Abstract: In accordance with an exemplary embodiment, a substrate processing apparatus includes: a tube assembly having an inner space in which substrates are processed and assembled by laminating a plurality of laminates, each of which includes an injection part and an exhaust hole; a substrate holder configured to support the plurality of substrates in a multistage manner in the inner space; a supply line connected to one injection part of the plurality of laminates to supply a process gas; and an exhaust line connected to one of a plurality of exhaust holes to exhaust the process gas, and the substrate processing apparatus that has a simple structure and induces a laminar flow of the process gas to uniformly supply the process gas to a top surface of the substrate.

Abstract: A poloidal field coil assembly for use in a tokamak. The poloidal field coil assembly comprises inner and outer poloidal field coils and a controller. The inner poloidal field coil is configured for installation inside a toroidal field coil of the tokamak. The outer poloidal field coil is configured for installation outside the toroidal field coil. The controller is configured to cause current to be supplied to the inner and outer poloidal field coils such that the combined magnetic field produced by the inner and outer poloidal field coils has a null at the toroidal field coil.

Abstract: A system for optical transduction of quantum information includes a qubit chip including a plurality of data qubits configured to operate at microwave frequencies, and a transduction chip spaced apart from the qubit chip, the transduction chip including a microwave-to-optical frequency transducer. The system includes an interposer coupled to the qubit chip and the transduction chip, the interposer including a dielectric material including a plurality of superconducting microwave waveguides formed therein. The plurality of superconducting microwave waveguides is configured to transmit quantum information from the plurality of data qubits to the microwave-to-optical frequency transducer on the transduction chip, and the microwave-to-optical frequency transducer is configured to transduce the quantum information from the microwave frequencies to optical frequencies.

Abstract: A method for improving the ion beam quality in an ion implanter is disclosed. In some ion implantation systems, contaminants from the ion source are extracted with the desired ions, introducing contaminants to the workpiece. These contaminants may be impurities in the ion source chamber. This problem is exacerbated when mass analysis of the extracted ion beam is not performed, and is further exaggerated when the desired feedgas includes a halogen. The introduction of a diluent gas in the ion chamber may reduce the deleterious effects of the halogen on the inner surfaces of the chamber, reducing contaminants in the extracted ion beam. In some embodiments, the diluent gas may be germane or silane.

Abstract: A plasma gate device comprises a plasma creation chamber, first through fourth dielectrics, and first through sixth electrodes. The plasma creation chamber is a space in which plasma is created from a first fluid and a second fluid. The first and second dielectrics form upper and lower boundaries on a first side of the plasma creation chamber. The third and fourth dielectrics form upper and lower boundaries on a second side of the plasma creation chamber. The first and second electrodes receive voltages to generate a first electric field which creates a first plasma on the first side of the plasma creation chamber. The third and fourth electrodes receive voltages to generate a second electric field which creates a second plasma on the second side of the plasma creation chamber. The fifth electrode extracts electrons from the first plasma. The sixth electrode injects electrons into the second plasma.

Abstract: Provided is a plasma generation apparatus including: a housing in which a window is defined at one side in a first direction; a stick type plasma source provided in the housing to generate plasma toward the window; and a driving unit coupled to the plasma source to allow one end of the plasma source to perform a reciprocating movement in a second direction that is a longitudinal direction of the window.

Abstract: A hydrogen producing reactor having a pellet core within a containment vessel. The vessel having an exit nozzle surrounding the pellet. Optionally, one or more elastomeric winding may be placed around the elastomeric or compressing material of the containment vessel; and, a water line to deliver fluid to the pellet. Whereby the containment compresses around the fuel pellet as it is used. Hydrogen and other products produced by the reactor within a cartridge is filtered with a clog-less filter and substantially pure hydrogen is output.

Abstract: In a plasma processing apparatus, an operation unit configured to calculate a parameter including any one of a load impedance, a load resistance and a load reactance of a high frequency power supply and a reflection wave coefficient of a high frequency power, and a controller configured to sequentially perform multiple cycles, each having plural stages which are performed in sequence. The controller is configured to control a setting of the high frequency power supplied to an electrode to be changed at a time point when the parameter exceeds a threshold value after a processing gas is changed. The changing of the setting of the high frequency power includes changing a power level of the high frequency power and/or changing the high frequency power from one of a continuous wave and a pulse-modulated high frequency power to the other thereof.

Abstract: A chamber includes a lower electrode and an upper electrode. The lower electrode is defined to transmit a radiofrequency current through the chamber and to support a semiconductor wafer in exposure to a plasma within the chamber. The upper electrode is disposed above and in a spaced apart relationship with the lower electrode. The upper electrode is electrically isolated from the chamber and is defined by a central section and one or more annular sections disposed concentrically outside the central section. Adjacent sections of the upper electrode are electrically separated from each other by a dielectric material. Multiple voltage sources are respectively connected to the upper electrode sections. Each voltage source is defined to control an electric potential of the upper electrode section to which it is connected, relative to the chamber. The electric potential of each upper electrode section influences an electric potential of the plasma within the chamber.

Abstract: A device and method for magnetic field confinement of plasma is formed by a cylindrically stacked column of direct current-carrying magnetic field coils with electrodes adjacently interior to each magnetic field coils so as to induce plasma rotation about an annular confinement region. Each field coil produces a magnetic field alternating in direction relative to adjacent coils and, so as to maintain consistent overall azimuthal direction of plasma rotation, electric field electrodes alternate accordingly in polarity along the axial length of the device. The device may be used for inducing nuclear fusion, for the ionic or isotopic separation of elements, creation of thrust by ejecting mass along the axial direction of the device, for creating a gravitational acceleration field, and for creating a state change beyond plasma.

Abstract: A device is described herein which may comprise a chamber, a fluid line, a pressurized source material in the fluid line, a component restricting flow of the source material into the chamber, a sensor measuring flow of a fluid in the fluid line and providing a signal indicative thereof, and a pressure relief valve responsive to a signal to reduce a leak of source material into the chamber in the event of a failure of the component.

Abstract: A device (200) for generating a plasma that comprises a plasma source (241) designed as a hollow space and a resonator (201) that includes a waveguide (211, 212, 2131) and the plasma source (241), wherein the waveguide (212, 213) is operatively connected with the plasma source (241); the device further comprising a first coupling means (231) for energy introduction (251) and a second coupling means (232) for energy extraction (252), wherein each coupling means (231, 232) is in an energy- and signal-carrying (251, 252) operative connection with the waveguide; the device further comprising an active element (261) for energy supply to the resonator (201), operatively connected with the first (231) and the second (232) coupling means, wherein the plasma source (241) is at least partially integrated into a section of the waveguide (211, 212, 213) that extends between the first coupling means (231) and the second coupling means (232).

Abstract: A plasma processing apparatus may include a process chamber having an interior processing volume; a first RF coil to couple RF energy into the processing volume; a second RF coil to couple RF energy into the processing volume, the second RF coil disposed coaxially with respect to the first RF coil; and a third RF coil to couple RF energy into the processing volume, the third RF coil disposed coaxially with respect to the first RF coil, wherein when RF current flows through the each of the RF coils, either the RF current flows out-of-phase through at least one of the RF coils with respect to at least another of the RF coils, or the phase of the RF current may be selectively controlled to be in-phase or out-of-phase in at least one of the RF coils with respect to at least another of the RF coils.

Abstract: A flange, which forms a portion of a vacuum container, has a rectangular opening surrounded by an insulating frame. A plate-shaped radio-frequency antenna conductor 13 is provided so as to cover the opening, with the insulating frame clamped thereby. In this structure, a radio-frequency power source is connected via a matching box to one end along the length of the radio-frequency antenna conductor, the other end is connected to ground, and electric power is supplied so that a radio-frequency current flows from one end of the radio-frequency antenna conductor to the other. By this method, the impedance of the radio-frequency antenna conductor can be lowered, and high-density plasma with a low electron temperature can be efficiently generated.

Abstract: A plasma light source includes a pair of coaxial electrodes 10 facing each other, a radiation environment sustaining device 20 that supplies a plasma medium into the insides of the coaxial electrodes and holds the coaxial electrodes at a temperature and a pressure suitable for plasma generation, and a voltage application device 30 that applies a discharge voltage of an inverted polarity to each of the coaxial electrodes. Tubular discharge 4 is formed between the pair of coaxial electrodes and plasma 3 is confined in an axial direction of the coaxial electrodes.

Abstract: Disclosed herein are systems, methods and apparatuses for dissociating a non-activated gas through a disc-shaped plasma in a remote plasma source. Two inductive elements, one on either side of the disc-shaped plasma, generate a magnetic field that induces electric fields that sustain the disc-shaped plasma. The inductive elements can be coiled conductors having any number of loops and can be arranged in planar or vertical coils or a combination of planar and vertical coils. Additionally, the ratio of inductive element radius to gap distance between the two inductive elements can be configured to achieve a desired vertical plasma confinement.

Abstract: A plasma source includes upper and lower portions. In a first aspect, an electrical power source supplies greater power to the upper portion than to the lower portion. In a second aspect, the plasma source includes three or more power couplers that are spaced apart vertically, wherein the number of plasma power couplers in the upper portion is greater than the number of plasma power couplers in the lower portion. The upper and lower portions of the plasma source can be defined as respectively above and below a horizontal geometric plane that bisects the vertical height of the plasma source. Alternatively, the upper and lower portions can be defined as respectively above and below a horizontal geometric plane that bisects the combined area of first and second workpiece positions.

Abstract: A laser-sustained plasma illuminator system includes at least one laser light source to provide light. At least one reflector focuses the light from the laser light source at a focal point of the reflector. An enclosure substantially filled with a gas is positioned at or near the focal point of the reflector. The light from the laser light source at least partially sustains a plasma contained in the enclosure. The enclosure has at least one wall with a thickness that is varied to compensate for optical aberrations in the system.

Abstract: Embodiments relate generally to semiconductor device fabrication and processes, and more particularly, to an apparatus and arrangements of magnetic field generators configured to generate rotating magnetic fields to facilitate physical vapor deposition (“PVD”). In one embodiment, a magnetic field generator apparatus can include a rotatable magnetic field and a counterbalance magnetic field generator that rotates about the axis of rotation in opposition to the rotatable magnetic field generator. The rotatable magnetic field generator generates a first magnitude of a magnetic field adjacent to a first circumferential portion of a circular region. The counterbalance magnetic field generator generates a second magnitude of the magnetic field adjacent to a second circumferential portion.

Abstract: An apparatus and method for containing plasma and forming a Field Reversed Configuration (FRC) magnetic topology are described in which plasma ions are contained magnetically in stable, non-adiabatic orbits in the FRC. Further, the electrons are contained electrostatically in a deep energy well, created by tuning an externally applied magnetic field. The simultaneous electrostatic confinement of electrons and magnetic confinement of ions avoids anomalous transport and facilitates classical containment of both electrons and ions. In this configuration, ions and electrons may have adequate density and temperature so that upon collisions ions are fused together by nuclear force, thus releasing fusion energy. Moreover, the fusion fuel plasmas that can be used with the present confinement system and method are not limited to neutronic fuels only, but also advantageously include advanced fuels.

Abstract: A physical vapor deposition system may include an RF generator configured to supply a pulsing AC process signal to a target in a physical vapor deposition chamber via the RF matching network. A detector circuit may be coupled to the RF generator and configured to sense the pulsing AC process signal and to produce a corresponding pulsing AC voltage magnitude signal and pulsing AC current magnitude signal. An envelope circuit may be electrically coupled to the detector circuit and configured to receive the pulsing AC voltage and current magnitude signals and to produce a DC voltage envelope signal and a DC current envelope signal. A controller may be electrically coupled to the envelope circuit and the RF matching network and configured to receive the DC voltage and current envelope signals and to vary an impedance of the RF matching network in response to the DC voltage and current envelope signals.

Abstract: A RF power supply system for delivering periodic RF power to a load. A power amplifier outputs a RF signal to the load. A sensor measures the RF signal provided to the load and outputs signals that vary in accordance with the RF signal. A first feedback loop enables control the RF signal based upon power determined in accordance with output from the sensor. A second feedback loop enables control the RF signal based upon energy measured in accordance with signals output from the sensor. Energy amplitude and duration provide control values for varying the RF signal. The control system and techniques are applicable to both pulsed RF power supplies and in various instances to continuous wave power supplies.

Abstract: Apparatus for forming a magnetic field and methods of use thereof are provided herein. In some embodiments, a plurality of coils having substantially similar dimensions disposed about a process chamber in a symmetric pattern centered about a central axis of the process chamber, wherein the plurality of coils are configured to produce a magnetic field having a plurality of magnetic field lines that are substantially planar and substantially parallel. In some embodiments, the plurality of coils comprises eight coils disposed about the process chamber, wherein each of the eight coils is offset by an angle of about 45 degrees from respective adjacent coils of the eight coils.

Abstract: A method to modulate the density of an electron beam as it is emitted from a cathode, the method comprised of connecting a source of pulsed input power to the input end of a nonlinear transmission line and connecting the output end directly to the cathode of an electron beam diode by a direct electrical connection.

Abstract: A method and apparatus is provided for generating a plasma electron flood using microwave radiation. In one embodiment, a microwave PEF apparatus is configured to generate a magnetic field that rapidly decays over a PEF cavity, resulting in a static magnetic field having a high magnetic field strength near one side (e.g., “bottom”) of the PEF cavity and a low magnetic field strength (e.g., substantially zero) near the opposite side (e.g., “top”) of the PEF comprising an elongated extraction slit. In one particular embodiment, the one or more permanent magnets are located at a position that is spatially opposed to the location of the elongated extraction slit to achieve the rapidly decaying magnetic field. The magnetic field results in an electron cyclotron frequency in a region of the cavity equal to or approximately equal to a microwave radiation frequency so that plasma is generated to diffuse through the extraction apertures.

Abstract: Embodiments of the present invention generally provide a plasma source apparatus, and method of using the same, that is able to generate radicals and/or gas ions in a plasma generation region that is symmetrically positioned around a magnetic core element by use of an electromagnetic energy source. In general, the orientation and shape of the plasma generation region and magnetic core allows for the effective and uniform coupling of the delivered electromagnetic energy to a gas disposed in the plasma generation region. In general, the improved characteristics of the plasma formed in the plasma generation region is able to improve deposition, etching and/or cleaning processes performed on a substrate or a portion of a processing chamber that is disposed downstream of the plasma generation region.

Abstract: Systems, methods, and Apparatus for controlling the spatial distribution of a plasma in a processing chamber are disclosed. An exemplary system includes a primary inductor disposed to excite the plasma when power is actively applied to the primary inductor; at least one secondary inductor located in proximity to the primary inductor such that substantially all current that passes through the secondary inductor results from mutual inductance through the plasma with the primary inductor. In addition, at least one terminating element is coupled to the at least one secondary inductor, the at least one terminating element affecting the current through the at least one secondary inductor so as to affect the spatial distribution of the plasma.

Abstract: The invention relates to a device for producing and/or confining a plasma, said device comprising a chamber in the space of which the plasma is produced and/or confined, said chamber including a wall defining a housing inside the chamber and encompassing said space, wherein said device is characterized in that it comprises at least one assembly for producing and/or confining plasma, each assembly being composed of magnets having only an axial magnetization direction and being recessed in the wall defining the housing, so that the magnetization direction of all the magnets defining each assembly is substantially perpendicular to the housing defined by the wall and so that the assembly is substantially symmetrical to the housing, wherein the magnetic field lines do not extend through the wall of the chamber. The invention also relates to a method for producing and/or confining a plasma.

Abstract: The present invention is a plasma generation source and a thing that is in its application and it is for getting high quality thin film by generating even high density plasma in high vacuum and like this plasma generation source applying like this plasma generation source to sputtering system, neutral particle beam source, thin film deposition system combining sputtering system and neutral particle beam source. According to the present invention, it generates plasma by using microwave through the microwave irradiating equipment and magnetic field by more than one pair of the belt type magnets and above goal can be accomplished maximizing plasma confinement effect by inducing electron returning trajectory in accordance with above continuous structure on belt type magnet.

Abstract: A thermionic emission device includes an insulating substrate, a patterned carbon nanotube film structure, a positive electrode and a negative electrode. The insulating substrate includes a surface. The surface includes an edge. The patterned carbon nanotube film structure is partially arranged on the surface of the insulating substrate. The patterned carbon nanotube film structure includes two strip-shaped arms joined at one end to form a tip portion protruded from the edge of the surface of the insulating substrate and suspended. The patterned carbon nanotube film structure includes a number of carbon nanotubes parallel to the surface of the insulating substrate. The patterned carbon nanotube film structure is connected between the positive electrode and the negative electrode in series.

Abstract: An ignitron apparatus has an airtight tubular housing having a first sealed end and a second sealed end. An anode is connected at the first sealed end, projecting into the housing, and a recess at the second sealed and forms a well which contains a quantity of liquid gallium or gallium alloy making up the cathode. An ignitor projects through the liquid metal and into the housing. The inner surface of the housing includes at least one plating-reduction structure to prevent electrical shorting of the apparatus caused by plating of the liquid metal.

Abstract: A method of sustaining a plasma, by focusing a first wavelength of electromagnetic radiation into a gas within a volume, where the first wavelength is substantially absorbed by a first species of the gas and delivers energy into a first region of a plasma having a first size and a first temperature. A second wavelength of electromagnetic radiation is focused into the first region of the plasma, where the second wavelength is different than the first wavelength and is substantially absorbed by a second species of the gas and delivers energy into a second region of the plasma region within the first region of the plasma having a second size that is smaller than the first size and a second temperature that is greater than the first temperature.

Abstract: A plasma source includes a first rod forming a quarterwave antenna, surrounded by at least one parallel rod forming a coupler and which is substantially the same length as the first rod, set to a reference potential, the coupler rods being evenly distributed radially about the first rod, at a distance of around one-fifth to one-twentieth of the quarter of the wavelength.

Abstract: A pair of coaxial electrodes 10 that face each other, a discharge-environment-maintaining device 20, and a voltage-applying device 30 are provided. Each coaxial electrode 10 includes a center electrode 12, a guide electrode 14 which surrounds the front end portion of the facing center electrode, and an insulation member 16 which insulates the center electrode and the guide electrode from each other. The insulation member 16 is formed of partially porous ceramics including an insulative dense portion 16a and a porous portion 16b. The insulative dense portion 16a includes a reservoir 18 which holds a plasma medium therein, and by the porous portion 16b, the inner surface of the reservoir 18 communicates with a gap between the center electrode 12 and the guide electrode 14 through the inside of the insulative dense portion 16a.

Abstract: A light source is powered by a magnetron and has a quartz crucible having a plasma void with an excitable fill, from which light radiates in use. Two aluminum attachment blocks are attached together and the block is attached to a casing of the magnetron by screws—not shown. The quartz crucible is attached to the block by a Faraday cage, in the form of a perforate metal enclosure secured at its rim to the block. An output formation of the magnetron has a conductive, copper cap fitted in electrical contact with it. The cap is extended by a copper rod. The rod extends through the blocks into a bore in the crucible for coupling microwaves from the magnetron into the crucible. An airspace is provided around the cap in the block. From the cap, the rod extends with negligible air gap in an alumina ceramic tube through the airspace and a boss of the block located in an aperture in an end wall of the block.

Abstract: A plasma confinement apparatus, and method for confining a plasma are described and which includes, in one form of the invention, a plurality of electrically insulated components which are disposed in predetermined spaced relation, one relative to the others, and surrounding a processing region of a plasma processing apparatus, and wherein a plurality of passageways are defined between the respective insulated components; and at least one electrically conductive and grounded component forms an electrical field shielding for the processing region.

Abstract: A linear actuator comprised of an actuator body having a first portion and a second portion, each arranged along a longitudinal axis of the actuator body. A vacuum bellows is concentrically located in the first portion and is configured to seal a vacuum environment from the second portion. A linear motion shaft is concentrically located substantially within the actuator body and is configured to move in a linear direction along the longitudinal axis. An electrically conductive portion of the shaft is concentrically located substantially within the vacuum bellows and electrically insulated therefrom and is configured to receive and conduct a signal. A lift force generating portion of the shaft is concentrically located substantially within the second portion. An electrical contact pad is electrically coupled to the conductive portion of the shaft and is configured to couple the signal to another surface upon activation of the shaft.

Abstract: A plasma source comprising an RF coupling system, magnets or coils that generate magnetic fields, a gas injection system, and a vacuum tight, RF transparent gas containment tube, wherein the RF coupling system comprises an RF coupler and the plasma source further comprises a choke point wherein the ratio of the field strength at said choke point to the field strength at said RF coupler is greater than two.

Abstract: A glow discharge spectrometer discharge lamp includes: a lamp body having a vacuum enclosure connected to pump elements and to injector elements for injecting an inert gas into the enclosure; a hollow cylindrical first electrode of longitudinal axis X-X?; a second electrode for receiving a sample for analysis and for holding the sample facing one end of the cylindrical electrode; electric field generator including an applicator for applying to the terminals of the electrodes an electric field that is continuous, pulsed, radiofrequency, or hybrid, and suitable for generating a glow discharge plasma in the presence of the gas; coupler elements for coupling the discharge lamp to a spectrometer suitable for measuring at least one component of the plasma; and magnetic field generator elements for generating a magnetic field having field lines oriented along the axis X-X?, the magnetic field being uniform in orientation and in intensity over an area of the sample that is not less than the inside area of the hollow

Abstract: An apparatus for producing plasma, includes a container provided with at least one discharge electrode and a power supply unit that has at least one coupling electrode that can be capacitively coupled to the discharge electrode. The power supply unit is adapted to be removable from the container. The at least one coupling electrode is disposed beneath an insulating layer. In this way, the user can not come into direct contact with a coupling electrode after removing the power supply unit.

Abstract: A plasma processing device includes a first electrode plate (3), a second electrode plate (4), a matching device (8), a power distribution device (9) and a power supply device (1). The first electrode plate (3) includes at least two sub-electrode plates (31, 32) insulated from each other; the power supply device (1) is connected to the power distribution device (9) via the matching device (8); the power distribution device (9) is connected to the first electrode plate (3) for inputting and distributing the power of the power supply device (1) to each of the sub-electrode plates (31, 32); the power distribution device (9) at least includes capacitors (C1, C2) and/or inductances (L1, L2).

Abstract: A system and a method of generating radiation and/or particle emissions are disclosed. In at least some embodiments, the system includes at least one laser source that generates a first pulse and a second pulse in temporal succession, and a target, where the target (or at least a portion the target) becomes a plasma upon being exposed to the first pulse. The plasma expand after the exposure to the first pulse, the expanded plasma is then exposed to the second pulse, and at least one of a radiation emission and a particle emission occurs after the exposure to the second pulse. In at least some embodiments, the target is a solid piece of material, and/or a time period between the first and second pulses is less than 1 microsecond (e.g., 840 ns).

Abstract: A plasma confinement assembly for a semiconductor processing chamber is provided. The assembly includes a plurality of confinement rings disposed over each other, and each of the plurality of confinement rings is separated by a space. A plunger moveable in a plane substantially orthogonal to the confinement rings. A proportional adjustment support is provided and coupled to the plunger. The proportional adjustment support is configured to move the confinement rings to one or more positions, such that the plunger is settable in positions along the plane. The positions define the space separating confinement rings, and the space is proportionally set between the confinement rings. The proportional adjustment support is defined by a plurality of support legs, and each of the support legs is pivotably interconnected with at least one other support leg.

Abstract: Methods for calibrating RF power applied to a plurality of RF coils are provided. In some embodiments, a method of calibrating RF power applied to a first and second RF coil of a process chamber having a power divider to control a first ratio equal to a first magnitude of RF power provided to the first RF coil divided by a second magnitude of RF power provided to the second RF coil, may include measuring a plurality of first ratios over a range of setpoint values of the power divider, comparing the plurality of measured first ratios to a plurality of reference first ratios, and adjusting an actual value of the power divider at a given setpoint value such that the first ratio of the power divider at the given setpoint matches the corresponding reference first ratio to within a first tolerance level.

Abstract: A processing speed may be easily controlled over the wide range within the impedance variation range.

Abstract: A plasma processing apparatus includes a vacuum evacuable processing chamber, at least a portion of which is formed of a dielectric window; a substrate supporting unit for supporting a target substrate in the processing chamber; and a processing gas supply unit for supplying a desired processing gas into the processing chamber. Further, the plasma processing apparatus includes an RF antenna provided outside the dielectric window; a high frequency power supply unit for supplying to the RF antenna a high frequency power; and a switching network switched among a parallel mode, a multiplication series mode, and a minimization series mode.

Abstract: This invention relates to a plasma source in the form of plasma generator (13) which utilizes an antenna (11) and an RF source (12). The generated plasma flows into a chamber (14) and ions are accelerated out of the chamber (14) by grid (15). A body 16 is located in the volume for creating local losses and thereby reducing local plasma density.

Abstract: Embodiments of the present invention generally provide an inductively coupled plasma (ICP) reactor having a substrate RF bias that is capable of control of the RF phase difference between the ICP source (a first RF source) and the substrate bias (a second RF source) for plasma processing reactors used in the semiconductor industry. Control of the RF phase difference provides a powerful knob for fine process tuning. For example, control of the RF phase difference may be used to control one or more of average etch rate, etch rate uniformity, etch rate skew, critical dimension (CD) uniformity, and CD skew, CD range, self DC bias control, and chamber matching.

Abstract: A patterned beam of radiation is projected onto a substrate. A reflective optical element is used to help form the radiation beam from radiation emitted from a plasma region of a plasma source. In the plasma source, a plasma current is generated in the plasma region. To reduce damage to the reflective optical element, a magnetic field is applied in the plasma region with at least a component directed along a direction of the plasma current. This axial magnetic field helps limit the collapse of the Z-pinch region of the plasma. By limiting the collapse, the number of fast ions emitted may be reduced.

Abstract: A RF matching network is described, and which includes a 1st to nth RF generators, and wherein each RF generator has a different frequency, and wherein the frequencies of the 1st to the nth RF input ports decline in sequence, and wherein between the ith frequency RF input port, and the output port is a ith circuit, which has a high impedance at the output port to all RF generator frequencies other than the ith frequency; and wherein the ith circuit, when connected to a RF generator with the ith frequency, and wherein measuring from the output port to the ith circuit, the ith circuit has a first impedance at the ith frequency; and when measuring from the output port in the opposite direction to the ith circuit, the ith circuit has a second impedance at the ith frequency; and wherein the first impedance is a substantial conjugate match of the second impedance.