Abstract: The present invention relates to articles comprising a cobalt-chromium alloy and bearing a surface oxide layer that has a thickness of 20 to 40 ?, is enriched in chromium relative to said article, and includes a plurality of indentions that, independently, have a diameter of from about 40 to about 500 nm. Such articles can be suitable for implantation in a mammal.

Abstract: An RFID based thermal bubble type accelerometer includes a flexible substrate, an embedded system on chip (SOC) unit, an RFID antenna formed on the substrate and coupled to a modulation/demodulation module in the SOC unit, a cavity formed on the flexible substrate, and a plurality of sensing assemblies, including a heater and two temperature-sensing elements, disposed along the x-axis direction and suspended over the cavity. The two temperature-sensing elements, serially connected, are separately disposed at two opposite sides and at substantially equal distances from the heater. Two sets of sensing assemblies can be connected in differential Wheatstone bridge. The series-connecting points of the sensing assemblies are coupled to the SOC unit such that an x-axis acceleration can be obtained by a voltage difference between the connecting points. The x-axis acceleration can be sent by the RFID antenna to a reader after it is is modulated and encoded by the modulation/demodulation module.

Abstract: Disclosed herein are methods of controlling the etching of a layer of silicon nitride relative to a layer of silicon dioxide. In one illustrative example, the method includes providing an etch bath that is comprised of an existing etchant adapted to selectively etch silicon nitride relative to silicon dioxide, performing an etching process in the etch bath using the existing etchant to selectively remove a silicon nitride material positioned above a silicon dioxide material on a plurality of semiconducting substrates, determining an amount of the existing etchant to be removed based upon a per substrate silicon loading of the etch bath by virtue of etching the plurality of substrates in the etch bath and determining an amount of new etchant to be added to the etch bath based upon a per substrate silicon loading of the etch bath by virtue of etching the plurality of substrates in the etch bath.

Abstract: A mold of the present invention includes: a base 12 made of glass or plastic; an inorganic underlayer 14 provided on a surface of the base 12; a buffer layer 16 provided on the inorganic underlayer 14, the buffer layer 16 containing aluminum; an aluminum layer 18a provided on a surface of the buffer layer 16; and a porous alumina layer 20 provided on a surface of the aluminum layer 18a. The porous alumina layer 20 has a plurality of recessed portions 22 whose two-dimensional size viewed in a direction normal to the surface is not less than 10 nm and less than 500 nm. The mold of the present invention has excellent adhesion between the aluminum layer and the base.

Abstract: A method for chemically treating a disc-shaped substrate having a bottom surface, a top surface and side surfaces by contacting a process medium that is fluid-chemically active with at least the bottom surface of the substrate. The substrate is moved relative to the process medium while forming a triple line between the substrate, the substrate medium and the atmosphere surrounding the substrate and medium. In order to chemically remove errors, particularly in the side surfaces, relative motion should be carried out while avoiding a contacting of the process medium with the top surface of the substrate, where the triple line is formed at a desired height of the side surface facing away from the process medium flow side in relation to the relative motion between the substrate and the process medium.

Abstract: In etching processing of silicon, in particular anisotropic etching processing of silicon in a manufacturing step of MEMS parts, an etching liquid having a long life of etching liquid and an etching method are provided by suppressing a lowering of an etching rate at the time of warming which is characteristic of a hydroxylamine-containing etching liquid. A silicon etching liquid which is an alkaline aqueous solution containing an alkali metal hydroxide, hydroxylamine and an inorganic carbonate compound and having a pH of 12 or more and which is able to anisotropically dissolve monocrystalline silicon therein, and an etching method of silicon using this etching liquid are provided.

Abstract: The invention provides a chemical-mechanical polishing composition comprising alpha alumina, fumed alumina, silica, an oxidizing agent that oxidizes nickel-phosphorous, oxalic acid, optionally, tartaric acid, optionally, a nonionic surfactant, optionally, a biocide, and water. The invention also provides a method of chemically-mechanically polishing a substrate comprising contacting a substrate with a polishing pad and the chemical-mechanical polishing composition, moving the polishing pad and the polishing composition relative to the substrate, and abrading at least a portion of the substrate to polish the substrate.

Abstract: A method of fabricating a material having nanoscale pores is provided. In one embodiment, the method of fabricating a material having nanoscale pores may include providing a single crystal semiconductor. The single crystal semiconductor layer is then patterned to provide an array of exposed portions of the single crystal semiconductor layer having a width that is equal to the minimum lithographic dimension. The array of exposed portion of the single crystal semiconductor layer is then etched using an etch chemistry having a selectivity for a first crystal plane to a second crystal plane of 100% or greater. The etch process forms single or an array of trapezoid shaped pores, each of the trapezoid shaped pores having a base that with a second width that is less than the minimum lithographic dimension.

Abstract: A process for creating porous anode foil for use in an electrolytic capacitor of an implantable cardioverter defibrillator is provided. The process includes electrochemical drilling a plurality of etched metal foils in sequence one after the other in a bath containing electrochemical drilling (ECD) solution initially having a pH of less than 5. Alternatively, an etched foil sheet may be passed through the bath in a substantially continuous manner such that a portion of said etched foil sheet is in contact with the ECD solution is electrochemically drilled to generate pores. Electrochemical drilling is achieved when a current is passed to the foil or portion of the foil sheet in solution.

Abstract: Disclosed is a ceramic substrate including silicon in which the concentration of a silicon oxide and a silicon composite oxide in the surface thereof is less than or equal to 2.7 Atom %.

Abstract: A method for providing a capping layer configured for an energy assisted magnetic recording (EAMR) head including at least one slider. The method comprises etching a substrate having a top surface using an etch to form a trench in the substrate, the trench having a first surface at a first angle from the top surface and a second surface having a second angle from the top surface. The method further comprises providing a protective coating exposing the second surface and covering the first surface, removing a portion of the substrate including the second surface to form a laser cavity within the substrate configured to fit a laser therein, and providing a reflective layer on the first surface to form a mirror, the cavity and mirror being configured for alignment of the laser to the laser cavity and to the mirror and for bonding the laser to the laser cavity.

Abstract: Multi-layer structures are electrochemically fabricated from at least one structural material (e.g. nickel), that is configured to define a desired structure and which may be attached to a substrate, and from at least one sacrificial material (e.g. copper) that surrounds the desired structure. After structure formation, the sacrificial material is removed by a multi-stage etching operation. In some embodiments sacrificial material to be removed may be located within passages or the like on a substrate or within an add-on component. The multi-stage etching operations may be separated by intermediate post processing activities, they may be separated by cleaning operations, or barrier material removal operations, or the like. Barriers may be fixed in position by contact with structural material or with a substrate or they may be solely fixed in position by sacrificial material and are thus free to be removed after all retaining sacrificial material is etched.

Abstract: A method for manufacturing a device comprising a structure with nanowires based on a semiconducting material such as Si and another structure with nanowires based on another semiconducting material such as SiGe, and is notably applied to the manufacturing of transistors.

Abstract: Etch solutions for selectively etching doped oxide materials in the presence of silicon nitride, titanium nitride, and silicon materials, and methods utilizing the etch solutions, for example, in construction of container capacitor constructions are provided. The etch solutions are formulated as a mixture of hydrofluoric acid and an organic acid having a dielectric constant less than water, optionally, with an inorganic acid, and a pH of 1 or less.

Abstract: A thin film device, such as an intravascular stent, is disclosed. The device is formed of a seamless expanse of thin-film (i) formed of a sputtered nitinol shape memory alloy, defining, in an austenitic state, an open, interior volume, having a thickness between 0 5-50 microns, having an austenite finish temperature Af below 37° C.; and demonstrating a stress/strain recovery greater than 3% at 37° C. The expanse can be deformed into a substantially compacted configuration in a martensitic state, and assumes, in its austenitic state, a shape defining such open, interior volume. Also disclosed is a sputtering method for forming the device.

Abstract: The present invention is directed to methods for inhibiting growth of bacteria and to nanometer scale surfaces having antibacterial properties.

Abstract: In accordance with the invention, a method for making microfluidic structures in bulk titanium is disclosed. Specific microfluidic structures include HPLC structures.

Abstract: Two-part implant for attachment of artificial teeth comprising a base body having a bone contact surface and a soft tissue contact surface. Said soft tissue contact surface is at least partially hydroxylated or silanated which results in an improved soft tissue integration.

Abstract: The present invention relates to a method for the wet-chemical edge deletion of solar cells. An etching paste is applied to the edge of a solar cell substrate surface and after the reaction is complete, the paste residue is removed. Optionally, the substrate surface is cleaned and dried. The etching paste comprises 85% H3PO4, NH4HF2 and 65% HNO3 in a ratio in the range from 7:1:1.5 to 10:1:3.5, based on the weight.

Abstract: A process for producing an aluminum wheel includes a cleaning step, in which the surface of the aluminum wheel is chemically etched with an alkali cleaning liquid which contains an alkali builder, an organic builder, and a chelating agent to such an extent that the Si atomic ratio of metal Si to oxide Si is from 0.01 to 9, and a shot blast treatment step can be omitted for cleaning the surface of the aluminum wheel.

Abstract: Provided is an etching composition for electively removing silicon dioxide at a high etch rate, more particularly, a composition for wet etching of silicon dioxide, including 1 to 40 wt % of hydrogen fluoride (HF); 5 to 40 wt % of ammonium hydrogen fluoride (NH4HF2); and water, and further including a surfactant to improve selectivity of the silicon dioxide and a silicon nitride film. Since the composition for wet etching of silicon dioxide has the high etch selectivity of the silicon dioxide to the silicon nitride film, it is useful for selectively removing silicon dioxide.

Abstract: A method for manufacturing a flexible display device in which a flexible substrate is acquired by forming display devices on one side of the substrate and thinning the substrate by removing surface portions on an opposite side of the substrate. The thickness of the substrate is changed from a first thickness, which gives rigidity to the substrate to the second thickness, which gives flexibility to the substrate.

Abstract: A method for bonding a sheath made of a first metallic material to an airfoil made of a second metallic material includes treating the bonding surface of the airfoil; treating the bonding surface of the sheath; placing an adhesive between the bonding surfaces of the airfoil and the sheath; and pressing the airfoil and sheath together so that the adhesive bonds the sheath to the airfoil.

Abstract: A method is provided for processing a wafer used in fabricating semiconductor devices. The method can comprise forming high-aspect ratio features on the wafer, which is followed by wet processing and drying. During drying, pattern collapse can occur. This pattern collapse can be repaired to allow for additional processing of the wafer. In some instance, pattern collapse can be repaired via etching where the etching breaks bonds that can have formed during pattern collapse.

Abstract: The invention provides a method for manufacturing a transistor which includes: providing a substrate having a plurality of transistors formed thereon, wherein each transistor includes a gate; forming a stressed layer and a first oxide layer on the transistors and on the substrate successively; forming a sacrificial layer on the first oxide layer; patterning the sacrificial layer to remove a part of the sacrificial layer which covers on the gates of the transistors; forming a second oxide layer on the residual sacrificial layer and on a part of the first oxide layer which is exposed after the part of the sacrificial layer is removed; performing a first planarization process to remove a part of the second oxide layer located on the gates of the transistors; performing a second planarization process to remove the residual second oxide layer; and performing a third planarization process to remove the stressed layer.

Abstract: The present invention relates to a novel etching media in the form of printable, homogeneous etching pastes with non-Newtonian flow properties for the improved etching of inorganic oxides and silicon surfaces and which allow to prepare smaller features.

Abstract: Methods for fabrication of microfluidic systems on printed circuit boards (PCB) are described. The PCB contains layers of insulating material and a layer or layers of metal buried within layers of insulating material. The metal layers are etched away, leaving fully enclosed microfluidic channels buried within the layers of insulating material.

Abstract: A composition for the etching treatment of a resin molded article. The composition is composed of an aqueous solution containing 20 to 1,200 g/l of an inorganic acid, 0.01 to 10 g/l of a manganese salt, and 1 to 200 g/l of at least one component selected from the group consisting of halogen oxoacids, halogen oxoacid salts, persulfate salts, and bismuthate salts. The etching composition of the invention is an etching solution capable of forming a plating film having a good adhesion to various resin molded articles made of ABS resins or the like, and can be used in place of chromic acid mixtures. The composition is highly safe so that the liquid waste is easily disposed of.

Abstract: In a method for the treatment of silicon wafers in the production of solar cells, a treatment liquid is applied to the surface of the silicon wafers for the purpose of texturization thereof. The treatment liquid contains, as additive, ethyl hexanol or cyclohexanol in an amount ranging from 0.5% to 3%, by weight.

Abstract: A method and apparatus for performing treatment of substrates with a treating liquid. A first storage unit stores an initial life count specifying an allowable number of treatments of substrates to be carried out with treating liquid after an entire liquid replacement with a new supply of the treating liquid; a second storage device stores a normal life count specifying an allowable number of treatments to be carried out with the treating liquid after reaching the initial life count and after a partial liquid replacement; and a control device repeats treatment of the substrates after the entire liquid replacement until the initial life count is reached; and after the initial life count has been reached and the partial liquid replacement has been made, repeats treatment of the substrates until the normal life count is reached, and makes the partial liquid replacement each succeeding time the normal life count is reached.

Abstract: A method of fabricating micro-lenses is provided. A first layer is formed on a substrate. The first layer is comprised of a first material and the substrate is comprised of a second material. An opening is formed in the first layer and an etchant is provided in the opening to etch both the substrate and the first layer to form a first mold for a first micro-lens. The etchant etches the first layer at a different rate than the substrate. A lens material is added to the etched molds to form micro-lenses.

Abstract: The present disclosure provides a method for etching a substrate. The method includes forming a resist pattern on the substrate; applying an etching chemical fluid to the substrate, wherein the etching chemical fluid includes a diffusion control material; removing the etching chemical fluid; and removing the resist pattern.

Abstract: A method for producing a semiconductor wafer includes a number of steps in order including a bilateral material-removing process followed by rounding off an edge of the wafer and grinding front and back sides of the wafer by holding one side and grinding the other. The front and back arc then polished with a polishing cloth including bound abrasives and subsequently treated with an etching medium to carry out a material removal of no more than 1 ?m on each side. The front side is then polished using a polishing cloth including bound abrasives and the back side is simultaneously polished using a polishing cloth free of abrasives while a polish with abrasives is provided. The edge is then polished followed by polishing the back with a polishing cloth including bound abrasives and simultaneously polishing the front with a cloth free of abrasives while a polish including abrasives is provided.

Abstract: Exemplary embodiments provide methods for planarizing a semiconductor surface. In embodiments, the disclosed planarizing methods can include a chemical mechanical planarization (CMP) process using a slurry-free solution that includes hydrogen peroxide (H2O2) but is free of particles such as oxide particles. A semiconductor surface (e.g., germanium) can then be planarized to provide a desirable surface roughness. In embodiments, high-quality Group III-V materials can be formed on the planarized semiconductor surface.

Abstract: A method for making a device includes providing a tubular member which will be formed into the device, masking at least a portion of the inner surface of the tubular member with a removable sacrificial material, selectively removing a portion of the tubular member and sacrificial material using a laser device, and mechanically removing the sacrificial material from the inner surface of the tubular member. Ultrasonic energy could be applied to a workpiece which is being laser cut to prevent any generated slag from welding itself to an exposed surface of the workpiece. A compressed fluid or gas, such as air, could be used to clean the surface of the laser-cut workpiece to remove slag formation which adheres to the surface of the cut workpiece.

Abstract: A method of forming a stent includes the steps of forming an elongated composite member or plurality of elongated composite members into a stent pattern having struts interconnected by crowns, the composite member including an outer member and a core member. Openings are formed through the outer member of the composite member. The composite member is processed to remove the core member from at least a plurality of the struts of the stent without adversely affecting the outer member and such that the core member is not removed from at least a plurality of the crowns of the stent, thereby leaving the outer member with a lumen in at least a plurality of the struts and the outer member with the core member in at least a plurality of the crowns. The lumens may then be filled with a biologically or pharmacologically active substance.

Abstract: A silicon processing method includes: forming a mask pattern on a principal plane of a single-crystal silicon substrate; and applying crystal anisotropic etching to the principal surface to form a structure including a (111) surface and a crystal surface equivalent thereto and having width W1 and length L1. The principal plane includes a (100) surface and a crystal surface equivalent thereto or a (110) surface and a crystal surface equivalent thereto. A determining section for determining the width W1 of the structure is formed in the mask pattern. The width of the determining section for the width W1 of the mask pattern is width W2. The width of the mask pattern other than the determining section is larger than the width W2 over a length direction of the mask pattern.

Abstract: An etchant for dielectrics, such as silicon dioxide, that leaves monocrystalline silicon surface exposed by the etchant free of etch damage, such as etch pits, when the etch is done in the presence of transition metals, such as copper, tungsten, titanium, gold, etc. The etchant comprises hydrofluoric acid and a source of halide anion, such as hydrochloric acid or a metal-halide. The etchant is useful in microelectromechanical system device fabrication and in deprocessing integrated circuits or the like.

Abstract: Bare aluminum baffles are adapted for resist stripping chambers and include an outer aluminum oxide layer, which can be a native aluminum oxide layer or a layer formed by chemically treating a new or used bare aluminum baffle to form a thin outer aluminum oxide layer.

Abstract: The present invention relates to processes involving contacting articles that include titanium or titanium alloy with a solution comprising hydrochloric acid and chloride-containing compound for a time and at a temperature effective to form a plurality of indentions that, independently, have a diameter of from about 200 nm to 10 microns.

Abstract: A process for the preparation of ceramic dental implants having a surface for improving osseointegration, wherein the following process steps are performed for preparing such surface: —preparation of a ceramic blank having a surface; —treating at least one partial area of the surface of the ceramic blank by an ablating process that produces a surface roughness of the surface that corresponds to a treatment by sand blasting under a blasting pressure of from 1.5 bar to 8 bar and with a grain size of the blasting media used for sand blasting of from 30 ?m to 250 ?m; —followed by a chemical treatment of said at least one partial area of the surface of the ceramic blank treated with the ablating process; —followed by a thermal treatment of the blank whose surface has been subjected to said ablating and chemical treatments at temperatures of >125° C. > A ceramic body obtainable by the process according to the invention is also described.

Abstract: There are provided an aqueous solution for separation of a conductive ceramics sintered body in which a conductive ceramic sintered body separated form a glass can be collected in a recyclable condition, and a separating method therefor, and an aqueous solution for separation with which a dark ceramics sintered body, a conductive ceramics sintered body and a glass are separately collected from a glass with a dark ceramics sintered body in which a conductive ceramics sintered body is formed on the dark ceramics sintered body, and a separating method therefor. A treatment liquid having an etching ability for at least one of a glass and a conductive ceramic sintered body is prepared as an aqueous solution 20 for separation of the conductive ceramics sintered body, then the aqueous solution 20 for separation is filled in a container 11, and a glass with a conductive ceramics sintered body 30 is immersed into the aqueous solution 20 for separation in the container 11.

Abstract: A method for manufacturing graphene oxide nanoplatelets and derivative products and the graphene oxide nanoplatelets obtained, comprising two distinct phases, a first phase for obtaining an intermediate material consisting of carbon nanofilaments, each one having a structure comprising continuous ribbon of graphitic material with a small number of stacked monoatomic graphene layers and spirally rolled around and along the main axis of said nanofilaments, and a second phase wherein said carbon nanofilaments are subjected to a high-temperature treatment in order to clean said filaments and increase their degree of crystallinity. Once these nanofilaments are treated, a chemical etching is performed on them comprising an oxidation that causes the fragmentation of the carbon nanofilaments and starts a cleaving method that is completed by physical means in order to obtain graphene oxide nanoplatelets.

Abstract: A method of removing recast from a substrate is disclosed. The method includes chemically removing the recast using an etchant, which provides a visual indication of the presence of the recast when the part has been removed from the etchant. One example chemical etchant is comprised of a sulfuric acid solution that includes sodium chloride, sodium fluoride and ammonium persulfate. After chemical removal of the recast from the substrate, the recast is physically removed from the substrate, for example, by media blasting. The chemical and physical recast removal process can be repeated as desired. To ensure that all the recast has been removed, the substrate is wiped, for example, using a cloth. If all the recast has been removed, the cloth will not change in appearance or color.

Abstract: A method and system provide a magnetic transducer that includes an underlayer and a nonmagnetic layer on the underlayer. The method and system include providing a trench in the nonmagnetic layer. The trench has a plurality of sides. The method and system also include providing a separation layer in the trench. A portion of the separation layer resides on the sides of the trench. The method and system include providing the main pole. At least part of the main pole resides in the trench on the portion of the separation layer and has a plurality of pole sides. The method and system further include removing at least a portion of the second nonmagnetic layer, thereby exposing the portion of the separation layer. The method and system also include providing a side shield. The separation layer magnetically separates the pole sides from the side shield.

Abstract: The invention provides a chemical-mechanical polishing composition comprising alpha alumina, fumed alumina, silica, an oxidizing agent that oxidizes nickel-phosphorous, oxalic acid, optionally, tartaric acid, optionally, a nonionic surfactant, optionally, a biocide, and water. The invention also provides a method of chemically-mechanically polishing a substrate comprising contacting a substrate with a polishing pad and the chemical-mechanical polishing composition, moving the polishing pad and the polishing composition relative to the substrate, and abrading at least a portion of the substrate to polish the substrate.

Abstract: The method of dissolving the solids formed in the apparatus and pipework of a nuclear plant, in which the solids are brought into contact with an aqueous dissolving solution chosen from aqueous solutions of carbonate ions having a concentration of greater than or equal to 0.3M, aqueous solutions of bicarbonate ions, and solutions of a mixture of nitric acid and of a polycarboxylic acid chosen from oxalic acid and triacids.

Abstract: An etching composition for preventing from leaning a capacitor contains hydrofluoric acid (HF), ammonium fluoride (NH4F), an alkyl ammonium fluoride (ReNH3F; where Re is a C1-C10 linear or branched alkyl radical), a surfactant, an alcohol compound, and water. The composition can effectively suppress the leaning phenomenon of capacitors during the formation of the capacitors, so that height of the storage node of the capacitor can be secured, capacitors with improved capacitance can be manufactured, and the process can be adapted to the production of both present and future devices.

Abstract: The present invention relates to coated fullerenes comprising a layer of at least one inorganic material covering at least a portion of at least one surface of a fullerene and methods for making. The present invention further relates to composites comprising the coated fullerenes of the present invention and further comprising polymers, ceramics, and/or inorganic oxides. A coated fullerene interconnect device where at least two fullerenes are contacting each other to form a spontaneous interconnect is also disclosed as well as methods of making. In addition, dielectric films comprising the coated fullerenes of the present invention and methods of making are further disclosed.

Abstract: A method for manufacturing a substrate for a liquid discharge head having a silicon substrate provided with a supply port of a liquid comprises steps of preparing a substrate which is provided with a passive film on one side face thereof, has a first recess and a second recess provided therein so as to penetrate from the one side face into the inner part through the passive film, wherein the recesses satisfy a relation of a ×tan 54.7 degrees?d, where a is defined as a distance between the first recess and the second recess, and d is defined as a depth of the second recess, and forming the supply port by anisotropically etching the crystal from the one side face.