Abstract: Disclosed is a solar cell apparatus. The solar cell apparatus includes a substrate, and a solar cell on the substrate. The substrate includes a support layer below the solar cell, and a reinforcement part provided below the support layer and having an open region to expose a bottom surface of the support layer.

Abstract: Disclosed is a fluorescent material for converting wavelengths used in a light transmitting layer of a solar cell module, by mixing a fluorescent substance and a vinyl compound. Also, disclosed is a resin composition for converting wavelengths by polymerizing the vinyl compound of the fluorescent material for converting wavelengths and then mixing it with a transparent dispersion medium resin. Therefore, there can be provided a fluorescent material for converting wavelengths capable of converting a light that contributes less to solar energy generation in the incident solar radiation, to a wavelength that contributes significantly to energy generation, as well as utilizing the solar radiation efficiently and stably without deteriorating, a resin composition for converting wavelengths and methods for producing thereof.

Abstract: The composition for forming an n-type diffusion layer in accordance with the present invention contains a donor element-containing glass powder and a dispersion medium. An n-type diffusion layer and a photovoltaic cell having an n-type diffusion layer are prepared by applying the composition for forming an n-type diffusion layer, followed by a thermal diffusion treatment.

Abstract: Embodiments of the present invention are directed to an in-line system and process for forming a selective emitter solar cell. In one embodiment, a liquid dopant material is applied to a silicon substrate and dried to at least a semi-solid state. In another embodiment, a dopant material is deposited on a silicon substrate using a chemical vapor deposition process. A laser is then used to thermally excite regions of the substrate to drive the dopant atoms from the dopant material deep into the substrate to form highly doped regions. The substrate is then thermally processed to form a lightly doped emitter region and a shallow p-n junction in the remaining field region of the substrate. Conductive contacts are then deposited on the highly doped regions.

Abstract: A hole-based ultra-deep photodiode in a CMOS image sensor and an associated process are disclosed. A p-type substrate is grounded or connected to a negative power supply. An n-type epitaxial layer is grown on the p-type substrate, and is connected to a positive power supply. An ultra-deep p-type photodiode implant region is formed in the n-type epitaxial layer. Thermal steps are added to insure a smooth and deep doping profile.

Abstract: A backside illuminated imaging sensor with a seal ring support includes an epitaxial layer having an imaging array formed in a front side of the epitaxial layer. A metal stack is coupled to the front side of the epitaxial layer, wherein the metal stack includes a seal ring formed in an edge region of the imaging sensor. An opening is included that extends from the back side of the epitaxial layer to a metal pad of the seal ring to expose the metal pad. The seal ring support is disposed on the metal pad and within the opening to structurally support the seal ring.

Abstract: A superlattice-based infrared absorber and the matching electron-blocking and hole-blocking unipolar barriers, absorbers and barriers with graded band gaps, high-performance infrared detectors, and methods of manufacturing such devices are provided herein. The infrared absorber material is made from a superlattice (periodic structure) where each period consists of two or more layers of InAs, InSb, InSbAs, or InGaAs. The layer widths and alloy compositions are chosen to yield the desired energy band gap, absorption strength, and strain balance for the particular application. Furthermore, the periodicity of the superlattice can be “chirped” (varied) to create a material with a graded or varying energy band gap.

Abstract: Photovoltaic cells comprising an active layer comprising, as p-type material, conjugated polymers such as polythiophene and regioregular polythiophene, and as n-type material at least one fullerene derivative. The fullerene derivative can be C60, C70, or C84. The fullerene also can be functionalized with indene groups. Improved efficiency can be achieved.

Abstract: A method is described for manufacturing solar cells having a selective emitter. Wafers free of saw damage are initially provided. A doping source is then applied over the entire surface of the wafer and the dopant is initially lightly diffused into the wafer until a first layer resistance area is obtained. The applied doping source is subsequently structured, only those areas which essentially correspond to the sections on the wafer to be subsequently contacted remaining as a result of the structuring.

Abstract: A method of fabricating a solar cell is provided. A first type semiconductor substrate having a first surface and a second surface is provided. A second type doped diffusion region is formed in parts of the first type semiconductor substrate. The second type doped diffusion region extends within the first type semiconductor substrate from the first surface. An anti-reflection coating (ARC) in contact with second type doped diffusion region is formed over the first surface. A conductive paste including conductive particles and dopant is formed over the ARC. A co-firing process for enabling the conductive paste to penetrate the ARC to form a first contact conductor embedded in the ARC is performed. During the co-firing process, the dopant diffuses into the second type doped diffusion region and a second type heavily doped diffusion region is formed. A second contact conductor is formed on the second surface.

Abstract: Disclosed are methods and apparatus for masking of substrates for deposition, and subsequent lifting of the mask with deposited material. Masking materials are utilized that can be used in high temperatures and vacuum environment. The masking material has minimal outgassing once inside a vacuum chamber and withstand the temperatures during deposition process. The mask is inkjeted over the wafers and, after deposition, removed using agitation, such as ultrasonic agitation, or using laser burn off.

Abstract: A process of forming optical sensors includes sealing an imaging portion of each of a plurality of optical sensors on a sensor wafer with a transparent material. The operation of sealing leaves a bonding portion of each of the optical sensors exposed. The process further includes cutting the wafer into a plurality of image sensor dies after sealing the optical sensors such that each image sensor die includes one of the optical sensors sealed with a corresponding portion of the transparent material.

Abstract: A manufacturing method of thin film solar cells and thin film solar cells thereof. The thin film solar cells comprise a substrate, an amorphous silicon layer, a first conductive layer, a stacked I-layer, a second conductive layer and a back contact layer. The amorphous silicon layer is on the substrate. The first conductive layer is on the amorphous silicon layer. The stacked I-layer is on the first conductive layer; the stacked I-layer from bottom to top is sequentially stacked by three different deposition rate I-layers: a first I-layer, a second I-layer and a third I-layer. Compared with the first and the third I-layer, the second I-layer has deposition rate higher than those of the other two I-layers. The second conductive layer is on the stacked I-layer. The back contact layer is on the second conductive layer for getting electric energy.

Abstract: The invention relates to a composition for printing conductor tracks onto a substrate, especially for solar cells, using a laser printing process, which composition comprises 30 to 90% by weight of electrically conductive particles, 0 to 7% by weight of glass frit, 0 to 8% by weight of at least one matrix material, 0 to 8% by weight of at least one organometallic compound, 0 to 5% by weight of at least one additive and 3 to 69% by weight of solvent. The composition further comprises 0.5 to 15% by weight of nanoparticles as absorbents for laser radiation, which nanoparticles are particles of silver, gold, platinum, palladium, tungsten, nickel, tin, iron, indium tin oxide, titanium carbide or titanium nitride. The composition comprises not more than 1% by weight of elemental carbon.

Abstract: A germanium-containing layer is provided between a p-doped silicon-containing layer and a transparent conductive material layer of a photovoltaic device. The germanium-containing layer can be a p-doped silicon-germanium alloy layer or a germanium layer. The germanium-containing layer has a greater atomic concentration of germanium than the p-doped silicon-containing layer. The presence of the germanium-containing layer has the effect of reducing the series resistance and increasing the shunt resistance of the photovoltaic device, thereby increasing the fill factor and the efficiency of the photovoltaic device. In case a silicon-germanium alloy layer is employed, the closed circuit current density also increases.

Abstract: A photoelectric element including a transparent bottom electrode, a photosensitive layer, a first electrode, a second electrode and a transparent top electrode is provided. The photosensitive layer is located above the transparent bottom electrode. The first electrode and the second electrode are disposed on the photosensitive layer. The transparent top electrode is located above the photosensitive layer.

Abstract: A method of fabricating organic solar panels with transparent contacts. The method uses a layer-by-layer spray technique to create the anode layer. The method includes placing the substrate on a flat magnet, aligning a magnetic shadow mask over the substrate, applying photoresist to the substrate using spray photolithography, etching the substrate, cleaning the substrate, spin coating a tuning layer on substrate, spin coating an active layer of P3HT/PCBM on the substrate, spray coating the substrate with a modified PEDOT solution, and annealing the substrate.

Abstract: Embodiments relate to detector imaging arrays with highly robust mounting of scintillators (e.g., scintillating phosphor screens) to imaging arrays. For example, the detector arrays comprise spacers to define a space between or separate the scintillator from the imaging array. Embodiments according to present teachings can provide projection radiographic imaging apparatuses, including a scintillator, an imaging array including a plurality of pixels formed over a substrate, and a plurality of spacers disposed between an active surface of the imaging array and the scintillator. The spacers can reduce or prevent contact between a surface of the scintillator and the active surface of the imaging array, strengthen or control attachment therebetween, or adjust light transmittance therebetween.

Abstract: Low cost large area photodetector arrays are provided. In a first embodiment, the photodetectors comprise an inorganic photoelectric conversion material formed in a single thick layer of material. In a second embodiment, the photodetectors comprise a lamination of several thin layers of an inorganic photoelectric conversion material, the combined thickness of which is large enough to absorb incoming x-rays with a high detector quantum efficiency. In a third embodiment, the photodetectors comprise a lamination of several layers of inorganic or organic photoelectric conversion material, wherein each layer has a composite scintillator coating.

Abstract: A photodiode assembly includes a semiconductor substrate, a photodiode cell, a ground diffusion region, and a guard band. The photodiode cell includes a first volume of the substrate doped with a first type of dopant. The diffusion region includes a second volume of the substrate that is doped with a second, opposite type of dopant. The guard band is disposed in the substrate and at least partially extends around an outer periphery of the photodiode cell. The guard band includes a third volume of the substrate that is doped with the first type of dopant. At least one of the ground diffusion region or the guard band is conductively coupled with a ground reference to conduct one or more of electrons or holes that drift from the photodiode cell through the substrate. The guard band is disposed closer to the photodiode cell than the ground diffusion region.

Abstract: A method for manufacturing a solar cell, includes: forming, on a silicon substrate whose conductivity type is p-type or n-type, a silicon layer including a dopant whose conductivity type is different from that of the silicon substrate; and diffusing the dopant included in the silicon layer into the silicon substrate by heat-treating the silicon layer.

Abstract: A process for packaging micro-electro-mechanical systems (MEMS) devices comprises providing a lower cover wafer and an upper cover wafer, providing a semiconductor wafer including a plurality of MEMS devices on a substrate layer, bonding the semiconductor wafer to a first surface of the lower cover wafer, and bonding a second surface of the upper cover wafer to the semiconductor wafer. The first surface of the lower cover wafer and the second surface of the upper cover wafer define a plurality of hermetically sealed cavity sections when bonded to the semiconductor wafer such that each of the MEMS devices is located inside one of the sealed cavity sections. A plurality of holes are formed that extend from the first surface of the upper cover wafer to the second surface of the upper cover wafer after the upper cover wafer is bonded to the semiconductor wafer. A metal lead layer is then deposited in each of the holes to provide an electrical connection with the MEMS devices.

Abstract: A movable jig for a silicon-based thin film solar cell comprises parallel electrode plates (203,208), a supporting frame and a signal feed-in assembly (201). The supporting frame is a movable frame and its side frame (216) is grounded. A shield device is set on the jig or among jig arrays themselves for preventing from being disturbed. The signal feed-in assembly is a conductor and its middle portion and head portion form a ladder cylinder, and one end surface (201-1) of the signal feed-in assembly is triangular and can surface contact and connect with a sunken triangular feed-in port (203-1) in the center area of the back surface of the cathode plate (203) of the electrode plates, so the radio frequency/the very high frequency power supply signal can be fed in.

Abstract: A movable deposition box (02) for silicon-based thin film solar cell comprises an electrode array composed of at least a group of cathode plates (203) and a piece of anode plate (208) which are set in movable chamber, wherein a feeding socket (203-1) is positioned on a circular or semicircular concave surface in the center area on the backside of the cathode plates (203), a circular or semicircular end face (201-1) of a feeding component (201) which has a flat middle part contacts the signal feeding socket (203-1) and feeds in RF/VHF power signal, the anode plate (208) is grounded, and a shield cover (204) of the cathode plate has through-hole (204-1) and is insulated from the cathode plate (203).

Abstract: In one aspect of the present invention, a transparent electrode, is presented. The transparent electrode includes a substrate and a transparent layer disposed on the substrate. The transparent layer includes (a) a first region including cadmium tin oxide; (b) a second region including tin and oxygen; and (c) a transition region including cadmium, tin, and oxygen interposed between the first region and the second region, wherein an atomic ratio of cadmium to tin in the transition region varies across a thickness of the transition region. The second region further has an electrical resistivity greater than an electrical resistivity of the first region. A photovoltaic device, a photovoltaic module, a method of making is also presented.

Abstract: It is an object to provide a flexible light-emitting device with long lifetime in a simple way and to provide an inexpensive electronic device with long lifetime using the flexible light-emitting device. A flexible light-emitting device is provided, which includes a substrate having flexibility and a light-transmitting property with respect to visible light; a first adhesive layer over the substrate; an insulating film containing nitrogen and silicon over the first adhesive layer; a light-emitting element including a first electrode, a second electrode facing the first electrode, and an EL layer between the first electrode and the second electrode; a second adhesive layer over the second electrode; and a metal substrate over the second adhesive layer, wherein the thickness of the metal substrate is 10 ?m to 200 ?m inclusive. Further, an electronic device using the flexible light-emitting device is provided.

Abstract: A solid-state image sensor includes a pixel region and peripheral circuit region arranged on a semiconductor substrate. The pixel region includes pixels. Each pixel includes a photoelectric conversion element and an amplification MOS transistor that outputs a signal corresponding to charges of the photoelectric conversion element to a column signal line. The peripheral circuit region includes a circuit that drives the pixel or processes the signal output to the column signal line. A resistance of a source region of the amplification MOS transistor is lower than a resistance of a drain region of the amplification MOS transistor.

Abstract: Provided is a method of fabricating a semiconductor device. The method includes providing a device substrate having a front side and a back side, the device substrate having a first refractive index, forming an embedded target over the front side of the device substrate, forming a reflective layer over the embedded target, forming a media layer over the back side of the device substrate, the media layer having a second refractive index less than the first refractive index, and projecting radiation through the media layer and the device substrate from the back side so that the embedded target is detected for a semiconductor process.

Abstract: Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus inhibits deposition on windows or other microwave transmission elements that couple microwave energy to deposition species. The apparatus includes a microwave applicator with conduits passing therethrough that carry deposition species. The applicator transfers microwave energy to the deposition species to transform them to a reactive state conducive to formation of a thin film material. The conduits physically isolate deposition species that would react to form a thin film material at the point of microwave power transfer. The deposition species are separately energized and swept away from the point of power transfer to prevent thin film deposition. The invention allows for the ultrafast formation of silicon-containing amorphous semiconductors that exhibit high mobility, low porosity, little or no Staebler-Wronski degradation, and low defect concentration.

Abstract: An apparatus and associated method are provided. A first silicon layer having at least one of an associated passivation layer and barrier is included. Also included is a composite anti-reflection layer including a stack of layers each with a different thickness and refractive index. Such composite anti-reflection layer is disposed adjacent to the first silicon layer.

Abstract: A method of producing a photoelectric conversion device having a multilayer structure formed on a substrate, the multilayer structure including a lower electrode, a photoelectric conversion layer made of a compound semiconductor layer, an n-type buffer layer made of a compound semiconductor layer, and a transparent conductive layer, is disclosed. A reaction solution, which is an aqueous solution containing an n-type dopant element, at least one of ammonia and an ammonium salt, and thiourea, is prepared, the n-type dopant is diffused into the photoelectric conversion layer by immersing the substrate including the photoelectric conversion layer in the reaction solution controlled to a temperature in the range from 20° C. to 45° C.; and the buffer layer is deposited on the photoelectric conversion layer by immersing the substrate including the photoelectric conversion layer subjected to the diffusion step in the reaction solution controlled to a temperature in the range from 70° C. to 95° C.

Abstract: Provided are an image sensor and a method of sensing the same. The image sensor includes: a light receiving device; a signal conversion unit including a transfer transistor having a plurality of transfer gates and for converting photocharges generated by the light receiving device into a voltage to output the voltage; and a sensing control unit for generating at least two reset signals and/or at least two transfer signals applied to the transfer gates of the transfer transistor during a one-time photosensing cycle. The image sensor is obtained by changing the structure and driving method of a transfer transistor of a typical 4-transistor CMOS image sensor and employs a deep depletion operation and a multiple reset operation, thereby reducing an image lag and increasing the well capacity of the light receiving device.

Abstract: A backside-illuminated active pixel sensor array in which crosstalk between adjacent pixels is prevented, a method of manufacturing the backside-illuminated active pixel sensor array, and a backside-illuminated image sensor including the backside-illuminated active pixel sensor array are provided. The backside-illuminated active pixel sensor array includes a semiconductor substrate of a first conductive type that comprises a front surface and a rear surface, light-receiving devices for generating charges in response to light incident via the rear surface, and one or more pixel isolating layers for forming boundaries between pixels by being disposed between the adjacent light-receiving devices, a wiring layer disposed on the front surface of the semiconductor substrate, and a light filter layer disposed on the rear surface of the semiconductor substrate, wherein a thickness of the one or more pixel isolating layers decreases from a point in the semiconductor substrate toward the rear surface.

Abstract: An electro-optical semiconductor device having a semiconductor die including an active region for detecting light which is covered by a cover. The cover has a transparent pane over the active region, and is supported by a standoff. The standoff sits on the die on a perimeter region between the active region and a plurality of bond pads disposed around the periphery of the die.

Abstract: A solar cell includes a transparent upper electrode for conducting electrons and for allowing incoming photons of light to pass therethrough. An exciton trapping region is disposed proximate the upper electrode, and includes graphene and an exciton trapping dye. The trapping dye traps captured excitons, and the graphene rapidly conducts freed electrons therefrom to the upper electrode. A pigment layer, in close proximity to the exciton trapping region, includes one or more pigment dyes that absorb light photons and emit excitons for transmission to the trapping dye. Excitons emitted by a first pigment dye can further trigger emission of excitons by a second pigment dye. A backing electrode is electrically coupled to the pigment layer via an anionic polyelectrolyte for transporting electrons to the pigment layer to replenish electrons conducted by the transparent upper electrode.

Abstract: Provided is an image sensor device. The image sensor device includes a pixel formed in a substrate. The image sensor device includes a first micro-lens embedded in a transparent layer over the substrate. The first micro-lens has a first upper surface that has an angular tip. The image sensor device includes a color filter that is located over the transparent layer. The image sensor device includes a second micro-lens that is formed over the color filter. The second micro-lens has a second upper surface that has an approximately rounded profile. The pixel, the first micro-lens, the color filter, and the second micro-lens are all at least partially aligned with one another in a vertical direction.

Abstract: A photovoltaic device in which leakage current is suppressed and the conversion efficiency is improved. A photovoltaic device (100) comprising a photovoltaic layer (3) comprising two electric power generation cell layers (91, 92) disposed on a substrate (1), and an intermediate contact layer (5) interposed between the two electric power generation cell layers (91, 92), wherein the intermediate contact layer (5) comprises Ga2O3-doped ZnO as the main component and also comprises nitrogen atoms, and the sheet resistance of the intermediate contact layer (5) following exposure to a hydrogen plasma is not less than 1 k?/square and not more than 100 k?/square.

Abstract: A method includes: forming a transfer gate on a semiconductor substrate; forming a first ion implantation region on a first side of the transfer gate; forming a second ion implantation region on the first side of the transfer gate such that the second ion implantation region encloses the first ion implantation region; forming a third ion implantation region along a surface of the semiconductor substrate; and forming a floating diffusion region at a second side of the transfer gate.

Abstract: A solid-state imaging device includes a substrate, a through-hole, a vertical gate electrode, and a charge fixing film. A photoelectric conversion unit generating signal charges in accordance with the amount of received light is formed in the substrate. The through-hole is formed from a front surface side through a rear surface side of the substrate. The vertical gate electrode is formed through a gate insulating film in the through-hole and reads out the signal charges generated by the photoelectric conversion unit to a reading-out portion. The charge fixing film has negative fixed charges formed to cover a portion of the inner circumferential surface of the through-hole at the rear surface side of the substrate while covering the rear surface side of the substrate.

Abstract: A photoelectric conversion element has a structure in which an electrolyte layer composed of a porous film containing an electrolyte solution is provided between a porous photoelectrode and a counter electrode.

Abstract: A method of fabricating a workpiece is disclosed. A material defining apertures is applied to a workpiece. A species is introduced to the workpiece through the apertures and the material is removed. For example, the material may be evaporated, may form a volatile product with a gas, or may dissolve when exposed to a solvent. The species may be introduced using, for example, ion implantation or gaseous diffusion.

Abstract: Pixel sensor cells, e.g., CMOS optical imagers, methods of manufacturing and design structures are provided with isolation structures that prevent carrier drift to diffusion regions. The pixel sensor cell includes a photosensitive region and a gate adjacent to the photosensitive region. The pixel sensor cell further includes a diffusion region adjacent to the gate. The pixel sensor cell further includes an isolation region located below a channel region of the gate and about the photosensitive region, which prevents electrons collected in the photosensitive region to drift to the diffusion region.

Abstract: A sensor wafer may be configured for in-situ measurements of parameters during an etch process. The sensor wafer may include a substrate, a cover, and one or more components positioned between the substrate and the cover. An etch-resistant coating is formed on one or more surfaces of the cover and/or substrate. The coating is configured to resist etch processes that etch the cover and/or substrate for a longer period than standard thin film materials of the same or greater thickness than the protective coating.

Abstract: A thin film solar cell and a method fabricating thin film solar cells on flexible substrates. The method includes including providing a flexible polymeric substrate, depositing a photovoltaic precursor on a surface of the substrate, such as CdTe, ZrTe, CdZnTe, CdSe or Cu(In,Ga)Se2, and exposing the photovoltaic precursor to at least one 0.5 microsecond to 10 second pulse of predominately infrared light emitted from a light source having a power output of about 20,000 W/cm2 or less to thermally convert the precursor into a crystalline photovoltaic material having a photovoltaic efficiency of greater than one percent, the conversion being carried out without substantial damage to the substrate.

Abstract: Disclosed is a cable for use in a concentrating photovoltaic module. The cable includes at least one strand wrapped with an optically pervious or reflective sheath. The pervious sheath is made of a material that exhibits a penetration rate of 90% and survives a temperature of at least 140 degrees Celsius. The reflective sheath is made of a material that exhibits a reflection rate of 95% and survives a temperature of at least 140 degrees Celsius. The cable is used to connect an anode of the concentrating photovoltaic module to a cathode of the same. The material of the reflective sheath may be isolating.

Abstract: Aspects of the invention provide a solar cell module with a pressure sensitive adhesive member. The solar cell module with a pressure sensitive adhesive member can include a flexible solar cell module and a pressure sensitive adhesive member that is arranged so as to cover at least a portion of the rear surface of the flexible solar cell module. The storage modulus G? of the pressure sensitive adhesive member can be in the range of 0.02 MPa to 0.7 MPa under the use conditions of the flexible solar cell module. Another aspect of the invention can provide a support member integrated solar cell module including a solar cell module with a pressure sensitive adhesive member and a support member integrated with each other.

Abstract: A method for forming a laminated photovoltaic structure includes providing a sheet of transparent material having light concentrating features, disposing adhesive material adjacent to the sheet of transparent material, disposing photovoltaic strips adjacent to the adhesive material, wherein the photovoltaic strips are positioned relative to the sheet of transparent material in response to exitant light characteristics of the light concentrating features, wherein photovoltaic strips are coupled via associated bus bars, wherein gap regions are located between bus bars of neighboring photovoltaic strips, disposing a rigid layer of material adjacent to the photovoltaic strips to form a composite photovoltaic structure; and thereafter laminating the composite photovoltaic structure to fill the gap regions with adhesive material and to form the laminated photovoltaic structure, wherein adhesive material adheres to the bus bars.

Abstract: Methods of fabricating solar cells are described. A porous layer may be formed on a surface of a substrate, the porous layer including a plurality of particles and a plurality of voids. A solution may be dispensed into one or more regions of the porous layer to provide a patterned composite layer. The substrate may then be heated.

Abstract: A display substrate includes a base substrate, a barrier pattern, a source electrode, a drain electrode, a semiconductor layer, an insulating layer, and a gate electrode. The barrier pattern protrudes from the base substrate. The source and gate electrodes are formed adjacent to opposite sides of the barrier pattern on the base substrate. The semiconductor layer is provided on the barrier pattern to connect the source electrode with the drain electrode, and the insulating layer covers the semiconductor layer, the source electrode, and the drain electrode. The gate electrode is provided on the insulating layer, and is overlapped with the semiconductor layer.

Abstract: A thermoelectric module capable of minimizing thermally and physically induced stress includes a pair of substrates having a plurality of electrically conductive contacts disposed on opposing faces, a plurality of P-type and N-type thermoelectric elements interposed between the pair of substrates forming a thermoelectric element circuit, and one or more of a stress minimizing structural element interposed between the pair of substrates where the stress minimizing structural element has a first surface fixed to one of the pair of substrates and a second surface fixed to the other of the pair of substrates in locations between the pair of substrates that minimize the effects of physical and thermal stresses on the plurality of P-type and N-type thermoelectric elements.