Abstract: An LED assembly includes a substrate and a plurality of LEDs mounted on the substrate. Each LED comprises an LED die, a base supporting the LED die thereon and thermally contacting the substrate to take heat generated by the LED die to the substrate, a pair of leads electrically connecting the LED die to input a current to the LED die, and an encapsulant enveloping the LED die. The pair of leads hover above the substrate to separate an electrical route of the LED assembly from a heat conducting pathway thereof. Furthermore, each LED has a plurality of legs extending radially from the base thereof to fit in the base of an adjacent LED, to thereby engagingly lock with the adjacent LED.

Abstract: Light-emitting devices, light-emitting apparatuses, image display apparatuses and methods of manufacturing same are provided. The devices and apparatuses include a transparent electrode that is connected directly to light output surfaces so as to cover the whole areas of the light output surfaces. The transparent electrode is formed to be larger in area than the light output surfaces, and are securely electrically connected to n-type semiconductor layers including the light output surfaces.

Abstract: There is provided a light emitting device that can minimize reflection or absorption of emitted light, maximize luminous efficiency with the maximum light emitting area, enable uniform current spreading with a small area electrode, and enable mass production at low cost with high reliability and high quality. A light emitting device according to an aspect of the invention includes a light emitting lamination including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer, and a conductive substrate at one surface thereof. Here, the light emitting device includes a barrier unit separating the light emitting lamination into a plurality of light emitting regions, a first electrode structure, and a second electrode structure. The first electrode structure includes a bonding unit, contact holes, and a wiring unit connecting the bonding unit to the contact holes.

Abstract: An (Al, Ga, In)N light emitting diode (LED) in which multi-directional light can be extracted from one or more surfaces of the LED before entering a shaped optical element and subsequently being extracted to air. In particular, the (Al, Ga, In)N and transparent contact layers (such as ITO or ZnO) are embedded in or combined with a shaped optical element, which may be an epoxy, glass, silicon or other material molded into a sphere or inverted cone shape, wherein most of the light entering the inverted cone shape lies within a critical angle and is extracted. The present invention also minimizes internal reflections within the LED by eliminating mirrors and/or mirrored surfaces, in order to minimize re-absorption of the LED's light by the emitting layer (or the active layer) of the LED. To assist in minimizing internal reflections, transparent electrodes, such as ITO or ZnO, may be used. Surface roughening by patterning or anisotropically etching (i.e.

Abstract: A light emitting diode with improved light collimation comprises a substrate-supported LED die disposed within a transparent dome. A portion of the dome laterally circumscribe the die comprises light reflecting material to reflect emitted light back to the die. A portion of the dome centrally overlying the die is substantially free of light reflecting material to permit exit of light within a desired radiation pattern. The LED die may be packaged for high temperature operation by disposing them on a ceramic-coated metal base which can be coupled to a heat sink. The packaged LED can be made by the low temperature co-fired ceramic-on-metal technique (LTCC-M).

Abstract: Disclosed are packages for optocouplers and methods of making the same. An exemplary optocoupler comprises a substrate having a first surface and a second surface, a plurality of optoelectronic dice for one or more optocouplers disposed on the substrate's first surface, and a plurality of optoelectronic dice for one or more optocouplers disposed on the substrate's second surface. The substrate may comprise a pre-molded leadframe, and electrical connections between optoelectronic dice on opposite surfaces of the substrate may be made via one or more leads of the leadframe.

Abstract: A light-emitting device comprises first and second dot members. The first dot member is formed so that it makes contact with the second dot member. The first dot member comprises a plurality of first quantum dot layers. Each of the plurality of first quantum dot layers comprises a plurality of first quantum dots and a silicon dioxide film. The first quantum dot comprises an n-type silicon dot. The second dot member comprises a plurality of second quantum dot layers. Each of the plurality of second quantum dot layers comprises a plurality of second quantum dots and a silicon dioxide film. The second quantum dot comprises a p-type silicon dot.

Abstract: An exemplary LED includes a substrate, an LED chip, a light pervious encapsulation, and an auxiliary electric component. The substrate includes a first surface, an opposite second surface, and an accommodating space defined therein between the first surface and the second surface. The LED chip is mounted on the first surface of the substrate. The light pervious encapsulation is formed on the substrate and covers the LED chip. The auxiliary electric component is received in the accommodating space between the first and second surfaces of the substrate.

Abstract: An image sensor can include a first substrate, an insulating layer, a photodiode, and a via plug. A circuitry including an interconnection can be formed on the first substrate. The insulating layer is formed over the first substrate so that the insulating layer covers the interconnection. The photodiode is formed in a crystalline semiconductor layer and then bonded to the first substrate while contacting the insulating layer. The via plug is provided by removing portions of the photodiode and the insulating layer to expose an upper portion of the interconnection to form a via hole, and filling the via hole with a conductive metal. The via plug electrically connects the photodiode to the interconnection.

Abstract: An object of the present invention is to provide a gallium nitride-based compound semiconductor light-emitting device having a reflective positive electrode configured to achieve excellent light extraction efficiency. The inventive gallium nitride-based compound semiconductor light-emitting device has a gallium nitride-based compound semiconductor layer structure comprising an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer, on a substrate, wherein a positive electrode provided on the p-type semiconductor layer is a reflective positive electrode comprising a transparent material layer and a reflective metal layer formed on the transparent material layer.

Abstract: A semiconductor layer containing defects only in a small density, possessing good quality and exhibiting a large ionic bonding property as to GaN, for example, is formed on a semiconductor layer, such as a silicon carbide layer, which is made of a material possessing a small ionicity and exhibiting a strong covalent bonding property. A method for forming a semiconductor layer includes forming on the surface of a first semiconductor layer 102 possessing a first ionicity a second semiconductor layer 103 possessing a second ionicity larger than the first ionicity. The second semiconductor layer 103 is formed while irradiating the surface of the first semiconductor layer existing on the side for forming the second semiconductor layer with electrons in a vacuum.

Abstract: An optical device with a CAN package is disclosed, where the cap is resistance-welded to the stem without causing failures due to fragments by the welding flying within the package. The cap of the invention has a flange portion to be welded to the stem. The flange portion provides a ringed groove in addition to the ringed projection for the welding. The fragment due to the welding may be captured in the ringed groove and is prevented from flying within the package. The ringed groove and the ringed projection are simultaneously formed in the stamping to form the body portion of the cap.

Abstract: An improved method of forming a LED with a roughened surface is described. Traditional methods of roughening a LED surface utilizes strong etchants that require sealing or protecting exposed areas of the LED. The described method uses a focused laser to separate the LED from the substrate, and a second laser to roughen the LED surface thereby avoiding the use of strong etchants. A mild etchant may be used on the laser roughened LED surface to remove unwanted metals.

Abstract: The invention discloses a semiconductor light-emitting device and a method of fabricating the same. The semiconductor light-emitting device according to the invention includes a substrate, a first semiconductor material layer, a multi-layer structure and an ohmic electrode structure. The substrate has a first upper surface and a plurality of recesses formed on the first upper surface. The first semiconductor material layer is formed on the first upper surface of the substrate and has a second upper surface. The multi-layer structure is formed on the second upper surface of the first semiconductor material layer and includes a light-emitting region. The ohmic electrode structure is formed on the multi-layer structure. In particular, the first semiconductor material layer has a refractive index different from those of the substrate and a bottom-most layer of the multi-layer structure.

Abstract: A light emitting device and method of producing the same is disclosed. The light emitting device includes a heterostructure having a plurality of light emitting diodes (LEDs) stacked one on top of another.

Abstract: Light-emitting devices are provided that incorporate one or more underlying LED chips or other light sources and a layer having one or more populations of nanoparticles disposed over the light source. The nanoparticles may absorb some light emitted by the underlying source, and re-emit light at a different level. By varying the type and relative concentration of nanoparticles, different emission spectra may be achieved. White light and specialty-color emission may be achieved. Devices also may include multiple LED chips, with nanoparticles disposed over one or more underlying chips in an array.

Abstract: Light-emitting devices, and related components, systems and methods are disclosed.

Abstract: A semiconductor chip that has a photodiode formed on it, a semiconductor device including the semiconductor chip, and manufacturing methods thereof. A second semiconductor region 11 is formed in light-receiving region R of first semiconductor region 10. First bumps 12 are formed outside light-receiving region R. Second bump 13 is formed in a ring-shape around light-receiving region R between region R and first bumps 12. Semiconductor chip T is assembled on assembly substrate S, and resin layer 30 is formed between chip T and substrate S in the region outside of said light-receiving region R.

Abstract: The point-to-point interconnection system for stacked devices includes a device, a substrate, operational circuitry, at least three electrical contacts and a conductor. The substrate has opposing first and second surfaces. A first electrical contact is mechanically coupled to the first surface of the device and electrically coupled to the operational circuitry. The second electrical contact is mechanically coupled to the first surface. The third electrical contact is mechanically coupled to the second surface opposite the first electrical contact. The conductor electrically couples the second electrical contact to the third electrical contact.

Abstract: A theme is to prevent the generation of noise due to damage in a photodetecting portion in a mounting process in a photodiode array, a method of manufacturing the same, and a radiation detector. In a photodiode array, wherein a plurality of the photodiodes (4) are formed in array form on the surface at a side of the n-type silicon substrate (3) onto which light to be detected is made incident and the penetrating wirings (8), which pass through from the incidence surface side to the back surface side, are formed for the photodiodes (4), the photodiode array (1) is arranged with the spacer (6), having a predetermined planar pattern, provided at non-forming regions of the incidence surface side at which the photodiodes (4) are not formed.

Abstract: A CMOS image sensor includes a photodiode, and a plurality of transistors for transferring charges accumulated at the photodiode to one column line, wherein at least one transistor among the plurality of transistors has a source region wider than a drain region, for increasing a driving current.

Abstract: An object of the invention is to provide a lighting device which can suppress luminance nonuniformity in a light emitting region when the lighting device has large area. A layer including a light emitting material is formed between a first electrode and a second electrode, and a third electrode is formed to connect to the first electrode through an opening formed in the second electrode and the layer including a light emitting material. An effect of voltage drop due to relatively high resistivity of the first electrode can be reduced by electrically connecting the third electrode to the first electrode through the opening.

Abstract: In one embodiment of an epitaxial LED device, a buffer layer (e.g. dielectric layer) between the current spreading layer and the substitute substrate includes a plurality of vias and has a refractive index that is below that of the current spreading layer. A reflective metal layer between the buffer layer and the substitute substrate is connected to the current spreading layer through the vias in the buffer layer. The buffer layer separates the current spreading layer from the reflective metal layer. In yet another embodiment, stress management is provided by causing or preserving stress, such as compressive stress, in the LED so that stress in the LED is reduced when it experiences thermal cycles.

Abstract: An AlGaInP based light emitting diode is provided with a distributed Bragg reflector comprising a combination of an AlGaAs layer and an AlInP layer, each having a film thickness determined by following formulas (1) to (3): t1={?0/(4×n1)}×???(1), t2={?0/(4×n2)}×(2??)??(2), and 0.5<?<0.9??(3) wherein t1 is a film thickness [nm] of the AlGaAs layer, t2 is a film thickness [nm] of the AlInP layer, ?0 is a wavelength [nm] of a light to be reflected, n1 is a refractive index of the AlGaAs layer to the wavelength of the light to be reflected, and n2 is a refractive index of the AlInP layer to the wavelength of the light to be reflected.

Abstract: A bonding pad structure for an optoelectronic device. The bonding pad structure comprises a carrier substrate having a bonding pad region and an optoelectronic device region. An insulating layer is disposed on the carrier substrate, having an opening corresponding to the bonding pad region. A bonding pad is embedded in the insulating layer under the opening to expose the top surface thereof. A device substrate is disposed on the insulating layer corresponding to the optoelectronic device region. A cap layer covers the device substrate and the insulating layer excluding the opening. A conductive buffer layer is disposed in the opening to directly contact the bonding pad. The invention also discloses a method for fabricating the same.

Abstract: A light source having a circuit carrier and a die is disclosed. The circuit carrier includes top and bottom conducting layers sandwiching an insulating substrate. The bottom layer has a first surface adjacent to the insulating substrate and a second surface includes a portion of a bottom surface of the light source, the substrate having a die bonding region in which the top conducting layer and a portion of the substrate are absent. A portion of the bottom conducting layer is present under the die bonding region and the die is bonded to the top surface of the bottom conducting layer in the die bonding region. The bottom conducting layer is patterned to provide first and second bottom electrodes that are electrically isolated from one another and connected to first and second contacts for powering the LED.

Abstract: A photoelectric conversion device comprising a semiconductor substrate of a first conduction type, and a photoelectric conversion element having an impurity region of the first conduction type and a plurality of impurity regions of a second conduction type opposite to the first conduction type. The plurality of second-conduction-type impurity regions include at least a first impurity region, a second impurity region provided between the first impurity region and a surface of the substrate, and a third impurity region provided between the second impurity region and the surface of the substrate. A concentration C1 corresponding to a peak of the impurity concentration in the first impurity region, a concentration C2 corresponding to a peak of the impurity concentration in the second impurity region and a concentration C3 corresponding to a peak of the impurity concentration in the third impurity region satisfy the following relationship: C2<C3<C1.

Abstract: An optoelectric composite substrate includes a substrate, a light emitting element positioned on the substrate, and a lens mold positioned on the light emitting element and contacting at least a part of the substrate, wherein the lens mold includes a lens element, the lens element positions so as to overlap an emitting surface of the light emitting element, and a distance between the light emitting element and the lens element is greater than a range of a Fresnel region of the light emitting element.

Abstract: Green light emitting diodes (LED) of gallium arsenide (GaAs) are series-connected. The series connection has a small transmission attenuation and a wide bandwidth. The GaAs LED has a big forward bias and so neither extra driving current nor complex resonant-cavity epitaxy layer is needed. Hence, the present invention has a high velocity, a high efficiency and a high power while an uneven current distribution is avoided.

Abstract: CMOS image sensor and method for fabricating the same, the CMOS image sensor including a second conductive type semiconductor substrate having an active region and a device isolation region defined therein, wherein the active region has a photodiode region and a transistor region defined therein, a device isolating film in the semiconductor substrate of the device isolation region, a first conductive type impurity region in the semiconductor substrate of the photodiode region, the first conductive type impurity region being spaced a distance from the device isolation film, and a second conductive type first impurity region in the semiconductor substrate between the first conductive type impurity region and the device isolation film, thereby reducing generation of a darkcurrent at an interface between the photodiode region and a field region.

Abstract: There is provided an imager package including an image sensor die attached to a transparent substrate such that sensitive image sensing components on the sensor die face the transparent substrate. In accordance with an embodiment of the present technique, the imager package may be coupled to an external package via bond wires and other interconnect elements. The sensor die and bond wires may be protected by an encapsulant on which the interconnect elements may be disposed. The bond wires may enable placement of the interconnect elements partially or directly above the sensor die, as opposed to around an outer periphery of the sensor die. There is further provided a method of manufacturing an imager package wherein interconnect elements may be located partially or directly above the sensor die, enabling the manufacture of smaller imager packages than previously envisioned.

Abstract: A method of manufacturing a silicon optoelectronic device, a silicon optoelectronic device manufactured by the method, and an image input and/or output apparatus having the silicon optoelectronic device are provided. The method includes: preparing an n-type or p-type silicon-based substrate; forming a polysilicon in one or more regions of the surface of the substrate; oxidizing the surface of the substrate where the polysilicon is formed, to form a silicon oxidation layer on the substrate, and forming a microdefect flection pattern at the interface between the substrate and the silicon oxidation layer, wherein the microdefect flection pattern is formed by the oxidation accelerated by oxygen traveling through boundaries of the grains in the polysilicon; exposing the microdefect flection pattern by etching the silicon oxidation layer; and forming a doping region by doping the exposed microdefect flection pattern with a dopant of the opposite type to the substrate.

Abstract: An LED chip package structure using a ceramic material as a substrate includes a ceramic substrate, a conductive unit, a hollow ceramic casing, a plurality of LED chips, and a package colloid. The ceramic substrate has a main body, and a plurality of protrusions extended from three faces of the main body. The conductive unit has a plurality of conductive layers formed on the protrusions, respectively. The hollow casing is fixed on a top face of the main body to form a receiving space for exposing a top face of each conductive layer. The LED chips are received in the receiving space, and each LED chip has a positive electrode side and a negative electrode side respectively and electrically connected to different conductive layers. In addition, the packaging colloid is filled into the receiving space for covering the LED chips.

Abstract: An image sensor having pixels that include two patterned semiconductor layers. The top patterned semiconductor layer contains the photoelectric elements of pixels having substantially 100% fill-factor. The bottom patterned semiconductor layer contains transistors for detecting, resetting, amplifying and transmitting signals charges received from the photoelectric elements. The top and bottom patterned semiconductor layers may be separated from each other by an interlayer insulating layer that may include metal interconnections for conducting signals between devices formed in the patterned semiconductor layers and from external devices.

Abstract: An organic electroluminescent device, which, on a substrate, has a plurality of first electrodes, and a second electrode opposing the plurality of first electrodes. The organic electroluminescent device also including a light-emitting functional layer between the second electrode and one of the first electrodes and a buffering layer that covers the second electrode. The buffering layer having a side end portion with an angle equal to or less than 30°. The organic electroluminescent device further including a gas barrier layer that covers the buffering layer.

Abstract: A package of a semiconductor device with a flexible wiring substrate and a method thereof are provided. The package of the semiconductor device includes a semiconductor substrate with at least one pad on a surface thereof, a bump bonded to the pad, an adhesive layer on the bump, and a flexible wiring substrate having at least one contact section being electrically connected with the bump by the adhesive layer. The present invention makes the flexible wiring substrate directly conductively attached onto the semiconductor substrate. The package size is shrunk and the cost down can be obtained.

Abstract: An LED has a light-generating semiconductor region formed on a baseplate via a metal-made reflector layer. The light-generating semiconductor region has an active layer sandwiched between a pair of claddings of opposite conductivity types. An annular marginal space is left around the reflector layer between the light-generating semiconductor region and the substrate. In order to preclude the thermal migration of the reflector metal onto the side surfaces of the light-generating semiconductor region, with a possible short-circuiting of the pair of claddings across the active layer, an anti-migration seal is received in the annular marginal space created around the reflector layer between the light-generating semiconductor region and the baseplate.

Abstract: An optoelectronics chip-to-chip interconnects system is provided, including at least one packaged chip to be connected on the printed-circuit-board with at least one other packaged chip, optical-electrical (O-E) conversion mean, waveguide-board, and (PCB). Single to multiple chips interconnects can be interconnected provided using the technique disclosed in this invention. The packaged chip includes semiconductor die and its package based on the ball-grid array or chip-scale-package. The O-E board includes the optoelectronics components and multiple electrical contacts on both sides of the O-E substrate. The waveguide board includes the electrical conductor transferring the signal from O-E board to PCB and the flex optical waveguide easily stackable onto the PCB to guide optical signal from one chip-to-other chip. Alternatively, the electrode can be directly connected to the PCB instead of including in the waveguide board. The chip-to-chip interconnections system is pin-free and compatible with the PCB.

Abstract: A method of making an LED light emitting device is disclosed. The method includes forming a multilayer encapsulant in contact with an LED by contacting the LED with a first encapsulant that is a silicone gel, silicone gum, silicone fluid, organosiloxane, polysiloxane, polyimide, polyphosphazene, sol-gel composition, or a first photopolymerizable composition, and then contacting the first encapsulant with a second photopolymerizable composition. Each photopolymerizable composition includes a silicon-containing resin and a metal-containing catalyst, the silicon-containing resin comprising silicon-bonded hydrogen and aliphatic unsaturation. Actinic radiation having a wavelength of 700 nm or less is applied to initiate hydrosilylation within the silicon-containing resins.

Abstract: A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or higher than a reflective index of the semiconductor layer.

Abstract: A light emitting diode and the method of the same are provided. A light emitting diode epitaxy structure is formed on a substrate, and then the light emitting diode epitaxy structure is etched to form a recess. The recess is then filled with a transparent dielectric material. An ohmic contact layer and a reflective layer are formed sequentially, and then are etched to expose the transparent dielectric material. Finally, forming an adhesive conductive complex layer to fix the ohmic contact layer and the reflective layer on the light emitting diode epitaxy structure.

Abstract: A hermetically sealed package includes: a first plate including inside and outside surfaces; a second plate including inside and outside surfaces; frit material disposed on the inside surface of the second plate; and at least one dielectric layer disposed directly or indirectly on at least one of: (i) the inside surface of the first plate at least opposite to the frit material, and (ii) the inside surface of the second plate at least directly or indirectly on the frit material, wherein the frit material forms a hermetic seal against the dielectric layer in response to heating.

Abstract: A light emitting device is disclosed herein. An embodiment of the light emitting device comprises a substrate and a reflector extending from the substrate. The reflector forms a cavity in conjunction with the substrate. A light emitter is located in the cavity. At least one first recessed portion is located in the reflector, the at least one first recessed portion extends substantially axially around the reflector.

Abstract: A nitride semiconductor free-standing substrate formed of a free-standing nitride-based compound semiconductor crystal that has a variation in lattice constant of ±12 ppm or less.

Abstract: A CMOS image sensor includes a photo-transistor capable of performing photo-sensing and active amplification. The photo-transistor is installed to improve low illustration characteristics while maintaining an existing pixel operation. The CMOS image sensor also includes a reset transistor connected to the photo-transistor and adapted to perform a reset function, a drive transistor for acting as a source follower buffer amplifier in response to an output signal from the photo-transistor, and a switching transistor connected to the drive transistor and adapted to perform an addressing function.

Abstract: Methods and systems are provided for LED modules that include an LED die integrated in an LED package with a submount that includes an electronic component for controlling the light emitted by the LED die. The electronic component integrated in the submount may include drive hardware, a network interface, memory, a processor, a switch-mode power supply, a power facility, or another type of electronic component.

Abstract: An optical light engine is fabricated by providing a thermally conductive base having one or more mounting pedestals for elevating one or more LED die above the base's surface. The LED die are mounted on the pedestals, electrically connected, and a mold having a molding surface for molding a dome centered around the LED die is disposed on the base over the pedestal-mounted LED die. The encapsulating material is then injected through an input port disposed in the base to mold the dome around the LED die. The encapsulant material is cured and the mold is removed. In an advantageous embodiment, the light engine comprises a ceramic-coated metal base made by the low temperature co-fired ceramic-on-metal process (LTCC-M).

Abstract: A semiconductor device and an electro-optical device that ensures a stable output are provided even when there is a change in a source-drain current in a saturated operation region of a thin film transistor due to kink effects. The thin film transistor has a multi-gate structure with a polycrystalline silicon film as an active layer, and a source-side first thin film transistor portion and a drain-side second thin film transistor portion connected in series. The first thin film transistor portion has a drain-side back gate electrode that is connected with a first front gate electrode. The second thin film transistor portion has a source-side back gate electrode that is connected with a second front gate electrode.

Abstract: A method for manufacturing an image sensor includes forming first to third photodiodes and first to third color filters corresponding thereto; forming a photoresist film including photosensitive materials on the upper surfaces of the first to third color filters; forming a first exposed part by exposing the photoresist film with a first exposure energy using a first pattern mask with a first light transmitting part having a first width at boundaries between the individual color filters; forming a second exposed part overlapping a portion of the first exposed part by exposing the photoresist film with a second exposure energy smaller than the first exposure energy using a second pattern mask with a second light transmitting part having a second width wider than the first width; and forming microlenses by developing the photoresist film.

Abstract: The present invention relates to a submount on which at least one optical component is mounted. The submount has a mounted portion that is mounted onto a substrate or base, and a protruding portion that protrudes out from the substrate or the base when the mounted portion is mounted to the substrate or base. The gripped portion is formed to enable gripping thereof. Wiring, to enable active alignment, is provided to the gripped portion, and active alignment can be carried out by powering up the optical component mounted on the submount.