Abstract: Photovoltaic devices and techniques for enhancing efficiency thereof are provided. In one aspect, a photovoltaic device is provided. The photovoltaic device comprises a photocell having a first photoactive layer and a second photoactive layer adjacent to the first photoactive layer so as to form a heterojunction between the first photoactive layer and the second photoactive layer; and a plurality of high-aspect-ratio nanostructures on one or more surfaces of the second photoactive layer. The plurality of high-aspect-ratio nanostructures are configured to act as a scattering media for incident light. The plurality of high-aspect-ratio nanostructures can also be configured to create an optical resonance effect in the incident light.

Abstract: Photovoltaic devices and techniques for enhancing efficiency thereof are provided. In one aspect, a photovoltaic device is provided. The photovoltaic device comprises a photocell having a photoactive layer and a non-photoactive layer adjacent to the photoactive layer so as to form a heterojunction between the photoactive layer and the non-photoactive layer; and a plurality of high-aspect-ratio nanostructures on one or more surfaces of the photoactive layer. The plurality of high-aspect-ratio nanostructures are configured to act as a scattering media for incident light. The plurality of high-aspect-ratio nanostructures can also be configured to create an optical resonance effect in the incident light.

Abstract: A photovoltaic device has nanoparticles sandwiched between a conductive substrate and a charge selective transport layer. Each of the nanoparticles has a ligand shell attached to the nanoparticle core. A first type of ligand is electron rich and attached to one hemisphere of the nanoparticle core, while a second type of ligand is electron poor and attached to an opposite hemisphere of the core. Consequently, the ligand shell induces an electric field within the nanoparticle, enhancing the photovoltaic effect. The arrangement of ligands types on different sides of the nanoparticle is obtained by a process involving ligand substitution after adhering the nanoparticles to the conductive substrate.

Abstract: In a semiconductor device including a semiconductor substrate and at least one sensor element made of vanadium oxide formed over the semiconductor substrate, the sensor element is designed so that a density of a current flowing through the sensor element is between 0 and 100 ?A/?m2.

Abstract: A BST microwave device includes a single crystal oxide wafer. A silicon dioxide layer is formed on the single crystal oxide layer. A silicon substrate is bonded on the silicon dioxide layer. A BST layer is formed on the single crystal oxide layer.

Abstract: To provide an organic solar cell in which a light is preferably introduced from a side opposite to a substrate and the light thus introduced can be efficiently used. The organic solar cell including a substrate; a first electrode; an organic solid layer; and a second electrode, laminated in this order, wherein the second electrode is made from an alloy containing magnesium and has a thickness of 1 to 20 nm.

Abstract: A photoelectrochemical device and method using carbon nanotubes comprise highly electrically conductive carbon nanotubes formed at an interface between a transparent electrode and a metal oxide layer. According to the photoelectrochemical device and method, the interface resistance, which is caused due to an incomplete contact at the interface, is lowered and thus the electron mobility is improved, leading to high power conversion efficiency.

Abstract: A photovoltaic cell can include a dopant in contact with a semiconductor layer.

Abstract: An image sensor capable of reducing crosstalk between pixels is provided. The image sensor includes a photoelectric converter formed in a semiconductor substrate, an interlayer insulating layer formed on the semiconductor substrate, a plurality of structures formed on the interlayer insulating layer, each of the plurality of structures including an insulating pillar, a metal interconnection formed on the insulating pillar, and a spacer formed at both sides of the metal interconnection and both sides of the insulating pillar. The plurality of structures are spaced a predetermined interval apart from each other in a longitudinal direction. The image sensor further includes an intermetal insulating layer filling spaces between the plurality of structures and covering top surfaces of the plurality of structures.

Abstract: A structure having: a molecule of carboxymethyl amylose (CMA) in a super-helical conformation; cyanine molecules on the exterior surface of the CMA arranged in a J-aggregate formation; and a chromophore molecule in the interior space of the CMA.

Abstract: In a device for access control comprising an electrically actuable lock and a key (12, 16) the lock and/or the key (12, 16) have/has a power supply comprising at least one thin-film solar cell (6, 10, 11, 15, 20, 21) which is fitted or applied to an area of the key (12, 16) that is exposed to the light and/or of a part electrically connected to the lock or below an energy-transmissive area of the lock, of the key (12, 16) and/or of a part electrically connected to the lock or forms said area.

Abstract: A charge storage capacitor which is connected to various light sensitive and/or electrical elements of a CMOS imager, as well as methods of formation, are disclosed. The charge storage capacitor may be formed entirely over a field oxide region of the CMOS imager, entirely over an active area of a pixel sensor cell, or partially over a field oxide region and partially over an active pixel area of a pixel sensor cell.

Abstract: A photo detector device comprising a first layer comprising a first material, and a second layer arranged adjacent to the first layer, the second layer comprising strained silicon, wherein the second layer further comprises a light absorption region located substantially within the strained silicon, wherein the first or the second layer is arranged on a substrate.

Abstract: In layered structures, channel regions and light-interactive regions can include the same semiconductive polymer material, such as with an organic polymer. A light-interactive region can be in charge-flow contact with a contacting electrode region, and a channel region can, when conductive, provide an electrical connection between the contacting electrode region and other circuitry. For example, free charge carriers can be generated in the light-interactive region, resulting in a capacitively stored signal level; the signal level can be read out to other circuitry by turning on a transistor that includes the channel region. In an array of photosensing cells with organic thin film transistors, an opaque insulating material can be patterned to cover a data line and channel regions of cells along the line, but not extend entirely over the cells' light-interactive regions.

Abstract: Layered structures such as photosensing arrays include layers in which charge carriers can be transported. For example, a carrier-transporting substructure that includes a solution processing artifact can transport charge carriers that flow to or from it through charge-flow surface parts that are on electrically conductive regions of a circuitry substructure; the circuitry substructure can also have channel surface parts that are on semiconductive channel regions, with a set of the channel regions operating as acceptable switches in an application. Or a first substructure's surface can have carrier-active surface parts on electrode regions and line surface parts on line regions; a second substructure can include a transport layer on carrier-active surface parts and, over it, an electrically conductive layer; to prevent leakage, an open region can be defined in the electrically conductive layer over the line surface part and/or an electrically insulating layer portion can cover the line surface part.

Abstract: An imager having a pixel cell having an associated strained silicon layer. The strained silicon layer increases charge transfer efficiency, decreases image lag, and improves blue response in imaging devices.

Abstract: A method for manufacturing a TFT-array substrate includes forming a first conductive pattern layer including a gate line, a gate electrode, and a lower gate pad electrode using a first mask, forming a channel and a second conductive pattern layer including a source electrode, a drain electrode, a data line, a data pad electrode, and a middle gate pad electrode using a second mask, and forming a third conductive pattern layer including a pixel electrode, an upper gate pad electrode, and an upper data pad electrode using a third mask. A TFT-array substrate includes crossing gate lines and data lines, TFTs formed at the crossings of gate lines and data lines, pixel electrodes formed in regions defined by the crossing gate lines and data lines, data pad electrodes connected to the data lines, and gate pad electrodes connected to the gate lines.

Abstract: A flat screen detector has a substrate with a transistor matrix thereon, a photodetector, and a passivation layer. The photodetector includes a structured first electrode including a number of sub-electrodes, a second electrode, and a photoactive layer between the first and second electrodes. The passivation layer is located between the substrate having the transistor matrix and the first electrode.

Abstract: A solar cell, comprising: a substrate, including p-n doping structure formed within said substrate; material attached to the back of said substrate, where said material includes glass mixture, aluminum material, organic medium and additive. Wherein said glass needs to be formed by combining two or more glasses: the main composition for post-mixed glass should include Al2O3, Bi2O5, B2O3, SiO2, PbO, Tl2O3 and other metal and non-metal oxides. For the material composition, aluminum powder content is 60˜80 mass %, with approximately 90 to 99.99% purity. Additives include C10˜C24 stearic acid, with the content of less than 5 mass %. The C10˜C24 stearic acid may include oleic acid. Organic medium content is roughly 20˜35 mass %. Wherein said organic medium includes 60˜90 mass % ether class organic solvent, 10˜20 mass % cellulosic resin and 1˜5 mass % of leveling agent, rheological agent or thixotropic agent.

Abstract: A method of preparing a polymeric composition with photovoltaic properties comprises a step of blending, in a solvent, at least one electron donor type semiconductor polymeric material essentially in the form of nanofibrils and at least one electron acceptor type material in the solvent, said nanofibrils representing at least 10% by weight of the electron donor type semiconductor polymeric material, to polymeric compositions with photovoltaic properties, and to photovoltaic cells incorporating such polymeric compositions.

Abstract: Processing additives, as well as related compositions, photovoltaic cells, photovoltaic modules, and methods, are disclosed.

Abstract: A CMOS image sensor and fabricating method thereof are disclosed, by which a light condensing effect is enhanced by providing an inner microlens to a semiconductor substrate. The present invention includes a plurality of photodiodes on a semiconductor substrate, a plurality of inner microlenses on a plurality of the photodiodes, an insulating interlayer on a plurality of the inner microlenses, a plurality of metal lines within the insulating interlayer, a device protecting layer on the insulating interlayer, and a plurality of microlenses on the device protecting layer.

Abstract: A semiconductor device which has controlled optical absorption includes a substrate, and a semiconductor layer supported by the substrate. The semiconductor has variable optical absorption at a predetermined optical frequency in relationship to a bandgap of the semiconductor layer. Also included is a strain application structure coupled to the semiconductor layer to create a strain in the semiconductor layer to change the semiconductor bandgap.

Abstract: An object of the present invention is to provide a gallium nitride compound semiconductor multilayer structure useful for producing a gallium nitride compound semiconductor light-emitting device which operates at low voltage while maintaining satisfactory light emission output. The inventive gallium nitride compound semiconductor multilayer structure comprises a substrate, and an n-type layer, a light-emitting layer, and a p-type layer formed on the substrate, the light-emitting layer having a multiple quantum well structure in which a well layer and a barrier layer are alternately stacked repeatedly, said light-emitting layer being sandwiched by the n-type layer and the p-type layer, wherein the well layer comprises a thick portion and a thin portion, and the barrier layer contains a dopant.

Abstract: The present invention provides photovoltaic cells that stably increase photovoltaic conversion efficiency while restraining current leakage. The photovoltaic cells of the present invention include a transparent conductive layer formed on a light-permeable substrate, an organic semiconductor layer A covering the surface of the transparent conductive layer, a photovoltaic conversion layer in contact with the organic semiconductor layer, an organic semiconductor layer B in contact with the photovoltaic conversion layer, and a counter electrode in contact with the organic semiconductor layer B. In the photovoltaic cells, a patterned indented interlayer is formed at the interface between the organic semiconductor layer A and the photovoltaic conversion layer.

Abstract: The present invention relates to a process for producing a substrate coated with rylenetetracarboximides, in which a substrate is treated with an N,N?-bisubstituted rylenetetracarboximide and the treated substrate is heated to a temperature at which the N,N?-bisubstituted rylenetetracarboximide is converted to the corresponding N,N?-unsubstituted compound. The present invention further relates to semiconductor units, organic solar cells, excitonic solar cells and organic light-emitting diodes which comprise a substrate produced by this process. The present invention further relates to a process for preparing N,N?-unsubstituted rylenetetracarboximides, in which the corresponding N,N?-bisubstituted rylenetetracarboximides are provided and heated to a temperature at which these compounds are converted to the corresponding N,N?-unsubstituted compounds.

Abstract: A photoelectric electrode capable of absorbing light energy is provided. The photoelectric electrode at least includes a conductive substrate, one or more semiconductor particle-containing film with a polytetrafluoroethylene (PTFE) skeleton.

Abstract: A method is provided to produce an opto-electronic device comprising a substrate, a first electrode layer, a second electrode layer of opposite polarity to said first electrode layer, any interlayers and, between said first and second electrode layers, a first functional material in interfacial contact with a second functional material, wherein the first functional material has the structure of a laterally porous film and the second functional material is a film disposed over and interpenetrating with the film of the first functional material.

Abstract: Disclosed is a method for manufacturing an organic optoelectronic device. The method comprises providing a substrate, disposing a first electrode on the substrate, disposing a metal pad on the substrate, electrically separated from the first electrode, disposing a first material over the first electrode and at least partially over the metal pad, applying a beam, wherein the beam ablates the first material in an ablation window so that the ablation window includes at least a portion of an edge of the metal pad, and disposing a second electrode over the first material and over the ablation window so that the second electrode is in electrical contact with the at least a portion of an edge of the metal pad.

Abstract: Provided are a dye-sensitized solar cell with increased energy conversion efficiency, and a method of fabricating the same. The dye-sensitized solar cell is provided with a semiconductor electrode layer including hollow-shaped semiconductor particles and a dye layer adsorbed on the surface of the semiconductor electrode layer, and the dye layer is adsorbed on the outer and inner surfaces of the semiconductor particles.

Abstract: A photodetector comprising: at least one electron transporting organic material; and at least one hole transporting material, wherein said at least one electron transporting organic material has an ionization potential of more than 5.5 eV.

Abstract: A polymer comprising a repeating unit represented by the following general formula (I). (In the formula, Ar1 represents a divalent aromatic hydrocarbon or divalent heterocyclic group, X1, Y1, X2 and Y2 each independently represent a fluorine atom or alkylthio group, and X1 and Y1 and X2 and Y2 may together form a carbonyl or thiocarbonyl group with their bonding carbon atom.

Abstract: A signal processing device is provided which is capable of suppressing a voltage change of a power supply when output signals from a plurality of signal sources are read, and capable of outputting a stable signal at a high sensitivity, and an image pickup apparatus using such a signal processing device is also provided. The signal processing device has: a plurality of terminals connectable to a plurality of signal sources; and a read circuit for converting signals input from the terminals into serial signals and outputting the serial signals, wherein: the read circuit comprises a holding capacitor connected to each of the terminals, a transfer switch for transferring a signal held in the holding capacitor to a common signal line, and a shift register for driving the transfer switch; and a semiconductor layer under the common signal line has a conductivity type opposite to a first conductivity type of a semiconductor substrate.

Abstract: A circuit includes an input drain, source and gate nodes. The circuit also includes a group III nitride depletion mode FET having a source, drain and gate, wherein the gate of the depletion mode FET is coupled to a potential that maintains the depletion mode FET in its on-state. In addition, the circuit further includes an enhancement mode FET having a source, drain and gate. The source of the depletion mode FET is serially coupled to the drain of the enhancement mode FET. The drain of the depletion mode FET serves as the input drain node, the source of the enhancement mode FET serves as the input source node and the gate of the enhancement mode FET serves as the input gate node.

Abstract: A photovoltaic device capable of improving an output characteristic is provided. The photovoltaic device includes an n-type single-crystal silicon substrate, a p-type amorphous silicon substrate, and a substantially intrinsic i-type amorphous silicon layer disposed between the n-type single-crystal silicon substrate and the p-type amorphous silicon layer. The i-type amorphous silicon layer includes: a first section which is located on the n-type single-crystal silicon substrate side, and which has an oxygen concentration equal to or below 1020 cm?3; and a second section which is located on the p-type amorphous silicon layer side, and which has an oxygen concentration equal to or above 1020 cm?3.

Abstract: Electrical devices comprised of nanowires are described, along with methods of their manufacture and use. The nanowires can be nanotubes and nanowires. The surface of the nanowires may be selectively functionalized. Nanodetector devices are described.

Abstract: A nano power cell and method of use are described wherein the nano power cell absorbs electromagnetic energy is nano particles in an optical fluid that flow in microchannels of the nano power cell.

Abstract: A silicon solar cell having a silicon substrate includes p-type and n-type emitters on a surface of the substrate, the emitters being doped nano-particles of silicon. To reduce high interface recombination at the substrate surface, the nano-particle emitters are preferably formed over a thin interfacial tunnel oxide layer on the surface of the substrate.

Abstract: A semiconductor material structure includes at least one region capable of generating electrons and holes each having an associated mean kinetic energy during operation. A material layer in proximity to the region provides an associated potential energy larger than the mean kinetic energy associated with the generated electrons and the mean kinetic energy associated with the holes.

Abstract: This invention relates to a process for making a semiconductor device comprising the following steps: a doped region with a first type of conductivity is made on a first principal face of a semiconductor substrate and at least one window is made, a first metallisation area is deposited on the doped region, a dielectric layer is deposited on at least the window and the first metallisation area, at least a first opening is etched in the dielectric layer at the window to accommodate a doped region with a second type of conductivity while arranging an undoped portion of the semiconductor substrate laterally between the doped regions, the substrate is doped to create the doped region with the second type of conductivity, a second metallisation area is deposited. Application particularly for solar cells in thin layer.

Abstract: An array substrate includes a switching element, a signal transmission line, a passivation layer and a pixel electrode. The switching element is disposed on an insulating substrate. The signal transmission line is connected to the switching element and includes a barrier layer, a conductive line, and a copper nitride layer. The barrier layer is disposed on the insulating substrate. The conductive line is disposed on the barrier layer and includes copper or copper alloy. The copper nitride layer covers the conductive line. The passivation layer covers the switching element and the signal transmission line and has a contact hole through which a drain electrode of the switching element is partially exposed. The pixel electrode is disposed on the insulating substrate, and is connected to the drain electrode of the switching element through the contact hole.

Abstract: A semiconductor substrate includes a first semiconductor layer and a second semiconductor layer. The first semiconductor layer is formed of II-VI-group semiconductor material, III-V-group semiconductor material, or II-VI-group semiconductor material and III-V-group semiconductor material. At least one amorphous region and at least one crystalloid region are formed in the first semiconductor layer. The second semiconductor layer is formed on the first semiconductor layer and is crystal-grown from the at least one crystalloid region. A method of manufacturing a semiconductor substrate includes preparing a growth substrate; crystal-growing the first semiconductor layer on the growth substrate; forming the at least one amorphous region and the at least one crystalloid region in the first semiconductor layer; and forming a second semiconductor layer on the first semiconductor layer using the at least one amorphous region as a mask and the at least one crystalloid region as a seed.

Abstract: Tandem photovoltaic cells, as well as related components, systems, and methods, are disclosed.

Abstract: The present invention relates to a semiconductor chip manufacturing method in which a semiconductor thin film can be cut in a relatively short time and the cut surface can be relatively smoothly formed. When an Si substrate having a diamond thin film formed on the surface thereof is cut in the chip form, a modified region based on multiphoton absorption is formed as a cutting starting point region formed along a cutting planned line by irradiating at least the Si substrate with a laser beam whose condense point is focused to the inside of the Si substrate, along the cutting planned line. The diamond thin film is cut in connection with the cutting of the Si substrate along the cutting starting point region defined by the modified region.

Abstract: Electrical devices comprised of nanowires are described, along with methods of their manufacture and use. The nanowires can be nanotubes and nanowires. The surface of the nanowires may be selectively functionalized. Nanodetector devices are described.

Abstract: A production method for an image sensor which is provided with a plurality of sensor portions arranged on a semiconductor substrate and each having a first photodiode constituted by a first region of a first conductivity type and a second region of a second conductivity type different from the first conductivity type and a second photodiode constituted by the second region and a third region of the first conductivity type. The method includes the steps of: forming a second region of the second conductivity type on a first region defined in a semiconductor substrate by epitaxial growth; and forming a third region of the first conductivity type on the second region by epitaxial growth.

Abstract: Organic photosensitive optoelectronic devices (“OPODs”) are disclosed which include an exciton blocking layer to enhance device efficiency. Single heterostructure, stacked and wave-guide type embodiments are disclosed. Photodetector OPODs having multilayer structures and an exciton blocking layer are also disclosed. Guidelines for selection of exciton blocking layers are provided.