Abstract: An apparatus comprising at least one multilayer wafer which includes a device layer adjacent to a barrier layer, and the device layer includes at least two photoconductive regions separated by an etched channel extending through the device layer. In some instances the apparatus may be an accelerometer having two photodiodes formed on a silicon-on-insulator (SOI) wafer with the photodiodes defined by one or more etched channels extending through the device layer of the SOI wafer. Also disclosed are methods for forming such an apparatus.

Abstract: An LED assembly includes a packaged LED module (30) and a heat dissipation device (50). The LED module includes at least an LED die therein and a plurality of conductive pins (32, 34) extending downwardly from a bottom portion thereof. The heat dissipation device is thermally and electrically connected with the at least an LED die. The heat dissipation device defines at least a mounting hole (542) therein. At least one of the conductive pins is fittingly received in the at least a mounting hole and thermally and electrically connects with the heat dissipation device.

Abstract: A radiation-emitting semiconductor component having a radiation-transmissive substrate (1), on the underside of which a radiation-generating layer (2) is arranged, in which the substrate (1) has inclined side areas (3), in which the refractive index of the substrate (1) is greater than the refractive index of the radiation-generating layer, in which the difference in refractive index results in an unilluminated substrate region (4), into which no photons are coupled directly from the radiation-generating layer, and in which the substrate (1) has essentially perpendicular side areas (5) in the unilluminated region. The component has the advantage that it can be produced with a better area yield from a wafer.

Abstract: A method for photo-detecting and an apparatus for the same are provided. The apparatus for photo-detecting includes a first P-N diode and a second P-N diode. The first P-N diode, has a first P-N junction which has a first thickness, by which a first electrical signal is generated when irradiated by light, and the second P-N diode has a second P-N junction which has a second thickness, by which a second electrical signal is generated when irradiated by light. The second thickness is larger than the first thickness and an operation of the first electrical signal and the second electrical signal is proceeded for obtaining a third electrical signal.

Abstract: A semiconductor photodetector which can achieve spectral sensitivity characteristics close to relative luminous characteristics at low cost while using a light receiving element of a semiconductor made from such as silicon, has a semiconductor light receiving element having high spectral sensitivity in a wavelength range between approximately 400 nm to 1100 nm and an optical transmitting resin for sealing at least a light receiving surface of the semiconductor light receiving element. The optical transmitting resin is formed by dispersing metal boride micro particles whose particle diameter is not more than approximately 100 nm in a transparent resin and blocks light in wavelengths approximately 700 nm or above.

Abstract: An organic light emitting diode display may have a power supply line that is coplanar with a first pixel electrode of an organic light emitting element. The power supply line, first source and drain electrodes of a first thin film transistor (TFT), second source and drain electrodes of a second TFT, a data line, and an upper electrode of a storage capacitor constitute source/drain wire lines. In addition to the power supply line, any one(s) of or all of the source/drain wire lines may be coplanar with the first pixel electrode.

Abstract: A method of manufacturing of a photodiode is provided. The photodiode is formed on a substrate of a first conductive type. First, an isolation structure is formed in the substrate to define a photosensitive area in the substrate. Thereafter, trenches are formed in the substrate. Next, a doped layer of a second conductive type is formed on the substrate. The doped layer covers at least the inner wall of the trenches and a top portion of the substrate. The method of fabricating the photodiode can reduce overall processing time and cost and improve production efficiency.

Abstract: A light-emitting device operating on a high drive voltage and a small drive current. LEDs (1) are two-dimensionally formed on an insulating substrate (10) of e.g., sapphire monolithically and connected in series to form an LED array. Two such LED arrays are connected to electrodes (32) in inverse parallel. Air-bridge wiring (28) is formed between the LEDs (1) and between the LEDs (1) and electrodes (32). The LED arrays are arranged zigzag to form a plurality of LEDs (1) to produce a high drive voltage and a small drive current. Two LED arrays are connected in inverse parallel, and therefore an AC power supply can be used as the power supply.

Abstract: A nitride-based compound semiconductor light emitting device includes a first conductive substrate, a first ohmic electrode formed on the first conductive substrate, a bonding metal layer formed on the first ohmic electrode, a second ohmic electrode formed on the bonding metal layer, and a nitride-based compound semiconductor layer formed on the second ohmic electrode. The nitride-based compound semiconductor layer includes at least a P-type layer, a light emitting layer and an N-type layer, and has a concave groove portion or a concave-shaped portion.

Abstract: A photosensor includes a plurality of photosensitive regions including a first photosensitive region connected to a first voltage reference, and at least one additional photosensitive region. A signal collector is connected to the first photosensitive region. At least one switching device is for switching the at least one additional photosensitive region between the first voltage reference and a second voltage reference that is less than the first voltage reference, and for reversibly connecting the at least one additional photosensitive region to the signal collector so that the photosensor is variably responsive to different light levels.

Abstract: The present invention provides LTCC (low temperature co-fired ceramic) tape compositions and demonstrates the use of said LTCC tape(s) in the formation of Light-Emitting Diode (LED) chip carriers and modules for various lighting applications. The present invention also provides for the use of (LTCC) tape and LED modules in the formation of lighting devices including, but not limited to, LED devices, High Brightness (HB) LED backlights, display-related light sources, automotive lighting, decorative lighting, signage and advertisement lighting, and information display lighting.

Abstract: A method for forming a transparent electrode on a visible light-emitting diode is described. A visible light-emitting diode element is provided, and the visible light-emitting diode element has a substrate, an epitaxial structure and a metal electrode. The metal electrode and the epitaxial structure are located on the same side of the substrate, or located respectively on the different sides of the substrate. An ohmic metal layer is formed on a surface of the epitaxial structure. The ohmic metal layer is annealed. The ohmic metal layer is removed to expose the surface of the epitaxial structure. A transparent electrode layer is formed on the exposed surface. A metal pad is formed on the transparent electrode layer.

Abstract: A method of manufacturing a silicon optoelectronic device, a silicon optoelectronic device manufactured by the method and an image input and/or output apparatus having the silicon optoelectronic device are provided.

Abstract: A light emitting element includes: a box-shaped case formed by an insulation material and having a space inside; a lead frame formed by a conductive material and fixed to the case; and a light emitting chip fixed to the lead frame. On the lead frame, a rise portion is formed in a side wall of the case or along the inner surface of the side wall. The lead frame has a first lead frame fixing the light emitting chip and a second lead frame connected to the light emitting chip by the wire bonding. At least on the first lead frame, a rise portion is formed.

Abstract: A light emitting diode (LED) and a method for fabricating the same, capable of improving brightness by forming a InGaN layer having a low concentration of indium, and whose lattice constant is similar to that of an active layer of the LED, is provided. The LED includes: a buffer layer disposed on a sapphire substrate; a GaN layer disposed on the buffer layer; a doped GaN layer disposed on the GaN layer; a GaN layer having indium disposed on the GaN layer; an active layer disposed on the GaN layer having indium; and a P-type GaN disposed on the active layer. Here, an empirical formula of the GaN layer having indium is given by In(x)Ga(1-x)N and a range of x is given by 0<x<2, and a thickness of the GaN layer having indium is 50-200 ?.

Abstract: A multi-chip device includes LED sensors for sensing light separated by a predetermined interval in a wafer, LEDs for emitting light formed over the wafer respectively corresponding to the LED sensors, a driving circuit formed between the LEDs over the wafer, an insulating film over the wafer, and trenches in the insulating film exposign the LEDs.

Abstract: The present invention provides a system, method and apparatus for improved electrical-to-optical transmitters (100) disposed within printed circuit boards (104). The heat sink (110, 200) is a thermal conductive material disposed within a cavity (102) of the printed circuit board (104) and is thermally coupled to a bottom surface (112) of the electrical-to-optical transmitter (100). A portion of the thermal conductive material extends approximately to an outer surface (120, 122 or 124) of a layer (114, 116 or 118) of the printed circuit board (104). The printed circuit board may comprise a planarized signal communications system or an optoelectronic signal communications system. In addition, the present invention provides a method for fabricating the heat sink wherein the electrical-to-optical transmitter disposed within a cavity of the printed circuit board is fabricated. New methods for flexible waveguides and micro-mirror couplers are also provided.

Abstract: Image sensing devices and methods for fabricating the same are provided. An exemplary image sensing device includes a first substrate having a first side and a second side opposing each other. A plurality of image sensing elements is formed in the first substrate at the first side. A conductive via is formed through the first substrate, having a first surface exposed by the first substrate at the first side and a second surface exposed by the first substrate at the second side. A conductive pad overlies the conductive via at the first side and is electrically connecting the image sensing elements. A conductive layer overlies the conductive via at the second side and electrically connects with the conductive pad. A conductive bump is formed over a portion of the conductive layer. A second substrate is bonded with the first substrate at the first side.

Abstract: An active pixel using a photodiode with multiple species of N type dopants is disclosed. The pixel comprises a photodiode formed in a semiconductor substrate. The photodiode is an N? region formed within a P-type region. The N? region is formed from an implant of arsenic and an implant of phosphorus. Further, the pixel includes a transfer transistor formed between the photodiode and a floating node and selectively operative to transfer a signal from the photodiode to the floating node. Finally, the pixel includes an amplification transistor controlled by the floating node.

Abstract: A light emitting diode (LED) array with beam directors outputting a high-intensity collimated beam. The LED array is constructed from a substrate component on which the LEDs and necessary electronics are disposed and a director attachment having a plurality of beam directors. The beam directors have a unique structure that is designed to shape the light beam into a collimated form. The LEDs are arranged in a pattern on the substrate, and the beam directors are arranged within the director attachment to coincide with the LEDs. The substrate and the director attachment may be manufactured and processed as separate components; they are then affixed together for operation.

Abstract: An optical device includes: a base 10; an optical element chip 5 mounted on the base 10; an integrated circuit chip 50 bonded to the back surface of the optical element chip 5; and a transparent member (window member 6). An interconnect 12 is buried in the base 10. The interconnect 12 has an inner terminal portion 12a, an outer terminal portion 12b and an intermediate terminal portion 12c. Pad electrodes 5b on the optical element chip 5 are connected to the inner terminal portion 12a via bumps 8. Pad electrodes 50b on the integrated circuit chip 50 are connected to the intermediate terminal portion 12c via fine metal wires 52. The integrated circuit chip 50 equipped with peripheral circuits and other circuits and the optical element chip 5 are combined into one package.

Abstract: A light emitting diode structure has a silicon substrate, a conductive layer, and a light emitting diode. The top surface of the silicon substrate has a cup-structure like paraboloid, and the bottom of the cup-structure has a plurality of through-holes penetrating the silicon substrate. The conductive layer fills up the through-holes and protrudes out from the through-holes. The light emitting diode is disposed on the top of the conductive layer protruding out from the through-holes and is located at the focus of the cup-structure.

Abstract: An electrostatic discharge (ESD) protected semiconductor device. The semiconductor device is formed as a monolithic structure. The monolithic structure includes a vertical cavity surface emitting laser (VCSEL) and a protection diode. The protection diode cathode is electrically coupled to the VCSEL anode and the protection diode anode is electrically coupled to the VCSEL cathode so as to provide ESD protection to the VCSEL.

Abstract: Light-emitting devices, and related components, systems and methods are disclosed.

Abstract: The present invention provides a receiving optical subassembly (ROSA) with a co-axial shape and a stem for mounting semiconductor devices thereon that improves the high frequency performance of the ROSA. The ROSA mounts a photodiode (PD) and a pre-amplifier on a stem and the stem has a hollow the PD and the pre-amplifier are mounted therein. Since the hollow has a depth substantially equal to a thickness of the pre-amplifier, the bonding wire from the pre-amplifier to the surface of the stem may become shortest to reduce the parasitic inductance of the bonding wire and to enhance the high frequency performance of the ROSA.

Abstract: Light-emitting devices, and related components, systems and methods are disclosed.

Abstract: Disclosed is a light emitting diode (LED) for enhancing the current spreading performance. The LED includes a plurality of contact holes exposing an N-type semiconductor layer through a P-type semiconductor layer and an active layer, and a connection pattern electrically connecting exposed portions of the N-type semiconductor layer through the contact holes, thereby enhancing current spreading in the N-type semiconductor layer. In addition, disclosed is an LED including a plurality of light emitting cells spaced apart from one another on an N-type semiconductor layer and an N-contact layer between the light emitting cells. A plurality of light emitting cells are employed in the LED, so that current can be spread in the LED.

Abstract: A method for fabricating an active-matrix organic electroluminescent (OEL) display panel is described. A transparent conductive layer is formed on a substrate as a common anode for all organic light emitting diodes (OLED), and a passivation layer is formed on the transparent conductive layer. Thin film transistors are formed on the passivation layer to serve as an active matrix, and openings are formed in the passivation layer to expose portions of the transparent conductive layer and define pixel regions. An organic function layer is formed in each opening, and a metal electrode layer is formed on each organic function layer, wherein the metal electrode layer is electrically connected with the drain of the corresponding thin film transistor.

Abstract: A method of a fabricating a multiple wavelength adapted photodiode and resulting photodiode includes the steps of providing a substrate having a first semiconductor type surface region on at least a portion thereof, implanting and forming a second semiconductor type shallow surface layer into the surface region, and forming a multi-layer anti-reflective coating (ARC) on the shallow surface layer. The forming step includes depositing or forming a thin oxide layer on the shallow surface layer and depositing a second dielectric layer different from the thin oxide layer on the thin oxide layer. An etch stop is formed on the second dielectric, wherein the etch stop includes at least one layer resistant to oxide etch. At least one oxide including layer (e.g. ILD) is then deposited on the etch stop. The oxide including layer and etch stop are then removed to expose at least a portion of the ARC to the ambient.

Abstract: A semiconductor package having an optical device and the method of making the same, includes a transparent substrate, a chip, an optical device and a carrier substrate. The transparent substrate has a plurality of first contacts and second contacts, wherein the first contacts are electrically connected to the second contacts. The chip is connected to the transparent substrate and forms a gap therebetween. The chip has a plurality of third contacts that are electrically connected to the first contacts. The optical device is disposed in the gap. The carrier substrate has a receiving space and a plurality of fourth contacts, wherein the receiving space accommodates the chip and the optical device, and the fourth contacts are electrically connected to the second contacts of the transparent substrate. Therefore, no connecting wires are needed and the step of wire bonding is omitted. Also, only one transparent substrate is used in the semiconductor package.

Abstract: A method of making a light emitting diode (LED) is disclosed. The LED of the present invention comprises a semiconductor layer of a first polarity, an active layer, and a semiconductor layer of a second polarity stacked from bottom to up, wherein a stacked structure at least composed of the active layer and the semiconductor layer of the second polarity have a side with a wave-shape border in a top view of the LED and/or at least one valley, thereby increasing the efficiency of emitting the light to the outside of the LED.

Abstract: A light emitting device has a cup portion with a bottom surface opening, and one electrode of a light emitting element is connected to the cup portion. The other electrode of the light emitting element is connected to a lead set up from an inner space to outside the cup portion using the opening of the cup portion. Each electrode and lead of the light emitting device can be electrically connected without bonding wires. This prevents shadows or light unevenness from reflecting the shape of the bonding wire, thereby enhancing light-emission efficiency. As an alternative to setting up the lead from inside to the outside of the cup portion, the lead existing outside the cup portion and the other electrode are electrically connected via the bonding wire through the cup portion's opening. Thus, light outputted outside of the light emitting device is not intercepted by the bonding wire.

Abstract: It is to be made easy to arrange light emitting diodes, each including a lens having a hemispherical light emitting surface, and cover the base of the light emitting diodes with resin material. A light emitting diode 1 has a light emitting element 2, a lead section 3 that supplies power to the light emitting element 2, a base 4 that covers the lead section 3, a lens 5 having a convex light emitting surface and connected to the base 4 to cover the light emitting element 2, and a step section 6 disposed such that it surrounds the outer side of the lens 5, part of the step 6 having a different width. The step section 6 has a height that defines the amount of resin material enough to cover the lead section 3. There is also provided a light emitting diode display device 10 using a plurality of such light emitting diodes.

Abstract: A semiconductor light-emitting device is provided. The semiconductor light-emitting device includes a laminated semiconductor structure portion composed of at least a first conductivity type first cladding layer, an active layer and a second conductivity type second cladding layer, wherein an outer peripheral surface of this laminated semiconductor structure portion is formed as a curved surface shape which is protrusively curved or bent with respect to the outside of the laminated direction.

Abstract: The invention includes a die-level opto-electronic device with a semiconductor die and a photonic device including a conductive structure formed in the die away from the edges of the die. The conductive structure is electrically connected to the photonic device. The device also includes an optically transparent laminate attached to overlay the photonic device. The invention also comprises a semiconductor wafer with a plurality of photonic devices exposed on a first surface and a plurality of conductive structures being exposed on a second surface opposing the first surface. The conductive structures are electrically connected to the photonic devices which are overlaid with an optically transparent laminate. The invention further includes methods of forming die-level opto-electronic devices and semiconductor wafers.

Abstract: A structure of light emitting diode (LED) effectively reduces its spectral width. The LED structure is applied in a three color mixing of a backlight module to broaden a color space and to improve a saturation of a color display. A grating structure is used as a waveguide layer to coordinate with the LED structure. The present invention does not affect the original thermo and electrical characteristics of the LED structure and has a simple fabrication method.

Abstract: The manufacturing method of a semiconductor device according to the present invention comprises steps of forming a metal film, an insulating film, and an amorphous semiconductor film in sequence over a first substrate; crystallizing the metal film and the amorphous semiconductor film; forming a first semiconductor element by using the crystallized semiconductor film as an active region; attaching a support to the first semiconductor element by using an adhesive; causing separation between the metal film and the insulating film; attaching a second substrate to the separated insulating film; separating the support by removing the adhesive; forming an amorphous semiconductor film over the first semiconductor element; and forming a second semiconductor element using the amorphous semiconductor film as an active region.

Abstract: A vertical GaN-based LED and a method of manufacturing the same are provided. The vertical GaN-based LED includes an n-electrode, a first n-type GaN layer, a first AlGaN layer, a GaN layer, a second AlGaN layer, a second n-type GaN layer, an active layer, a p-type GaN layer, and a structure support layer. The first n-type GaN layer has uneven patterns having a plurality of protuberances. The first AlGaN layer is formed under the first n-type GaN layer, and the GaN layer is formed under the first AlGaN layer. The active layer is formed under the second n-type GaN layer, and the p-type GaN layer is formed under the active layer. A p-electrode is formed under the p-type GaN layer, and the structure support layer is formed under the p-electrode.

Abstract: A CMOS image sensor-manufacturing method includes forming a photodiode on a substrate, forming an insulating layer over the substrate, forming a contact hole in the insulating layer, and forming a gate terminal over the insulating layer. The gate terminal is connected to the photodiode through the contact hole.

Abstract: A optoelectronic semiconductor device, mountable on and electrically connectable to an electro-optical wiring board, a substrate thereof having a light input/output through-hole and electric connection through-holes, the light input/output through-hole being not formed in a stressed area of the circuit wiring board, but formed in a non-stressed area of the circuit wiring board, the stressed area being an area where a stress is larger in value than the mean value of stresses caused in the circuit wiring board by a difference in coefficient of thermal expansion between the circuit wiring board and the electro-optical wiring board when the electrode on the semiconductor optoelectronic device is mechanically fixed to and electrically connected to the electro-optical wiring board.

Abstract: An image sensor module with a protection layer and a method for manufacturing the same includes a substrate with an upper surface and a lower surface, a chip is mounted on the upper surface of the substrate, a plurality of wires are electrically connected the bonding pads of the chip to the first electrodes of the substrate, a adhered layer is coated on the upper surface of the substrate, a lens holder has a lateral wall, a protection layer and internal thread, the lateral wall is adhered on the upper surface of the substrate by the adhered layer to encapsulate the chip, so that the protection layer is located on adjacent the sensor region of the chip to prevent adhered layer flowed to the sensor region of the chip; and a lens barrel is formed with external thread screwed on the internal thread of the lens holder.

Abstract: An image sensor in which a plurality of pixels having at least a photodiode, a reset transistor, and source follower transistor are formed, wherein each pixel comprises an electrical-charge transfer gate transistor between the photodiode and reset transistor, and a floating diffusion region constituting a node connecting the reset transistor and transfer gate transistor is connected to the gate of the source follower transistor. Further, a photodiode region is embedded below a well region in which the reset transistor and source follower transistor of each pixel are formed. In addition, the photo diode region is not formed below at least a partial region of the floating diffusion region.

Abstract: The invention proposes a housing for at least two radiation-emitting components, particularly LEDs, comprising a system carrier (1) and a reflector arrangement (2) disposed on said system carrier (1), the reflector arrangement comprising a number of reflectors each of which serves to receive at least one radiation-emitting component and which are fastened to one another by means of a holding device (4).

Abstract: A display substrate includes a first metal pattern, a first insulating layer, a first electrode, and a second metal pattern. The first metal pattern includes a gate line and a signal line. The first insulating layer is disposed on a substrate having the first metal pattern formed thereon. A first opening passes through the first insulating layer to partially expose the signal line. The first electrode is disposed on the first insulating layer corresponding to a unit pixel. The second metal pattern includes a connection electrode contacting the first electrode and the signal line through the first opening and a data line.

Abstract: A light source apparatus and a fabrication method thereof can prevent light interference between light emitting devices adjacent to each other by forming a groove in a sub-mount and bonding a light emitting device to the groove, enhance heat radiating effect as well as luminous efficiency by collecting light emitted from the side of the light emitting device toward the front of the light source apparatus, reduce the process time and costs and increase reliability by directly connecting the sub-mount to the stem by the first electrode and the second electrode which pass through holes of the sub-mount, and extend a life span of the light emitting device because of the enhanced heat radiating effect.

Abstract: A method of fabricating a vertical structure opto-electronic device includes fabricating a plurality of vertical structure opto-electronic devices on a crystal substrate, and then removing the substrate using a laser lift-off process. The method then fabricates a metal support structure in place of the substrate. In one aspect, the step of fabricating a metal support structure in place of the substrate includes the step of plating the metal support structure using at least one of electroplating and electro-less plating. In one aspect, the vertical structure is a GaN-based vertical structure, the crystal substrate includes sapphire and the metal support structure includes copper. Advantages of the invention include fabricating vertical structure LEDs suitable for mass production with high reliability and high yield.

Abstract: An apparatus comprising at least one multilayer wafer includes a device layer adjacent to a barrier layer, and the device layer includes at least two photoconductive regions separated by an etched channel extending through the device layer. In some instances the apparatus may be an accelerometer having two photodiodes formed on a silicon-on-insulator (SOI) wafer with the photodiodes defined by one or more etched channels extending through the device layer of the SOI wafer. Also disclosed are methods for forming such an apparatus.

Abstract: Disclosed is a lighting device with flipped side-structure of LEDs, which allows emitted lights to travel in parallel with the mounting surface. Single or plural LED chips are mounted on a substrate with their side surfaces facing the substrate surface. The lighting device can be further combined with optical protrusions on the substrate to form a light module for reflecting and mixing lights emitted from the LED chips. It does not require a conventional wire bonding process. The packaging structure also resolves the heat dissipation problem of the LEDs. Electrostatic discharge protection circuits can be included in the light module if desired. The invention achieves good uniformity and high intensity of the combined lights with desired chromaticity.

Abstract: A method is provided for forming semiconductor devices using a semiconductor substrate having first and second opposed sides, and at least one device layer on the second side of the substrate, the at least one device layer including first and second device portions. A first trench is formed in the first side of the substrate between the first and second device portions. A second trench is formed in the second side of the substrate between the first and second device portions.

Abstract: A white-light emitting device includes a first die and a second die. The first die has a first semiconductor light-emitting layer emitting a first primary color light. The second die has a second semiconductor light-emitting layer emitting a second primary color light, and a third semiconductor light-emitting layer mounted proximate to the second semiconductor light-emitting layer and emitting a third primary color light. The first primary color light is combined with the second and third primary color lights so as to produce white light.