Abstract: A light source that utilizes light emitting diodes that emit white light is disclosed. The diodes are mounted on an elongate member having at least two surfaces upon which the light emitting diodes are mounted. The elongate member is thermally conductive and is utilized to cool the light emitting diodes. In the illustrative embodiment, the elongate member is a tubular member through which a heat transfer medium flows.

Abstract: A semiconductor light emitting device includes a mold resin having a cup shape portion on an upper surface of the mold resin. One or more holes penetrate through the cup shape portion to outside of the mold resin and/or one or more trenches extend from the cup-shaped portion to outside the mold resin. A first lead is provided in the mold resin and extending from the cup shape portion to outside of the mold resin in a first direction, and a second lead provided in the mold resin and extending from the cup shape portion to outside of the mold resin in a second direction which is opposite to the first direction. A light emitting element is mounted on the first lead in the cup shape portion, and a wire electrically connects the light emitting element and the second lead. A sealing resin is embedded in the one or more holes and the one or more trenches and is configured to seal the light emitting element and the wire.

Abstract: A semiconductor device package comprises a container including a base and sidewalls. The base is configured to support a semiconductor device chip, and a lead frame extends through at least one of the sidewalls. A portion of the lead frame within the sidewall has at least one aperture penetrating into the lead frame. The sidewall material extends into the aperture, thereby forming a strong interfacial bond that provides a low leakage, sidewall-lead-frame interface. The base has a reentrant feature that is positioned within the thickness of at least one of the sidewalls and engages the at least one sidewall, thereby forming a low leakage base-sidewalls interface. The top surface of the base has a groove that is positioned within the thickness of at least one of the sidewalls and engages the at least one sidewall, thereby enhancing the low leakage base-sidewall interface.

Abstract: In a lead frame, through holes are formed outside suspending leads and trenches are formed on a back surface along the suspending leads so as to communicate with the through holes. When sealing resin is injected into cavities of a resin molding die, air enters the through holes through air vents and flows out from the through holes by a resin injection pressure in the trenches, making it easier for the sealing resin to enter the through holes. Since the sealing resin leaking to the air vents can be injected into the through holes, it is possible to enhance the bonding force between the sealing resin after curing and the lead frame in the vicinity of the air vents and effect release of the resin molding die, while allowing the sealing resin leaking to the air vents to remain on the lead frame side without remaining within the air vents.

Abstract: The invention relates to a high power LED package, in which a package body is integrally formed with resin to have a recess for receiving an LED chip. A first sheet metal member is electrically connected with the LED chip, supports the LED chip at its upper partial portion in the recess, is surrounded by the package body extending to the side face of the package body, and has a heat transfer section for transferring heat generated from the LED chip to the metal plate of the board and extending downward from the inside of the package body so that a lower end thereof is exposed at a bottom face of the package body thus to contact the board. A second sheet metal member is electrically connected with the LED chip spaced apart from the first sheet metal member for a predetermined gap, and extends through the inside of the package body to the side face of the package body in a direction opposite to the first sheet metal member. A transparent sealant is sealingly filled up into the recess.

Abstract: A supporting frame is used to solidly bridge to the two metallic contacts of a surface mount diode chip. Any bending or twisting stress between the two contacts is borne by the supporting frame instead of the diode chip. Otherwise the stress may damage the diode chip. wherein said supporting forms a cantilever over said first metallic contact and the overhanging end of the cantilever is glued to said second metallic contact.

Abstract: A mounting substrate for a semiconductor light emitting device includes a solid metal block having a cavity in a face thereof that is configured for mounting a semiconductor light emitting device therein. An insulating coating is provided in the cavity, and first and second spaced apart conductive traces are provided on the insulating coating in the cavity that are configured for connection to a semiconductor light emitting device. The mounting substrate may be fabricated by providing a solid aluminum block including a cavity in a face thereof that is configured for mounting a semiconductor light emitting device therein. The solid aluminum block is oxidized to form an aluminum oxide coating thereon. The first and second spaced apart electrical traces are fabricated on the aluminum oxide coating in the cavity.

Abstract: The present invention relates to a flip chip light emitting diode, in which the flow of current concentrated on a portion adjacent to an n-type electrode can be induced into the center of a light emitting section and a current-spreading effect is accordingly enhanced, thereby increasing light emission efficiency of a light emitting diode chip, and a method of manufacturing the same.

Abstract: A sideway-emission light emitting diode includes a light emitting diode package comprised of a light emitting diode dice that gives off light and a lens that is positioned in front of a front end face of the package for receiving the light and redirecting the received light toward a circumference of the package and a light guide comprised of a board defining a cavity to receive and retain the light emitting diode package therein. The board has opposite sides each forming a cut-off delimited by opposite inclined edges, a refraction section extending from each inclined edge, and a projection section formed between opposite refraction sections, whereby light transmitting into the light guide is directed, by means of the reflection/refraction by the inclined edges, the refraction sections and the projection sections, toward and projected from the projection sections in sideway directions.

Abstract: A light-emitting diode (LED) structure with electrostatic discharge (ESD) protection is described. The LED includes a substrate, a patterned semiconductor layer, a first electrode and a second electrode. The patterned semiconductor layer is disposed over the substrate, and is divided into at least a first island structure and a second island structure. The first electrode and the second electrode are connected between the first island structure and the second island structure. A shunt diode is formed by the first electrode, the second electrode and the second island structure. The shunt diode is connected in parallel to the LED with an inverse voltage compared to the LED. In the LED structure of the invention, the first island structure and the second island structure are manufactured simultaneously by the epitaxy procedure. Therefore, the LED could be protected from damage due to electrostatic discharge (ESD).

Abstract: A p-type contact (30) is disclosed for flip chip bonding and electrically contacting a p-type group III-nitride layer (28) of a group III-nitride flip chip light emitting diode die (10) with a bonding pad (60). A first palladium layer (42) is disposed on the p-type group III-nitride layer (28). The first palladium layer (42) is diffused through a native oxide of the p-type group III-nitride layer (28) to make electrical contact with the p-type group III-nitride layer (28). A reflective silver layer (44) is disposed on the first palladium layer (42). A second palladium layer (46) is disposed on the silver layer (44). A bonding stack (48) including at least two layers (50, 52, 54) is disposed on the second palladium layer (46). The bonding stack (48) is adapted for flip chip bonding the p-type layer (28) to the bonding pad (60).

Abstract: A submount for a light emitting device package is provided. The submount includes a substrate; a first bonding layer and a second bonding layer which are separately formed on the substrate; a first barrier layer and a second barrier layer which are formed on the first bonding layer and on the second bonding layer, respectively; a first solder and a second solder which are formed on the first barrier layer and on the second barrier layer, respectively; and a first blocking layer and a second blocking layer which are formed around the first barrier layer and the second barrier layer, blocking the melted first solder and the melted second solder from overflowing during a flip chip process.

Abstract: A heat dissipating structure is flip-chip bonded to a light-emitting element and facilitates heat dissipation. The heat dissipating structure includes: a submount facing the light-emitting element and having at least one groove; a conductive material layer filled into at least a portion of the at least one groove; and a solder layer interposed between the light-emitting element and the submount for bonding. The heat dissipating structure and the light-emitting device having the same allow efficient dissipation of heat generated in the light-emitting element during operation.

Abstract: In a method for fabricating a flip-chip light emitting diode device, a submount wafer is populated with a plurality of the light emitting diode dies. Each device die is flip-chip bonded to the submount. Subsequent to the flip-chip bonding, a growth substrate is removed. The entire submount is immersed in the etchant solution, exposed to the light for a prespecified period of time, removed from the solution, dried and diced into a plurality of LEDs. The LEDs are immediately packaged without any further processing.

Abstract: The present invention relates to a flip chip type nitride semiconductor light emitting device having p-type and n-type nitride semiconductor layers, and an active layer in between. The invention also has an ohmic contact layer formed on the p-type nitride semiconductor layer, a light-transmitting conductive oxide layer formed on the ohmic contact layer, and a highly reflective metal layer formed on the light-transmitting conductive oxide layer.

Abstract: A method of manufacturing an opto-coupler includes disposing an insulating layer on a first die and disposing an isolation layer on the insulating layer. The method further includes disposing a securing layer on the isolation layer and disposing a second die on the securing layer.

Abstract: An LED display assembly, comprising a grid of electrical conductors; light emitting diodes in association with the grid and in electrical communication with the conductors that provide power for LED operation, the grid operable to receive heat from the diodes during diode operation, and the array configured for passing coolant fluid for transfer of heat to the fluid. LED packages adjustable relative to a mounting grid, are also provided.

Abstract: A surface-mountable light emitting diode structural element in which an optoelectronic chip is attached to a chip carrier part of a lead frame, is described. The lead frame has a connection part disposed at a distance from the chip carrier part, and which is electrically conductively connected with an electrical contact of the optoelectronic chip. The chip carrier part presents a number of external connections for improved conduction of heat away from the chip. The external connections project from a casing and at a distance from each other.

Abstract: A light source assembly includes a vapor chamber, which has an electrical circuit installed in the top surface, an insulation layer covered in between the top surface of the vapor chamber and the electrical circuit, and light emitting diodes installed in the top surface directly of the vapor chamber and electrically connected to the electrical circuit for producing light upon connection of electricity to the electrode circuit means and the vapor chamber, and a heat sink installed in the bottom surface of the vapor chamber for dissipation of heat energy from the vapor chamber into outside open air.

Abstract: A SMD-type LED with high heat dissipation efficiency and high power includes a base with a post arranged and integrated on the center thereof and a slot on top of the post. At least one contact hole is arranged on bottom of the base for connecting with an external heat sink so as to achieve better heat dissipation. The slot is used for accommodating a LED chip that is electrically connected with a circuitry extension device through two electrical contacts. The LED chip is electrically connected with the circuitry extension device directly while it also connects with the base for heat dissipation, thus the structure for electricity conduction is separated from the structure for heat dissipation.

Abstract: A semiconductor device includes a substrate, and a semiconductor thin film bonded to the substrate, wherein the semiconductor thin film includes a plurality of discrete operating regions and an element isolating region which isolates the plurality of discrete operating regions, and the element isolating region is etched to a shallower depth than a thickness of the semiconductor thin film, and is a thinner region than the plurality of discrete operating regions.