Including A Plurality Of Individual Components In A Repetitive Configuration (epo) Patents (Class 257/E27.07)
- Including diode only (EPO) (Class 257/E27.073)
- Including bipolar transistor (EPO) (Class 257/E27.074)
- Bipolar dynamic random access memory structure (EPO) (Class 257/E27.075)
- Array of single bipolar transistors only, e.g. read only memory structure (EPO) (Class 257/E27.076)
- Static bipolar memory cell structure (EPO) (Class 257/E27.077)
- Bipolar electrically programmable memory structure (EPO) (Class 257/E27.078)
- Thyristor (EPO) (Class 257/E27.079)
- Unijunction transistor, i.e., three terminal device with only one p-n junction having a negative resistance region in the I-V characteristic (EPO) (Class 257/E27.08)
- Including bucket brigade type charge coupled device (C.C.D) (EPO) (Class 257/E27.082)
- Including charge coupled device (C.C.D) or charge injection device (C.I.D) (EPO) (Class 257/E27.083)
- Dynamic random access memory, DRAM, structure (EPO) (Class 257/E27.084)
- One-transistor memory cell structure, i.e., each memory cell containing only one transistor (EPO) (Class 257/E27.085)
- Peripheral structure (EPO) (Class 257/E27.097)
- Static random access memory, SRAM, structure (EPO) (Class 257/E27.098)
- Read-only memory, ROM, structure (EPO) (Class 257/E27.102)