Abstract: The invention relates to a drive mechanism for a vacuum treatment apparatus by which substrate holders can be transported around an axis (A—A) from an entrance airlock to an exit airlock. A stationary supporting column (1) is disposed in the center and on it a rotatory drive chamber (6) is borne which has control rods (9) for a rotation and a radial displacement of the substrate holders. In the rotatory drive chamber (6), a motor (4) and rotatory displacement drives for the control rods (9) are arranged on the supporting column (1), the control rods being in active connection each with a corresponding substrate holder.

Abstract: In a substrate vacuum processing chamber, a second inner slit passage door apparatus and method to supplement the normal slit valve and its door at the outside of the chamber. The inner slit passage door, blocks the slit passage at or adjacent the substrate processing location in a vacuum processing chamber to prevent process byproducts from depositing on the inner surfaces of the slit passage beyond the slit passage door and improves the uniformity of plasma in the processing chamber by eliminating a large cavity adjacent to the substrate processing location into which the plasma would otherwise expand.

Abstract: A semiconductor processing chamber having a plurality of ribs on an exterior surface of the chamber is provided. The ribs are positioned relative to the chamber such that shadows cast into the chamber by the ribs are offset from one another, thus more uniformly distributing radiant energy entering the chamber. In one embodiment, the ribs are positioned on the exterior surface of the chamber so that they have dissimilar radial distances from a center of the chamber. When a substrate rotates within the chamber, shadows produced by the ribs on a first side of the chamber fall substantially between secondary shadows produced by the ribs on a second side of the chamber. Likewise, shadows produced by the ribs on the second side of the chamber fall substantially between the secondary shadows produced by the ribs on the first side of the chamber.

Abstract: An apparatus for atomic layer deposition preventing mixing of a precursor gas and an input gas. From the apparatus a flow of the input gas is provided over a surface of the workpiece wherein a beam of the electromagnetic radiation is directed into the input gas in close proximity to the surface of the workpiece, but spaced a finite distance therefrom. The input gas is dissociated by the beam producing a high flux point of use generated reactive gas species that reacts with a surface reactant formed on the surface of the workpiece by a direct flow of the precursor gas flown from the dispensing unit. The surface reactant and reactive gas species react to form a desired monolayer of a material on the surface of the workpiece.

Abstract: Provided is a semiconductor manufacturing system capable of loading a plurality of semiconductor wafers into a vertical reaction tube, and performing a thermal process. The semiconductor manufacturing system includes a first wafer loading boat, a second wafer loading boat, a plate cap, a door plate and a lifting system. The first wafer loading boat is mounted in the reaction tube and includes a plurality of holder supporters that support a wafer holder in a shape of a board, the wafer holder being loaded vertically at a predetermined interval and on which the semiconductor wafer is rested on. The second wafer loading boat is inside or outside the first wafer loading boat and has a wafer supporter that supports the semiconductor wafer. The lifting system moves either the first wafer loading boat or the second wafer loading boat vertically and separates the semiconductor wafer, which is loaded on the wafer holder, from the wafer holder at a predetermined height.

Abstract: A semiconductor fabricating apparatus having a structure, which facilitates a loading and unloading operation of wafers while having a low effect by a high temperature during a heat treatment. The semiconductor fabricating apparatus includes a plurality of ring-shaped holder having brims and recessed portions, the brims for mounting the to-be-processed wafers thereon, thereby performing the required heat treatment. A tweezer plate of a wafer loading-transferring device is inserted onto the recessed portion or taken out therefrom, and the inserted tweezer plate is ascended or descended, so that the wafer can be inserted on the brims or taken out therefrom.

Abstract: A wafer holder comprises a circular, disc-shaped main portion and a rib extending generally downward from a lower surface of the main portion. The rib encircles the vertical center axis of the wafer holder. The upper surface of the main portion has a wafer-receiving pocket defined by an inner pocket surface surrounded by an outer shoulder. The rib is closed to completely surround a vertical center axis of the main portion. The rib helps to prevent the main portion from inducing symmetric concavity during the manufacture of the wafer holder. In other words, the rib helps to maintain the flatness of the upper surface of the outer shoulder while the main portion is made symmetrically concave.

Abstract: A workpiece is supported on a gas cushion to reduce mechanical stresses on the workpiece during processing. A plenum having a workpiece support flange for receiving the workpiece is connected to a gas supply. When gas flows into the plenum and pressure increases sufficiently to lift the workpiece, the workpiece is lifted and the gas flows out of the plenum between the flange and the workpiece edge. The workpiece is thus supported above the flange by the gas during processing.

Abstract: The susceptor (10) of a plasma treating device, or the electrostatic chuck (12) of a substrate table is formed by ceramic thermal spray method. A ceramic spray layer (12A) is pore-sealed by methacrylic resin (12D). Resin raw material mainly containing methyl methacrylate is applied to and impregnated into the ceramic spray layer and then is cured to thereby fill pores between ceramic particles in the ceramic spray layer with methacrylic resin. Methacrylic resin raw material solution, which does not produce pores at curing, can complete perfect pore sealing.

Abstract: The invention relates to a device for depositing especially, crystalline layers onto one or more, especially, also crystalline substrates in a process chamber using reaction gases which are guided into said process chamber, where they undergo pyrolytic reaction. The device has a heatable support plate wherein at least one substrate holder lies loosely, especially rotationally, with its surface flush with the surroundings. A compensation plate which adjoins the at least one substrate holder, following the contours of the same, is provided on the support plate in order to keep the isothermal profile on the support plate as flat as possible.

Abstract: The invention relates to a device for depositing especially crystalline layers on especially crystalline substrates by means of reaction gases fed to a heated process chamber. Said process chamber is formed by the cavity of an especially multi-part graphite tube arranged in a reactor housing that especially comprises quartz walls. Said reactor housing, in the area of the process chamber, is enclosed by a high-frequency coil and the space between the reactor housing wall and the graphite tube is filled with a graphite foam sleeve. In order to improve heat insulation, the graphite foam sleeve is fully slit. The slot is wider than the maximum thermal elongation of the graphite foam sleeve in the peripheral direction to be expected when the device is heated up to process temperature.

Abstract: The present invention is directed to a semiconductor thermal processing apparatus and a method for thermally cooling a semiconductor substrate. According to one aspect of the present invention, a gas-cooled clamp and associated method is disclosed which provides cooling of a substrate by thermal conduction generally in the free molecular regime. The gas-cooled clamp comprises a clamping plate having a plurality of protrusions that define gaps therebetween, wherein a distance or depth of the gaps are associated with a mean free path of the cooling gas therein. The gas-cooled clamp further comprises a pressure control system operable to control a backside pressure of the cooling gas within the plurality of gaps to thus control a heat transfer coefficient of the cooling gas, wherein the heat transfer coefficient of the cooling gas is primarily a function of the pressure and substantially independent of the gap distance.

Abstract: An electrode structure used in a plasma processing apparatus which performs a predetermined process on an object (W) to be processed by using a plasma in a process chamber (26) in which a vacuum can be formed. An electrode unit (38) has a heater unit (44) therein. A cooling block (40) having a cooling jacket (58) is joined to the electrode unit (38) so as to cool the electrode unit. A heat resistant metal seal member (66A, 66B) seals an electrode-side heat transfer space (62, 64) formed between the electrode unit and the cooling block. Electrode-side heat transfer gas supply means (94) supplies a heat transfer gas to the electrode-side heat transfer space. Accordingly, a sealing characteristic of the electrode-side heat transfer space does not deteriorate even in a high temperature range such as a temperature higher than 200° C. and, for example, a range from 350° C. to 500° C., and the heat transfer gas does not leak.

Abstract: Susceptor designs are provided for controlling damage to wafers, particularly during cold wafer drops-off on a hot susceptor. The designs include axisymmetric grid designs, such that thermal gradients are symmetrical in the circumferential (?) direction and the same traversing any particular radial line. The grids are preferably arcuate and each have the same surface area. In one embodiment an outer zone is asymmetrically designed to induce predictable wafer curling in a saddle shape.

Abstract: The present invention provides an apparatus for supporting a wafer in a semiconductor process. The apparatus includes an electrostatic chuck, a focus ring and a conductive material. The electrostatic chuck has a first fillister in its periphery. When a DC power is applied to the electrostatic chuck, the wafer is attached tightly to the electrostatic chuck by electromagnetic force. The focus ring has a second fillister opposite to the first fillister, and the focus ring is fixed on the periphery of the electrostatic chuck. The conductive material is located below the focus ring, and the conductive material is moving between the first fillister and the second fillister by a drive apparatus. When the conductive material is moving close to the focus ring in semiconductor etching process, it can improve the etching uniformity of the wafer periphery.

Abstract: A heating unit having a heat pipe structure includes a heater and a cooling pipe disposed in an inner space of a holding table. The holding table and the cooling pipe are thermally insulated by a heat-insulating member, so that it is possible to prevent direct heat transfer from the cooling pipe to the holding table. Therefore, it is possible to rapidly perform a cooling processing while keeping the evenness of the temperature distribution of the mounting face and the temperature distribution of the substrate mounted on the mounting face, and consequently to appropriately keep the evenness of the film thickness and the line width of a wiring layer formed on the substrate upon heat processing.

Abstract: A supporting structure is provided, including a ceramic susceptor to be heated and having a mounting face and a back face. A ceramic supporting member is joined with the back face of the susceptor. The ceramic supporting member has an outer wall surface, a joining face joined with the susceptor and an end face opposing the joining face. A curved part is formed between the outer wall surface and back face, and has a radius of curvature R in a range of 4 mm to 25 mm in the longitudinal direction of the ceramic supporting member.

Abstract: A susceptor supporting construction has a susceptor for heating a member to be processed and a supporting member, in which an inner space is arranged, connected to the susceptor. A chamber having an opening is connected to the supporting member, the opening of the chamber is communicated with the inner space of the supporting member, and the inner space of the supporting member is sealed in an airtight manner with respect to an inner space of the chamber. The supporting member further has a tubular main portion, a diameter extending portion arranged at an end portion thereof to which the susceptor is faced, and one or more continuous round portions arranged between the main portion and the diameter extending portion, when viewed by an outer profile of a longitudinal section of the supporting member.

Abstract: A plasma treatment method comprising exhausting a process chamber so as to decompress the process chamber, mounting a wafer on a suscepter, supplying a process gas to the wafer through a shower electrode, applying high frequency power, which has a first frequency f1 lower than an inherent lower ion transit frequencies of the process gas, to the suscepter, and applying high frequency power, which has a second frequency f2 higher than an inherent upper ion transit frequencies of the process gas, whereby a plasma is generated in the process chamber and activated species influence the wafer.

Abstract: A supporting structure of a ceramic susceptor is provided, including a ceramic susceptor to be heated having a mounting face and a back face, and a ceramic supporting member joined with the back face of the susceptor. The supporting member has an outer wall surface, and a continuous and integral curved part formed between the outer wall surface and the back face of the susceptor. The curved part has a radius of curvature “R” in a range of 4 mm to 25 mm in the longitudinal direction of the supporting member, and a minimum wall thickness “t” in a range of 1 mm to 15 mm.

Abstract: A shadow frame and framing system for semiconductor fabrication equipment comprising a rectangular frame having four edges, the edges forming an interior lip with a top surface and an bottom engagement surface; and a cross beam disposed between at least two edges of the frame, the cross beam having a top surface and a bottom engagement surface, the engagement surface of the cross beam configured to be flush with the engagement surface of the lip; wherein one or more of the engagement surfaces are configured to cover metal interconnect bonding areas on a carrier disposed below the frame. The shadow frame is particularly useful in plasma enhanced chemical vapor deposition (PECVD) applications used to make active matrix liquid crystal displays (AMLCDs) and solar cells.

Abstract: A modular lift-pin assembly includes a lift-pin having a distal end, a connector, and an actuator pin. The connector includes an actuator end having a plurality of catch fingers disposed around the actuator end. Each of the plurality of catch fingers includes a lip extending radially inwards. A lift-pin end is coupled to the distal end of the lift-pin, and the actuator pin is coupled to the actuator end of the connector.

Abstract: The present application provides a PECVD reaction chamber for processing semiconductor wafers comprising a susceptor for supporting a semiconductor wafer inside the reaction chamber wherein the susceptor comprises a plurality vertical through-bores, a moving means for moving the susceptor vertically between at least a first position and a second position, wafer-lift pins passing through the through-bores wherein the lower end of each wafer pin is attached to a lift member, and a lift member linked with an elevating mechanism for moving the wafer-lift pins vertically. The disclosed apparatus reduces contamination on the underside of the semiconductor wafer.

Abstract: A ceramic heater system has a ceramic heater base having a substrate-mounting surface formed on the top surface thereof and a heater, buried in the heater base, for heating a substrate. A fluid passage is formed buried in the heater base below where the heater is buried. The heater base is cooled as a fluid whose temperature is lower than the temperature of the heater base is let flow in the fluid passage. A substrate processing apparatus has the ceramic heater system installed in a process chamber whose vacuum state can be maintained, a gas supply mechanism for feeding a gas into the process chamber, and a power supply. The substrate processing apparatus performs a heat treatment, etching and film deposition on a substrate placed in the process chamber.

Abstract: A substrate processing apparatus comprises a heating process chamber in which a heating process is performed for a wafer, a load lock chamber, connected to the heating process chamber, for controlling at least oxygen concentration and pressure, a transferring arm transferring the wafer between the heating process chamber and the load lock chamber, and a gate valve shielding the heating process chamber from the load lock chamber. Thus, an insulation film with high quality can be formed. In addition, the wafer is temporarily placed in the load lock chamber adjacent to the heating process chamber without need to be transferred to another unit. Thus, the transferring time period for the wafer can be shortened. In addition, footprints can be decreased.

Abstract: A work-piece deflection management system including: (a) a first and a second vacuum chambers, each said vacuum chamber having an air-bearing seal circumscribing one of its sides, and (b) a work-piece plate; wherein the air-bearing seals are aligned to face one-another with the work-piece plate respectively there-between, allowing the work-piece to be laterally slid with respect to the air-bearing seals while maintaining a first predefined vacuum level within the first vacuum chamber and maintaining a second predefined vacuum level within the second vacuum chamber.

Abstract: A confinement ring support assembly for coupling together a plurality of confinement rings in a plasma processing chamber. The confinement ring support assembly includes a post having first end and a second end. The post further includes a first lip having an associated first sliding surface, and a second lip having an associated second sliding surface. The first lip is disposed at a first position on the post, the second lip being disposed at a second position at a different arc relative to the first location on the post, the second position being disposed between the first position and the first end along a longitudinal axis of the post. The confinement ring support assembly further includes a first washer configured to move slidably from the first lip past the second lip toward the first end of the post.

Abstract: A cooling stage for a semiconductor substrate and a method for utilizing such cooling stage for cooling of a semiconductor substrate. In the cooling stage, a pedestal that has a substantially planar top surface is equipped with a first plurality of circular grooves concentrically formed in the top surface and a second plurality of linear grooves formed in radial directions emanating from a center of the top surface in fluid communication with the first plurality of circular grooves to allow a cooling fluid to flow therethrough when a semiconductor substrate is positioned on the top surface of the stage.

Abstract: An etch processor for etching a wafer includes a chuck for holding the wafer and a temperature sensor reporting a temperature of the wafer. The chuck includes a heater controlled by a temperature control system. The temperature sensor is operatively coupled to the temperature control system to maintain the temperature of the chuck at a selectable setpoint temperature. A first setpoint temperature and a second setpoint temperature are selected. The wafer is placed on the chuck and set to the first setpoint temperature. The wafer is then processed for a first period of time at the first setpoint temperature and for a second period of time at the second setpoint temperature.

Abstract: A chuck body mounts a substrate within a vacuum chamber. Contiguous portions of the substrate and the chuck body form a heat-transfer interface. An intermediate sealing structure seals the chuck body to the substrate independently of any contact between the chuck body and the substrate and forms a separately pressurizable region within the vacuum chamber. A control system promotes flows of fluid through a periphery of the heat-transfer interface within the separately pressurizable region for controlling fluid pressures and related transfers of heat at the heat-transfer interface according to an overall aim of regulating the substrate temperature.

Abstract: A reactor for growing epitaxial layers includes reaction chamber having a passthrough opening for inserting and removing wafer carriers from the reaction chamber. A reactor also includes a cylindrical shutter located inside the reaction chamber for selectively closing the passthrough opening. The cylindrical shutter is movable between a first position for closing the passthrough opening and a second position for opening the passthrough opening. The cylindrical shutter includes an internal cavity adapted to receive a cooling fluid and tubing for introducing the cooling fluid into the internal cavity. The tubing is permanently secured to the shutter and moves simultaneously therewith. The cylindrical shutter and the internal cavity of the shutter surrounds an outer perimeter of the wafer carrier, thereby minimizing nonuniformity in the temperature and flow field characteristics of the reactant gases.

Abstract: Systems and methods for epitaxial deposition. The reactor includes a hot wall process cavity enclosed by a heater system, a thermal insulation system, and chamber walls. The walls of the process cavity may comprises a material having a substantially similar coefficient thermal expansion as the semiconductor substrate, such as quartz and silicon carbide, and may include an isothermal or near isothermal cavity that may be heated to temperatures as high as 1200 degrees C. Process gases may be injected through a plurality of ports, and are capable of achieving a fine level of distribution control of the gas components, including the film source gas, dopant source gas, and carrier gas. The gas supply system includes additional methods of delivering gas to the process cavity, such as through temperature measurement devices, and through a showerhead.

Abstract: A method and system of holding a substrate to decrease foreign substances on the back surface thereof. The substrate holding system includes a ring-shaped leakage-proof surface having a smooth surface on the specimen table corresponding to the periphery of the substrate, contact holding portions within the periphery of the substrate, and electrostatic attraction means for fixing the substrate by contacting the back surface thereof to the ring-shaped leakage-proof surface and the contact holding portions. The substrate contacts a cooling surface at the ring-shaped leakage-proof surface and the contact holding portion placed on a position inside the ring-shaped leakage-proof surface. The back surface of the substrate and the cooling surface do not contact each other in the large portion of the remaining area.

Abstract: A heating device for controllably heating an article defines a processing chamber to hold the article and includes a housing and an EMF generator. The housing includes a susceptor portion surrounding at least a portion of the processing chamber, and a conductor portion interposed between the susceptor portion and the processing chamber. The EMF generator is operable to induce eddy currents within the susceptor portion such that substantially no eddy currents are induced in the conductor portion. The conductor portion is operative to conduct heat from the susceptor portion to the processing chamber. The heating device may further include a platter and an opening defined in the conductor portion, wherein the opening is interposed between the susceptor portion and the platter.

Abstract: There is provided a vacuum processing apparatus and an exhausting apparatus of the vacuum processing apparatus according to which the auxiliary vacuum pump can be made smaller or eliminated, and hence energy-saving and space-saving can be achieved, and moreover the floor space occupied by the exhausting apparatus can be reduced, and hence the vacuum processing apparatus as a whole can be made smaller in size. A main vacuum pump has an intake port connected to a processing chamber in which an article to be processed is processed in a vacuum atmosphere, to exhaust the processing chamber to a vacuum state. An auxiliary vacuum pump is connected to a discharge port of the main vacuum pump to exhaust the main vacuum pump to a vacuum state. The main vacuum pump is a high back pressure type pump that exhausts the processing chamber to a vacuum state with a predetermined high back pressure value.

Abstract: Improvements in the design of a low mass wafer holder are disclosed. The improvements include the use of peripherally located, integral lips to space a wafer or other substrate above the base plate of the wafer holder. A uniform gap is thus provided between the wafer and the base plate, such as will temper rapid heat exchanges, allow gas to flow between the wafer and wafer holder during wafer pick-up, and keep the wafer holder thermally coupled with the wafer. At the same time, thermal disturbance from lip contact with the wafer is reduced. Gas flow during pick-up can be provided through radial channels in a wafer holder upper surface, or through backside gas passages. A thicker ring is provided at the wafer holder perimeter, and is provided in some embodiments as an independent piece to accommodate stresses accompanying thermal gradients. Self-centering mechanisms are provided to keep the wafer holder centered relative to a spider which is subject to differential thermal expansion.

Abstract: A vacuum plate for a fabricating apparatus of a semiconductor device, the vacuum plate includes: a first vacuum panel having a plurality of exhaust holes, the plurality of exhaust holes having same area and same distance from a center of the first vacuum panel, the plurality of exhaust holes being symmetrical and spaced apart from each other; and a second vacuum panel having a sidewall, a pumping hole and an air-load block, the sidewall being vertically protruded along an edge of the second vacuum panel, the air-load block being vertically protruded and symmetrical, a bottom surface of the first vacuum panel contacting a top surface of the sidewall and a top surface of the air-load block, thereby the first and second vacuum panels being combined.

Abstract: A substrate support is provided that features a lift pin having at least one larger diameter shoulder section that forms a relief region between the lift pin and a guide hole disposed through a substrate support. The shoulder section minimizes contact between the substrate support and lift pin guide hole, thereby reducing pin scratching, particle generation, component wear, and increasing the useful life of the pin. In another embodiment, a flat-bottom tip is provided to promote self-standing of the lift pin, reducing pin tilting or leaning of the lift pin within the guide hole.

Abstract: A ceramic heater improving a uniformity of temperature distribution in a work heating face, wherein a resistance heating body formed on a face of a ceramic substrate opposite to the work heating face thereof is such that the scattering of thickness is within ±50% of an average thickness, and a surface roughness of the resistance heating body is a range of 0.05-100 ?m as Rmax and not more than 50% of the average thickness.

Abstract: A susceptor of an apparatus for manufacturing a semiconductor device includes a first part having a first lift pin hole, a second part combined with the first part and forming a space with the first part, wherein the second part has a second lift pin hole corresponding to the first lift pin hole, a heater disposed in the space, wherein the heater has a third lift pin hole corresponding to the first and second lift pin holes, a lift pin tube inserted in the first, second and third lift pin holes, wherein the lift pin tube is combined with the first and second part thereby preventing air from going into the space, and a lift pin passing through the lift pin tube.

Abstract: A supporting structure for attaching a ceramic susceptor into a processing chamber is provided. The ceramic susceptor is used for placing and heating an article to be processed. The supporting structure has one or more supporting projections integrally provided on a back face of the ceramic susceptor and one or more supporting members mounted to the processing chamber and separated from the supporting projections. At least a part of the supporting member is made from a heat-insulating material and the supporting projection is attached to the supporting member by mechanical means.

Abstract: A surface treating holder includes a wire which is coiled at distances in such a manner that it is formed as a spring-like tubular structure having spiral-line faces at opposite ends thereof, so that works are accommodated in the tubular structure. A process for surface-treating a pluarlity of works accommodates the works in the holder, and surface treating the works in the holder while being rotated about an axis of the works.

Abstract: Disclosed are a method and an apparatus for processing a wafer in manufacturing a semiconductor device and a method and an apparatus for etching a material formed on the wafer, wherein first and second cooling parts adjust an ambient temperature near a plurality of wafers to a first temperature, the wafers are processed by introducing a reaction gas at the first temperature, then, a heating part rapidly raises the temperature of the atmosphere near the wafers from the first temperature to the second temperature to partially separate by-products produced during the processing, the second temperature is maintained to separate most of the by-products from the wafers, and the processing steps are implemented in-situ within the same space. Accordingly, a native oxide layer formed on several wafers can be etched and the reaction by-products can be removed in-situ in the same chamber so productivity is improved.

Abstract: A system and method for controlling temperature in a workpiece chuck are described. A fluid circulation system circulates a temperature control fluid, such as an engineered HFE fluid, through te workpiece chuck. A fluid recovery system coupled to the fluid circulation system recovers a portion of the temperature control fluid from the fluid circulation system by circulating a gas through the fluid circulation system including fluid tubes and fluid passages in the chuck. The gas, which can be air, carries a portion of residual or excess fluid through the fluid circulation system as it is circulated. The residual fluid is carried back to a reservoir such that it can continue to be used to control temperature of the chuck. Where gas and temperature control fluid vapors are displaced from the reservoir, they are routed through a suction line heat exchanger which condenses the vapor. The gas and condensed fluid are separated in a fluid separator.

Abstract: By indirectly monitoring a warping amount of a substrate, it is possible to examine causes easily when substrate processing such as deposition is performed with nonuniform in-plane temperature of the substrate and a defect in a substrate characteristic, for example in uniformity of a film thickness, is caused. In a substrate processing apparatus for processing a substrate, a substrate holding body for holding the substrate on its surface and a resistance heater for heating the substrate through the substrate holding body are provided. Radiation thermometers for measuring temperature of the substrate holding body, which has a correlation with a warping amount of the substrate, from its rear surface side are provided to the resistance heater. The substrate holding body is provided to be rotatable with respect to the radiation thermometers so that temperature information of the substrate holding body in a circumferential direction can be obtained.

Abstract: In one embodiment, a wafer processing system has a loading station, a process module, and a load lock directly adjacent to the process module. The load lock has a small volume and can include integrated heating/cooling units. The load lock also has a wafer transfer mechanism for placing a wafer directly to the process module. The wafer processing system does not employ a transfer chamber to transport wafers between the load lock and the process module. Instead, a wafer is directly transferred from the load lock to the process module using the wafer transfer mechanism. Not requiring a transfer chamber not only improves the throughput of the wafer processing system, but also lowers its complexity and component count as well. The throughput of the wafer processing system is also improved by using a small volume load lock with integrated cooling/heating units.

Abstract: A heater block installed within a chamber in the chemical vapor deposition (CVD) apparatus used to manufacture a semiconductor device is described. The heater block includes a catalyst spraying device comprising a support section, an upper plate coupled to an upper portion of the support section and having a projection section at an edge of the upper plate, and a heater installed at prominences and depressions of the upper plate formed of the projection section and constructed so that a wafer can be located on an upper portion of the upper plate. Catalyst is supplied through passages formed within the support section and the upper plate and is uniformly sprayed onto a surface of the wafer via a plurality of spray holes formed at the projection section.

Abstract: The present invention satisfies this and other needs by providing a novel wafer heater, which isolates a heater element from the vacuum environment. Thus, a non-aluminum heater element can be used in a wafer heater of the current invention. The novel wafer heater of the invention has an interface with high vacuum integrity, minimal dead space and reduced potential for vacuum contamination.

Abstract: A corrosion resistant component of semiconductor processing equipment such as a plasma chamber comprises a cerium oxide containing ceramic material as an outermost surface of the component. The cerium oxide containing ceramic material comprises one or more cerium oxides as the single largest constituent thereof. The component can be made entirely of the cerium oxide containing ceramic material or, alternatively, the cerium oxide containing ceramic can be provided as a layer on a substrate such as aluminum or an aluminum alloy, a ceramic material, stainless steel, or a refractory metal. The cerium oxide containing ceramic layer can be provided as a coating by a technique such as plasma spraying. One or more intermediate layers may be provided between the component and the cerium oxide containing ceramic coating.

Abstract: A compensation ring 31 disposed to surround a periphery of a wafer W on a susceptor 30 is concentrically divided into an inside first compensation ring member 32 and an outside second compensation ring member 33. A width of a first compensation ring member 32 is made such thin as one to three times mean free path of treatment gas molecules, thereby suppressing heat transfer between a susceptor 30 and a second compensation ring member 33. A base of a second compensation ring member, through a layer of conductive silicone rubber 34, is made to come into an intimate contact with an upper surface of a susceptor 30, thus helping to cool.