Abstract: The invention concerns a device for producing and/or confining a plasma (10), comprising a recipient (13) within the volume of which the plasma is produced or confined, wherein said recipient comprises a wall (1) defining a lining (15) at the inside of the recipient and encompassing the volume, characterized in that it comprises at least one annular magnet (30), centered around a normal (14) with respect to the lining, having radial magnetization direction, such that the magnetization direction is significantly perpendicular to said normal to the lining. The invention also concerns a method for producing and/or confining a plasma.

Abstract: Systems, methods, and Apparatus for controlling the spatial distribution of a plasma in a processing chamber are disclosed. An exemplary system includes a primary inductor disposed to excite the plasma when power is actively applied to the primary inductor; at least one secondary inductor located in proximity to the primary inductor such that substantially all current that passes through the secondary inductor results from mutual inductance through the plasma with the primary inductor. In addition, at least one terminating element is coupled to the at least one secondary inductor, the at least one terminating element affecting the current through the at least one secondary inductor so as to affect the spatial distribution of the plasma.

Abstract: The microwave plasma generator is applied to transmission of electromagnetic field into plasma. The invention consists of the fact that the guiding part (3) has two outputs (4, 4?) between which an input (2) of microwave is placed generated from the microwave power source (5). The input (2) is in the distance (A) from the separation (10) of the first output (4) and in the distance (B) from the separation (10?) of the second output (4?) while the absolute value of the difference of the distances A-B or B-A equals ?/2 where ? is the wave length of the microwave and distances A and B correspond to the trajectory of microwave propagation. A microwave plasma generator including microwave power source (magnetron) (5) is connected to the input (2) of the guiding part (3) of the applicator (1).

Abstract: A method of accelerating charged particles using a laser pulse fired through a plasma channel contained in a capillary, wherein the plasma waveguide has deviations along its length that cause deviations in the plasma density contained therein, the deviations in plasma density acting to promote charged particle injection into a wake of a passing laser pulse. A radiation source based on a laser-driven plasma accelerator in a plasma waveguide in which the plasma waveguide and/or laser injection process is/are controlled so as to produce an undulating path for the laser pulse through the waveguide, the undulation exerting a periodic transverse force on charged particles being accelerated in the wake of the laser pulse, the resulting charged particle motion causing controlled emission of high frequency radiation pulses.

Abstract: Embodiments of the present invention generally provide methods and apparatus for pulsed plasma processing over a wide process window. In some embodiments, an apparatus may include an RF power supply having frequency tuning and a matching network coupled to the RF power supply that share a common sensor for reading reflected RF power reflected back to the RF power supply. In some embodiments, an apparatus may include an RF power supply having frequency tuning and a matching network coupled to the RF power supply that share a common sensor for reading reflected RF power reflected back to the RF power supply and a common controller for tuning each of the RF power supply and the matching network.

Abstract: A plasma interaction simulator is presented. The simulator magnetically induces multiple distinct flows of plasma within a physical plasma vessel. The plasma flows collide with each other at flow interaction boundaries where discontinuities arising due to differences between the flows give rise to interactions. Sensors can be incorporated into the plasma simulator to observe and collect data about the plasma flow interactions.

Abstract: There is provided a plasma processing apparatus including a plasma generating unit for generating a plasma in a processing chamber in which a set processing is performed on a substrate serving as an object to be processed. The plasma processing apparatus further includes a particle moving unit for electrostatically driving particles in a region above the substrate to be removed out of the region above the substrate in the processing chamber while the processing on the substrate is performed by using the plasma. In addition, there is provided a plasma processing method of a plasma processing apparatus including the steps of generating plasma in a processing chamber in which a set processing is performed on a substrate serving as an object to be processed; and performing the processing on the substrate by the plasma.

Abstract: A pulse plasma matching system includes an RF matching box configured to receive an RF power pulse generated by an RF power source, configured to perform a plasma impedance matching, and configured to apply the RF power pulse to a process chamber, and a network analyzer configured to measure an impedance of plasma generated in a process chamber. A controller is configured to generate a capacitance control signal corresponding to a plasma impedance value measured by the network analyzer, configured to supply the capacitance control signal to the RF matching box, and configured to generate an impedance matching compensation pulse, and a phase shifter is configured to receive the impedance matching compensation pulse and to shift a phase of the impedance matching compensation pulse to synchronize the impedance matching compensation pulse to the RF power pulse.

Abstract: A plasma-generation device with electron cyclotron resonance, includes two adjacent sealed vacuum chambers configured to contain plasmas, an injector configured to inject a high-frequency wave into the chambers, a magnetic structure to generate a magnetic field in the chambers including a plurality of parallelepipedal permanent magnets and generating at least two plasmas according to the magnetic field lines, the module of the magnetic field having a magnetic mirror configuration with at least one electron cyclotron resonance area per plasma, the magnetic structure including at least one permanent magnet contributing to the formation of a plasma in each one of the chambers, such that the chambers share the same at least one permanent magnet on the common wall thereof.

Abstract: A pair of coaxial electrodes 10 that face each other, a discharge-environment-maintaining device 20, and a voltage-applying device 30 are provided. Each coaxial electrode 10 includes a center electrode 12, a guide electrode 14 which surrounds the front end portion of the facing center electrode, and an insulation member 16 which insulates the center electrode and the guide electrode from each other. The insulation member 16 is formed of partially porous ceramics including an insulative dense portion 16a and a porous portion 16b. The insulative dense portion 16a includes a reservoir 18 which holds a plasma medium therein, and by the porous portion 16b, the inner surface of the reservoir 18 communicates with a gap between the center electrode 12 and the guide electrode 14 through the inside of the insulative dense portion 16a.

Abstract: A method is provided for operating a processing system having a space therein arranged to receive a gas and an electromagnetic field generating portion operable to generate an electromagnetic field within the space. The method includes providing a gas into the space, and operating the electromagnetic field generating portion with a driving potential to generate an electromagnetic field within the space to transform at least a portion of the gas into plasma. The driving potential as a function of time is based on a first potential function portion and a second potential function portion. The first potential function portion comprises a first continuous periodic portion having a first amplitude and a first frequency. The second potential function portion comprises a second periodic portion having an maximum amplitude portion, and minimum amplitude portion and a duty cycle. The maximum amplitude portion is a higher amplitude than the minimum amplitude portion.

Abstract: The control of a plasma display panel, successively comprises, at least for all the cells of a current line having to switch state for the next line: a connection of a terminal of application of an intermediary supply voltage to output terminals of column control stages corresponding to the junction points of first and second switches between two terminals of application of a supply voltage, to perform a precharge or a predischarge of the screen cells; a disconnection of said output terminals from this intermediary voltage; and a connection of each output terminal to a first or to a second power supply voltage by the turning-on of the first or second switch of the corresponding stage, according to a luminance reference value, delayed with respect to the disconnection of the corresponding output terminal from the terminal of application of the intermediary voltage.

Abstract: Provided are an electrode device and an apparatus for generating plasma.

Abstract: Methods and apparatus for generating strongly-ionized plasmas are disclosed. A strongly-ionized plasma generator according to one embodiment includes a chamber for confining a feed gas. An anode and a cathode assembly are positioned inside the chamber. A pulsed power supply is electrically connected between the anode and the cathode assembly. The pulsed power supply generates a multi-stage voltage pulse that includes a low-power stage with a first peak voltage having a magnitude and a rise time that is sufficient to generate a weakly-ionized plasma from the feed gas. The multi-stage voltage pulse also includes a transient stage with a second peak voltage having a magnitude and a rise time that is sufficient to shift an electron energy distribution in the weakly-ionized plasma to higher energies that increase an ionization rate which results in a rapid increase in electron density and a formation of a strongly-ionized plasma.

Abstract: Disclosed is an atmospheric pressure plasma apparatus for enhancing and or controlling the dissociation of a secondary gas by converting a source gas into a plasma state at atmospheric pressure and controlling the interaction between that plasma and the secondary gas using porous metal, and ceramic tubes to create a path having controllable isolation from the region where plasma is generated.

Abstract: Described is an electrode-less plasma lamp comprising a gas-fill vessel, a gas-fill contained within the gas-fill vessel, an RF electromagnetic radiation source, an RF electromagnetic resonator, an output probe that couples RF energy from the RF electromagnetic resonator to the gas-fill vessel, an input probe that couples RF energy from the RF electromagnetic radiation source to the resonator, and a grounding strap that holds a metal veneer surrounding the resonator and a portion of the gas-fill vessel at RF ground. Also described are many variations of the electrode-less plasma lamp, non-limiting examples of which include embodiments that employ other probes in a Dielectric Resonant Oscillator to drive the lamp, a lamp employing more than one resonator per gas-fill vessel, and many methods of improving light-harvesting, including raising the gas-fill vessel away from the resonator via a coaxial transmission line, and collecting light with an optical reflector.

Abstract: An impedance matching device is provided with a basic element having variable characteristic parameters for impedance matching, and an auxiliary element having variable characteristic parameters. At the time of generating plasma by using the impedance matching device, the characteristic parameters of the basic element of each antenna element are fixed, respectively, and the characteristic parameters of the auxiliary element are adjusted for each antenna element. Thus, in an adjusted status where impedance matching for each antenna element is adjusted, each antenna element of an antenna array is fed with a high frequency signal, an electromagnetic wave is radiated from the antenna element, the characteristic parameters of the basic element of each antenna element are synchronized and adjusted, and the impedances of the whole antenna array are matched.

Abstract: A method for minimizing microwave leakage into processing chamber of a microwave plasma system is provided. The method includes securing plasma traps to a plasma tube assembly, which is a cylindrical structure positioned upstream from the processing chamber and has a plasma-sustaining region. The plasma traps are electrically conductive disks surrounding the cylindrical structure and are positioned upstream from the processing chamber. The plasma traps include at least two electrically conductive disks. Each electrically conductive disk includes corrugated outer surfaces with plurality of corrugated peaks. The corrugated outer surface of the first electrically conductive disk is facing a corrugated outer surface of the second electrically conductive disk in a space-apart relationship to form an interstitial region between the electrically conductive disks.

Abstract: A plasma light source includes a pair of coaxial electrodes 10 facing each other, a radiation environment sustaining device 20 that supplies a plasma medium into the insides of the coaxial electrodes and holds the coaxial electrodes at a temperature and a pressure suitable for plasma generation, and a voltage application device 30 that applies a discharge voltage of an inverted polarity to each of the coaxial electrodes. Tubular discharge 4 is formed between the pair of coaxial electrodes and plasma 3 is confined in an axial direction of the coaxial electrodes.

Abstract: An arc suppression arrangement suppresses arcs in a gas discharge device that is operated with an alternating voltage from a power supply. The arc suppression arrangement includes an arc suppression device and an arc identification device that controls the arc suppression device. The arc suppression device includes at least one controllable resistor that is connected in series in an electrical line that extends from an alternating voltage source to an electrode of the gas discharge device. An arc can thereby be prevented from being provided with energy.

Abstract: To sustain uniform generation of plasma constantly over a large area. In the surface wave excitation plasma processing device, a plasma source includes: a microwave generator, a microwave waveguide and a dielectric block; and a plasma source also includes: a microwave generator, a microwave waveguide and a dielectric block. The lid of a chamber is fixed onto the microwave waveguides in parallel, and the dielectric blocks disposed in the chamber. A reflecting plate is disposed between the dielectric blocks so that electromagnetic waves propagating through the dielectric blocks are prevented from advancing into the counterpart dielectric blocks as reflected waves. Consequently, the plasma sources are controlled independently. Furthermore, a side reflector is disposed at outer circumference of each of the dielectric blocks so that a standing waves of the electromagnetic waves propagating through the dielectric blocks is formed thus forming a large area standing wave mode of surface waves uniformly.

Abstract: The invention relates to a device for producing and/or confining a plasma (10), said device comprising a chamber (13) in the space of which the plasma is produced and/or confined, said chamber (13) including a wall (1) defining a housing (15) inside the chamber (15) and encompassing said space, wherein said device is characterised in that it comprises at least one assembly (30) for producing and/or confining plasma, each assembly (30) being composed of magnets (3) having only an axial magnetisation direction and being recessed in the wall (1) defining the housing, so that the magnetisation direction of all the magnets (3) defining each assembly (30) is substantially perpendicular to the housing (15) defined by the wall (1) and so that the assembly (30) is substantially symmetrical to the housing, wherein the magnetic field lines (5) do not extend through the wall (1) of the chamber. The invention also relates to a method for producing and/or confining a plasma.

Abstract: A method and apparatus are disclosed for plasma containment. A toroidal vacuum device is filled with the gas. Field coils generate a toroidal magnetic field. An ionizing device ionizes the gas into a plasma. A transformer inductively drives a toroidal first particle current about a toroidal axis that heats the plasma and generates a poloidal magnetic field. The field coils restrict the toroidal magnetic field to a boundary value. The poloidal magnetic field and the toroidal magnetic field motivate the first particles radially inward toward a toroidal axis, producing a radial electric field. The radial electric field, the poloidal magnetic field, and the toroidal magnetic field contain the plasma within the toroidal vacuum device in a minimum-energy state.

Abstract: A system and method for preventing formation of a plasma-inhibiting substance within a plasma chamber is provided. In one embodiment, an apparatus that includes a barrier component configured to be disposed within a plasma chamber. The barrier component includes a wall that defines a plasma formation region where a chemically-reducing species is formed from a fluid. A portion of the wall is formed of a substance that is substantially inert to the chemically-reducing species. The wall prevents the chemically-reducing species from interacting with an inner surface of the plasma chamber to form a conductive substance. The barrier component also includes an opening in fluid communication with the plasma formation region. The fluid is introduced into the plasma formation region via the opening.

Abstract: A magnetic mirror plasma source includes a gap separating a substrate from a cathode. A mirror magnetic field extends between the substrate and the cathode through the gap. The magnetic field lines at a proximal surface of the substrate are at least two times as strong as those field lines entering the cathode. An anode is disposed such that a closed loop electron Hall current containment region is formed within the magnetic field.

Abstract: A strongly-ionized plasma generator includes a chamber for confining a feed gas. An anode is positioned inside the chamber. A cathode assembly is positioned adjacent to the anode inside the chamber. An output of a pulsed power supply is electrically connected between the anode and the cathode assembly. The pulsed power supply comprising solid state switches that are controlled by micropulses generated by drivers. At least one of a pulse width and a duty cycle of the micropulses is varied so that the power supply generates a multi-step voltage waveform at the output having a low-power stage including a peak voltage and a rise time that is sufficient to generate a plasma from the feed gas and a transient stage including a peak voltage and a rise time that is sufficient to generate a more strongly-ionized plasma.

Abstract: The present invention pertains to RF (radio frequency) inductive coupling plasma (ICP) sources exciting and maintaining plasma within a closed and vacuum sealed discharge chamber filled with a gaseous medium at a controllable pressure in the range from 1 mTorr to atmospheric pressure. The inductively couple plasma source of the present invention includes a radio frequency source, a quasi-closed O-type solenoidal inductor comprised of two equal section U-shaped solenoid coil halves separated from one another to form two operating gaps between aligned spaced ends of the solenoid coil halves. Each of the U-shaped halves of the solenoid coil is sectioned to have an electrical midpoint connected to the radio frequency source and the distal outer ends of the solenoid coils, which correspond to the aforesaid aligned spaced ends of the quasi-closed solenoidal inductor, are connected to ground.

Abstract: An apparatus for controlling a plasma etching process includes plasma control structure that can vary a size of a plasma flow passage, vary a speed of plasma flowing through the plasma flow passage, vary plasma concentration flowing through the plasma flow passage, or a combination thereof.

Abstract: Plasma producing method and apparatus wherein a plurality of high-frequency antennas are arranged in a plasma producing chamber, and a high-frequency power supplied from a high-frequency power supply device (including a power source, a phase controller and the like) is applied to a gas in the chamber from the antennas to produce inductively coupled plasma. At least some of the plurality of high-frequency antennas are arranged in a fashion of such parallel arrangement that the antennas successively neighbor to each other and each of the antennas is opposed to the neighboring antenna. The high-frequency power supply device controls a phase of a high-frequency voltage applied to each antenna, and thereby controls an electron temperature of the inductively coupled plasma.

Abstract: A RF matching network is described, and which includes a 1st to nth RF generators, and wherein each RF generator has a different frequency, and wherein the frequencies of the 1st to the nth RF input ports decline in sequence, and wherein between the ith frequency RF input port, and the output port is a ith circuit, which has a high impedance at the output port to all RF generator frequencies other than the ith frequency; and wherein the ith circuit, when connected to a RF generator with the ith frequency, and wherein measuring from the output port to the ith circuit, the ith circuit has a first impedance at the ith frequency; and when measuring from the output port in the opposite direction to the ith circuit, the ith circuit has a second impedance at the ith frequency; and wherein the first impedance is a substantial conjugate match of the second impedance.

Abstract: A plasma reactor is provided, which includes a discharge chamber with dimensional characteristics and configuration of dielectric and electrodes so as to enhance efficiency based on the characteristics of the corona discharge streamers generated. Upon application of a pulsed high voltage potential, the discharge chamber enables formation of plasma where surface streamers play a greater role in the overall energy density of the discharge chamber than gas streamers. The formation of gas streamers is constrained. Because surface streamers have a higher energy density, the present invention is able to achieve improved energy efficiency while preserving effectiveness for gas treatment.

Abstract: A method and a device for artificially generating and showing an aurora and for generating and changing a true-to-life curtain-shaped discharge light emission by using a simple device. In a pressure-reduced chamber, two electrodes are arranged in the X direction and a third electrode is arranged in the Z direction in such a manner that the two electrodes oppose the third electrode and they are apart from each other. A coil generates a magnetic line of force in the Z direction.

Abstract: A patterned beam of radiation is projected onto a substrate. A reflective optical element is used to help form the radiation beam from radiation emitted from a plasma region of a plasma source. In the plasma source, a plasma current is generated in the plasma region. To reduce damage to the reflective optical element, a magnetic field is applied in the plasma region with at least a component directed along a direction of the plasma current. This axial magnetic field helps limit the collapse of the Z-pinch region of the plasma. By limiting the collapse, the number of fast ions emitted may be reduced.

Abstract: An ion source element, an ion implanter having the ion source element and a method of modifying the ion source element are provided. In the ion source element, a chamber may have a cavity divided into a plurality of inner sections configured substantially perpendicularly to an axis defined through centers of ends of the cavity. The larger inner sections may be at, or near, a center of the cavity and become smaller toward the ends of the cavity. A filament may be disposed at one end of the chamber to emit thermal electrons. A repeller may extend into the chamber through the other end of the chamber. An inlet may be formed in a first cavity wall to introduce gas having a dopant species into the chamber. A beam slit may be formed in a second cavity wall, opposite the inlet, of the chamber to extract an ionized species of the gas from the chamber.

Abstract: Methods and apparatus for generating strongly-ionized plasmas are disclosed. A strongly-ionized plasma generator according to one embodiment includes a chamber for confining a feed gas. An anode and a cathode assembly are positioned inside the chamber. A pulsed power supply is electrically connected between the anode and the cathode assembly. The pulsed power supply generates a multi-stage voltage pulse that includes a low-power stage with a first peak voltage having a magnitude and a rise time that is sufficient to generate a weakly-ionized plasma from the feed gas. The multi-stage voltage pulse also includes a transient stage with a second peak voltage having a magnitude and a rise time that is sufficient to shift an electron energy distribution in the weakly-ionized plasma to higher energies that increase an ionization rate which results in a rapid increase in electron density and a formation of a strongly-ionized plasma.

Abstract: An apparatus and method to generate plasma which can be applied to semiconductor processing. The apparatus includes a chamber having a plasma generating space defined therein, a lower electrode positioned within the chamber, an upper electrode facing the lower electrode and disposed within the chamber to constitute a first plasma generating source, a second plasma generating source positioned at a higher location than that of a lower surface of the upper electrode and disposed at an outer circumference of the upper electrode, and a power supply to supply power to the first and second plasma generating sources.

Abstract: An apparatus for producing light includes a chamber and an ignition source that ionizes a gas within the chamber. The apparatus also includes at least one laser that provides energy to the ionized gas within the chamber to produce a high brightness light. The laser can provide a substantially continuous amount of energy to the ionized gas to generate a substantially continuous high brightness light.

Abstract: An integrated capacitively-coupled and inductively-coupled device is provided for plasma etching that may be used as a primary or secondary source for generating a plasma to etch substrates. The device is practical for processing advanced semiconductor devices and integrated circuits that require uniform and dense plasma. The invention may be embodied in an apparatus that contains a substrate support, typically including an electrostatic chuck, that controls ion energy by capacitively coupling RF power to the plasma and generating voltage bias on the wafer relative to the plasma potential. An etching electrode is provided opposite the substrate support. An integrated inductive coupling element is provided at the perimeter of the etching electrode that increases plasma density at the perimeter of the wafer, compensating for the radial loss of charged particles toward chamber walls, to produce uniform plasma density above the processed wafer.

Abstract: Systems, methods, and Apparatus for controlling the spatial distribution of a plasma in a processing chamber are disclosed. An exemplary system includes a primary inductor disposed to excite the plasma when power is actively applied to the primary inductor; at least one secondary inductor located in proximity to the primary inductor such that substantially all current that passes through the secondary inductor results from mutual inductance through the plasma with the primary inductor. In addition, at least one terminating element is coupled to the at least one secondary inductor, the at least one terminating element affecting the current through the at least one secondary inductor so as to affect the spatial distribution of the plasma.

Abstract: An apparatus and method for containing plasma and forming a Field Reversed Configuration (FRC) magnetic topology are described in which plasma ions are contained magnetically in stable, non-adiabatic orbits in the FRC. Further, the electrons are contained electrostatically in a deep energy well, created by tuning an externally applied magnetic field. The simultaneous electrostatic confinement of electrons and magnetic confinement of ions avoids anomalous transport and facilitates classical containment of both electrons and ions. In this configuration, ions and electrons may have adequate density and temperature so that upon collisions ions are fused together by nuclear force, thus releasing fusion energy. Moreover, the fusion fuel plasmas that can be used with the present confinement system and method are not limited to neutronic fuels only, but also advantageously include advanced fuels.

Abstract: A pulse voltage is applied on a process gas to generate discharge plasma. The pulse voltage has a duty ratio controlled in a range of 0.001 percent or more and 8.0 percent or less. Preferably, the discharge plasma has an electron density of 1×1010 cm?3 or larger and an electron temperature of 1.5 eV or lower at a supplied power of 1.0 W/cm2 or more per a unit area of a discharge electrode.

Abstract: A plasma generating apparatus includes a plurality of discharge cells in which a gas is excited by a high frequency excitation signal produced at an inverter. Each of a plurality of transformers couples the excitation signal from the inverter to one of the discharge cells, thereby forming a separate resonant circuit that has a resonant frequency. A gap in the transformer core creates a stray magnetic field outside the transformer. The plurality of transformers are in close proximity to each other so that the stray magnetic field from one transformer is coupled to at least one other transformer. Coupling the stray magnetic fields between transformers results in each resonant circuit resonating at the same frequency.

Abstract: A system and apparatus for controlled fusion in a field reversed configuration (FRC) magnetic topology and conversion of fusion product energies directly to electric power. Preferably, plasma ions are magnetically confined in the FRC while plasma electrons are electrostatically confined in a deep energy well, created by tuning an externally applied magnetic field. In this configuration, ions and electrons may have adequate density and temperature so that upon collisions they are fused together by the nuclear force, thus forming fusion products that emerge in the form of an annular beam. Energy is removed from the fusion product ions as they spiral past electrodes of an inverse cyclotron converter. Advantageously, the fusion fuel plasmas that can be used with the present confinement and energy conversion system include advanced (aneutronic) fuels.

Abstract: The invention concerns a device for producing and/or confining a plasma (10), comprising a recipient (13) within the volume of which the plasma is produced or confined, wherein said recipient comprises a wall (1) defining a lining (15) at the inside of the recipient and encompassing the volume, characterized in that it comprises at least one annular magnet (30), centered around a normal (14) with respect to the lining, having radial magnetization direction, such that the magnetization direction is significantly perpendicular to said normal to the lining. The invention also concerns a method for producing and/or confining a plasma.

Abstract: The impedance of a variable load is matched to the output resistance of an HF generator by performing a first impedance matching for a first load impedance and by performing a second impedance matching for a second load impedance. The first impedance matching is carried out at a first frequency and the second impedance matching is carried out at a second frequency.

Abstract: An apparatus is described for generating excited and/or ionized particles in a plasma with a generator for generating an electromagnetic wave and an excitation chamber with a plasma zone in which the excited and/or ionized particles are formed. At least one excitation chamber is arranged in an insulating material off-center relative to a ring-cylindrical outer conductor.

Abstract: A strongly-ionized plasma generator includes a chamber for confining a feed gas. An anode is positioned inside the chamber. A cathode assembly is positioned adjacent to the anode inside the chamber. An output of a pulsed power supply is electrically connected between the anode and the cathode assembly. The pulsed power supply comprising solid state switches that are controlled by micropulses generated by drivers. At least one of a pulse width and a duty cycle of the micropulses is varied so that the power supply generates a multi-step voltage waveform at the output having a low-power stage including a peak voltage and a rise time that is sufficient to generate a plasma from the feed gas and a transient stage including a peak voltage and a rise time that is sufficient to generate a more strongly-ionized plasma.

Abstract: An apparatus is provided for producing a plasma for a work surface, for example to deposit material thereon. The apparatus comprises an enclosure which contains an ionizable gas, a plurality of plasma excitation devices each of which is arranged to enable microwaves to travel from a first end thereof to a second end and radiate therefrom into the gas, and means for generating a magnetic field in the gas. A source of microwaves feeds microwaves to the first ends of the excitation devices. In use, regions exist within the said gas where the direction of the electric vector of the microwaves is non-parallel to the lines of the magnetic field, and the magnetic field has value B, and the microwaves have a frequency f such as to substantially satisfy the relationship: B=?mf D e where m and e are the mass and charge respectively of an electron.

Abstract: There is provided a plasma processing apparatus which processes a substrate by generating plasma in a process vessel by supply of radio frequency power from a radio frequency power source to at least one of a pair of vertically opposed electrodes disposed in the process vessel, the apparatus including an impedance varying circuit which is connected to at least one of the pair of electrodes and in which an impedance varying part varying impedance on the electrode side of the plasma generated in the process vessel and a resistor are connected in series.

Abstract: When the state of the vacuum processing chamber is switched to an idle state in which an insulating fluid is circulated while a semiconductor wafer W is not placed in the vacuum processing chamber and no plasma is generated in the vacuum processing chamber, nitrogen gas purging (N2 purging) of the inside of the vacuum processing chamber is started, and the pressure in the vacuum processing chamber is controlled to a predetermined level, for example, about 27 Pa (200 mTorr). This makes it possible to prevent a component in the vacuum processing chamber of a plasma processor from being charged to high voltage, so that an insulative material can be protected against breakdown caused by electric discharge or the like.