Abstract: A method for forming a photovoltaic device includes forming an absorber layer with a granular structure on a conductive layer; conformally depositing an insulating protection layer over the absorber layer to fill in between grains of the absorber layer; and planarizing the protection layer and the absorber layer. A buffer layer is formed on the absorber layer, and a top transparent conductor layer is deposited over the buffer layer.

Abstract: A main object of the present invention is to provide a CZTS-based compound semiconductor whose band gap is different from that of a conventional CZTS-based compound semiconductor and a photoelectric conversion device prepared with the CZTS-based compound semiconductor. The present invention is a CZTS-based compound semiconductor in which a ratio of the number of moles of Cu to the total number of moles of Cu, Zn and Sn is larger than a ratio of the number of moles of Cu to the total number of moles of Cu, Zn and Sn configuring Cu2ZnSnS4, and a photoelectric conversion device prepared with the CZTS-based compound semiconductor.

Abstract: A photovoltaic device, such as a solar cell, having improved performance is provided. In one embodiment, the photovoltaic device includes a multimetal semiconductor alloy layer located on exposed portions of a front side surface of a semiconductor substrate. The multimetal semiconductor alloy layer includes at least a first elemental metal that forms an alloy with a semiconductor material, and a second elemental metal that differs from the first elemental metal and that does not form an alloy with a semiconductor material at the same temperature as the first elemental metal. The photovoltaic device further includes a copper-containing layer located atop the multimetal semiconductor alloy layer.

Abstract: Disclosed are a nanostructure array substrate, a method for fabricating the same, and a dye-sensitized solar cell by using the same. The nanostructure array substrate includes a plurality of metal oxide nanostructures vertically aligned on the substrate while being separated from each other. The metal oxide nanostructures include nanorods having a ZnO core/TiO2 shell structure or TiO2 nanotubes. The method includes the steps of forming ZnO nanorods vertically aligned from a seed layer formed on a substrate; and coating a TiO2 sol on the ZnO nanorods and sintering the ZnO nanorods to form nanorods having a ZnO core/TiO2 shell structure. The transparency and flexibility of the substrate are ensured. The photoelectric conversion efficiency of the solar cell is improved if the nanostructure array substrate is employed in the photo electrode of the dye-sensitized solar cell.

Abstract: In one embodiment, a method of manufacturing a solar cell includes forming a first electrode over a substrate; forming a light-converting layer over the first electrode and patterning the light-converting layer to form a plurality of patterned light-converting layers that are spaced apart from each other; forming a transparent insulating layer over the first electrode including the patterned light-converting layers; and forming a second electrode over the transparent insulating layer.

Abstract: The present invention discloses the use of a metal nanoparticle which comprises at least one semiconductor attached to it, wherein the at least one semiconductor is an atomic quantum cluster (AQC) consisting of between 2 and 55 zero-valent transition metal atoms, as photocatalysts in photocatalytic processes and applications thereof.

Abstract: A method of making a coated substrate having a transparent conductive oxide layer with a dopant selectively distributed in the layer includes selectively supplying an oxide precursor material and a dopant precursor material to each coating cell of a multi-cell chemical vapor deposition coater, wherein the amount of dopant material supplied is selected to vary the dopant content versus coating depth in the resultant coating.

Abstract: Disclosed are a solar cell and preparing method of the same. The solar cell includes a back electrode layer on a support substrate, a molybdenum oxide layer on the back electrode layer, a light absorbing layer on the molybdenum oxide layer, and a front electrode layer on the light absorbing layer.

Abstract: Photovoltaic (PV) devices and solution-based methods of making the same are described. The PV devices include a CIGS-type absorber layer formed on a molybdenum substrate. The molybdenum substrate includes a layer of low-density molybdenum proximate to the absorber layer. The presence of low-density molybdenum proximate to the absorber layer has been found to promote the growth of large grains of CIGS-type semiconductor material in the absorber layer.

Abstract: A photoelectric conversion element of the present invention includes: a first electrode being linear; a second electrode; and an electrolyte. The first electrode and the second electrode are disposed via the electrolyte. The first electrode includes a first linear material which includes a copper wire and a metal coating which coats the copper wire and a dye-carrying porous oxide semiconductor layer disposed on an outer circumference of the first linear material.

Abstract: Photovoltaic devices with a zinc oxide layer replacing all or part of at least one of a window layer and a buffer layer, and methods of making the devices.

Abstract: A photovoltaic device is provided which includes a plurality of junction layers. Each junction layer includes a plurality of photovoltaic cells electrically connected to one another. At least one of the junction layers is at least in part optically transmissive. The junction layers are arranged in a stack on top of each other.

Abstract: A photoelectric conversion element includes a PN junction formed from an N-type oxide layer and a P-type oxide layer. The P-type oxide layer is formed from an oxide having a perovskite structure.

Abstract: An integrated photovoltaic cell and battery device, a method of manufacturing the same and a photovoltaic power system incorporating the integrated photovoltaic cell and battery device. The integrated photovoltaic cell and battery device includes a photovoltaic cell, a battery, and interconnects providing three-dimensional integration of the photovoltaic cell and the battery into an integrated device for capturing and storing solar energy. Also provided is a design structure readable by a machine to simulate, design, or manufacture the above integrated photovoltaic cell and battery device.

Abstract: A process for the preparation of a thin film having at least one layer of a predetermined thickness not exceeding 5 microns is provided such that the integrity of the thin film is preserved. The process for the preparation of such a thin film comprises the step of rolling at least one sheet. The step of rolling is preceded by a step of stacking at least one sheet on a substrate having a predetermined thickness. The process of stacking preferably includes the step of bonding at least one sheet to a substrate. The sheet is a metal, alloy or a combination thereof, the metal and the alloy being of metals selected from the groups IB, IIB, IIIA, IVA, IVB, VB and VIB.

Abstract: An improved efficiency thin film solar cell is disclosed. Nanoscale indentations or protrusions are formed on the cross sectional surface of a carrier layer, onto which a thin metal film is deposited. Additional layers, including semiconductor absorber and collector layers and a window layer, are disposed on the metal film, thereby completing the solar cell. The nanostructure underlying the metal film serves to reduce the work function of the metal and thereby assists in the absorption of holes created by solar photons. This leads to more efficient electricity generation in the solar cell. In a further embodiment of the present invention the cross sectional surface of the semiconductor absorber layer is also modified by nanoscale indentations or protrusions. These indentations or protrusions have the effect of altering the size of the semiconductor band gap, thereby optimizing the radiation absorption properties of the solar cell.

Abstract: A method of manufacturing an order vacancy compound (OVC) is provided. The method includes the following steps. A trivalent ion, a hexavalent ion and one of a univalent ion and a bivalent ion for an electrodeposition process are provided to form a solar energy absorbing film. The OVC is formed by performing an electrochemical etching process on the solar energy absorbing film.

Abstract: A back contact configuration for a CIGS-type photovoltaic device is provided. The back contact configuration includes an interfacial seed layer, made up of one or more layers/sublayers, disposed between a Mo based rear contact/electrode and a CIGS inclusive semiconductor absorber. The interfacial seed layer may be of or include one or more element(s) that make up, or help make up, the CIGS inclusive semiconductor absorber. Various methods and compositions of the interfacial seed layer are disclosed, including a seed layer comprising metallic and/or substantially metallic Cu—In—Ga, CIGS, and/or a stack of alternating layers of or including Cu, In and Ga. Methods for making the back contact configuration, including an interfacial seed layer, are also provided.

Abstract: CIGS absorber layers fabricated using coated semiconducting nanoparticles and/or quantum dots are disclosed. Core nanoparticles and/or quantum dots containing one or more elements from group 13 and/or IIIA and/or VIA may be coated with one or more layers containing elements group IB, IIIA or VIA. Using nanoparticles with a defined surface area, a layer thickness could be tuned to give the proper stoichiometric ratio, and/or crystal phase, and/or size, and/or shape. The coated nanoparticles could then be placed in a dispersant for use as an ink, paste, or paint. By appropriate coating of the core nanoparticles, the resulting coated nanoparticles can have the desired elements intermixed within the size scale of the nanoparticle, while the phase can be controlled by tuning the stoichiometry, and the stoichiometry of the coated nanoparticle may be tuned by controlling the thickness of the coating(s).

Abstract: A photoelectric converter is disclosed. The photoelectric converter includes a light-absorbing layer. The light-absorbing layer includes a plurality of crystalline grains. The grains contain a Group I-III-VI chalcopyrite compound semiconductor. The light-absorbing layer contains oxygen and an average atomic concentration of oxygen at grain boundaries of the light-absorbing layer is larger than the average atomic concentration of oxygen in the grains of the light-absorbing layer.

Abstract: A solar cell includes a p-n junction formed by joining a p-type semiconductor and an n-type semiconductor. The p-type semiconductor is a chalcopyrite compound semiconductor with a band gap of 1.5 eV or more within which an intermediate level exists with a half bandwidth of 0.05 eV or more. The intermediate level is different from an impurity level. The chalcopyrite compound semiconductor includes a first element having first electronegativity of 1.9 or more in Pauling units, the first element occupying a lattice site of the semiconductor. A portion of the first element is substituted with a second element having second electronegativity different from the first electronegativity, the second element being a congeneric element of the first element. The intermediate level is created by substituting the first element with the second element.

Abstract: Techniques for improving energy conversion efficiency in photovoltaic devices are provided. In one aspect, an antimony (Sb)-doped film represented by the formula, Cu1-yIn1-xGaxSbzSe2-wSw, provided, wherein: 0?x?1, and ranges therebetween; 0?y?0.2, and ranges therebetween; 0.001?z?0.02, and ranges therebetween; and 0?w?2, and ranges therebetween. A photovoltaic device incorporating the Sb-doped CIGS film and a method for fabrication thereof are also provided.

Abstract: The present invention provides a wet or dry bio-sensitized photoelectric conversion device (photodetector or photovoltaic) comprising: a stabilized biologically-derived sensitizer, such as a stablilized photosystem I (PS-I), deposited on nanowires, semiconductor material, electrodes and a support. The nanowires provide a greater surface area of the light absorption layer for better energy conversion efficiency and are chosen such as to complement the absorption spectrum of the sensitizer and protect the sensitizer from photobleaching.

Abstract: A method for producing a nanoparticle for forming a CZTS compound semiconductor thin film is provided which includes the step of reacting a solution including a metal salt or a metal complex with a solution including a chalcogenide salt to produce a CZTS compound nanoparticle. A CZTS compound semiconductor thin film is formed by coating or printing the nanoparticle for forming the CZTS compound semiconductor thin film, and subjecting it to a heat treatment. A solar cell including the CZTS compound semiconductor thin film as the light-absorbing layer is provided.

Abstract: Disclosed are a solar cell apparatus and a method for manufacturing the same. The solar cell apparatus includes a substrate; a back electrode layer on the substrate; a light absorbing layer on the back electrode layer; and a front electrode layer on the light absorbing layer, wherein an outer peripheral side of the back electrode layer is aligned on a plane different from a plane of an outer peripheral side of the light absorbing layer.

Abstract: A method, in certain embodiments, includes providing a metal alloy, annealing the metal alloy, and contacting the metal alloy with vapors of selenium, or sulfur, or a combination thereof. The metal alloy having a uniform first bulk composition and a first surface composition on annealing provides an annealed metal alloy having a non uniform second bulk composition and a second surface composition which on being contacted vapors of selenium, or sulfur, or a combination thereof, produces a selenized or a sulfurized metal alloy. Further the metal alloy may have a layer formed in situ from a low melting point metal within the alloy via diffusion rather than sequential deposition and co-evaporation.

Abstract: Quantum dot-sensitized solar cell and manufacturing method thereof are provided. The proposed quantum dot-sensitized solar cell has a counter electrode with a PbS thin-film layer and a polysulfide electrolyte contacting the PbS thin-film layer.

Abstract: The disclosure relates to apparatus and methods of photovoltaic or solar module design and fabrication. A photovoltaic (PV) module includes one or more photovoltaic cells mounted to a support, a first terminal connected to at least one of the one or more PV cells, a second terminal connected to at least one of the one or more PV cells, and a bypass line mounted to the support for bypassing the one or more PV cells. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Abstract: A structure for a single junction solar cell. The structure includes a substrate member having a surface region. The structure includes a first electrode structure overlying the surface region of the substrate member. A P absorber layer is formed overlying the first electrode structure. In a specific embodiment, the P absorber layer has a P? type impurity characteristics and a first optical absorption coefficient greater than 104 cm?1 in a wavelength range comprising 400 nm to 800 nm. An N+ layer is provided overlying the P absorber layer and an interface region formed within a vicinity of the P layer and the N+ layer. The structure also includes a high resistivity buffer layer overlying the N+ layer and a second electrode structure overlying the buffer layer.

Abstract: An article, such as a photovoltaic device, and methods for making such articles, are provided. For example, one embodiment is an article comprising a plurality of layers comprising an absorber layer and a window stack. The window stack comprises antimony.

Abstract: Methods for improving the efficiency of solar cells are disclosed. A solar cell consistent with the present disclosure includes a back contact metal layer disposed on a substrate. The solar cell also includes an electron reflector material(s) layer formed on the back contact metal layer and an absorber material(s) layer disposed on the electron reflector material(s) layer. In addition, the solar cell includes a buffer material(s) layer formed on the absorber material(s) layer wherein the electron reflector material(s) layer, absorber material(s) layer, and buffer material(s) layer form a pn junction within the solar cell. Furthermore, a TCO material(s) layer is formed on the buffer material(s) layer. In addition, the front contact layer is formed on the TCO material(s) layer.

Abstract: Active or functional additives are embedded into surfaces of host materials for use as components in a variety of electronic or optoelectronic devices, including solar devices, smart windows, displays, and so forth. Resulting surface-embedded device components provide improved performance, as well as cost benefits arising from their compositions and manufacturing processes.

Abstract: New photovoltaic device configurations utilize combinations of n-copper indium selenide (n-CIS) absorber and p-type semiconducting organic/polymeric or inorganic materials to maximize the efficiency of solar energy conversion into electric power. Fabrication methods to produce various device configurations, based on n-CIS thin films, nanoparticles, organic or polymeric materials deposited on flexible or rigid substrates are described, that simplify process steps and hence the costs for high volume solar cell manufacturing.

Abstract: A photoelectrode, photovoltaic device and photoelectrochemical cell and methods of making are disclosed. The photoelectrode includes an electrode at least partially formed of FeO combined with at least one of lithium, hydrogen, sodium, magnesium, manganese, zinc, and nickel. The electrode may be doped with at least one of lithium, hydrogen, and sodium. The electrode may be alloyed with at least one of magnesium, manganese, zinc, and nickel.

Abstract: A method of fabrication of thin films for photovoltaic or electronic applications is provided. The method includes fabricating a nanocrystal precursor layer and selenizing the nanocrystal precursor layer in a selenium containing atmosphere. The nanocrystal precursor layer includes one of CuInS2, CuIn(Sy,Se1-y)2, CuGaS2, CuGa(Sy, Se1-y)2, Cu(InxGa1-x)S2, and Cu(InxGa1-x)(Sy, Se1-y)2 nanoparticles and combinations thereof, wherein 0?x?1 and 0?y?1.

Abstract: A solution for forming at least a portion of an active layer of an electronic or electro-optic device includes a solvent, an additive mixed with the solvent to provide a solvent-additive blend, and a solute that includes at least one of a transition metal, an alkali metal, an alkaline earth metal, Al, Ga, In, Ge, Sn, or Sb dissolved in elemental form in the solvent-additive blend. The additive is selected from the group of additives consisting of NR1R2NHCOOH, NH2N—HCONHNH2, NH2COOH.NH3, NH2NHC(?NH)NH2.H2CO3, NH2NHCSNHNH2, NH2NHCSSH and all combinations thereof. R1 and R2 are each independently selected from hydrogen, aryl, methyl, ethyl and a linear, branched or cyclic alkyl of 3-6 carbon atoms. Methods of producing the solution, a method of producing a Kesterite film on a substructure and devices made with the solutions and methods are also provided.

Abstract: Volume compensation in photovoltaic device is provided. The photovoltaic device has an outer transparent casing and a substrate that, together, define an inner volume. At least one solar cell is on the substrate. A filler layer seals the at least one solar cell within the inner volume. A container within the inner volume has an opening in fluid communication with the filler layer. A diaphragm is affixed to the opening thereby sealing the interior of the container from the filler layer. The diaphragm is configured to decrease the volume within the container when the filler layer thermally expands and to increase the volume within the container when the filler layer thermally contracts. In some instances, the substrate is hollowed and the container is formed within this hollow. The container can have multiple openings, each sealed with a diaphragm. There can be multiple containers within the photovoltaic device.

Abstract: A method of making a sputtering target includes providing a backing structure, and forming a copper indium gallium sputtering target material on the backing structure by spray forming.

Abstract: This invention aims to provide a laminated structure and an integrated structure of a high production efficiency for a CIS based thin-film solar cell, which can produce a high-resistance buffer layer of the CIS based thin-film solar cell efficiently on a series of production lines and which needs no treatment of wastes or the like, and a manufacturing method for the structures. The CIS based thin-film solar cell includes a back electrode, a p-type CIS based light absorbing layer, a high-resistance buffer layer and an n-type transparent conductive film laminated in this order. The high-resistance buffer layer and the n-type transparent conductive film are formed of thin films of a zinc oxide group. The buffer layer contacts the p-type CIS based light absorbing layer directly, and has a resistivity of 500?·cm or higher.

Abstract: Embodiments relate to a solar cell apparatus including a molybdenum (Mo) contact layer and an annealed absorber layer including zinc and sulfur directly adjacent to the Mo contact layer. The apparatus has no molybdenum disulfide (MoS2) layer located between the Mo contact layer and the annealed absorber layer. The apparatus further includes a buffer layer adjacent to the annealed absorber layer.

Abstract: Disclosed are methods and apparatus for masking of substrates for deposition, and subsequent lifting of the mask with deposited material. Masking materials are utilized that can be used in high temperatures and vacuum environment. The masking material has minimal outgassing once inside a vacuum chamber and withstand the temperatures during deposition process. The mask is inkjeted over the wafers and, after deposition, removed using agitation, such as ultrasonic agitation, or using laser burn off.

Abstract: The present application relates to a copper oxide nanocrystal with a cupric oxide (CuO) shell surrounding a cuprous oxide (Cu2O) core. The copper oxide core/shell nanocrystals may be used as photo-absorbers in photovoltaic cells. The copper oxide core/shell nanocrystals form a p-type semiconductor layer that coats and fills the interstitial gaps of the n-type semiconductor mesoporous structure in a photovoltaic cell. The n-type semiconductor layer may include, for example, titanium dioxide (TiO2) particles.

Abstract: The present invention provides an improved redox couple for electrochemical and optoelectronic devices. The redox couple is based on a complex of a first row transition metal, said complex containing at least one mono-, bi-, or tridentate ligand comprising a substituted or unsubstituted ring or ring system comprising a five-membered N-containing heteroring and/or a six-membered ring comprising at least two heteroatoms, at least one of which being a nitrogen atom, said five- or six-membered heteroring, respectively, comprising at least one double bond. The invention also relates to electrolytes and to the devices containing the complex, and to the use of the complex as a redox couple. The invention further provides electrochemical and/or optoelectronic devices comprising a first and a second electrode and, between said first and second electrode, a charge transport layer, said a charge transport layer comprising tetracyanoborate ([B(CN)4]?) and a cationic metal complex functioning as redox-couple.

Abstract: A thin film solar cell is disclosed comprising the following layers deposited on a substrate: a microcrystalline p- or n-layer, an intermediate microcrystalline silicon i-layer applied by a hot-wire chemical-vapor deposition (HWCVD) method on the microcrystalline p- or n-layer a), an additional i-layer of microcrystalline silicon, which is formed by depositing on the intermediate microcrystalline silicon i-layer, by a plasma enhanced chemical vapor deposition (PECVD), a sputtering process, or a photo-CVD method whereby layers b) and c) together form an i-layer, and if a p-layer is present as the layer of step a), an n-layer, and if an n-layer is present as the layer of step a), a p-layer that is either microcrystalline or amorphous.

Abstract: Solar cell structures formed using molecular beam epitaxy (MBE) that can achieve improved power efficiencies in relation to prior art thin film solar cell structures are provided. A reverse p-n junction solar cell device and methods for forming the reverse p-n junction solar cell device using MBE are described. A variety of n-p junction and reverse p-n junction solar cell devices and related methods of manufacturing are provided. N-intrinsic-p junction and reverse p-intrinsic-n junction solar cell devices are also described.

Abstract: A photoelectric conversion element of an embodiment includes: a light absorbing layer containing Cu, at least one Group IIIb element selected from the group including Al, In and Ga, and S or Se, and having a chalcopyrite structure; and a buffer layer formed from Zn and O or S, in which the ratio S/(S+O) in the area extending in the buffer layer up to 10 nm from the interface between the light absorbing layer and the buffer layer, is equal to or greater than 0.7 and equal to or less than 1.0.

Abstract: A solar cell which can increase its open-circuit voltage, short-circuit current, and fill factor (F.F.), thereby enhancing its conversion efficiency is provided. The solar cell of the present invention comprises a p-type semiconductor layer and an n-type semiconductor layer, formed on the p-type semiconductor layer, containing a compound expressed by the following chemical formula (1): ZnO1-x-ySxSey??(1) where x?0, y>0, and 0.2<x+y<0.65.

Abstract: A quantum dot thin film solar cell is provided, which at least includes a first electrode layer, an optical active layer, and a second electrode layer sequentially deposited on a substrate. A plurality of quantum dots is formed in the optical active layer. Since the plurality of quantum dots and the optical active layer are formed through co-sputtering, an interface adhesion between the plurality of quantum dots and the optical active layer is good in this quantum dot thin film solar cell.

Abstract: A dye-sensitized solar cell including an inorganic dye containing all of Pb, Hg and S as a photo-sensitive dye and a manufacturing method of the same are provided.

Abstract: A composition includes a chemical reaction product defining a first surface and a second surface, characterized in that the chemical reaction product includes a segregated phase domain structure including a plurality of domain structures, wherein at least one of the plurality of domain structures includes at least one domain that extends from a first surface of the chemical reaction product to a second surface of the chemical reaction product. The segregated phase domain structure includes a segregated phase domain array. The plurality of domain structures includes i) a copper rich. indium/gallium deficient Cu(In,Ga)Se2 domain and ii) a copper deficient, indium/gallium rich Cu(In,Ga)Se2 domain.