Abstract: A sputtering apparatus for processing large area substrates is provided. By introducing gas across the entire target surface, a uniform composition film may be formed on the substrate. When the gas is introduced merely at the perimeter, the gas distribution is not uniform. By providing a gas introduction tube across the processing area, the reactive gas will uniformly distribute to the whole target. Also, providing the gas tube with multiple inner tubes provides a quick, effective gas dispersion capability.

Abstract: A device housing is provided. The device housing includes a substrate, and an anti-fingerprint film formed on the substrate. The anti-fingerprint film is a metal-nitrogen-oxygen compound coating. A method for making the device housing is also described there.

Abstract: Methods are generally provided of sputtering a cadmium sulfide layer on a substrate. The cadmium sulfide layer can be sputtered on a substrate from a mixed target including cadmium, sulfur, and oxygen. The cadmium sulfide layer can be used in methods of forming cadmium telluride thin film photovoltaic devices. Mixed targets including cadmium sulfide and cadmium oxide are also generally provided.

Abstract: A tantalum nitride film-forming method comprises the steps of introducing, into a vacuum chamber, a raw gas consisting of a coordination compound constituted by elemental Ta having a coordinated ligand represented by the general formula: N?(R,R?) (in the formula, R and R? may be the same or different and each represents an alkyl group having 1 to 6 carbon atoms) to thus adsorb the gas on a substrate; then introducing an NH3 gas and then activated H radicals derived from a reactant gas into a vacuum chamber to thus remove the R(R?) groups bonded to the nitrogen atom present in the reaction product through cleavage, and to thus form a tantalum nitride film rich in tantalum atoms. The resulting tantalum nitride film has a low resistance, low contents of C and N atoms, and a high compositional ratio: Ta/N, can ensure sufficiently high adherence to the distributing wire-forming film and can thus be useful as a barrier film.

Abstract: Disclosed is a method for the low cost manufacturing a plurality of rigid sputtered magnetic media disks of one or more sizes from a rigid sheet, in which one or more initial steps of preparing the media are performed while the media is in sheet form. The individual disks are then removed from the sheet, and final processing is performed individually on the disks.

Abstract: A fabrication method of crystallized transparent conducting oxides (TCOs) on a self-assembled organic layer modified substrate is provided and said method includes steps of: providing a substrate having a surface; processing the surface of the substrate by an organic molecular solution, so as to form a self-assembled organic layer on the surface of the substrate; and forming a transparent conducting oxide (TCO) layer on the self-assembled organic layer at a lower temperature below 300° C. The self-assembled organic layer can be used to modify the surface of the substrate to form a highly crystallized TCO layer thereon.

Abstract: Manganese vanadium tantalum oxide that can be represented by the formula MnxVyTazOw, where 1?x?3, 0.001?y?3, 0.001?z?2, and w=7, and alternately, x=1.25?x?2.45, 0.1?y?2.39, 0.2?z?1.9, and w=7, methods of producing MnxVyTazOw, a pigment coated with MnxVyTazOw and a chalcogenide glass layer, and a method of producing the coated pigment are described. The disclosed manganese vanadium tantalum oxide has superior near-infrared reflective properties. The disclosed methods of producing the manganese vanadium tantalum oxide provide products with superior phase purity, appearance and performance and take health and safety into consideration. The construction of the disclosed coated pigment combines the reflective properties of the substrate with the near-infrared reflective properties of MnxVyTazOw, while the chalcogenide glass layer provides aesthetic appeal. The disclosed method of producing the coated pigment involves physical vapor deposition of MnxVyTazOw, and the chalcogenide glass layer.

Abstract: The invention reduces generation of particles. An embodiment of the preset invention includes a target holder (6) for holding a target (4), a power source (12) for applying a power to the target holder (6), a substrate holder (7), a first shutter (14) capable of opening and closing between the target (4) and the substrate holder (7), a second shutter (19) located closer to the substrate holder (7) than to the first shutter (14), and capable of opening and closing between the target holder (6) and the substrate holder (7), and a controller (con) for controlling the power source (12) and the first and second shutters (14), (19). The controller (con) applies a first power to the target holder (6) in the state where the first shutter (14) is closed, then opens the first shutter (14), and further applies a second power higher than the first power to the target holder (6) in the state where the second shutter (19) is closed.

Abstract: An organo-optoelectronic nanowire is fabricated. It is made through a one-step unit operation under a low temperature. An organo-optoelectronic template is obtained for the fabrication, whose idea is a bio-inspired one. The nanowire obtained has a high efficiency and a high surface area; and, heat generated on operation is easily emitted. Thus, the method has great potential for future use on optoelectronic devices.

Abstract: A CPP-GMR spin valve having a composite spacer layer comprised of at least one metal (M) layer and at least one semiconductor or semi-metal (S) layer is disclosed. The composite spacer may have a M/S, S/M, M/S/M, S/M/S, M/S/M/S/M, or a multilayer (M/S/M)n configuration where n is an integer?1. The pinned layer preferably has an AP2/coupling/AP1 configuration wherein the AP2 portion is a FCC trilayer represented by CoZFe(100-Z)/FeYCo(100-Y)/CoZFe(100-Z) where y is 0 to 60 atomic %, and z is 75 to 100 atomic %. In one embodiment, M is Cu with a thickness from 0.5 to 50 Angstroms and S is ZnO with a thickness of 1 to 50 Angstroms. The S layer may be doped with one or more elements. The dR/R ratio of the spin valve is increased to 10% or greater while maintaining acceptable EM and RA performance.

Abstract: Since structural portions of a device made of a plurality of materials are different from one another in mechanical hardness, it is very difficult to uniformly lap the structural portions. This is attributable to generation of machining recessions due to differences in lapped amount when large fixed abrasive grains are used, and generation of lapping marks caused by that the dropped abrasive grains rotate. Accordingly, in order to cope with the disadvantage, it is essential to surely grip abrasive grains of small size to a surface of a surface plate.

Abstract: A module to carry targets in a sputter deposition installation for coating two-sided substrates is described. The module is mountable to the installation through an interface flange that carries at least two targets with their associated magnet systems. When the module is mounted, the targets take positions at opposite sides of the two-sided substrate, while the magnet systems orient the sputter deposition towards the substrate. The module enables coating of both sides of the substrate in one single pass. Different configurations are described with gas distribution systems and additional substrate supports. An enclosure with adjustable blinds in order to reduce gas spreading is also included.

Abstract: Methods for forming a conductive oxide layer on a substrate are provided. The method can include sputtering a transparent conductive oxide layer (“TCO layer”) on a substrate from a target (e.g., including cadmium stannate) at a sputtering temperature of about 10° C. to about 100° C. The TCO layer can then be annealed in an anneal temperature comprising cadmium at an annealing temperature of about 500° C. to about 700° C. The method of forming the TCO layer can be used in a method for manufacturing a cadmium telluride based thin film photovoltaic device, further including forming a cadmium sulfide layer over the transparent conductive oxide layer and forming a cadmium telluride layer over the cadmium sulfide layer.

Abstract: A display device in which an Al alloy film and a conductive oxide film are directly connected without interposition of refractory metal and some or all of Al alloy components deposit or are concentrated at the interface of contact between the Al alloy film and the conductive oxide film. The Al alloy film contains 0.1 to 6 at % of at least one element selected from the group consisting of Ni, Ag, Zn, Cu and Ge, and further contains 1) 0.1 to 2 at % of at least one element selected from the group consisting of Mg, Cr, Mn, Ru, Rh, Pd, Ir, Pt, La, Ce, Pr, Gd, Tb, Sm, Eu, Ho, Er, Tm, Yb, Lu and Dy or 2) 0.1 to 1 at % of at least one element selected from the group consisting of Ti, V, Zr, Nb, Mo, Hf, Ta and W, as the alloy components.

Abstract: Molybdenum, sputtering targets and sintering characterized as having no or minimal texture banding or through thickness gradient. The molybdenum sputtering targets having a fine, uniform grain size as well as uniform texture, are high purity and can be micro-alloyed to improved performance. The sputtering targets can be round discs, square, rectangular or tubular and can be sputtered to form thin films on substrates. By using a segment-forming method, the size of the sputtering target can be up to 6 m×5.5 m. The thin films can be used in electronic components such as Thin Film Transistor-Liquid Crystal Displays, Plasma Display Panels, Organic Light Emitting Diodes, Inorganic Light Emitting Diode Displays, Field Emitting Displays, solar cells, sensors, semiconductor devices, and gate device for CMOS (complementary metal oxide semiconductor) with tunable work functions.

Abstract: Disclosed is a method for fabricating a composite material comprising nano carbon and metal or ceramic, in more detail, a method for fabricating a composite material in which metallic or ceramic particles are uniformly dispersed on a nano carbon surface, the method including (1) coating a metal layer on nano carbon, (2) fabricating composite nano powders by performing a thermal treatment for the nano carbon coated with the metal layer, and (3) sintering the composite nano powders, whereby the composite nano powders, in which metallic or ceramic nano powders are uniformly mixed on the surface of the nano carbon, can be easily fabricated, and such composite nano powders can be sintered so as to fabricate the composite material, in which the nano carbon and the metallic or ceramic powders are uniformly dispersed.

Abstract: A piezoelectric film includes crystals of a complex oxide having a perovskite structure with (100)-preferred orientation and represented as: Pb1+?[(ZrxTi1-x)1-yNby]Oz, where x is a value in a range of 0<x<1, y is a value in a range of 0.13?y?0.25, and ? and z are values within ranges where the perovskite structure is obtained and ?=0 and z=3 are standard, wherein a ratio between a diffraction peak intensity I(100) from a perovskite (100) plane and a diffraction peak intensity I(200) from a perovskite (200) plane as measured by X-ray diffraction satisfies I(100)/I(200)?1.25.

Abstract: A method for manufacturing a lanthanum boride film includes, in the state in which a lanthanum boride target having an oxygen content in a range of 0.4 to 1.2 percent by mass and a substrate are arranged to face each other, a step of forming a lanthanum boride film on the substrate by a sputtering technique, and when the mean free path of a sputtering gas molecule in film formation is represented by ? (mm) and the distance between the substrate and the target is represented by L (mm), L/? is set to 20 or more, and the value obtained by dividing a discharge electrical power by a target area is set in a range of 1 to 5 W/cm2.

Abstract: The present invention provides a method of forming an electrode having reduced corrosion and water decomposition on a surface thereof. A conductive layer is deposited on a substrate. The conductive layer is partially oxidized by an oxygen plasma process to convert a portion thereof to an oxide layer thereby forming the electrode. The oxide layer is free of surface defects and the thickness of the oxide layer is from about 0.09 nm to about 10 nm and ranges therebetween, controllable with 0.2 nm precision.

Abstract: An object is to provide a method of manufacturing a lithium-ion secondary battery suitable for mass production. A lithium-ion secondary battery is manufactured in such a manner that a positive electrode layer is formed on a base including a plane by chemical vapor deposition which is specifically metal-organic chemical vapor deposition, an electrolyte layer is formed on the positive electrode layer, and a negative electrode layer is formed on the electrolyte layer. The positive electrode layer is formed with a MOCVD apparatus. The MOCVD apparatus is an apparatus with which a liquid or a solid of an organic metal raw material is vaporized to produce a gas and the gas is reacted to undergo pyrolysis so that a film is formed. By forming all the layers using sputtering, evaporation, or chemical vapor deposition, a solid lithium-ion secondary battery can also be realized.

Abstract: Accordingly, the present invention provides a method of forming an electrode having reduced corrosion and water decomposition on a surface thereof. A substrate which has a conductive layer disposed thereon is provided and the conductive layer has an oxide layer with an exposed surface. The exposed surface of the oxide layer contacts a solution of an organic surface active compound in an organic solvent to form a protective layer of the organic surface active compound over the oxide layer. The protective layer has a thickness of from about 0.5 nm to about 5 nm and ranges therebetween depending on a chemical structure of the surface active compound.

Abstract: Hybrid silicon-carbon nanostructured electrodes are fabricated by forming a suspension including carbon nanostructures and a fluid, disposing the suspension on a substrate, removing at least some of the fluid from the suspension to form a carbon nanostructure layer on the substrate, and sputtering a layer of silicon over the carbon nanostructure layer to form the hybrid silicon-carbon nanostructured electrode. Sputtering the layer of silicon facilitates fabrication of large dimension electrodes at room temperature. The hybrid silicon-carbon nanostructured electrode may be used as an anode in a rechargeable battery, such as a lithium ion battery.

Abstract: Disclosed is a hard coating excellent in wear resistance, insusceptible to seizure, and excellent sliding property even after use over the long term, and a method capable of forming the hard coating excellent in sliding property in a short time. The hard coating is a hard coating expressed by chemical formula MxBaCbNc, wherein M is at least one kind of metallic element selected from the group consisting of elements in the groups 4A, 5A, and 6A of the periodic table, and Si, Al, the hard coating having chemical composition satisfying respective formulas expressed by 0?a?0.2, 0?c?0.2, 0<x?a?c, x?a?c<b?0.9, 0.05?x<0.5, and x+a+b+c=1, where x, a, b, and c denote respective atomic ratios of M, B, C, and N.

Abstract: The invention relates to a barrier film, in which a backing film (4) containing an inorganic barrier (3) (SiOx or AlOx) is combined with a weather-resistant protective layer (1) using lamination or extrusion coating, an adhesion promoter being used as the adhesive layer (2).

Abstract: The present invention relates to a method for applying a coating to workpieces and/or materials containing at least one readily oxidizable nonferrous metal or an alloy containing at least one readily oxidizable nonferrous metal. The method comprises the following steps: b) Pretreating the workpiece and/or material by plasma reduction c) Applying a cover layer by plasma coating in a plasma coating chamber (FIG. 4a).

Abstract: Smoking article components, cigarettes, methods for making cigarettes and methods for smoking cigarettes are provided that use transition metal oxide clusters capable of catalyzing and/or oxidizing the conversion of carbon monoxide to carbon dioxide and/or adsorbing carbon monoxide. Cut filler compositions, cigarette paper and cigarette filter material can comprise transition metal oxide clusters.

Abstract: A projection system, projection screen, and method for making the screen are provided. The projection screen includes a flexible transparent substrate having a first surface and an opposite second surface; and a reflective film formed on the second surface of the substrate. The reflective film reflects red, green and blue light, such as from a projector, making it viewable on the screen, and substantially absorbs ambient light other than the above specified light wavelengths, resulting in relatively higher contrast.

Abstract: The present invention is a method for gettering undesirable atomic species from a vaporizing atmosphere during deposition of multi-element thin film phosphor compositions. The method comprises vaporizing one or more getter species immediately prior and/or simultaneously during the deposition of a phosphor film composition within a deposition chamber. The method improves the luminance and emission spectrum of phosphor materials used for full colour ac electroluminescent displays employing thick film dielectric layers with a high dielectric constant.

Abstract: A sputtering method includes receiving etch time information for a first substrate detected in a dry etching process, calculating a deposition time for a second substrate from the etch time information for the first substrate, and executing sputtering for the second substrate based the calculated deposition time. The thickness of the thin film deposited on the substrate in the sputter device may be uniformly maintained by using etch end point information detected in an end point detection (EPD) device. A sputtering system comprises a sputter device for executing a sputtering process for depositing a thin film on a substrate by a sputtering method, an EPD device for generating EPD information including etch time information for the substrate for a calculation of a deposition time during which the thin film is deposited, and a controller for calculating a deposition time by using the EPD information, and for controlling the sputter device based on the calculated deposition time.

Abstract: Methods are generally provided for forming a cadmium sulfide layer on a substrate. In one particular embodiment, the method can include sputtering a cadmium sulfide layer on a substrate in a sputtering atmosphere comprising an inorganic fluorine source gas. Methods are also generally provided for manufacturing a cadmium telluride based thin film photovoltaic device. Cadmium telluride based thin film photovoltaic devices are also generally provided. The device can include a substrate; a transparent conductive oxide layer on the substrate; a cadmium sulfide layer on the transparent conductive oxide layer; and, a cadmium telluride layer on the cadmium sulfide layer. The cadmium sulfide layer includes fluorine.

Abstract: Conventional electrochromic devices frequently suffer from poor reliability and poor performance. Improvements are made using entirely solid and inorganic materials. Electrochromic devices are fabricated by forming an ion conducting electronically-insulating interfacial region that serves as an IC layer. In some methods, the interfacial region is formed after formation of an electrochromic and a counter electrode layer. The interfacial region contains an ion conducting electronically-insulating material along with components of the electrochromic and/or the counter electrode layer. Materials and microstructure of the electrochromic devices provide improvements in performance and reliability over conventional devices.

Abstract: Cadmium telluride thin film photovoltaic devices are generally provided. The device can include a substrate, a transparent conductive oxide layer on the substrate; a resistive transparent buffer layer on the transparent conductive oxide layer; a cadmium sulfide layer on the resistive transparent buffer layer; a cadmium telluride layer on the cadmium sulfide layer; and, a back contact layer on the cadmium telluride layer. The cadmium sulfide layer can include oxygen in a molar percentage greater than 0% to about 20%. In one particular embodiment, a second cadmium sulfide layer substantially free from oxygen can be positioned between the cadmium sulfide layer and the cadmium telluride layer. Methods of depositing a cadmium sulfide layer on a substrate and methods of manufacturing a cadmium telluride thin film photovoltaic device are also generally provided.

Abstract: A process for manufacturing at least one substrate, especially transparent glass substrates, each provided with a thin-film multilayer comprising an alternation of “n” metallic functional layers especially of functional layers based on silver or a metal alloy containing silver, and of “(n+1)” antireflection coatings, with n being an integer ?3, each antireflection coating comprising at least one antireflection layer, so that each functional layer is positioned between two antireflection coatings, said thin-film multilayer being deposited by a vacuum technique, said multilayer being such that the thicknesses of two functional layers at least are different and the thicknesses of the functional layers have a symmetry within the multilayer relative to the center of the multilayer.

Abstract: An exemplary light blocking plate includes a flat plate-like light pervious member, and a blocking and shielding layer formed on the light pervious member. The blocking and shielding layer includes a top surface facing away from the light pervious member, a bottom surface facing the light pervious member, and a through hole extending from the top surface to the bottom surface. The blocking and shielding layer includes an electromagnetic shielding layer having a first part of the top surface, and a light blocking layer. The light blocking layer includes a first portion having the bottom surface, and a second portion having a second part of the top surface, and extending from the first portion to the second part of the top surface. The electromagnetic shielding layer surrounds the second portion of the light blocking layer. The second portion of the light blocking layer surrounds the through hole.

Abstract: A passive reflective tracking media includes a plurality of multi-layer particles including at least one layer of a high refractive index material and at least one layer of a low refractive index material. The particles are configured to reflect ambient electromagnetic radiation at one or more signature wavelengths. Methods of applying the tracking media to a target object, detecting the tracking media, and fabrication the tracking media are also described.

Abstract: Conventional electrochromic devices frequently suffer from poor reliability and poor performance. Improvements are made using entirely solid and inorganic materials. Electrochromic devices are fabricated by forming an ion conducting electronically-insulating interfacial region that serves as an IC layer. In some methods, the interfacial region is formed after formation of an electrochromic and a counter electrode layer. The interfacial region contains an ion conducting electronically-insulating material along with components of the electrochromic and/or the counter electrode layer. Materials and microstructure of the electrochromic devices provide improvements in performance and reliability over conventional devices.

Abstract: A surface hardened substrate includes a base, a transition layer disposed on a surface of the base, and a hard layer disposed on the transition layer. The transition layer includes at least two kinds of transition metals. The hard layer includes an alloy and a nonmetal. The alloy includes the at least two kinds of transition metals.

Abstract: A surface hardened substrate includes a base, a transition layer disposed on a surface of the base, and a hard layer disposed on the transition layer. The transition layer includes at least two kinds of transition metals. The hard layer includes a composite that comprises the at least two kinds of transition metals and a nonmetal.

Abstract: Structures and methods for fabrication servo and data heads of tape modules are provided. The servo head may have two shield layers spaced apart by a plurality of gap layers and a sensor. Similarly, the data head may have two shield layers spaced apart by a plurality of gap layers and a sensor. The distance between the shield layers of the servo head may be greater than the distance between the shield layers of the data head. The material of the gap layers may include tantalum or an alloy of nickel and chromium. The material for the gap layers permits deposition of gap layers with sufficiently small surface roughness to prevent distortion of the tape module and increase the stability of the tape module operation.

Abstract: A bonding film-attached substrate includes: a substrate whose main component is not silicon dioxide, or that does not have a Si-group skeleton; a silicon oxide film formed on a surface of the substrate and adjacent to the substrate using a vapor-phase deposition method, and that has a thickness of from 100 nm to 2,000 nm, inclusive; and a bonding film provided by plasma polymerization, wherein the bonding film includes (i) a Si skeleton that contains a siloxane (Si—O) bond, and has a crystallinity of 45% or less, and (ii) an elimination group that binds to the Si skeleton, the elimination group being an organic group.

Abstract: A hexagonal boron nitride thin film is grown on a metal surface of a growth substrate and then annealed. The hexagonal boron nitride thin film is coated with a protective support layer and released from the metal surface. The boron nitride thin film together with the protective support layer can then be transferred to any of a variety of arbitrary substrates.

Abstract: A sputtering apparatus includes a preheating chamber, a deposition chamber, a connection assembly connecting the preheating chamber to the deposition chamber, a first supporting assembly received in the preheating chamber, a second supporting assembly received in the deposition chamber, a number of posts capable of mounting on each of the first and second supporting assemblies, and a transferring robot arranged in the preheating chamber. The connection assembly includes a connection member defining a passage in communication with the preheating chamber and the deposition chamber and a partition plate moveably coupled to the connection member. The partition plate is configured for selectively closing or opening the passage. Each post fixes workpieces thereon. The transferring robot is configured for demounting the post from the two supporting assemblies, transferring the demounted post between the preheating chamber and the deposition chamber, and mounting the transferred post on the two supporting assemblies.

Abstract: Selective solar absorbent coating and manufacturing method, with solar absorption and low emissivity properties. The coating comprises a substrate (1) of metal, dielectric or ceramic material, at least one highly reflective metal layer (2) in mid-far infrared applied to the substrate itself which provides low emissivity properties, a multi-layer structure of alternating dielectric and metallic layers (3) of subnanometric thickness applied to the reflective metal layer and at least one dielectric layer (4) that acts as an anti-reflective layer for the solar spectrum. The coating is applicable as a selective absorbent coating in absorbent tubes for parabolic-trough solar collectors, in solar panels for hot water, heating or domestic cooling, both in the form of absorbent tubes and absorbent sheets, in capture systems in tower solar thermoelectric power plants, and in capture systems in Stirling disk systems.

Abstract: Disclosed is a method relating to graded-composition barrier coatings comprising first and second materials in first and second zones. The compositions of one or both zones vary substantially continuously across a thickness of the zone in order to achieve improved properties such as barrier, flexibility, adhesion, optics, thickness, and tact time. The graded-composition barrier coatings find utility in preventing exposure of devices such as organic electro-luminescent devices (OLEDs) to reactive species found in the environment.

Abstract: A surface acoustic wave device includes a substrate including lithium niobate; a IDT being provided on an upper surface of the substrate and including a plurality of electrode fingers; and a protective film covering the IDT and having an uneven shape on an upper surface thereof. When a pitch width of one pitch of the IDT is p, a width of one of the electrode fingers is p1, a width between the electrode fingers is p2, and a thickness of the IDT is h, following relations are satisfied, p1+p2=p, and h/(2×p)?4.5%. With this configuration, an appropriate reflection characteristic is realized, and the surface acoustic wave device having excellent temperature coefficient of frequency and electrical characteristic can be obtained.

Abstract: A method and system are provided for integrated substrate processing in Cu metallization. The method includes providing a substrate in a vacuum processing tool containing a plurality of processing systems configured to process the substrate and a substrate transfer system configured to transfer the substrate under vacuum conditions between the plurality of processing systems, and performing an integrated deposition process on the substrate. The plurality of processing systems and the substrate transfer system maintain a base pressure of background gases at 6.8×10?8 Ton or lower, preferably 5×10?8 Torr or lower, during the integrated deposition process. According to one embodiment, the integrated process includes depositing a barrier metal layer on the substrate, and depositing a Cu layer on the barrier metal layer. According to another embodiment, the integrated process further includes depositing a Ru layer on the barrier metal layer, and depositing a Cu layer on the Ru layer.

Abstract: Methods are generally provided for forming a conductive oxide layer on a substrate. In one particular embodiment, the method can include sputtering a transparent conductive oxide layer on a substrate at a sputtering temperature from about 50° C. to about 250° C., and annealing the transparent conductive oxide layer at an anneal temperature of about 450° C. to about 650° C. Methods are also generally provided for manufacturing a cadmium telluride based thin film photovoltaic device.

Abstract: Methods are generally provided for forming a conductive oxide layer on a substrate. In one particular embodiment, the method can include sputtering a transparent conductive oxide layer on a substrate from a target (e.g., including cadmium stannate) in a sputtering atmosphere comprising cadmium. The transparent conductive oxide layer can be sputtered at a sputtering temperature of about 100° C. to about 600° C. Methods are also generally provided for manufacturing a cadmium telluride based thin film photovoltaic device.

Abstract: A microporous thin film, a method of forming the same and a fuel cell including the microporous thin film, are provided. The microporous thin film includes uniform nanoparticles and has a porosity of at least about 20%. Therefore, the microporous thin film can be efficiently used in various applications such as fuel cells, primary and secondary batteries, adsorbents, and hydrogen storage alloys. The microporous thin film is formed on a substrate, includes metal nanoparticles, and has a microporous structure with porosity of 20% or more.

Abstract: Methods are generally provided for forming a conductive oxide layer on a substrate. In one particular embodiment, the method can include sputtering a transparent conductive oxide layer (e.g., including cadmium stannate) on a substrate from a target in a sputtering atmosphere comprising cadmium. The transparent conductive oxide layer can be sputtered at a sputtering temperature greater of about 100° C. to about 600° C. Methods are also generally provided for manufacturing a cadmium telluride based thin film photovoltaic device.