Abstract: A Cu-In-Zn-Sn-(Se,S)-based thin film for a solar cell and a preparation method thereof, and more particularly, to a Cu-In-Zn-Sn-(Se,S)-based thin film for a solar cell which can reduce an amount of In to be used and exhibit an excellent conversion efficiency and a preparation method thereof.

Abstract: An ink for forming CIGS photovoltaic cell active layers is disclosed along with methods for making the ink, methods for making the active layers and a solar cell made with the active layer. The ink contains a mixture of nanoparticles of elements of groups IB, IIIA and (optionally) VIA. The particles are in a desired particle size range of between about 1 nm and about 500 nm in diameter, where a majority of the mass of the particles comprises particles ranging in size from no more than about 40% above or below an average particle size or, if the average particle size is less than about 5 nanometers, from no more than about 2 nanometers above or below the average particle size. The use of such ink avoids the need to expose the material to an H2Se gas during the construction of a photovoltaic cell and allows more uniform melting during film annealing, more uniform intermixing of nanoparticles, and allows higher quality absorber films to be formed.

Abstract: A flexible solar cell is assembled by forming a TiO2 patterned layer on a flexible substrate electrode. Quantum dots (QDs) are formed on the TiO2 patterned layer. A gasket is disposed between the flexible substrate electrode and a flexible counter electrode forming a sandwich. Electrolyte and sealant are injected between the substrate electrode and flexible counter electrode to form the flexible solar cell.

Abstract: A photovoltaic module which has at least two solar cells, and a method and system to manufacture such photovoltaic modules. The solar cells are disposed on a surface of an insulating carrier film and an isolation structure is formed between the solar cells to electrically isolate them. A conductor structure such as conductive fingers and busbars is formed on the module. The fingers are formed substantially on the top transparent conductive layer of the cells and the busbar is formed substantially over the insulation structure. The busbar electrically connects the top transparent conductive layer of one of the cells to the conductive base of the other cell.

Abstract: The present invention provides a solar cell sealing film having enhanced transparency. A composition for a solar cell sealing film contains an ethylene-polar monomer copolymer, a crosslinker and a compound having an alkyleneoxy group. Thereby a solar cell sealing film having excellent all light beam transmittance and enhanced transparency can be formed.

Abstract: Extremely high efficiency solar cells are described. Novel alternating bias schemes enhance the photovoltaic power extraction capability above the cell band-gap by enabling the extraction of hot carriers. In conventional solar cells, this alternating bias scheme has the potential of more than doubling their yielded net efficiency. In solar cells incorporating quantum wells (QWs) or quantum dots (QDs), the alternating bias scheme has the potential of extending such solar cell power extraction coverage, possibly across the entire solar spectrum, thus enabling unprecedented solar power extraction efficiency. Within such cells, a novel alternating bias scheme extends the cell energy conversion capability above the cell material band-gap while the quantum confinement structures are used to extend the cell energy conversion capability below the cell band-gap.

Abstract: Processes for making a solar cell by depositing various layers of components on a substrate and converting the components into a thin film photovoltaic absorber material. Processes of this disclosure can be used to control the stoichiometry of metal atoms in making a solar cell for targeting a particular concentration and providing a gradient of metal atom concentration. A selenium layer can be used in annealing a thin film photovoltaic absorber material.

Abstract: Disclosed is a cable for use in a concentrating photovoltaic module. The cable includes at least one strand wrapped with an optically pervious or reflective sheath. The pervious sheath is made of a material that exhibits a penetration rate of 90% and survives a temperature of at least 140 degrees Celsius. The reflective sheath is made of a material that exhibits a reflection rate of 95% and survives a temperature of at least 140 degrees Celsius. The cable is used to connect an anode of the concentrating photovoltaic module to a cathode of the same. The material of the reflective sheath may be isolating.

Abstract: A metal substrate with an insulating layer, which is capable of being produced by a simple process, exhibits heat resistance during semiconductor processing, is superior in voltage resistance, and has small leakage current, and an Al base material that realizes the metal substrate are provided. The metal substrate with an insulating layer is formed by administering anodic oxidation on at least one surface of the Al base material. The Al base material includes only precipitous particles of a substance which is anodized by anodic oxidation as precipitous particles within an Al matrix.

Abstract: Methods and devices are described for a photovoltaic device and substrate structure. In one embodiment, a photovoltaic device includes a substrate structure and a MS 1-xOx window layer formed over the substrate structure, wherein M is an element from the group consisting of Zn, Sn, and In. Another embodiment is directed to a process for manufacturing a photovoltaic device including forming a MS 1-xOx window layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process and vapor transport deposition process, wherein M is an element from the group consisting of Zn, Sn, and In.

Abstract: An apparatus for securing solar panels to a roof includes a photovoltaic cell and a mounting frame sized to receive the photovoltaic cell. The mounting frame is configured to be securely fastened directly to a roof of a structure and form a vapor barrier on the roof.

Abstract: A non-sintered structure. The non-sintered structure includes a first non-sintered nanocrystal layer, and a second non-sintered nanocrystal layer wherein the first layer and the second layer are configured to interact electronically.

Abstract: A solar cell includes a substrate, a first electrode located over the substrate, where the first electrode comprises a first transition metal layer, at least one p-type semiconductor absorber layer located over the first electrode, an n-type semiconductor layer located over the p-type semiconductor absorber layer, and a second electrode located over the n-type semiconductor layer. The first transition metal layer contains (i) an alkali element or an alkali compound and (ii) a lattice distortion element or a lattice distortion compound. The p-type semiconductor absorber layer includes a copper indium selenide (CIS) based alloy material.

Abstract: An intelligent thin film solar cell having temperature dependent infrared light transmittance capability, comprising: a transparent substrate, an upper electrode layer, a photovoltaic layer, a lower electrode layer, a temperature dependent optical layer, and an ultra-thin conductive layer. Said upper electrode layer is disposed on said transparent substrate, said photovoltaic layer is disposed on said upper electrode layer, and said lower electrode layer is disposed on said photovoltaic layer. Said temperature dependent optical layer is disposed between said photovoltaic layer and said lower electrode layer, and its transmittance to infrared light is dependent on variations of temperature. When temperature of said temperature dependent optical layer increases to a specific range, transmittance of said temperature dependent optical layer to said infrared light is reduced.

Abstract: Provided is a solar cell that includes: a substrate; a first electrode disposed on the substrate; a light absorbing layer disposed on the first electrode; a buffer layer disposed on the light absorbing layer; and a second electrode disposed on the buffer layer, wherein the buffer layer contains a compound represented by one of the following Formulas 1 and 2: (In1-xGax)2O3??Formula 1 (In1-xAlx)2O3??Formula 2 wherein x is 0<x<1.

Abstract: Laminated articles and layered articles, for example, low alkali glass and/or low sodium laminated articles and layered articles useful for, for example, photovoltaic devices are described.

Abstract: A hybrid photovoltaic device comprising a plurality of nanostructures embedded in a matrix of a photosensitive material including one or more layers. A combination of innovative structural aspects of the hybrid photovoltaic device results in significant improvements in collection of incident light from the solar spectrum, better absorption of light, and better collection of the photo-carriers generated in response to the incident light, thereby improving efficiency of the hybrid photovoltaic device.

Abstract: Volume compensation in photovoltaic device is provided. The photovoltaic device has an outer transparent casing and a substrate that, together, define an inner volume. At least one solar cell is on the substrate. A filler layer seals the at least one solar cell within the inner volume. A container within the inner volume has an opening in fluid communication with the filler layer. A diaphragm is affixed to the opening thereby sealing the interior of the container from the filler layer. The diaphragm is configured to decrease the volume within the container when the filler layer thermally expands and to increase the volume within the container when the filler layer thermally contracts. In some instances, the substrate is hollowed and the container is formed within this hollow. The container can have multiple openings, each sealed with a diaphragm. There can be multiple containers within the photovoltaic device.

Abstract: Disclosed is a mica paper composite and a process for making the mica paper composite. Particularly disclosed is a process for chemically planarizing the surface of a mica composite. Articles comprising the mica paper composite are also disclosed.

Abstract: A semiconductor device includes a semiconductor circuit on an insulated metal substrate, which includes an anodized film formed on at least one side of an Al substrate, wherein the Al substrate has a potential higher than an average potential of the semiconductor circuit when the semiconductor circuit is driven.

Abstract: A chalcopyrite semiconductor based photovoltaic solar cell. This cell comprises a metal substrate. A conductive layer is present between the metal substrate and a chalcopyrite semiconductor. The conductive layer has a crystal structure fitting to the crystal structure of the chalcopyrite semiconductor. Also disclosed is a coated metal substrate, in particular a metal strip for producing the individual metal substrates of a solar cell, as well as a manufacturing method thereof.

Abstract: The invention relates to a thin-film solar cell (10) comprising a substrate (1) of metal or glass, a dielectric barrier layer (2) based on a polysilazane and a photovoltaic layer structure (4) of the copper-indium sulphide (CIS) type or the copper-indium selenide (CIGSe) type.

Abstract: A photovoltaic device having (i) an outer transparent casing, (ii) a substrate, the substrate and the outer transparent casing defining an inner volume, (iii) at least one solar cell on the substrate, (iv) a filler layer sealing the at least one solar cell and (v) a container within the inner volume is provided. The container decreases in volume when the filler layer expands, and increases in volume when the filler layer contracts. In some instances, the container is sealed and has a plurality of ridges. In some instances, the container has an opening that is sealed by a spring loaded seal. In some instances, the container has a first opening and a second opening, where the first opening is sealed by a first spring loaded seal and the second opening is sealed by a second spring loaded seal. In some instances, the container has an elongated asteroid shape.

Abstract: Formulations and methods of making solar cells are disclosed. In general, the invention presents a solar cell contact made from a mixture wherein the mixture comprises a solids portion and an organics portion, wherein the solids portion comprises from about 85 to about 99 wt % of a metal component, and from about 1 to about 15 wt % of a lead-free glass component. Both front contacts and back contacts are disclosed.

Abstract: The thermal management and method for large scale processing of CIS and/or CIGS based thin film overlaying glass substrates. According to an embodiment, the present invention provides a method for fabricating a copper indium diselenide semiconductor film. The method includes providing a plurality of substrates, each of the substrates having a copper and indium composite structure. The method also includes transferring the plurality of substrates into a furnace, each of the plurality of substrates provided in a vertical orientation with respect to a direction of gravity, the plurality of substrates being defined by a number N, where N is greater than 5. The method further includes introducing a gaseous species including a selenide species and a carrier gas into the furnace and transferring thermal energy into the furnace to increase a temperature from a first temperature to a second temperature, the second temperature ranging from about 350° C. to about 450° C.

Abstract: The thermal management and method for large scale processing of CIS and/or CIGS based thin film overlaying glass substrates. According to an embodiment, the present invention provides a method for fabricating a copper indium diselenide semiconductor film. The method includes providing a plurality of substrates, each of the substrates having a copper and indium composite structure. The method also includes transferring the plurality of substrates into a furnace, each of the plurality of substrates provided in a vertical orientation with respect to a direction of gravity, the plurality of substrates being defined by a number N, where N is greater than 5. The method further includes introducing a gaseous species including a selenide species and a carrier gas into the furnace and transferring thermal energy into the furnace to increase a temperature from a first temperature to a second temperature, the second temperature ranging from about 350° C. to about 450° C.

Abstract: The thermal management and method for large scale processing of CIS and/or CIGS based thin film overlaying glass substrates. According to an embodiment, the present invention provides a method for fabricating a copper indium diselenide semiconductor film. The method includes providing a plurality of substrates, each of the substrates having a copper and indium composite structure. The method also includes transferring the plurality of substrates into a furnace, each of the plurality of substrates provided in a vertical orientation with respect to a direction of gravity, the plurality of substrates being defined by a number N, where N is greater than 5. The method further includes introducing a gaseous species including a selenide species and a carrier gas into the furnace and transferring thermal energy into the furnace to increase a temperature from a first temperature to a second temperature, the second temperature ranging from about 350° C. to about 450° C.

Abstract: This invention relates to a front electrode/contact for use in an electronic device such as a photovoltaic device. In certain example embodiments, the front electrode of a photovoltaic device or the like includes a multilayer coating including at least one transparent conductive oxide (TCO) layer (e.g., of or including a material such as tin oxide, ITO, zinc oxide, or the like) and/or at least one conductive substantially metallic IR reflecting layer (e.g., based on silver, gold, or the like). In certain example instances, the multilayer front electrode coating may include one or more conductive metal(s) oxide layer(s) and/or one or more conductive substantially metallic IR reflecting layer(s) in order to provide for reduced visible light reflection, increased conductivity, cheaper manufacturability, and/or increased infrared (IR) reflection capability.

Abstract: Methods and devices are provided for forming thin-films from solid group IIIA-based particles. In one embodiment of the present invention, a method is described comprising of providing a first material comprising an alloy of a) a group IIIA-based material and b) at least one other material. The material may be included in an amount sufficient so that no liquid phase of the alloy is present within the first material in a temperature range between room temperature and a deposition or pre-deposition temperature higher than room temperature, wherein the group IIIA-based material is otherwise liquid in that temperature range. The other material may be a group IA material. A precursor material may be formulated comprising a) particles of the first material and b) particles containing at least one element from the group consisting of: group IB, IIIA, VIA element, alloys containing any of the foregoing elements, or combinations thereof. The temperature range described above may be between about 20° C.

Abstract: A solar cell assembly comprising a plurality of elongated solar cells, each respective solar cell comprising (i) a core configured as a first electrode, (ii) a semiconductor junction circumferentially disposed on the core, (iii) a transparent conductive oxide (TCO) layer disposed on the semiconductor junction, and (iv) an elongated counter-electrode disposed lengthwise on a first side of the respective solar cell and extending outward from the TCO layer. On a second side of each cell, approximately opposite the counter-electrode, is a notch or other disruption extending through the semiconductor junction and the transparent oxide layer, thereby exposing the core of the solar cell. The solar cell assembly may further comprise conductive internal reflectors configured between a first and second elongated solar cell in the plurality of solar cells such that a portion of the solar light reflected from the respective internal reflector is reflected onto the solar cells.

Abstract: Optoelectronic devices having enhanced conversion efficiencies and associated methods are provided. In one aspect, for example, a method of making an optoelectronic device can include applying an absorption layer onto a support substrate, the absorption layer including a material such as CIGS, CIG, CI, CZT, CdTe, and combinations thereof. Additional steps include providing a element-rich environment in proximity to the absorption layer, and irradiating at least a portion of the absorption layer with laser radiation through the element-rich environment thereby incorporating the element into the absorption layer.

Abstract: An ink for forming CIGS photovoltaic cell active layers is disclosed along with methods for making the ink, methods for making the active layers and a solar cell made with the active layer. The ink contains a mixture of nanoparticles of elements of groups IB, IIIA and (optionally) VIA. The particles are in a desired particle size range of between about 1 nm and about 500 nm in diameter, where a majority of the mass of the particles comprises particles ranging in size from no more than about 40% above or below an average particle size or, if the average particle size is less than about 5 nanometers, from no more than about 2 nanometers above or below the average particle size. The use of such ink avoids the need to expose the material to an H2Se gas during the construction of a photovoltaic cell and allows more uniform melting during film annealing, more uniform intermixing of nanoparticles, and allows higher quality absorber films to be formed.

Abstract: A composition of matter, includes a plurality of anisotropic nanoparticles that are in physical contact with one another, each of the plurality of anisotropic nanoparticles having a) a first dimension that is substantially different than both a second dimension and a third dimension and b) a non-random nanoparticle crystallographic orientation that is substantially aligned with the first direction. The plurality a anisotropic nanoparticles are substantially aligned with respect to each other to define a substantially close packed dense layer having a non-random shared crystallographic orientation that is substantially aligned with a basal plane of the substantially close packed dense layer. The plurality of anisotropic nanoparticles includes a member selected from the group consisting of (In,Ga)y(S,Se)1-y, an In2Se3 stable wurtzite structure that defines a hexagonal rod nanoparticle, Cux(Se)1-x and Cu(In,Ga)y(S,Se)1-y.

Abstract: Photocatalytic materials based on coupling of semiconductor nanocrystalline quantum dots (NQD) and molecular catalysts. These materials have capability to drive or catalyze non-spontaneous chemical reactions in the presence of visible radiation, ultraviolet radiation, or both. The NQD functions in these materials as a light absorber and charge generator. Following light absorption, the NQD activates a molecular catalyst adsorbed on the surface of the NQD via transfer of one or more charges (either electrons or electron-holes) from the NQD to the molecular catalyst. The activated molecular catalyst can then drive a chemical reaction. A photoelectrolytic device that includes such photocatalytic materials is also described.

Abstract: A method for forming a thin film photovoltaic device. The method includes providing a transparent substrate including a surface region. A first electrode layer is formed overlying the surface region. A copper layer is formed overlying the first electrode layer and an indium layer overlying the copper layer to form a multi-layered structure. The method subjects at least the multi-layered structure to a thermal treatment process in an environment containing a sulfur bearing species and form a copper indium disulfide material. The copper indium disulfide material includes a thickness of substantially copper sulfide material. The thickness of the copper sulfide material is removed to expose a surface region having a copper poor surface characterized by a copper to indium atomic ratio of less than about 0.95:1. The method subjects the copper poor surface to a metal cation species to convert the copper poor surface from an n-type semiconductor characteristic to a p-type semiconductor characteristic.

Abstract: A photovoltaic device and related methods. The device has a structured material positioned between an electron collecting electrode and a hole collecting electrode. An electron transporting/hole blocking material is positioned between the electron collecting electrode and the structured material. In a specific embodiment, negatively charged carriers generated by optical absorption by the structured material are preferentially separated into the electron transporting/hole blocking material. In a specific embodiment, the structured material has an optical absorption coefficient of at least 103 cm?1 for light comprised of wavelengths within the range of about 400 nm to about 700 nm.

Abstract: A method for forming a thin film photovoltaic device. The method includes providing a transparent substrate comprising a surface region. A first electrode layer is formed overlying the surface region. A copper layer is formed overlying the first electrode layer and an indium layer is formed overlying the copper layer to form a multi-layered structure. The method subject at least the multi-layered structure to a thermal treatment process in an environment containing a sulfur bearing species to form a bulk copper indium disulfide material. The bulk copper indium disulfide material includes one or more portions of copper indium disulfide material characterized by a copper-to-indium atomic ratio of less than about 0.95:1 and a copper poor surface comprising a copper to indium atomic ratio of less than about 0.95:1.

Abstract: A method for forming a thin film photovoltaic device. The method includes providing a transparent substrate comprising a surface region. A first electrode layer is formed overlying the surface region. A copper layer is formed overlying the first electrode layer and an indium layer is formed overlying the copper layer to form a multi-layered structure. The method subjects at least the multi-layered structure to a thermal treatment process in an environment containing a sulfur bearing species to form a bulk copper indium disulfide material. The bulk copper indium disulfide material comprises one or more portions of copper indium disulfide material and a copper poor surface region characterized by a copper-to-indium atomic ratio of less than about 0.95:1.

Abstract: A method for forming a thin film photovoltaic device is provided. The method includes providing a transparent substrate comprising a surface region. A first electrode layer is formed overlying the surface region. A chalcopyrite material is formed overlying the first electrode layer. In a specific embodiment, the chalcopyrite material comprises a copper poor copper indium disulfide region. The copper poor copper indium disulfide region having an atomic ratio of Cu:In of about 0.95 and less. The method includes compensating the copper poor copper indium disulfide region using a sodium species to cause the chalcopyrite material to change from an n-type characteristic to a p-type characteristic. The method includes forming a window layer overlying the chalcopyrite material and forming a second electrode layer overlying the window layer.

Abstract: A method for forming a thin film photovoltaic device. The method includes providing a transparent substrate comprising a surface region, forming a first electrode layer overlying the surface region, forming a copper layer overlying the first electrode layer and forming an indium layer overlying the copper layer to form a multi-layered structure. The multi-layered structure is subjected to a thermal treatment process in an environment containing a sulfur bearing species to forming a copper indium disulfide material. The copper indium disulfide material comprising a copper-to-indium atomic ratio ranging from about 1.2:1 to about 2:1 and a thickness of substantially copper sulfide material having a copper sulfide surface region. The thickness of the copper sulfide material is selectively removed to expose a surface region having a copper poor surface comprising a copper to indium atomic ratio of less than about 0.95:1.

Abstract: The present invention provides strategies for providing photovoltaic devices that are more resistant to moisture and/or oxygen degradation and the accompanying migration of key elements such as Na, Li, and the lanthanoid series of elements from the absorber layer and that have enhanced service life and improved performance. These strategies are particularly useful in the fabrication of chalcogenide-based photovoltaic devices such as chalcogenide-based solar cells. These strategies incorporate a barrier region between the photovoltaic absorber region and the front side collection grid. The barrier region keeps moisture and/or oxygen from the absorber layer and contains key elements such as Na, Li, and Ln in the absorber layer. As a result, the absorber layer retains its performance capabilities for an extended period of time.

Abstract: Photovoltaic cells with interconnects to an external circuit, as well as related components, systems, and methods, are disclosed.

Abstract: A template of a thin-film solar cell includes a substrate and an anodized layer. The anodized layer is formed on the substrate, and includes plural pores, wherein alkali halide precursor is filled into the pores for controlling diffused alkaline content. A preparation for fabricating a template of a thin-film solar cell includes steps of: a) providing a substrate; b) anodizing a surface of the substrate to form an anodized layer with plural pores; and c) filling alkali halide precursor into the pores.

Abstract: A first electrode layer 14 is formed on a mica substrate 54, and then first scribe portions 64 are disposed. Next, a light absorbing layer 16 and a buffer layer 18 are disposed on the first electrode layer 14, and through holes (second scribe portions 66) which penetrate from the upper end face of the buffer layer 18 to the lower end face of the mica substrate 54 are formed in a spot-like manner. Then, a second electrode layer 20 is disposed on the buffer layer 18. At this time, the lower end face of the second electrode layer 20 reaches the first electrode layer 14 along the inner peripheral walls of the second scribe portions 66. Furthermore, the second electrode layer 20 is scribed to dispose third scribe portions 70.

Abstract: This invention relates to a front electrode/contact for use in an electronic device such as a photovoltaic device. In certain example embodiments, the front electrode of a photovoltaic device or the like includes a multilayer coating including at least one transparent conductive oxide (TCO) layer (e.g., of or including a material such as tin oxide, ITO, zinc oxide, or the like) and/or at least one conductive substantially metallic IR reflecting layer (e.g., based on silver, gold, or the like). In certain example instances, the multilayer front electrode coating may include one or more conductive metal(s) oxide layer(s) and one or more conductive substantially metallic IR reflecting layer(s) in order to provide for reduced visible light reflection, increased conductivity, cheaper manufacturability, and/or increased infrared (IR) reflection capability.

Abstract: Provided herein are multicomponent semiconductor films having a broad range of bandgaps and charge carrier characteristics. The semiconductor films include copper, zinc, tin, at least one substitutional metal and at least one chalcogen. Substitutional metals include those capable of substituting for a portion of copper, zinc, or both in the semiconductor films. Also disclosed are methods for making the films, including single-bath electrodeposition methods, and devices incorporating the films, including photovoltaic devices.

Abstract: The present invention provides compositions (small molecules, oligomers and polymers) that can be used to modify charge transport across a nanocrystal surface or within a nanocrystal-containing matrix, as well as methods for making and using the novel compositions.

Abstract: A thin-film solar cell in which a transparent electrode having fine surface irregularities with small surface roughness and substantially uniform in-plane resistance is realized can be obtained by forming a plurality of first transparent conductive films separated from one another in a substrate surface on a transparent insulative substrate, forming a second transparent conductive film on the first transparent conductive films, etching the second transparent conductive film in a granular shape and forming first granular members dispersed on the first transparent conductive films, forming a power generation layer on the first transparent conductive films and on the dispersed first granular members, forming a rear-side electrode layer on the power generation layer.

Abstract: Methods for assemblies of anisotropic nanoparticles which includes forming a substantially close packed dense layer by assembling a plurality of anisotropic nanoparticles, each of the plurality of anisotropic nanoparticles having a) a first dimension that is substantially different than both a second dimension and a third dimension and b) a non-random nanoparticle crystallographic orientation that is substantially aligned with the first direction, wherein assembling includes mechanically interacting the plurality of anisotropic nanoparticles by imposing a delocalized force that defines a direction that is substantially perpendicular to a basal plane of the substantially closed packed dense layer; and imposing a fluctuating force to which the anisotropic nanoparticles respond, which is sufficient to overcome a short range weak attractive force between members of the plurality of anisotropic nanoparticles with respect to anisotropic nanoparticles that are not substantially overlapping.

Abstract: A photoelectric conversion device includes a photoelectric conversion semiconductor layer for generating an electric current when it absorbs light, a first electrode formed in contact with a light-absorbing surface of the semiconductor layer, and a second electrode formed in contact with a rear surface of the semiconductor layer. The semiconductor layer is a single-particle film including a binder layer and separate photoelectric conversion semiconductor particles. At least parts of the photoelectric conversion semiconductor particles are embedded in the binder layer. The photoelectric conversion semiconductor particles have a mean particle diameter of not less than 1 ?m and not more than 60 ?m and a variation coefficient of particle diameter of less than 30%. Parts of the semiconductor particles are in contact with the second electrode at the rear surface and parts of the semiconductor particles are in contact with the first electrode at the front surface via a buffer layer.