Comprising Optoelectronic Devices, E.g., Led, Photodiodes (epo) Patents (Class 257/E25.032)
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Patent number: 8012776Abstract: Methods of manufacturing an imaging device package are provided. In accordance with an embodiment a sensor die may be coupled to bond pads on a transparent substrate. Electrically conductive paths comprising bond wires are formed through the bond pads from the sensor die to an outer surface of the imaging device package.Type: GrantFiled: January 21, 2010Date of Patent: September 6, 2011Assignee: Micron Technology, Inc.Inventor: James Derderian
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Patent number: 8008759Abstract: A method for making a premolded clip structure is disclosed. The method includes obtaining a first clip and a second clip, and forming a molding material around the first clip comprising a first surface and the second clip comprising a second surface. The first surface of the first clip structure and the second surface of the second clip structure are exposed through the molding material, and a premolded clip structure is then formed.Type: GrantFiled: June 24, 2010Date of Patent: August 30, 2011Assignee: Fairchild Semiconductor CorporationInventors: Erwin Victor Cruz, Maria Cristina B. Estacio
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Patent number: 8003419Abstract: Provided is a method of manufacturing a light emitting device from a large-area bonding wafer by using a wafer bonding method using. The method may include forming a plurality of semiconductor layers, each having an active region for emitting light, on a plurality of growth substrates. The method may also include arranging the plurality of growth substrates on which the semiconductor layers are formed on one bonding substrate and simultaneously processing each of the semiconductor layers formed on each of the growth substrates through subsequent processes. The bonding wafer may be formed of a material that reduces or prevents bending or warping due to a difference of thermal expansion coefficients between a wafer material, such as sapphire, and a bonding wafer. According to the above method, because a plurality of wafers may be processed by one process, mass production of LEDs may be possible which may reduce manufacturing costs.Type: GrantFiled: July 27, 2009Date of Patent: August 23, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: Kyoung-kook Kim, Su-hee Chae, Young-soo Park, Taek Kim, Moon-seung Yang, Hyung-su Jeong, Jae-chul Park, Jun-youn Kim
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Patent number: 7999283Abstract: A light emitting device having an encapsulant with scattering features to tailor the spatial emission pattern and color temperature uniformity of the output profile. The encapsulant is formed with materials having light scattering properties. The concentration of these light scatterers is varied spatially within the encapsulant and/or on the surface of the encapsulant. The regions having a high density of scatterers are arranged in the encapsulant to interact with light entering the encapsulant over a desired range of source emission angles. By increasing the probability that light from a particular range of emission angles will experience at least one scattering event, both the intensity and color temperature profiles of the output light beam can be tuned.Type: GrantFiled: June 14, 2007Date of Patent: August 16, 2011Assignee: Cree, Inc.Inventors: Arpan Chakraborty, Bernd Keller
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Patent number: 7999270Abstract: The present invention discloses a III-nitride compound semiconductor light emitting device having an n-type nitride compound semiconductor layer, an active layer grown on the n-type nitride compound semiconductor layer, for generating light by recombination of electron and hole, and a p-type nitride compound semiconductor layer grown on the active layer. The III-nitride compound semiconductor light emitting device includes a plurality of semiconductor layers including a nitride compound semiconductor layer with a pinhole structure grown on the p-type nitride compound semiconductor layer.Type: GrantFiled: November 15, 2006Date of Patent: August 16, 2011Assignee: Epivalley Co., Ltd.Inventors: Eun Hyun Park, Tae-Kyung Yoo
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Patent number: 7999259Abstract: A display includes: a substrate having a pixel region and a sensor region in which photo-sensor parts are formed; an illuminating section operative to illuminate the substrate from one surface side of the substrate; a thin film photodiode disposed in the sensor region, having at least a P-type semiconductor region and an N-type semiconductor region, and operative to receive light incident from the other surface side of the substrate; and a metallic film formed on the one surface side of the substrate so as to face the thin film photodiode through an insulator film, operative to restrain light generated from the illuminating section from being directly incident on the thin film photodiode from the one surface side, and fixed to a predetermined potential, wherein in the thin film photodiode, the width of the P-type semiconductor region and the width of the N-type semiconductor region are different from each other.Type: GrantFiled: December 9, 2008Date of Patent: August 16, 2011Assignee: Sony CorporationInventors: Masanobu Ikeda, Ryoichi Ito, Daisuke Takama, Kenta Seki, Natsuki Otani
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Patent number: 7994521Abstract: Light-emitting devices, and related components, systems and methods are disclosed.Type: GrantFiled: October 9, 2008Date of Patent: August 9, 2011Assignee: Luminus Devices, Inc.Inventors: Alexei A. Erchak, Elefterios Lidorikis, Chiyan Luo
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Patent number: 7994519Abstract: A semiconductor chip (1) comprises a semiconductor body (2) having a semiconductor layer sequence having an active region (23) provided for generating radiation. A contact (4) is arranged on the semiconductor body (2). An injection barrier (5) is formed between the contact (4) and the active region (23). A method for producing a semiconductor chip is also disclosed.Type: GrantFiled: July 14, 2008Date of Patent: August 9, 2011Assignee: OSRAM Opto Semiconductors GmbHInventors: Michael Fehrer, Uwe Strauss
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Patent number: 7994547Abstract: Low temperature processed back side redistribution lines (RDLs) are disclosed. Low temperature processed back side RDLs may be electrically connected to the active surface devices of a semiconductor substrate using through wafer interconnects (TWIs). The TWIs may be formed prior to forming the RDLs, after forming the RDLs, or substantially simultaneously to forming the RDLs. The material for the back side RDLs and various other associated materials, such as dielectrics and conductive via filler materials, are processed at temperatures sufficiently low so as to not damage the semiconductor devices or associated components contained on the active surface of the semiconductor substrate. The low temperature processed back side RDLs of the present invention may be employed with optically interactive semiconductor devices and semiconductor memory devices, among many others. Semiconductor devices employing the RDLs of the present invention may be stacked and electrically connected theretogether.Type: GrantFiled: July 23, 2008Date of Patent: August 9, 2011Assignee: Micron Technology, Inc.Inventors: Peter A Benson, Salman Akram
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Patent number: 7989859Abstract: A backside illuminated imaging sensor includes a semiconductor layer, a metal interconnect layer and a silicide light reflecting layer. The semiconductor layer has a front surface and a back surface. An imaging pixel that includes a photodiode region is formed within the semiconductor layer. The metal interconnect layer is electrically coupled to the photodiode region and the silicide light reflecting layer is coupled between the metal interconnect layer and the front surface of the semiconductor layer. In operation, the photodiode region receives light from the back surface of the semiconductor layer, where a portion of the received light propagates through the photodiode region to the silicide light reflecting layer. The silicide light reflecting layer is configured to reflect the portion of light received from the photodiode region.Type: GrantFiled: June 19, 2008Date of Patent: August 2, 2011Assignee: OmniVision Technologies, Inc.Inventors: Duli Mao, Hsin-Chih Tai, Vincent Venezia, Howard E. Rhodes
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Patent number: 7982230Abstract: A substrate for mounting light emitting elements having two or more conductive layers and an insulating layer provided between each conductive layer, which are formed on the outside of an enameled substrate, the enameled substrate being an enamel layer covering the surface of a core metal. The conductive layer provided on the enamel layer side links one end of enameled substrate to the other end, and feeds power to a plurality of light emitting elements mounted in the longitudinal direction of the conductive layer. Furthermore, the conductive layer on the surface of a protruding section provided at both ends of the enameled substrate extends and forms a connection with another substrate. A light emitting module is formed by mounting light emitting elements on the substrate.Type: GrantFiled: December 10, 2007Date of Patent: July 19, 2011Assignee: Fujikura Ltd.Inventor: Koichiro Masuko
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Patent number: 7973332Abstract: An LED lamp includes a board, a metal wiring provided on the board, an LED mounted on the metal wiring, and a metal heat dissipation film mainly made of a metal different from a metal for forming the metal wiring. The metal heat dissipation film partially overlaps the metal wiring. The metal heat dissipation film has an irregular surface. The metal heat dissipation film is mainly made of a metal that is softer than the metal wiring. The metal heat dissipation film intervenes between the board and the metal wiring, and part of the metal heat dissipation film that is in contact with the metal wiring has an irregular surface.Type: GrantFiled: May 26, 2009Date of Patent: July 5, 2011Assignee: Rohm Co., Ltd.Inventor: Hiroyuki Fukui
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Patent number: 7960806Abstract: A sub-mount, a light emitting diode package, and a method of manufacturing thereof are disclosed. A sub-mount, on which multiple light emitting diodes are mounted, can include a multiple number of metal bodies on which the light emitting diodes are respectively mounted, and an oxide wall interposed between the metal bodies such that the adjacent metal bodies are supported by each other but electrically disconnected from each other. By utilizing certain embodiments of the invention, a high heat releasing effect may be obtained, and manufacturing costs may be reduced.Type: GrantFiled: October 1, 2008Date of Patent: June 14, 2011Assignee: Samsung LED Co., Ltd.Inventors: Young-Ki Lee, Seog-Moon Choi, Hyung-Jin Jeon, Sang-Hyun Shin
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Patent number: 7956355Abstract: An organic electroluminescent device, which, on a substrate, has a plurality of first electrodes, and a second electrode opposing the plurality of first electrodes. The organic electroluminescent device also including a light-emitting functional layer between the second electrode and one of the first electrodes and a buffering layer that covers the second electrode. The buffering layer having a side end portion with an angle equal to or less than 30°. The organic electroluminescent device further including a gas barrier layer that covers the buffering layer.Type: GrantFiled: January 5, 2010Date of Patent: June 7, 2011Assignee: Seiko Epson CorporationInventors: Kenji Hayashi, Ryoichi Nozawa, Yukio Yamauchi
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Patent number: 7951621Abstract: An LED chip package structure with high-efficiency light-emitting effect includes a substrate unit, a light-emitting unit, and a package colloid unit. The substrate unit has a substrate body, and a positive electrode trace and a negative electrode trace respectively formed on the substrate body. The light-emitting unit has a plurality of LED chips arranged on the substrate body. Each LED chip has a positive electrode side and a negative electrode side respectively and electrically connected with the positive electrode trace and the negative electrode trace of the substrate unit. The package colloid unit has a plurality of package colloids respectively covered on the LED chips. Each package colloid has a colloid cambered surface and a colloid light-emitting surface respectively formed on a top surface and a front surface thereof.Type: GrantFiled: November 17, 2009Date of Patent: May 31, 2011Assignee: Harvatek CorporationInventors: Bily Wang, Jonnie Chuang, Wen-Kuei Wu
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Patent number: 7939357Abstract: An active pixel using a photodiode with multiple species of P type dopants is disclosed. The pixel comprises a photodiode formed in a semiconductor substrate. The photodiode is a P? region formed within an N-type region. The P? region is formed from an implant of boron and an implant of indium. Further, the pixel includes a transfer transistor formed between the photodiode and a floating node and selectively operative to transfer a signal from the photodiode to the floating node. Finally, the pixel includes an amplification transistor controlled by the floating node.Type: GrantFiled: January 21, 2010Date of Patent: May 10, 2011Assignee: OmniVision Technologies, Inc.Inventor: Howard E. Rhodes
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Patent number: 7928462Abstract: A light emitting device having a vertical structure, a package thereof and a method for manufacturing the same, which are capable of damping impact generated in a substrate separation process, and achieving an improvement in mass productivity, are disclosed. The method includes growing a semiconductor layer having a multilayer structure over a substrate, forming a first electrode on the semiconductor layer, separating the substrate including the grown semiconductor layer into unit devices, bonding each of the separated unit devices on a sub-mount, separating the substrate from the semiconductor layer, and forming a second electrode on a surface of the semiconductor layer exposed in accordance with the separation of the substrate.Type: GrantFiled: February 2, 2007Date of Patent: April 19, 2011Assignee: LG Electronics Inc.Inventors: Jun-Ho Jang, Geun ho Kim
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Patent number: 7928463Abstract: A light emitting device is provided, which includes a light-emitting structure and a magnetic material. The light-emitting structure has an exciting binding energy of a bandgap. The magnetic material is coupled with the light-emitting structure to produce a magnetic field in the light-emitting structure. The exciting binding energy may be higher than about 25.8 meV at room temperature.Type: GrantFiled: May 7, 2009Date of Patent: April 19, 2011Assignee: Industrial Technology Research InstituteInventor: Rong Xuan
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Patent number: 7919769Abstract: An exemplary illuminator includes a first electrode, a second electrode, and a light-emitting chip. The light-emitting chip includes light-emitting layers arranged three-dimensionally. The first and second electrodes are configured for providing different voltages to the light-emitting chip, and the light-emitting chip is capable of emitting light simultaneously along all dimensional axes.Type: GrantFiled: July 21, 2008Date of Patent: April 5, 2011Assignees: Innocom Technology (Shenzhen) Co., Ltd., Chimei Innolux CorporationInventors: Yong-Shan Liu, Xiao-Hai Zheng
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Patent number: 7919779Abstract: The manufacturing method of a semiconductor device according to the present invention comprises steps of forming a metal film, an insulating film, and an amorphous semiconductor film in sequence over a first substrate; crystallizing the metal film and the amorphous semiconductor film; forming a first semiconductor element by using the crystallized semiconductor film as an active region; attaching a support to the first semiconductor element by using an adhesive; causing separation between the metal film and the insulating film; attaching a second substrate to the separated insulating film; separating the support by removing the adhesive; forming an amorphous semiconductor film over the first semiconductor element; and forming a second semiconductor element using the amorphous semiconductor film as an active region.Type: GrantFiled: February 12, 2009Date of Patent: April 5, 2011Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Kazuo Nishi, Toru Takayama, Yuugo Goto
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Patent number: 7915679Abstract: Light-emitting devices, and related components, systems and methods are disclosed. In some embodiments, the light-emitting devices include a multi-layer stack of materials. The stack of materials includes a light-generating region and a first layer supported by the light-generating region. The surface of the first layer is configured so that light generated by the light-generating region can emerge from the light-emitting device via the surface of the first layer. The surface has a dielectric function that varies spatially according to a nonperiodic pattern.Type: GrantFiled: September 27, 2004Date of Patent: March 29, 2011Assignee: Luminus Devices, Inc.Inventors: Alexei A. Erchak, Elefterios Lidorikis, Chiyan Luo
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Patent number: 7915649Abstract: A light emitting display device includes a light emitting diode and a thin film transistor on a substrate, the light emitting diode and thin film transistor being electrically coupled to each other, and a photo diode on the substrate, the photo diode including an N-type doping region, a P-type doping region, and an intrinsic region between the N-type doping region and the P-type doping region, the intrinsic region including amorphous silicon.Type: GrantFiled: July 18, 2008Date of Patent: March 29, 2011Assignee: Samsung Mobile Display Co., Ltd.Inventors: Ki-Ju Im, Byoung-Deog Choi
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Patent number: 7902559Abstract: A light emitting device includes a substrate having transparency, a light emitting element that emits light at least to the substrate side, and a light detecting element that is formed between the light emitting element and the substrate. The light detecting element is formed along an outer frame of the light emitting element in a plan view.Type: GrantFiled: November 12, 2008Date of Patent: March 8, 2011Assignee: Seiko Epson CorporationInventors: Tsukasa Eguchi, Hiroaki Jo, Eiji Kanda, Toshiyuki Kasai, Atsushi Ito
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Patent number: 7898067Abstract: Semiconductor packages that contain multiple dies and methods for making such packages are described. The semiconductor packages contain a leadframe with multiple dies and also contain a single premolded clip that connects the dies. The premolded clip connects the solderable pads of the source die and gate die to the source and gate of the leadframe via standoffs. The solderable pads on the dies and on the standoffs provide a substantially planar surface to which the premolded clip is attached. Such a configuration increases the cross-sectional area of the interconnection when compared to wirebonded connections, thereby improving the electrical (RDSon) and the thermal performance of the semiconductor package. Such a configuration also lowers costs relative to similar semiconductor packages that use wirebonded connections. Other embodiments are described.Type: GrantFiled: October 31, 2008Date of Patent: March 1, 2011Inventor: Armand Vincent C. Jereza
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Patent number: 7892868Abstract: A LED packaging method includes a procedure of placing a screen plate having stepped holes on a substrate carrying LED chips, a procedure of reversing the screen plate with respect to the substrate, and a procedure of packaging the LED chips with a first packaging adhesive and a second packaging adhesive by means of applying the first packaging adhesive to the small diameter portion of each stepped hole when the first side of the screen plate is attached to the substrate and then applying the second packaging adhesive to the big diameter portion of each stepped hole after the screen plate is reversed.Type: GrantFiled: August 20, 2008Date of Patent: February 22, 2011Assignee: Genius Electronic Optical Co., Ltd.Inventors: Ming-Yen Chen, Fan-Hsiu Wei, Feng-Kuan Chen, Sheau-Wen Wu, Yueh-Hsia Chiu
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Patent number: 7892870Abstract: A method and system for removing heat from an LED facilitates the fabrication of LEDs having enhanced brightness. A thermally conductive interposer can be attached to the top of the LED. Heat can flow through the top of the LED and into the interposer. The interposer can carry the heat away from the LED. Light can exit the LED though an at least partially transparent substrate of the LED. By removing heat from an LED, the use of more current through the LED is facilitated, thus resulting in a brighter LED.Type: GrantFiled: February 5, 2010Date of Patent: February 22, 2011Assignee: Bridgelux, Inc.Inventor: Wei Shi
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Patent number: 7893452Abstract: Optoelectronic components with a semiconductor chip, which is suitable for emitting primary electromagnetic radiation, a basic package body, which has a recess for receiving the semiconductor chip and electrical leads for the external electrical connection of the semiconductor chip and a chip encapsulating eclement, which encloses the semiconductor chip in the recess. The basic package body is at least partly optically transmissive at least for part of the primary radiation and an optical axis of the semiconductor chip runs through the basic package body The basic package body comprises a luminescence conversion material, which is suitable for converting at least part of the primary radiation into secondary radiation with wavelengths that are at least partly changed in comparison with the primary radiation.Type: GrantFiled: September 28, 2005Date of Patent: February 22, 2011Assignee: Osram Opto Semiconductors GmbHInventor: Volker Härle
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Patent number: 7888688Abstract: A method and system for removing heat from an LED facilitates the fabrication of LEDs having enhanced brightness. A thermally conductive interposer can be attached to the top of the LED. Heat can flow through the top of the LED and into the interposer. The interposer can carry the heat away from the LED. Light can exit the LED though an at least partially transparent substrate of the LED. By removing heat from an LED, the use of more current through the LED is facilitated, thus resulting in a brighter LED.Type: GrantFiled: April 29, 2008Date of Patent: February 15, 2011Assignee: Bridgelux, Inc.Inventor: Wei Shi
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Patent number: 7883916Abstract: A complementary metal-oxide-semiconductor (CMOS) image sensor comprises a first photosensitive diode comprising a first semiconductor material is formed in a first semiconductor substrate. A second photosensitive diode comprising a second semiconductor material, which has a different light detection wavelength range than the first semiconductor material, is formed in a second semiconductor substrate. Semiconductor devices for holding and detecting charges comprising a sensing circuit of the CMOS image sensor may also be formed in the second semiconductor substrate. The first semiconductor substrate and the second semiconductor substrate are bonded so that the first photosensitive diode is located underneath the second photosensitive diode. The vertical stack of the first and second photosensitive diodes detects light in the combined detection wavelength range of the first and second semiconductor materials. Sensing devices may be shared between the first and second photosensitive diodes.Type: GrantFiled: May 30, 2008Date of Patent: February 8, 2011Assignee: International Business Machines CorporationInventors: Jeffrey P. Gambino, Daniel N. Maynard, Kevin N. Ogg, Richard J. Rassel, Raymond J. Rosner
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Patent number: 7875917Abstract: An image sensor and a method for manufacturing the same are provided. In the image sensor, a semiconductor substrate has a pixel region and a peripheral region defined by a first device isolation layer. First and second photodiode patterns are formed on the pixel region and are connected to lower metal lines to first and second readout circuitries. The first photodiode pattern performs as an active photodiode and the second photodiode pattern functions as a dummy pixel. The dummy pixel can measure leakage current.Type: GrantFiled: December 2, 2008Date of Patent: January 25, 2011Assignee: Dongbu HiTek Co., Ltd.Inventor: Jong Man Kim
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Patent number: 7871839Abstract: The present invention relates to a light emitting element with arrayed cells, a method of manufacturing the same, and a light emitting device using the same. The present invention provides a light emitting element including a light emitting cell block with a plurality of light emitting cells connected in series or parallel on a single substrate, and a method of manufacturing the same, wherein each of the plurality of light emitting cells includes an N-type semiconductor layer and a P-type semiconductor layer, and the N-type semiconductor layer of one light emitting cell is electrically connected to the P-type semiconductor layer of another adjacent light emitting cell. Further, the present invention provides a light emitting device including a light emitting element with a plurality of light emitting cells connected in series.Type: GrantFiled: January 11, 2010Date of Patent: January 18, 2011Assignee: Seoul Opto Device Co., Ltd.Inventors: Chung-Hoon Lee, Keon-Young Lee, Lacroix Yves
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Patent number: 7873092Abstract: The present invention provides a laser diode realizing improved light detection precision. The laser diode includes a stack structure in which a first semiconductor layer of a first conduction type, an active layer, and a second semiconductor layer of a second conduction type are included in this order; a photodetection layer; and a plurality of light absorption layers provided on the corresponding position of antinodes or nodes of standing waves of light output from the active layer.Type: GrantFiled: October 31, 2007Date of Patent: January 18, 2011Assignee: Sony CorporationInventors: Yuji Masui, Takahiro Arakida, Yoshinori Yamauchi, Norihiko Yamaguchi, Rintaro Koda, Tomoyuki Oki
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Patent number: 7872287Abstract: It is an object of the present invention to provide an image sensor having a high ratio of a surface area of a light receiving element to a surface area of one pixel. The above-described object is achieved by an inventive solid-state imaging device unit comprising solid-state imaging devices arranged on a substrate according to the present invention. The solid-state imaging device comprises a signal line formed on the substrate, an island shaped semiconductor placed over the signal line, and a pixel selection line connected to an upper portion of the island shaped semiconductor.Type: GrantFiled: November 10, 2008Date of Patent: January 18, 2011Assignee: Unisantis Electronics (Japan) Ltd.Inventors: Fujio Masuoka, Hiroki Nakamura
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Patent number: 7859001Abstract: A semiconductor light emitting apparatus can include a housing filled with a wavelength conversion material-containing resin material which seals a semiconductor light emitting device inside the recess of the housing. A transparent resin material can be charged on the wavelength conversion material-containing resin material, and can be configured to prevent the resin materials from being detached from each other or from other portions, such as a housing. Furthermore, such a semiconductor light emitting apparatus can emit light with less color unevenness. The housing can include a first recessed portion and a second recessed portion. The second recessed portion can have a larger diameter than the first recessed portion so as to form a stepped area at the boundary therebetween. The first recessed portion is filled with the wavelength conversion material-containing resin material as a first resin.Type: GrantFiled: August 7, 2008Date of Patent: December 28, 2010Assignee: Stanley Electric Co., Ltd.Inventors: Wakako Niino, Masami Kumei, Toshimi Kamikawa, Takashi Ebisutani
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Patent number: 7851811Abstract: An optoelectronics chip-to-chip interconnects system is provided, including at least one packaged chip to be connected on the printed-circuit-board with at least one other packaged chip, optical-electrical (O-E) conversion mean, waveguide-board, and (PCB). Single to multiple chips interconnects can be interconnected provided using the technique disclosed in this invention. The packaged chip includes semiconductor die and its package based on the ball-grid array or chip-scale-package. The O-E board includes the optoelectronics components and multiple electrical contacts on both sides of the O-E substrate. The waveguide board includes the electrical conductor transferring the signal from O-E board to PCB and the flex optical waveguide easily stackable onto the PCB to guide optical signal from one chip-to-other chip. Alternatively, the electrode can be directly connected to the PCB instead of including in the waveguide board. The chip-to-chip interconnections system is pin-free and compatible with the PCB.Type: GrantFiled: July 31, 2007Date of Patent: December 14, 2010Assignee: Banpil Photonics, Inc.Inventor: Achyut Kumar Dutta
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Patent number: 7851816Abstract: An optoelectronics chip-to-chip interconnects system is provided, including at least one packaged chip to be connected on the printed-circuit-board with at least one other packaged chip, optical-electrical (O-E) conversion mean, waveguide-board, and (PCB). Single to multiple chips interconnects can be interconnected provided using the technique disclosed in this invention. The packaged chip includes semiconductor die and its package based on the ball-grid array or chip-scale-package. The O-E board includes the optoelectronics components and multiple electrical contacts on both sides of the O-E substrate. The waveguide board includes the electrical conductor transferring the signal from O-E board to PCB and the flex optical waveguide easily stackable onto the PCB to guide optical signal from one chip-to-other chip. Alternatively, the electrode can be directly connected to the PCB instead of including in the waveguide board. The chip-to-chip interconnections system is pin-free and compatible with the PCB.Type: GrantFiled: July 31, 2007Date of Patent: December 14, 2010Assignee: Banpil Photonics, Inc.Inventor: Achyut Kumar Dutta
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Patent number: 7847301Abstract: By adding light reflective and/or transparent and/or translucent material within a micro-electronic circuit housing, improved light transfer is achieved between a light generation source and a light utilization device. In one embodiment, the reflective material is placed on the inside surface of a non-metallic housing lid and the light from the light source (typically an LED) reflects from the reflective material and impacts the device (typically an FET). In another embodiment, the LED and FET are encased in a clear (low light-loss) material (typically silicone overcoat) so as to allow the light from the LED to reflect from the top of the clear material onto the FET. If desired, an opaque encapsulant surrounds the clear material and fills out the volume within the housing.Type: GrantFiled: December 1, 2005Date of Patent: December 7, 2010Assignee: Agilent Technologies, Inc.Inventors: Fred H. Ives, Dean Nicholson, Jonathan Storie, Brian Carlson
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Patent number: 7842966Abstract: A compound semiconductor light-emitting diode includes a light-emitting layer (133) formed of aluminum-gallium-indium phosphide, a light-emitting part (13) having component layers individually formed of a Group III-V compound semiconductor, a transparent supporting layer (14) bonded to one of the outermost surface layers (135) of the light-emitting part (13) and transparent to the light emitted from the light-emitting layer (133), and a bonding layer (141) formed between the supporting layer (14) and the one of the outermost surface layers (135)of the light-emitting part (13) containing oxygen atoms at a concentration of 1×1020 cm?3 or less.Type: GrantFiled: July 5, 2006Date of Patent: November 30, 2010Assignee: Showa Denko K.K.Inventors: Takashi Watanabe, Ryouichi Takeuchi
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Patent number: 7829902Abstract: Emissive quantum photonic imagers comprised of a spatial array of digitally addressable multicolor pixels. Each pixel is a vertical stack of multiple semiconductor laser diodes, each of which can generate laser light of a different color. Within each multicolor pixel, the light generated from the stack of diodes is emitted perpendicular to the plane of the imager device via a plurality of vertical waveguides that are coupled to the optical confinement regions of each of the multiple laser diodes comprising the imager device. Each of the laser diodes comprising a single pixel is individually addressable, enabling each pixel to simultaneously emit any combination of the colors associated with the laser diodes at any required on/off duty cycle for each color. Each individual multicolor pixel can simultaneously emit the required colors and brightness values by controlling the on/off duty cycles of their respective laser diodes.Type: GrantFiled: June 17, 2009Date of Patent: November 9, 2010Assignee: Ostendo Technologies, Inc.Inventors: Hussein S. El-Ghoroury, Robert G. W. Brown, Dale A. McNeill, Huibert DenBoer, Andrew J. Lanzone
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Patent number: 7821094Abstract: A light emitting diode structure has a silicon substrate, a conductive layer, and a light emitting diode. The top surface of the silicon substrate has a cup-structure like paraboloid, and the bottom of the cup-structure has a plurality of through-holes penetrating the silicon substrate. The conductive layer fills up the through-holes and protrudes out from the through-holes. The light emitting diode is disposed on the top of the conductive layer protruding out from the through-holes and is located at the focus of the cup-structure.Type: GrantFiled: October 8, 2008Date of Patent: October 26, 2010Assignee: Touch Micro-System Technology Inc.Inventors: Hung-Yi Lin, Hong-Da Chang
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Patent number: 7816703Abstract: A light-emitting diode device includes an epitaxial layer, a current blocking layer and a current spreading layer. The current blocking layer is disposed on one side of the epitaxial layer and contacts with a portion of the epitaxial layer. The current spreading layer is disposed on one side of the epitaxial layer and contacts with at least a portion of the current blocking layer.Type: GrantFiled: November 12, 2008Date of Patent: October 19, 2010Assignee: Delta Electronics, Inc.Inventors: Chao-Min Chen, Shih-Peng Chen, Ching-Chuan Shiue, Huang-Kun Chen
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Patent number: 7816690Abstract: A light-emitting device includes a light-emitting element 12 and a wiring substrate 11 having a substrate body 17 having a protruding portion 25 at a position where the light-emitting device 12 is disposed and wiring patterns 21 and 22 disposed on the substrate body 17 and electrically connected to the light-emitting element 12.Type: GrantFiled: August 6, 2007Date of Patent: October 19, 2010Assignee: Shinko Electric Industries Co., Ltd.Inventors: Akinori Shiraishi, Yuichi Taguchi, Kei Murayama, Masahiro Sunohara, Mitsutoshi Higashi
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Publication number: 20100260221Abstract: Proposed is a light emitting module (1), comprising a semiconductor light emitting device (10) and a thermal switch (20). The thermal switch (20) is arranged to protect the device (10) from over heating. At elevated temperatures the junction of the device (10) may reach a critical level causing catastrophic breakdown of the device. According to the invention, the thermal switch is arranged to shunt the semiconductor light emitting device. This is especially advantageous as the thermal protection offered by the switch (20) correlates directly to the (junction) temperature of the device (10).Type: ApplicationFiled: December 10, 2008Publication date: October 14, 2010Applicant: KONINKLIJKE PHILIPS ELECTRONICS N.V.Inventor: Jiang Hong Yu
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Patent number: 7812361Abstract: A light emitting diode includes a substrate, a reflecting layer, an active layer, a transparent electrode, a first photonic crystal structure, and a second photonic crystal structure. The reflecting layer is disposed on the substrate. The active layer is disposed on the reflecting layer. The transparent electrode is disposed on the active layer and includes an upper surface and a lower surface. The lower surface of the transparent electrode combines with the active layer. The first photonic crystal structure is formed on the upper surface of the transparent electrode. The second photonic crystal structure formed in the active layer.Type: GrantFiled: December 26, 2007Date of Patent: October 12, 2010Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.Inventors: Zhen-Feng Xu, Guo-Fan Jin
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Patent number: 7812417Abstract: To provide a small, thin and light-weighted composite sensor which can also detect light together with sound, vibration, pressure or acceleration by a single sensor. An electret capacitor type composite sensor is constituted by a casing 11, an electrode 12, a hole portion (which is a sound hole and also a light introduction hole) 22, a spacer 31, a vibration plate 41 having light transmissibility, a vibration plate ring 42, a printed board 6 and a semiconductor element 61. Further, a photoelectric conversion portion having a function of photoelectric effect is provided at a portion of the surface of the semiconductor element 61, light is conducted to the photoelectric conversion portion via the hole portion 22 and the vibration plate 41 having light transmissibility, and an electric signal generated by the photoelectromotive force is taken out independently from an electric signal generated by the change of the electrostatic capacitance of the electret capacitor.Type: GrantFiled: February 28, 2007Date of Patent: October 12, 2010Assignee: Panasonic CorporationInventor: Tatsuhiro Sawada
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Patent number: 7808005Abstract: Various aspects of the present invention are directed to light-emitting devices including a photonic grating configured to extract spontaneous emission of electromagnetic radiation from a light-emitting structure. In one aspect of the present invention, a light-emitting device includes a light-emitting structure having an active region designed to emit electromagnetic radiation with a selected frequency. The light-emitting device further includes a photonic grating spaced from the active region of the light-emitting structure. The photonic grating is capable of supporting a leaky guided mode that extends within the active region of the light-emitting structure. The leaky guided mode has a mode frequency approximately equal to the selected frequency emitted by the active region and a mode wavevector that is approximately equal to a reciprocal lattice vector of the photonic grating.Type: GrantFiled: April 26, 2007Date of Patent: October 5, 2010Assignee: Hewlett-Packard Development Company, L.P.Inventors: David A. Fattal, Mihail Sigalas, Raymond G. Beausoleil
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Patent number: 7807489Abstract: A light-emitting device with a protection layer for Zn inter-diffusion and a process to form the device are described. The device of the invention provides an active layer containing aluminum (Al) as a group III element, typically AlGaInAs, and protection layers containing silicon (Si) to prevent the inter-diffusion of zing (Zn) atoms contained in p-type layers surrounding the active layer. One of protection layers is put between the active layer and the p-type cladding layer, while, the other of protection layers is disposed between the active layer and the p-type burying layer.Type: GrantFiled: June 18, 2008Date of Patent: October 5, 2010Assignee: Sumitomo Electric Industries, Ltd.Inventors: Mitsuo Takahashi, Kenji Hiratsuka, Akiko Kumagai
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Patent number: 7808006Abstract: A phosphor has a general formula of (M1-m-nCemEun)3Al2O5X2, wherein M is at least one selected from the group consisting of Ca, Sr and Ba; and X is at least one selected from the group consisting of Cl and Br, while 0<m<1 and 0<n<1.Type: GrantFiled: April 24, 2009Date of Patent: October 5, 2010Assignee: National Chiao Tung UniversityInventors: Teng-Ming Chen, Chun-Kuei Chang
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Patent number: 7804097Abstract: A liquid crystal display device comprises at least two insulating layers formed on a first conductive layer, a second conductive layer formed between the at least two insulating layers, a first contact hole penetrating an upper insulating layer of the at least two insulating layers on the second conductive layer, a second contact hole penetrating the at least two insulating layers and exposing a portion of the first conductive layer, and a contact part comprising a bridge electrode formed of a third conductive layer for connecting the first and second conductive layers through the first and second contact holes. The second contact hole comprises an internal hole penetrating the at least two insulating layers and an external hole surrounding the internal hole forming in the upper insulating layers.Type: GrantFiled: November 21, 2006Date of Patent: September 28, 2010Assignee: Samsung Electronics Co., Ltd.Inventors: Shin Tack Kang, Jeong Il Kim, Jong Hyuk Lee, Yu Jin Kim, Hyang Shik Kong, Myung Koo Hur, Sung Man Kim
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Patent number: 7795069Abstract: An image sensor includes a lower metal interconnection, an interlayer dielectric, a first substrate, a photodiode, an upper electrode and an amorphous silicon layer. The lower metal interconnection and the interlayer dielectric are formed over the first substrate including a pixel region and a peripheral region. The photodiode is formed over the pixel region of the first substrate. The upper electrode layer is connected to the photodiode. The amorphous silicon layer is formed between the photodiode and the interlayer dielectric.Type: GrantFiled: December 27, 2008Date of Patent: September 14, 2010Assignee: Dongbu HiTek Co., Ltd.Inventor: Sung-Ho Jun