Abstract: A method of manufacture of I-III-VI-absorber photovoltaic cells involves sequential deposition of films comprising one or more of silver and copper, with one or more of aluminum indium and gallium, and one or more of sulfur, selenium, and tellurium, as compounds in multiple thin sublayers to form a composite absorber layer. In an embodiment, the method is adapted to roll-to-roll processing of photovoltaic cells. In an embodiment, the method is adapted to preparation of a CIGS absorber layer having graded composition through the layer of substitutions such as tellurium near the base contact and silver near the heterojunction partner layer, or through gradations in indium and gallium content. In a particular embodiment, the graded composition is enriched in gallium at a base of the layer, and silver at the top of the layer. In an embodiment, each sublayer is deposited by co-evaporation of copper, indium, gallium, and selenium, which react in-situ to form CIGS.

Abstract: Low-temperature sulfurization/selenization heat treatment processes for photovoltaic devices are provided. In one aspect, a method for fabricating a photovoltaic device is provided. The method includes the following steps. A substrate is provided that is either (i) formed from an electrically conductive material or (ii) coated with at least one layer of a conductive material. A chalcogenide absorber layer is formed on the substrate. A buffer layer is formed on the absorber layer. A transparent front contact is formed on the buffer layer. The device is contacted with a chalcogen-containing vapor having a sulfur and/or selenium compound under conditions sufficient to improve device performance by filling chalcogen vacancies within the absorber layer or the buffer layer or by passivating one or more of grain boundaries in the absorber layer, an interface between the absorber layer and the buffer layer and an interface between the absorber layer and the substrate.

Abstract: This disclosure features an article that includes first and second electrodes, a photoactive layer between the first and second electrodes, and a hole carrier layer between the first electrode and the photoactive layer. The hole carrier layer includes a Cu(I)-containing material. The article is configured as a photovoltaic cell.

Abstract: Provided is a method of fabricating an electronic device. The method according to the present inventive concept may include forming a lower electrode having a flat portion and protrusions on a substrate, forming an intermediate layer on the lower electrode, and forming an upper electrode on the intermediate layer. The forming of the lower electrode may include forming a conductive film by depositing a first metal on the substrate, and depositing a second metal on the conductive film to prepare an alloy of the first metal and the second metal.

Abstract: Provided is a single junction type CIGS thin film solar cell, which includes a CIGS light absorption layer manufactured using a single junction. The single junction type CIGS thin film solar cell includes a substrate, a back contact deposited on the substrate, a light absorption layer deposited on the back contact and including a P type CIGS layer and an N type CIGS layer coupled to the P type CIGS layer using a single junction, and a reflection prevention film deposited on the light absorption layer.

Abstract: A method for fabricating a thin film photovoltaic device is provided. The method includes providing a substrate comprising a thin film photovoltaic absorber which has a surface including copper, indium, gallium, selenium, and sulfur. The method further includes subjecting the surface to a material containing at least a zinc species substantially free of any cadmium. The surface is heated to cause formation of a zinc doped material. The zinc doped material is free from cadmium. Furthermore the method includes forming a zinc oxide material overlying the zinc doped material and forming a transparent conductive material overlying the zinc oxide material.

Abstract: A photovoltaic device is presented. The device includes a first semiconductor layer disposed on a second semiconductor layer. The first semiconductor layer includes a compound having a metal species, sulfur, and oxygen. The metal species may include zinc, magnesium, tin, indium, or a combination thereof. Method for making a photovoltaic device is also presented.

Abstract: A preparation method of a CIS-based or CIGS-based thin film for a light absorption layer of a solar cell, which uses a paste prepared by mixing precursors of Cu, In, Se, and optional Ga in a solvent, minimizes the raw material loss, does not produce a toxic gas during the process, and is suitable for producing a large scale film at a low production cost.

Abstract: A method of manufacturing improved thin-film solar cells entirely by sputtering includes a high efficiency back contact/reflecting multi-layer containing at least one barrier layer consisting of a transition metal nitride. A copper indium gallium diselenide (Cu(InXGa1-X)Se2) absorber layer (X ranging from 1 to approximately 0.7) is co-sputtered from specially prepared electrically conductive targets using dual cylindrical rotary magnetron technology. The band gap of the absorber layer can be graded by varying the gallium content, and by replacing the gallium partially or totally with aluminum. Alternately the absorber layer is reactively sputtered from metal alloy targets in the presence of hydrogen selenide gas. RF sputtering is used to deposit a non-cadmium containing window layer of ZnS. The top transparent electrode is reactively sputtered aluminum doped ZnO. A unique modular vacuum roll-to-roll sputtering machine is described.

Abstract: A p-type transparent conductive oxide and a solar cell containing the p-type transparent conducting oxide, wherein the p-type transparent conductive oxide includes a molybdenum trioxide doped with an element having less than six valence electrons, the element is selected from the group consisting of alkali metals, alkaline earth metals, group III elements, group IV, group V, transition elements and their combinations. Doping an element having less than six valence electron results in hole number increase, and thus increasing the hole drift velocity, and making Fermi level closer to the range of p-type materials. Hence, a p-type transparent conductive material is generated. This p-type transparent conducting oxide not only has high electron hole drift velocity, low resistivity, but also reaches a transmittance of 88% in the visible wavelength range, and therefore it is very suitable to be used in solar cells.

Abstract: A photoelectric conversion element contains a transparent conductive film, a p-type amorphous silicon film, an i-type amorphous silicon film, an n-type single-crystal silicon substrate, an i-type amorphous silicon film, a p-type amorphous silicon film, a transparent conductive film, and a metallic film; and the film thickness of the transparent conductive film is greater than or equal to that of the transparent conductive film.

Abstract: Photovoltaic devices and techniques for enhancing efficiency thereof are provided. In one aspect, a photovoltaic device is provided. The photovoltaic device comprises a photocell having a first photoactive layer and a second photoactive layer adjacent to the first photoactive layer so as to form a heterojunction between the first photoactive layer and the second photoactive layer; and a plurality of high-aspect-ratio nanostructures on one or more surfaces of the second photoactive layer. The plurality of high-aspect-ratio nanostructures are configured to act as a scattering media for incident light. The plurality of high-aspect-ratio nanostructures can also be configured to create an optical resonance effect in the incident light.

Abstract: A tandem solar cell includes: a substrate; a front electrode disposed on the substrate; a back electrode disposed opposite to the front electrode on the substrate; a first cell disposed below the front electrode and including a first buffer layer and a first light absorption layer; and a second cell disposed above the back electrode and including a second light absorption layer and a second buffer layer. The first light absorption layer includes a CuGaSeS layer and a CuGaSe layer, and the second light absorption layer includes a semiconductor compound selected from the group consisting of CuInSe2, CuInGaSe2, CuInSeS, CuInGaSeS and any combinations thereof. The CuGaSeS layer of the first light absorption layer is disposed closer than the CuGaSe layer of the first light absorption layer to the front electrode.

Abstract: Methods and materials used to manufacture a series of substantially identical solar cells which then can be assembled into arrays of various designs, as required, to achieve the desired electrical output. The invention is described with reference to producing dye solar cells.

Abstract: In an integrated structure of a CIS based thin film solar cell obtained by stacking an light absorbing layer, a high-resistance buffer layer, and a window layer in that order, a first buffer layer adjoining the light absorbing layer is made of a compound containing cadmium (Cd), zinc (Zn), or indium (In), a second buffer layer adjoining the first buffer layer is made of a zinc oxide-based thin film, a third buffer layer is formed to cover the end face exposed by forming an interconnect pattern in the light absorbing layer, the first buffer layer, and the second buffer layer and the top end surface of the second buffer layer, and the third buffer layer is made of a zinc oxide-based thin film.

Abstract: In a method for forming a light absorber layer (4) of a thin film solar cell, the absorber layer is formed from a plurality of sub-layers each of which is formed by preparing a plurality of mixtures containing Cu, Se, In and Ga in a liquid medium, a composition ratio of In to Ga being progressively increased from one mixture to another, the mixtures optionally including a mixture containing no In or Ga; applying a layer of one of the mixtures onto a back electrode layer (3) formed on a substrate (2); drying the applied layer of the mixture; and rapidly baking the dried layer of the mixture. By forming the absorber layer with a plurality of thin absorber sub-layers each having a controlled band gap, a solar cell having a large surface area can be fabricated at low cost and the efficiency of the solar cell can be improved by forming a favorable band gap gradient structure.

Abstract: A photovoltaic element (110) for converting electromagnetic radiation into electrical energy is provided, which has a tandem cell structure.

Abstract: A tandem photovoltaic cell device is disclosed including an upper and lower cell. The lower cell may comprise a glass substrate and overlying layers that may include an electrode, absorber, window layer, and a transparent conductive oxide layer. The upper cell may comprise an intermediate glass substrate and overlying layers that may include a transparent conductor, an absorber, a window layer, a second conductive oxide layer, and an upper glass material. The cells may be coupled with an optical coupling material, and edge sealing material may be disposed between the glass substrates for both the upper and lower cells.

Abstract: A method of manufacturing (AgxCu1-x)2ZnSn(SySe1-y)4 thin films, the method comprising: providing a thin film comprising Ag and/or Cu, the thin film further comprising Zn; and annealing the thin film in an atmosphere comprising S and/or Se, and further comprising Sn.

Abstract: The present invention relates to a method for fabricating a thin layer made of a alloy and having photovoltaic properties. The method according to the invention comprises first steps of: a) depositing an adaptation layer (MO) on a substrate (SUB), b) depositing at least one layer (SEED) comprising at least elements I and/or III, on said adaptation layer. The adaptation layer is deposited under near vacuum conditions and step b) comprises a first operation of depositing a first layer of I and/or III elements, under same conditions as the deposition of the adaptation layer, without exposing to air the adaptation layer.

Abstract: A method for manufacturing polycarbonate solar cells. The method is designed to adapt many techniques used in the compact disc manufacturing industry to the manufacture of polycarbonate solar cells. The method comprises: creating a polycarbonate substrate for a solar cell; depositing a low resistivity cathodic contact layer on the polycarbonate substrate; depositing a photonic energy absorbing layer with a sputter chamber comprising a quaternary CIGS sputter target; using a modulated high intensity pulsed xenon flashlamp; depositing a buffer layer; depositing a highly resistive transmissive intrinsic layer; depositing a transmissive contact oxide window layer; adding anodic contacts to one of the layers; depositing an anti-reflective coating layer; and encapsulating the solar cell to provide environmental protection.

Abstract: A photovoltaic device includes a light absorbing layer as a p-type semiconductor, a buffer layer, and a window layer. The light absorbing layer, the buffer layer, and the window layer are provided in this order. A film of a sulfide-based compound semiconductor containing Cu, Zn, Sn, and S is used as the light absorbing layer. In addition, the buffer layer includes a material having a composition of Zn1-xMgxO (0<x?0.4), and including a phase having a hexagonal crystal structure as a main component.

Abstract: A photovoltaic cell can include a heterojunction between semiconductor layers. The first semiconductor layer can include a III-V compound semiconductor, the first semiconductor layer positioned over a transparent conductive layer. A second semiconductor layer can include a II-VI compound semiconductor, the second semiconductor layer positioned between the first semiconductor layer and a back metal contact.

Abstract: A photovoltaic cell is fabricated onto a polyimide film using an unbalanced RF magnetron sputtering process. The sputtering process includes the addition of 0.05% to 0.5% oxygen to an inert gas stream. Portions of the photovoltaic cell are exposed to an elevated temperature CdCl2 treatment which is at or below the glass transition temperature of the polyimide film.

Abstract: Nanorod and nanowire compositions are disclosed comprising copper indium selenide, copper indium gallium selenide, copper indium sulfide, or a combination thereof. Also disclosed are photovoltaic devices comprising the nanorod and/or nanowire compositions. Also disclosed are methods for producing the nanorod and nanowire compositions, and photovoltaic devices described herein.

Abstract: A method of production of a CIS-based thin film solar cell comprises the steps of forming an alkali control layer on a high strain point glass substrate, forming a back surface electrode layer on the alkali control layer, forming a CIS-based light absorption layer on the back surface electrode layer, and forming an n-type transparent conductive film on the CIS-based light absorption layer, wherein the alkali control layer is formed to a thickness which allows heat diffusion of the alkali metal which is contained in the high strain point glass substrate to the CIS-based light absorption layer and, furthermore, the CIS-based light absorption layer has an alkali metal added to it from the outside in addition to heat diffusion from the high strain point glass substrate.

Abstract: The invention relates to an electrolyte composition, comprising a polyether polymer, a polyethylene oxide, and a redox pair and optionally nano-particles.

Abstract: A method of, and apparatus for, increasing the power output of the cell using one or more intrinsic oxide buffer layers to reduce extraneous optical absorption. The intrinsic oxide buffer layers can be, for example: (i) an undoped oxide film that is prepared without intentional doping, (ii) a compensated oxide layer that is prepared using compensating dopants to reduce the conductivity of the oxide film, which can be either undoped or doped, and/or (iii) a passivated oxide layer that is prepared using hydrogen or other atoms to improve the electronic properties of low conductivity oxide films.

Abstract: A package structure and a solar cell with the same are provided. The package structure includes a transparent package bulk and at least one structure capable of changing a direction of light. The structure is disposed within the transparent package bulk and at a distance from a surface of the transparent package bulk. When applied to a solar cell, the package structure can reduce gridline shading.

Abstract: Methods of forming copper indium gallium diselenide (CIGS) layers for photovoltaic devices are disclosed. In one aspect, a solution based selenization method in the formation of CIGS is provided. In some embodiments a substrate containing elemental copper (Cu), indium (In) and gallium (Ga) is coated with a solution comprising a source of selenium (Se) dissolved in a solvent. After coating with the selenium based solution, the substrate is heated to form the CIGS layer. Coating of the substrate with the selenium based solution may be carried out by dip coating, slit casting, gap coating, ink-jet type coating, among other techniques. The solution based selenization method disclosed herein provides high material utilization and low cost, unlike vacuum based processes.

Abstract: An illustrative solar cell may include an electron conductor, an absorber, a hole conductor, and one or more other layers that help reduce interfacial charge recombination within the solar cell for improved solar cell efficiency. In one example, an electron inhibiting/hole transporting layer is provided that blocks or at least substantially inhibits movement of electrons that may otherwise move from within the absorber and/or electron conductor into the hole conductor of the solar cell, while permitting holes to travel from the absorber to the hole conductor. In some cases, the electron inhibiting/hole transporting layer may be transparent or substantially transparent to incident light so that the incident light may reach the absorber material.

Abstract: A non-aqueous electrolyte battery includes a battery element, a film-form casing member, and a resin protective layer. The battery element includes a positive electrode, a negative electrode, and a separator disposed between the positive electrode and the negative electrode. The film-form casing member contains the battery element and an electrolyte in an enclosed space thereof. The resin protective layer is formed along the surface of the film-form casing member and has a substantially uniform thickness.

Abstract: Two-dimensional chemical maps of a layered nanostructure are reconstructed from selected spectroscopy line scans in a scanning electron microscope. Embodiments include fast two-dimensional scanning a layered nanostructure to form a structure image having multiple layers, slow-rate spectroscopy scanning the nanostructure along selected scanning lines to form chemical profiles, warping the structure image into a warped structure image by flattening each of the layers in the structure image, aligning chemical profiles to the warped structure image, forming warped chemical maps, and inversely transforming the warped chemical maps into two-dimensional chemical maps.

Abstract: Methods and devices are provided for forming thin-films from solid group IIIA-based particles. In one embodiment of the present invention, a method is described comprising of providing a first material comprising an alloy of a) a group IIIA-based material and b) at least one other material. The material may be included in an amount sufficient so that no liquid phase of the alloy is present within the first material in a temperature range between room temperature and a deposition or pre-deposition temperature higher than room temperature, wherein the group IIIA-based material is otherwise liquid in that temperature range. The other material may be a group IA material. A precursor material may be formulated comprising a) particles of the first material and b) particles containing at least one element from the group consisting of: group IB, IIIA, VIA element, alloys containing any of the foregoing elements, or combinations thereof.

Abstract: The present invention provides a semiconductor film which adapts to the solar cell in both of band gap and electric resistivity or carrier concentration. In the present invention, a semiconductor film is composed of a semiconductor including group 11 elements, group 12 elements, group 13 elements and group 16 element of the ratio indicated as a composition formula (1) in below, AxByCzDw??(1) wherein A, B, C and D indicate said group 11 elements, said group 12 elements, said group 13 elements and said group 16 elements, respectively, x, y, z and w are respectively numbers indicating a composition ratio, and x and z satisfy a relationship of x/z>1.

Abstract: It is an object of the present invention to provide a photoelectric conversion device and a photoelectric conversion module with enhanced conversion efficiency. The photoelectric conversion device comprises: a light-absorbing layer containing a compound semiconductor capable of photoelectric conversion; and a semiconductor layer provided on one side of the light-absorbing layer and containing sulfur, wherein more sulfur is present in part of the semiconductor layer on the aforementioned light-absorbing layer side than in part thereof on the opposite side from the aforementioned light-absorbing layer.

Abstract: Solar cells are provided. The solar cell may include a substrate, a first electrode, a light absorption layer, a second electrode. Additionally, an intrinsic layer and a buffer layer may further be disposed between the light absorption layer and the second electrode. Here, the first and second electrodes may consist of carbon nanotubes of which polarities may be controlled. Thus, a flexible solar cell of low costs and high efficiency may be realized.

Abstract: The present invention relates to a silicon multilayer anti-reflective film with a gradually varying refractive index and a manufacturing method therefor, and a solar cell having the same and a manufacturing method therefor, wherein: the refractive index of a silicon thin film is adjusted by depositing silicon on a semiconductor or glass substrate with a slight tilt; and an anti-reflective film with a gradually varying refractive index is implemented using a silicon multi-layer film in which multi-layer film are stacked with different tilt angles. In addition, the silicon multilayer anti-reflective film according to the present invention is applied to a silicon solar cell, thereby suppressing reflection in the inside of the solar cell and providing an excellent heat radiation characteristic using a high heat transfer coefficient.

Abstract: A dye-sensitized photoelectric converter with enhanced light absorptance and photoelectric conversion efficiency is provided. The dye-sensitized photoelectric converter includes a transparent substrate (e.g., glass), a (negative) electrode composed of a transparent conductive layer such as FTO (fluorine-doped tin(IV) oxide SnO2), a semiconductor layer holding multiple types of photosensitizing dyes, an electrolyte layer, a counter (positive) electrode, a counter substrate, and a sealing medium (not illustrated). In some embodiments, the multiple types of photosensitizing dyes have minimum excitation energies that are different from one another. In some embodiments, the multiple types of dyes have steric configurations that are different relative to one another.

Abstract: Precursor layers and methods of forming Group IBIIIAVIA solar cell absorbers with bandgap grading using such precursor layers are described. The Group IBIIIAVIA absorber includes a top surface with a Ga/(Ga+In) molar ratio in the range of 0.1-0.3. The Group IBIIIAVIA solar cell absorber is formed by reacting the layers of a multilayer material structure which includes a metallic film including Cu, In and Ga formed on a base, a layer of Se formed on the metallic film, and a second metallic layer substantially including Ga formed on the layer of Se.

Abstract: Methods for fabrication of copper delafossite materials include a low temperature sol-gel process for synthesizing CuBO2 powders, and a pulsed laser deposition (PLD) process for forming thin films of CuBO2, using targets made of the CuBO2 powders. The CuBO2 thin films are optically transparent p-type semiconductor oxide thin films. Devices with CuBO2 thin films include p-type transparent thin film transistors (TTFT) comprising thin film CuBO2 as a channel layer and thin film solar cells with CuBO2 p-layers. Solid state dye sensitized solar cells (SS-DSSC) comprising CuBO2 in various forms, including “core-shell” and “nano-couple” particles, and methods of manufacture, are also described.

Abstract: Disclosed is a novel thin film photovoltaic device and a process of making. The device comprises an interface layer between the absorber layer and the electrode resulting in an improved back contact and improved device efficiency. The interface layer comprises a material comprising a Ma-(Group VIA)b compound, where M is a transition metal the Group VIA designates Te, Se and/or S.

Abstract: A method of fabricating a flexible photovoltaic film cell with an iron diffusion barrier layer. The method includes: providing a foil substrate including iron; forming an iron diffusion barrier layer on the foil substrate, where the iron diffusion barrier layer prevents the iron from diffusing; forming an electrode layer on the iron diffusion barrier layer; and forming at least one light absorber layer on the electrode layer. A flexible photovoltaic film cell is also provided, which cell includes: a foil substrate including iron; an iron diffusion barrier layer formed on the foil substrate to prevent the iron from diffusing; an electrode layer formed on the iron diffusion barrier layer; and at least one light absorber layer formed on the electrode layer.

Abstract: A method and apparatus provide for a roughened back surface of a semiconductor absorber layer of a photovoltaic device to improve adhesion. The roughened back surface may be achieved through an etching process.

Abstract: Methods for forming Cu—In—Ga—N (CIGN) layers for use in TFPV solar panels are described using reactive PVD deposition in a nitrogen containing atmosphere. In some embodiments, the CIGN layers can be used as an absorber layer and eliminate the need of a selenization step. In some embodiments, the CIGN layers can be used as a protective layer to decrease the sensitivity of the CIG layer to oxygen or moisture before the selenization step. In some embodiments, the CIGN layers can be used as an adhesion layer to improve the adhesion between the back contact layer and the absorber layer.

Abstract: A structuring device is for structuring a plate-like element.

Abstract: A solar cell includes a photoactive, semiconductive absorber layer configured to generate excess charge carriers of opposed polarity by light incident on a front of the absorber layer during operation. The absorber layer is configured to separate and move, via at least one electric field formed in the absorber layer, the photogenerated excess charge carriers of opposed polarity over a minimal effective diffusion length Leff,min. The absorber layer has a thickness Lx of 0<Lx?Leff,min. First contact elements are configured to remove the excess charge carriers of a first polarity on a rear of the absorber layer. Second contact elements are configured remove the excess charge carriers of a second polarity on the rear of the absorber layer. At least one undoped, electrically insulating second passivation region is disposed in an alternating, neighboring arrangement with a first passivation region on the rear of the absorber layer.

Abstract: A solar cell includes a substrate, a protective layer located over a first surface of the substrate, a first electrode located over a second surface of the substrate, at least one p-type semiconductor absorber layer located over the first electrode, an n-type semiconductor layer located over the p-type semiconductor absorber layer, and a second electrode over the n-type semiconductor layer. The p-type semiconductor absorber layer includes a copper indium selenide (CIS) based alloy material, and the second electrode is transparent and electrically conductive. The protective layer has an emissivity greater than 0.25 at a wavelength of 2 ?m, has a reactivity with a selenium-containing gas lower than that of the substrate, and may differ from the first electrode in at least one of composition, thickness, density, emissivity, conductivity or stress state. The emissivity profile of the protective layer may be uniform or non-uniform.

Abstract: An electrode structure is provided for use in an electronic device. In certain example embodiments, an electrode structure includes a supporting glass substrate (e.g., soda-lime silica based float glass), a buffer layer (e.g., SixNy), and a conductive electrode (e.g., Mo) provided in this order. The buffer layer is advantageous in that it prevents or reduces sodium (Na) migration from the glass substrate into semiconductor layer(s) of the electronic device.

Abstract: In particular embodiments, a method is described for depositing thin films, such as those used in forming a photovoltaic cell or device. In a particular embodiment, the method includes providing a substrate suitable for use in a photovoltaic device and plasma spraying one or more layers over the substrate, the grain size of the grains in each of the one or more layers being at least approximately two times greater than the thickness of the respective layer.