Abstract: A light emitting diode (LED) package includes a circuit board and an LED chip. The circuit board has a top circuit layer and an insulating layer. The top circuit layer is disposed on the insulating layer, and the material of the insulating layer is selected from a group consisting of diamond, diamond like coating (DLC), AlN, BN, CrN and TiN. The LED chip is disposed on the circuit board and electrically connected with the top circuit layer of the circuit board. Since the material of the insulting layer is selected from materials with a high thermal conductivity, the heat dissipation performance and light-emitting efficiency of the LED package can be enhanced.

Abstract: A method of producing a lamp, including: mounting light emitting junctions in respective receptacles; mounting the receptacles on a curved support structure so as to form a three-dimensional array; and placing the light emitting junctions in electrical connection with the support structure.

Abstract: A semiconductor light emitting device having a semiconductor stacking structure bonded onto the support member and having excellent characteristics is provided by a preferable electrode structure. The semiconductor light emitting device comprising; a semiconductor stacking structure having a first semiconductor layer and a second semiconductor layer of conductivity types different from each other, a first electrode connected to the first semiconductor layer, and a second electrode connected to the second semiconductor layer, wherein one principal surface of the first electrode has a portion that makes contact with the first semiconductor layer so as to establish electrical continuity and an external connection section.

Abstract: A surface mount light emitting device includes a substrate, a chip set, a wire set and an encapsulator. The substrate includes a base plate with four corners and four electrode layers arranged on the corners, each electrode layer has a top electrode extended to the top surface of the base plate, a bottom electrode extended to the bottom surface of the base plate and a trace extended toward the center of the top surface of the base plate. The chip set includes two resistor chips and two light emitting chips, the resistor chips arranged on two of the traces extended from two diagonal corners, the light emitting chips respectively arranged on the other two traces extended from the other two diagonal corners. The wire set includes two fuse wires electrically connected the resistor chips to the light emitting chips. The encapsulator is encapsulating the chip set and the wire set.

Abstract: An LED array chip (2), which is one type of a semiconductor light emitting device, includes an array of LEDs (6), a base substrate (4) supporting the array of the LEDs (6), and a phosphor film (48). The array of LEDs (6) is formed by dividing a multilayer epitaxial structure including a light emitting layer into a plurality of portions. The phosphor film (48) covers an upper surface of the array of the LEDs (6) and a part of every side surface of the array of LEDs (6). Here, the part extends from the upper surface to the light emitting layer.

Abstract: A radiation-emitting component (1) comprising a radiation source, a housing body (6), a radiation exit side (16), an underside (17) which is opposite the radiation exit side (16), a side surface (18) which connects the radiation exit side (16) and the underside (17), and at least one first contact region (2a, 3a). The first contact region (2a, 3a) extends along the side surface (18) and is in the form of a partial region of a carrier (23) that runs outside the housing body (6).

Abstract: An LED assembly includes a substrate and a plurality of LEDs mounted on the substrate. Each LED comprises an LED die mounted on the substrate via an adhesive, a base spacedly surrounding the LED die, a pair of leads inserted in the base to be in electrical connection with the LED die, and an encapsulant sealing the LED die and inner parts of the leads therein. A thickness of the adhesive is selected to be less than 0.01 inches. The substrate contains a kind of coolant therein to rapidly remove heat from the LED die to atmosphere.

Abstract: The present embodiments provide surface mount devices and/or systems. In some embodiments, the surface mount devices comprise a casing with a recess in a second surface; a first lead element partially encased by the casing comprising a coupling portion extending interior to the casing generally in a first direction and a chipset portion extending from the first coupling portion at a first acute angle and through an area exposed by the recess; a second lead element partially encased by the casing comprising a second coupling portion extending interior to the casing in a second direction substantially parallel to the first direction and a head portion extending from the second coupling portion at a second acute angle and partially terminating interior to the area exposed by the recess; and the chipset portion comprises a first indentation and a second indentation both extending into the area exposed through the recess.

Abstract: A packaging structure suitable for an integrated circuit device receiving short-wavelength laser light is provided. A lead-mounted substrate is placed on the side of the light receiving surface of the integrated circuit device having a photo detecting part. The lead is electrically connected with the integrated circuit device via an electrode. The integrated circuit device and the substrate are encapsulated with an encapsulation section. The substrate has an opening at a position above the photo detecting part.

Abstract: A wafer-level electro-optical semiconductor fabrication mechanism and method for the same which improves upon traditional electro-optical semiconductor grain packaging methods. The present invention electrically connects semiconductor grains to the grains on a top surface of a wafer, this is done by either screen-printing or steel board-printing solder or silver paste onto the wafer. After that, the wafer is processed using the following steps: processing the devices, bonding with wire, packaging the wafer and finally cutting the wafer. Using this method raises the production yield while production times and costs are reduced. The wafer-level electro-optical semiconductor fabrication mechanism comprises: a wafer, an electro-optical semiconductor grain and conductive materials.

Abstract: A flip chip type LED lighting device manufacturing method includes the step of providing a strip, the step of providing a submount, the step of forming a metal bonding layer on the strip or submount, the step of bonding the submount to the strip, and the step of cutting the structure thus obtained into individual flip chip type LED lighting devices.

Abstract: A light-emitting diode arrangement comprising a plurality of semiconductor chips which are provided for emitting electromagnetic radiation from their front side (101) and which are fixed by their rear side (102)—opposite the front side—on a first main face (201) of a common carrier body (2), wherein the semiconductor chips consist of a respective substrateless semiconductor layer stack (1) and are fixed to the common carrier body without an auxiliary carrier, and to a method for producing such a light-emitting diode arrangement.

Abstract: A semiconductor light emitting device package according to an embodiment comprising: a package body comprising a groove section; an electrode in the groove section; at least one semiconductor light emitting device electrically connected to the electrode in the groove section of the package body; an interconnection pattern on an outer peripheral surface of the package body and electrically connected to the electrode, wherein a part of the interconnection pattern is on a bottom surface of the package body; and a metal pattern is on the bottom surface of the package body corresponding to an area in which the semiconductor light emitting device is located.

Abstract: For semiconductor chips (1) using thin film technology, an active layer sequence (20) is applied to a growth substrate (3), on which a reflective electrically conductive contact material layer (40) is then formed. The active layer sequence is patterned to form active layer stacks (2), and reflective electrically conductive contact material layer (40) is patterned to be located on each active layer stack (2). Then, a flexible, electrically conductive foil (6) is applied to the contact material layers as an auxiliary carrier layer, and the growth substrate is removed.

Abstract: A flip chip type LED lighting device manufacturing method includes the step of providing a strip, the step of providing a submount, the step of forming a metal bonding layer on the strip or submount, the step of bonding the submount to the strip, and the step of cutting the structure thus obtained into individual flip chip type LED lighting devices.

Abstract: In a light emitting device, a light emitting chip (12, 112) includes a stack of semiconductor layers (14) and an electrode (24, 141, 142) disposed on the stack of semiconductor layers. A support (10, 10?, 110, 210) has a generally planar surface (30) supporting the light emitting chip in a flip-chip fashion. An electrically conductive chip attachment material (40, 41, 141, 142) is recessed into the generally planar surface of the support such that the attachment material does not protrude substantially above the generally planar surface of the support. The attachment material provides electrical communication between the electrode of the light emitting chip and an electrically conductive path (36, 36?) of the support. Optionally, at least the stack of semiconductor layers and the electrode of the light emitting chip are also recessed into the generally planar surface of the support.

Abstract: An LED package structure includes a first LED chip, a second LED chip arranged on the minor light-emitting surface of the first LED chip, a conductive unit connected between the electrode areas for parallel or serially connecting the two LED chips together, and two external electric conduction units for electrically connecting both the first and second electrode areas of the first LED chip with an external circuit.

Abstract: A surface mountable device having a circuit device and a base section. The circuit device includes top and bottom layers having a top contact and a bottom contact, respectively. The base section includes a substrate having a top base surface and a bottom base surface. The top base surface includes a top electrode bonded to the bottom contact, and the bottom base surface includes first and second bottom electrodes that are electrically isolated from one another. The top electrode is connected to the first bottom electrode, and the second bottom electrode is connected to the top contact by a vertical conductor. An insulating layer is bonded to a surface of the circuit device and covers a portion of a vertical surface of the bottom layer. The vertical conductor includes a layer of metal bonded to the insulating layer.

Abstract: In a light-emitting device, a mount member mounting a semiconductor light-emitting element is mounted on a circuit board. A multilayer board is used for the mount member. A first conductive pattern formed on the surface layer of the multilayer board and a semiconductor light-emitting element are electrically connected. On the multilayer board, a second conductive pattern formed on an intermediate layer positioned closer to the circuit board than the first conductive pattern is electrically connected to the conductor part of the circuit board with a conductive wire such as a gold wire. Power is fed from the conductor part to the semiconductor light-emitting element via the conductive wire and the conductive patterns.

Abstract: A substrate-free LED device is provided. The LED device comprises a substrate, an epitaxial layer disposed on the substrate, a first electrode disposed on a portion of the epitaxial layer, a second electrode disposed on another portion of the epitaxial layer, and a protection layer, disposed over the epitaxial layer. It is noted that in the LED device, the substrate comprises, for example but not limited to, high heat-sink substrate, and the protection layer comprises, for example but not limited to, high heat-sink, high transparent material.

Abstract: An LED diode package includes a heat connecting part for mounting a light emitting part on an upper surface thereof, frames electrically connected to the light emitting part while holding the heat connecting part and a molded part fixing the heat connecting part and the frames together. The light emitting part generates light in response to current applied thereto, and the upper surface of the heat connecting part is protruded beyond an upper surface of the molded part to a predetermined height. This can optimize the unique beam angle of the light source thereby to maximize lighting efficiency as well as prevent overflow of the encapsulating material in the assembling process of the lens, which may otherwise soil adjacent components.

Abstract: A bendable LED planar light source structure, a flexible substrate therefore, and a manufacturing method thereof are provided. The flexible substrate has metal layers on both sides, where the metal layer on one side has a circuit layout, and the metal layer on the other side has a pattern structure or a whole metal coating with reflecting and scattering characteristics. Meanwhile, bonding pads are provided on the same side or opposite side as the metal layer with the circuit layout, and an array of LED dies is bonded with the bonding pads through wire bonding or flip chip bonding, such that the LED dies are conducted with current through the circuit layout on the flexible substrate, so as to form a planar light source.

Abstract: An optical device package comprises: a metal frame including a substrate and a rectangular die pad portion integrally connected to the substrate, wherein the substrate is a metal plate, and the die pad portion is bent from the substrate such that the die pad portion extends from the substrate at an angle of 90 degrees; signal lead pins extend in the opposite direction from the die pad portion relative to the substrate such that the first lead pins intersect the principal surfaces of the substrate at a right angle and are spaced apart from the metal frame; and a molded resin member including a plate-like resin base extending across and in close contact with one of the principal surfaces of the substrate, wherein the signal lead pins protrude from a surface of the resin base; surfaces of the signal lead pins are covered with the molded resin member; and the metal frame and the signal lead pins are secured in place by the molded resin member.

Abstract: In one embodiment, a surface-mount device comprises a casing having opposed, first and second main surfaces, side surfaces, and end surfaces. A lead frame partially encased by the casing comprises (1) an electrically conductive LED chip carrier part having a surface carrying a linear array of LEDs adapted to be energized to produce in combination a substantially full range of colors, each LED having a first electrical terminal and a second electrical terminal, the first terminal of each of the LEDs being electrically and thermally coupled to the chip carrying surface of the chip carrier part; and (2) electrically conductive connection parts separate from the chip carrier part, each of the connection parts having a connection pad, the second terminal of each of the LEDs being electrically coupled to the connection pad of a corresponding one of the connection parts with a single wire bond. The linear array of LEDs extends in a first direction, and each of the chip carrier part and connection parts has a lead.

Abstract: The present invention is to provide a semiconductor device which includes a mounting base and a light-emitting device. The mounting base includes a substrate of a first semiconductor material and a first layer of a material with high thermal conductivity formed over the substrate. Furthermore, the light-emitting device is a multi-layer structure which includes at least a second layer of a second semiconductor material. The light-emitting device is mounted on the first layer of the mounting base. Moreover, the difference of the thermal expansion coefficient between the first semiconductor material and the second semiconductor material is between a predetermined range.

Abstract: The present invention provides LTCC (low temperature co-fired ceramic) tape compositions and demonstrates the use of said LTCC tape(s) in the formation of Light-Emitting Diode (LED) chip carriers and modules for various lighting applications. The present invention also provides for the use of (LTCC) tape and LED modules in the formation of lighting devices including, but not limited to, LED devices, High Brightness (HB) LED backlights, display-related light sources, automotive lighting, decorative lighting, signage and advertisement lighting, and information display lighting.

Abstract: A light-emitting diode (LED) package structure including an encapsulant, a carrier, and an LED chip is provided. The encapsulant has a cavity located in a front end of the encapsulant. The carrier includes a die pad, a heat spreader, and a plurality of leads. The die pad is disposed on the encapsulant and located in the cavity. The heat spreader is connected with the die pad, and passes through the encapsulant to extend outside the cavity, and further extends toward a rear end of the encapsulant. The leads pass through the encapsulant and extend outside the cavity. The LED chip is disposed on the die pad, and is electrically connected to the leads. Heat generated when the LED chip emits light is conducted to the heat spreader via the die pad, so as to conduct the heat outside the encapsulant, and to further reduce the temperature of the LED chip.

Abstract: A semiconductor light-emitting device can include a nitride semiconductor light-emitting layer and can supply a current to an entire light-emitting region quickly and efficiently to output high-intensity light. The semiconductor light-emitting device can include: a transparent substrate; a first conductivity type nitride semiconductor layer; a nitride semiconductor light-emitting layer; a second conductivity type nitride semiconductor layer; a notch region that cuts the second conductivity type nitride semiconductor layer and the nitride semiconductor light-emitting layer and exposes the first conductivity type nitride semiconductor layer, to define mesa active regions and a mesa electrode drawing region; an electrode for the first conductivity type; an ohmic electrode for the second conductivity type; and a supporting substrate including connecting members for the first and second conductivity types.

Abstract: A high power Light Emitting Diode (LED) package and a method of producing the same. The high power LED package according to the present invention includes a plurality of light emitting diode chips, a first lead frame with the light emitting diode chips mounted thereon, and a second lead frame disposed at a predetermined interval from the first lead frame. The LED package also includes a package body fixing the first and second lead frames and bonding wires for electrically connecting the plurality of LED chips. The package body includes at least one first reflecting part separately surrounding each of the plurality of LED chips with upward-inclined inner side walls thereof and a second reflecting part surrounding the entire plurality of LED chips with an upward-inclined inner side wall thereof.

Abstract: A reinforced chip package structure includes a light emitting element, a base, and a package member. The base has a base deck and a jutting bearing deck on the base deck to hold the light emitting element. The base deck and the bearing deck are interposed by an elevation difference section. On the elevation difference section, there is an annular retaining structure. The package member is located on the base and covers at least the bearing deck and the retaining structure. The package member has an anchor structure corresponding to the retaining structure. The retaining structure and the anchor structure are coupled together to harness the base and the package member from moving against each other. Thus the base and package member form a reinforced bonding between them without separating from each other when subject to external forces, therefore provide improved protection for the light emitting element.

Abstract: A method of fabricating semiconductor devices, such as GaN LEDs, on insulating substrates, such as sapphire. Semiconductor layers are produced on the insulating substrate using normal semiconductor processing techniques. Trenches that define the boundaries of the individual devices are then formed through the semiconductor layers and into the insulating substrate, beneficially by using inductive coupled plasma reactive ion etching. The trenches are then filled with an easily removed layer. A metal support structure is then formed on the semiconductor layers (such as by plating or by deposition) and the insulating substrate is removed. Electrical contacts, a passivation layer, and metallic pads are then added to the individual devices, and the individual devices are then diced out.

Abstract: A modular light emitting diode (LED) mounting configuration is provided including a light source module having a plurality of pre-packaged LEDs arranged in a serial array. The module is connected to a heat dissipating plate configured to mount to an electrical junction box. Thus, heat from the LEDs is conducted to the heat dissipating plate and to the junction box. A sensor is configured to detect environmental parameters and a driver is configured to illuminate the LEDs in response to the environmental parameters, thereby selectively configuring the LEDs to function in a wide variety of useful applications.

Abstract: A packaging structure and method for a light emitting diode is provided. The present invention uses flip-chip and eutectic bonding technology to attach a LED to a thermal and electrical conducting substrate. The flip-chip packaging structure comprises a thermal and electrical conducting substrate having an insulating layer formed in an appropriate area on the top surface of the substrate and a bonding pad formed on top of the insulating layer; and a LED reversed in a flip-chip style and joined to the substrate by eutectic bonding. A first electrode of the LED is eutectically bonded to an appropriate area on the top surface of the substrate via a eutectic layer, while a second electrode of the LED is electrically connected to the bonding pad.

Abstract: In various aspects, a semiconductor light emitting device may include a mold resin having a cup shape portion on an upper surface of the mold resin; a first lead provided in the mold resin and extending from the cup shape portion to outside of the mold resin, the first lead having a first lead section and a second lead section, the second lead section of the first lead being thicker than the first lead section of the first lead, the second lead section of the first lead having a hole; a second lead provided in the mold resin and extending from the cup shape portion to outside of the mold resin, having a first lead section and a second lead section, the second lead section of the second lead being thicker than the first lead section of the second lead; a light emitting element mounted on the second section of the first lead in the cup shape portion; a wire electrically connecting the light emitting element and the second lead; and a sealing resin configured to seal the light emitting element and the wire.

Abstract: A flip-chip type semiconductor light-emitting device having a positive electrode and a negative electrode similar in electrode area and capable of preventing the misalignment of the light-emitting device by utilizing the self alignment effect in manufacturing a light-emitting diode lamp and a printed circuit board for the flip-chip type semiconductor light-emitting device are provided. Furthermore, adopted are a flip-chip type semiconductor light-emitting device 1 which is provided with a negative electrode pad and a positive electrode pad formed on the side opposite the transparent substrate side of the semiconductor layer, wherein each of the electrode pads is formed in the same shape as each other and a printed circuit board for the light-emitting device has a pair of the electrode patterns which are formed in the same shape as each other. Still furthermore, a soldering film is included in each of the electrode pads.

Abstract: A semiconductor device package comprises a container including a base and sidewalls. The base is configured to support a semiconductor device chip, and a lead frame extends through at least one of the sidewalls. A portion of the lead frame within the sidewall has at least one aperture penetrating into the lead frame. The sidewall material extends into the aperture, thereby forming a strong interfacial bond that provides a low leakage, sidewall-lead-frame interface. The base has a reentrant feature that is positioned within the thickness of at least one of the sidewalls and engages the at least one sidewall, thereby forming a low leakage base-sidewall interface. The top surface of the base has a groove that is positioned within the thickness of at least one of the sidewalls and engages the at least one sidewall, thereby enhancing the low leakage base-sidewall interface.

Abstract: A method for forming a transparent electrode on a visible light-emitting diode is described. A visible light-emitting diode element is provided, and the visible light-emitting diode element has a substrate, an epitaxial structure and a metal electrode. The metal electrode and the epitaxial structure are located on the same side of the substrate, or located respectively on the different sides of the substrate. An ohmic metal layer is formed on a surface of the epitaxial structure. The ohmic metal layer is annealed. The ohmic metal layer is removed to expose the surface of the epitaxial structure. A transparent electrode layer is formed on the exposed surface. A metal pad is formed on the transparent electrode layer.

Abstract: Individual side-emitting LEDs are separately positioned in a waveguide, or mounted together on a flexible mount then positioned together in a waveguide. As a result, the gap between each LED and the waveguide can be small, which may improve coupling of light from the LED into the waveguide. Since the LEDs are separately connected to the waveguide, or mounted on a flexible mount, stress to individual LEDs resulting from changes in the shape of the waveguide is reduced.

Abstract: In a circuit device having a circuit element housed in a case, a rise of air pressure and occurrence of condensation in the case are prevented. A circuit device of the present invention includes a case formed of a bottom part and a side part, and a cover part covering an upper surface of the side part. In an internal space of the case, a circuit element such as a semiconductor element is housed. In a bottom part of the case, a land and leads are buried. A communicating part which causes the internal space of the case to communicate with an outside of the case is provided in the land. By providing the communicating part, the rise of air pressure and occurrence of condensation in the internal space due to change in temperature are suppressed. Furthermore, in the land made of metal, the communicating part can be easily formed by etching or the like.

Abstract: A luminous structure based on light-emitting diodes, which includes: a first dielectric element with a substantially plane main face associated with a first electrode; a second dielectric element with a substantially plane main face associated with a second electrode that faces the first electrode and lies in a different plane; at least a first light-emitting diode including a semiconductor chip including, on first and second opposed faces, first and second electrical contacts, the first electrical contact being electrically connected to the first electrode, the second electrical contact being electrically connected to the second electrode, and at least the first element at least partly transmitting radiation within the ultraviolet or in the visible.

Abstract: A light emitting diode (LED) package structure is disclosed. The LED package structure comprises a lead frame which has a chip carrier part, a pair of extended parts, a first electrode and a second electrode. The chip carrier part has an arc frame, a bulge, a first surface and a second surface. The extended part has a first side, a second side, a first top and a first bottom. The first side connects the arc frame of the chip carrier part. The arc frame electrically connects the first electrode. A heat dissipating material is placed on the second surface.

Abstract: Light emitting diode (LED) assemblies packaged for high temperature operation and surface mounting. In particular, the LED assemblies according to the present invention are constructed to include a thermally conducting base and an optically efficient cavity that provides protection for the LED assembly and maximizes light extraction. The LED assemblies are particularly adapted for easy and efficient surface mounting or bolt down assembly mounting in high temperature environments.

Abstract: Image sensing devices and methods for fabricating the same are provided. An exemplary image sensing device includes a first substrate having a first side and a second side opposing each other. A plurality of image sensing elements is formed in the first substrate at the first side. A conductive via is formed through the first substrate, having a first surface exposed by the first substrate at the first side and a second surface exposed by the first substrate at the second side. A conductive pad overlies the conductive via at the first side and is electrically connecting the image sensing elements. A conductive layer overlies the conductive via at the second side and electrically connects with the conductive pad. A conductive bump is formed over a portion of the conductive layer. A second substrate is bonded with the first substrate at the first side.

Abstract: A light emitting device includes: a chip-mounting base; a light emitting chip mounted on the chip-mounting base; and a transparent encapsulant enclosing the light emitting chip and bonded to the chip-mounting base through a bonding material. The bonding material is an inorganic compound selected from one of a nitride compound and an oxide compound.

Abstract: The present application discloses a light source comprising an LED die having an emitting surface and an optical element including a base, an apex smaller than the base, and a converging side extending between the base and the apex, wherein the base is optically coupled to and is no greater in size than the emitting surface, and wherein the optical element directs light emitted by the LED die to produce a side emitting pattern.

Abstract: A high-brightness LED module includes a substrate with a recess in which a light emitting element is mounted. The recess is defined by a sidewalls and a relatively thin membrane. At least two micro-vias are provided in the membrane and include conductive material that passes through the membrane. A p-contact of the light emitting element is coupled to a first micro-via and an n-contact of the light emitting element is coupled to a second micro-via.

Abstract: A light emitting diode package for preventing an electric short circuit among semiconductor layers and with excellent bonding strength. The light emitting diode package includes a package substrate, a light emitting diode chip bonded to an upper surface of the package substrate, and a bonding material for bonding the light emitting diode chip to the package substrate. The package substrate has a recess formed in a bonding surface thereof to accommodate the bonding material.

Abstract: A substrate for mounting optical semiconductor elements is provided, including a base substrate having an insulating layer and a plurality of wiring circuits formed on the upper face of the insulating layer, and having at least one external connection terminal formation opening portion which penetrates the insulating layer and reaches the wiring circuits; and an optical reflection member, which is provided on the upper face of the base substrate, and which forms at least one depressed portion serving as an area for mounting an optical semiconductor element.

Abstract: A submount for a semiconductor light emitting device includes a semiconductor substrate having a cavity therein configured to receive the light emitting device. A first bond pad is positioned in the cavity to couple to a first node of a light emitting device received in the cavity. A second bond pad is positioned in the cavity to couple to a second node of a light emitting device positioned therein. Light emitting devices including a solid wavelength conversion member and methods for forming the same are also provided.

Abstract: The present invention discloses a structure of a single-sided PCB within an ExpressCard with SMD LEDs arrangement formed thereon. The SMD LEDs are act as status indicators for the electronic devices with small, thin and compact size. The structure is expected to form SMD LED illuminating light to the top surface of the PCB with SMD LEDs connecting to the bonding pads on the bottom surface of the PCB. The method comprises forming through-holes on the PCB, placing SMD LEDs over the through-holes with their illuminating heads facing toward the top surface of the PCB, soldering the SMD LEDs with the bonding pads on the bottom surface of the PCB.