Abstract: A solar module includes a protective shell with at least two sealed sections formed by moisture barrier sealants. Each sealed section is separated from the adjacent sections and includes at least a portion of a solar cell. In this sectioned configuration, any local defect through the protective shell will only affect the performance of the portions of the solar cells within a particular section that contains this defect and will not affect the portions of the solar cells that are in other sections.

Abstract: The invention relates to an arrangement and circuit, and to a method for interconnecting flat rigid or flexible solar cells, the photoelectrical active layers thereof being applied to an insulating substrate material. The aim of the invention is provide a novel arrangement and circuit and an associated method for interconnecting flat solar cells, reducing the risk of short circuit and the inactive surface area in the matrix composite of the solar module and selectively allowing simple interconnection, both as a parallel circuit and as a series circuit in production. The solar cells (1) in the arrangement and circuit of flat rigid or flexible solar cells are disposed overlapping in the contact area to one or more adjacent solar cells (1). Said solar cells (1) are interconnected to each other directly once or a plurality of times in a novel manner, having a contact material (10) at the overlapping area to each other, used in contact material (10) or switching points (22).

Abstract: Described is a method for forming thin semiconductor layer substrates for manufacturing solar cells, in which method in a provided semiconductor substrate alternately macroporous layers of low macroporosity and etched-away layers can be formed by electrochemical etching. The etched-away layers separate adjacent macroporous layers so that these are preferably self-supporting. In this arrangement an edge region of the semiconductor substrate, which edge region encompasses the macroporous layers at least in part, remains non-etched and is thus used for mechanically stabilizing the encompassed lightly-macroporous layers connected to it. The multilayer stack produced in this manner can subsequently, in a joint fluid process step, as an entity be subjected to further processing steps, for example can be coated with a passivating oxide.

Abstract: An infrared (IR) radiation sensor device (27) includes an integrated circuit radiation sensor chip (1A) including first (7) and second (8) temperature-sensitive elements connected within a dielectric stack (3) of the chip, the first temperature-sensitive element (7) being more thermally insulated from a substrate (2) than the second temperature-sensitive element (8). Bonding pads (28A) on the chip (1) are coupled to the first and second temperature-sensitive elements. Bump conductors (28) are bonded to the bonding pads (28A), respectively, for physically and electrically connecting the radiation sensor chip (1) to corresponding mounting conductors (23A). A diffractive optical element (21,22,23,31,32 or 34) is integrated with a back surface (25) of the radiation sensor chip (1) to direct IR radiation toward the first temperature-sensitive element (7).

Abstract: Certain embodiments provide an infrared imaging device including: an SOI structure that is placed at a distance from a substrate, and includes: heat-sensitive diodes that detect infrared rays and convert the infrared rays into heat; and STI regions that separate the heat-sensitive diodes from one another; an interlayer insulating film that is stacked on the SOI structure; and supporting legs that are connected to the heat-sensitive diodes and vertical signal lines provided in outer peripheral regions of the heat-sensitive diodes. Each of the supporting legs includes: an interconnect unit that transmit signals to the vertical signal lines; and interlayer insulating layers that sandwich the interconnect unit, each bottom side of the interlayer insulating layers being located in a higher position than the SOI structure.

Abstract: A terahertz wave radiating element includes: a first nitride semiconductor layer formed on a substrate; a second nitride semiconductor layer formed over the first nitride semiconductor layer, and having a wider bandgap than the first nitride semiconductor layer; and source, gate, and drain electrodes formed on the second nitride semiconductor layer. The source electrode is formed by a plurality of source electrode fingers that are arranged periodically, and the drain electrode is formed by a plurality of drain electrode fingers that are arranged periodically.

Abstract: A complementary metal oxide semiconductor (CMOS) image sensing device includes a semiconductor substrate; a photodiode defined on the substrate; a gate dielectric layer provided over the photodiode and the substrate; a polysilicon interconnect contacting a given area of the photodiode via an opening in the gate dielectric layer; a reset transistor coupled to the photodiode; a source follower transistor coupled to the photodiode; and a select transistor coupled to the source follower transistor. The given area of the photodiode defines a node that is coupled to the reset transistor and source follower transistor.

Abstract: The present invention provides a method for manufacturing a solar cell. The method for manufacturing a solar cell comprises: forming via holes in a silicon wafer; forming a shallow emitter on the front surface and the rear surface of the wafer, connecting the inner walls of the via holes and the via holes; and selectively forming an emitter through the heavy doping of a dopant to provide a plurality of regions along a direction linking the via holes of the shallow emitter with a certain concentration or higher. Accordingly, the present invention can selectively form an emitter on an MWT solar cell by performing laser doping or etching on a region contacting a front surface electrode having a certain width and height.

Abstract: A method for forming a back-side illuminated image sensor from a semiconductor substrate, including the steps of: a) thinning the substrate from its rear surface; b) depositing, on the rear surface of the thinned substrate, an amorphous silicon layer of same conductivity type as the substrate but of higher doping level; and c) annealing at a temperature enabling to recrystallized the amorphous silicon to stabilize it.

Abstract: A construction element (29) which extends in two dimensions comprises a solar energy converter member (1) which also extends along and defines one surface of the construction element (29). The construction element (29) further comprises a building construction member (30) which extends along the construction element (29) and defines the second surface thereof. At least a part of the solar energy converter member (1) is integral with at least a part of the building construction member (30) whereby this integral part both contributes to the requirements for solar energy conversion as well as to requirements for constructions.

Abstract: A nanowire-based photonic device and an array employ nanowires connecting between coaxially arranged electrodes in a non-uniform manner along a vertical extent of the electrodes. The device includes a pair of the electrodes separated by a circumferential gap. The nanowires chaotically emanate from an inner electrode of the pair and connect across the circumferential gap to an outer electrode of the pair. The array includes an outer electrode having an interconnected pattern of cells and inner electrodes, one per cell, arranged coaxially with and separated from the outer electrode by respective circumferential gaps. The nanowires chaotically emanate from the inner electrodes and connect across the respective circumferential gaps of the cells to the outer electrode. The device and the arrays further include a semiconductor junction between the electrodes.

Abstract: An electron transporting surfactant is added to a raw material solution such that the electron transporting surfactant is coordinated on the surfaces of quantum dots, and after the dispersion solvent is evaporated by vacuum drying, the immersion in a solvent containing a hole transporting surfactant prepares a quantum dot dispersed solution with a portion of the electron transporting surfactant replaced with the hole transporting surfactant. The quantum dot dispersed solution is applied onto a substrate to prepare a hole transport layer and a quantum dot layer at the same time, and thereby to achieve a thin film which has a two-layer structure.

Abstract: Disclosed herein are a method and an apparatus for producing a solar cell. The method includes: (a) preparing a rear contact solar cell substrate having electrode patterns formed on a rear surface thereof; (b) performing scribing on a front surface of the substrate on which the electrode patterns are not formed, by using laser; and (c) cutting the substrate in each cell along the scribing so as to form the solar cell. Further, an apparatus for producing a solar cell is operated by the method for producing a solar cell.

Abstract: A microelectromechanical system (MEMS) resonator or filter including a first conductive layer, one or more electrodes patterned in the first conductive layer which serve the function of signal input, signal output, or DC biasing, or some combination of these functions, an evacuated cavity, a resonating member comprised of a lower conductive layer and an upper structural layer, a first air gap between the resonating member and one or more of the electrodes, an upper membrane covering the cavity, and a second air gap between the resonating member and the upper membrane.

Abstract: This layered element (11) for encapsulating an element (12) that is sensitive to air and/or moisture, especially an element that collects or emits radiation such as a photovoltaic cell or an organic light-emitting diode, comprises a polymer layer (1) and a barrier layer (2) against at least one face (1A) of the polymer layer. The barrier layer (2) has a moisture vapor transfer rate of less than 10?2 g/m2 per day and consists of a multilayer of at least two thin hydrogenated silicon nitride layers (21, 22, 23, 24) having alternately lower and higher densities.

Abstract: An assembly including a pressure sensitive adhesive layer at least 0.25 mm in thickness disposed on a barrier assembly, wherein the barrier assembly comprises a polymeric film substrate and a barrier film. The assembly is flexible and transmissive to visible and infrared light. A pressure sensitive adhesive in the form of a film at least 0.25 mm thick is also provided, the pressure sensitive adhesive including a polyisobutylene having a weight average molecular weight less than 300,000 grams per mole; and a hydrogenated hydrocarbon tackifier. Methods of making and using the assembly and the pressure sensitive adhesive are also included.

Abstract: A radiation imaging device includes: a sensor substrate having a pixel portion including a photoelectric conversion element; a scintillator layer provided on the pixel portion of the sensor substrate; and a sealing layer with which at least a part of the scintillator layer is sealed, in which the sealing layer includes a first wall portion disposed on the sensor substrate away from the scintillator layer, and a moisture-proof layer provided between the scintillator layer and the first wall portion.

Abstract: The present invention relates to a method for the production of solar modules, in which air inclusions are prevented.

Abstract: A photosensitive device and method includes a top cell having an N-type layer, a P-type layer and a top intrinsic layer therebetween. A bottom cell includes an N-type layer, a P-type layer and a bottom intrinsic layer therebetween. The bottom intrinsic layer includes a Cu—Zn—Sn containing chalcogenide.

Abstract: The detection device includes a semiconductor substrate of a first conductivity type. A matrix of photodiodes organized along a first organization axis is formed on the substrate. Each photodiode is at least partially formed in the substrate. A peripheral biasing ring is formed around the photodiode matrix. The biasing ring is connected to a bias voltage generator. An electrically conducting contact is connected to the substrate and arranged between two photodiodes on the first organization axis. The distance separating the contact from each of the two photodiodes is equal to the distance separating two adjacent photodiodes along the first organization axis. The contact is connected to the bias voltage generator.

Abstract: A method of detecting the alignment of a substrate during a sequence of printing steps, comprises detecting in a detection unit a position of at least one printing track that forms a printed pattern onto a surface of the substrate in a first printing station, determining a reference point in at least a portion of the printing track, comparing the actual position of the reference point with an expected or previously detected position of the reference point, determining an offset between the actual position and the expected or previously detected position of the reference point, adjusting the reciprocal position between the printing head of a second printing station and the substrate to account for the determined offset, and then printing a second pattern over the first pattern.

Abstract: A method of assembling elongate solar cells into an assembly may comprise forming a unitary structure comprising a plurality of elongate solar cell precursor structures from a semiconductor wafer and attaching an adhesive surface of a transfer structure to an edge of each of the plurality of elongate solar cell precursor structures. The method may further comprise attaching the plurality of elongate solar cells to an expandable fixture and expanding the expandable fixture to change at least one of an orientation and a position of the plurality of elongate solar cells relative to one another. Additionally, a solar panel assembly may comprise a plurality of elongate solar cells positioned on a substrate, major surfaces of the plurality of elongate solar cells oriented in a non-planar configuration. Furthermore, elongate solar cells may comprise non-linear shapes in an as-formed state. Transfer structures and expandable fixtures useful in performing methods of the disclosure are also described.

Abstract: An organic photovoltaic cell comprising a pair of electrodes and an active layer that is located between the pair of electrodes and containing an organic compound, in which each content of inorganic compounds of a phosphorus compound, a palladium compound, an aluminum compound, an iron compound, a calcium compound, a potassium compound, and a sodium compound are 30 ppm by weight or less in the active layer, and is excellent in photovoltaic efficiency.

Abstract: A micro vacuum gauge includes a substrate, a floating structure that is held above the substrate by a supporting structure extending from the substrate in a state where the floating structure is thermally isolated from the substrate, a heat generator that is arranged in the floating structure to generate heat, and a temperature sensor that is arranged in the floating structure to measure a difference in temperature between the substrate and the floating structure. A second member having a lower emissivity than a first member surrounding the heat generator and the temperature sensor is formed at least on a surface of the floating structure by being joined to the first member.

Abstract: Disclosed herein is a solid-state imaging device including: a sensor element having a plurality of pixels each having a photoelectric conversion section; and a logic element attached to the sensor element in such a manner as to be stacked on the sensor element face-to-face and provided with a pad electrode. In a stacked body of the sensor and logic elements, a pad opening is provided above the top surface of the pad electrode facing the sensor element, and a pad periphery guard ring is provided to surround the side portion of the pad opening. The pad periphery guard ring is formed by integrally filling, on the side of the pad opening, an entire trench that is at least as deep as the pad opening with a metal material.

Abstract: Pixel sensor cells, methods of fabricating pixel sensor cells, and design structures for a pixel sensor cell. The pixel sensor cell has a gate structure that includes a gate dielectric and a gate electrode on the gate dielectric. The gate electrode includes a layer with first and second sections that have a juxtaposed relationship on the gate dielectric. The second section of the gate electrode is comprised of a conductor, such as doped polysilicon or a metal. The first section of the gate electrode is comprised of a metal having a higher work function than the conductor comprising the second section so that the gate structure has an asymmetric threshold voltage.

Abstract: A system is provided for heating or cooling discrete, linearly conveyed substrates having a gap between a trailing edge of a first substrate and a leading edge of a following substrate in a conveyance direction. The system includes a chamber, and a conveyor operably configured within the chamber to move the substrates through at a conveyance rate. A plurality of individually controlled temperature control units, for example heating or cooling units, are disposed linearly within the chamber along the conveyance direction. A controller is in communication with the temperature control units and is configured to cycle output of the temperature control units from a steady-state temperature output as a function of the spatial position of the conveyed substrates within the chamber relative to the temperature control units so as to decrease temperature variances in the substrates caused by movement of the substrates through the chamber.

Abstract: A photovoltaic device includes a substrate, a first electrode, a second electrode, and an active layer between the first electrode and the second electrode. The active layer comprises a polyarylamine biscarbonate ester of Formula (I): wherein Ar1, Ar2, Ar3, Ar4, R, m, y, and n are as described herein. The photovoltaic device can be fabricated in an ambient environment and does not need significant processing.

Abstract: A photovoltaic module has solar cells electrically interconnected by string ribbons and bus ribbons adhered to a dielectric strip are located on both ends of the solar cell strings and are electrically connected to the string ribbons. The bus ribbon assembly includes a dielectric strip having a length for disposal coextensively with the photovoltaic module side and the bus ribbons are configured on the dielectric strip to register with corresponding string ribbons when the dielectric strip is disposed coextensively with the photovoltaic module.

Abstract: There is provided a solar cell according to an exemplary embodiment includes: an upper substrate placed on cells of the solar cell; and a hologram pattern placed on the upper substrate. There is provided a manufacturing method of a solar cell according to another exemplary embodiment includes: forming an upper substrate on cells of the solar cell; and forming a hologram pattern on the upper substrate.

Abstract: A phosphor-contained solar cell comprises a photoelectric conversion layer for conversing the photo energy to electrical energy; a phosphor layer, disposed on at least one side of the photoelectric conversion layer, for improving the photoelectric conversion efficiency; the phosphor is up conversion phosphor or down conversion phosphor; wherein the up conversion phosphor is selected from X2Mo2O9:X or X2Mo2O9:X,X; the down-conversion phosphor is selected from JQX(PO4)2:X3+ or JQX(PO4)2:X2+,X2+; wherein X represents anyone of rare earth metal, J represents lithium, sodium or potassium, Q represents anyone of alkaline earth metal.

Abstract: A microelectronic image sensor assembly for backside illumination and method of making same are provided. The assembly includes a microelectronic element having contacts exposed at a front face and light sensing elements arranged to receive light of different wavelengths through a semiconductor region adjacent a rear face. The semiconductor region has a first region of material overlying the first light sensing element and a second region of material overlying the second light sensing element such that the first and second wavelengths are able to pass through the first and second regions, respectively, and reach the first and second light sensing elements with substantially the same intensity.

Abstract: In a method for manufacturing a semiconductor device, a process of providing a semiconductor wafer having a wiring layer having conductive patterns and a plurality of insulation films containing a first insulation film surrounding side surfaces of the conductive patterns are provided. After the process of providing the semiconductor wafer, a process of removing some regions of the plurality of insulation films to form openings is provided. Herein, the first insulation film is disposed to a position closer to the circumference of the semiconductor wafer than a position closest to the outermost circumference of the wafer among the arrangement positions of the conductive patterns.

Abstract: Embodiments of the invention generally relate to photovoltaic devices and more specifically, to metallic contacts disposed on photovoltaic devices and to the fabrication processes for forming such metallic contacts. In one aspect, a method for contact patterning on a photovoltaic device includes providing a semiconductor structure that includes a front contact layer and a window layer underneath the front contact layer, where the window layer also acts as an etch stop layer. At least one metal layer is deposited on the front contact layer, and a resist is applied on portions of the at least one metal layer. The at least one metal layer and the front contact layer are etched through to achieve the desired metallization.

Abstract: A solar cell module includes a solar cell string including at least two solar cells for generating electricity from sun light; a first sealing member and a second sealing member for sealing a front surface and a rear surface of the solar cell string, respectively; a front glass positioned on the first sealing member for protecting the front surface of the solar cell module; and a back sheet positioned on the second sealing member for protecting the rear surface of the solar cell module. Here, the back sheet includes an outer surface being an even surface including at least one of a plurality of dented portions and a plurality of protruded portions.

Abstract: A phase change memory device resistant to stack pattern collapse is presented. The phase change memory device includes a silicon substrate, switching elements, heaters, stack patterns, bit lines and word lines. The silicon substrate has a plurality of active areas. The switching elements are connected to the active areas. The heaters are connected to the switching elements. The stack patterns are connected to the heaters. The bit lines are connected to the stack patterns. The word lines are connected to the active areas of the silicon substrate.

Abstract: Single source precursors or pre-copolymers of single source precursors are subjected to microwave radiation to form particles of a I-III-VI2 material. Such particles may be formed in a wurtzite phase and may be converted to a chalcopyrite phase by, for example, exposure to heat. The particles in the wurtzite phase may have a substantially hexagonal shape that enables stacking into ordered layers. The particles in the wurtzite phase may be mixed with particles in the chalcopyrite phase (i.e., chalcopyrite nanoparticles) that may fill voids within the ordered layers of the particles in the wurtzite phase thus produce films with good coverage. In some embodiments, the methods are used to form layers of semiconductor materials comprising a I-III-VI2 material. Devices such as, for example, thin-film solar cells may be fabricated using such methods.

Abstract: The present invention is a method and technique (apparatus) to improve the efficiency of the chemical and physical types of photovoltaics. All types of photovoltaics suffer from the build-up of counter-electrons, termed p-type electrons. The p-type electrons induce a potential break to the main potential of the photovoltaic, i.e. causing a reduction to the converted power. The application of the oxidant layer to the p-type semiconductor of the photovoltaic should reduce the p-type electrons from moving in the external circuit, therefore increases the overall efficiency.

Abstract: Methods for forming backside illuminated (BSI) image sensors having metal redistribution layers (RDL) and solder bumps for high performance connection to external circuitry are provided. In one embodiment, a BSI image sensor with RDL and solder bumps may be formed using a temporary carrier during manufacture that is removed prior to completion of the BSI image sensor. In another embodiment, a BSI image sensor with RDL and solder bumps may be formed using a permanent carrier during manufacture that partially remains in the completed BSI image sensor. A BSI image sensor may be formed before formation of a redistribution layer on the front side of the BSI image sensor. A redistribution layer may, alternatively, be formed on the front side of an image wafer before formation of BSI components such as microlenses and color filters on the back side of the image wafer.

Abstract: A photoelectric conversion module includes: a photoelectric conversion element and an IC chip mounted on a mounting surface of a substrate; and an electrode provided on a side surface of the substrate, electrically connected to the IC chip, and having a concave shape sunk deeper than other portions of the side surface of the substrate.

Abstract: The invention relates to a process of bonding by molecular adhesion of two layers, such as wafers of semiconductor material, wherein propagation of a first bonding wave is initiated from a pressure point applied to at least one of the two layers, and wherein the first bonding wave step is followed by propagating a second bonding wave over an area, for example, in the vicinity of the pressure point. Propagation of the second bonding wave may be obtained through the interposing of a separation element between the two wafers and the withdrawal of the element, for example, after the beginning of the first bonding wave propagation.

Abstract: A photovoltaic solar collector is mounted to a profiled external sheet of an underlying composite insulating panel. The solar collector comprises a photovoltaic sheet and a protective translucent cover for the photovoltaic sheet. A first adhesive layer is provided between the photovoltaic sheet and the translucent cover. A second adhesive layer is provided between the underside of the photovoltaic sheet and the external surface of the composite panel upper or external sheet. The adhesive layers may be of the same hot melt adhesive. In the invention sheets of the photovoltaic, the adhesive, and the cover are drawn from supply reels, are cut to length, and then laid on top of the upper sheet of the insulated panel. Using a pressure laminating process the various layers are heated and pressed to adhere to and conform to the outer sheet of the insulated panel.

Abstract: A back-illuminated semiconductor imaging device on a semiconductor-on-insulator substrate is disclosed. The device includes an insulator layer, a semiconductor substrate having an interface with the insulator layer, an epitaxial layer grown on the semiconductor substrate by epitaxial growth; and one or more imaging components in the epitaxial layer. The semiconductor substrate and the epitaxial layer exhibit a net doping concentration profile having a maximum value at a predetermined distance from the interface which decreases monotonically on both sides of the profile. The doping profile between the interface with the insulation layer and the peak of the doping profile functions as a “dead band” to prevent dark current carriers from penetrating to the front side of the device.

Abstract: A photoelectric conversion device which is a semiconductor device comprising a first conductive layer having a first conductivity type; a second conductive layer formed on the first conductive layer and having a second conductivity type; and a photosensitizing layer formed between the first conductive layer and the second conductive layer, wherein charge carriers generated by photoelectric conversion in the photosensitizing layer are freely movable to at least one of the first conductive layer and the second conductive layer.

Abstract: A solar cell formation method, and resulting structure, having a first film and a barrier film over a surface of a doped semiconductor, wherein the optical and/or electrical properties of the first film are transformed in-situ such that a resulting transformed film is better suited to the efficient functioning of the solar cell; wherein portions of the barrier film partially cover the first film and substantially prevent transformation of first film areas beneath the portions of the barrier film.

Abstract: A photon source comprising a photon source body, said photon source body comprising at least one quantum dot; carrier injection means for injecting carriers into said at least one quantum dot and change of state means for changing the state of the carriers within the quantum dot after a predetermined time duration, the carrier injection means injecting carriers which are configured to allow emission of radiation by radiative recombination.

Abstract: An object is to reduce the breakage of appearance such as a crack, a split and a chip by external stress of a semiconductor device. Another object is that manufacturing yield of a thin semiconductor device increases. The semiconductor device includes a plurality of semiconductor integrated circuits mounted on the interposer. Each of the plurality of semiconductor integrated circuits includes a light transmitting substrate which have a step on the side surface and in which the width of one section of the light transmitting substrate is narrower than that of the other section of the light transmitting substrate when the light transmitting substrate is divided at a plane including the step, a semiconductor element layer including a photoelectric conversion element provided on one surface of the light transmitting substrate, and a chromatic color light transmitting resin layer which covers the other surface of the light transmitting substrate and a part of the side surface.

Abstract: Pixel sensor cells, methods of fabricating pixel sensor cells, and design structures for a pixel sensor cell. A transistor in the pixel sensor cell has a gate structure that includes a gate dielectric with a thick region and a thin region. A gate electrode of the gate structure is formed on the thick region of the gate dielectric and the thin region of the gate dielectric. The thick region of the gate dielectric and the thin region of the gate dielectric provide the transistor with an asymmetric threshold voltage.

Abstract: The invention relates to a chemical etching composition and to methods to produce a photovoltaic cell with transparent regions. The methods comprise a step to locally dispense an etching composition on the photovoltaic cell in a pattern, or adjacent to the edge thereof; an optional step to apply heat to the cell; and a step to remove the etching composition. The methods are further characterized by the chemical removal of one or more chemically distinctive layers of the photovoltaic cell where the etching composition is applied. The methods may be used to produce a thin film photovoltaic panel.

Abstract: A charge transfer transistor includes: a first diffusion region and a second diffusion region; a gate for controlling a charge transfer from the first diffusion region to the second diffusion region by a control signal; and a potential well incorporated under the gate, wherein the first diffusion region is a pinned photodiode. A pixel of an image sensor includes: a photodiode for generating and collecting a photo generated charge; a floating diffusion region for serving as a photo generated charge sensing node; a transfer gate for controlling a charge transfer from the photodiode to the floating diffusion region by a control signal; and a potential well incorporated under the transfer gate.