Abstract: A chuck for supporting a wafer and maintaining a constant background temperature across the wafer during laser thermal processing (LTP) is disclosed. The chuck includes a heat sink and a thermal mass in the form of a heater module. The heater module is in thermal communication with the heat sink, but is physically separated therefrom by a thermal insulator layer. The thermal insulator maintains a substantially constant power loss at least equal to the maximum power delivered by the laser, less that lost by radiation and convection. A top plate is arranged atop the heater module, supports the wafer to be processed, and provides a contamination barrier. The heater module is coupled to a power supply that is adapted to provide varying amounts of power to the heater module to maintain the heater module at the constant background temperature even when the wafer experiences a spatially and temporally varying heat load from an LTP laser beam.

Abstract: A substrate mounting table includes a mounting table main body, a mounting unit provided at an upper portion of the mounting table main body, a heat source transferring a (cold) heat to the upper portion of the mounting table main body, and a heat transfer control part. The heat transfer control part includes a cavity portion provided in the mounting table main body to correspond to the mounted substrate, and a solid member filled in the cavity portion and having pores communicating with one another. The heat transfer control part controls a heat transfer level from the heat source by supplying or exhausting a heat transfer gas to or from the cavity portion. A controller controls the supplying and the exhausting of the heat transfer gas to and from the cavity portion by a heat transfer gas supply unit and a heat transfer gas exhaust unit, respectively.

Abstract: A dry non-plasma treatment system and method for removing oxide material is described. The treatment system is configured to provide chemical treatment of one or more substrates, wherein each substrate is exposed to a gaseous chemistry, including HF and optionally NH3, under controlled conditions including surface temperature and gas pressure. Furthermore, the treatment system is configured to provide thermal treatment of each substrate, wherein each substrate is thermally treated to remove the chemically treated surfaces on each substrate.

Abstract: A substrate support useful in a reaction chamber of a plasma processing apparatus is provided. The substrate support comprises a base member and a heat transfer member overlying the base member. The heat transfer member has multiple zones to individually heat and cool each zone of the heat transfer member. An electrostatic chuck overlies the heat transfer member. The electrostatic chuck has a support surface for supporting a substrate in a reaction chamber of the plasma processing apparatus. A source of cold liquid and a source of hot liquid are in fluid communication with flow passages in each zone. A valve arrangement is operable to independently control temperature of the liquid by adjusting a mixing ratio of the hot liquid to the cold liquid circulating in the flow passages. In another embodiment, heating elements along a supply line and transfer lines heat a liquid from a liquid source before circulating in the flow passages.

Abstract: A plasma processing apparatus includes a first high frequency power for outputting a first high frequency, electrically connected to a first electrode disposed inside a depressurizable processing chamber; a heater power supply electrically connected to a heating element provided in the first electrode via filter circuits for reducing noise of the first high frequency. The plasma processing apparatus further includes air core primary inductors provided in primary stages of the filter circuits when seen from the heating element; and a grounded conductive case for surrounding or accommodating the primary inductors.

Abstract: A susceptor structure capable of discharging the atmosphere containing dopant species and filling a wafer pocket, without causing a large quantity of a raw material gas to flow from the front surface side of a susceptor to under the susceptor. The susceptor having an approximately round disk shape and having a concave wafer pocket on the front surface thereof for accommodating a wafer, comprises a gas inlet notch passing through from a side surface or a rear surface of the susceptor to the wafer pocket, and a gas discharge notch passing through from the wafer pocket to the side surface or the rear surface of the susceptor. A carrier gas is introduced from the gas inlet notch of the susceptor into the wafer pocket, as shown by arrow b and the gas present inside the wafer pocket is discharged from the gas discharge notch, as shown by arrow c, by using the rotation of the susceptor during epitaxial film growth.

Abstract: A film formation system 10 has a processing chamber 15 bounded by sidewalls 18 and a top cover 11. In one embodiment, the top cover 11 has a reflective surface 13 for reflecting radiant energy back onto a substrate 19, pyrometers 405 for measuring the temperature of the substrate 19 across a number of zones, and at least one emissometer 410 for measuring the actual emissivity of the substrate 19. In another embodiment, a radiant heating system 313 is disposed under the substrate support 16. The temperature of the substrate 19 is obtained from pyrometric data from the pyrometers 405, and the emissometer 410.

Abstract: There is provided a susceptor for semiconductor manufacturing apparatus that offers excellent thermal uniformity of a substrate being secured by vacuum chucking. A susceptor for semiconductor manufacturing apparatus includes an aluminum-nitride support member in which heater electrodes are buried to heat the substrate, a recessed wafer pocket formed on an upper surface of the support member, a through hole formed in the wafer pocket, and a seal band that supports the substrate at a periphery of the wafer pocket, and on an upper surface of the seal band, a plurality of gas channels are formed to allow gas in a chamber to pass through the gas channels from an outer circumference of the seal band toward the wafer pocket.

Abstract: A susceptor device comprises a base body, an electrostatic absorbing inner electrode which is disposed on a bottom surface of the base body, a power supplying terminal, an insulating sprayed layer which coats the electrostatic absorbing inner electrode and a connecting section for the power supplying terminal and the electrostatic absorbing inner electrode, and a temperature controlling section. The insulating sprayed layer and the temperature controlling section are attached together unitarily via the bonding agent layer. The flange of the base body fits to a notched section of the temperature controlling section such that the electrostatic absorbing inner electrode, insulating sprayed layer, and the bonding agent layer should be sealed from thereoutside. It is possible to form a thin supporting plate and improve controllability for temperature on the plate sample and transparency for the plasma.

Abstract: A substrate processing apparatus includes a chamber having a reaction space therein, a substrate seating member disposed in the reaction space of the chamber to seat a substrate thereon, an induction heating unit to heat the substrate seating member, and at least one altitude adjusting unit to selectively adjust the altitude of the induction heating unit at the outside of the chamber according to a temperature adjusting region of the substrate seating member. Therefore, it is possible to constantly control a temperature of the substrate seating member by adjusting the distance length between the substrate seating member and the induction heating unit at the outside of the chamber.

Abstract: The embodiments of the present invention generally relate to a plasma reactor. In one embodiment, a plasma reactor includes a substrate support is disposed in a vacuum chamber body and coupled to bias power generator. An RF electrode is disposed above the substrate support and coupled to a very high frequency power generator. A conductive annular ring is disposed on the substrate support and has a lower outer wall, an upper outer wall and an inner wall. A step is extends upward and outward from a lower outer wall and inward and downward from the upper outer wall. The inner wall disposed opposite the upper and lower outer wall. In other embodiments, the annular ring may be fabricated from a conductive material, such as silicon carbide and aluminum.

Abstract: A substrate ring assembly is provided for a substrate support having a peripheral edge. The assembly has an annular band having an inner perimeter that surrounds and at least partially covers the peripheral edge of the substrate support. The assembly also has a clamp to secure the annular band to the peripheral edge of the substrate support.

Abstract: It is to provide a vapor phase growth apparatus which can perform vapor phase growth of a thin film having a good uniformity throughout a surface of a wafer. The vapor phase growth apparatus includes at least a sealable reactor, a wafer containing member (wafer holder) installed within the reactor and having a wafer mounting portion (pocket hole) on a surface thereof for holding a wafer, a gas supply member (gas inlet pipe) for supplying raw material gas towards the wafer, a heating member (heater) for heating the wafer, and a heat uniformizing member (susceptor) for holding the wafer containing member and uniformizing heat from the heating member, wherein raw material gas is supplied into the reactor in a high temperature environment while heating the wafer by using the heating member via the heat uniformizing member and the wafer containing member, to form a film grown on a surface of the wafer, and wherein a recess portion depressed in a dome shape is formed at a back side of the wafer containing member.

Abstract: Apparatus for holding semiconductor wafers during semiconductor manufacturing processes are disclosed. In one embodiment, the apparatus comprises a heat-conductive layer disposed on a supporting base. The apparatus also comprises a plurality of holes formed through the heat-conductive layer and the supporting base. The apparatus further comprises a plurality of heat-conductive lift pins that extend through the holes over the heat-conductive layer at the top end, and make a direct contact with a wafer substrate. The heat-conductive layer and the lift pins are connected to a heating circuit.

Abstract: A heating means is disclosed which comprises a reflector plate composed of an opaque quartz and a quartz tube welded to the surface of the reflector plate. A carbon wire which generates heat when a current is applied is inserted in the quartz tube.

Abstract: A wafer support system comprising a susceptor having top and bottom sections and gas flow passages therethrough. One or more spacers projecting from a recess formed in the top section of the susceptor support a wafer in spaced relationship with respect to the recess. A sweep gas is introduced to the bottom section of the susceptor and travels through the gas flow passages to exit in at least one circular array of outlets in the recess and underneath the spaced wafer. The sweep gas travels radially outward between the susceptor and wafer to prevent back-side contamination of the wafer. The gas is delivered through a hollow drive shaft and into a multi-armed susceptor support underneath the susceptor. The support arms conduct the sweep gas from the drive shaft to the gas passages in the susceptor. The gas passages are arranged to heat the sweep gas prior to delivery underneath the wafer.

Abstract: A focus ring heat transfer method improves heat transfer of a focus ring arranged in an outer peripheral portion of a mounting surface of a mounting table adapted to mount a target substrate in a chamber. The method includes steps of: disposing a heat transfer sheet between the focus ring and the mounting table; and vacuum-evacuating the chamber prior to processing the target substrate and then restoring the pressure the inside of the chamber to an atmospheric pressure or a light vacuum pressure. Therefore, air present in a fine gap between the heat transfer sheet and the mounting surface is removed to allow the heat transfer sheet to adhere to the mounting surface.

Abstract: A processing system and method for chemical oxide removal, wherein the processing system includes a process chamber having a lower chamber portion configured to chemically treat a substrate and an upper chamber portion configured to thermally treat the substrate, and a substrate lifting assembly configured to transport the substrate between the lower chamber portion and the upper chamber portion. The lower chamber portion includes a chemical treatment environment that provides a temperature controlled substrate holder for supporting the substrate for chemical treatment. The substrate is exposed to a gaseous chemistry, such as HF/NH3, under controlled conditions including surface temperature and gas pressure. The upper chamber portion includes a thermal treatment environment that provides a heating assembly configured to elevate the temperature of the substrate.

Abstract: A substrate holder which has an electrostatic chuck on a substrate holding side of a holder main body and electrostatically adsorbs a substrate includes: a heating unit which is built in the electrostatic chuck and heats the substrate; a circulation medium distribution path which is formed inside the holder main body and connected to a circulation medium supplying unit which circulates and supplies a circulation medium; a heat transference varying unit which is formed by sealing a heat transfer gas in a gap between the holder main body and the electrostatic chuck and connected to a heat transfer gas supply system which can control a sealing pressure; and a gas sealing unit which is formed by sealing a heat transfer gas in a gap between the electrostatic chuck and the substrate and connected to the heating transfer gas supply system.

Abstract: A substrate support system comprises a substrate holder having a plurality of passages extending between top and bottom surfaces thereof. The substrate holder supports a peripheral portion of the substrate backside so that a thin gap is formed between the substrate and the substrate holder. A hollow support member provides support to an underside of, and is configured to convey gas upward into one or more of the passages of, the substrate holder. The upwardly conveyed gas flows into the gap between the substrate and the substrate holder. Depending upon the embodiment, the gas then flows either outward and upward around the substrate edge (to inhibit backside deposition of reactant gases above the substrate) or downward through passages of the substrate holder, if any, that do not lead back into the hollow support member (to inhibit autodoping by sweeping out-diffused dopant atoms away from the substrate backside).

Abstract: A vapor deposition reactor and associated method are disclosed that increase the lifetime and productivity of a filament-based resistive-heated vapor deposition system. The reactor and method provide for heating the filament while permitting the filament to move as it expands under the effect of increasing temperature while limiting the expanding movement of the filament to an amount that prevents the expanding movement of the filament from creating undesired contact with any portions of the reactor.

Abstract: Disclosed is a substrate processing apparatus which comprises reaction tubes (3,4) for processing multiple substrates (27), a heater (5) for heating the substrates, and gas introducing nozzles (6,7,8,9,10) for supplying a gas into the reaction tubes. Each of the gas introducing nozzles (6,7,8,9) is structured so that at least the channel cross section of a portion facing the heater (5) is larger than those of the other portions.

Abstract: The object of the present invention is to prevent damage due to thermal stress induced into a substrate holding table in a substrate holding structure for holding a substrate to be processed. In the substrate holding structure having the substrate holding table arranged at the top of a support column, a flanged part is defined by an inner circumferential surface and an outer circumferential surface at a joint between the support column and the substrate holding table. The inner circumferential surface is formed of an inclined surface, which is inclined such that the inner diameter of the flanged part successively increases as approaching the lower surface of the substrate holding table. On the lower surface of the substrate holding table to which the flanged part is joined, a U-shaped groove is formed so as to correspond to the outer circumferential surface of the flanged part.

Abstract: The embodiments of the present invention generally relate to annular ring used in a plasma processing chamber. In one embodiment, the annular ring includes an inner wall, an upper outer wall, a lower outer wall, a step defined between the upper and lower outer wall, a top surface and a bottom wall. The step is formed upward and outward from the lower outer wall and inward and downward from the upper outer wall. The annular ring may be fabricated from a conductive material, such as silicon carbide and aluminum.

Abstract: A tubular electrode (215) and a tubular magnet (216) are installed on an external section of a processing furnace (202) for an MMT device. A susceptor (217) for holding a wafer (200) is installed inside a processing chamber (201) of the processing furnace. A gate valve (244) for conveying the wafer into and out of the processing chamber; and a shower head (236) for spraying processing gas in a shower onto the wafer, are installed inside the processing furnace. A high frequency electrode (2) and a heater (3) are installed inside the susceptor (217) with a clearance between them and the walls forming the space. The clearances formed between the walls forming the space in the susceptor and the high frequency electrode and the heater prevent damage to the high frequency electrode and the heater even if a thermal expansion differential occurs between the high frequency electrode, the heater and the susceptor.

Abstract: An electrostatic chuck module for a semiconductor manufacturing apparatus which can be cooled with water and in which there is no penetration leak includes an electrostatic chuck plate of alumina and a cooling plate which is bonded to the electrostatic chuck, wherein the cooling plate is formed by forging processing to a Cu-based composite material comprising Cu—W, Cu—W—Ni, Cu—Mo, or Cu—Mo—Ni. By adjusting the ratio of Cu and Ni having a great thermal expansion coefficient and W and Mo having a small thermal expansion coefficient in a Cu-based composite material, it is possible to obtain a highly thermally conductive material having the same thermal expansion coefficient as an alumina material for an electrostatic chuck. However, since such a composite material has a penetration leak, it cannot be used in a vacuum system. According to the present invention, by conducting forging processing, a penetration leak can be prevented.

Abstract: An apparatus and method to position a wafer onto a wafer holder and to maintain a uniform wafer temperature is disclosed. The wafer holder or susceptor comprises a recess or pocket whose surface includes a grid containing a plurality of grid grooves that separate protrusions. A plurality of gas passages is provided in the susceptor to enable an upward flow of gas toward the bottom surface of the substrate. During drop-off of the substrate, a cushion gas flow is provided to substantially slow the rate of descent of the substrate onto the susceptor and to gradually heat the substrate before it makes contact with the susceptor. Optionally, a trickle gas flow may be provided through the aforementioned passages during processing of the substrate to prevent deposition of reactant gases onto the bottom surface of the substrate.

Abstract: A method and an apparatus for forming a structure on a component made of a material composed of silicon oxide, especially of silicate glass, glass ceramic or quartz, wherein in accordance with the process at least a first surface of the component a partial removal of the material by plasma etching takes place and during the plasma etching at least at the surface to be etched a substrate temperature is established which is substantially greater than 90° C. but less than the softening temperature of the material. The apparatus is equipped for this purpose with a heater for generating the substrate temperature.

Abstract: A substrate mounting table for mounting a substrate in a substrate processing apparatus, includes a table body having a substrate mounting surface. An annular peripheral ridge portion is formed on the substrate mounting surface of the table body. The annular peripheral ridge portion makes contact with a peripheral edge portion of the substrate and forms a closed space for circulation of a heat transfer gas below the substrate, when the substrate is mounted on the substrate mounting surface of the table body. The table body has a heat transfer gas inlet port formed in a peripheral edge region of the substrate mounting surface, a heat transfer gas outlet port formed in a central region of the substrate mounting surface, and a flow path formed on the substrate mounting surface for forming a conductance C when the heat transfer gas flows from the inlet port to the outlet port.

Abstract: A plasma processing apparatus for performing a plasma process on a target substrate includes a process container configured to accommodate the target substrate and to reduce pressure therein. A first electrode is disposed within the process container. A supply system is configured to supply a process gas into the process container. An electric field formation system is configured to form an RF electric field within the process container so as to generate plasma of the process gas. A number of protrusions are discretely disposed on a main surface of the first electrode and protrude toward a space where the plasma is generated.

Abstract: In one embodiment, the invention is a guard ring for reducing particle entrapment along a moveable shaft of a substrate support. In one embodiment, the guard ring comprises a substantially annular guard ring positioned within a step formed in a sleeve that circumscribes the shaft. The guard ring is positioned to substantially seal a gap separating the shaft from the sleeve, so that the amount of particles and foreign matter that travel within or become trapped in the gap is substantially reduced. In another embodiment, a guard ring comprises a base portion having an inner perimeter and an outer perimeter, a first flange coupled to the inner perimeter, a second flange coupled to the outer perimeter, and a continuous channel separating the first flange from the second flange. The first flange is adapted to function as a spring that accommodates displacement of the shaft.

Abstract: A focus ring configured to be coupled to a substrate holder comprises a first surface exposed to a process; a second surface, opposite the first surface, for coupling to an upper surface of the substrate holder; an inner radial edge for facing a periphery of a substrate; and an outer radial edge. The second surface further comprises one or more contact features, each of which is configured to mate with one or more receiving features formed within the upper surface of the substrate holder. The focus ring can further comprise a clamping feature for mechanically clamping the focus ring to the substrate holder. Furthermore, a gas can be supplied to the contact space residing between the one or more contact features on the focus ring and the one or more receiving features on the substrate holder.

Abstract: A plasma processing member includes a ceramic base, a plasma generating electrode embedded in the ceramic base, and an electrode power supply member connected to the plasma generating electrode. The impedance of the plasma processing member when plasma is generated using high frequency power at a frequency higher than 13.56 MHz is adjusted to 25? or less.

Abstract: An improved wafer holder design is described which has manufacturing and performance advantages over present state-of-the-art holders used in various wafer processing applications. The new wafer holder design incorporates a series of short radial grooves. The grooves extend from the base of a circular channel, which runs along the outside diameter of the substrate wafer recess, to a fixed radial location which varies based on wafer size and thickness. The grooves provide a slight overlap with the wafer to facilitate the free exchange of gases beneath the wafer necessary for wafer loading and unloading operations. The short length of the radial grooves make the wafer holder easier to manufacture and offer more robust performance compared to the present state-of-the-art holders.

Abstract: A thermal head has heating elements that can be selectively driven independently from one another during a driving operation to directly heat, and thereby thermally activate, regions of a heat-sensitive adhesive layer of a heat-sensitive adhesive sheet while the heat-sensitive adhesive sheet is moved relative to the thermal head with the heating elements disposed in opposing relation to the respective regions of the heat-sensitive adhesive layer.

Abstract: Provided is a plasma processing apparatus capable of easily processing a top surface of a mounting table to have a smooth shape, and also capable of preventing a temperature of a peripheral portion of a substrate from decreasing. A plasma processing apparatus 5 processes a substrate W in a processing vessel 20 by converting a processing gas, which is supplied into the processing vessel 20, into plasma, wherein a mounting table 21 for mounting the substrate W on a top surface thereof is installed in the processing vessel 20, and positioning pins 25 for positioning a peripheral portion of the substrate W are installed to be protruded in plural locations on the top surface of the mounting table 21, and the positioning pins 25 are inserted into recess portions 26 formed in the top surface of the mounting table 21.

Abstract: A plasma processing apparatus is provided that includes a heater-built-in electrostatic chuck, prevents a direct-current potential difference from being made in the plane of a wafer during plasma processing, and performs plasma processing while controlling the temperature of the wafer with good responsiveness without damaging a semiconductor device. The heater-built-in electrostatic chuck of the plasma processing apparatus has a structure in which an insulator, two heaters, an insulator, two electrostatic chuck electrodes having approximately identical areas, and a dielectric film are laminated in ascending order on a conductive base material to which a bias voltage is to be applied. The heaters have approximately identical areas, and are disposed below the two electrostatic chuck electrodes, respectively. Power is provided to the heaters via a low-path filter and a coaxial cable.

Abstract: A body having a junction contains a ceramics member including alumina in which an inner electrode is embedded, having a bore region extending from a surface to the inner electrode, a surface of a bottom surface of the bore region being made rough, and a terminal hole extending to the inner electrode being provided in a part of the bottom surface; a conductive terminal embedded in the terminal hole, a bottom surface is in contact with the inner electrode, and a top surface is exposed at a horizontal level of the bottom surface of the bore region; a solder junction layer contacting with the bottom surface of the bore region including the top surface; and a conductive connection member so that a lower end surface is in contact with the solder junction layer, a lower portion is inserted into the bore region.

Abstract: A pedestal assembly and method for controlling temperature of a substrate during processing is provided. In one embodiment, method for controlling a substrate temperature during processing includes placing a substrate on a substrate pedestal assembly in a vacuum processing chamber, controlling a temperature of the substrate pedestal assembly by flowing a heat transfer fluid through a radial flowpath within the substrate pedestal assembly, the radial flowpath including both radially inward and radially outward portions, and plasma processing the substrate on the temperature controlled substrate pedestal assembly. In another embodiment, plasma processing may be at least one of a plasma treatment, a chemical vapor deposition process, a physical vapor deposition process, an ion implantation process or an etch process, among others.

Abstract: A method and apparatus for correcting overlay errors in a lithography system. During lithographic exposure, features being exposed on the wafer need to overlay existing features on the wafer. Overlay is a critical performance parameter of lithography tools. The wafer is locally heated during exposure. Thermal expansion causes stress between the wafer and the wafer table, which will cause the wafer to slip if it exceeds the local frictional force. To increase the amount of expansion allowed before slipping occurs, the wafer chuck is uniformly expanded after the wafer has been loaded. This creates an initial stress between the wafer and the wafer table. As the wafer expands due to heating during exposure, the expansion first acts to relieve the initial stress before causing an opposite stress from thermal expansion. The wafer may be also be heated prior to attachment to the wafer chuck, creating the initial stress as the wafer cools.

Abstract: Disclosed herein is a plasma processing apparatus, which generates plasma within a vacuum chamber to process semiconductor substrates using the plasma. The apparatus comprises a substrate mounting table, an outer lifting bar, and a baffle. The outer lifting bar comprises a driving shaft, and a substrate supporting member coupled perpendicular to an upper end of the driving shaft. The baffle comprises a baffle plate coupled to the upper end of the driving shaft, and a shielding portion coupled to a lower surface of the baffle plate. The substrate supporting member is a foldable substrate supporting member. The baffle and the substrate supporting member are driven up and down at the same time by the driving shaft. As a result, it is possible to protect the substrate supporting member from plasma, and to prevent interference between the baffle and the outer lifting bar during operation of the plasma processing apparatus.

Abstract: An apparatus for forming a metal film, including a reaction vessel for housing a substrate, a precursor feeding device for bubbling a carrier gas through a liquid organometallic complex, vaporizing the organometallic complex, producing a precursor from the vaporized organometallic complex, and feeding the precursor into the reaction vessel, a rotating magnetic field generator for creating a rotating magnetic field in a space above the substrate, and a second plasma generator for generating a plasma from a reducing gas fed into the reaction vessel.

Abstract: A plasma processing apparatus includes a processing container for receiving a substrate to be processed and processing the substrate by a plasma of a processing gas, a substrate mounting table, installed in the processing container, for mounting the substrate thereon, and a gas supplying unit for supplying the processing gas into the processing container. Here, the substrate mounting table includes a mounting table main body formed of an insulator component. Here, an electrode is embedded inside the mounting table main body, a high frequency power supply for supplying a high frequency power is connected to the electrode, and one or more exposed electrodes are installed to be exposed toward the outside of the mounting table main body and electrically connected to the electrode in the mounting table main body.

Abstract: A substrate supporting apparatus includes a plate member of an aluminum alloy having a flat upper surface, bottomed pits formed in the plate member, and spacer members held in the pits, individually. The spacer members are sapphire spheres. The diameter of each spacer member is a little smaller than that of each pit. The upper end of each spacer member projects from the upper surface of the plate member. A spot facing is formed in a region that includes the open edge portion of the pit. A bending portion which is obtained by plastically deforming the open edge portion of the pit toward the spacer member is formed on a bottom surface of the spot facing. A V-shaped groove is formed behind the bending portion.

Abstract: A method of tuning the thermal conductivity of an electrostatic chuck (ESC) support assembly comprises measuring the temperature at a plurality of sites on a support assembly surface in which each site is associated with a given cell, determining from the measurements any fractional reduction in area suggested for each cell, and removing material from the support assembly surface within each cell in accordance with the suggested fractional reduction in order to decrease thermal conductivity in that cell. The material removal can result in an improvement to the equilibrium temperature uniformity of the electrostatic chuck support assembly at the chuck surface of an electrostatic chuck bonded to the support assembly surface, or can result in an equilibrium temperature profile of the ESC support assembly which approaches or achieves a target equilibrium temperature profile.

Abstract: A plasma processing apparatus 1, in which a substrate W is mounted on a mounting table 11 in a processing chamber 10 and processing gas supplied in the processing chamber 10 is made into plasma to a perform plasma treatment on the substrate W, wherein the mounting table 11 has a mounting table body 12 having a temperature adjusted to be a predetermined level, and an electrostatic chuck 13 disposed on an upper portion of the mounting table body 12 and adsorbing the substrate W thereon; a first heat transfer gas diffusion region 47 is formed at a center of an upper surface of the electrostatic chuck 13 and a second heat transfer gas diffusion region 48 is formed at a circumferential edge of the upper surface of the electrostatic chuck 13; a first heat transfer gas supply unit 51 supplying heat transfer gas to the first heat transfer gas diffusion region 47 and a second heat transfer gas supply unit 52 supplying heat transfer gas to the second heat transfer gas diffusion region 48 are included; and a volume rati

Abstract: A wafer holder for supporting a wafer within a CVD processing chamber includes a vertically moveable lift ring configured to support the bottom peripheral surface of the wafer, and an inner plug having a top flat surface configured to support the wafer during wafer processing. The lift ring has a central aperture configured to closely surround the inner plug. When a wafer is to be loaded onto the wafer holder, the lift ring is elevated above the inner plug. The wafer is loaded onto the lift ring in the elevated position. Then, the lift ring is maintained in the elevated position for a time period sufficient to allow the wafer temperature to rise to a level that is sufficient to significantly reduce or even substantially prevent thermal shock to the wafer when the wafer is brought into contact with the inner plug. The lift ring is then lowered into surrounding engagement with the inner plug. This is the wafer processing position of the wafer holder.

Abstract: In many processes used in fabricating semiconductors the wafer is seated on the top surface of a pedestal and heated in a high energy process step, such as plasma etching. The pedestal, chuck or platen may be cooling but the wafer gradually heats until the process can no longer continue. Where large, e.g. 300 mm diameter, wafers are being processed the temperature level across the wafer is difficult to maintain substantially constant. In this system and method the lateral temperature distribution is equalized by a heat sink structure in a chamber immediately under the wafer support on top of the pedestal. A number of spatially distributed wicking posts extend downwardly from a layer of wicking material across the top of the chamber, into a pool of a vaporizable liquid. At hot spots, vaporized liquid is generated and transported to adjacent condensation posts extending up from the liquid. The system thus passively extracts heat to equalize temperatures while recirculating liquid and assuring adequate supply.

Abstract: A plasma processing apparatus includes a vacuum chamber, a processing chamber housed in the vacuum chamber, and a sample stage located in the processing chamber, for supporting on its upper surface a disk-like sample to be processed, wherein plural disk-like samples are continuously processed with plasma generated in the processing chamber and wherein during the idling time between the successive processes the temperature of the sample stage is adjusted to a predetermined value higher than the temperature at which the samples are processed.

Abstract: A reactor for heat treatment of a substrate having a process chamber within a substrate enclosing structure, and a support structure configured to position a substrate at a predetermined spacing between the upper part and the bottom part within the process chamber during processing. Streams of gas may lift the substrate from the support structure so that the substrate floats. A plurality of heating elements is associated with at least one of the upper part and the bottom part and are arranged to define heating zones. A controller controls the heating elements individually so that each heating zone is configured to have a predetermined temperature determined by the controller. The heating zones provide for a non-uniform heating laterally across the substrate.