Abstract: A semiconductor die package. The semiconductor die package comprises a semiconductor die and a molded clip structure comprising a clip structure and a first molding material covering at least a portion of the clip structure. The first molding material exposes an outer surface of the clip structure. The clip structure is electrically coupled to the semiconductor die. The semiconductor die package further comprises a leadframe structure comprising a die attach pad and a plurality of leads extending from the die attach pad. The semiconductor die is on the die attach pad of the leadframe structure. A second molding material covers at least a portion of the semiconductor die and the leadframe structure. The semiconductor die package also includes a heat slug and a thermally conductive material coupling the heat slug to the exposed surface of the clip structure.

Abstract: Provided is a manufacturing method of a semiconductor element substrate including: a step of forming a first photoresist pattern on a first surface of a metallic plate, to form a semiconductor element mounting part, a semiconductor element electrode connection terminal, a wiring, an outer frame part, and a slit; a step of forming a second photoresist pattern on the second surface of the metallic plate; a step of forming the slit by half etching to connect the metallic chip with a four corners of the outer frame part; a step of forming a plurality of concaved parts on the second surface of the metallic plate; a step of forming a resin layer by injecting a resin to the plurality of concaved parts; and a step of etching the first surface of the metallic plate and forming the semiconductor element electrode connection terminal and the outer frame.

Abstract: A bonding structure and a method for bonding components, wherein the bonding structure includes a nanoparticle preform. In accordance with embodiments, the nanoparticle preform is placed on a substrate and a workpiece is placed on the nanoparticle preform.

Abstract: A method of manufacture of an integrated circuit packaging system includes: providing a leadframe having an upper structure, upper protrusions, and a base side facing away from the upper structure and the upper protrusions; forming tie bars in the leadframe with an opening surrounding the upper structure, the tie bars connected to the upper structure and exposed on the base side; connecting an integrated circuit to the upper protrusions; applying an encapsulant over the integrated circuit, over the upper structure, and in the opening with the base side exposed; removing the tie bars exposing a first surface and a second surface of the encapsulant below the first surface, and forming a die paddle from the upper structure and exposed from the second surface; and removing the leadframe from the base side forming island terminals from the upper protrusions exposed from the second surface and isolated from the die paddle.

Abstract: In a non-leaded type semiconductor device, a tab, tab suspension leads, and other leads are exposed to one surface of a seal member. A semiconductor element is positioned within the seal member and fixed to a surface of the tab with an adhesive. The tab is formed larger than the semiconductor element so that outer peripheral edges of the tab are positioned outside outer peripheral edges of the semiconductor element. A groove is formed in the tab surface portion positioned between the area to which the semiconductor element is fixed and wire connection areas to which the wires are connected, the groove being formed so as to surround the semiconductor element fixing area, thereby preventing peeling-off between the tab to which the semiconductor element is fixed and the resin which constitutes the package.

Abstract: In a non-leaded type semiconductor device, a tab, tab suspension leads, and other leads are exposed to one surface of a seal member. A semiconductor element is positioned within the seal member and fixed to a surface of the tab with an adhesive. The tab is formed larger than the semiconductor element so that outer peripheral edges of the tab are positioned outside outer peripheral edges of the semiconductor element. A groove is formed in the tab surface portion positioned between the area to which the semiconductor element is fixed and wire connection areas to which the wires are connected, the groove being formed so as to surround the semiconductor element fixing area, thereby preventing peeling-off between the tab to which the semiconductor element is fixed and the resin which constitutes the package.

Abstract: Some exemplary embodiments of an advanced direct contact leadless package and related structure and method, especially suitable for packaging high current semiconductor devices, have been disclosed. One exemplary structure comprises a mold compound enclosing a first contact lead frame portion, a paddle portion, and an extended contact lead frame portion held together by a mold compound. A first semiconductor device is attached on top of the lead frame portions as a flip chip, while a second semiconductor device is attached to a bottom side of said paddle portion and is in electrical contact with said the first semiconductor device. The extended contact lead frame portion is in direct electrical contact with the second semiconductor device without using a bond wire. Alternative exemplary embodiments may include additional extended lead frame portions, paddle portions, and semiconductor devices in various configurations.

Abstract: Various semiconductor package arrangements and methods that improve the reliability of wire bonding a die to ground or other outside contacts are described. In one aspect, selected ground pads on the die are wire bonded to a bonding region located on the tie bar portion of the lead frame. The tie bar is connected to an exposed die attach pad that is downset from the bonding region of the tie bar. In some embodiments, the bonding region and the leads are at substantially the same elevation above the die and die attach pad. The die, bonding wires, and at least a portion of the lead frame can be encapsulated with a plastic encapsulant material while leaving a contact surface of the die attach pad exposed to facilitate electrically coupling the die attach pad to an external device.

Abstract: A method of fabricating a chip package is provided. A thin metal plate having a first protrusion part, a second protrusion part and a plurality of third protrusion parts are provided. A chip is disposed on the thin metal plate, and a plurality of bonding wires for electrically connecting the chip to the second protrusion part and the second protrusion part to the third protrusion parts is formed. An upper encapsulant and a lower encapsulant are formed on the upper surface and the lower surface of the thin metal plate respectively. The lower encapsulant has a plurality of recesses for exposing a portion of the thin metal plate at locations where the first protrusion part, the second protrusion part and the third protrusion parts are connected to one another. Finally, the thin metal plate is etched by using the lower encapsulant as an etching mask.

Abstract: In accordance with the present invention, there is provided a semiconductor package (e.g., a QFP package) including a uniquely configured leadframe sized and configured to maximize the available number of exposed leads in the semiconductor package. More particularly, the semiconductor package of the present invention includes a generally planar die pad or die paddle defining multiple peripheral edge segments. In addition, the semiconductor package includes a plurality of leads. Some of these leads are provided in two concentric rows or rings which at least partially circumvent the die pad, with other leads including portions which protrude from respective side surfaces of a package body of the semiconductor package. Connected to the top surface of the die pad is at least one semiconductor die which is electrically connected to at least some of the leads. At least portions of the die pad, the leads, and the semiconductor die are encapsulated by the package body.

Abstract: A semiconductor device assembly or package includes at least one semiconductor device that is positioned adjacent to floating leads. Such an assembly or package may include at least two semiconductor devices that face opposite directions from one another, with each being oriented such that bond pads thereof are at an opposite side of the assembly or package from bond pads of the other. Alternatively, an assembly or package may include a lead assembly with an internal portion, including one or more floating leads, and an external portion that are in planes that are offset relative to one another. Methods for designing lead frames, assemblies, and packages are also disclosed, as are assembly and packaging methods.

Abstract: A semiconductor package includes a lead frame, a first chip, a second chip, a plurality of bonding wires and a mold compound. The lead frame includes a pad portion at a center of the frame and a plurality of lead portions. The pad portion and the plurality of lead portions collectively define a receiving portion. The first chip is securely received in the receiving portion. The second chip is mechanically attached to the first chip. The plurality of bonding wires electrically connect the second chip to the plurality of lead portions. The mold compound encapsulates the lead frame, the first chip, the second chip and the plurality of bonding wires to form the semiconductor package.

Abstract: A die seal of a semiconductor device may be provided with a varying pattern density such that a gradient between the die region and the die seal may be reduced. Consequently, for a given width of the die seal, a required mechanical stability may be achieved, while at the same time differences in topography between the die region and the die seal may be reduced, thereby contributing to superior process conditions for sophisticated lithography processes.

Abstract: An integrated circuit module package includes a lead frame having a recessed area. A semiconductor die containing active electrical components is attached to the recessed area of the lead frame. An integrated passive device containing passive electrical components is vertically stacked with, and electrically coupled to, the semiconductor die. An optional heat sink is attached to the integrated passive device. The integrated passive device is connected to the lead frame by conductors to electrically couple the integrated passive device and the semiconductor die to circuitry external to the integrated circuit module package. A cap is then attached to the heat sink or the integrated passive device to protect the semiconductor die and the integrated passive device. The integrated circuit module package dissipates heat from the semiconductor die through the lead frame, and dissipates heat from the integrated passive device through the cap and optional heat sink.

Abstract: In accordance with the present invention, there are provided multiple embodiments of a semiconductor package, each embodiment including a uniquely configured leadframe sized and configured to maximize the available number of exposed leads in the semiconductor package. More particularly, each embodiment of the semiconductor package of the present invention includes a generally planar die paddle defining multiple peripheral edge segments and a plurality of leads, the exposed portions of the bottom surfaces of which are segregated into at least two concentric rows. Connected to the top surface of the die paddle is at least one semiconductor die which is electrically connected to at least some of the leads of each row. At least portions of the die paddle, the leads, and the semiconductor die are encapsulated by a package body, the bottom surfaces of the die paddle and the leads of both rows thereof being exposed in a common exterior surface of the package body.

Abstract: A leadless package system includes: an integrated circuit die having contact pads; external contact terminals with a conductive layer and an external coating layer; connections between contact pads in the integrated circuit die and the external contact terminals; and an encapsulant encapsulates the integrated circuit die and the external contact terminals including the external coating layer.

Abstract: An integrated circuit package system comprising: forming leads adjacent a die paddle having a die pad extension; forming a region having one of the leads depopulated for the die pad extension; and connecting an integrated circuit die to the die pad extension.

Abstract: A battery protection package assembly is disclosed. The assembly includes a power control integrated circuit (IC) with pins for a supply voltage input (VCC) and a ground (VSS) on a first side of the power control IC. First and second common-drain metal oxide semiconductor field effect transistors (MOSFETs) are electrically coupled to the power control IC. The power control IC and the first and second common-drain metal oxide semiconductor field effect transistors (MOSFET) are co-packaged on a common die pad. The power control IC is vertically stacked on top of one or more of the first and second common-drain MOSFETs. Leads coupled to a supply voltage input (VCC) and a ground (VSS) of the power control IC are on a first side of the common die pad.

Abstract: A semiconductor package with isolated inner lead(s) is revealed. A chip is disposed on a leadframe segment and encapsulated by an encapsulant. The leadframe segment includes a plurality of leads, an isolated lead, and an external lead where each lead has an internal portion and an external portion. The isolated inner lead is completely formed inside the encapsulant and the external lead is partially formed inside and extended outside the encapsulant. At least one of the internal portions of the leads is located between the isolated inner lead and the external lead. Two fingers are formed at two opposing ends of the isolated inner lead without covering by the chip. One of the fingers imitates a plurality of fingers of the leads to arrange along a first side of the chip. The other finger of the isolated inner lead and a finger of the external lead are arranged along a second side of the chip.

Abstract: A method for fabricating a quad flat non-leaded (QFN) package includes: forming die pads and bump solder pads by pressing a metal plate, wherein each of the die pads and the bump solder pads has at least a cross-sectional area greater than another located underneath along its thickness dimension, thereby enabling the die pads and the solder pads to be securely embedded in an encapsulant. The method further includes removing the metal plate after forming the encapsulant so as to prevent the encapsulant from overflowing onto the bottom surfaces of the bump solder pads.

Abstract: A lead frame package structure for side-by-side disposed chips including a lead frame, at least two chips, and a package material. The lead frame includes a plurality of inner leads; a plurality of outer leads; and at least two chip carrying areas having different horizontal levels. The chips are of different sizes and are respectively disposed on the chip carrying areas. The package material encapsulate the inner leads, the chip carrying areas and the chips, wherein the outer leads exposed out of the package material extend from the inner leads and have different horizontal levels.

Abstract: The present invention relates to a method for forming a package structure for a light emitting diode (LED) and the LED package structure thereof. By employing the same sawing process to cut through the trenches of the leadframe, the package units are singulated and different lead portions are simultaneously separated from each other in each package unit. Therefore, the overflow issues of the encapsulant can be avoided without using extra taping process.

Abstract: A modular package for a light emitting device includes a leadframe including a first region having a top surface, a bottom surface and a first thickness and a second region having a top surface, a bottom surface and a second thickness that is less than the first thickness. The leadframe further includes an electrical lead extending laterally away from the second region, and the package further includes a thermoset package body on the leadframe and surrounding the first region. The thermoset package body may be on both the top and bottom surfaces of the second region. A leak barrier may be on the leadframe, and the package body may be on the leak barrier. Methods of forming modular packages including thermoset package bodies on leadframes are also disclosed.

Abstract: A resin-encapsulated semiconductor device having a semiconductor chip which is prevented from being damaged. The resin-encapsulated semiconductor device comprises a semiconductor chip including a silicon substrate, a die pad to which the semiconductor chip is secured through a first solder layer, a resin-encapsulating layer encapsulating the semiconductor chip, and lead terminals electrically connected to the semiconductor chip and including inner lead portion covered with the resin-encapsulating layer. The lead terminals are made of copper or a copper alloy. The die pad is made of 42 alloy or a cover alloy and has a thickness (about 0.125 mm) less than the thickness (about 0.15 mm) of the lead terminals.

Abstract: A semiconductor package includes a die pad; a semiconductor die mounted on the die pad; a plurality of leads disposed along peripheral edges of the die pad; a ground bar between the leads and the die pad; and a plurality of bridges connecting the ground bar with the die pad, wherein a gap between two adjacent bridges has a length that is equal to or less than 3 mm.

Abstract: A lead frame having a recessed die bond area. The lead frame has top and bottom surfaces and a first lead frame thickness defined as the distance between the top and bottom surfaces. The lead frame has a die bond area surface located within a reduced die bond area. A second thickness is defined as the distance between the die bond area surface and the bottom surface. The second lead frame thickness is less than the first lead frame thickness such that a semiconductor die disposed and attached to the die bond area surface has a reduced overall package thickness. A side wall formed between the die bond area surface and the top surface contains the adhesive material used to attach the die, which reduces adhesive bleeding and prevents wire bonding contamination.

Abstract: The present invention relates to structure and manufacture method for multi-row lead frame and semiconductor package, the method characterized by forming a pad portion on a metal material (first step); performing a surface plating process or organic material coating following the first pattern formation (second step); forming a second pattern on the metal material (third step); and packaging a semiconductor chip following the second pattern formation (fourth step), whereby an under-cut phenomenon is minimized by applying a gradual etching.

Abstract: The present invention is directed to a lead-frame having a stack of semiconductor dies with interposed metalized clip structure. Level projections extend from the clip structure to ensure that the clip structure remains level during fabrication.

Abstract: A semiconductor package comprises a die attach pad and a support member at least partially circumscribing it. Several sets of contact pads are attached to the support member. The support member is able to be etched away thereby electrically isolating the contact pads. A method for making a leadframe and subsequently a semiconductor package comprises partially etching desired features into a copper substrate, and then through etching the substrate to form the support member and several sets of contact pads. Die attach, wirebonding and molding follow. The support member is etched away, electrically isolating the contact pads and leaving a groove in the bottom of the package. The groove is able to be filled with epoxy or mold compound.

Abstract: A Quad Flat No-Lead (QFN) semiconductor package includes a die pad; I/O connections disposed at the periphery of the die pad; a chip mounted on the die pad; bonding wires; an encapsulant for encapsulating the die pad, the I/O connections, the chip and the bonding wires while exposing the bottom surfaces of the die pad and the I/O connections; a surface layer formed on the bottoms surfaces of the die pad and the I/O connections; a dielectric layer formed on the bottom surfaces of the encapsulant and the surface layer and having openings for exposing the surface layer. The surface layer has good bonding with the dielectric layer that helps to prevent solder material in a reflow process from permeating into the die pad and prevent solder extrusion on the interface of the I/O connections and the dielectric layer, thereby increasing product yield.

Abstract: A method of preparing a portion of the side of a terminal of an Integrated Circuit (IC) package for solder is disclosed. The method comprises the steps of attaching an IC die to a leadframe comprising a connecting bar, reducing the thickness of a portion of the connecting bar, overmolding the leadframe with a mold compound, removing the mold compound from the reduced-thickness portion of the connecting bar using a laser, coating the reduced-thickness portion of the connecting bar with a solder-wettable material, and cutting through the thickness of the connecting bar within the reduced thickness portion of the connecting bar, wherein the cut has a width that is less than the width of the reduced thickness portion of the connecting bar.

Abstract: A method and packaging for semiconductor devices and integrated circuits is disclosed that eliminates warpage stress on packages caused by coefficient of thermal expansion (CTE) mismatch between the device, lead frame or die paddle and a molding compound. Generally, the method includes steps of: (i) mounting the die on which the device is fabricated to a die paddle of a leadframe; and (ii) encapsulating the die on the die paddle and at least a portion of the leadframe in a molding compound, wherein a difference between a first volume of molding compound above a plane of the leadframe and a second volume of molding compound below the plane of the leadframe is sufficiently reduced to substantially eliminate warpage of the finished package due to mismatch of CTEs of the device, lead frame and packaging compound. The die paddle may be etched or reduced to facilitate molding compound flowing under the plane of the leadframe. Other embodiments are also disclosed.

Abstract: A method of manufacture of a thin package system with external terminals includes: providing a leadframe; providing a template for defining an external bond finger; forming external bond fingers in the template on the leadframe; forming land pad terminals by a first multi-layer plating; providing a die; attaching the die to the land pad terminals above the leadframe with an adhesive on the leadframe; covering an encapsulant over at least portions of the die and the external bond fingers; and removing the leadframe leaving a surface of the adhesive coplanar with a surface of the encapsulant.

Abstract: A semiconductor device is provided which comprises a substrate (501) having a plurality of bond pads (503) disposed thereon. Each bond pad has a major axis and a minor axis in a direction parallel to the substrate, and the ratio of the major axis to the minor axis increases with the distance of a bond pad from the center of the substrate.

Abstract: An integrated circuit packaging system includes: a plurality of leads with a predetermined thickness and a predetermined interval gap between each of the plurality of leads; each one of the plurality of leads includes first terminal ends disposed adjacent an integrated circuit and second terminal ends disposed along a periphery of a package; and a lead-to-lead gap formed between the second terminal ends of alternating leads in excess of the predetermined interval gap.

Abstract: A non-leaded integrated circuit package system is provided providing a die paddle of a lead frame, forming a dual row of terminals including an outer terminal and an inner terminal, and selectively fusing an inner terminal and an adjacent inner terminal to form a fused lead.

Abstract: Semiconductor packages that contain multiple stacked chips that are embedded in a pre-molded carrier frame and methods for making such semiconductor packages are described. The semiconductor packages contain a full land pad array and multiple chips that are stacked vertically. The land pad array contains inner terminals that are formed by first stud bumps that are located on a lower die. The land pad array also contains middle terminals that are formed by first conductive vias in a first molding layer embedding the first die. The first conductive vias are connected to second stud bumps that are located on a second die that is embedded in a second molding layer. The second molding layer contains second conductive vias that are connected to a carrier frame, the bottom of which forms the outer terminals of the land pad array.

Abstract: Some exemplary embodiments of a direct contact leadless package and related structure and method, especially suitable for packaging high current semiconductor devices, have been disclosed. One exemplary structure comprises a first contact lead frame portion, a paddle portion, and an extended contact lead frame portion held together by a mold compound. A first semiconductor device is attached to a top side of the paddle portion and is enclosed by said mold compound, while a second semiconductor device is attached to a bottom side of said paddle portion and is in electrical contact with said the first semiconductor device. The extended contact lead frame portion is in direct electrical contact with the second semiconductor device without using a bond wire. Alternative exemplary embodiments may include additional extended lead frame portions, paddle portions, and semiconductor devices in various configurations.

Abstract: A semiconductor package system is provided. A substrate having a die attach paddle is provided. A first plurality of leads is provided around the die attach paddle having a first plurality of lead tips. A second plurality of leads is provided around the die attach paddle interleaved with the first plurality of leads, at least some of the second plurality of leads having a plurality of depression lead tips. A first die is attached to the die attach paddle. The die is wire bonded to the first plurality of leads and the second plurality of leads. The die is encapsulated.

Abstract: A dual die semiconductor package has a grid array of electrical contacts on a bottom surface of a substrate. There is a first semiconductor die with a base surface mounted to an upper surface of the substrate and the first semiconductor die has first die upper surface external electrical connection pads on an upper surface that are electrically connected to respective electrical contacts of the grid array. There is also a second semiconductor die with a base surface mounted to an upper surface of a lead frame flag. There are second die upper surface external electrical connection pads on an upper surface of the second semiconductor die. The dual die semiconductor package includes leads and at least some of the leads are electrically connected to respective pads that provide the second die upper surface external electrical connection pads. A package body at encloses the first semiconductor die and the second semiconductor die.

Abstract: A lead frame assembly includes at least one die paddle. The die paddle includes a first landing area for receiving a first semiconductor chip and a second landing area for receiving a second semiconductor chip. One or more steps are provided between the first landing area and the second landing area.

Abstract: A semiconductor package structure includes: a dielectric layer; a metal layer disposed on the dielectric layer and having a die pad and traces, the traces each including a trace body, a bond pad extending to the periphery of the die pad, and an opposite trace end; metal pillars penetrating the dielectric layer with one ends thereof connecting to the die pad and the trace ends while the other ends thereof protruding from the dielectric layer; a semiconductor chip mounted on the die pad and electrically connected to the bond pads through bonding wires; and an encapsulant covering the semiconductor chip, the bonding wires, the metal layer, and the dielectric layer. The invention is characterized by disposing traces with bond pads close to the die pad to shorten bonding wires and forming metal pillars protruding from the dielectric layer to avoid solder bridging encountered in prior techniques.

Abstract: Provided is a semiconductor device in which a plurality of chips are packaged without increasing the thickness of the package. A plurality of semiconductor elements (a first and a second semiconductor elements) that are packaged in the semiconductor device are overlaid with each other. Specifically, the first semiconductor element is fixed on the top surface of the first island while the second semiconductor element is fixed on the bottom surface of the second island. Furthermore, each of the islands (a first and a second islands) on which the semiconductor elements are respectively mounted in the present invention provides a structure has an irregular shape, and the islands are overlaid with each other along the sides of the semiconductor element to be mounted.

Abstract: A lead frame has a die stage for mounting a semiconductor chip whose electrodes are electrically connected with leads via bonding wires, wherein they are enclosed in a molded resin, thus producing a semiconductor device. The outline of the die stage is shaped so as to be smaller than the outline of the semiconductor chip, and a plurality of cutouts are formed in the peripheral portion of the die stage so as to reduce the overall area of the die stage and to enhance the adhesion between the die stage and molded resin. The length L2 of each cutout ranges from (L1×0.05) to (L1×0.20) where L1 denotes the length of each side of the die stage, and the overall area S2 of the die stage ranges from (S1×0.10) to (S1×0.40) where S1 denotes the overall area of the semiconductor chip.

Abstract: A variety of semiconductor package arrangements and packaging methods are described that improve the reliability of bonding wires that down bond a die to a die attach pad. In one aspect, selected portions of the top surface of a lead frame (which may be in panel form) are plated (e.g., silver plated) to facilitate wire bonding. The plating covers some, but not all of a die attach surface of the die attach pad. In some preferred embodiments, the plating on the die attach pad is arranged as a peripheral ring that surrounds an unplated central region of the die support surface. In other embodiments, the plating on the die attach pad takes the form of bars or other geometric patterns that do not fully cover the die support surface. Unplated portions of the die support surface are roughened to improve the adherence of the die to the die attach pad, thereby reducing the probability of die attach pad delamination and the associated risks to down bonded bonding wires.

Abstract: A system is provided for an integrated circuit package including a leadframe with a lead finger. A groove is in a lead finger for a conductive bonding agent and a passive device is in the groove to be held by the conductive bonding agent.

Abstract: Provided are a lead frame and a semiconductor package including the same. The lead frame includes a first lead frame portion including a plurality of first leads; an adhesive member disposed such that the first leads are adhered to one surface of the adhesive member; and a second lead frame portion including a plurality of second leads disposed such that the second leads are adhered to the other surface of the adhesive member, wherein the second leads are arranged so as not to overlap with the first leads. The lead frame may optionally include a die pad on which a semiconductor chip is installed.

Abstract: A semiconductor device includes a semiconductor element and a lead frame. The lead frame includes a first lead, a second lead, a third lead, a fourth lead, and a fifth lead placed parallel to one another. The first and second leads are placed adjoining to each other and constitute a first lead group, and the third and fourth leads are placed adjoining to each other and constitute a second lead group. The spacing between the first lead group and the fifth lead, the spacing between the second lead group and the fifth lead, and the spacing between the first lead group and the second lead group are larger than the spacing between the first lead and the second lead and the spacing between the third lead and the fourth lead.

Abstract: Chip scale semiconductor packages and methods for making and using the same are described. The chip scale semiconductor packages comprise a leadframe supporting a die that contains a discrete device. The chip scale semiconductor device also contains and an interconnect structure that also serves as a land for the package. The leadframe contains a topset feature adjacent a die attach pad supporting the die, a configuration which provides a connection to the interconnect structure as well as the backside of the die. This leadframe configuration provides a maximum die size to be used in the chip scale semiconductor packages while allowing them to be used in low power and ultra-portable electronic devices. Other embodiments are described.

Abstract: A method of manufacture of an integrated circuit packaging system includes: providing a die paddle, having paddle projections along a paddle peripheral side; forming a lead terminal having a lead extension with the lead extension extending towards the paddle peripheral side and between the paddle projections; mounting an integrated circuit over the die paddle; connecting the integrated circuit and the lead extension; and forming an encapsulation over the die paddle and covering the integrated circuit and lead extension.