Abstract: A backing plate 1 for sputtering is constituted by a base portion 2 comprising a plate member made of aluminum or its alloy, a surface of which is attached with a target T of an ITO sintered body or the like and a cooling portion 3 in a flat plate shape having a cooling medium flow path 6 at an inner portion thereof. Further, the cooling portion 3 is integrally attached to a rear face of the base 2 by friction agitation bonding. The cooling portion 3 comprises a roll bond panel 4 made of aluminum or its alloy and inner hollow portions of bulged pipe portions 5 constitute the cooling medium flow path 6. Thereby, a backing plate which is light-weighted and has high cooling efficiency can be provided.

Abstract: The present invention provides a bump-joining apparatus, a bump-joining method, and a semiconductor component-manufacturing apparatus whereby bumps and electrode portions of circuit board are perfectly joined with higher join strength than in the conventional art. The apparatus includes a vibration generation device, a pressing device and a control unit, wherein bumps are pressed to electrode portions of a circuit board and vibrated with ultrasonic waves after reaching an initial contact area before reaching a join-completed-contact area at a completion of the joining, so that the bumps are more perfectly joined to the electrode portion than in the conventional art which vibrates the bump only after reaching the join-completed-contact area. Larger join strength is achieved than in the conventional art.

Abstract: An ultrasonic welder for splicing a plurality of workpieces has four anvils, each formed with a meeting surface and displaceable to form a workpiece nest, which has a rectangular shape of a predetermined width. The width of the workpiece nest is sufficient to receive only at least one vertical column of workpieces to be welded, so as to produce a vertical splice. The ultrasonic welder further has a controller controlling a starting position of tooling, which forms the predetermined width of the workpiece nest, and displacing at least one of tools, which form side faces of the nest in reciprocal and time controlled manner. The displaceable tool is brought back to its starting position corresponding to the predetermined width of the workpiece nest before a new bundle of workpieces is loaded therein.

Abstract: A method for manufacturing a connecting structure for covered wires is provided at first, a shield wire (1) and a ground wire (2) are prepared. After overlapping the ground wire (2) on the shield wire 1 across each other, respective overlapping portions of the wires (1, 2) are interposed between an upper resin tip (13) and a lower resin tip (14). Next, the upper and lower resin tips (13, 14) are oscillated with ultrasonic waves while compressing the upper and lower resin tips (13, 14) from the outside. Consequently, respective outside rinds (1d, 2b) of the wires (1, 2) are molten for removal, so that a braided wire (1c) comes into electrical contact with a core line (2a) the upper resin tip (13) is provided, on its butt face, with a stopper (13b) for defining the position of a leading end of the ground wire (2), while the lower resin tip (14) is provided, on its butt face, with a recess (14b) for receiving the stopper (13b).

Abstract: The invention relates to a component and to a method for the production. The component is an electronic component with a micro electronic chip and a carrier which is produced by means of isothermal coagulation.

Abstract: A machine and method for bonding puncture-type conductive contact members of an interconnect to the bond pads of a bare semiconductor die includes the use of one or two ultrasonic vibrators mounted to vibrate one or both of the die and interconnect. A short axial linear burst of ultrasonic energy enables the contact members to pierce hard oxide layers on the surfaces of the bond pads at a much lower compressive force and rapidly achieve full penetration depth.

Abstract: A machine and method for bonding puncture-type conductive contact members of an interconnect to the bond pads of a bare semiconductor die includes the use of one or two ultrasonic vibrators mounted to vibrate one or both of the die and interconnect. A short axial linear burst of ultrasonic energy enables the contact members to pierce hard oxide layers on the surfaces of the bond pads at a much lower compressive force and rapidly achieve full penetration depth.

Abstract: A plurality of bonding pads formed on a slider are integrally joined to an elastic flexure for a disk drive suspension. The pads are ultrasonically bonded to the slider with leads that are held by the flexure. The bonding portions of the leads face and are pressed against the pads with ultrasonic waves. The leads are plastically deformed during these steps to prevent the flexure from being deformed after the ultrasonic bonding process.

Abstract: The present invention provides a bump-joining apparatus, a bump-joining method, and a semiconductor component-manufacturing apparatus whereby bumps and electrode portions of circuit board are perfectly joined, with higher join strength than in the conventional art. The apparatus includes a vibration generation device, a pressing device and a control unit, wherein bumps are pressed to electrode portions of a circuit board and vibrated with ultrasonic waves after reaching an initial contact area before reaching a join-completed-contact area at a completion of the joining, so that the bumps are more perfectly joined to the electrode portion than in the conventional art which vibrates the bump only after reaching the join-completed-contact area. Larger join strength is achieved than in the conventional art.

Abstract: An X-ray image tube according to the present invention has a whole evacuated envelope comprising an metallic input window through which X-rays pass, a metallic frame to which the metallic input window is welded, a hollow cylinder portion, an output window, etc., and the metallic input window and the metallic frame are hermetically welded to each other by ultrasonic welding. By means of such a construction, an X-ray image tube which can suppress occurrence of distortion of an electronic lens formed in the evacuated envelope, and a manufacturing method thereof is realized.

Abstract: The invention encompasses a method of forming a semiconductor chip assembly. A substrate is provided. Such substrate has a pair of opposing surfaces and circuitry formed on one of the opposing surfaces. A semiconductor chip is joined to the substrate. The semiconductor chip has bonding regions thereon. A plurality of wires join to the circuitry and extend over the bonding regions of the semiconductor chip. The wires are pressed down to about the bonding regions of the semiconductor chip with a tool. The tool is lifted from the wires, and subsequently the wires are adhered to the bonding regions of the semiconductor chip. The invention also encompasses an apparatus for forming wire bonds from circuitry on a substrate to a semiconductor chip joined to the substrate. Such apparatus comprises a support for supporting the substrate and the semiconductor chip.

Abstract: An ultrasonic horn used in, for instance, a bonding apparatus, being provided with a capillary attachment hole formed so as to be smaller than the capillary and a jig insertion hole that communicates with the capillary attachment hole. Byway of inserting a jig into the jig insertion hole, the jig insertion hole is pushed open that causes the capillary attachment hole to be widened, so that the capillary is inserted and received in this enlarged capillary attachment hole. The capillary is fastened in place by the elastic force that is generated when the capillary attachment hole returns to its original shape, and the capillary is held in the horn main body without using any fastening tools.

Abstract: The invention intends to reduce a frequency at which defects occur in a welding region during friction stir welding, and to improve the reliability of the welding region. The invention resides in a friction stir welding apparatus wherein a distance to the surfaces of the workpieces is detected by a detector, a change of the detected distance is found by a signal processing device, and a tool is rotated by a rotation driving device in a state where a vertical driving device is controlled by a control device so as to suppress the found change, whereby a plastic fluidity of the workpieces is caused to accomplish joining of the workpieces.

Abstract: An object of the present invention is to provide a sealing method by which an excellent bonding may be realized without thermal shock by bonding at a normal temperature due to ultrasonic coupling oscillation to seal a small size of surface mounting type quartz oscillator or the like. A bonding face (1a) of a sealing metal cap (1) is positioned on a bonded face (2a) of a package substrate (2), and ultrasonic oscillations of different directions are simultaneously imparted in the bonding plane while a suitable load is applied from an upper or a lower part of the bonding portion to the plane in a vertical direction so that the sealing metal cap (1) and the package substrate (2) are welded and fixed to be sealed on the bonding face.

Abstract: An ultrasonic welder for splicing a plurality of workpieces has four anvils, each formed with a meeting surface and displaceable to form a workpiece nest, which has a rectangular shape of a predetermined width. The width of the workpiece nest is sufficient to receive only at least one vertical column of workpieces to be welded, so as to produce a vertical splice. The ultrasonic welder further has a controller controlling a starting position of tooling, which forms the predetermined width of the workpiece nest, and displacing at least one of tools, which form side faces of the nest in reciprocal and time controlled manner. The displaceable tool is brought back to its starting position corresponding to the predetermined width of the workpiece nest before a new bundle of workpieces is loaded therein.

Abstract: A machine and method for bonding puncture-type conductive contact members of an interconnect to the bond pads of a bare semiconductor die includes the use of one or two ultrasonic vibrators mounted to vibrate one or both of the die and interconnect. A short axial linear burst of ultrasonic energy enables the contact members to pierce hard oxide layers on the surfaces of the bond pads at a much lower compressive force and rapidly achieve full penetration depth.

Abstract: Dovetail seals are quickly and inexpensively applied to turbine buckets or rotor disks by ultrasonically welding a piece of material onto the dovetail portion of the bucket or the disk slot of the rotor disk. The method includes placing the piece of material into contact with the appropriate turbine structure and applying a compressive force so as to press the piece of material against the turbine structure. Ultrasonic energy is then applied to the piece of material so as to ultrasonically weld it to the turbine structure.

Abstract: A metallized layer is formed by active metal solder on the surface of a ceramic base material to be joined to a terminal electrode, and metal solder is interposed between the metallized layer and the electrode terminal to join the ceramic heater and the electrode terminal. The joined structure obtained provides for a higher reliability of the joining strength between the terminal joining portion of the heater and the electrode terminal, which prolongs the life of the heater.

Abstract: A fused loop of an elongated material, such as a surgical suture, and apparatus for making the loop. Portions of one or more segments to be joined together are fused in a welding process to form a welded joint. The shear area of the fused portion of the joint determines the strength of the joint and is thus preferably relatively large. Various configurations for the welding apparatus facilitate the creation of relatively large fused portions of the joint by maximizing contact between at least one of the welding members of the apparatus and at least one of the segments to be joined.

Abstract: An apparatus for moving a bonding head of a wire bonder in X, Y and Z axial directions according to the present invention comprises a linear guide member for guiding said bonding head in the X and Y axial directions, a XY moving means for providing a moving force in the horizontal (X and Y axial) directions to said linear guide member by causing an induced electromotive force, a Z moving means for providing a moving force in the vertical (Z axial) direction to a block of said bonding head by causing an induced electromotive force, a hinge means for converting said moving force of said Z moving means into a rotating force, and functioning as a rotation center so that the block is rotated in the direction to a wire clamp motion. Thus, the present invention is not necessary additional device, the assembly is simple and the volumn of entire apparatus is reduced. In this case, since weight to be moved is reduced due to the reduce of volumn, the position control of the bonding head is perfored accurately.

Abstract: A bonding tool has a driver of piezoelectric elements in a stack. A sensor is positioned and held in the stack and includes a piezoelectric element sandwiched between electrodes and insulating wafers. Voltage developed between the electrodes is monitored and used to determine a bonding parameter, including the amplitude and duration of each ultrasonic burst.

Abstract: A cutting blade assembly for an ultrasonic wire bonding machine has a replaceable carbide cutting blade so that the entire blade assembly need not be replaced after a given amount of blade wear.

Abstract: A production method for making a strong connection between an amorphous wire and a terminal. The amorphous wire is placed between the terminal and a bonding metal of aluminum or aluminum alloy, with the bonding metal in contact with both the amorphous metal and the terminal. Then, ultrasonic vibration is applied through the bonding metal to make the connection between the bonding metal and the terminal.

Abstract: A chip junction nozzle in that opposite slant planes 43 which come into contact with edges of 2 sides of the chip in parallel centering around a nozzle center, and a vacuum suction hole 42 opened in the nozzle center are provided, and the slant plane 43 is formed into a mirror surface having the surface hardness more than HrC40. Further, when the surface roughness of the mirror surface is expressed by the average roughness of the center line, the average roughness of the center line is not more than 1.6 &mgr;m.

Abstract: A semiconductor chip mounting method to prevent the occurrence of particles created while mounting the semiconductor chip onto a substrate using ultrasonic thermocompression bonding. The mounting method of the present invention utilizing ultrasonic vibrations involves the following steps: a semiconductor chip having conductive bumps on its main surface is held by its back via an elastic film using a suction tool having a suction hole, the semiconductor chip is positioned against a substrate provided with connection wires corresponding to said conductive bumps, and the semiconductor chip is mounted onto the substrate in such a manner that the conductive bumps connect to said connection wires, and ultrasonic vibrations are applied from the suction tool to the semiconductor chip via said film while said semiconductor chip is being pressed against said substrate in order to bond said conductive bumps with said connection wires.

Abstract: A wire bonding method and apparatus implement the flatly thinner plastic deformation for the joint section of a wire, which has a diameter ranging 100-600 &mgr;m, on its feed side, feed out and position the flatly deformed wire joint section to a target joint surface, and join the wire to it by pressing the positioned wire joint section, with vibration being applied, onto the joint surface with a ultrasonic wire bonder. A high-power semiconductor device fabricated based on this scheme has a long life of wire joints.

Abstract: The amount of a terminal portion of bonding wire which is melted to form a free air ball for ball bonding and the temperature rise in the bonding wire adjacent the free air ball is limited by quenching of the wire and free air ball with a flow of a gas which also effectively removes heat applied to the wire. Since the amount of melting of the bonding wire can be closely regulated, reduction of size and improvement of uniformity of the free air ball can be obtained for ball bonding at pitches of less than ninety mils even when bonding wire of reduced diameter is employed. Quenching of the bonding wire adjacent to the free air ball also limits the temperature rise in the bonding wire and the extent of a heat affected zone having less tensile strength and stiffness to less than one micron and with reduced grain enlargement. Thus wire bonding is provided for electronic packaging of increased reliability, potential functionality, increased manufacturing yield and reduced process complexity.

Abstract: An apparatus for lining up micro-balls in accordance with the present invention includes: ball carrying pallets having a plurality of pits for holding the micro-balls, respectively, on its surface, a pallet holder for holding the ball carrying pallets, a lining-up container defining a sealed chamber in association with the pallet holder hermetically fitted thereto, a storing tank for storing liquid carrier in which micro-balls are dispersed, and applying/collecting device for communicating the storing tank with the lining-up container via a passage to supply the micro-balls together with the liquid carrier from the storing tank to the sealed chamber and return the surplus micro-balls together with the liquid carrier from the sealed chamber to the storing tank.

Abstract: The invention encompasses a method of forming a semiconductor chip assembly. A substrate is provided. Such substrate has a pair of opposing surfaces and circuitry formed on one of the opposing surfaces. A semiconductor chip is joined to the substrate. The semiconductor chip has bonding regions thereon. A plurality of wires join to the circuitry and extend over the bonding regions of the semiconductor chip. The wires are pressed down to about the bonding regions of the semiconductor chip with a tool. The tool is lifted from the wires, and subsequently the wires are adhered to the bonding regions of the semiconductor chip. The invention also encompasses an apparatus for forming wire bonds from circuitry on a substrate to a semiconductor chip joined to the substrate. Such apparatus comprises a support for supporting the substrate and the semiconductor chip.

Abstract: In a jet soldering method, a substrate is held by an actuator and pre-heated by a pre-heater. The pre-heater has a shield member or the substrate is swung to equalize temperature distribution in the substrate. The substrate is then transferred over a primary jet soldering bath while dipping a treatment surface of the substrate in a primary solder jet, so that solder stick to the treatment surface of the substrate. Then, the substrate is transferred over a secondary jet soldering bath while dipping the treatment surface in a secondary solder jet, so that the solder sticking to the substrate is shaped. The transfer conditions of the substrate are differentiated between transfers over the primary jet soldering bath and the secondary jet soldering bath.

Abstract: An ultrasonic vibration bonding tool comprising a square bar-like horn body, bonding working portions projecting from the upper and lower surfaces of the horn body at the central maximum vibration amplitude point, and crooked support portions projecting from front and rear surfaces of the horn body at the two minimum vibration amplitude points which are separate the same distance from the bonding working portions on both sides. Proper bonding can be carried out with this ultrasonic vibration bonding tool.

Abstract: A method and apparatus for creating second order vibrational modes. The apparatus includes a signal generator, a piezoelectric transducer, a plurality of wave propagating beams and reflecting boards. An electric field applied by the signal generator to the piezoelectric transducer induces a unidirectional vibration of the transducer. The vibration is propagated through the beams and reflected by the reflecting boards in a closed polygonal loop. The final reflection direction is perpendicular to the original vibration. A circular or elliptical vibration of the apparatus results. The circular or elliptical vibrational energy can be imparted to the wire bond of an integrated circuit to add strength to the connection.

Abstract: An exposed connecting portion is formed by partially removing a film substrate by such laser etching while leaving a transmission line pattern. A film-type transmission line is placed in such a manner as to overlap the exposed connecting portion and a transmission line pattern on a side to be connected. Bonding, for example thermo compression bonding, is applied to the two overlapped line patterns. Since a gold ribbon is not used and overlapping of a high-dielectric substrate and the film substrate is unnecessary, impedance irregularity is reduced. This makes it possible to carry out bonding without the medium of the film substrate and a connection with high reliability may be achieved.

Abstract: Sealant 11 is supplied in advance to one or both of the electrical bonding areas 5,6 of the component 3 and the mounting surface 4, and as the component 3 is brought in contact with the mounting surface 4, the sealant 11 is compressed and filled therebetween in a required area. At the same time ultrasonic vibration is applied to the component 3 for generating friction between the electrical bonding areas 5, 6 of the component 3 and the mounting surface 4 in tight contact with each other, so that both electrical bonding areas 5, 6 are melted and ultrasonically bonded together, and thereby the component 3 is mounted on the mounting surface 4.

Abstract: A process, termed Trailing Edge Stress Relief (TESR) is described which can be used to produce a weld joint with reduced residual stress level with least defects. In this process, cyclic stresses are applied to the trailing edge of the weld (TEW) during welding. Welding operation is always in quasi-stationary state; but in the TEW microstructure is in formative stages. Therefore TEW is in the Second order Quasi Stationary (SQS) state. During the time solidification of the cup of molten metal takes place, in TESR process cyclic stress is applied that modifies the structure of microstructure. The modification of the structure of microstructure reduces the grain size and the potential energy that is otherwise retained after solidification in it, as residual stress. In the process described pneumatic vibrators are used; but such cyclic stresses can be generated by other devices using electrical, electronic, magnetic or ultrasonic energy; and systems can be designed using combinations thereof.

Abstract: A semiconductor device with wires mounted thereon, each one of the wires, which connects a first bonding point and a second bonding point which are positioned substantially in a lateral relationship, including: a neck height part which extends more or less vertically upward from the first bonding point, a first lateral wire part which extends laterally while dipping downward from the neck height part, a second lateral wire part which extends more or less horizontally from the first lateral wire part, a third lateral wire part which extends while rising from the second lateral wire part, and an inclined part which extends from the third lateral wire part to the second bonding point.

Abstract: The invention relates to an ultrasound welding process and an ultrasound welding device for securing at least two wire ends located one above the other to contact regions of electrical parts, particularly to contact regions of laminations of commutators for rotating electrical machines or motors, having a sonotrode and having a device for introducing a contact pressure force. It is contemplated that all the wire ends (16, 18) to be secured to at least one contact region (14) are pressed against the contact region (14) by means of the contact pressure force (F), and at the same time the sonotrode (28) sets the lower wire end (16) into oscillation transversely to the contact pressure force (F).

Abstract: An improved wire bonding capillary construction as well as a variety of improved wire bonding techniques are described. In one method aspect of the invention, the bonding parameters are controlled to prevent the creation of flash. In other aspects bonding parameters are controlled to provide high quality bonds even at relatively low bonding temperatures. By way of example, good bonding may be obtained even at room temperature and/or without preheating the bonding surface whatsoever. Other bonding parameters including bonding force, bond power and duration may also be controlled in a manner that provides good intermetallic formation between the bonding wire and the bonding surface with or without the creation of flash.

Abstract: An ultrasonic vibration bonding method comprising placing metal portions to be bonded formed on a base portion of a first member upon metal portions to be bonded of a second member, pressing the first and second members with a resonator and a mounting table elastically while the base portion of the first member is located on a bonding working portion side of the resonator and the second member is located on a mounting table side, and bonding together the portions to be bonded of the first and second members with ultrasonic vibration transmitted to the resonator from a transducer. This ultrasonic vibration bonding method can improve work efficiency and prevent a connection failure and resin breakage.

Abstract: The invention encompasses a method of forming a semiconductor chip assembly. A substrate is provided. Such substrate has a pair of opposing surfaces and circuitry formed on one of the opposing surfaces. A semiconductor chip is joined to the substrate. The semiconductor chip has bonding regions thereon. A plurality of wires join to the circuitry and extend over the bonding regions of the semiconductor chip. The wires are pressed down to about the bonding regions of the semiconductor chip with a tool. The tool is lifted from the wires, and subsequently the wires are adhered to the bonding regions of the semiconductor chip. The invention also encompasses an apparatus for forming wire bonds from circuitry on a substrate to a semiconductor chip joined to the substrate. Such apparatus comprises a support for supporting the substrate and the semiconductor chip.

Abstract: A magnetic head includes a metal plate having a conductive pattern, and a slider having a head element and a connecting terminal electrically connected to the head element, and fixed on the metal plate. The connecting terminal and the conductive pattern are connected by ultrasonically bonding a ball bump thereto. The ball bump has on its surface a projecting portion extending in the direction that links the connecting terminal and the conductive pattern. A bonding capillary for use in the ultrasonic bonding includes a tip section having a through hole for passing a wire therethrough. The tip section also has a recessed portion centered on the through hole, and a groove that reaches the outer surface of the tip section across the center of the recessed portion.

Abstract: Sealant 11 is supplied in advance to one or both of the electrical bonding areas 5,6 of the component 3 and the mounting surface 4, and as the component 3 is brought in contact with the mounting surface 4, the sealant 11 is compressed and filled therebetween in a required area. At the same time ultrasonic vibration is applied to the component 3 for generating friction between the electrical bonding areas 5, 6 of the component 3 and the mounting surface 4 in tight contact with each other, so that both electrical bonding areas 5, 6 are melted and ultrasonically bonded together, and thereby the component 3 is mounted on the mounting surface 4.

Abstract: A ultrasonic horn attached to a bonding arm of a bonding apparatus via two horn supporting members. These horn supporting members, preferably made from a resin material, are separate components from the ultrasonic horn, and the ultrasonic horn and the two horn supporting members are provided so that their positional relationship in the axial direction of the ultrasonic horn can be adjusted.

Abstract: A chip junction nozzle in that opposite slant planes 43 which come into contact with edges of 2 sides of the chip in parallel centering around a nozzle center, and a vacuum suction hole 42 opened in the nozzle center are provided, and the slant plane 43 is formed into a mirror surface having the surface hardness more than HrC40. Further, when the surface roughness of the mirror surface is expressed by the average roughness of the center line, the average roughness of the center line is not more than 1.6 &mgr;m.

Abstract: A method of making low profile wire connection comprising steps of: connecting a wire to a first bonding point, moving a capillary straight up a first length, moving the capillary away from a second bonding point thus making the first reverse action to bend the wire in an appropriate angle so as to form the first bent point, again raising the capillary a second length, again moving the capillary in the direction of the second bonding point to bend the wire in an appropriate angle so as to form the second bent point, again raising the capillary a third length, moving the capillary to the second bonding point thus making an action to bend the wire in an appropriate angle so as to form the third bent point, raising the capillary a fourth length by feeding out the wire to a length which is enough to make a wire loop, and then moving the capillary down to the second bonding point where the bonding is performed.

Abstract: This invention provides methods of treatment for welded products by pulse impact energy, preferably ultrasonic, at original production, during the active life period for maintenance and after failure in a repair stage to improve the strength at the weld sites and to fashion stress patterns that reduce stress centers and micro-stress defects. The basic method steps are nondestructive in nature, inducing interior pulse compression waves that temporarily plasticize the metal to relax stresses and redistribute stress patterns in a gradient of metallic grain structure between a higher strength substantially grainless white layer at the weld seam to an internal base metal region in the welded body. Thus, a renewed longer life span and higher strength weld joint regions are generated in welded products.