Abstract: In certain embodiments, an apparatus for providing a fixed impedance transformation network for driving a plasma chamber includes a pre-match network adapted to couple between an Active RF match network and a plasma chamber load associated with the plasma chamber. The pre-match network includes (1) a first capacitive element; (2) an inductive element connected in parallel with the first capacitive element to form a parallel circuit that presents a stepped-up impedance to an output of the Active RF match network such that a voltage required to drive the plasma chamber load is reduced; and (3) a second capacitive element coupled to the parallel circuit and adapted to couple to the plasma chamber load. The second capacitive element reduces or cancels at least in part a reactance corresponding to an inductance associated with the plasma chamber load. Numerous other aspects are provided.

Abstract: Disclosed is a charge neutralizing device which is capable of being applied to a substrate 13 having a large area and in which electrons having low energy of 5 eV or less, and preferably 2 eV, are supplied so that charge due to ion implantation and damage by the electrons are avoided with respect to a cusp device. The charge neutralizing device includes a microwave generating unit, a plasma generating unit that generates electron plasma using a microwave generated from the microwave generating unit, and a contact unit that brings the electron plasma generated from the plasma generating unit into contact with a beam plasma region including an ion beam.

Abstract: A plasma processing system including a plasma chamber (120) having a substrate holder (128) and a monitoring system (130). The monitoring system (130) includes a microwave mirror (140) having a concave surface (142) located opposite the holder (128) and a power source (160) is coupled thereto that produces a microwave signal perpendicular to a wafer plane (129) of the holder (128). A detector (170) is coupled to the mirror (140) and measures a vacuum resonance voltage of the signal within the chamber (120). A control system (180) is provided that measures a first voltage during a vacuum condition and a second voltage during a plasma condition and determines an electron density from a difference between the second voltage and the first voltage. The processing system (110) can include a plurality of monitoring systems (130a, 130b, 130c) having mirrors (140a, 140b, 140c) provided in a spatial array located opposite the substrate holder (128).

Abstract: The invention is directed to an arrangement for the generation of short-wavelength radiation based on a hot plasma generated by gas discharge and to a method for the production of coolant-carrying electrode housings. It is the object of the invention to find a novel possibility for gas discharge based short-wavelength radiation sources with high average radiation output in quasi-continuous discharge operation by which efficient cooling principles can be implemented using inexpensive and simple means in order to prevent a temporary melting of the electrode surfaces and, therefore, to ensure a long lifetime of the electrodes. According to the invention, this object is met in that special cooling channels for circulating coolant are integrated in electrode collars of the electrode housings.

Abstract: An inductively coupling plasma source having a primary winding powered directly from a radio frequency source and a quasi-closed O-type ferrite core comprised of two equal U-shaped core halves separated from one another to form two operating gaps between aligned spaced ends of the core halves with the quasi-closed ferrite core disposed in the primary winding. A metallic housing is provided having a discharge chamber therein and two opposed walls with symmetrically opposed bone-shaped ports, wherein the ports are closed and vacuum sealed with insulating material and each is provided with two side openings dimensionally respectively fitted to and engaged with the spaced ends of the quasi-closed ferrite core, and a through slot connecting the side openings along their centerline for inductive excitation and maintenance of plasma in the operating gaps positioned within the discharged chamber.

Abstract: A plasma reactor including a plasma generating electrode which includes a plurality of unit electrodes hierarchically layered at specific intervals, a casing in which the plasma generating electrode is disposed, and a power supply which applies a voltage to the unit electrodes, generating plasma in a space formed between the unit electrodes by applying a pulse voltage between the unit electrodes from the power supply, and capable of processing exhaust gas introduced into the space through reaction, the plasma reactor further including a light-transmitting section formed in the casing for externally detecting light emitted by the plasma, light detection means capable of detecting light emitted by the plasma through the light-transmitting section, and control means for controlling electric energy applied to the unit electrodes depending on intensity of light detected by the light detection means.

Abstract: An electron generating device extracts electrons, through an electron sheath, from plasma produced using RF fields. The electron sheath is located near a grounded ring at one end of a negatively biased conducting surface, which is normally a cylinder. Extracted electrons pass through the grounded ring in the presence of a steady state axial magnetic field. Sufficiently large magnetic fields and/or RF power into the plasma allow for helicon plasma generation. The ion loss area is sufficiently large compared to the electron loss area to allow for total non-ambipolar extraction of all electrons leaving the plasma. Voids in the negatively-biased conducting surface allow the time-varying magnetic fields provided by the antenna to inductively couple to the plasma within the conducting surface. The conducting surface acts as a Faraday shield, which reduces any time-varying electric fields from entering the conductive surface, i.e. blocks capacitive coupling between the antenna and the plasma.

Abstract: A confinement ring assembly of a plasma treatment apparatus includes a cam ring disposed above the process chamber, a plurality of plungers disposed about a process chamber of the apparatus and operated by the cam ring, and a plurality of confinement rings coupled to the plungers. The plasma rings surround a plasma processing space in the process chamber. Each of the plungers includes a rod, a bearing block to which the rod is fixed and engaged with the cam ring such that the rod is moved up or down when the cam ring is rotated, a cylinder through which the rod extends, and a bushing fixed to the bottom of the cylinder. The confinement rings include an upper confinement ring fitted to the bushing of each of the plungers, and at least one lower confinement ring coupled to a lower end of the rod of each of the plungers. At least one lower confinement ring has an inner peripheral portion that extends upwardly to form a vertically extending inner wall.

Abstract: Broadband output high power pulsed flash lamps are useful in many applications, and when specifically optimized, can become an excellent source of ultraviolet (UV) light, which is particularly useful for photo-chemically-induced materials processing applications. Multiple factors involved with the production of high-energy light pulses can in certain cases adversely affect the ultraviolet lamp operation, thereby resulting in the development of micro cracks in lamp envelopes and subsequent limitation in lamp lifetime. Similar factors can be responsible for an increased absorption of UV radiation by lamp components and degradation of lamp efficiency. This invention describes new pulsed flash lamp designs that enable a new generation of high power and performance as required by, for example, many large-scale photo-processing applications.

Abstract: This invention features a combined radio frequency (RF) and Hall Effect ion source and plasma accelerator system including a plasma accelerator having an anode and a discharge zone, the plasma accelerator for providing plasma discharge. A gas distributor introduces a gas into the plasma accelerator. A cathode emits electrons attracted to the anode for ionizing the gas and neutralizing ion flux emitted from the plasma accelerator. An electrical circuit coupled between the anode and the cathode having a DC power source provides DC voltage. A magnetic circuit structure including a magnetic field source establishes a transverse magnetic field in the plasma accelerator that creates an impedance to the flow of the electrons toward the anode to enhance ionization of the gas to create plasma and which in combination with the electric circuit establishes an axial electric field in the plasma accelerator.

Abstract: A pair of plasma beam sources are connected across an AC power supply to alternatively produce an ion beam for depositing material on a substrate transported past the ion beams. Each plasma beam source includes a discharge cavity having a first width and a nozzle extending outwardly therefrom to emit the ion beam. The aperture or outlet of the nozzle has a second width, which second width is less than the first width. An ionizable gas is introduced to the discharge cavity. At least one electrode connected to the AC power supply, alternatively serving as an anode or a cathode, is capable of supporting at least one magnetron discharge region within the discharge cavity when serving as a cathode electrode. A plurality of magnets generally facing one another, are disposed adjacent each discharge cavity to create a magnetic field null region within the discharge cavity.

Abstract: An apparatus and method of use for injection, confinement, neutralization, acceleration and compression of an ion field using a solenoid having an axis of symmetry and supported within a vacuum space. A pair of magnetizable elements are positioned initially in spaced apart positions within the solenoid and after the solenoid is filled with ions from an ion source, the magnetizable elements are brought into close proximity to compress the ion field and accelerate its ions.

Abstract: An object of the present invention is to provide an apparatus for producing stable plasma. Another object of the present invention is to provide an apparatus having a long-lasting cathode electrode which is superior in field emission characteristic since the plasma density has to be raised in order to increase the throughput. The structure of the plasma producing apparatus of the present invention relates to a plasma producing apparatus with a plasma chamber surrounded by walls to make material gas into plasma, characterized in the plasma chamber has a cathode electrode, an anode electrode, means for introducing the material gas, and exhaust means, and that a carbon nano tube is formed on a surface of the cathode electrode and the anode electrode is formed on the surface of the cathode electrode.

Abstract: A confinement assembly for a semiconductor processing chamber is provided. The confinement assembly includes a plurality of confinement rings disposed over each other. Each of the plurality of confinement rings are separated by a space and each of the plurality of confinement rings have a plurality of holes defined therein. A plunger extending through aligned holes of corresponding confinement rings is provided. The plunger is moveable in a plane substantially orthogonal to the confinement rings. A proportional adjustment support is affixed to the plunger. The proportional adjustment support is configured to support the confinement rings, such that as the plunger moves in the plane, the space separating each of the plurality of confinement rings is proportionally adjusted. In one embodiment the proportional adjustment support is a bellows sleeve. A semiconductor processing chamber and a method for confining a plasma in an etch chamber having a plurality of confinement rings are provided.

Abstract: The invention concerns a method for generating a cold plasma for sterilizing a gaseous medium and a device therefor. The inventive device comprises a confinement chamber (1) including at least one treatment chamber (40), means (4) for generating a first uniform magnetic field (B1), means (5) for generating a second uniform magnetic field (B32), means (6, 7) for emitting an electromagnetic signal (EM1), means (9, 10) for generating one or several second electromagnetic fields (E2) in the plasma and a powering system (14) controlling the value of the first and second magnetic fields (B1, B2) and the frequency and the amplitude of the alternating current voltages (V6, V7).

Abstract: A plasma source which includes a discharge cavity having a first width, where that discharge cavity includes a top portion, a wall portion, and a nozzle disposed on the top portion and extending outwardly therefrom, where the nozzle is formed to include an aperture extending through the top portion and into the discharge cavity, wherein the aperture has a second width, where the second width is less than the first width. The plasma source further includes a power supply, a conduit disposed in the discharge cavity for introducing an ionizable gas therein, and at least one cathode electrode connected to the power supply, where that cathode electrode is capable of supporting at least one magnetron discharge region within the discharge cavity. The plasma source further includes a plurality of magnets disposed adjacent the wall portion, where that plurality of magnets create a null magnetic field point within the discharge cavity.

Abstract: A capacitive plasma source for iPVD is immersed in a strong local magnetic field, and maybe a drop-in replacement for an inductively coupled plasma (ICP) source for iPVD. The source includes an annular electrode having a magnet pack behind it that includes a surface magnet generally parallel to the electrode surface with a magnetic field extending radially over the electrode surface. Side magnets, such as inner and outer annular ring magnets, have polar axes that intersect the electrode with poles closest to the electrode of the same polarity as the adjacent pole of the surface magnet. A ferromagnetic back plate or back magnet interconnects the back poles of the side magnets. A ferromagnetic shield behind the magnet pack confines the field away from the iPVD material source.

Abstract: A device of a plasma (5) for confinement of a plasma within a housing (1), comprising creation means for creating a magnetic field, said means being a series of permanent magnets (3) for creation of a magnetic field presenting an alternating multi-polar magnetic structure to the plasma and the magnets (3) restrict the plasma to a large volume, the magnets begin distributed in a discontinuous around the volume end said magnets (3) arc discharge, a distance within the housing at a separation from the walls of the housing by means of support shafts (4). The changes above have been provided to improve the clarification of the claim language and claims have been amended to correct a typographical error. Since the changes are minor and are intended merely to improve the legibility of the claims, obtaining authorization from application was not viewed as necessary.

Abstract: A plasma accelerating apparatus and a plasma processing system having the same are provided. The apparatus includes a circular channel comprising an inner wall, an outer wall, and an end wall connected to an end of the inner wall and the outer wall to form an outlet port at the other ends of the inner and outer walls; a gas supply portion to supply a gas to an inside of the channel; and a plasma generating and accelerating portion to supply ionization energy to the gas inside the channel to generate a plasma beam, and to accelerate the generated plasma beam toward the outlet port, wherein one of the inner wall and outer wall of the channel is inclined at an angle so that the other end of the wall is located closer to a center of the plasma accelerating apparatus.

Abstract: A method for operating a semiconductor processing apparatus that plasma-processes a semiconductor wafer mounted on a stage placed in a container using a plasma generated therein. The method includes setting a temperature of the semiconductor wafer, and controlling an operation of the semiconductor processing apparatus based on information about the temperature of the semiconductor wafer which is set.

Abstract: Provided is an apparatus for fabricating a semiconductor device using plasma, whereby a semiconductor device fabricating process using plasma provides significantly greater uniformity. The apparatus includes a process chamber, a first electrode through which a radio frequency (RF) power is supplied into the process chamber, a second electrode having a semiconductor substrate placed thereon, wherein the second electrode is disposed in the process chamber to face the first electrode and generates plasma used in fabricating a semiconductor device on the semiconductor substrate using the RF power, and a confinement ring assembly disposed between the first electrode and the second electrode, including a first confinement ring that moves in the vertical direction and a second confinement ring that surrounds the first confinement ring and moves in the vertical direction.

Abstract: A plasma processing device is able to positively enhance a process-gas exhaust efficiency in a processing region and restrict plasma leaking. A processing container of a magnetron type parallel plate plasma processing device has a separator for separating the inside of the processing container into a processing region and an exhaust region. The separator has a plurality of gas passage holes to establish communication between the processing region and the exhaust region, and consists of a non-conductive member. A conductive member is disposed on a gas passage-side surface facing the gas passage holes. A voltage V is applied by a power supply to the conductive member so that the gas passage-side surface is at a potential higher than that of a processing-region surface.

Abstract: Methods and apparatus for generating strongly-ionized plasmas are disclosed. A strongly-ionized plasma generator according to one embodiment includes a chamber for confining a feed gas. An anode and a cathode assembly are positioned inside the chamber. A pulsed power supply is electrically connected between the anode and the cathode assembly. The pulsed power supply generates a multi-stage voltage pulse that includes a low-power stage with a first peak voltage having a magnitude and a rise time that is sufficient to generate a weakly-ionized plasma from the feed gas. The multi-stage voltage pulse also includes a transient stage with a second peak voltage having a magnitude and a rise time that is sufficient to shift an electron energy distribution in the weakly-ionized plasma to higher energies that increase an ionization rate which results in a rapid increase in electron density and a formation of a strongly-ionized plasma.

Abstract: A device for producing inductively coupled plasma and method thereof, wherein a coil is uniformly and dispersedly arranged on a lateral wall in a chamber, instead of the prior device of a permanent magnet mounted on an external wall of the chamber, and the coil is so disposed as to allow a magnetic field formed from the coil to be mutually reinforced at a central portion of the coil, such that charged particles created inside the chamber are effectively isolated relative to the lateral wall of the chamber, thereby enabling to produce plasmas of high density and high uniformity. Intensity and frequency of power source applied to the coil are adjusted to enable to adjust the density and uniformity of plasmas produced in the chamber according to required process characteristics in etching or depositing process using plasmas such that flexibility is provided to the process using the plasmas and design of new process can be free from restriction calling for process chamber configure.

Abstract: A capacitive plasma source for iPVD is immersed in a strong local magnetic field, and may be a drop-in replacement for an inductively coupled plasma (ICP) source for iPVD. The source includes an annular electrode having a magnet pack behind it that includes a surface magnet generally parallel to the electrode surface with a magnetic field extending radially over the electrode surface. Side magnets, such as inner and outer annular ring magnets, have polar axes that intersect the electrode with poles closest to the electrode of the same polarity as the adjacent pole of the surface magnet. A ferromagnetic back plate or back magnet interconnects the back poles of the side magnets. A ferromagnetic shield behind the magnet pack confines the field away from the iPVD material source.

Abstract: The present invention discloses a device for measuring and monitoring electron density of plasma. The device includes a chamber filled with plasma having varying electron density; a frequency probe having transmission/receiving antennas and a pair of waveguides, one end of which is mounted in the chamber, for radiating and receiving electromagnetic waves; an electromagnetic wave generator electrically connected to one of the waveguides of the frequency probe for generating electromagnetic waves; and a frequency analyzer for scanning the frequency of received electromagnetic waves and analyzing the scanned frequency with respect to the amplitude of the received electromagnetic waves. Coupled to the rear end of the frequency probe is preferably a transfer unit having a hydraulic cylinder structure such that the frequency probe is moved in the chamber to detect the spatial distribution of electron density.

Abstract: An object of the present invention is to provide an apparatus for producing stable plasma. Another object of the present invention is to provide an apparatus having a long-lasting cathode electrode which is superior in field emission characteristic since the plasma density has to be raised in order to increase the throughput. The structure of the plasma producing apparatus of the present invention relates to a plasma producing apparatus with a plasma chamber surrounded by walls to make material gas into plasma, characterized in the plasma chamber has a cathode electrode, an anode electrode, means for introducing the material gas, and exhaust means, and that a carbon nano tube is formed on a surface of the cathode electrode and the anode electrode is formed on the surface of the cathode electrode.

Abstract: A dipole ion source (FIG. 1) includes two cathode surfaces, a substrate (1) and a pole (3); wherein a gap is defined between the substrate and the pole; an unsymmetrical mirror magnetic field including a compressed end, wherein the substrate is positioned in the less compressed end of the magnetic field; and an anode (4) creating an electric field penetrating the magnetic field and confining electrons in a continuous Hall current loop, wherein the unsymmetrical magnetic field serves an ion beam on the substrate.

Abstract: A composition of a plasma display panel (PDP) is disclosed. In order to effectively reduce a jitter, the composition contains a ferroelectric transparent ceramics material.

Abstract: Plasma discharge sources for generating emissions in the VUV, EUV and X-ray spectral regions. Embodiments can include running a current through liquid jet streams within space to initiate plasma discharges. Additional embodiments can include liquid droplets within the space to initiate plasma discharges. One embodiment can form a substantially cylindrical plasma sheath. Another embodiment can form a substantially conical plasma sheath. Another embodiment can form bright spherical light emission from a cross-over of linear expanding plasmas. All the embodiments can generate light emitting plasmas within a space by applying voltage to electrodes adjacent to the space. All the radiative emissions are characteristic of the materials comprising the liquid jet streams or liquid droplets.

Abstract: A high efficiency plasma pump for use in a plasma processing system that includes a plasma processing device having a first plasma density proximate a processing region and a second plasma density proximate an exit region is disclosed. The plasma pump includes an inter-stage plasma (ISP) source fluidly coupled to the plasma processing device proximate the exit region, the ISP source comprising an inter-stage plasma region having a third plasma density; and a plasma pump fluidly coupled to the ISP, the plasma pump having a fourth plasma density, wherein pumping speed is dependent upon the third plasma density and the fourth plasma density. The ISP source increasing the third plasma density to increase the pumping efficiency.

Abstract: An electron beam device wherein a low temperature gaseous plasma is generated in a chamber divided by two parallel wire grids. A semiconductor wafer serves as a cathode drawing ions from the plasma to impinge on the wafer, generating secondary electrons that are accelerated toward an anode on the opposite side of the grids where a target resides. In order to have a beam with uniform cross-sectional flux characteristics, the semiconductor wafer is doped with a graded dopant concentration that promotes a uniform beam.

Abstract: With the object of suppressing dispersion in the dose of ion implantation within a narrow range in a direction orthogonal to the scan direction of a substrate, an ion doping apparatus irradiates the substrate to-be-scanned with ion beams which are drawn out from multi-apertured electrodes (200 in FIG. 2) each being provided with a large number of electrode apertures (210). In electrode aperture groups ?, . . . of the multi-apertured electrode (200), each including a plurality of electrode apertures (210), the individual electrode apertures (210) are arranged having positional shifts in the direction Y orthogonal to the scan direction X of the substrate so as to homogenize the doses of ion beam implantations into the substrate by the electrode aperture groups ?, . . . .

Abstract: An apparatus for producing a stable, high pressure plasma column with long length, and high axial uniformity. Rotating a gas-filled tube about an horizontal axis creates a vortex with minimal, or no shear flow. Such a vortex provides a stable equilibrium for a central column of high temperature gas and plasma when, for a given rotation speed, the centrifugal force dominates over the gravitational force inside the smallest radial dimension of the containment envelope. For gas pressures sufficiently high that the particle mean free path is short compared with the thickness of the gas layer between the central plasma column and the wall, thermal transport across this sheath layer is small and its temperature is low. High pressure discharges inside a rotating envelope may be sustained by a variety of means, including electrical, electromagnetic and chemical; they may find application in plasma torches, light sources, etc.

Abstract: A plasma processing apparatus of the present invention includes a matching circuit for impedance matching between a radio-frequency generator and a plasma processing chamber, and one or a plurality of impedance converting circuits provided between the matching circuit and the radio-frequency generator. The impedance converting circuit converts an impedance to decrease a difference in impedance to be matched by the matching circuit, thereby decreasing a change in the output impedance with a moving amount of a capacitance control of one of variable passive elements of the matching circuit, such as a load capacitor and a tuning capacitor. Therefore, a change in the impedance of the plasma processing chamber can be finely controlled.

Abstract: A confinement ring coupling arrangement for coupling, in a plasma processing chamber, a confinement ring to a plunger. The plunger is configured to move the confinement ring to deploy and stow the confinement ring to facilitate processing of a substrate within the plasma processing chamber. The confinement ring coupling arrangement includes a hanger adapter having a locking head, the hanger adapter being configured to be coupled with the plunger. The confinement ring coupling arrangement further includes a hanging bore disposed in the confinement ring and configured to receive the locking head and to secure the locking head within the hanging bore during stowing and deployment of the confinement ring, wherein a diameter of the locking head is sufficiently smaller than a cross-section dimension of the hanging bore to prevent a sidewall of the locking head from scraping against a sidewall of the hanging bore during the stowing and deployment of the confinement ring.

Abstract: A confinement ring support assembly for coupling together a plurality of confinement rings in a plasma processing chamber. The confinement ring support assembly includes a post having first end and a second end. The post further includes a first lip having an associated first sliding surface, and a second lip having an associated second sliding surface. The first lip is disposed at a first position on the post, the second lip being disposed at a second position at a different arc relative to the first location on the post, the second position being disposed between the first position and the first end along a longitudinal axis of the post. The confinement ring support assembly further includes a first washer configured to move slidably from the first lip past the second lip toward the first end of the post.

Abstract: In laser-plasma generation, a fluid of target material is jet out to form a jet tube target 21 having a diameter ? and a wall thickness ? with a shell and a hollow space within the shell by using a core-column. A plurality of pulse-like laser beams 30 are directed to the jet tube target radially and equiangularly-spaced directions and are simultaneously focused and irradiated onto the jet tube target to generate the plasma.

Abstract: A plasma processing system having a grounded chamber and an RF power feed connected to a bottom electrode is tested. A first capacitance between the bottom electrode and the grounded chamber is measured at atmosphere. Consumable hardware parts are installed in the chamber. A second capacitance between the bottom electrode and the grounded chamber is measured at vacuum with the grounded chamber including all of the installed consumable hardware parts. The first capacitance measurement and the second capacitance measurement are respectively compared with a first reference value and a second reference value to identify and determine any defects in the plasma processing system. The first and second reference value respectively are representative of the capacitance of a defect-free chamber at atmosphere and the capacitance of a defect-free chamber including all of the installed consumable hardware parts at vacuum.

Abstract: The preferred embodiments described herein provide a magnetic mirror plasma source. While the traditional magnetic/electrostatic confinement method is ideal for many applications, some processes are not best served with this arrangement. The preferred embodiments described herein present a new technique to confine electrons (3) to produce a low pressure, dense plasma directly on a substrate surface (75). With these preferred embodiments, a combination of electrostatic and mirror magnetic confinement is implemented. The result is a novel plasma source that has unique and important advantages enabling advancements in PECVD, etching, and plasma treatment processes.

Abstract: An rf ion source suitable for low power operation over a range of pressures in air which comprises discharge electrode, a cathode and an anode, the cathode being connected to an rf signal supply through an associated coupling means and the anode adapted to provide a surface area over which a plasma discharge may occur no greater than substantially that of the cathodal area over which the discharge may occur. The anode and cathode are arranged to be maneuverable with respect to one another in order to reduce the power requirements of the system and provide a means of controlling the rf discharge and ionization. An extended rf ion source, comprising a series of electrode pairs, provides flexibility for use in a variety of circumstances.

Abstract: Methods and apparatus for generating uniformly-distributed plasma are described. A plasma generator according to the invention includes a cathode assembly that is positioned adjacent to an anode and forming a gap there between. A gas source supplies a volume of feed gas and/or a volume of excited atoms to the gap between the cathode assembly and the anode. A power supply generates an electric field across the gap between the cathode assembly and the anode. The electric field ionizes the volume of feed gas and/or the volume of excited atoms that is supplied to the gap, thereby creating a plasma in the gap.

Abstract: An apparatus and process for enhancing the ignition of a gas to form a plasma in a plasma tool. The apparatus and process includes the use of a plasma tube to locally enhance the applied electric field so that plasma can be initiated at higher pressures, at lower electric fields, and/or in otherwise difficult gases to ignite. The plasma tube includes at least one conductive fiber secured to the tube. A process for enhancing the local electric field includes coupling the plasma tube to an energy source such as microwave energy, radiofrequency energy, or a combination comprising at least one of the foregoing energy sources.

Abstract: The present invention provides a magnetic neutral line plasma discharge processing system that makes it no longer necessary to use an insulator wall in the vacuum chamber and metal such as stainless steel may alternatively be used, while maintaining the features including both time/space and space controllability relative to the size and the location of low pressure, low temperature and high density plasma to be generated. Thus, the cost of the system can be reduced remarkably. As a result, the scope of application of discharge plasma systems can be broadened.

Abstract: The invention is directed to a radiation source for generating extreme ultraviolet (EUV) radiation, particularly for photolithography exposure processes. The object of the invention is to find a novel possibility for realizing radiation sources for generating extreme ultraviolet (EUV) radiation which permits a uniform basic construction for ensuring beam characteristics that are reproducible over the long term and in which the source is conceived so as to be flexible with respect to specific applications.

Abstract: A stand-alone plasma vacuum pump for pumping gas from a low-pressure inlet to a high-pressure outlet, composed of: a housing enclosing one or more pumping regions located between the inlet and the outlet; a plurality of permanent magnet assemblies providing magnetic fields that extend in the pumping region between the inlet and the outlet, the magnetic field forming magnetic flux channels for guiding and confining plasmas; elements disposed for coupling microwave power into the flux channels to heat electrons, ionize gas, and accelerate plasma ions in a direction from the inlet to the outlet; elements disposed for creating an electric in the magnetic flux channels to accelerate ions in the flux channels toward the outlet by momentum transfer; and a differential conductance baffle proximate to the outlet for promoting flow of plasma ions and neutral atoms to the outlet.

Abstract: A method tests a plasma processing system having a chamber, an RF power source, and a matching network. An RF power signal is generated from the RF power source to the chamber without igniting any plasma within the chamber. The voltage of the RF power signal, the current of the RF power signal, and the phase of the RF power signal, received by the chamber is measured while holding other parameters affecting the chamber constant. A value representative of an impedance of the chamber is computed based on the voltage, the current, and the phase. The value is then compared with a reference value to determine any defects in the plasma processing system. The reference value is representative of the impedance of a defect-free chamber.

Abstract: A source electrode is biased to lower the potential barrier of surface electrons. A laser radiates the source electrode, producing a tunneling electron current. The tunneling electron current oscillates in response to frequency of the laser. The impedance match circuit couples the current from a high-impedance source electrode of a laser-assisted field emission to a lower-impedance connector, creating a high-frequency microwave signal source. Two or more lasers may be photomixed to further tune the frequency of the microwave signal.

Abstract: A plasma in a vacuum chamber where a workpiece is processed is bounded by a plasma confinement volume including a region between a first electrode simultaneously responsive to power at first and second RF frequencies and a DC grounded second electrode. A DC grounded extension is substantially aligned with the first electrode. A substantial percentage of power at the first frequency is coupled to a path including the first and second electrodes but not the extension while a substantial percentage of power at the second frequency is coupled to a path including the first electrodes and extension, but not the second electrode. Changing the relative powers at the first and second frequencies, as applied to the first electrode, controls DC bias voltage of the first electrode.

Abstract: An electron beam device wherein a low temperature gaseous plasma is generated in a chamber divided by two parallel wire grids. A semiconductor wafer serves as a cathode drawing ions from the plasma to impinge on the wafer, generating secondary electrons that are accelerated toward an anode on the opposite side of the grids where a target resides. In order to have a beam with uniform cross-sectional flux characteristics, the semiconductor wafer is doped with a graded dopant concentration that promotes a uniform beam.