Abstract: The present invention discloses a light-emitting diode (LED) package structure, which includes a housing, a first electrode plate, a second electrode plate, a light-emitting diode, and a voltage regulation diode. The housing has a top surface forming a cavity, and the cavity contains therein a wall that divides the cavity into a light emission section and a voltage regulation section. By separately arranging the light-emitting diode and the voltage regulation diode in two different sections of the light emission section and the voltage regulation section, the present invention prevents the voltage regulation diode from affecting light flux of the light-emitting diode by absorbing light, thereby enhancing overall lighting performance of the LED package structure.

Abstract: The semiconductor device 1 comprises a housing 12 which has a recess 24 in the front surface 1; a pair of lead electrodes 20 which have the distal ends 34 exposed in the recess 24, protrude from the external surface of the housing 12, and are bent along the bottom surface 16 of the housing 12; and a semiconductor element 36 which is housed in the recess 24 and is electrically connected to the pair of lead electrodes 20. The housing 12 has grooves 30 which are formed on the pair of side surfaces 18 which adjoin the front surface 14 and the bottom surface 16 on the right and left sides so as to penetrate the housing 12 from the top surface 28 toward the bottom surface 16 of the housing 12. The grooves 30 preferably have width substantially equal to the thickness of the lead electrode 20. The grooves 30 are more preferably formed to be flush with the distal ends 34 of the lead electrode 20.

Abstract: A sealed semiconductor power module that may include a rectifier, such as a silicon controlled rectifier (SCR), is provided. The module includes an AlN substrate having a bottom surface positioned on a metallic base plate and a top surface that includes a first pad and a second pad, the substrate including a copper body on both of the two major surfaces. The module also includes a first die and a second die positioned on top of the first and second pads, respectively, the first die and the second die each including a main contact area on a top surface thereof, the first die including an isolated gate area on the top surface to which is coupled a gate terminal; and first and second power terminals in direct wirebondless electrical connection via molybdenum tabs with the main contact areas of the die.

Abstract: A tamper-resistant semiconductor device (5;20;30;40;50;60) which includes a plurality of electronic circuits formed on a circuitry side (6) of a substrate (7) having an opposite side which is a backside (8) of the semiconductor device, and comprises at least one light-emitting device (9a-f;21) and at least one light-sensing device (10a-f;22a-b) provided on the circuitry side (6) of the semiconductor device. The light-emitting device (9a-f;21) is arranged to emit light, including a wavelength range for which the substrate (7) is transparent, into the substrate towards the backside (8), and the light-sensing device (10a-f;22a-b) is arranged to sense at least a fraction of the emitted light following passage through the substrate (7) and reflection at the backside (8), and configured to output a signal indicative of a reflecting state of the backside, thereby enabling detection of an attempt to tamper with the backside (8) of the semiconductor device (5;20;30;40;50;60).

Abstract: Provided are a semiconductor package with a reduced lead pitch, and a display panel assembly having the semiconductor package. The semiconductor package includes a film having a hole formed therein, a plating pattern formed under the film and forming a wire; a semiconductor chip placed in the hole and electrically connected to the plating pattern; and a first passivation layer formed at a side opposite to the semiconductor chip about the plating pattern and protecting the plating pattern.

Abstract: A modular package for a light emitting device includes a leadframe having a top surface and including a central region having a bottom surface and having a first thickness between the top surface of the leadframe and the bottom surface of the central region. The leadframe may further include an electrical lead extending away from the central region. The electrical lead has a bottom surface and has a second thickness from the top surface of the leadframe to the bottom surface of the electrical lead. The second thickness may be less than the first thickness. The package further includes a package body on the leadframe surrounding the central region and exposing the bottom surface of the central region. The package body may be at least partially provided beneath the bottom surface of the lead and adjacent the bottom surface of the central region. Methods of forming modular packages and leadframes are also disclosed.

Abstract: A first interconnection is formed along a groove of a substrate and on a bottom surface of the groove, and has a first thickness. A second interconnection is electrically connected to the first interconnection and has a second thickness larger than the first thickness. An acceleration sensing unit is electrically connected to the second interconnection. A sealing unit has a portion opposed to the substrate with the first interconnection therebetween, and surrounds the second interconnection and the acceleration sensing unit on the substrate. A cap is arranged on the sealing unit to form a cavity on a region of the substrate surrounded by the sealing unit. Thereby, airtightness of the cavity can be ensured and also an electric resistance of the interconnection connected to the acceleration sensing unit can be reduced.

Abstract: Provided are a light emitting device package and a method for fabricating the same. The light emitting device package comprises a substrate; a light emitting device on the substrate; a zener diode comprising a first conductive type impurity region and two second conductive type impurity regions, the first conductive type impurity region being disposed in the substrate, the two second conductive type impurity regions being separately disposed in two areas of the first conductive type impurity region; and a first electrode layer and a second electrode layer, each of them being electrically connected to the second conductive type impurity regions and the light emitting device.

Abstract: Provided are a light emitting device, a light emitting device package, and a lighting apparatus. The light emitting device includes: an n-type semiconductor layer including a first area and a second area in a plane; an n-type contact layer disposed on the n-type semiconductor layer and has a first thickness in the first area and a second thickness in the second area; an undoped semiconductor layer disposed on the n-type contact layer having the first thickness in the first area; an active layer disposed on the undoped semiconductor layer in the first area; a p-type semiconductor layer disposed on the active layer in the first area; a first electrode disposed on the n-type contact layer having the second thickness in the second area; and a second electrode disposed on the p-type semiconductor layer.

Abstract: An optoelectronic semi-conductor component includes a first carrier having a top side and an underside laying opposite the top side of the first carrier, wherein the first carrier has a first and a second region; at least one optoelectronic semiconductor chip arranged at the top side on the first carrier; and at least one electronic component arranged in the second region at the underside of the first carrier, wherein the first region has a greater thickness in a vertical direction than the second region, wherein, at the underside, the first region projects beyond the second region in a vertical direction, and the at least one electronic component is electrically conductively connected to the at least one optoelectronic semi-conductor chip.

Abstract: A light emitting device includes a plurality of light emitting cells which are formed on a substrate and each of which has an N-type semiconductor layer and a P-type semiconductor layer located on a portion of the N-type semiconductor layer. The plurality of light emitting cells are bonded to a submount substrate. Heat generated from the light emitting cells can be easily dissipated, so that a thermal load on the light emitting device can be reduced. Since the plurality of light emitting cells are electrically connected using connection electrodes or electrode layers formed on the submount substrate, it is possible to provide light emitting cell arrays connected to each other in series. Further, it is possible to provide a light emitting device capable of being directly driven by an AC power source by connecting the serially connected light emitting cell arrays in reverse parallel to each other.

Abstract: A method for manufacturing a lighting device includes the steps of: preparing a substrate having at least one lighting chip, a frame for surrounding the lighting chip, and a cover body for covering one side of the frame; bonding the frame and the substrate so that the lighting chip is located within a region surrounded by the frame; and bonding the cover body and the frame so that the cover body and the frame cooperatively define a receptacle to cover the lighting chip. A bonding force between the cover body and the frame is configured to be smaller than a bonding force between the frame and the substrate so that when the cover body is separated from the frame, the bonding between the frame and the substrate is not destroyed.

Abstract: An optoelectronic semiconductor component (100) is specified, with a support (1) which has a mounting surface (11) and at least one penetration (3), where the penetration (3) extends from the mounting surface (11) to a bottom surface (12) of the support (1) that lies opposite the mounting surface (11); at least one optoelectronic semiconductor chip (2), which is mounted on the mounting surface (11); a radiation-transparent casting body (5), which surrounds the at least one optoelectronic semiconductor chip (2) at least in places, where the casting body (5) is arranged at least in places in the penetration (3) of the support (1).

Abstract: A method for manufacturing a semiconductor light emitting device includes: (a) providing a temporary substrate; (b) forming a multi-layered LED epitaxial structure, having at least one light emitting unit, on the temporary substrate, wherein a first surface of the light emitting unit contacts the temporary substrate, and the light emitting unit includes a n-type layer, an active region, and a p-type layer; (c) forming a n-electrode on the n-type layer; (d) forming a p-electrode on the p-type layer; (e) bonding a permanent substrate on the light emitting unit, the n-electrode and the p-electrode; (f) removing the temporary substrate to expose the first surface of the light emitting unit; and (g) removing a portion of the light emitting unit from the first surface, to expose at least one of the n-electrode and the p-electrode.

Abstract: This invention relates to an encapsulating method for sealed and water-proof LED, comprising the following steps: separately weld two leads or three leads onto the two pins of the LED; molding by mould and used for installing the holder of LED; put the LED with lead or various types of ornaments into the holder; buckle the holder; weld the periphery of the buckled holder by ultrasonic machine to form a sealed luminescent light. By means of welding the lead of the luminotron first, putting it into the holder later, and finally sealing it by ultrasonic machine, it can increase the up-to-standard rate and reduce the rejections on the premise of ensuring the sealing effect.

Abstract: A lighting device including an electroluminescent (EL) material is connected to an external power supply easily and the convenience is improved. In a lighting device having a light-emitting element including an electroluminescence (EL) layer, a housing including a light-emitting element has a terminal electrode electrically connected to the light-emitting element on a peripheral end portion. The terminal electrode provided on the housing so as to be exposed to the outside is in contact with a terminal electrode for the external power supply, so that the external power supply and the light-emitting element are electrically connected to each other and power can be supplied to the lighting device.

Abstract: A semiconductor light emitting device may include a first lead; a second lead; a first semiconductor light emitting element mounted on the first lead, being configured to emit a light having an optical emission spectrum no more than 400 nm from a light extraction surface of the first semiconductor light emitting element; a second semiconductor light emitting element mounted on the second lead, being configured to emit a light having a peak wavelength in no less than 550 nm; an ultraviolet absorbing layer configured to cover the light extraction surface of the first semiconductor light emitting element; and a sealing resin configured to cover the ultraviolet absorbing layer, first semiconductor light emitting element and the second semiconductor light emitting element.

Abstract: A submount and a manufacturing method thereof are provided. The submount, on which at least a semiconductor die is disposed, is mounted on a circuit board. The submount includes a substrate made of a conductive material or a semiconducting material, a plurality of conductive film patterns, and an insulating film pattern. A surface of the substrate includes a die-bonding area and a plurality of conductive areas. The conductive film patterns are individually distributed in the respective conductive areas. The insulating film pattern is disposed between the conductive film pattern and the insulating film pattern, but is not disposed in the die-bonding area. Furthermore, the semiconductor die is disposed in the die-bonding area and is electrically connected with the conductive film patterns. Because the insulating film pattern is not being disposed in the die-bonding area of the submount, the submount structure has improved heat transfer efficiency.

Abstract: A semiconductor light-emitting device includes a lead frame, a semiconductor light-emitting element mounted on the top surface of the bonding region, and a case covering part of the lead frame. The bottom surface of the bonding region is exposed to the outside of the case. The lead frame includes a thin extension extending from the bonding region and having a top surface which is flush with the top surface of the bonding region. The thin extension has a bottom surface which is offset from the bottom surface of the bonding region toward the top surface of the bonding region.

Abstract: An infrared data communication module (A1) includes a substrate (1) consisting of a first layer (1A) and a second layer (1B), where the first layer is formed with a recess (11) open at its obverse surface, and includes the opening of the recess (11) and the second layer is fixed to the first layer (1A) on the side opposite from the opening. The module also includes a bonding conductor layer (6A) covering at least the bottom surface of the recess (11), a light emitting element (2) mounted on the bonding conductor layer (6A), and a heat dissipating conductor layer (6C) sandwiched between the first layer (1A) and the second layer (1B) and connected to the bonding conductor layer (6A).

Abstract: A semiconductor light emitting device (A1) includes a case (1) and a plurality of semiconductor light emitting elements (3) arranged in the case. The case (1) is formed with a plurality of reflectors (11) each in the form of a truncated cone surrounding a respective one of the semiconductor light emitting elements (3). Current is applied to each of the semiconductor light emitting elements (3) via two wires (6). Each of the wires (6) includes a first end, and a second end opposite to the first end. The first end is connected to the semiconductor light emitting element (3), whereas the second end is located outside the space surrounded by the reflector (11).

Abstract: In the present invention, a semiconductor film is formed through a sputtering method, and then, the semiconductor film is crystallized. After the crystallization, a patterning step is carried out to form an active layer with a desired shape. The present invention is also characterized by forming a semiconductor film through a sputtering method, subsequently forming an insulating film. Next, the semiconductor film is crystallized through the insulating film, so that a crystalline semiconductor film is formed. According this structure, it is possible to obtain a thin film transistor with a good electronic property and a high reliability in a safe processing environment.

Abstract: A light emitting module includes a semiconductor light source, a first lead with a bonding pad to which the light source is attached, and a second lead spaced from the first lead in a first direction contained in the plane of the first die bonding pad. The second lead includes a wire bonding pad connected to the light source via a wire. The module also includes a case formed with a space elongated in the first direction for accommodating the light source. The first lead includes an extension extending from the first die bonding pad, and a mounting terminal connected to the extension. The extension extends in a second direction that is perpendicular to the first direction and contained in the plane of the first die bonding pad. The mounting terminal extends perpendicularly to the second direction. The extension overlaps the light source in the first direction.

Abstract: An LED package is provided. The LED package includes a leadframe having a pair of first electrodes and a pair of second electrodes, an LED chip disposed on the leadframe, and an encapsulant encapsulating a portion of the leadframe and the LED chip. The pair of first electrodes and the pair of second electrodes are electrically connected with the LED chip. The pair of first electrodes and the pair of second electrodes are located outside the encapsulant. The encapsulant has a top surface, a bottom surface, a first side surface and a second side surface opposite to the first side surface, wherein the pair of first electrodes extend from the first side surface to the bottom surface, and the pair of second electrodes extend from the second side surface to the bottom surface.

Abstract: An LED chip package structure with different LED spacing includes a substrate unit, a light-emitting unit, and a package colloid unit. The light-emitting unit has a plurality of LED chips electrically arranged on the substrate unit, and the LEDs are separated from each other by totally different spacing or partially different spacing. For example, the spacings between each two LED chips are from rarefaction to condensation, from condensation to rarefaction, from center rarefaction to outer condensation, from center condensation to outer rarefaction, alternate rarefaction and condensation, or alternate condensation and rarefaction. The package colloid unit covers the LED chips.

Abstract: An electric lamp (1) comprising a socket (2), a lamp bulb (4) mounted on the socket, in which bulb at least one semiconductor light source (5) is arranged. Cooling means (6) comprise at least two facing cooling fms (7,8) which are separated by at least one spacing (9). Said spacing being open to the environment and extending from the heart of the lamp bulb to the outer surface of the bulb. The lamp comprises a light redistributing, light transmittable wall (13) for redistributing light; optionally said light re-distributing wall comprises separate, discernable wall parts (14,15). For example, each discernable bulb part is shaped like a surface of a half prolate or half oblate ellipse. Thus, a desired double beam or homogeneous, omni-directional light distribution is obtainable.

Abstract: An electronic component package, includes a package substrate portion constructed by a silicon substrate in which a through hole is provided, an insulating layer formed on both surface sides of the silicon substrate and an inner surface of the through hole, and a through electrode filled in the through hole, and a frame portion provided upright on a peripheral portion of the package substrate portion to constitute a cavity on the silicon substrate, wherein an upper surface of the through electrode in the cavity is planarized such that a height of the through electrode is set equal to a height of the insulating layer. The frame portion is joined to the package substrate portion by the low-temperature joining utilizing the plasma process after the through electrode is planarized.

Abstract: In a semiconductor light emitting device having a matrix of a plurality of bumps composed of one n-bump formed on an n-electrode layer and of a large number of p-bumps formed on p-electrode layers, the occurrence of a faulty junction after mounting can be suppressed by placement of the n-bump at center of the bump array, because the position at the center is most resistant to occurrence of stress after the mounting. Employment of such a configuration of bump array increases reliability of mounting thereof while improving uniformity of light emission intensity in the semiconductor light emitting device having an increased size.

Abstract: The present invention provides a light emitting diode package including: a package mold having a first cavity and a second cavity with a smaller size than that of the first cavity; first and second electrode pads provided on the bottom surfaces of the first cavity and the second cavity, respectively; an LED chip mounted on the first electrode pad; a wire for providing electrical connection between the LED chip and the second electrode pad; and a molding material filled within the first cavity and the second cavity.

Abstract: A microstructured component with microsensors or other active microcomponent is provided. The microstructured component includes a substrate and at least one housing arranged on the substrate with one or more active microstructures situated on it.

Abstract: Provided are a semiconductor package and a method of manufacturing the same. The semiconductor package includes a semiconductor chip, a transparent substrate, an adhesive pattern, and at least one dew-proofer. The semiconductor includes a pixel area. The transparent substrate is disposed on the semiconductor chip. The adhesive pattern is disposed between the semiconductor chip and the transparent substrate and provides a space on the pixel area. At least one dew-proofer is disposed between the semiconductor chip and the transparent substrate and spaced from the adhesive pattern.

Abstract: A light emitting device package is provided. The light emitting device package includes: a light emitting device; and first and second electrodes disposed a predetermined distance from each other and respectively adhered to the light emitting device so as to be electrically connected to the light emitting device, the first and second electrodes applying a current or voltage to the light emitting device and emitting heat generated by the light emitting device.

Abstract: Disclosed is a light emitting device package. The light emitting device package includes a semiconductor substrate comprising a first surface at a first depth from an upper surface of the semiconductor substrate and a second surface at a second depth from the first surface; and a light emitting part on the second surface of the semiconductor substrate.

Abstract: Disclosed is a light emitting device according to the present embodiment, which includes, a substrate; a first electrode layer disposed on the substrate; a light emitting structure disposed on the first electrode layer, which includes a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer placed between the first and second conductive semiconductor layers; and a conductive layer, which includes a base conductive layer disposed under the substrate, a body connected to the base conductive layer while passing through the substrate and the first electrode layer, and a head disposed on top of the first electrode layer. Accordingly, the light emitting device is capable of improving light extraction efficiency and include a conductive layer to provide a carrier as well as a semiconductor layer, which are securely formed on the device.

Abstract: A III-nitride light emitting diode (LED) and method of fabricating the same, wherein at least one surface of a semipolar or nonpolar plane of a III-nitride layer of the LED is textured, thereby forming a textured surface in order to increase light extraction. The texturing may be performed by plasma assisted chemical etching, photolithography followed by etching, or nano-imprinting followed by etching.

Abstract: An exemplary LED module includes a board and an LED package mounted on the plate. The LED package includes a base, an LED chip mounted on a top surface of the base, two electrodes formed on the base and electrically connected to the LED chip and the board, and an encapsulant encapsulating the LED chip. A plurality of grooves are defined in the bottom surface of the base. When the LED package is secured on the plate via solder paste, the grooves function as a container for receiving excessive solder paste, thereby preventing the solder paste from spilling and floating or inclination of the LED package.

Abstract: Provided are a light emitting device and a light emitting device package. According to the light emitting device, a light emitting part and an electro-static discharge (ESD) protection part are disposed on a conductive support member. A connection layer electrically connects a first conducitve type semiconductor layer of the light emitting part to a second conductive type semiconductor layer of the ESD protection part. A ptrtection member is disposed on the connection layer and the ESD protection layer.

Abstract: A light emitting package comprising a support hosting at least one light emitting diode. A light transmissive dome comprised of a silicone including a phosphor material positioned to receive light emitted by the diode.

Abstract: A light emitter device, package, or lamp that comprises and light emitter and a light transmission control material to mask the appearance of at least the light emitter. In one embodiment, a light emitting diode (LED) based lamp is disclosed, comprising an LED light source. A phosphor is arranged remote to the light source such that light emitted from the light source passes through this phosphor and is converted by this phosphor. A light transmission control material is applied at least partially outside the LED light source and the phosphor to reversibly mask the appearance of the LED light source and the phosphor. The light transmission control material is less masking when the LED light source is active. A method for masking the appearance of inactive light emitters is also disclosed that comprising providing at least one light emitter.

Abstract: A light-emitting diode (LED) structure with an improved heat transfer path with a lower thermal resistance than conventional LED lamps is provided. For some embodiments, a surface-mountable light-emitting diode structure is provided having an active layer deposited on a metal substrate directly bonded to a metal plate that is substantially exposed for low thermal resistance by positioning it on the bottom of the light-emitting diode structure. This metal plate can then be soldered to a printed circuit board (PCB) that includes a heat sink. For some embodiments of the invention, the metal plate is thermally and electrically conductively connected through several heat conduction layers to a large heat sink that may be included in the structure.

Abstract: The present invention provides a light emitting device which can be improved in reliability and moreover which can be manufactured with low cost. A surface-mount type light emitting device 100 includes a substrate 10, a interconnect pattern 20 provided on the substrate 10, a semiconductor light emitting element 30 mounted on the substrate 10 and electrically connected to the interconnect pattern 20, a dome-shaped phosphor-containing sealing resin 40 for sealing the semiconductor light emitting element 30, a reflector 50 attached to the substrate 10 and having an opening 51 which overlaps with the semiconductor light emitting element 30 in a plan view, and a liquid-repelling layer 60 which covers an inner wall surface of the opening 51 of the reflector 50 and part of which is in contact with the dome-shaped phosphor-containing sealing resin 40.

Abstract: A light source includes a substrate, a light emitting diode on the substrate, and a plate supporting member attached to the substrate and surrounding the light emitting diode to form a cavity. In addition, the light source includes a plate on the plate supporting member such that a distance between the plate and the substrate is approximately less than or equal to 1 mm. Furthermore, the light source includes a phosphor layer on the plate opposite the cavity.

Abstract: A light emitting device package capable of achieving an enhancement in light emission efficiency and a reduction in thermal resistance, and a method for manufacturing the same are disclosed. The method includes forming a mounting hole in a first substrate, forming through holes in a second substrate, forming a metal film in the through holes, forming at least one pair of metal layers on upper and lower surfaces of the second substrate such that the metal layers are electrically connected to the metal film, bonding the first substrate to the second substrate, and mounting at least one light emitting device in the mounting hole such that the light emitting device is electrically connected to the metal layers formed on the upper surface of the second substrate.

Abstract: A light emitting device, which can be efficiently manufactured and maintain a stable light emitting property for a long period, is provided. The light emitting device comprises a first resin forming body including a periphery that forms a recess to house a light emitting element and a bottom that forms a bottom portion of the recess, and a second resin forming body which covers the light emitting element. The first resin forming body is composed of a thermosetting epoxy resin composite whose essential component is an epoxy resin. The bottom covers surfaces of lead frames excluding mounting regions of the light emitting element and wires. A thickness of the bottom is formed thinner than a thickness from the surface of the lead frames to a leading end of the light emitting element.

Abstract: The present invention provides a lighting head assembly that incorporates a high intensity LED package into an integral assembly including a heat sink and circuit board for further incorporation into other useful lighting devices. The present invention primarily includes a heat sink member that also serves as a mounting die and a reflector cup into which the LED package is mounted. The circuit board is placed behind the reflector cup and includes riser members that extend through holes in the rear wall of the reflector cup to facilitate electrical connections to the leads of the LED. This particular means for assembly allows the reflector cup and circuit board to cooperate to retain the LED package, provide electrical and control connections, provide integral heat sink capacity and includes an integrated reflector cup.

Abstract: Whereas incandescent light bulbs and other similar light sources known in the related art emit light in all directions, LED lamps can emit light in a single direction, and this is manifested in the problem of being unable to achieve light distribution characteristics satisfied by conventional headlamp designs. In accordance with an embodiment of the presently disclosed subject matter, an LED lamp for a light source of a headlamp can include an LED chip in the vicinity of the focus of a projection means and a shielding member covering a portion of the LED chip in a formation allowing a light distribution characteristic suitable for a vehicle front-illumination light to be obtained when light from the LED chip is magnified and projected in an illumination direction by a projection lens or the like constituting the projection means. Accordingly, accurate light distribution characteristics can be obtained in a simple manner by projecting in the illumination direction using the projection lens.

Abstract: A light emitting diode includes a thermal conductive substrate having at least one electrical isolation layer configured to provide vertical electrical isolation and a heat transfer path through the substrate from a front side (first side) to a back side (second side) thereof. The light emitting diode includes an anode having a through interconnect, and a cathode having a through interconnect, which are arranged side by side on the substrate. The light emitting diode also includes a LED chip mounted to the substrate between the anode and the cathode.

Abstract: An Organic light-emitting display apparatus capable of preventing permeation of external impurities such as oxygen or water vapor and enhancing impact resistance, and a method of manufacturing the organic light-emitting display apparatus. The organic light-emitting display apparatus includes a first substrate; a display unit disposed on the first substrate; a second substrate disposed over the display unit; and a sealing member by which the first substrate is combined with the second substrate. The sealant includes a first sealant which includes a filler and is spaced apart from the first substrate and the second substrate, and a second sealant which contacts the first substrate and the second substrate and covers at least a part of the first sealant.

Abstract: The invention relates to a high power LED package, in which a package body is integrally formed with resin to have a recess for receiving an LED chip. A first sheet metal member is electrically connected with the LED chip, supports the LED chip at its upper partial portion in the recess, is surrounded by the package body extending to the side face of the package body, and has a heat transfer section for transferring heat generated from the LED chip to the metal plate of the board and extending downward from the inside of the package body so that a lower end thereof is exposed at a bottom face of the package body thus to contact the board. A second sheet metal member is electrically connected with the LED chip spaced apart from the first sheet metal member for a predetermined gap, and extends through the inside of the package body to the side face of the package body in a direction opposite to the first sheet metal member. A transparent sealant is sealingly filled up into the recess.

Abstract: A method for forming a transparent electrode on a visible light-emitting diode is described. A visible light-emitting diode element is provided, and the visible light-emitting diode element has a substrate, an epitaxial structure and a metal electrode. The metal electrode and the epitaxial structure are located on the same side of the substrate, or located respectively on the different sides of the substrate. An ohmic metal layer is formed on a surface of the epitaxial structure. The ohmic metal layer is annealed. The ohmic metal layer is removed to expose the surface of the epitaxial structure. A transparent electrode layer is formed on the exposed surface. A metal pad is formed on the transparent electrode layer.