Abstract: A plasma processing apparatus including an electrostatic chuck supporting a wafer; a focus ring disposed to surround an outer circumferential surface of the wafer; an insulation ring disposed to surround an outer circumferential surface of the focus ring; and an edge ring supporting lower portions of the focus ring and the insulation ring, the edge ring being spaced apart from the electrostatic chuck and surrounding an outer circumferential surface of the electrostatic chuck; wherein the edge ring includes a flow channel containing a fluid therein.

Abstract: The present invention concerns a device (10) for the surface treatment of a substrate (1) by dielectric barrier discharge that enables the generation of a cold filamentary plasma at atmospheric pressure, comprising a reaction chamber, in which are positioned means for supporting and/or moving the substrate (2) and at least two electrodes (3, 4) arranged in parallel on either side of the means for supporting and/or moving the substrate (2), of which one electrode (3) is intended to be brought to high voltage and a counter-electrode (4) to be earthed. It is characterised in that the counter-electrode (4) has a width (lce) and a length (Lce) that are respectively smaller than the width (le) and the length (Le) of the electrode (3), and in that the counter-electrode (4) is positioned so that it is enclosed in an orthogonal projection (5) of the electrode (3) on a plane containing the counter-electrode (4).

Abstract: A plasma processing system includes a process chamber and a plasma source that generates a plasma in a plasma cavity. The plasma cavity is substantially symmetric about a toroidal axis. The plasma source defines a plurality of outlet apertures on a first axial side of the plasma cavity Plasma products produced by the plasma pass in the axial direction, through the plurality of outlet apertures, from the plasma cavity toward the process chamber. A method of plasma processing includes generating a plasma within a substantially toroidal plasma cavity that defines a toroidal axis, to form plasma products, and distributing the plasma products to a process chamber through a plurality of outlet openings substantially azimuthally distributed about a first axial side of the plasma cavity, directly into a process chamber.

Abstract: An Electrostatic Chuck (ESC) in a chamber of a semiconductor manufacturing apparatus is presented for eliminating cooling-gas light-up. One wafer support includes a baseplate connected to a radiofrequency power source, a dielectric block, gas supply channels for cooling the wafer bottom, and first and second electrodes. The dielectric block is situated above the baseplate and supports the wafer when present. The first electrode is embedded in the top half of the dielectric block, where the top surface of the first electrode is substantially parallel to a top surface of the dielectric block, and the first electrode is connected to a DC power source. Further, the second electrode is embedded in a bottom half of the dielectric block, the second electrode being electrically connected to the first electrode, where the bottom surface of the second electrode is substantially parallel to a top surface of the baseplate.

Abstract: There is provided an apparatus for cyclical plasma etching of a substrate, the apparatus comprising: a process chamber; a support within the process chamber for receiving the substrate to be etched; a controller for repeatedly applying a dosing step and a bombardment steps respectively; a dosing controller for controlling the flow of a process gas in the dosing step such that the substrate is exposed to a maximum dose of process gas in use of 1000 Langmuirs and said dose is controllable within an accuracy of 1 Langmuir; and a first signal generator coupled to the process chamber and a second signal generator coupled to the support within the process chamber, the first and second signal generators being configured such that in use positions ions of an plasma active species within the process chamber have a substrate bombardment energy in the range of 10 eV to 100 eV which is controllable within an accuracy of 5 eV. There is also provided a method for cyclical plasma etching of a substrate using said apparatus.

Abstract: In the plasma etching method, a sample is placed on a stage in a chamber. A first gas is introduced into the chamber. Electric field is supplied within the chamber to plasma is generated from the first gas. A first RF power of a first frequency, which is for generating a bias voltage in the sample for etching the sample with radicals which are generated in the plasma while the plasma is generated, is supplied to the stage. A second gas is introduced from a position in outer periphery of a surface of the stage, on which the sample is placed. A second RF power of a second frequency higher than the first frequency and capable of generating plasma from the second gas above the stage that allows radicals generated in the plasma generated from the second gas to be supplied in the outer periphery, is supplied to the stage.

Abstract: A method for modeling cable loss is described. The method includes receiving a measurement of reverse power and forward power at a radio frequency (RF) generator. The method further includes computing theoretical power delivered to a matching network as a difference between the forward power and the reverse power and calculating a ratio of the reverse power to the forward power to generate an RF power reflection ratio. The method further includes identifying a cable power attenuation fraction based on a frequency of the RF generator and calculating a cable power loss as a function of the RF power reflection ratio, the cable power attenuation fraction, and the theoretical power. The method includes calculating actual power to be delivered to the impedance matching network based on the theoretical power and the cable power loss and sending the calculated actual power to the RF generator to generate an RF signal.

Abstract: Provided are apparatuses and methods for performing deposition and etch processes in an integrated tool. An apparatus may include a plasma processing chamber that is a capacitively-coupled plasma reactor, and the plasma processing chamber can include a showerhead that includes a top electrode and a pedestal that includes a bottom electrode. The apparatus may be configured with an RF hardware configuration so that an RF generator may power the top electrode in a deposition mode and power the bottom electrode in an etch mode. In some implementations, the apparatus can include one or more switches so that at least an HFRF generator is electrically connected to the showerhead in a deposition mode, and the HFRF generator and an LFRF generator is electrically connected to the pedestal and the showerhead is grounded in the etch mode.

Abstract: Disclosed is an apparatus and method of processing substrate, wherein the apparatus comprises a process chamber; a substrate supporter for supporting at least one of substrates, wherein the substrate supporter is provided in the process chamber, and is rotated at a predetermined direction; a chamber lid confronting with the substrate supporter, the chamber lid for covering the process chamber; and a gas distributor having a plurality of gas distribution modules for distributing gas to the substrate, wherein the plurality of gas distribution modules are connected to the chamber lid, wherein each of the gas distribution modules includes a power source electrode and a ground electrode confronting each other, a plasma discharge space is formed between the power source electrode and the ground electrode, and the plasma discharge space is not overlapped with a thin film formation region of the substrate supported by the substrate supporter.

Abstract: A plasma processing method is provided for a plasma processing apparatus which includes a plurality of upstream-side expansion valves and a plurality of downstream-side expansion valves connected to respective refrigerant inlets and respective refrigerant outlets to adjust a flow rate or a pressure of a refrigerant flowing into the respective refrigerant inlets and a flow rate or a pressure of a refrigerant flowing out from the respective refrigerant outlets. The method includes adjusting openings of the upstream-side expansion valves and openings of the downstream-side expansion valves so that no change in flow rate of the refrigerant occurs in a plurality of refrigerant channels between the plurality of upstream-side expansion valves and the plurality of downstream-side expansion valves via the plurality of refrigerant channels in a refrigeration cycle allowing the refrigerant to flow therein.

Abstract: A processing apparatus includes a substrate supporting unit that supports a substrate in a processing space in which the substrate is processed, a first partitioning member that includes a ceiling portion having an opening and partitions the processing space from an outer space, and a second partitioning member that is attached to the first partitioning member so as to close the opening and partition the processing space from the outer space together with the first partitioning member. The second partitioning member is attached to the first partitioning member so that the second partitioning member is removable from the first partitioning member by moving the second partitioning member toward a space which a lower surface of the ceiling portion faces.

Abstract: A tunable plasma etch process includes generating a plasma in a controlled flow of a source gas including NH3 and NF3 to form a stream of plasma products, controlling a flow of un-activated NH3 that is added to the stream of plasma products to form an etch gas stream; and controlling pressure of the etch gas stream by adjusting at least one of the controlled flow of the source gas and the flow of un-activated NH3 until the pressure is within a tolerance of a desired pressure. An etch rate of at least one of polysilicon and silicon dioxide by the etch gas stream is adjustable by varying a ratio of the controlled flow of the source gas to the flow of un-activated NH3.

Abstract: A method for manufacturing a planarized reflective layer disposed on a hinge layer connected to a hinge support post (210) is disclosed. The method comprises depositing a first layer of a first material to form the hinge layer (206), patterning a first mask over the first layer and selectively removing the first material not covered by any of the first mask to form a plurality of recesses, depositing a second layer of a second material over the first layer, patterning a second mask over the second layer and selectively removing the second material not covered by any of the second mask to form a hinge component (212), depositing a reflective layer (202) of a reflective material over the second layer and planarizing the reflective layer (202) to form a substantially planar reflective surface.

Abstract: Plasma processing systems and methods for using pre-dissociated and/or pre-ionized tuning gases are disclosed herein. In one embodiment, a plasma processing system includes a reaction chamber, a support element in the reaction chamber, and one or more cathode discharge assemblies in the reaction chamber. The reaction chamber is configured to produce a plasma in an interior volume of the chamber. The support element positions a microelectronic workpiece in the reaction chamber, and the cathode discharge assembly supplies an at least partially dissociated and/or ionized tuning gas to the workpiece in the chamber.

Abstract: An activated gas injector includes a flow passage defining member partitioned into a gas activation passage and a gas introduction passage by a partition wall; a gas introduction port through which a process gas is introduced into the gas introduction passage; a pair of electrodes to be supplied with electrical power to activate the process gas, wherein the electrodes extend along the partition wall in the gas activation passage; through-holes formed in the partition wall and arranged along a longitudinal direction of the electrodes, wherein the through-holes allow the process gas to flow from the gas introduction passage to the gas activation passage; and gas ejection holes provided in the gas activation passage along the longitudinal direction of the electrodes, wherein the gas ejection holes allow the process gas activated in the gas activation passage to be ejected therefrom.

Abstract: An electrical ground (36) of an RF impedance matching network (33) is connected to a connection area (50) on the grounded chamber cover (18) of a plasma chamber. The connection area is offset away from the center of the chamber cover toward a workpiece passageway (20). Alternatively, an RF power supply (30) has an electrically grounded output (32) that is connected to a connection area (52) on the chamber cover having such offset. Alternatively, an RF transmission line (37) has an electrically grounded conductor (39) that is connected between a grounded output of an RF power supply and a connection area (52) on the chamber cover having such offset.

Abstract: The object of the invention is to provide a plasma processing apparatus having enhanced plasma processing uniformity. The plasma processing apparatus comprises a processing chamber 1, means 13 and 14 for supplying processing gas into the processing chamber, evacuation means 25 and 26 for decompressing the processing chamber 1, an electrode 4 on which an object 2 to be processed such as a wafer is placed, and an electromagnetic radiation power supply 5A, wherein at least two kinds of processing gases having different composition ratios of O2 or N2 are introduced into the processing chamber through different gas inlets so as to control the in-plane uniformity of the critical dimension while maintaining the in-plane uniformity of the process depth.

Abstract: A method of treating particles by disaggregating, deagglomerating, exfoliating, cleaning, functionalising, doping, decorating and/or repairing said particles, in which the particles are subjected to plasma treatment in a treatment chamber containing a plurality of electrodes which project therein and wherein plasma is generated by said electrodes which are moved during the plasma treatment to agitate the particles.

Abstract: A method of etching a substrate by plasma via a mask having a predetermined pattern at back of a silicon layer of the substrate, a semiconductor device being formed at front of which supported by a support substrate, includes a main etching step in which plasma is generated by supplying a process gas including a mixed gas whose flow ratio of fluorine compound gas, oxygen gas and silicon fluoride gas is 2:1:1.5 or a process gas including a mixed gas in which at least the ratio of one of the oxygen gas and the silicon fluoride gas, using the fluorine compound gas as a standard, is larger than the above ratio, and the substrate is etched by the plasma; and an over etching step in which the substrate is further etched by plasma while applying a high frequency for bias whose frequency is less than or equal to 400 kHz.

Abstract: A plasma processing apparatus includes a processing chamber; a lower electrode provided in the processing chamber and having a base made of a conductive metal to which a high frequency power is applied, the lower electrode also serving as a mounting table for mounting thereon a target substrate; an upper electrode provided in the processing chamber to face the lower electrode; and a focus ring disposed above the lower electrode to surround the target substrate. An electrical connection mechanism is provided between the base of the lower electrode and the focus ring to electrically connect the base of the lower electrode to the focus ring through a current control element, and generates a DC current in accordance with a potential difference.

Abstract: For coupling RF power from an RF input of a plasma chamber to the interior of a plasma chamber, an RF bus conductor is connected between the RF input and a plasma chamber electrode. In one embodiment, an RF return bus conductor is connected to an electrically grounded wall of the chamber, and the RF bus conductor and the RF return bus conductor have respective surfaces that are parallel and face each other. In another embodiment, the RF bus conductor has a transverse cross section having a longest dimension oriented perpendicular to the surface of the plasma chamber electrode that is closest to the RF bus conductor.

Abstract: A method for providing steerability in a plasma processing environment during substrate processing is provided. The method includes managing, power distribution by controlling power being delivered into the plasma processing environment through an array of electrical elements. The method also includes directing gas flow during substrate processing by controlling the amount of gas flowing through an array of gas injectors into the plasma processing environment, wherein individual ones of the array of gas injectors are interspersed between the array of electrical elements. The method further includes controlling gas exhausting during substrate processing by managing amount of gas exhaust being removed by an array of pumps, wherein the array of electrical elements, the array of gas injectors, and the array of pumps are arranged to create a plurality of plasma regions, each plasma region being substantially similar, thereby creating a uniform plasma region across the substrate.

Abstract: A plasma processing apparatus includes an upper electrode that is installed within a processing chamber so as to face a lower electrode, supplies a gas through a plurality of gas supply holes provided in a facing surface and is vertically movable; a cover body installed above the upper electrode so as to airtightly seal a top opening of the processing chamber; a multiple number of gas exhaust holes provided in the facing surface; a ring-shaped member that is arranged along a circumference of the upper electrode, is vertically movable along with the upper electrode, and forms, at a lowered position, a processing space surrounded by the lower electrode, the upper electrode and the ring-shaped member; a multiplicity of gas supply holes opened in an inner wall of the ring-shaped member; and a plurality of gas exhaust holes opened in an inner wall of the ring-shaped member.

Abstract: A plasma reactor having a reactor chamber and an electrostatic chuck having a surface for holding a workpiece inside the chamber includes inner and outer zone backside gas pressure sources coupled to the electrostatic chuck for applying a thermally conductive gas under respective pressures to respective inner and outer zones of a workpiece-surface interface formed whenever a workpiece is held on the surface, and inner and outer evaporators inside respective inner and outer zones of the electrostatic chuck and a refrigeration loop having respective inner and cuter expansion valves for controlling flow of coolant through the inner and outer evaporators respectively. The reactor further includes inner and outer zone temperature sensors in inner and outer zones of the electrostatic chuck and a thermal model capable of simulating heat transfer through the inner and outer zones, respectively, between the evaporator and the surface based upon measurements from the inner and outer temperature sensors, respectively.

Abstract: A plasma treatment installation including at least two stationary workpiece holders adapted for controlled rotation about their respective axis and having supporting plates for supporting workpieces for the treatment thereof, at least one hood to be set on a workpiece holder that is adapted to enclose each of a plurality of workpiece holders to form a sealed treatment space, and a manipulator for automatically equipping the supporting plates of a workpiece holder with workpieces, while the other workpiece holder is covered by the hood to perform the plasma treatment of the workpieces.

Abstract: A gas distribution device for a substrate treating apparatus includes a plurality of plasma source electrodes having a first side surface; a plurality of plasma ground electrodes having a second side surface facing the first side surface, the plurality of plasma ground electrodes being alternately arranged with the plurality of plasma source electrodes; and a first gas providing part disposed at each plasma source electrode and including a first space, a plurality of first through-holes in communication with the first space for providing a first process gas between one of the plurality of plasma source electrodes and a corresponding ones of the plurality of plasma ground electrodes, and a first discharging portion at the first side surface.

Abstract: An intensity distribution of an electric field of a high frequency power used for generating plasma is controlled by using an electrode made of a homogeneous material and a moving body. There is provided a plasma processing apparatus for introducing a processing gas into an evacuable processing chamber 100 and generating plasma by a high frequency power and performing a plasma process on a wafer W by the plasma. The plasma processing apparatus includes a dielectric base 105a having a multiple number of fine holes A; a varying member 200 as the moving body provided with a multiple number of rod-shaped members B capable of being inserted into and separated from the fine holes A; and a driving mechanism 215 configured to drive the varying member 200 to allow the rod-shaped members B to be inserted into and separated from the fine holes A.

Abstract: Device for treating substrates, comprising a changer having controlled pressure and temperature, a substrate support which is provided in the chamber, the chamber comprising a gas inlet for carrying out a vapor phase deposition, and an upper wall of the chamber provided with a plurality of first channels connected to a first inlet and a plurality of second channels connected to a second inlet, the first and second channels opening into the chamber and being regularly distributed in the upper wall, a heating element provided above the upper wall and a gas discharge ring provided between the upper wall and the substrate support, the upper wall begin electrically conductive and insulated relative to the substrate support so as to be able to apply a voltage between the upper wall and the substrate support.

Abstract: A method of cleaning a substrate processing apparatus including a gas supply part configured to eject a process gas via gas passages formed in the gas supply part, and divided into first and second regions corresponding to first and second in-plane positions of a substrate, respectively, includes cleaning a first one of the gas passages corresponding to the first region with the plasma of the process gas by causing a first flow rate of the process gas supplied to the first region to be lower than a second flow rate of the process gas supplied to the second region and cleaning a second one of the gas passages corresponding to the second region with the plasma by causing a third flow rate of the process gas supplied to the first region to be higher than a fourth flow rate of the process gas supplied to the second region.

Abstract: A plasma processing system having a plasma processing chamber configured for processing a substrate is provided. The plasma processing system includes at least an upper electrode and a lower electrode for processing the substrate. The substrate is disposed on the lower electrode during plasma processing, where the upper electrode and the substrate forms a first gap. The plasma processing system also includes an upper electrode peripheral extension (UE-PE). The UE-PE is mechanically coupled to a periphery of the upper electrode, where the UE-PE is configured to be non-coplanar with the upper electrode. The plasma processing system further includes a cover ring. The cover ring is configured to concentrically surround the lower electrode, where the UE-PE and the cover ring forms a second gap.

Abstract: An apparatus generating a plasma for removing fluorinated polymer from a substrate is provided. The apparatus includes a powered electrode assembly, which includes a powered electrode, a first dielectric layer, and a first wire mesh disposed between the powered electrode and the first dielectric layer. The apparatus also includes a grounded electrode assembly disposed opposite the powered electrode assembly so as to form a cavity wherein the plasma is generated. The first wire mesh is shielded from the plasma by the first dielectric layer when the plasma is present in the cavity, which has an outlet at one end for providing the plasma to remove the fluorinated polymer.

Abstract: The method of performing physical vapor deposition on a workpiece includes performing at least one of the following: (a) increasing ion density over a workpiece center while decreasing ion density over a workpiece edge by decreasing impedance to ground at a target source power frequency fs through a bias multi-frequency impedance controller relative to the impedance to ground at the source power frequency fs through the side wall; or (b) decreasing ion density over the workpiece center while increasing ion density over the workpiece edge by increasing the impedance to ground at fs through the bias multi-frequency impedance controller relative to the impedance to ground at fs through the side wall.

Abstract: A non-axisymmetric electromagnet coil used in plasma processing in which at least one electromagnet coil is not symmetric with the central axis of the plasma processing chamber with which it is used but is symmetric with an axis offset from the central axis. When placed radially outside of an RF coil, it may reduce the azimuthal asymmetry in the plasma produced by the RF coil. Axisymmetric magnet arrays may include additional axisymmetric electromagnet coils. One axisymmetric coil is advantageously placed radially inside of the non-axisymmetric coil to carry opposed currents. The multiple electromagnet coils may be embedded in a molded encapsulant having a central bore about a central axis providing the axisymmetry of the coils.

Abstract: There is provided a plasma processing apparatus including a processing chamber 100 configured to perform a plasma process on a wafer W; an upper electrode 105 and a lower electrode 110 arranged to face each other in the processing chamber 100 and configured to form a processing space therebetween; and a high frequency power supply 150 connected with at least one of the upper electrode 105 and the lower electrode 110 and configured to output a high frequency power into the processing chamber 100. The upper electrode 105 includes an upper base 105a made of a dielectric material, and a plurality of fine holes A having a diameter equal to or less than twice a thickness of a sheath are formed in the upper base 105a.

Abstract: A shower plate is disposed in a processing chamber in a plasma processing apparatus, and plasma excitation gas is released into the processing chamber so as to generate plasma. A ceramic member having a plurality of gas release holes having a diameter of 20 ?m to 70 ?m, and/or a porous gas-communicating body having pores having a maximum diameter of not more than 75 ?m communicating in the gas-communicating direction are sintered and bonded integrally with the inside of each of a plurality of vertical holes which act as release paths for the plasma excitation gas.

Abstract: An edge ring assembly surrounds a substrate support surface in a plasma etching chamber. The edge ring assembly comprises an edge ring and a dielectric spacer ring. The dielectric spacer ring, which surrounds the substrate support surface and which is surrounded by the edge ring in the radial direction, is configured to insulate the edge ring from the baseplate. Incorporation of the edge ring assembly around the substrate support surface can decrease the buildup of polymer at the underside and along the edge of a substrate and increase plasma etching uniformity of the substrate.

Abstract: Methods and apparatus for modifying RF current path lengths are disclosed. Apparatus includes a plasma processing system having an RF power supply and a lower electrode having a conductive portion. There is included an insulative component disposed in an RF current path between the RF power supply and the conductive portion. There are included a plurality of RF path modifiers disposed within the insulative component, the plurality of RF path modifiers being disposed at different angular positions relative to a reference angle drawn from a center of the insulative component, whereby at least a first one of the plurality of RF path modifiers is electrically connected to the conductive portion and at least a second one of the plurality of the plurality of RF path modifiers is not electrically connected to the conductive portion.

Abstract: An etching chamber 1 incorporates a focus ring 9 so as to surround a semiconductor wafer W provided on a lower electrode 4. The plasma processor is provided with an electric potential control DC power supply 33 to control the electric potential of this focus ring 9, and so constituted that the lower electrode 4 is supplied with a DC voltage of, e.g., ?400 to ?600 V to control the electric potential of the focus ring 9. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.

Abstract: The invention relates to a plasma stamp, with which surfaces can be subjected to a plasma treatment. In addition, the invention relates to a plasma treatment device, with which surfaces can be subjected to a plasma treatment, and also a plasma treatment method. In addition, the invention relates to a method for producing a plasma stamp.

Abstract: A substrate processing apparatus includes: a cylindrical shaped chamber configured to accommodate a substrate; a movable electrode capable of moving along a central axis of the cylindrical shaped chamber within the cylindrical shaped chamber; a facing electrode facing the movable electrode within the cylindrical shaped chamber; and an expansible/contractible partition wall connecting the movable electrode with an end wall on one side of the cylindrical shaped chamber. A high frequency power is applied to a first space between the movable electrode and the facing electrode, a processing gas is introduced thereto, and the movable electrode is not in contact with a sidewall of the cylindrical shaped chamber, a first dielectric member is provided at the cylindrical shaped chamber's sidewall facing the movable electrode, and an overlap area between the first dielectric member and a side surface of the movable electrode is changed according to movement of the movable electrode.

Abstract: A plasma processing system with improved component temperature control is disclosed. The system may include a plasma processing chamber having a chamber wall. The system may also include an electrode disposed inside the plasma processing chamber. The system may also include a support member disposed inside the plasma processing chamber for supporting the electrode. The system may also include a support plate disposed outside the chamber wall. The system may also include a cantilever disposed through the chamber wall for coupling the support member with the support plate. The system may also include a lift plate disposed between the chamber wall and the support plate. The system may also include thermally resistive coupling mechanisms for mechanically coupling the lift plate with the support plate.

Abstract: A plasma processing apparatus includes a processing chamber that plasma processes a target object therein, first and second electrodes that are provided in the processing chamber to face each other and have a processing space therebetween, and a high frequency power source that is connected to at least one of the first and second electrodes to supply high frequency power to the processing chamber. At least one of the first and second electrodes includes a base formed of a metal, a dielectric material provided at a central portion of a plasma side of the base, and a first resistor provided between the dielectric material and plasma, and formed of a metal with a predetermined pattern.

Abstract: There is provided a substrate supporter capable of securely supporting a substrate such as a wafer on which a device having a predetermined thin film pattern is formed to remove various impurities formed on the rear surface of the substrate, and a plasma processing apparatus having the same. The plasma processing apparatus includes: at least one arm; and a supporting portion extending from the arm toward a substrate seating position of the substrate, so that the plasma processing apparatus can reduce the likelihood of arc discharges compared with conventional dry etching to increase process yield and product reliability, and ensure stable mounting of a substrate.

Abstract: Provided are a substrate holder, a substrate supporting apparatus, a substrate processing apparatus, and a substrate processing method. Particularly, there are provided a substrate holder, a substrate supporting apparatus, a substrate processing apparatus, and a substrate processing method that are adapted to improve process efficiency and etch uniformity at the back surface of a substrate.

Abstract: A method for generating plasma for removing metal oxide from a substrate is provided. The method includes providing a powered electrode assembly, which includes a powered electrode, a dielectric layer, and a wire mesh disposed between the powered electrode and the dielectric layer. The method also includes providing a grounded electrode assembly disposed opposite the powered electrode assembly to form a cavity wherein the plasma is generated. The wire mesh is shielded from the plasma by the dielectric layer when the plasma is present in the cavity, which has an outlet at one end for providing the plasma to remove the metal oxide. The method further includes introducing at least one inert gas and at least one process gas into the cavity. The method yet also includes applying an rf field to the cavity using the powered electrode to generate the plasma from the inert and the process gas.

Abstract: An internal member of a plasma processing vessel includes a base material and a film formed by thermal spraying of ceramic on a surface of the base material. The film is formed of ceramic which includes at least one kind of element selected from the group consisting of B, Mg, Al, Si, Ca, Cr, Y, Zr, Ta, Ce and Nd. In addition, at least a portion of the film is sealed by a resin.

Abstract: A plasma processing apparatus includes a depressurizable processing chamber; an electrode provided in the processing chamber; and a high frequency power supply for supplying a high frequency power into the processing chamber to thereby generating a plasma. Further, the electrode includes a base formed of a dielectric material; a dielectric body buried in the base and formed of the same dielectric material as the base; and a conductive adhesive layer provided in a bonding portion between the base and the dielectric body, the conductive adhesive layer bonding together and fixing the base and the dielectric body to each other.

Abstract: A plasma processing system having a plasma processing chamber configured for processing a substrate is provided. The plasma processing system includes at least an upper electrode and a lower electrode for processing the substrate. The substrate is disposed on the lower electrode during plasma processing, where the upper electrode and the substrate forms a first gap. The plasma processing system also includes an upper electrode peripheral extension (UE-PE). The UE-PE is mechanically coupled to a periphery of the upper electrode, where the UE-PE is configured to be non-coplanar with the upper electrode. The plasma processing system further includes a cover ring. The cover ring is configured to concentrically surround the lower electrode, where the UE-PE and the cover ring forms a second gap.

Abstract: An electrode is exposed to a plasma generation volume and is defined to transmit radiofrequency power to the plasma generation volume, and includes an upper surface for holding a substrate in exposure to the plasma generation volume. A gas distribution unit is disposed above the plasma generation volume and in a substantially parallel orientation to the electrode. The gas distribution unit includes an arrangement of gas supply ports for directing an input flow of a plasma process gas into the plasma generation volume in a direction substantially perpendicular to the upper surface of the electrode. The gas distribution unit also includes an arrangement of through-holes that each extend through the gas distribution unit to fluidly connect the plasma generation volume to an exhaust region. Each of the through-holes directs an exhaust flow from the plasma generation volume in a direction substantially perpendicular to the upper surface of the electrode.

Abstract: The present invention provides a method for plasma dicing a substrate, the method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing a work piece onto the work piece support, said work piece having a support film, a frame and the substrate; loading the work piece onto the work piece support; applying a tensional force to the support film; clamping the work piece to the work piece support; generating a plasma using the plasma source; and etching the work piece using the generated plasma.