm.

Abstract: In one embodiment, a method includes depositing a photoactive layer onto a first substrate, depositing a contact layer onto the photoactive layer, attaching a second substrate onto the contact layer, and removing the first substrate from the photoactive layer, contact layer, and second substrate.

Abstract: The present invention provides strategies for making high quality CIGS photoabsorbing materials from precursor films that incorporate a sub-stoichiometric amount of chalcogen(s). Chalcogen(s) are incorporated into the CIGS precursor film via co-sputtering with one or more other constituents of the precursor. Optional annealing also may be practiced to convert precursor into more desirable chalcopyrite crystalline form in event all or a portion of the precursor has another constitution. The resultant precursors generally are sub-stoichiometric with respect to chalcogen and have very poor electronic characteristics. The conversion of these precursors into CMS photoabsorbing material via chalcogenizing treatment occurs with dramatically reduced interfacial void content. The resultant CIGS material displays excellent adhesion to other layers in the resultant photovoltaic devices.

Abstract: Embodiments relate to a method including forming a layer of copper zinc tin sulfide (CZTS) on a first layer of molybdenum (Mo) and annealing the CZTS layer and the first Mo layer to form a layer of molybdenum disulfide (MoS2) between the layer of CZTS and the first layer of Mo. The method includes forming a back contact on a first surface of the CZTS layer opposite the first Mo layer and separating the first Mo layer and the MoS2 layer from the CZTS layer to expose a second surface of the CZTS layer opposite the first surface. The method further includes forming a buffer layer on the second surface of the CZTS layer.

Abstract: A quantum dot (QD) sensitized wide bandgap (WBG) semiconductor heterojunction photovoltaic (PV) device comprises an electron conductive layer; an active photovoltaic (PV) layer adjacent the electron conductive layer; a hole conductive layer adjacent the active PV layer; and an electrode layer adjacent the hole conductive layer. The active PV layer comprises a wide bandgap (WBG) semiconductor material with Eg?2.0 eV, in the form of a 2-dimensional matrix defining at least two open spaces, and a narrower bandgap semiconductor material with Eg<2.0 eV, in the form of quantum dots (QD's) filling each open space defined by the matrix of WBG semiconductor material and establishing a heterojunction therewith. The active PV layer is preferably fabricated by a co-sputter deposition process, and the QD's constitute from about 40 to about 90 vol. % of the active PV layer.

Abstract: A method for fabricating a photovoltaic device includes forming a film including titanium on a conductive layer formed on a substrate. An absorber layer is formed including a Cu—Zn—Sn containing chalcogenide compound with a kesterite structure of the formula: Cu2-xZn1+ySn(S1-zSez)4+q wherein 0?x?1; 0?y?1; 0?z?1; ?1?q?1 (CZTS) on the film. The absorber layer is annealed to diffuse titanium therein and to recrystallize the CZTS material of the film. A buffer layer is formed on the absorber layer, and a transparent conductive layer is formed on the buffer layer.

Abstract: A method for fabricating a photovoltaic device includes forming a film including titanium on a conductive layer formed on a substrate. An absorber layer is formed including a Cu—Zn—Sn containing chalcogenide compound with a kesterite structure of the formula: Cu2-xZn1+ySn(S1-zSez)4+q wherein 0?x?1; 0?y?1; 0?z?1; ?1?q?1 (CZTS) on the film. The absorber layer is annealed to diffuse titanium therein and to recrystallize the CZTS material of the film. A buffer layer is formed on the absorber layer, and a transparent conductive layer is formed on the buffer layer.

Abstract: In one example embodiment, a method includes sputtering one or more absorber layers over a substrate. In a particular embodiment, the substrate is pre-heated to a substrate temperature of at least approximately 300 degrees Celsius prior to the sputtering and during the sputtering of each of one or more of the absorber layers, and the sputtering of at least one of the absorber layers is performed in a sputtering atmosphere having a pressure of at least 0.5 Pascals. Additionally, in a particular embodiment, the sputtering of at least one of the absorber layers comprises sputtering from a sputter target that comprises a chalcogenide alloy that comprises copper (Cu) and one or more of sulfur (S), selenium (Se), or tellurium (Te).

Abstract: The present invention provides improved chalcogen-containing, photovoltaic structures as well as related compositions, photovoltaic devices incorporating these structures, methods of making these structures and devices, and methods of using these structures and devices. According to principles of the present invention, the adhesion of PACB compositions is improved through the use of chalcogen-containing tie layers.

Abstract: A solar cell according to the disclosure includes a back electrode layer; and a light absorbing layer on the back electrode layer, wherein the light absorbing layer includes an undoped region and a doping region on the undoped region, and the doping region includes zinc. A method of fabricating a solar cell according to the disclosure includes forming a back electrode layer on a substrate; forming a preliminary light absorbing layer on the back electrode layer; forming a dopant supply layer on the preliminary light absorbing layer; and diffusing the dopant supply layer.

Abstract: A method for fabricating thin film solar cells for a concentrated photovoltaic system uses three shadow masks. The first mask, used to deposit a back contact layer, has multiple horizontal and vertical lines defining columns and rows of cells, and multiple tabs each located in a cell along a center of a vertical border. The second mask, used to deposit a CIGS absorption layer, a window layer and a transparent contact layer, is similar to the first mask except the tabs are located along the opposite vertical border of the cells. The third mask, used to deposit a metal grid layer, has multiple bus bar openings and finger openings. Each bus bar opening is located along a horizontal center line of a cell and overlaps the second tab of a neighboring cell. The cells in a horizontal row are connected in series, forming a linear solar receiver.

Abstract: A CIGS film production method is provided which ensures that a CIGS film having a higher conversion efficiency can be produced at lower costs at higher reproducibility even for production of a large-area device. A CIGS solar cell production method is also provided for producing a CIGS solar cell including the CIGS film. The CIGS film production method includes: a stacking step of stacking a layer (A) containing indium, gallium and selenium and a layer (B) containing copper and selenium in a solid phase in this order over a substrate; and a heating step of heating a stacked structure including the layer (A) and the layer (B) to melt a compound of copper and selenium of the layer (B) into a liquid phase to thereby diffuse copper from the layer (B) into the layer (A) to permit crystal growth to provide a CIGS film.

Abstract: The present invention relates to a layer system (1) for thin-film solar cells and solar modules based on CIS-absorbers (4). The layer system (1) according to the invention has a buffer layer (4) made of In2(S1?x,Sex)3+?, wherein 0?x?1 and ?1???1. Additionally, the buffer layer (5) is amorphously designed. With this buffer layer (5), the disadvantages of CdS-buffers frequently used to date, namely toxicity and poor process integration, are overcome, whereby in addition to high efficiency, high long-term stability is also achieved; and thus again the disadvantages of conventional buffer layers alternative to CdS do not exist.

Abstract: A photovoltaic device includes a substrate; a back contact layer disposed on the substrate; an absorber layer for photo absorption disposed above the back contact layer; a buffer layer disposed above the absorber layer; a front contact layer disposed above the buffer layer; and a plasmonic nanostructured layer having a plurality of nano-particles, wherein the plasmonic nanostructured layer is between a topmost back contact layer surface and the absorber layer.

Abstract: The object of the invention is a substrate for photovoltaic cell comprising at least one sheet of float glass provided on a face of at least one electrode, characterized in that said glass has a chemical composition comprising the following constituents, in a weight content that varies within the limits defined below: SiO2 69-75% Al2O3 ?0-3% CaO + MgO 11-16.2%? MgO ?0-6.5% Na2O 9-12.4%? K2O ?0-1.5%.

Abstract: Embodiments of the invention generally provide hydrogen-doped and/or fluorine-doped transparent conducting oxide (TCO) materials and processes for forming such doped TCO materials. In one embodiment, a method for fabricating a doped TCO on a substrate surface includes forming a TCO material on a substrate, exposing the TCO material to a hydrogen plasma while forming a hydrogen-doped TCO material during an atmospheric pressure plasma (APP) process, wherein the hydrogen-doped TCO material contains atomic hydrogen at a concentration within a range from about 1 at % (atomic percent) to about 30 at %, and exposing the hydrogen-doped TCO material to a thermal annealing process. In another embodiment, the method includes exposing the TCO material to a fluorine plasma while forming a fluorine-doped TCO material during the APP process, wherein the fluorine-doped TCO material contains atomic fluorine at a concentration within a range from about 1 at % to about 30 at %.

Abstract: There is provided a solar cell in which a lower electrode layer, a photoelectric conversion layer having a chalcopyrite structure that includes a Group Ib element, a Group IIIb element, and a Group VIb element, and an upper electrode layer are sequentially formed on top of a substrate, wherein the solar cell is provided with a silicate layer between the substrate and the lower electrode layer.

Abstract: The present invention provides methods of making photovoltaic devices incorporating improved pnictide semiconductor films. In particular, the principles of the present invention are used to improve the surface quality of pnictide films. Photovoltaic devices incorporating these films demonstrate improved electronic performance. As an overview, the present invention involves a methodology that metalizes the pnictide film, anneals the metalized film under conditions that tend to form an alloy between the pnictide film and the alloy, and then removes the excess metal and at least a portion of the alloy. In one mode of practice, the pnictide semiconductor is Zinc phosphide and the metal is Magnesium.

Abstract: A photovoltaic cell structure for manufacturing a photovoltaic device. The photovoltaic cell structure includes a substrate including a surface region. A first conductor layer overlies the surface region. The photovoltaic cell structure includes a lower cell structure. The lower cell structure includes a first P type absorber layer using a first semiconductor metal chalcogenide material and/or other semiconductor material overlying the first conductor layer. The first P type absorber material is characterized by a first bandgap ranging from about 0.5 eV to about 1.0 eV, a first optical absorption coefficient greater than about 104 cm?1. The lower cell structure includes a first N+ type window layer comprising at least a second metal chalcogenide material and/or other semiconductor material overlying the first P absorber layer. The photovoltaic cell structure includes an upper cell structure.

Abstract: A method for fabricating a thin film photovoltaic device is provided. The method includes providing a substrate comprising a surface region made of a thin-film photovoltaic absorber including copper, indium, gallium, selenium, and sulfur species. Additionally, the method includes applying a dip-in chemical bath deposition process for forming a buffer layer containing at least zinc-ogygen-sulfide material but substantially free of cadmium species. Furthermore, the method includes producing a chemical bath including steps of heating a bath of water to about 75° C., adding aqueous ammonia to mix with the bath of water, adding a solution of sodium hydroxide, adding zinc salt solution, and adding a solution of thiourea. The dip-in chemical bath deposition process includes immersing a plurality of substrates formed with the thin-film photovoltaic absorber substantially vertically in the chemical bath for 30 minutes to form the zinc-oxygen-sulfide buffer layer followed by a cleaning and drying process.

Abstract: This invention describes a semiconductor material of general formula (I) Me12Me21-xMe3xMe4(C11-yC2y)4, in which x stands for a numeric value from 0 to 1, and y stands for a numeric value of 0 to 1, as well as its use as an absorber material in a solar cell. The metal Mel is a metal which is selected from the metals in group 11 of the periodic table of the elements (Cu, Ag or Au). The metals Me2 and Me3 are selected from the elements of the 12th group of the periodic table of elements (Zn, Cd & Hg). The metal Me4 is a metal which is selected from the 4th main group of the periodic table of elements (C, Si, Ge, Sn and Pb). The non-metals C1 and C2 are selected from the group of chalcogenides (S, Se and Te).

Abstract: A photovoltaic device, such as a solar cell, having improved performance is provided. The photovoltaic device includes a copper-containing layer that contains an amount of impurities therein which is sufficient to hinder the diffusion of copper into an underlying semiconductor substrate. The copper-containing layer, which is located within a grid pattern formed on a front side surface of a semiconductor substrate, includes an electroplated copper-containing material having an impurity level of 200 ppm or greater located atop at least one metal diffusion barrier layer.

Abstract: A device of manufacturing a cascade thin film solar cell with improved productivity, and a thin film solar cell manufactured using the device have been disclosed. The thin film solar cell having a buffer layer formed by a method using the device has improved electrical characteristics.