Abstract: The semiconductor device includes a silicon interposer made of a semiconductor and a first semiconductor chip mounted on one surface of the silicon interposer. The semiconductor device is provided with a through electrode penetrating the silicon interposer and having a side surface insulated from the silicon interposer; and a wiring connecting one end of the through electrode and the silicon interposer. The through electrode is connected to a power supply wiring or a GND wiring provided on the first semiconductor chip.

Abstract: A method of manufacture of an integrated circuit packaging system includes: forming a flip chip die, having a backside protrusion; mounting a wire bond die on the flip chip die, adjacent to the backside protrusion; and mounting an internal stacking module over the backside protrusion and the wire bond die.

Abstract: A semiconductor package can include a semiconductor die having an integrated circuit, a first die surface, and an opposite second die surface. A packaging can be attached to the die and have a holder surface opposite the first die surface. A heat spreader can be configured to cover the second die surface and the packaging surface and can be attached thereto by a layer of adhesive positioned between the heat spreader and the semiconductor die. A semiconductor package array can include an array of semiconductor dies and a heat spreader configured to cover each semiconductor die. A conductive lead can be electrically connected to the integrated circuit in a semiconductor die and can extend from the first die surface. Manufacturing a semiconductor package can include applying thermally conductive adhesive to the heat spreader and placing the heat spreader proximate the semiconductor die.

Abstract: A method of manufacture of an integrated circuit packaging system includes: providing a first board-on-chip-structure having a first integrated circuit die mounted over a substrate and the substrate having a substrate cavity; mounting a second board-on-chip-structure over the first board-on-chip-structure, the second board-on-chip-structure having a second integrated circuit die mounted under an interposer and the interposer having an interposer cavity; connecting the first board-on-chip-structure to the second board-on-chip-structure with an internal interconnect; and encapsulating the first board-on-chip-structure, the second board-on-chip-structure, and the internal interconnect with an encapsulation.

Abstract: An integrated circuit package has a substrate; a discrete capacitor coupled to a first surface of the substrate; an integrated circuit die coupled to the first surface of the substrate over the discrete capacitor; and a lid coupled to the substrate, the lid encapsulating the integrated circuit die and the discrete capacitor.

Abstract: A cavity or die down ball grid array package includes an interposer substrate structure attached to the die. In an example, the interposer substrate reduces the interconnect length from a board to which the package mounts to power and ground pads on a top layer of the semiconductor or integrated circuit (IC) die. In this example, the interposer substrate also removes the requirement that power and ground pads be located on a periphery of the die. Power and ground pads can be located in an interior region on a top metal layer where they can be interconnected to the interposer substrate using electrically conductive bumps or wire bond(s).

Abstract: A semiconductor packaging substrate with improved capability of electrostatic dissipation comprises a dielectric layer, a plurality of leads, a plurality of first electrostatic guiding traces, a plurality of second electrostatic guiding traces and a solder mask. The first electrostatic guiding traces and the second electrostatic guiding traces are formed in pairs in a plurality of electrostatic dissipation regions on the dielectric layer, where each pair of the first and second electrostatic guiding traces are disposed in equal line spacing and are electrically isolated from each other. The solder mask partially covers the leads but exposes the first electrostatic guiding traces and the second electrostatic guiding traces. The first electrostatic guiding traces are connected to some of the leads to enhance protection against electrostatic discharge.

Abstract: A routing structure of an RDL of a chip is provided. The routing structure comprises a power route, a plurality of first stripes, a ground route, and a plurality of second stripes. The power route is arranged in a first direction and comprises a plurality of first bumps and a plurality of first line segments. Each of the first line segments connects adjacent first bumps. The first stripes are arranged in a second direction and connected to the power route. The ground route is disposed at one side of the power route in a third direction, and comprises a plurality of second bumps and a plurality of second line segments. Each of the second line segments connects adjacent second bumps. The second stripes, are arranged in a forth direction and connected to the ground route. The first stripes and the second stripes are interleaved without intersecting one another.

Abstract: A semiconductor apparatus including built-in power supply circuits capable of supplying a large current with high voltage accuracy. The semiconductor apparatus includes a semiconductor chip including a circuit area and power supply circuits, coils and capacitors. The semiconductor chip, coils and capacitors are provided in a package. Each power supply circuit, a coil and a capacitor compose a switching regulator. The semiconductor chip and the package are connected such that a power supply voltage which will be produced by the switching regulator is supplied to the circuit area. The power supply circuit is supplied with a power supply voltage from the outside of the semiconductor apparatus.

Abstract: This semiconductor device has a frame including a bed portion on which a semiconductor chip is mounted, lead groups arranged in an outer peripheral portion, first bus bars, second bus bars and a rectifying bus bar. The first bus bars and the second bus bars are arranged between the bed portion and the lead groups. The rectifying bus bar is arranged in a region where the second bus bar is not arranged. Wire bonding is not performed on the rectifying bus bar. The rectifying bus bar includes a third bus bar having at least one end joined to a lead or a hanging pin and/or a fourth bus bar formed by extending the first bus bar in an outer peripheral direction in which the leads are arranged. The semiconductor device is provided in which deformation and damage of bonding wires when molding a resin sealed body are prevented.

Abstract: A stackable die mounting system with an efficient interconnect is disclosed that can have a base chip carrier to interconnect a base integrated circuit die to a circuit board on a first side and to a second stacked integrated circuit on a second side. The second side can include a first region having a pad out configuration of a first input output (I/O) to transmit data to be stored by the stacked integrated circuit die. The base chip carrier can have a second region with a pad out of a second I/O that is configured to receive data transmitted by the stacked integrated circuit die wherein the pad out of the second port is translated and rotated about an axis from the pad out of the first region such that a busses with different functions can be vertically integrated from the circuit board.

Abstract: A portable memory card formed from a multi-die assembly, and methods of fabricating same, are disclosed. One such multi-die assembly includes an LGA SiP semiconductor package and a leadframe-based SMT package both affixed to a PCB. The multi-die assembly thus formed may be encased within a standard lid to form a completed portable memory card, such as a standard SD™ card. Test pads on the LGA SiP package, used for testing operation of the package after it is fabricated, may also be used for physically and electrically coupling the LGA SiP package to the PCB.

Abstract: A stackable tier structure comprising one or more integrated circuit die and one or more feedthrough structures is disclosed. The I/O pads of the integrated circuit die are electrically rerouted using conductive traces from the first side of the tier structure to a feedthrough structure comprising one ore more conductive structures. The conductive structures electrically route the integrated die pads to predetermined locations on the second side of the tier structure. The predetermined locations, such as exposed conductive pads or conductive posts, in turn, may be interconnected to a second tier structure or other circuitry to permit the fabrication of a three-dimensional microelectronic module comprising one or more stacked tiers.

Abstract: A microelectronic unit has a structure including a microelectronic element such as a semiconductor chip with a first contact disposed remote from the periphery of the structure. The unit further includes first and second redistribution conductive pads disposed near a periphery of the structure and a conductive path incorporating first and second conductors extending toward the first contact, these conductors being connected to one another adjacent the first contact. The conductive path is connected to the first contact, and can provide signal routing from the periphery of the unit to the contact without the need for long stubs. A package may include a plurality of such units, which may be stacked on one another with the redistribution conductive pads of the various units connected to one another.

Abstract: An integrated clock and power distribution network in a semiconductor device includes assigning a first tile to a location on a placement grid corresponding to a top metal layer. An orientation is assigned to the first tile relative to the top metal layer placement grid. The first tile is placed on a representation corresponding to the top metal layer in accordance with the assignments. A second tile is assigned to a location on a placement grid corresponding to a top-1 metal layer. The orientation is assigned to the second tile relative to the top-1 metal layer placement grid. The second tile is placed on a representation corresponding to the top-1 metal layer in accordance with the assignments. The first and second tile are arranged as a full-dense-mesh distribution structure. The first tile includes an integrated clock and power distribution structure. The second tile includes a low impedance underpass structure.

Abstract: A semiconductor device includes a first circuit block, a second circuit block, a first lead-out line coupled to the first circuit block, a second lead-out line coupled to the second circuit block, a first pad coupled to the first lead-out line, a second pad coupled to the second lead-out line, and a shielding line provided between the first lead-out line and the second lead-out line.

Abstract: A method for production of an integrated circuit arrangement which contains a capacitor. A dielectric layer is structured with the aid of a two-stage etching process, and with the aid of a hard mask. In the case of an electrically insulating hard mask, the hard mask is removed again. In the case of an electrically conductive hard mask, parts of the hard mask may remain in the circuit arrangement.

Abstract: A semiconductor package structure includes a carrier, a chip or multi-chips mounted on a top surface of the carrier, a molding compound encapsulating the top surface and the chips, a plurality of solder balls distributed on a bottom surface of the carrier, and a protection bar formed of thermosetting plastic material formed on the bottom surface.

Abstract: A die package generally including (A) ground paths routing a power ground from a ground power set of contact pads in a first conductive layer to a ground ring in a second conductive layer, (B) core paths routing a core voltage from a core power set of contact pads in the first conductive layer to a core ring in the second conductive layer, and (C) input/output voltage paths routing input/output voltages from an input/output power set of contact pads in the first conductive layer to an input/output ring in the second conductive layer, (i) the input/output ring surrounding the core ring, (ii) the ring being configured to power input and output circuits of the die, (iii) the input/output ring being split into ring segments isolated from each other and (iv) at least one particular ring segment having a length of less than a single connector pitch.

Abstract: A multi-chip package system is provided including providing a first carrier having a first integrated circuit die thereover, providing a second carrier, placing the first carrier coplanar with the second carrier, and molding a package encapsulation around and exposing the first carrier.

Abstract: A method and apparatus for applying a test signal to a node of a signal path of an integrated circuit using a parasitic capacitance of the integrated circuit associated with the node. For example, a parasitic capacitance associated with a bond pad may be used to apply a test signal to a signal path. Alternatively, a parasitic capacitance associated with a shielding element may be used to apply a test signal to the signal path.

Abstract: A semiconductor device is provided. The semiconductor device includes a chip having a plurality of first power voltage terminals connected in common to a first power voltage line, a plurality of second power voltage terminals connected in common with a second power voltage line, a first connection terminal, a second connection terminal connected to the first power voltage line or the second power voltage line, and an on-die capacitor.

Abstract: An interconnect and method of making the interconnect. The method includes forming a dielectric layer on a substrate, the dielectric layer having a top surface and a bottom surface; forming a first wire and a second wire in the dielectric layer, the first wire separated from the second wire by a region of the dielectric layer; and forming metallic nanoparticles in or on the top surface of the dielectric layer between the first and second wires, the metallic nanoparticles capable of electrically connecting the first wire and the second wire only while the nanoparticles are heated to a temperature greater than room temperature and a voltage is applied between the first and second wires.

Abstract: An integrated circuit substrate includes an integrated circuit chip having a plurality of electrically conductive pads on a surface thereof and a printed circuit board mounted to the integrated circuit chip. The printed circuit board includes an alternating arrangement of first and second electrically conductive bond fingers. These first and second bond fingers are elevated at first and second different heights, respectively, relative to the plurality of electrically conductive pads. The printed circuit board also includes a first plurality of electrically insulating pedestals supporting respective ones of the first electrically conductive bond fingers at elevated heights relative to the second electrically conductive bond fingers. First and second pluralities of electrical interconnects (e.g., wires, beam leads) are also provided.

Abstract: There is provided a semiconductor device including: plural bit cells each including the same circuit; plural electrodes supplied with power from outside, wherein each of the respective plural electrodes is mounted above the same circuit within the plural bit cells. Further, there is provided a semiconductor package including: the semiconductor device; a substrate mounted with the semiconductor device; an external input terminal formed on the substrate; an external output terminal formed on the substrate; an input wiring pattern connecting the semiconductor device mounted above the substrate and the external input terminal; an output wiring pattern connecting the semiconductor device mounted above the substrate and the external output terminal; and plural power supply lines, arranged without contact with each other on the same face of the substrate, and connecting the plural electrodes mounted to the semiconductor device to the corresponding electrode from the plural external power input electrodes.

Abstract: A semiconductor device comprises an IC chip body and a package substrate that has thereon many external electrodes arranged in a two-dimensional grid configuration. Groups of signal lines that are likely to emit noise (noisy signal lines) are separated and spaced apart from groups of signal lines that are susceptible to noise (noise susceptible signal lines). Each of the noisy signal lines and noise susceptible signal lines is connected to an associated member of an associated IC pad group separated and spaced apart from other IC pad groups. Further, each of the noisy signal lines and noise susceptible signal lines is connected to an associated member of an associated external electrode group selected from the multiplicity of external electrodes arranged in a two-dimensional grid configuration on the package substrate. Thus, groups of potentially interfering signal lines are mutually separated and spaced apart from one another, thereby suppressing the noise.

Abstract: Wiring of a PDP address driver IC is disclosed which affords an adequate permitted current capacity. In the PDP address driver IC that drives the PDP, a layer, in which a planar high voltage ground wiring layer and a planar high voltage power wiring layer are formed, is provided atop a layer in which planar high voltage ground wiring layers that supply a ground potential to the active element that is formed within the PDP address driver IC and in which planar high voltage power wiring layers that supply a source potential to the active element are formed. Accordingly, the PDP address driver IC can comprise an adequate permitted current capacity while maintaining a compact size and comprising a multiplicity of output bit portions.

Abstract: A buck converter module includes a high side (HS) die having source, drain, and gate bonding pads on a front side of the HS die, a low side (LS) die having a first section thereof with a plurality of through silicon vias (TSVs) extending from a back side to a front side of the LS die, the LS die having source, drain, and gate bonding pads located on a front side of a second section separate from the first section, the drain bonding pad electrically connected to the back side of the LS die in the second section. The HS die and the LS die are bonded together such that the source bonding pad of the HS die is electrically connected to the back side of the LS die, and each of the drain and gate bonding pads are electrically connected to separate TSVs in the LS die.

Abstract: Contacts having different characteristics may be created by forming a first silicide layer over a first device region of a substrate, and then forming a second silicide layer over a second device region while simultaneously further forming the first silicide layer. A first contact hole may be formed in a dielectric layer over a first device region of a substrate. A silicide layer may then be formed in the first contact hole. A second contact hole may be formed after the first contact hole and silicide layer is formed. A second silicidation may then be performed in the first and second contact holes.

Abstract: Disclosed herein is a dual face package and a method of manufacturing the same. The dual face package includes a semiconductor substrate including a through-electrode connected to a die pad disposed on one side of the semiconductor substrate, and a lower redistribution layer disposed on another side thereof and connected to the through-electrode, an insulating layer including a post electrode connected to the through-electrode, and an upper redistribution layer disposed on one side thereof and connected to the post electrode, and an adhesive layer disposed on the one side of the semiconductor substrate so as to attach the insulating layer to the semiconductor substrate such that the through-electrode is connected to the post electrode. The dual face package is produced by a simple process and is applicable to a large diameter wafer level package.

Abstract: One embodiment of the present invention provides advice for providing a low noise power supply package to an integrated circuit comprising a semiconductor die, input/output power supply terminals, and an array of embedded ceramic capacitors selected from discrete, planar and combinations thereof wherein said capacitors are placed in the locations selected from within the perimeter of the shadow of the semiconductor die, partially within the perimeter of the shadow of the semiconductor die, near the perimeter of the shadow of the semiconductor die, and combinations thereof.

Abstract: The point-to-point interconnection system for stacked devices includes a device, a substrate, operational circuitry, at least three electrical contacts and a conductor. The substrate has opposing first and second surfaces. A first electrical contact is mechanically coupled to the first surface of the device and electrically coupled to the operational circuitry. The second electrical contact is mechanically coupled to the first surface. The third electrical contact is mechanically coupled to the second surface opposite the first electrical contact. The conductor electrically couples the second electrical contact to the third electrical contact.

Abstract: An integrated power device includes a semiconductor body of a first conductivity type comprising a first region accommodating a start-up structure, and a second region accommodating a power structure. The two structures are separated from one another by an edge structure and are arranged in a mirror configuration with respect to a symmetry line of the edge structure. Both the start-up structure and the power structure are obtained using MOSFET devices. Both MOSFET devices are multi-drain MOSFET devices, having mesh regions, source regions and gate regions separated from one another. In addition, both MOSFET devices have drain regions delimited by columns that repeat periodically at a fixed distance. Between the two MOSFET devices there is an electrical insulation of at least 25 V.

Abstract: Patterned active layers formed by nano-imprint lithography for use in devices such as photovoltaic cells and hybrid solar cells. One such photovoltaic cell includes a first electrode and a first electrically conductive layer electrically coupled to the first electrode. The first conductive layer has a multiplicity of protrusions and recesses formed by a nano-imprint lithography process. A second electrically conductive layer substantially fills the recesses and covers the protrusions of the first conductive layer, and a second electrode is electrically coupled to the second conductive layer. A circuit electrically connects the first electrode and the second electrode.

Abstract: A driver module structure includes a flexible circuit board (2) provided with a wiring pattern (7), a semiconductor device mounted on the flexible circuit board (2), and an electrically conductive heat-radiating member (4) joined to the semiconductor device. The wiring pattern (7) includes a ground wiring pattern (8). The flexible circuit board (2) has a cavity (9) that exposes a portion of the ground wiring pattern (8). The exposed portion of the ground wiring pattern (8) and the heat-radiating member (4) are connected to establish electrical continuity via a member (11) that is fitted into the cavity (9).

Abstract: A power feed device for an electrical component which improves the quality of transmission and reduces the mounting density of a printed circuit board in the power feed device or reduces the thickness of the printed circuit board and thereby realizes smaller size, provided with a power supply for supplying power, a printed circuit board having built-in signal line patterns, and a power bar having conductive projections provided in shapes and at positions corresponding to the shapes and positions of electrodes of the electrical component and provided outside of the printed circuit board, power from the power supply being supplied through the conductive projections of the power bar to electrodes of the electrical component.

Abstract: A high-speed I/O trace is part of an I/O package architecture for an integrated circuit package substrate. The integrated circuit package substrate includes an integrated heat spreader footprint on a die-side and the I/O trace to couple with an IC device to be disposed inside the IHS footprint. The I/O trace includes a pin-out terminal outside the IHS footprint to couple to an IC device to be disposed outside the IHS footprint. The high-speed I/O trace can sustain a data flow rate from a processor in a range from 5 gigabits per second (Gb/s) to 40 Gb/s.

Abstract: An integrated circuit package system provides: forming a stack module including: providing a stack die and encapsulating the stack die with an insulating material having a protruding support and a pad connected to the stack die; mounting the stack module on a package base; connecting the pad to the package base; mounting a top die on the protruding support; connecting the top die to the package base; and encapsulating the top die, the package base, and the stack module with a package encapsulant.

Abstract: A power semiconductor device (1; 37) has a leadframe (4), at least one vertical power semiconductor component (2) and at least one further electronic device (3) which is arranged on the power semiconductor component (2). The chip carrier (5) of the leadframe (4) has at least two separate parts (7, 8) on which the power semiconductor component (2) is arranged. The power semiconductor component (2) is embodied such that the lower surface (28) of the first part (7) of the chip carrier (5) provides a ground contact area (36) of the power semiconductor component (2).

Abstract: A semiconductor device having a multilayer structure, each layer including: a dummy pattern for ensuring a flatness thereof; a pad area in which a bonding pad is formed; an input-output circuit area in which an input-output circuit is formed, the input-output circuit area being adjacent to the pad area in plan view; and a dummy pattern confined area for forbidding an arrangement of the dummy pattern in every layer included in the semiconductor device, the dummy pattern confined area being provided between the pad area and the input-output circuit area in plan view.

Abstract: The electrical characteristics of a semiconductor device are enhanced. In the package of the semiconductor device, there are encapsulated first and second semiconductor chips with a power MOS-FET formed therein and a third semiconductor chip with a control circuit for controlling their operation formed therein. The bonding pads for source electrode of the first semiconductor chip on the high side are electrically connected to a die pad through a metal plate. The bonding pad for source electrode of the second semiconductor chip on the low side is electrically connected to lead wiring through a metal plate. The metal plate includes a first portion in contact with the bonding pad of the second semiconductor chip, a second portion extended from a short side of the first portion to the lead wiring, and a third portion extended from a long side of the first portion to the lead wiring.

Abstract: The reliability of a semiconductor device is improved. A package of a semiconductor device internally includes a first semiconductor chip and a second semiconductor chip in which power MOS•FETs are formed and a third semiconductor chip in which a control circuit controlling the first and second semiconductor chips is formed. The first to third semiconductor chips are mounted on die pads respectively. Source electrode bonding pads of the first semiconductor chip on a high side are electrically connected with a first die pad of the die pads via a metal plate. On a top surface of the die pad 7D2, a plated layer formed in a region where the second semiconductor chip is mounted, and another plated layer formed in a region where the metal plate is joined are provided and the plated layers are separated each other with a region where no plated layer is formed in between.

Abstract: One embodiment of the present invention provides a system that facilitates high-bandwidth communication using a flexible bridge. This system includes a chip with an active face upon which active circuitry and signal pads reside, and a second component with a surface upon which active circuitry and/or signal pads reside. A flexible bridge provides high-bandwidth communication between the active face of the chip and the surface of the second component. This flexible bridge provides a flexible connection that allows the chip to be moved with six degrees of freedom relative to the second component without affecting communication between the chip and the second component. Hence, the flexible bridge allows the chip and the second component to communicate without requiring precise alignment between the chip and the second component.

Abstract: High density circuit modules are formed by stacking integrated circuit (IC) chips one above another. Unused input/output (I/O) locations on some of the chips can be used to connect other I/O locations, resulting in decreased impedance between the chips. Additional apparatus, systems, and methods are disclosed.

Abstract: An integrated circuit structure includes a semiconductor wafer; integrated circuit devices in the semiconductor wafer; and a plurality of test pads on a top surface of the semiconductor wafer and connected to the integrated circuit devices. Test pads are grouped in pairs, with the test pads in a same pair are interconnected.

Abstract: A liquid crystal display (LCD) panel simplifying its testing and manufacturing. The LCD panel includes (formed on a substrate) gate lines, data lines, and pixels including pixel transistors. The LCD panel further includes a plurality test transistors (e.g., data test transistors for driving the odd and even data lines) formed in a package region of a driving IC (integrated circuit) configured to drive the data lines. The plurality of test transistors may be selectively activated (turned ON) during testing before the driving integrated circuit (Driver IC package) is attached (e.g., fixed) to the driving IC package region. The LCD panel may further include a plurality of gate test transistors configured to drive the odd and even gate lines.

Abstract: Wiring is routed to assure insulation between wiring traces in a semiconductor integrated circuit device. The device includes a first wiring trace to which a prescribed voltage is supplied; a second wiring trace that takes on a voltage that exceeds the prescribed voltage; and a third wiring trace that only takes on a voltage less than the prescribed voltage. Alternatively, the device includes a first wiring trace to which a prescribed voltage is supplied; a second wiring trace that takes on a voltage less than the prescribed voltage; and a third wiring trace that takes on a voltage equal to or greater than the prescribed voltage. The wiring traces are routed at a certain wiring space in such a manner that the first wiring trace is interposed between the second and third wiring traces. The first wiring trace for which the potential difference is known to be small beforehand is routed so as to always be adjacent to the second wiring trace.

Abstract: A void that is created in a conductive electrode in a through hole that extends through an integrated circuit substrate can be used as a joining interface. For example, an integrated circuit structure includes an integrated circuit substrate having a conductive pad on a first face thereof, and a through hole that extends through the integrated circuit substrate from a second face of the integrated circuit substrate that is opposite to the first face and through the pad. A conductive electrode is provided in the through hole that extends from the second face to the first face through and onto the pad. The conductive electrode includes a void therein adjacent the second face. The void includes a void opening adjacent the second face that defines inner walls of the conductive electrode. A conductive material is provided in the void that directly contacts the inner walls of the conductive electrode. Related fabrication methods are also disclosed.

Abstract: A package circuit board having a reduced package size. The package circuit board may include a semiconductor substrate in place of a printed circuit board. The package circuit board may further include a microelectronic chip mounted on the semiconductor substrate, the microelectronic chip having at least one of active and passive elements formed on the semiconductor substrate semiconductor substrate.

Abstract: Techniques for interconnecting an IC chip and a receiving substrate are provided. A method includes the steps of: providing the IC chip, the IC chip including at least a first connection site formed thereon; providing the receiving substrate, the receiving substrate including at least a second connection site formed thereon; forming an alloy structure on at least a portion of an upper surface of the second connection site; orienting the IC chip relative to the receiving substrate so that the at least first connection site is aligned with the alloy deposit formed on the at least second connection site; and forming an electrical connection between the first and second connection sites, the electrical connection comprising a volume of electrically conductive fusible material, wherein a majority of the volume of electrically conductive fusible material is supplied from the alloy structure.