Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.

Abstract: A ring-shaped component for use in a plasma processing includes an inner ring-shaped member provided to surround an outer periphery of a substrate to be subjected to the plasma processing and an outer ring-shaped member provided to surround an outer periphery of the inner ring-shaped member. The outer ring-shaped member has a first surface facing a processing space side and a second surface facing an opposite side of the plasma generation side. The second surface has thereon one or more ring-shaped grooves.

Abstract: Positioning accuracy of a component in a substrate processing apparatus can be improved higher than a conventional case without increasing the insertion accuracy of positioning pins into positioning holes. Provided is a substrate processing apparatus including a mounting table 110 including a susceptor 114 having a substrate mounting surface 115 on which a wafer W is mounted and a focus ring mounting surface 116 on which a focus ring 124 is mounted; a plurality of positioning pins 200 made of a material expandable in a diametric direction by heating. Each positioning pin is inserted into a positioning hole (first reference hole) formed in the focus ring mounting surface of the susceptor and into a positioning hole (second reference hole) formed in the focus ring, and expanded in the diametric direction by heating and fitted into the positioning holes, thus allowing a position of the focus ring to be aligned.

Abstract: A showerhead electrode includes inner and outer steps at an outer periphery thereof, the outer step cooperating with a clamp ring which mechanically attaches the electrode to a backing plate.

Abstract: The object of the invention is to provide a plasma processing apparatus having enhanced plasma processing uniformity. The plasma processing apparatus comprises a processing chamber 1, means 13 and 14 for supplying processing gas into the processing chamber, evacuation means 25 and 26 for decompressing the processing chamber 1, an electrode 4 on which an object 2 to be processed such as a wafer is placed, and an electromagnetic radiation power supply 5A, wherein at least two kinds of processing gases having different composition ratios of O2 or N2 are introduced into the processing chamber through different gas inlets so as to control the in-plane uniformity of the critical dimension while maintaining the in-plane uniformity of the process depth.

Abstract: A first inert gas (5) is supplied into a reaction space (1) and a high-frequency power supply (4) applies a high-frequency electric field so that a primary plasma (6) composed of the first inert gas which has been made into the plasma is ejected from the reaction space. A mixed gas area (10) in which a mixed gas (8) having a second inert gas (12) as a main ingredient and a proper amount of a reactive gas (13) mixed is formed. The primary plasma collides into the mixed gas area to generate a secondary plasma (11) composed of the mixed gas which has been made into the plasma, and the secondary plasma is sprayed on a processed object (S) to carry out a plasma processing. Accordingly, the plasma processing is carried out in a wide range by an atmospheric pressure plasma generated by a small input power.

Abstract: An etching chamber 1 incorporates a focus ring 9 so as to surround a semiconductor wafer W provided on a lower electrode 4. The plasma processor is provided with an electric potential control DC power supply 33 to control the electric potential of this focus ring 9, and so constituted that the lower electrode 4 is supplied with a DC voltage of, e.g., ?400 to ?600 V to control the electric potential of the focus ring 9. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.

Abstract: A method and apparatus for providing flow into a processing chamber are provided. In one embodiment, a vacuum processing chamber is provided that includes a substrate support pedestal disposed in an interior volume of a chamber body, a lid enclosing the interior volume, a gas distribution plate positioned below the lid and above the substrate support pedestal, and a vortex inducing gas inlet oriented to induce a vortex of gas circulating in a plenum around a center line of the chamber body prior to the gas passing through the gas distribution plate.

Abstract: Plasma reactors with adjustable plasma electrodes and associated methods of operation are disclosed herein. The plasma reactors can include a chamber, a workpiece support for holding a microfeature workpiece, and a plasma electrode in the chamber and spaced apart from the workpiece support. The plasma electrode has a first portion and a second portion configured to move relative to the first portion. The first and second portions are configured to electrically generate a plasma between the workpiece support and the plasma electrode.

Abstract: A wide area atmospheric pressure plasma jet apparatus including a transmission mechanism, a plasma housing and two plasma-generating devices is provided. The transmission mechanism includes a rotation output end that has a center axis. The plasma housing has an opening. The plasma housing further has a air-attracting hole near the rotation output end and extended from an outer wall of the plasma housing to the interior of the plasma housing, so that the heat of the plasma housing can be dissipated due to the generated gas circulation. The plasma-generating devices are disposed within the plasma housing and connected with the rotation output end. Each of the plasma-generating devices has a plasma nozzle located at the opening and tilts from the center axis. When the rotation output end drives the plasma-generating devices to rotate, two plasma beams are obliquely ejected from the plasma nozzle and the plasma processing area is increased.

Abstract: A method and apparatus for processing a substrate are provided. The chamber body comprises a chamber bottom and a sidewall having a slit valve. A substrate support comprising a support body is disposed in the chamber body. A first end of at least one wide RF ground strap is coupled with the support body and a second end of at least one RF ground strap is coupled with the chamber bottom. At least one extension bar is positioned along a peripheral edge of the support body. The method comprises providing a processing chamber having a slit valve and a substrate support, providing RF power to a distribution plate disposed over the substrate support, flowing gas through the distribution plate, plasma processing a substrate disposed on the substrate support, and reducing the generation of plasma adjacent to the slit valve.

Abstract: Prior to wafer processing, pressure ratio control is executed on a divided flow rate adjustment means so as to adjust the flow rates of divided flows to achieve a target pressure ratio with regard to the pressures in the individual branch passages. As the processing gas from a processing gas supply means is diverted into first and second branch pipings under the pressure ratio control and the pressures in the branch passages then stabilize, the control on the divided flow rate adjustment means is switched to steady pressure control for adjusting the flow rates of the divided flows so as to hold the pressure in the first branch passage at the level achieved in the stable pressure condition. Only after the control is switched to the steady pressure control, an additional gas is delivered into the second branch passage via an additional gas supply means.

Abstract: A method and apparatus for cleaning and surface conditioning objects using plasma are disclosed. One embodiment of the apparatus for cleaning conductive objects using plasma discloses at least one planar dielectric barrier plate having a first surface and a second surface, and at least one electrode proximate the second surface of the at least one planar dielectric barrier plate, wherein the planar dielectric barrier plate is positioned to receive at least one object substantially orthogonally proximate the first surface. Another embodiment of the apparatus includes a ground plane for cleaning non-conductive objects, wherein the ground plane has apertures sized and arranged for receiving each object to be cleaned.

Abstract: This disclosure provides systems, methods and apparatus for fabricating electromechanical system devices within a plasma-etch reaction chamber. In one aspect, a plasma-etch system includes a plasma-etch reaction chamber, an inlet in fluid communication with the reaction chamber, a cathode positioned within the reaction chamber and a non-hollow anode positioned within the reaction chamber between the inlet and the cathode. The inlet is configured to introduce a process gas into the reaction chamber such that at least a portion of the process gas strikes an upper surface of the anode and is allowed to flow across the upper surface and around the edges of the anode. The anode can be a liner plate in place of a showerhead.

Abstract: An arcless, atmospheric-pressure plasma generating apparatus capable of producing a large-area, temperature-controlled, stable discharge at power densities between about 0.1 W/cm3 and about 200 W/cm3, while having an operating gas temperature of less than 50° C., for processing materials outside of the discharge, is described. The apparatus produces active chemical species, including gaseous metastables and radicals which may be used for polymerization (either free radical-induced or through dehydrogenation-based polymerization), surface cleaning and modification, etching, adhesion promotion, and sterilization, as examples. The invention may include either a cooled rf-driven electrode or a cooled ground electrode, or two cooled electrodes, wherein active components of the plasma may be directed out of the plasma and onto an external workpiece without simultaneously exposing a material to the electrical influence or ionic components of the plasma.

Abstract: An etching equipment including a stage, a plasma generator, a center electrode, and a peripheral electrode is provided. The work-piece is mounted on the mounting surface of the stage. The plasma generator generates plasma above the stage, wherein the plasma generator generates plasma at a higher concentration around a center axis of the mounting surface than on the center axis. The center electrode is disposed at a lower side of a space in which the plasma generator generates plasma and at a position through which the center axis passes. The center electrode is configured capable of controlling a potential of the center electrode. The peripheral electrode is disposed at an upper side of the stage and a lower side of the center electrode, wherein the peripheral electrode extends along a periphery of the center electrode. The peripheral electrode is configured capable of controlling a potential of the peripheral electrode.

Abstract: To provide a technique which cleans an attracting face of a mechanism for electrostatically attracting an object to be processed inside a vacuum processing apparatus and keeps its attracting force constant. The method of the present invention is for cleaning an attracting face of a hot plate which holds the object to be processed inside a vacuum processing chamber through electrostatic attraction. The invention method includes a step of cleaning the attracting face of the hot plate by applying a high-frequency electric power of 13.56 MHz to a metallic base arranged under and near the hot plate in a state in which a cleaning gas is introduced into the vacuum processing chamber.

Abstract: In a plasma reactor employing source and bias RF power generators, plasma is stabilized against an engineered transient in the output of either the source or bias power generator by a compensating modulation in the other generator.

Abstract: An apparatus for cleaning the specimen and interior specimen chamber of Transmission Electron Microscopes, and similar electron- or charged-particle-beam instruments consisting of a plasma cleaning device mounted on a hollow rod that replaces the stage through the air lock of the instrument by being the same shape and size as the stage support rod. The plasma cleaning device is a small hollow cathode that is excited by RF power. Air or other oxygen containing mixtures is admitted to the plasma through the hollow rod at a pressure below 1 Torr. The plasma creates oxygen radicals from the oxygen containing gas. The oxygen radicals oxidize the hydrocarbons contamination and convert them to easily pumped gases. The apparatus can be attached to the electron microscope whenever cleaning is needed, and then is easily removed to return the instrument to its analytical function.

Abstract: An apparatus for etching an edge of a wafer includes a chamber, a chuck disposed inside the chamber upon which the wafer is disposed, a plate spaced apart from the wafer and disposed above the wafer, and an edge ring formed along the edge of the wafer and combined with an outer periphery of the plate, wherein the edge ring comprises a ring base spaced a distance apart from the wafer to form a parallel plane with respect to the wafer, and a first ring protrusion protruding from the ring base to insulate the edge of the wafer from a central region of the wafer.

Abstract: RF power is coupled to one or more RF drive points (50-56) on an electrode (20-28) of a plasma chamber such that the level of RF power coupled to the RF drive points (51-52, 55-56) on the half (61) of the electrode that is closer to the workpiece passageway (12) exceeds the level of RF power coupled to the RF drive points (53-54), if any, on the other half (62) of the electrode. Alternatively, RF power is coupled to one or more RF drive points on an electrode of a plasma chamber such that the weighted mean of the drive point positions is between the center (60) of the electrode and the workpiece passageway. The weighted mean is based on weighting each drive point position by the time-averaged level of RF power coupled to that drive point position. The invention offsets an increase in plasma density that otherwise would exist adjacent the end of the electrode closest to the passageway.

Abstract: A method and apparatus for removing native oxides from a substrate surface is provided. In one embodiment, the apparatus for removing native oxides from a substrate surface includes a showerhead assembly. One embodiment of a showerhead assembly includes a hollow cylinder, a disc and an annular mounting flange. The hollow cylinder has a top wall, a bottom wall, an inner diameter wall and an outer diameter wall. The disc has a top surface and a lower surface. The top surface is coupled to the inner diameter wall. The lower surface is coupled to the bottom wall. The disc has a plurality of apertures connecting the lower surface to the top surface. The annular mounting flange extends from the outer diameter wall of the hollow cylinder. The mounting flange has an upper surface and a lower surface. The upper surface is coplanar with the top wall of the hollow cylinder. The lower surface having an elevation above the top surface of the disc.

Abstract: Plasma confinement rings are adapted to reach sufficiently high temperatures on plasma-exposed surfaces of the rings to substantially reduce polymer deposition on those surfaces. The plasma confinement rings include an RF lossy material effective to enhance heating at portions of the rings. A low-emissivity material can be provided on a portion of the plasma confinement ring assembly to enhance heating effects.

Abstract: A plasma reactor for processing a workpiece such as a semiconductor wafer using predetermined transients of plasma bias power or plasma source power has unmatched low power RF generators synchronized to the transients to minimize transient-induced changes in plasma characteristics.

Abstract: An apparatus for the plasma treatment of molds (2), in particular for contact lens molds, comprises a treatment chamber (50), in which a first electrode (51) is arranged facing a carrier (1;4) for carrying the molds (2) to be treated. The carrier (1;4) forms the second electrode (52) and comprises a first metal plate (10;40) having holes (100;400) therein and a second metal plate (11;41) which is arranged spaced apart from the first metal plate (10;40), and which is connected to the first metal plate (10;40) in an electrically conductive manner (12,13;43). The molds (2) are arranged on the second metal plate (11;41) with their molding surfaces (210) facing towards the first electrode (51) and are exposable to plasma through the holes (100;400) in the first metal plate (10;40).

Abstract: The present invention generally comprises a diffuser plate for a PECVD chamber. The diffuser plate comprises a plurality of hollow cathode cavities. The edge of the diffuser plate that will reside closest to a slit valve within a processing chamber may have the shape and/or size of the hollow cathode cavities adjusted to compensate for the proximity to the slit valve. By adjusting the shape and/or size of the hollow cathode cavities closest to the slit valve, the diffuser plate may permit a uniform plasma distribution across the processing chamber and thus, a uniform film thickness upon a substrate during a PECVD process.

Abstract: Devices and methods for generating a low-temperature, atmospheric pressure plasma are disclosed. A plasma device may include a first electrode having an inlet for a gas, a second electrode having an outlet for the gas and disposed proximate to the first electrode to form a substantially uniform gap therebetween. The gas flows along the substantially uniform gap and from a plurality of different directions to converge and flow through the outlet. High frequency electrical power is applied between the first electrode and the second electrode to generate a plasma within the gas flow emerging at the outlet. Precursor chemicals are added to the plasma flow at the outlet. Various electrode designs may be implemented and various applications involving surface treatment of materials with the low-temperature atmospheric plasma, including surface activation, cleaning, sterilization, etching and deposition of thin films are disclosed.

Abstract: A mechanism for adjusting an orientation of an electrode in a plasma processing chamber is disclosed. The plasma processing chamber may be utilized to process at least a substrate, which may be inserted into the plasma processing chamber in an insertion direction. The mechanism may include a support plate disposed outside a chamber wall of the plasma processing chamber and pivoted relative to the chamber wall. The support plate may have a first thread. The mechanism may also include an adjustment screw having a second thread that engages the first thread. Turning the adjustment screw may cause translation of a portion of the support plate relative to the adjustment screw. The translation of the portion of the support plate may cause rotation of the support plate relative to the chamber wall, thereby rotating the electrode with respect to an axis that is orthogonal to the insertion direction.

Abstract: An electrode assembly for a plasma reaction chamber used in semiconductor substrate processing. The assembly includes an upper showerhead electrode which includes an inner electrode mechanically attached to a backing plate by a clamp ring and an outer electrode attached to the backing plate by a series of spaced apart cam locks. A guard ring surrounds the backing plate and is movable to positions at which openings in the guard ring align with openings in the backing plate so that the cam locks can be rotated with a tool to release cam pins extending upward from the upper face of the outer electrode. To compensate for differential thermal expansion, the clamp ring can include expansion joins at spaced locations which allow the clamp ring to absorb thermal stresses.

Abstract: A method of cleaning a bevel edge of a substrate in an etch processing chamber is provided. The method includes placing a substrate on a substrate support in a processing chamber. The method also includes flowing a cleaning gas through a gas feed located near a center of a gas distribution plate, disposed at a distance from the substrate support. The method further includes generating a cleaning plasma near a bevel edge of the substrate to clean the bevel edge by powering a bottom edge electrode or a top edge electrode with a RF power source and grounding the edge electrode that is not powered by the RF power source, the bottom edge electrode surrounds the substrate support and the top edge electrode surrounds the gas distribution plate.

Abstract: A plasma system for substrate processing comprising, a conducting electrode (b, bb) on which one or more substrates (d) can be held; a second conducting electrode (a) placed adjacent but separated from the substrate holding electrode on the side away from the side where the substrates are held; and a gas mixture distribution shower head (e) placed away from the conducting electrode on the side where the substrates are held for supplying the gas mixture (f) needed for processing the substrates in a uniform manner; such that a plasma configuration initiated and established, between the conducting electrode holding the substrates and the second conducting electrode envelops the electrode holding the substrate, is kept away from the shower head activating and distributing the gas mixture through orifices (ee) in the shower head, thereby providing the advantages of improved uniformity, yield and reliability of the process.

Abstract: A method for cleaning a substrate having organic and inorganic residues disposed thereon is provided. The method includes removing organic residue from the substrate using atmospheric oxygen plasma, and removing inorganic residue from the substrate using cryogenic CO2. The substrate may be pretreated using a benign cooling agent, and post-treated using a dilute wet chemical cleaning method.

Abstract: A decoupled capacitive CVD reactor is described, which provides improved CVD capabilities, including processing at lower temperatures, performing alternating deposition and etching steps, and performing in situ cleaning of the chamber, without the need for a remote plasma source. Two RF frequencies are coupled to the susceptor, while the anode is grounded. The high frequency RF source is operated so as to control the plasma density, while the low frequency RF source is operated to control species bombardment on the substrate, so as to control the properties of the film being deposited. Additionally, both RF sources may be controlled, together with selection of gasses supplied to the chamber, to operate the chamber either in deposition mode, partial etch mode, etching mode, or cleaning mode.

Abstract: An ALD apparatus includes: a process chamber that accommodates a boat charged with a plurality of wafers; gas supply systems that supplies process gases to the wafers; a pair of electrodes arranged in a stacked direction of the wafers; a high-frequency power source that supplies a high-frequency power to the pair of the electrodes; a variable impedance element connected to a front end opposite to the high-frequency power of the pair of the electrodes; and a control unit that changes an output frequency of the high-frequency power source. By moving the local minimum point of the voltage distribution through the change of the output frequency of the high-frequency power source during the plasma discharge, the plasma generation amount within a pair of discharge electrodes is uniformized. Thus, the processing non-uniformity between the wafers stacked in the boat is suppressed, and the processing is uniformized over the total boat length.

Abstract: RF power is coupled with different phase offsets to different RF connection points on an electrode of a plasma chamber. Preferably, the number of different RF connection points and corresponding phase offsets is at least four, and the positions of the RF connection points are distributed along two orthogonal dimensions of the electrode. Preferably, power to each respective RF connection point is supplied by a respective RF power supply, wherein each power supply synchronizes its phase to a common reference RF oscillator.

Abstract: A method for generating plasma for removing an edge polymer from a substrate is provided. The method includes providing a powered electrode assembly, which includes a powered electrode, a dielectric layer, and a wire mesh disposed between the powered electrode and the dielectric layer. The method also includes providing a grounded electrode assembly disposed opposite the powered electrode assembly to form a cavity wherein the plasma is generated. The wire mesh is shielded from the plasma by the dielectric layer when the plasma is present in the cavity, which has an outlet at one end for providing the plasma to remove the edge polymer. The method further includes introducing at least one inert gas and at least one process gas into the cavity. The method yet also includes applying an RF field to the cavity using the powered electrode to generate the plasma from the inert gas and process gas.

Abstract: A feeder rod that transmits radio-frequency power via a matcher to a susceptor used in plasma generation that is disposed inside a processing chamber where a wafer undergoes a predetermined type of plasma processing, includes as an integrated part thereof electrical characteristics measurement probes. The integrated feeder rod unit can be detachably installed as a whole between the matcher and the processing chamber.

Abstract: In a high-frequency power source, a malfunction is prevented by precisely removing harmonic components or a modulated wave component which develops while producing a plasma, and a proper high frequency power can be impressed on a plasma processing apparatus. The high-frequency power source includes a power monitor constituted of a directional coupler, a mixer, a 100 kHz low-pass filter, a low-frequency detector, and an oscillator. A 100 MHz high-frequency wave including modulated wave components and the like extracted by the directional coupler and 99.9 MHz high-frequency wave oscillated by the oscillator are added by the mixer. An output of the addition is converted by the low-frequency detector into 100 kHz, resulting in detection.

Abstract: Internal components of plasma reactors are composed of a toleratable, ceramic filled plasma-useful polymer such as a high temperature engineering thermoplastic, preferably a polyamideimide. The parts exhibit a low erosion rate upon exposure to plasma at low pressure.

Abstract: Embodiments of the invention provide an apparatus which provide good RF uniformity within a processing chamber. In one embodiment, an apparatus includes a substrate support assembly, a terminal, and a dielectric insulator. The substrate support assembly has a center passage formed along a center axis. An RF transmission line is provided. The RF transmission line has a substantially vertical portion and a substantially horizontal portion, wherein the terminal is coupled to the substantially horizontal portion of the RF transmission line. The dielectric insulator circumscribes the substantially horizontal portion of the RF transmission line. The dielectric insulator has a first opening through which the terminal passes.

Abstract: Disclosed herein is a flat panel display manufacturing apparatus in a predetermined process is performed using plasma generated therein. In such a flat panel display manufacturing apparatus, a process gas is supplied into a chamber in an evenly diffused state to generate even plasma inside a symmetrical interior space of the chamber. Consequently, the flat panel display manufacturing apparatus can appropriately control flow rate of the plasma, thereby being capable of performing even processing on a large-scale substrate. In the flat panel display manufacturing apparatus, a substrate pedestal thereof is provided with a combination of vertical and horizontal shielding members, thereby being entirely protected from attack of the plasma, resulting in an increased life-span.

Abstract: An electrode assembly for a plasma reaction chamber used in semiconductor substrate processing. The assembly includes an upper showerhead electrode which is mechanically attached to a backing plate by a series of spaced apart cam locks. A thermally and electrically conductive gasket with projections thereon is compressed between the showerhead electrode and the backing plate at a location three to four inches from the center of the showerhead electrode. A guard ring surrounds the backing plate and is movable to positions at which openings in the guard ring align with openings in the backing plate so that the cam locks can be rotated with a tool to release locking pins extending from the upper face of the electrode.

Abstract: A plasma treating apparatus adapted to provide a predetermined plasma treatment to an object W to be treated comprises a processing chamber 12 configured to be capable of being vacuumed, an object holding means 20 adapted to hold the object to be treated, a high frequency power source 58 adapted to generate high frequency voltage, a plasma gas supplying means 38 adapted to supply a plasma generating gas to be treated to generate plasma to the processing chamber, a pair of plasma electrodes 56, 56B connected to the output side of the high frequency power source via wirings 60 to generate plasma in the processing chamber, the pair of plasma electrodes being brought into an excited electrode state. In addition, a high frequency matching means 72 is provided in the middle of the wirings. In this case, each of the plasma electrodes 56A, 56B is not grounded. Thus, the plasma density can be increased, and the efficiency of generating plasma can be enhanced.

Abstract: A method for forming a feature in an etch layer is provided. A photoresist layer is formed over the etch layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls. A control layer is formed over the photoresist layer and bottoms of the photoresist features. A conformal layer is deposited over the sidewalls of the photoresist features and control layer to reduce the critical dimensions of the photoresist features. Openings in the control layer are opened with a control layer breakthrough chemistry. Features are etched into the etch layer with an etch chemistry, which is different from the control layer break through chemistry, wherein the control layer is more etch resistant to the etch with the etch chemistry than the conformal layer.

Abstract: A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber.

Abstract: A blow-off part 152 is provided with a blow-off port 1a? which is dimensioned small enough so as not to allow a blow-off stream to be blown off directly to a part of a wafer W which part is located at the more internal side of the wafer than the outer edge of the wafer W and not to be subjected to plasmatizing process. A suction part 151 is provided with a suction port 81A in associating with the blow-off part 152. The suction port 81A is disposed proximate to the blow-off port 1a? and forms a suction stream oriented generally in the reverse direction with respect to the blow-off stream.

Abstract: A semiconductor fabrication apparatus and a method of fabricating a semiconductor device using the same performs semiconductor etching and deposition processes at an edge of a semiconductor substrate after disposing the semiconductor substrate at a predetermined place in the semiconductor fabrication apparatus. The semiconductor fabrication apparatus has lower, middle and upper electrodes sequentially stacked. The semiconductor substrate is disposed on the middle electrode. Semiconductor etching and deposition processes are performed on the semiconductor substrate in the semiconductor fabrication apparatus. The semiconductor fabrication apparatus forms electrical fields along an edge of the middle electrode during performance of the semiconductor etching and deposition processes.

Abstract: Disclosed is a substrate processing apparatus, including: a processing container; a gas supply section to supply a desired processing gas to the processing container; a gas exhaust section to exhaust a surplus of the processing gas from the processing container; a substrate placing member to place a plurality of substrates thereon in a stacked state in the processing container; and an electrode, to which high frequency electric power is applied, to generate plasma for exciting the processing gas, the electrode including two thin and long linear sections disposed in parallel and a short-circuit section to electrically short-circuit one ends of the linear sections, and the linear sections extending beside the substrates in a direction substantially perpendicular to main faces of the substrates.

Abstract: An apparatus, which performs a plasma process on a target substrate by using plasma, includes first and second electrodes in a process chamber to oppose each other. An RF field, which turns a process gas into plasma by excitation, is formed between the first and second electrodes. An RF power supply, which supplies RF power, is connected to the first or second electrode through a matching circuit. The matching circuit automatically performs input impedance matching relative to the RF power. A variable impedance setting section is connected to a predetermined member, which is electrically coupled with the plasma, through an interconnection. The impedance setting section sets a backward-direction impedance against an RF component input to the predetermined member from the plasma. A controller supplies a control signal concerning a preset value of the backward-direction impedance to the impedance setting section.

Abstract: [Problems] To provide a silicon electrode plate for plasma etching that suppresses the unevenness of the surface caused by plasma etching so as to ensure uniform etching. [Means for Solving the Problems] The silicon electrode plate for plasma etching is constituted by single-crystal silicon in which B and Al have been added as dopants, wherein the concentration of Al is equal to or greater than 1×1013 atoms/cm3. In the silicon electrode plate for plasma etching, the electrical characteristic of single-crystal silicon is made uniform in a plane. Thus, the occurrence of unevenness of the surface may be minimized when the surface is depleted during plasma etching, and the occurrence of cracks may be suppressed.