Electrode Materials Patents (Class 310/363)
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Patent number: 7797823Abstract: Apparatus and method for providing high density component assemblies, such as electromechanical or electro-optical assemblies.Type: GrantFiled: December 31, 2007Date of Patent: September 21, 2010Assignee: Alcatel LucentInventors: Fabien Létourneau, Stefano DeCecco, Peter Serjak
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Publication number: 20100231095Abstract: Provided are a bismuth-based piezoelectric material whose insulation property is improved while its performance as a piezoelectric body is not impaired and a piezoelectric device using the piezoelectric material. The piezoelectric material includes a perovskite-type metal oxide represented by the following general formula (1): Bix(Fe1-yCoy)O3??(1) where 0.95?x?1.25 and 0?y?0.30, and a root mean square roughness Rq (nm) of a surface of the piezoelectric material satisfies a relationship of 0<Rq?25y+2 (0?y?0.30).Type: ApplicationFiled: March 10, 2010Publication date: September 16, 2010Applicants: Canon Kabushiki Kaisha, Kyoto University, National Institute of Advanced Industrial Science TechnologyInventors: Makoto Kubota, Kenji Takashima, Masaki Azuma, Yoshitaka Nakamura, Yuichi Shimakawa, Takashi Iijima, Bong-Yeon Lee
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Publication number: 20100225710Abstract: A multilayer piezoelectric actuator and a liquid discharge head are provided which are equipped with dense piezoelectric ceramics having improved insulation performance. The multilayer piezoelectric actuator comprises a multilayered body comprising a plurality of piezoelectric ceramic layers containing a PZT phase as a main crystal phase; and an electrode layer containing Ag, which is disposed at least one of on the surface and in the interior of the multilayered body. A lattice constant c of c-axis of the PZT phase is 0.4085 nm to 0.4100 nm, and a ratio of the lattice constant c of the c-axis of the PZT phase and a lattice constant a of a-axis, namely, the ratio c/a, is 1.011 or more. A second phase containing Ag different from the PZT phase is not substantially contained in the piezoelectric ceramic layer. A Zn2SiO4 phase is contained at grain boundaries of the PZT phase, and a Pb2SiO4 phase is not substantially contained at the grain boundaries of the PZT phase.Type: ApplicationFiled: March 18, 2008Publication date: September 9, 2010Applicant: KYOCERA CORPORATIONInventors: Shuzo Iwashita, Yoshihiro Yuu
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Patent number: 7791248Abstract: An example flexoelectric piezoelectric composite has a piezoelectric response, which may be a direct piezoelectric effect, a converse piezoelectric effect, both effects, or only one effect. The flexoelectric composite comprises a first material, which may be substantially isotropic, the first material being present in a shaped form. The shaped form gives a piezoelectric response due to a flexoelectric effect in the first material. The shaped form may have ?m symmetry, or a polar variant of this form such as 4 mm symmetry.Type: GrantFiled: June 28, 2007Date of Patent: September 7, 2010Assignee: The Penn State Research FoundationInventors: L. Eric Cross, Wenyi Zhu, Nan Li, John Y. Fu
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Patent number: 7777398Abstract: A piezoelectric actuator includes external conductors formed on an outer surface of a piezoelectric component. The external conductors each include a thick-film conductor and a conductive reinforcer. The thick-film conductor is provided with a first thick-film conductor formed on the outer surface of the piezoelectric component, second thick-film conductors which are formed on part of an outer surface of the first thick-film conductor and which are in surface-contact with the outer surface of the first thick-film conductor. The conductive reinforcer is attached to outer surfaces of the second thick-film conductors.Type: GrantFiled: September 19, 2007Date of Patent: August 17, 2010Assignee: Murata Manufacturing Co., Ltd.Inventors: Shodo Takei, Hidekiyo Takaoka, Shigeharu Kasai, Koichi Hayashi, Shizuharu Watanabe
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Publication number: 20100201757Abstract: A piezoelectric element includes a lower electrode film disposed on a substrate, a piezoelectric layer 70 disposed on the lower electrode film, a upper electrode film 80 disposed on the piezoelectric layer 70, wherein the piezoelectric layer 70 is formed of a plurality of columnar grains 70a, and the upper electrode film 80 conforms to the surface shape of each of the grains 70a of the piezoelectric layer 70.Type: ApplicationFiled: April 26, 2010Publication date: August 12, 2010Applicant: SEIKO EPSON CORPORATIONInventors: Masato SHIMADA, Xin-Shan LI
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Publication number: 20100201227Abstract: Provided are a polymer and a polymer actuator including the polymer. The polymer is cross-linked by a cross-linking agent. When the polymer is used in the polymer actuator, the polymer actuator shows a high strain and may be stably operated at high temperatures.Type: ApplicationFiled: February 12, 2010Publication date: August 12, 2010Applicants: SAMSUNG ELECTRONICS CO., LTD., Sungkyunkwan University Foundation for Corporate CollaborationInventors: Seung-tae CHOI, Young-kwan LEE, Ja-Choon KOO, Jong-oh KWON, Su-jin PARK
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Patent number: 7770279Abstract: A micro-machined ultrasonic transducer substrate for immersion operation is formed by a particular arrangement of a plurality of micro-machined membranes that are supported on a silicon substrate. The membranes, together with the substrate, form surface microcavities that are vacuum sealed to provide electrostatic cells. The cells can operate at high frequency and can cover a broader bandwidth in comparison with conventional piezoelectric bulk transducers.Type: GrantFiled: February 5, 2008Date of Patent: August 10, 2010Assignee: VERMONInventors: An Nguyen-Dinh, Nicolas Felix, Aimé Flesch
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Patent number: 7770275Abstract: In an exemplary method a profile outline of a desired piezoelectric vibrating piece is formed on a surface of a piezoelectric wafer. The piece includes a base and at least two arms extending from the base. On a surface of the wafer within the profile outline, a first metal layer is formed comprising at least one of Cr, Ni, and Ti. A second metal layer, of Au and/or Ag, is formed on at least one selected region of the first metal layer. An electrode pattern is formed on at least one selected region of the second metal layer. From at least one selected location within the electrode pattern, the second metal layer is peeled away to form an electrode on the piezoelectric vibrating device comprising the first metal layer but not the second metal layer.Type: GrantFiled: August 27, 2008Date of Patent: August 10, 2010Assignee: Nihon Dempa Kogyo Co., Ltd.Inventor: Takehiro Takahashi
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Publication number: 20100194245Abstract: Provided are a piezoelectric thin film including a lead-free ferroelectric material and exhibiting high piezoelectric performance comparable to that of PZT, and a method of manufacturing the piezoelectric thin film. The piezoelectric thin film of the present invention has a multilayer structure in which a metal electrode film having a plane orientation of (100), a (Bi,Na)TiO3 film, and a (Bi,Na,Ba)TiO3 film having a plane orientation of (001) are laminated in this order. The piezoelectric thin film of the present invention can be applied to a wide range of fields and uses. For example, with the piezoelectric thin film of the present invention, an angular velocity sensor of the present invention having high sensitivity and a piezoelectric generating element of the present invention having excellent power generation characteristics can be constructed.Type: ApplicationFiled: April 6, 2010Publication date: August 5, 2010Applicant: PANASONIC CORPORATIONInventors: Takakiyo HARIGAI, Hideaki Adachi, Eiji Fujii
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Piezoelectric device, piezoelectric actuator, and liquid discharge device having piezoelectric films
Patent number: 7768178Abstract: In a piezoelectric device, a first electrode, a first piezoelectric film, a second piezoelectric film, and a second electrode are formed in this order on a first electrode formed above a surface of the substrate, and an intermediate electrode is arranged between the first and second piezoelectric films. Each of the first and second piezoelectric films has a thickness of 10 micrometers or smaller, and has a first surface facing toward the substrate and a second surface opposite to the first surface. At least one of the first and second surfaces has an arithmetic average surface roughness (Ra) of 0.5 micrometers or smaller.Type: GrantFiled: July 24, 2008Date of Patent: August 3, 2010Assignee: Fujifilm CorporationInventors: Takamichi Fujii, Tsuyoshi Mita, Yoshikazu Hishinuma -
Publication number: 20100187947Abstract: An acoustic wave device having an improved frequency-temperature characteristic and in which a spurious response of the higher order mode is suppressed includes a piezoelectric substrate made of LiNbO3, a SiO2 layer laminated on the piezoelectric substrate, and an IDT electrode disposed in an interface of the piezoelectric substrate and the SiO2 layer, wherein ? and ? of Euler angles expressed by (?, ?, ?) of LiNbO3 substrate satisfy ?=0° and 80°???130°, respectively. The acoustic wave device using an acoustic wave primarily having an SH wave, wherein ? is set to satisfy 5°???30°.Type: ApplicationFiled: January 22, 2010Publication date: July 29, 2010Applicant: Murata Manufacturing Co., Ltd.Inventor: Masakazu MIMURA
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Patent number: 7764007Abstract: An under bump metal film formed on a substrate includes a diffusion-resistant barrier layer made of a platinum group metal film, and an aluminum-based stress relaxation layer formed under the diffusion-resistant barrier layer.Type: GrantFiled: March 7, 2006Date of Patent: July 27, 2010Assignee: Panasonic CorporationInventors: Mitsuhiro Furukawa, Atsushi Takano
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Patent number: 7759847Abstract: To provide a multi-layer piezoelectric device having excellent durability in which the amount of displacement does not change even when the piezoelectric actuator is subjected to continuous operation over a long period of time under a high voltage and a high pressure, the multi-layer piezoelectric device comprises a stack formed by stacking piezoelectric layers and internal electrodes alternately one on another and external electrodes formed on a first side face and on a second side face of the stack, wherein one of the adjacent internal electrodes is connected to the external electrode formed on the first side face and the other internal electrode is connected to the external electrode formed on the second side face, while content of alkali metal in a range from 5 ppm to 300 ppm is contained.Type: GrantFiled: August 13, 2008Date of Patent: July 20, 2010Assignee: Kyocera CorporationInventors: Takeshi Okamura, Katsushi Sakaue, Mitsuo Kondo
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Publication number: 20100171393Abstract: A bistable electroactive polymer transducer is provided for electrically actuated deformation of rigid electroactive polymer members. The polymers have glass transition temperatures (Tg) above ambient conditions and turn into rubbery elastomers above Tg and have high dielectric breakdown strength in the rubbery state. They can be electrically deformed to various rigid shapes with maximum strain greater than 100% and as high as 400%. The actuation is made bistable by cooling below Tg to preserve the deformation. The dielectric actuation mechanism includes a pair of compliant electrodes in contact with a dielectric elastomer which deforms when a voltage bias is applied between the pair of electrodes. In some of the transducers of the present invention, the dielectric elastomer is also a shape memory polymer. The deformations of such bistable electroactive polymers can be repeated rapidly for numerous cycles.Type: ApplicationFiled: December 10, 2009Publication date: July 8, 2010Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIAInventors: Qibing Pei, Zhibin Yu
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Publication number: 20100156249Abstract: An apparatus for generating electrical energy may include; a first electrode, a second electrode spaced apart from the first electrode, the second electrode having a substantially planar flat plate shape, a conductor which electrically connects the first and second electrodes, and a nanowire disposed on the first electrode, the nanowire including a deformable piezoelectric material, wherein a Schottky contact is formed between the nanowire and the second electrode as the nanowires is deformed.Type: ApplicationFiled: June 10, 2009Publication date: June 24, 2010Applicants: Samsung Electronics Co., Ltd.Inventors: Dukhyun CHOI, Jaeyoung CHOI, Sang Woo KIM
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Publication number: 20100156250Abstract: A multi-layer piezoelectric element having high durability which allows it to increase the amount of displacement of a piezoelectric actuator under high voltage and high pressure and does not undergo a change in the amount of displacement during continuous operation in a high electric field and under a high pressure over a long time period is provided. The multi-layer piezoelectric element comprises a stack of at least one piezoelectric layer and a plurality of internal electrodes consisting of first and second internal electrodes placed one on another, a first external electrode formed on a first side face of the stack and connected to the first internal electrode and a second external electrode formed on a second side face of the stack and connected to the second internal electrode, wherein the bonding strength between the piezoelectric layer and the internal electrode is weaker than the bending strength of the piezoelectric layer.Type: ApplicationFiled: March 3, 2010Publication date: June 24, 2010Applicant: KYOCERA CORPORATIONInventors: Mitsuo Kondo, Masaki Terazono, Takeshi Okamura, Katsushi Sakaue
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Patent number: 7737612Abstract: A piezoelectric resonator includes a multi-layer top electrode configured such that a top most layer protects the underlying layers from subsequent etching, thereby preventing etch undercut of the top-most layer. In one embodiment, the multi-layer top electrode is configured as a bi-layer, so that the upper layer of the bi-layer stack protects all sides of the underlying layer from subsequent etch process steps. In an alternative embodiment, at least the perimeter of a multi-layer top electrode is completely covered with overlapping interconnect metal.Type: GrantFiled: April 1, 2008Date of Patent: June 15, 2010Assignee: Maxim Integrated Products, Inc.Inventors: Haim Ben Hamou, Ralph N. Wall, Guillaume Bouche
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Publication number: 20100141098Abstract: A piezoelectric multilayer component has a base body including a stack of dielectric layers, electrode layers and at least one predetermined breaking layer. The predetermined breaking layer is arranged at least for the most part in an inactive zone of the multilayer component and cracks under specific tensile loads.Type: ApplicationFiled: November 11, 2009Publication date: June 10, 2010Inventors: Bernhard Doellgast, Johann Schmidt
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Patent number: 7733000Abstract: To improve adhesive properties between an electrically conductive polymer membrane and a solid electrolyte membrane to each other, and thus to ensure the operation of an electrically conductive polymer actuator which effects a bending motion is aimed.Type: GrantFiled: May 1, 2009Date of Patent: June 8, 2010Assignee: Panasonic CorporationInventor: Yuji Kudoh
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Patent number: 7732997Abstract: Providing a manufacturing method of a piezoelectric element by which even if an electrode and a piezoelectric film stacked on a substrate are baked at a high temperature, the electrode does not oxidize and mutual diffusion between the substrate, the electrode and the piezoelectric film may be suppressed. The electrode is adapted as a laminated layer body which includes an electroconductive oxide layer, a mixture layer having an electroconductive oxide and electroconductive metal, and an electroconductive metal layer including the electroconductive metal from a substrate side, and the mixture layer above is adapted as a graded composition structure in which a ration of the electroconductive oxide is highest in an interface with the electroconductive oxide layer and lowest in an interface with the electroconductive metal layer.Type: GrantFiled: March 19, 2007Date of Patent: June 8, 2010Assignee: Canon Kabushiki KaishaInventors: Junri Ishikura, Naoari Shibata, Katsumi Aoki, Yasuyuki Saito
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Patent number: 7725996Abstract: A method for producing an actuator device, comprising the steps of: forming a vibration plate on a substrate; and forming a piezoelectric element composed of a lower electrode, a piezoelectric layer, and an upper electrode on the vibration plate, wherein in the step of forming the piezoelectric element, the upper electrode is formed on the piezoelectric layer by sputtering, a temperature of 25 to 250 (° C.) and a pressure of 0.4 to 1.5 (Pa) are used during the sputtering, and upon the sputtering, the upper electrode having a thickness of 30 to 100 (nm), stress of 0.3 to 2.0 (GPa), and specific resistance of 2.0 (×10?7 ?·m) or less is formed.Type: GrantFiled: August 9, 2006Date of Patent: June 1, 2010Assignee: Seiko Epson CorporationInventors: Xin-Shan Li, Tsutomu Nishiwaki
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Publication number: 20100127597Abstract: An acoustic boundary wave device includes a piezoelectric body, an IDT layer formed on the piezoelectric body, a pad electrode layer formed on the piezoelectric body and connected to the IDT layer, a first dielectric layer formed on the piezoelectric body and covering at least a part of the IDT electrode layer, and a second dielectric layer formed on the piezoelectric body, covering the first dielectric layer, and having an opening through which at least a part of a top face of the pad electrode layer is exposed. The metal forming lateral faces of the pad electrode layer diffuses more readily into the first dielectric layer than into the second dielectric layer. The second dielectric layer covers the lateral faces of the pad electrode layer and prevents the first dielectric layer from touching the lateral faces of the pad electrode layer.Type: ApplicationFiled: November 16, 2009Publication date: May 27, 2010Applicant: PANASONIC CORPORATIONInventors: HIROKI KAMIGUCHI, HIDEKAZU NAKANISHI, YOSUKE HAMAOKA, SHOJI OKAMOTO
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Patent number: 7714480Abstract: A piezoelectric/electrostrictive membrane sensor is provided, wherein a piezoelectric/electrostrictive body contains an alkali metal or an alkaline earth metal, and a sulfide and the main component of terminal electrodes are contained near the surface of the piezoelectric/electrostrictive body. A voltage equal to or higher than a withstand voltage is hardly applied to the piezoelectric/electrostrictive body, and consequently, the sensor is prevented from dielectric breakdown. In addition, the sensor is hardly electrostatically charged, and thus prevented from electrostatic discharge damage and attraction of dust, dirt or the like.Type: GrantFiled: December 16, 2008Date of Patent: May 11, 2010Assignee: NGK Insulators, Ltd.Inventors: Takao Ohnishi, Hideki Shimizu, Takaaki Koizumi
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Publication number: 20100109485Abstract: An electroacoustic component includes a substrate that includes a quartz single crystal. The quartz single crystal has a first Euler angle ?: ?5°???5°, a second Euler angle ?, and a third Euler angle ?. A contiguous region of the quartz single crystal has the following vertices Pi(?i, ?i): (23°, 20°), (60°, 17°), (110°, 30°), (105°, 42°), (60°, 30°), (23°, 25°).Type: ApplicationFiled: October 12, 2007Publication date: May 6, 2010Inventors: Ulrike Roesler, Evelyn Riha, Werner Ruile
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Publication number: 20100110148Abstract: A piezoelectric element includes a piezoelectric film containing lead (Pb), zirconium (Zr), and titanium (Ti). The piezoelectric film has a composition satisfying the relationship of Zr/(Ti+Zr)>Ti/(Ti+Zr) and has a polarization-electric field hysteresis loop having a Pm/2Pr of 1.95 or more and a Vc(?) of ?1.75 V or more, wherein Pm denotes saturation polarization, Pr denotes remanent polarization, and Vc(?) denotes a negative coercive electric field intensity.Type: ApplicationFiled: November 3, 2009Publication date: May 6, 2010Applicant: SEIKO EPSON CORPORATIONInventors: Akira Kuriki, Koji Sumi, Tatsuo Sawasaki, Tatsuro Torimoto, Motoki Takabe
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Patent number: 7710004Abstract: An insulating target material for obtaining a conductive complex oxide film represented by a general formula ABO3, the insulating target material including an oxide of an element A, an oxide of an element B, and at least one of an Si compound and a Ge compound.Type: GrantFiled: March 10, 2009Date of Patent: May 4, 2010Assignee: Seiko Epson CorporationInventors: Koji Ohashi, Setsuya Iwashita, Takeshi Kijima, Yasuaki Hamada
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Publication number: 20100102671Abstract: A piezoelectric device, having a piezoelectric vibrating piece and a circuit element being electrically connected, is provided with a package for storing inside at least the piezoelectric vibrating piece of the piezoelectric device. The package is made up of a substrate and a cover body, and on the outer surface of the package, an electrode terminal electrically connected to at least the circuit element or the piezoelectric vibrating piece is provided. The electrode terminal includes an external connecting terminal which is electrically connected with an external circuit board and an input-output terminal which is electrically non-connected with the external circuit board, at the time of mounting the package on the external circuit board. The surface of the external connecting terminal and that of the input-output terminal are formed of materials different from each other so that adhesive characteristics to a mounting material such as a solder are varied.Type: ApplicationFiled: September 28, 2007Publication date: April 29, 2010Applicant: CITIZEN FINETECH MIYOTA, CO., LTD.Inventor: Kazuo Murata
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Publication number: 20100102679Abstract: A piezoelectric porcelain composition includes a main ingredient represented by a general formula ((1?x)(K1?a?bNaaLib) (Nb1?cTac)O3?xM2M4O3) (where M2 represents Ca, Ba or Sr, M4 represents Zr, Sn or Hf, and 0.005?x?0.1, 0?a?0.9, 0?b?0.1, 0 5?a+b?0.9, and 0?c?0.3), and Mn is contained in an amount ranging from 2 to 15 mol, relative to 100 mol of the main ingredient, and the M4 is contained in an amount ranging from 0.1 to 5.0 mol, relative to 100 mol of the main ingredient. Preferably, Ni is contained in an amount ranging from 0.1 to 5.0 mol, relative to 100 mol of the main ingredient, and also preferably Yb, In and the like specific rare earth elements is contained. A ceramic layer in a ceramic base is formed of this piezoelectric porcelain composition. As a result, the degree of sintering in a reductive atmosphere is improved, and a piezoelectric porcelain composition allowing co-sintering with Ni, and a piezoelectric ceramic electronic component using the same are realized.Type: ApplicationFiled: December 9, 2009Publication date: April 29, 2010Applicant: MURATA MANUFACTURING CO., LTD.Inventor: Shinichiro Kawada
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Publication number: 20100103224Abstract: An electronic device has an electronic signal source electrically connected to a signal routing circuit, an electrically activated transducer to receive electronic signals through the signal routing circuit, and an anisotropic conductive film to provide electrical continuity between the signal routing circuit and the transducer, the anisotropic conductive film having material removed adjacent the transducer to reduce mechanical loading of the transducer.Type: ApplicationFiled: October 24, 2008Publication date: April 29, 2010Applicant: XEROX CORPORATIONInventors: BRADLEY JAMES GERNER, JOHN R. ANDREWS, PINYEN LIN
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Publication number: 20100096950Abstract: Conductive polymer films are respectively connected to fixed frames via a link member, and an electrolyte holding layer is placed so as to be made in contact with the conductive polymer films. The fixed frames are regulated by the link member.Type: ApplicationFiled: December 17, 2009Publication date: April 22, 2010Inventors: Sachio Nagamitsu, Kazuo Yokoyama
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Publication number: 20100090033Abstract: A multi-layer piezoelectric element having higher durability which experience less decrease in the amount of displacement even when operated continuously over a long period of time under a high pressure and a high voltage is provided. The multi-layer piezoelectric element comprises a plurality of piezoelectric layers and a plurality of internal electrode layers, wherein the piezoelectric layers and the internal electrode layers are stacked alternately one on another, and at least one of the plurality of internal electrode layers contains at least one nitride, titanium nitride or zirconium nitride.Type: ApplicationFiled: March 27, 2007Publication date: April 15, 2010Applicants: KYOCERA CORPORATION, SIEMENS AKTIENGESELLSCHAFTInventors: Takami Sakamoto, Masahiro Imagaki, Harald-Johannes Kastl, Carsten Schuh, Bernhard Doellgast, Atsushi Ochi
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Patent number: 7691286Abstract: A piezoelectric ceramic composition includes a primary component represented by the formula (1-x)(K1-a-bNaaLib)m(Nb1-c-dTacSbd)O3-xM1nM2O3, and 0.1 to 10 moles (preferably 1.5 to 10 moles) of at least one specific element selected from the group consisting of In, Sc, Y, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Yb, and Lu with respect to 100 moles of the primary component, wherein M1 is Ca, Sr, or Ba M2 is Ti, Zr, or Sn; and x, a, b, c, d, m, and n satisfy 0.005?x?0.1, 0?a?0.9, 0?b?0.3, 0?a+b?0.9, 0?c?0.5, 0?d?0.1, 0.9?m?1.1, and 0.9?n?1.1. Preferably, Mn, Ni, Fe, Zn, Cu, or Mg is further added. As a result, at both a very low and a high electric field, a high piezoelectric d constant can be stably obtained with a high efficiency.Type: GrantFiled: September 10, 2007Date of Patent: April 6, 2010Assignee: Murata Manufacturing Co., Ltd.Inventors: Shinichiro Kawada, Ryoko Katayama, Katsuhiro Horikawa
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Patent number: 7692368Abstract: A multilayer component includes a ceramic base body and at least one internal electrode in the ceramic base body. The at least one internal electrode includes holes, and is made of a material having a liquidus temperature that differs from a sintering temperature of the ceramic base body. The ceramic base body is sinterable such that formation of holes in the at least one internal electrode occurs during sintering.Type: GrantFiled: August 5, 2005Date of Patent: April 6, 2010Assignee: EPCOS AGInventors: Heinz Florian, Sigrid Ragossnig, Steffen Riemer, Peter Sedlmaier
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Publication number: 20100066212Abstract: The embodiments relate to a piezoelectric component including at least one fully active piezoelectric element comprising electrode layers and piezoelectric layers arranged therebetween. The electrode layers are conveyed to a lateral edge of the piezoelectric element and contacted there. The external electrode is attached in a structured fashion for electrical contacting and/or a structured external electrode is made available: The external electrode essentially includes two components, namely the contacting field and the contacting path. In the event of several piezoelectric elements (piezoelectric actuator in multilayer structure) stacked one above the other, the contacting path functions as a collector electrode, which connects the contacting fields of the piezoelectric elements to one another. The insulation path exists for the electrical insulation of the contacting path from electrode layers which are not to be contacted.Type: ApplicationFiled: July 30, 2009Publication date: March 18, 2010Applicant: Siemens AktiengesellschaftInventors: Stefan Denneler, Axel Ganster, Susanne Komely, Andreas Lenk, Carsten Schuh, Andreas Wolff, Jorg Zapf
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Patent number: 7679273Abstract: Exemplary embodiments of the present invention are related to an apparatus and method for providing a strain tolerant electrode, comprising: an upper layer; a lower layer; with the potential for a plurality of compliant members providing electrical communication between the upper layer and the lower layer; and wherein a surface of the upper layer is in direct contact with a surface of the lower layer to provide an electrical path between the upper layer and the lower layer.Type: GrantFiled: July 31, 2006Date of Patent: March 16, 2010Assignee: Delphi Technologies, Inc.Inventors: Charles D. Oakley, Rick D. Kerr, Russel H. Bosch
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Publication number: 20100060109Abstract: Disclosed herein is a device comprising a pair of electrodes; and a nanotube, a nanorod and/or a nanowire; the nanotube, nanorod and/or nanowire comprising a piezoelectric and/or pyroelectric polymeric composition; the pair of electrodes being in electrical communication with opposing surfaces of the nanotube, nanorod and/or a nanowire; the pair of electrodes being perpendicular to a longitudinal axis of the nanotube, nanorod and/or a nanowire.Type: ApplicationFiled: August 31, 2009Publication date: March 11, 2010Applicant: UNIVERSITY OF MASSACHUSETTSInventors: Thomas P. Russell, Jodie Lutkenhaus
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Patent number: 7656077Abstract: A laminated piezoelectric device obtained by alternately laminating the piezoelectric layers containing Pb and the conducting layers containing palladium as a conducting component, wherein the piezoelectric layer formed between the two conducting layers has layer regions where Pb and Pd are mixed together in the interfacial portions thereof relative to the conducting layers, the layer regions having a thickness of not larger than 3% of the thickness of the piezoelectric layer. The laminated piezoelectric device is formed by co-firing the Pb-containing piezoelectric layers and the palladium (Pd)-containing layers, the piezoelectric layers therein having a large insulation resistance and good piezoelectric characteristics.Type: GrantFiled: December 17, 2004Date of Patent: February 2, 2010Assignee: Kyocera CorporationInventors: Takaaki Hira, Takeshi Okamura, Masaki Terazono, Hirotaka Tsuyoshi, Ryuusuke Tsuyoshi, legal representative, Katsushi Sakaue
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Patent number: 7656070Abstract: A surface wave sensor apparatus has a structure such that, on a first principal surface of a base substrate having first through-hole conductors, surface acoustic wave devices are bonded via thermo-compression anisotropic conductive sheets, on first principal surfaces of piezoelectric substrates of the surface acoustic wave devices, electrodes, such as IDTs, are provided, respectively. These electrodes extend toward second principal surfaces via second through-hole conductors and are provided in the piezoelectric substrates. The first through-hole conductors overlap with the second through-hole conductors with the thermo-compression anisotropic conductive sheets being disposed therebetween, respectively.Type: GrantFiled: August 22, 2007Date of Patent: February 2, 2010Assignee: Murata Manufacturing Co., Ltd.Inventors: Michio Kadota, Koji Fujimoto
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Patent number: 7651655Abstract: A method of producing a dielectric layer made of a polycrystalline dielectric material having anisotropy in the coefficient of thermal expansion is provided, including the steps of providing a raw material powder, and heat treating the raw material powder at least to a temperature sufficient to cause a phase change from a first crystal orientation at room temperature to a different crystal orientation to provide an aggregate of oriented raw material particles having the same chemical composition as the raw material powder but having the different crystal orientation. The method also includes a step of forming a compact from the aggregate of oriented raw material particles, including a step of applying a shearing force to the aggregate and firing the compact to form the dielectric layer.Type: GrantFiled: December 13, 2005Date of Patent: January 26, 2010Assignee: NGK Insulators, Ltd.Inventors: Takaaki Koizumi, Hirofumi Yamaguchi, Iwao Ohwada, Tsutomu Nanataki
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Publication number: 20100007248Abstract: The present invention provides devices and structures and methods of use thereof in electrochemical actuation. This invention provides electrochemical actuators, which are based, inter-alia, on an electric field-driven intercalation or alloying of high-modulus inorganic compounds, which can produce large and reversible volume changes, providing high actuation energy density, high actuation authority and large free strain.Type: ApplicationFiled: September 10, 2008Publication date: January 14, 2010Applicant: Massachusetts Institute of TechnologyInventors: Yet-Ming Chiang, Steven R. Hall, Yukinori Koyama, Kyungyeol Song, E. Timothy Chin, Urs Rhyner, Dimitrios Sapnaras, Fernando Tubilla
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Publication number: 20090316306Abstract: A thin film piezoelectric element includes a piezoelectric thin film layer, a seed layer and an elastic substrate layer. The piezoelectric thin film layer is a laminated structure comprising a first electrode layer, a second electrode layer and a piezoelectric layer sandwiched between the first electrode layer and the second electrode layer. The seed layer is formed on the second electrode layer, and the elastic substrate layer is formed on the seed layer. The thin film piezoelectric element is a single layer structure and has an elastic substrate layer for supporting the single layer structure, thereby it has enough stiffness and flexibility to afford facilities for manufacture and assembly and to avoid film peeling and deformation, ultimately increasing the production efficiency and lowering the cost. The invention also discloses a method for manufacturing the thin film piezoelectric element, a head gimal assembly and a disk drive unit with the same.Type: ApplicationFiled: October 22, 2008Publication date: December 24, 2009Applicant: SAE Magnetics (H.K.) Ltd.Inventors: MingGao Yao, Lin Guo
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Publication number: 20090315432Abstract: Provided are a piezoelectric material without using lead or an alkali metal, the piezoelectric material having a stable crystal structure in a wide temperature range, high insulation property, and high piezoelectric property, and a piezoelectric element using the piezoelectric material, in which the piezoelectric material is made of a metal oxide having a tetragonal crystal structure and expressed by Ba(SixGeyTiz)O3 (here, 0?x?1, 0?y?1, and 0?z?0.5), the piezoelectric element includes the piezoelectric material and a pair of electrodes sandwiching the piezoelectric material, and at least one of the pair of electrodes is made of SrRuO3 or Ni.Type: ApplicationFiled: May 22, 2009Publication date: December 24, 2009Applicants: Canon Kabushiki Kaisha, Tokyo Institute of Technology, Kyoto University, University of Yamanashi, National Institute of Advanced Industrial Science and Technology, Tokyo University of Science Educational Foundation Administrative OrganizationInventors: Tatsuo Furuta, Kaoru Miura, Kenichi Takeda, Makoto Kubota, Hiroshi Funakubo, Masaki Azuma, Nobuhiro Kumada, Satoshi Wada, Takashi Iijima, Soichiro Okamura
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Patent number: 7633214Abstract: A multi-layer piezoelectric element having excellent durability in which the amount of displacement does not change even after subjecting to continuous operation over a long period of time under a high voltage and a high pressure is provided. The multi-layer piezoelectric element comprises a stack formed by stacking piezoelectric layers and internal electrodes alternately one on another and external electrodes the proportion of silver contained in electrically conductive material of the internal electrode near the junction with the external electrode is higher than the proportion of silver contained in electrically conductive material of the internal electrode located inside of the stack.Type: GrantFiled: September 22, 2004Date of Patent: December 15, 2009Assignee: Kyocera CorporationInventors: Takeshi Okamura, Katsushi Sakaue, Shigenobu Nakaumra
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Publication number: 20090302714Abstract: The present invention provides a piezoelectric composite sensor comprising a piezoelectric material layer formed of a piezoelectric composite obtained by mixing piezoelectric material powder with a polymer, and electrodes formed of a conductive composite or conductive polymer obtained by mixing conductive filling particles with a polymer matrix and formed on both surfaces of the piezoelectric material layer. The piezoelectric composite sensor of the present invention has advantages of superior piezoelectric and dielectric properties, high mechanical strength, improved reliability and process flexibility, a simplified process and reduced process costs, and improved productivity.Type: ApplicationFiled: January 16, 2006Publication date: December 10, 2009Inventor: Dong Guk Kim
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Publication number: 20090302716Abstract: A piezoelectric device which is a MEMS device is provided. In the device, the entire silicon layer of the SOI substrate is a p-type region. A plurality of n-type regions are formed in the silicon layer so as to be exposed to the upper surface of the silicon layer and spaced from each other. A piezoelectric film made of AlN is provided on the SOI substrate so as to contact the n-type region, and a conductor film made of aluminum is provided on the piezoelectric film. Thereby, the n-type region functions as a lower electrode and the conductor film functions as an upper electrode.Type: ApplicationFiled: June 8, 2009Publication date: December 10, 2009Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Ryoichi OHARA, Naoko YANASE, Takaaki YASUMOTO, Shingo MASUKO, Kenya SANO
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Publication number: 20090295256Abstract: In a multilayer piezoelectric element in which a plurality of piezoelectric layers and a plurality of metal layers are stacked alternately, the plurality of metal layers include a plurality of low-filled metal layers having a lower filling rate of metal composing the metal layers than oppositely disposed metal layers adjacent to each other in a stacking direction. In a multilayer piezoelectric element in which a plurality of piezoelectric layers and a plurality of metal layers are stacked alternately, the plurality of metal layers include a plurality of thin metal layers having a smaller thickness than oppositely disposed metal layers adjacent to each other in a stacking direction.Type: ApplicationFiled: June 15, 2006Publication date: December 3, 2009Applicant: KYOCERA CORPORATIONInventors: Takeshi Okamura, Masaki Terazono, Tomohiro Kawamoto, Takafumi Tsurumaru, Shigenobu Nakamura, Ken Yamamoto
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Publication number: 20090295877Abstract: To provide an electrostatic actuator capable of attaining a large diaphragm displacement by low voltage drive. Furthermore, a droplet discharge head provided with this electrostatic actuator, a method for driving a droplet discharge head, and a method for manufacturing an electrostatic actuator are provided. A diaphragm 4, an individual electrode 11 facing the diaphragm 4 with a gap 10 therebetween, while a voltage is applied between the diaphragm 4 and the individual electrode 11, and an insulating film 4a which is disposed on a surface of the diaphragm 4, the surface facing the individual electrode 11, are included, wherein the insulating film 4a is converted to an electret.Type: ApplicationFiled: August 7, 2009Publication date: December 3, 2009Applicant: SEIKO EPSON CORPORATIONInventors: Yoshifumi HANO, Masahiro FUJII
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Patent number: 7622854Abstract: In a piezoelectric element having a substrate, a lower electrode layered on the substrate, a piezoelectric body made of ceramic layered on top of the lower electrode and an upper electrode layered on the piezoelectric body, wherein a first metal layer is provided between the substrate and the lower electrode, a second metal layer is provided between the lower electrode and the piezoelectric body, and the first metal layer and the second metal layer are made of a metal selected from among metals of which the ionization tendency is not less than that of Cu, oxides of metals of which the ionization tendency is not less than that of Cu, and alloys of metals of which the ionization tendency is not less than that of Cu.Type: GrantFiled: April 8, 2008Date of Patent: November 24, 2009Assignee: Funai Electric Co., Ltd.Inventors: Manabu Murayama, Shigeo Maeda
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Patent number: 7622850Abstract: A piezoelectric device includes: a substrate; a first conductive layer formed over the substrate, the first conductive layer including at least one buffer layer formed of a (001) preferentially oriented lanthanum-based layered perovskite compound; a piezoelectric layer formed over the first conductive layer and including a piezoelectric having a perovskite structure; and a second conductive layer electrically connected with the piezoelectric layer.Type: GrantFiled: December 15, 2005Date of Patent: November 24, 2009Assignee: Seiko Epson CorporationInventors: Setsuya Iwashita, Takeshi Kijima, Koji Ohashi